CN102789017A - Method for manufacturing multistage micro-mirror through inversely adjusting thick film - Google Patents
Method for manufacturing multistage micro-mirror through inversely adjusting thick film Download PDFInfo
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- CN102789017A CN102789017A CN2012102557330A CN201210255733A CN102789017A CN 102789017 A CN102789017 A CN 102789017A CN 2012102557330 A CN2012102557330 A CN 2012102557330A CN 201210255733 A CN201210255733 A CN 201210255733A CN 102789017 A CN102789017 A CN 102789017A
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Abstract
The invention relates to a method for manufacturing a multistage micro-mirror through inversely adjusting a thick film. The method comprises the following steps of manufacturing 2N original substrates and washing the substrates; photoetching a needed mask pattern on the original substrates, depositing a film material, and stripping photoresist to form a film layer structure; photoetching a masked pattern on a base, and depositing a film layer which has a thickness less than h; respectively locating the first N inverse band structure substrates on a specific position of the base, and fixing the substrates together to form a multistage micro-mirror; and depositing a reflectance-increasing film layer on the upper surface of the multistage micro-mirror. By the method provided by the invention, control precision of a step surface roughness is effectively improved, and a step vertical height is monitored in real time, so that the precision of a transverse size is high, and the process controllability is strong.
Description
Technical field
The present invention relates to a kind of method for making of light reflection device, the method that multilevel micro-reflector is made in particularly a kind of thick film upside-down mounting adjustment.
Background technology
Along with optical system is little to volume, the compact conformation direction develops, the device miniature in the optical system changes into an important subject into optical device designs and making.And the level of minitype optical device design and fabrication directly determines the performance of optical instrument.Multilevel micro-reflector with a plurality of steps is a kind of reflection of light device, and application is more and more widely arranged in optical system, as: spectral analysis, beam shaping and optical fiber coupling etc.
At present, can be through binary optical technique through repeatedly photoetching and repeatedly (dry method or wet method) corrosion on multiple material substrate such as quartz, the structure of preparation multi-ladder micro-reflector.But there is following shortcoming in the method for making of this multilevel micro-reflector of the prior art: 1, because of alignment repeatedly, horizontal accuracy is difficult to guarantee; 2, corrosion or etching depth are difficult to accurate control, and precision is relatively poor with repeatability; 3, stepped vertical spacing range of adjustment is little; 4, corrode or the mirror surface roughness that etches is difficult to satisfy the optical instrument requirement.
Summary of the invention
The present invention will solve that the existing precision of the multilevel micro-reflector of making in the prior art is low, little, the rough surface of stepped vertical spacing range of adjustment; Be difficult to satisfy the technical matters of optical instrument requirement; Provide a kind of ladder height, surfaceness, horizontal accuracy, face shape etc. accurately to control, the method that multilevel micro-reflector is made in thick film upside-down mounting adjustment.
In order to solve the problems of the technologies described above, the method for making of multilevel micro-reflector of the present invention is specific as follows:
The method that multilevel micro-reflector is made in a kind of thick film upside-down mounting adjustment may further comprise the steps:
Step 1: utilize the method for depositional coating on a plurality of substrates, to form the rete step with same tag pattern, the height equal difference of adjacent on-chip said rete step increases progressively;
Step 2: utilize the method for depositional coating in substrate, to form a plurality of strip film layer structures that are set up in parallel; This strip film layer structure and on-chip indicia patterns are complementary, and said on-chip rete step can be plugged on any strip film layer structure;
Step 3: according to rete step order from low to high, with arranged side by side being plugged in the said substrate of said substrate; The one side relative with the rete step of a plurality of said substrates forms ledge structure;
Step 4: at the surface deposition reflection enhancing coating and the diaphragm of ledge structure.
In technique scheme, in the said step 3, after being plugged on said substrate in the said substrate, also be included in the step that hardening agent is filled in high-precision adjustment and space between said substrate and the said substrate.
In technique scheme, before step 1, comprise also substrate carried out processed steps that be specially: the left surface and the right flank of substrate are ground and polish, all make its surfaceness reach 0.1nm～1 μ m, left surface is parallel to right flank.
In technique scheme, in the said step 1, when on a plurality of substrates, forming the rete step, the substrate of the rete step of same height is made two simultaneously, so that guarantee that operator's console is steady during adjustment.
In technique scheme, when forming rete step or strip film layer structure, film that is adopted or thick-film material are: silicon, silicon dioxide, aluminium, gold, copper, silicon nitride, molybdenum, titanium or nickel.The film thickness of above-mentioned indication is less than 1 μ m, and thick film thickness is more than or equal to 1 μ m.
