CN102790069A - 一种传感器及其制造方法 - Google Patents
一种传感器及其制造方法 Download PDFInfo
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- CN102790069A CN102790069A CN2012102629733A CN201210262973A CN102790069A CN 102790069 A CN102790069 A CN 102790069A CN 2012102629733 A CN2012102629733 A CN 2012102629733A CN 201210262973 A CN201210262973 A CN 201210262973A CN 102790069 A CN102790069 A CN 102790069A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210262973.3A CN102790069B (zh) | 2012-07-26 | 2012-07-26 | 一种传感器及其制造方法 |
EP12878647.2A EP2879178B1 (en) | 2012-07-26 | 2012-11-26 | Sensor and manufacturing method therefor |
PCT/CN2012/085290 WO2014015598A1 (zh) | 2012-07-26 | 2012-11-26 | 传感器及其制造方法 |
US14/125,830 US9190438B2 (en) | 2012-07-26 | 2012-11-26 | Sensor and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210262973.3A CN102790069B (zh) | 2012-07-26 | 2012-07-26 | 一种传感器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102790069A true CN102790069A (zh) | 2012-11-21 |
CN102790069B CN102790069B (zh) | 2014-09-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210262973.3A Active CN102790069B (zh) | 2012-07-26 | 2012-07-26 | 一种传感器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9190438B2 (zh) |
EP (1) | EP2879178B1 (zh) |
CN (1) | CN102790069B (zh) |
WO (1) | WO2014015598A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014015598A1 (zh) * | 2012-07-26 | 2014-01-30 | 北京京东方光电科技有限公司 | 传感器及其制造方法 |
CN103560135A (zh) * | 2013-11-14 | 2014-02-05 | 北京京东方光电科技有限公司 | 一种x射线传感器的阵列基板及其制造方法 |
CN106876332A (zh) * | 2017-03-21 | 2017-06-20 | 京东方科技集团股份有限公司 | 显示装置、指纹识别单元以及薄膜晶体管及其制造方法 |
CN109585594A (zh) * | 2017-09-29 | 2019-04-05 | 乐金显示有限公司 | 光电检测设备及其制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790068B (zh) * | 2012-07-26 | 2014-10-22 | 北京京东方光电科技有限公司 | 一种传感器的制造方法 |
CN102790064B (zh) * | 2012-07-26 | 2015-04-08 | 北京京东方光电科技有限公司 | 一种传感器及其制造方法 |
TWI574374B (zh) * | 2015-09-09 | 2017-03-11 | 友達光電股份有限公司 | 製作光學感測元件與薄膜電晶體元件的方法 |
KR102631651B1 (ko) * | 2016-10-24 | 2024-01-30 | 엘지디스플레이 주식회사 | 필팩터가 향상된 디지털 엑스레이 검출장치 |
Citations (3)
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---|---|---|---|---|
US5306648A (en) * | 1986-01-24 | 1994-04-26 | Canon Kabushiki Kaisha | Method of making photoelectric conversion device |
CN101567378A (zh) * | 2008-04-23 | 2009-10-28 | 爱普生映像元器件有限公司 | 固体拍摄装置及其制造方法 |
WO2012082276A2 (en) * | 2010-12-15 | 2012-06-21 | Carestream Health, Inc. | High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4302901B2 (ja) * | 2001-02-27 | 2009-07-29 | 三星モバイルディスプレイ株式會社 | 発光体および発光システム |
JP4908947B2 (ja) * | 2005-07-11 | 2012-04-04 | キヤノン株式会社 | 変換装置、放射線検出装置、及び放射線検出システム |
US7615731B2 (en) * | 2006-09-14 | 2009-11-10 | Carestream Health, Inc. | High fill-factor sensor with reduced coupling |
JP2008171871A (ja) * | 2007-01-09 | 2008-07-24 | Hitachi Displays Ltd | 高感度光センサ素子及びそれを用いた光センサ装置 |
JP5286691B2 (ja) * | 2007-05-14 | 2013-09-11 | 三菱電機株式会社 | フォトセンサー |
JP5406473B2 (ja) * | 2007-07-19 | 2014-02-05 | キヤノン株式会社 | 放射線検出装置 |
JP2009212472A (ja) * | 2008-03-06 | 2009-09-17 | Rohm Co Ltd | 窒化物半導体素子 |
CN107425020B (zh) * | 2009-06-17 | 2019-10-18 | 密执安州立大学董事会 | 辐射传感器 |
TWI423673B (zh) * | 2011-03-17 | 2014-01-11 | Innolux Corp | 影像感測畫素及其驅動方法 |
CN102790069B (zh) * | 2012-07-26 | 2014-09-10 | 北京京东方光电科技有限公司 | 一种传感器及其制造方法 |
-
2012
- 2012-07-26 CN CN201210262973.3A patent/CN102790069B/zh active Active
- 2012-11-26 US US14/125,830 patent/US9190438B2/en active Active
- 2012-11-26 WO PCT/CN2012/085290 patent/WO2014015598A1/zh active Application Filing
- 2012-11-26 EP EP12878647.2A patent/EP2879178B1/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5306648A (en) * | 1986-01-24 | 1994-04-26 | Canon Kabushiki Kaisha | Method of making photoelectric conversion device |
CN101567378A (zh) * | 2008-04-23 | 2009-10-28 | 爱普生映像元器件有限公司 | 固体拍摄装置及其制造方法 |
WO2012082276A2 (en) * | 2010-12-15 | 2012-06-21 | Carestream Health, Inc. | High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014015598A1 (zh) * | 2012-07-26 | 2014-01-30 | 北京京东方光电科技有限公司 | 传感器及其制造方法 |
US9190438B2 (en) | 2012-07-26 | 2015-11-17 | Beijing Boe Optoelectronics Technology Co., Ltd. | Sensor and method for fabricating the same |
CN103560135A (zh) * | 2013-11-14 | 2014-02-05 | 北京京东方光电科技有限公司 | 一种x射线传感器的阵列基板及其制造方法 |
CN103560135B (zh) * | 2013-11-14 | 2015-12-02 | 北京京东方光电科技有限公司 | 一种x射线传感器的阵列基板及其制造方法 |
CN106876332A (zh) * | 2017-03-21 | 2017-06-20 | 京东方科技集团股份有限公司 | 显示装置、指纹识别单元以及薄膜晶体管及其制造方法 |
US10720512B2 (en) | 2017-03-21 | 2020-07-21 | Boe Technology Group Co., Ltd. | Product method of thin-film transistor, thin-film transistor, display apparatus, and fingerprint recognition unit |
CN109585594A (zh) * | 2017-09-29 | 2019-04-05 | 乐金显示有限公司 | 光电检测设备及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2879178A4 (en) | 2016-03-30 |
CN102790069B (zh) | 2014-09-10 |
EP2879178A1 (en) | 2015-06-03 |
WO2014015598A1 (zh) | 2014-01-30 |
US9190438B2 (en) | 2015-11-17 |
US20150014751A1 (en) | 2015-01-15 |
EP2879178B1 (en) | 2017-08-09 |
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Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141208 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141208 |
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Effective date of registration: 20141208 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing city in Western Daxing District economic and Technological Development Zone, Road No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |