CN102800449A - Chip thermistor and manufacturing method thereof - Google Patents
Chip thermistor and manufacturing method thereof Download PDFInfo
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- CN102800449A CN102800449A CN2012102610915A CN201210261091A CN102800449A CN 102800449 A CN102800449 A CN 102800449A CN 2012102610915 A CN2012102610915 A CN 2012102610915A CN 201210261091 A CN201210261091 A CN 201210261091A CN 102800449 A CN102800449 A CN 102800449A
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Abstract
The invention relates to the technical field of thermistors, and particularly relates to a chip thermistor and a manufacturing method thereof. The chip thermistor comprises a substrate, wherein the upper end surface of the substrate is provided with a bottom-layer electrode; the upper end surface of the bottom-layer electrode is provided with a thermistor layer; the two sides of the upper end surface of the thermistor layer are respectively provided with an upper-layer electrode; and the middle part of the upper end surface of the thermistor layer is provided with a protective layer which is positioned between the upper-layer electrodes on the two sides of the upper end surface of the thermistor layer. A thick film film forming technology or a thin film film forming technology is adopted to manufacture the chip thermistor, so that the volume of the chip thermistor is decreased, the weight of the thermistor is reduced, and the thermal sensitivity and the resistance tolerance of the thermistor are improved.
Description
Technical field
The present invention relates to the thermistor technical field, particularly a kind of chip type thermal resistor and manufacturing approach thereof.
Background technology
At present; The design of existing multiple chip type thermal resistor; The chip type thermal resistor of tool representative; As shown in Figure 1, it comprises: resistive element 100, the side electrode 101 that is positioned at the both sides, top and bottom, the silver electrode 102 that is positioned at left and right sides internal layer, the nickel electrode 103 that is positioned at the ectonexine centre of the left and right sides, the protective layer 105 that is positioned at the outer field tin electrode 104 in the left and right sides and is used to seal.Above-mentioned chip type thermal resistor manufacturing approach comprises the steps: A, makes resistive element 100, and material is the oxide of transient metal Mn, Co, Cu, Ni, Fe, earlier they is mixed and grind to form the granularity of demand by a certain percentage; Add organic solvent and organic fiber again, fully stir, form starchiness; Through casting technique, it is tens microns diaphragms to the hundreds of micron that this starchy thermo-sensitive material curtain coating is formed thickness, passes through lamination, compressing tablet, drying again, operations such as sintering, and repeat number is inferior; Then, through cutting action, cut out the resistive element of respective resistance values and size, again through variously wear out, step such as sensitization makes final resistive element.B: at the upper and lower surface of the resistive element of sinter molding, printing sintering side electrode 101.C: except that and arranged on left and right sides and position the electrode position of top and bottom, be coated with and seal up protective layer 105 on the surface of resistive element 100.C: be coated with in the and arranged on left and right sides of resistive element 100 and enclose silver electrode 102; The top and bottom electrode is connected conducting.D:, form termination nickel electrode 103 and tin electrode 104 in silver electrode with plating mode.
There is following problem at above-mentioned chip type thermal resistor processing procedure:
1. manufacture process is complicated, and the time is more tediously long.
Above-mentioned thermistor resistances body layer is made up of one deck transition metal oxide, be coated with silvery at two ends and make electrode through the plating generation, but its resistive element material is complicated; Difficulty is high, and nearly twenties of essential production stages cause processing procedure to shorten; Add operations such as cutting, aging, sensitization; Complicated operation, consuming time a lot of, difficult control.
2. manufacturing cost is higher
Because above-mentioned processing procedure comprises a plurality of flow processs, material therefor and cost of labor are all more, yield poorly, cause manufacturing cost higher.
Big, the Heavy Weight of volume, physical strength is relatively poor, sensitive characteristic is relatively poor.
Above-mentioned thermistor is used casting technique production, and its product thickness is 2 to 3 times of thick film silk-screen printing technique product normally.Because the thermistor of casting technique production is a resistor type, the physical strength of resistor depends on the intensity of resistive element, so the ability of the anti-physical impact of thermistor that casting technique is produced is relatively poor.Because the resistor volume that casting technique is produced is big, also causes it long at thermal response time, dissipation factor is big, shortcomings such as self-healing difference.
Summary of the invention
The objective of the invention is to solve the deficiency of prior art, provide that a kind of volume is little, resistance accuracy is high, the simple slice heat sensitive resistor of technology and manufacturing approach thereof.