In technique scheme, when forming rete step or strip film layer structure, film or thick-film material adopt any one in magnetron sputtering, radio-frequency sputtering, ion beam sputtering, d.c. sputtering, electron beam evaporation, thermal evaporation and the electrocasting method.
In technique scheme, the material of said substrate is: silicon chip, glass, quartz, aluminium flake, titanium sheet or copper sheet.
In technique scheme, the material of said substrate is: glass, silicon, pottery, quartz or aluminium.
In technique scheme, said reflection enhancing coating adopts magnetron sputtering, radio-frequency sputtering, ion beam sputtering, d.c. sputtering, electron beam evaporation or thermal evaporation method deposition.
In technique scheme, said protective film material adopts MgF
2, Al
2O
3Or SiO
2
The method that multilevel micro-reflector is made in thick film upside-down mounting adjustment of the present invention; Because adopt the method for thick film upside-down mounting adjustment to make multilevel micro-reflector, the height of each step can be monitored in real time, guarantees the accurate control of height; And the reflecting surface of each step is to form through same batch of grinding and polishing; Not only surface shape can both be consistent with roughness, and can reach the index request of design, improved control accuracy, the longitudinal size precision of stepped surfaces roughness effectively; Process controllability is strong, and the micro-reflector surfaceness is low, flatness is high.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
Fig. 1 a, 1b are respectively the front view and the vertical view of original substrate.
Fig. 2 a, 2b are respectively the front view and the vertical view of band structure substrate.
Fig. 3 a, 3b, 3c are respectively the front view of substrate and band structure substrate and the vertical view of band structure substrate.
Fig. 4 is a micropositioning stage apparatus structure synoptic diagram.
Fig. 5 is the structural drawing of the multilevel micro-reflector of 3 steps.
Reference numeral among the figure is expressed as:
The upper surface of 11-substrate; The lower surface of 12-substrate; The left surface of 13-substrate; The right flank of 14-substrate; The trailing flank of 15-substrate; The leading flank of 16-substrate;
21-rete step; The 31-substrate; 32-strip film layer structure; The 41-micropositioning stage; The 42-wafer-supporting platform; The 43-microscope; The upper surface of 51-band structure substrate.
Embodiment
The invention thought that the method for multilevel micro-reflector is made in thick film upside-down mounting adjustment of the present invention is:
The method that multilevel micro-reflector is made in a kind of thick film upside-down mounting adjustment may further comprise the steps:
Step 1: utilize the method for depositional coating on a plurality of substrates, to form the rete step with same tag pattern, the height equal difference of adjacent on-chip said rete step increases progressively.Specifically, earlier, make at least one opposite side of rectangle substrate be parallel to each other, and surfaceness reach 0.1nm～1 μ m the processing of cleaning and polish of a plurality of substrates.On a plurality of substrates through cleaning and polishing processing, utilize the method for depositional coating then, form highly different rete steps respectively, adjacent on-chip rete step increases progressively successively, and the height that increases progressively is identical.
Step 2: utilize the method for depositional coating in substrate, to form a plurality of strip film layer structures that are set up in parallel; This strip film layer structure and on-chip indicia patterns are complementary, and said on-chip rete step can be plugged on any strip film layer structure.In this step, a plurality of strip film layer structures that form in the substrate are identical, and side by side in succession.The rete step of each substrate can be plugged on any strip film layer structure.
Step 3: according to the difference of the height of said on-chip rete step, according to order from low to high, with arranged side by side being plugged in the said substrate of said substrate.The one side relative with the rete step of a plurality of said substrates forms ledge structure.In other words, be the lower surface of substrate with the one side that is formed with the rete step, then the upper surface of substrate has formed ledge structure.
Step 4:, form multilevel micro-reflector at the surface deposition reflection enhancing coating and the diaphragm of ledge structure.
Below in conjunction with accompanying drawing the present invention is done to specify.
It is 10 that total number of steps is made in thick film upside-down mounting of the present invention adjustment, and bench height is 2 μ m, and width is that the method concrete steps of multilevel micro-reflector of 30mm are following:
(1), adopt silicon chip, glass, quartz, aluminium flake, titanium sheet or copper sheet as original substrate, and it is carried out clean, the step of its clean is:
1) with toluene, acetone, ethanol ultrasonic cleaning 15 minutes, removes organism such as greasy dirt;
2) use the deionized water ultrasonic cleaning, absolute ethyl alcohol dehydration back oven dry.
(2), with 20 identical original substrate twin polishings, promptly the lower surface 12 to upper surface of substrate 11 and substrate carries out polishing.And then the right flank 14 of left surface of each substrate 13 and substrate ground and polish; All make its surfaceness reach 0.1nm～1 μ m; The left surface 13 of substrate is parallel to the right flank 14 of substrate; And the thickness of each substrate is H, and width is 30mm, shown in Fig. 1 a, 1b (the present invention does not have extra high requirement for the depth of parallelism between the trailing flank 15 of the leading flank 16 of substrate and substrate).Then, each substrate is carried out clean, the step of its clean is:
1) with toluene, acetone, ethanol ultrasonic cleaning 15 minutes, removes organism such as greasy dirt;
2) use the deionized water ultrasonic cleaning, absolute ethyl alcohol dehydration back oven dry.
(3), apply photoresist at first and the 11 original substrate upper surface; With the equidistant reticle exposure of strip light and shade striped; And development, post bake; Form the strip mask pattern, then through magnetron sputtering or methods such as radio-frequency sputtering or ion beam sputtering or d.c. sputtering or electron beam evaporation or thermal evaporation or electroforming with silicon or silicon dioxide or aluminium or gold or copper or silicon nitride or molybdenum or titanium or nickel or other Coating Materials deposition or electroforming in the original substrate surface, remove photoresist with glue-dispenser; Obtain the rete step 21 of strip shown in Fig. 2 a and Fig. 2 b, its thickness is 20 μ m.Repeat above step; Obtain with first other original substrate identical with rete step 21 indicia patterns on the 11 original substrate on the rete step; Wherein the rete step thicknesses of second and the 12 original substrate is 18 μ m; The rete step thicknesses of the 3rd and the 13 original substrate is 16 μ m, and by that analogy, obtain at last the tenth and the rete step thicknesses of the 20 original substrate are 2 μ m.Thereby obtain two groups of 10 band structure substrates, wherein first to the tenth band structure substrate is used to make multilevel micro-reflector in subsequent step, and the 11 to the 20 band structure substrate is used for when subsequent step is adjusted, guaranteeing that operator's console is steady.
(4), the polishing flat board of getting a high flatness is as substrate, shown in Fig. 3 a, the material of substrate 31 can be glass or silicon or pottery or quartz or aluminium or other metals.Apply photoresist in its surface, mask, exposure, development form equidistant tree lace bar, deposit the film material of a layer thickness less than 2 μ m then, and stripping photoresist obtains the strip film layer structure 32 shown in Fig. 3 b.Complementary on this strip film layer structure 32 with the indicia patterns of rete step 21, thus the band structure substrate of making in the step of making (three) can be inserted on the strip film layer structure 32 of substrate 31.
(5), as shown in Figure 4, with substrate 31 face down, fix with the screw tightening of micropositioning stage 41; Again up with first band structure substrate upper surface 11; Place on the wafer-supporting platform 42, about the adjusting wafer-supporting platform (directions X), front and back (Y direction) and angle rotation hand wheel; And the microscope through micropositioning stage 41 tops 43 observes, and substrate is aimed at the indicia patterns of band structure substrate.In order to guarantee that substrate contacts with the band structure substrate deflection does not take place, the 11 band structure substrate is placed on the correct position of pallet.Behind the aligning, wafer-supporting platform 42 is risen along Z-direction, substrate and band structure substrate are compressed after; With the space between hardening agent filling tape structure substrate and substrate, with the method successively with second, the 3rd; The substrate of the tenth band structure is positioned on the ad-hoc location of substrate, and the right flank of each band structure substrate is closely contacted with the left surface of adjacent band structure substrate, and promptly the right flank of first band structure substrate contacts with the left surface face of second band structure substrate; The right flank of second substrate contacts with the left surface face of the 3rd band structure substrate, As shown in Figure 5, the upper surface 51 of 10 band structure substrates after stacking has just formed the multilevel micro-reflector structure.Wherein, Fig. 5 only shows 3 formed 3 steps of band structure substrate.
(6), at multistage ledge structure upper surface deposition reflection enhancing coating and diaphragm.At multistage ledge structure upper surface deposition reflection enhancing coating is through magnetron sputtering, radio-frequency sputtering, ion beam sputtering, d.c. sputtering, electron beam evaporation or thermal evaporation method, is deposited on the upper surface of the ledge structure that step (five) obtains.The material of said reflection enhancing coating adopts golden film or aluminium film or other wave band is had the film material of reflex.On reflection enhancing coating, deposit diaphragm afterwards, to prevent the film material oxidation.The material of said diaphragm adopts MgF
2, Al
2O
3Or SiO
2
So far, having accomplished 10 grades of multilevel micro-reflectors makes.
Among the present invention, when forming rete step or strip film layer structure, the film or the thick-film material that are adopted are meant that thickness is to be the thick film more than or equal to 1 μ m less than the film of 1 μ m or thickness.