For achieving the above object, the technical scheme that the present invention adopts is:
A kind of chip type thermal resistor; Comprise substrate; The upper surface of substrate is provided with bottom electrode, and the upper surface of bottom electrode is provided with thermal resistor layer, and the both sides of the upper surface of thermal resistor layer are respectively equipped with upper electrode; The middle part of the upper surface of said thermal resistor layer is provided with protective layer, and protective layer is positioned at the centre of the upper electrode of both sides.
Wherein, substrate adopts insulating material to make, and like pottery, forms the insulating ceramics substrate; The material of bottom electrode can be a kind of in gold, palladium, platinum, the silver or several kinds alloy wherein, also can be a kind of metal or its alloy in nickel, the chromium.
The material of thermistor layer material can be one or more the alloy in manganese, cobalt, nickel, copper, iron, the silver.
The material of upper electrode can be one or more the alloy in gold, palladium, platinum, the silver.
The material of protective layer can be a resin system, like epoxy resin or phenolic aldehyde tree; Or the compound system of silicon, like silicon nitride.
A kind of manufacturing approach of chip type thermal resistor may further comprise the steps:
Step 1: horizontal paddle-tumble and vertical paddle-tumble are set on substrate, and laterally paddle-tumble and vertical paddle-tumble are separated into substrate the substrate monomer of the identical size of shape;
Step 2: utilization thick film film technique or forming thin film technology form bottom electrode on substrate;
Step 3: utilization forming thin film technology on bottom electrode, forms thermal resistor layer; Use thin film deposition processes,, be deposited on the bottom electrode, form the thermal resistor layer semi-finished product a kind of in manganese, cobalt, nickel, copper, iron, the silver or several kinds alloy wherein; Again these semi-finished product are put into 300 to 500 ℃ heat treatment box and heat-treat, have the thermal resistor layer of resistance function with formation;
Step 4: use thin film deposition processes,, be deposited on respectively on the both sides of thermal resistor layer upper surface a kind of in gold, palladium, platinum, the silver or several kinds alloy wherein, and the formation upper electrode;
Step 5: utilization thick film film technique or forming thin film technology, in the middle of the upper surface of thermal resistor layer, form protective layer, and protective layer is between the upper electrode of both sides; Wherein the material of protective layer is a resin system, like epoxy resin or phenolic aldehyde tree; Or the compound system of silicon, like silicon nitride.
Step 6:, the product of step 5 is divided into a plurality of chip type thermal resistor monomers along on-chip horizontal paddle-tumble and vertical paddle-tumble.
Wherein, step 6 back also has:
Step 7: the chip type thermal resistor monomer is carried out performance test, sorting, packing, warehouse-in.
Wherein, when step 2 adopts the thick film film technique, use the mode of silk screen printing, with a kind of in gold, palladium, platinum, the silver or wherein several kinds the conductor paste of alloy be printed on the substrate formation bottom electrode semi-finished product; Again these semi-finished product are put into 850 ℃ of high temperature furnaces and toast, have the bottom electrode of conductor function rete with formation;
Wherein, When step 2 adopts the forming thin film technology, use thin film deposition processes, with a kind of in gold, palladium, platinum, the silver or several kinds alloy wherein; Or, be deposited on and form bottom electrode on the substrate with conductor function rete with a kind of or its alloy in nickel, the chromium.
After carry out step 2; Also need carry out step 2.1; Bottom electrode graphical; Adopt any in the photo etched mask wet process (form one deck light-sensitive surface at the bottom electrode layer and carry out lithographic patterning, utilize the wet process redundance that electrode pattern is outer to remove), printing mask sputtering method, mechanical mask sputtering method of semiconductor technology that bottom electrode is carried out graphically, the present invention does not limit this.
Wherein, thin film deposition processes comprises: hot vapor deposition, sputter, chemical vapour deposition (CVD), plasma enhanced chemical vapor deposition method.
Wherein, when step 5 was used the thick film film technique, protective layer adopted the resin system material, used the mode of silk screen printing, and the slurry of resin system is printed between the upper electrode of thermal resistor layer both sides, formed the protective layer semi-finished product; Again these semi-finished product are put into 200 ℃ of low-temperature setting stoves or solidified case, carry out low-temperature setting, have the protective layer of defencive function with formation.
Wherein, when step 5 was used the forming thin film technology, the material of protective layer was the compound of silicon, used thin film deposition processes, the compound of silicon is deposited on forms the protective layer with defencive function on the substrate.
Wherein, substrate adopts the insulating ceramics substrate.