In other embodiment, among described step (three) and (four), film or thick-film material can adopt silicon, also can adopt silicon dioxide or aluminium or gold or copper or silicon nitride or molybdenum or titanium or nickel or other depositable material.Membraneous material can also adopt radio-frequency sputtering or methods such as ion beam sputtering or d.c. sputtering or electron beam evaporation or thermal evaporation or electroforming except adopting the method for magnetron sputtering, is deposited on each original substrate upper surface.
Substrate material can also be selected glass, quartz, aluminium flake, titanium sheet or copper sheet or other metals for use except selecting for use the silicon chip.Base material can also be selected silicon or quartz or pottery or aluminium or other metals for use except selecting glass for use.Hardening agent can also adopt ultra-violet curing glue except can adopting infrared curing glue.Same, remove photoresist solution except can adopting sulfuric acid and nitric acid mixed solution, can also adopt acetone and ether mixed solution.
In other the embodiment, the method for concrete depositional coating repeats no more at this.
Obviously, the foregoing description only be for explanation clearly done for example, and be not qualification to embodiment.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation or change.Here need not also can't give exhaustive to all embodiments.And conspicuous variation of being extended out thus or change still are among the protection domain of the invention.
Claims (10)
1. the method that multilevel micro-reflector is made in thick film upside-down mounting adjustment is characterized in that, may further comprise the steps:
Step 1: utilize the method for depositional coating on a plurality of substrates, to form the rete step with same tag pattern, the height equal difference of adjacent on-chip said rete step increases progressively;
Step 2: utilize the method for depositional coating in substrate, to form a plurality of strip film layer structures that are set up in parallel; This strip film layer structure and on-chip indicia patterns are complementary, and said on-chip rete step can be plugged on any strip film layer structure;
Step 3: according to the difference of the height of said on-chip rete step, according to order from low to high, with arranged side by side being plugged in the said substrate of said substrate; The one side relative with the rete step of a plurality of said substrates forms ledge structure;
Step 4: at the surface deposition reflection enhancing coating and the diaphragm of ledge structure.
2. the method for making multilevel micro-reflector according to claim 1; It is characterized in that; In the said step 3, after being plugged on said substrate in the said substrate, also be included in the step that hardening agent is filled in high-precision adjustment and space between said substrate and the said substrate.
3. the method for making multilevel micro-reflector according to claim 1; It is characterized in that; Before step 1, also comprise substrate is carried out processed steps, be specially: the left surface and the right flank of substrate are ground and polish; All make its surfaceness reach 0.1nm～1 μ m, left surface is parallel to right flank.
4. the method for making multilevel micro-reflector according to claim 1 is characterized in that,
In the said step 1, when on a plurality of substrates, forming the rete step, the substrate of the rete step of same height is made two simultaneously, so that guarantee that operator's console is steady during adjustment.
5. according to the method for the arbitrary described making multilevel micro-reflector of claim 1-4, it is characterized in that,
When forming rete step or strip film layer structure, film that is adopted or thick-film material are: silicon, silicon dioxide, aluminium, gold, copper, silicon nitride, molybdenum, titanium or nickel.
6. according to the method for the arbitrary described making multilevel micro-reflector of claim 1-4, it is characterized in that,
When forming rete step or strip film layer structure, film or thick-film material adopt any one in magnetron sputtering, radio-frequency sputtering, ion beam sputtering, d.c. sputtering, electron beam evaporation, thermal evaporation and the electrocasting method.
7. according to the method for the arbitrary described making multilevel micro-reflector of claim 1-4, it is characterized in that the material of said substrate is: silicon chip, glass, quartz, aluminium flake, titanium sheet or copper sheet.
8. according to the method for the arbitrary described making multilevel micro-reflector of claim 1-4, it is characterized in that the material of said substrate is: glass, silicon, pottery, quartz or aluminium.
9. according to the method for the arbitrary described making multilevel micro-reflector of claim 1-4, it is characterized in that said reflection enhancing coating adopts magnetron sputtering, radio-frequency sputtering, ion beam sputtering, d.c. sputtering, electron beam evaporation or thermal evaporation method deposition.
10. according to the method for the arbitrary described making multilevel micro-reflector of claim 1-4, it is characterized in that said protective film material adopts MgF
2, Al
2O
3Or SiO
2
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114182226A (en) * | 2021-10-22 | 2022-03-15 | 南京理工大学 | Medium reflector type control method of ion source auxiliary coating based on precompensation |
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| JP2002169011A (en) * | 2000-12-05 | 2002-06-14 | Minolta Co Ltd | Diffraction optical element and method for manufacturing surface form of diffraction grating |
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| CN114182226A (en) * | 2021-10-22 | 2022-03-15 | 南京理工大学 | Medium reflector type control method of ion source auxiliary coating based on precompensation |
| CN114182226B (en) * | 2021-10-22 | 2023-11-21 | 南京理工大学 | Medium reflector surface control method based on precompensation ion source auxiliary coating |
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