Beneficial effect of the present invention is: the present invention is simple in structure, and electrode layer is less relatively, effectively reduces volume and weight, and cost is low; The present invention through upper electrode and board pads welding, is equivalent to thermal resistor layer and directly is connected with circuit board in use, improves the thermal response speed of thermistor.Secondly, manufacturing approach craft of the present invention is simple, improves sensitive characteristic, the resistance accuracy of thermistor.
Description of drawings
Fig. 1 is the sketch map of prior art.
Fig. 2 is the sketch map of product of the present invention.
Fig. 3 is the sketch map of production process steps 1 of the present invention.
Reference numeral is:
100---resistive element 101---side electrode
102---silver electrode 103---nickel electrode
104---tin electrode 105---protective layer
200---substrate 201---bottom electrode
202---thermal resistor layer 203---upper electrode
204---protective layers 11---are paddle-tumble laterally
12---vertical paddle-tumble.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done explanation further.
Embodiment 1: referring to accompanying drawing 2; A kind of chip type thermal resistor; Comprise substrate 200; The upper surface of substrate 200 is provided with bottom electrode 201, and the upper surface of bottom electrode 201 is provided with thermal resistor layer 202, and the both sides of the upper surface of thermal resistor layer 202 are respectively equipped with upper electrode 203; The middle part of the upper surface of said thermal resistor layer 202 is provided with protective layer 204, and protective layer 204 is positioned at the centre of the upper electrode 203 of both sides.
Wherein, substrate 200 adopts insulating material to make, and like pottery, forms insulating ceramics substrate 200; The material of bottom electrode 201 can be a kind of in gold, palladium, platinum, the silver or several kinds alloy wherein, also can be a kind of metal or its alloy in nickel, the chromium.
The material of thermal resistor layer 202 materials can be one or more the alloy in manganese (Mn), cobalt (Co), nickel (Ni) copper (Cu), iron (Fe), the silver (Ag).
The material of upper electrode 203 can be one or more the alloy in gold, palladium, platinum, the silver.
The material of protective layer 204 can be lead-boron-silex glass system, like lead glass, Pyrex, borosilicate lead glass, can be resin system, like epoxy resin or phenolic resins, also can be the compound of silicon, like silicon dioxide, silicon nitride; And other megohmite insulants.
Embodiment 2: a kind of manufacturing approach of chip type thermal resistor may further comprise the steps:
Step 1: as shown in Figure 3, horizontal paddle-tumble 11 and vertical paddle-tumble 12 are set on substrate 200, laterally paddle-tumble 11 and vertical paddle-tumble 12 are separated into substrate 200 the substrate monomer of the identical size of shape;
Step 2: utilization thick film film technique forms bottom electrode 201 on substrate 200; Concrete operations are: wherein, use the mode of silk screen printing, one or more the conductor paste of alloy in gold, palladium, platinum, the silver is printed on the substrate 200 formation bottom electrode 201 semi-finished product; Again these semi-finished product are put into 850 ℃ of high temperature furnaces and toast, have the bottom electrode 201 of conductor function rete with formation;
Step 3: utilization forming thin film technology on bottom electrode 201, forms thermal resistor layer 202; Use thin film deposition processes, one or more the alloy with in manganese, cobalt, nickel, copper, iron, the silver is deposited on the bottom electrode 201, forms thermal resistor layer 202 semi-finished product; Again these semi-finished product are put into 300 to 500 ℃ heat treatment box and heat-treat, to form the thermal resistor layer with resistance function 202 of stable performance; Wherein the temperature of heat treatment box is preferable selection at 350 ℃ to 450 ℃, preferably at 400 ℃;
Step 4: utilization forming thin film technology, use thin film deposition processes, one or more the alloy with in gold, palladium, platinum, the silver is deposited on respectively on the both sides of thermal resistor layer 202, and formation upper electrode 203.
Step 5: utilization thick film film technique forms protective layer 204 in the middle of the upper surface of thermal resistor layer 202, and protective layer 204 is between the upper electrode 203 of both sides; Wherein the material of protective layer 204 is resin systems, like epoxy resin or phenolic resins; Or the compound system of silicon, like silicon nitride.Concrete operations are: adopt the resin system material, use the mode of silk screen printing, the slurry of resin system is printed on the thermal resistor layer 202, and between the upper electrode 203 of both sides, forms protective layer 204 semi-finished product; Again these semi-finished product are put into 200 ℃ of low-temperature setting stoves (or solidifying case), carry out low-temperature setting, have the protective layer 204 of defencive function with formation.
Step 6: horizontal paddle-tumble 11 on the substrate 200 and vertical paddle-tumble 12 are divided into a plurality of chip type thermal resistor monomers with the product of step 5.
Wherein, step 6 back also has: step 7: the chip type thermal resistor monomer is carried out performance test, sorting, packing, warehouse-in.
After carry out step 2, the area of the bottom electrode 201 of formation is excessive, need bottom electrode 201 is graphical.Also need carry out:
Step 2.1; Bottom electrode 201 graphical; Can adopt the photo etched mask wet process of semiconductor technology (to form one deck light-sensitive surface 201 layers of bottom electrodes and carry out lithographic patterning; Utilize the wet process redundance that electrode pattern is outer to remove), any in the printing mask sputtering method, mechanical mask sputtering method, the present invention does not limit this.
Wherein, thin film deposition processes comprises: hot vapor deposition, sputter, chemical vapour deposition (CVD), plasma enhanced chemical vapor deposition method.
Wherein, substrate 200 adopts the insulating ceramics substrate.
Embodiment 3: a kind of manufacturing approach of chip type thermal resistor, and its step and embodiment 2 differences are:
Adopt the forming thin film technology on substrate 200, to form bottom electrode 201 in step 2; Be specially: use thin film deposition processes,, or, be deposited on and form bottom electrode 201 on the substrate 200 with conductor function rete with a kind of or its alloy in nickel, the chromium with a kind of or its alloy in gold, palladium, platinum, the silver.
Embodiment 4: a kind of manufacturing approach of chip type thermal resistor, and its step and embodiment 2 differences are:
Step 5 utilization forming thin film technology forms protective layer 204 in the middle of the upper surface of thermal resistor layer 202; The material of protective layer 204 is the compound of silicon; Use thin film deposition processes, the compound of silicon is deposited on forms protective layer 204 on the substrate 200 with defencive function.
Embodiment 5: a kind of manufacturing approach of chip type thermal resistor, and its step and embodiment 3 differences are:
Step 5 utilization forming thin film technology forms protective layer 204 in the middle of the upper surface of thermal resistor layer 202; The material of protective layer 204 is the compound of silicon; Use thin film deposition processes, the compound of silicon is deposited on forms protective layer 204 on the substrate 200 with defencive function.
Below only be the application's preferred embodiment, equivalent technical solutions on this basis still falls into the application protection range.
Claims (10)
1. chip type thermal resistor; Comprise substrate; It is characterized in that: the upper surface of substrate is provided with bottom electrode, and the upper surface of bottom electrode is provided with thermal resistor layer, and the both sides of the upper surface of thermal resistor layer are respectively equipped with upper electrode; The middle part of the upper surface of said thermal resistor layer is provided with protective layer, and protective layer is positioned at the centre of the upper electrode of both sides.
2. a kind of chip type thermal resistor according to claim 1 is characterized in that: substrate adopts the insulating ceramics substrate.
3. the manufacturing approach of a chip type thermal resistor according to claim 1 or claim 2, it is characterized in that: it may further comprise the steps:
Step 1: utilization thick film film technique or forming thin film technology form bottom electrode on substrate;
Step 2: utilization forming thin film technology on bottom electrode, forms thermal resistor layer; Use thin film deposition processes,, be deposited on the bottom electrode, form the thermal resistor layer semi-finished product a kind of in manganese, cobalt, nickel, copper, iron, the silver or several kinds alloy wherein; Again these semi-finished product are put into 300 to 500 ℃ heat treatment box and heat-treat, have the thermal resistor layer of resistance function with formation;
Step 3: use thin film deposition processes,, be deposited on respectively on the both sides of thermal resistor layer upper surface a kind of in gold, palladium, platinum, the silver or several kinds alloy wherein, and the formation upper electrode;
Step 4: utilization thick film film technique or forming thin film technology, in the middle of the upper surface of thermal resistor layer, form protective layer, and protective layer is between the upper electrode of both sides; Wherein the material of protective layer is the compound system of resin system or silicon.
4. the manufacturing approach of a kind of chip type thermal resistor according to claim 3 is characterized in that: also have before the step 1:
Step 0: horizontal paddle-tumble and vertical paddle-tumble are set on substrate, and laterally paddle-tumble is separated into shape, big or small identical substrate monomer with vertical paddle-tumble with substrate;
Also have after the step 4:
Step 5:, the product of step 5 is divided into a plurality of chip type thermal resistor monomers along on-chip horizontal paddle-tumble and vertical paddle-tumble.
5. the manufacturing approach of a kind of chip type thermal resistor according to claim 3 is characterized in that: step 5 back also has:
Step 6: the chip type thermal resistor monomer is carried out performance test, sorting, packing, warehouse-in.
6. the manufacturing approach of a kind of chip type thermal resistor according to claim 3; It is characterized in that: when step 1 adopts the thick film film technique; Use the mode of silk screen printing; With a kind of in gold, palladium, platinum, the silver or wherein several kinds the conductor paste of alloy be printed on the substrate, form the bottom electrode semi-finished product; Again these semi-finished product are put into 850 ℃ of high temperature furnaces and toast, have the bottom electrode of conductor function rete with formation.
7. the manufacturing approach of a kind of chip type thermal resistor according to claim 3; It is characterized in that: when step 1 adopts the forming thin film technology; Use thin film deposition processes; With a kind of in gold, palladium, platinum, the silver or several kinds alloy wherein, or, be deposited on and form bottom electrode on the substrate with conductor function rete with a kind of or its alloy in nickel, the chromium.
8. according to the manufacturing approach of claim 6 or 7 described a kind of chip type thermal resistors, it is characterized in that: after carry out step 1, also need carry out:
Step 1.1: adopt any in the photo etched mask wet process, printing mask sputtering method, mechanical mask sputtering method of semiconductor technology that bottom electrode is carried out graphically.
9. the manufacturing approach of a kind of chip type thermal resistor according to claim 3; It is characterized in that: step 4 is used the thick film film technique; Protective layer adopts the resin system material; Use the mode of silk screen printing, the slurry of resin system is printed between the upper electrode of thermal resistor layer both sides, form the protective layer semi-finished product; Again these semi-finished product are put into 200 ℃ of low-temperature setting stoves or solidified case, carry out low-temperature setting, have the protective layer of defencive function with formation.
10. the manufacturing approach of a kind of chip type thermal resistor according to claim 3; It is characterized in that: step 4 is used the forming thin film technology; The material of protective layer is the compound of silicon; Use thin film deposition processes, the compound of silicon is deposited on forms protective layer on the thermal resistor layer with defencive function.
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| CN201210261091.5A CN102800449B (en) | 2012-07-26 | 2012-07-26 | A kind of chip type thermal resistor and manufacture method thereof |
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| CN201210261091.5A CN102800449B (en) | 2012-07-26 | 2012-07-26 | A kind of chip type thermal resistor and manufacture method thereof |
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| CN102800449A true CN102800449A (en) | 2012-11-28 |
| CN102800449B CN102800449B (en) | 2016-07-06 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2016191705A (en) * | 2015-03-30 | 2016-11-10 | 三菱マテリアル株式会社 | Temperature sensor and manufacturing method for the same |
| CN107256746A (en) * | 2017-07-13 | 2017-10-17 | 中国振华集团云科电子有限公司 | The manufacture method and chip type thermal resistor of chip type thermal resistor |
| TWI626665B (en) * | 2017-03-03 | 2018-06-11 | Wafer resistance manufacturing method and resistance device | |
| CN111029065A (en) * | 2019-12-31 | 2020-04-17 | 广东爱晟电子科技有限公司 | High-precision and high-reliability Ir-Cu-Au composite electrode thermosensitive chip |
| CN114041194A (en) * | 2019-07-05 | 2022-02-11 | Tdk电子股份有限公司 | NTC thin film thermistor and method of manufacturing NTC thin film thermistor |
| CN115261676A (en) * | 2022-07-26 | 2022-11-01 | 北京航玻新材料技术有限公司 | Thermistor alloy, thermistor, manufacturing method of thermistor and glass |
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| CN202736615U (en) * | 2012-07-26 | 2013-02-13 | 东莞市东思电子技术有限公司 | Plate type thermistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2016191705A (en) * | 2015-03-30 | 2016-11-10 | 三菱マテリアル株式会社 | Temperature sensor and manufacturing method for the same |
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| CN111029065A (en) * | 2019-12-31 | 2020-04-17 | 广东爱晟电子科技有限公司 | High-precision and high-reliability Ir-Cu-Au composite electrode thermosensitive chip |
| CN115261676A (en) * | 2022-07-26 | 2022-11-01 | 北京航玻新材料技术有限公司 | Thermistor alloy, thermistor, manufacturing method of thermistor and glass |
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