CN101290363A - Method for controlling growing multiple layer film for making multiple-level micro-reflector - Google Patents
Method for controlling growing multiple layer film for making multiple-level micro-reflector Download PDFInfo
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- CN101290363A CN101290363A CNA2008100507896A CN200810050789A CN101290363A CN 101290363 A CN101290363 A CN 101290363A CN A2008100507896 A CNA2008100507896 A CN A2008100507896A CN 200810050789 A CN200810050789 A CN 200810050789A CN 101290363 A CN101290363 A CN 101290363A
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Abstract
The invention relates to a method for producing a multi-stage microreflecting mirror by controlling the growth of a multi-layer film, which comprises the following steps that: a substrate is produced and is treated with cleaning; a first photomask is used to photoetch for forming a needed masking pattern, the width of a bright fringe and the width of a dark fringe of the first photomask are respectively L/2<1>; then coating material is deposited, photoresist and a film on the photoresist are peeled off, and a multi-stage film staircase is formed; each film layer staircase is orderly produced according to the method, the width of a bright fringe and the width of a dark fringe of the nth photomask are respectively L/2<n>, until the needed staircases are reached to finish the production of the substrate of a multi-stage microreflecting mirror; the produced substrate of the multi-stage microreflecting mirror is used as a template production mould, then a die casting method is used to produce a multi-stage staircase structure; and the surface of the multi-stage staircase structure or the substrate of the multi-stage microreflecting mirror is coated with a reflection increasing film. The method effective improves the longitudinal dimension accuracy and the repetitiveness of the staircase, has strong process controllability and good repetitiveness, does not use chemical etching, and reduces the pollution.
Description
Technical field
The present invention relates to a kind of method for making of multilevel micro-reflector, particularly a kind ofly control the method for making that growing multiple layer film for making is used for as seen reaching the multilevel micro-reflector of infrared band.
Background technology
Multilevel micro-reflector is as a kind of reflection of light device, and is in an increasingly wide range of applications in optical system, as: spectrum analysis, beam shaping and coupling fiber etc.
Along with optical system is little to volume, the compact conformation future development, the device in the optical system is miniaturizated to an important subject of optics, and minitype optical device design and fabrication level directly determines the performance of this light instrument.Multilevel micro-reflector can carry out repeatedly photoetching and repeatedly corrode (dry method or wet method) in the multiple materials such as quartz preparation ladder micro-structural at substrate by binary optical technique, there is following shortcoming in this method: 1, because of alignment repeatedly, horizontal accuracy is difficult to guarantee; 2, need to carry out the corrosion of repeatedly photoetching and multiple chemical, cause chemical contamination; 3, corrosion or etching depth are difficult to accurate control, and precision and repeatability are relatively poor.
Summary of the invention
It is strong that the technical problem to be solved in the present invention provides a kind of process controllability, good reproducibility, and the horizontal accuracy height, multistage ladder longitudinal size precision height, and, reduced the method for the control growing multiple layer film for making multiple-level micro-reflector that pollutes without chemical corrosion.
The method of control growing multiple layer film for making multiple-level micro-reflector of the present invention comprises the following steps:
(1), adopt the surfaceness of twin polishing be the silicon of 0.2nm～1 μ m or glass or silicon dioxide or silit or molybdenum sheet or piezoid as substrate, and it is carried out cleaning treatment;
(2), at substrate upper surface coating photoresist, with first reticle exposure and development, post bake, form required masking graphics; If step adds up to N, the multilevel micro-reflector overall width is L, and the height of every layer of step is h, and then the width of the bright fringe of first reticle and dark fringe respectively is L/2
1Then Coating Materials is deposited or electroformed in substrate upper surface, stripping photoresist and film deposited thereon form the rete step, and thicknesses of layers is Nh/2
1, width is L/2
1, cleaning treatment;
(3), at the sample upper surface of step (two) made coating photoresist, carry out the photoetching second time with second reticle then, form required masking graphics; The width of second reticle bright fringe and dark fringe respectively is L/2
2Then Coating Materials is deposited or electroformed in the sample upper surface, stripping photoresist and film deposited thereon form second batch rete step, and thicknesses of layers is Nh/2
2, width is L/2
2, cleaning treatment;
(4), carry out for the third time photoetching with the 3rd reticle, form required masking graphics; The width of the 3rd reticle bright fringe and dark fringe respectively is L/2
3Then Coating Materials is deposited or electroformed in the sample upper surface, stripping photoresist and film deposited thereon form the 3rd batch of rete step, and thicknesses of layers is Nh/2
3, width is L/2
3, cleaning treatment;
(5), as stated above make successively each rete step, until reach required progression, the width of n piece reticle bright fringe and dark fringe respectively is L/2
nThe n time deposition or the thicknesses of layers that obtains of electroforming are Nh/2
n, width is L/2
nEach shoulder height of multilevel micro-reflector substrate that completes at last is Nh/2
n, width is L/2
n, the vertical height between first tunic and last tunic is Nh, and multi-stage stairs adds up to N, and overall width is L;
(6), with the multilevel micro-reflector substrate that completes as the template construct mould, make multistage staircase structure with die casting method then.
(7) at the anti-rete of upper surface plating increasing of made multistage staircase structure or the multilevel micro-reflector substrate that completes.
The present invention is owing to adopt control growing multiple layer film method to make multilevel micro-reflector, the thickness of every tunic can accurately be controlled when deposition, so in manufacturing process, can accurately control the height between each minute surface of multilevel micro-reflector, ladder longitudinal size precision and repeatability have effectively been improved, process controllability is strong, good reproducibility, and horizontal accuracy height.Cost is low, without chemical corrosion, has reduced pollution, and multistage step wedge filter layer material can be selected multiple material for use, and each ladder rete can be a commaterial.The micro-reflector surface roughness is low, the flatness height.
Described Coating Materials is deposited on the substrate by magnetron sputtering or radio-frequency sputtering or ion beam sputtering or d.c. sputtering or electron beam evaporation or thermal evaporation or electrocasting method.
Described Coating Materials is silicon or silicon dioxide or aluminium or gold or copper or silit or molybdenum or titanium or nickel.
Making mould in the described step (six) adopts electrocasting method to make metal die or make mould with silicon rubber.
The middle plating of described step (seven) increases anti-rete and adopts with magnetron sputtering or radio-frequency sputtering or ion beam sputtering or d.c. sputtering or electron beam evaporation or thermal evaporation method.
Described increasing on the anti-rete deposits protective film, to prevent the film material oxidation.
Described protective film material is MgF
2Or Al
2O
3Or SiO
2
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 (a) and (b), (c), (d) are the method process charts of control growing multiple layer film for making multiple-level micro-reflector of the present invention.1 is substrate among the figure, 2 reticle, 3 rete steps.
Embodiment
Below describe the method for control growing multiple layer film for making multiple-level micro-reflector of the present invention in detail.This method adopts control growing multiple layer film method to make multilevel micro-reflector, and step adds up to 16, and the multilevel micro-reflector overall width is 8mm, and concrete technological process is as follows:
(1), adopt the surfaceness of twin polishing be the silicon of 0.2nm～1 μ m or glass or silicon dioxide or silit or molybdenum sheet or piezoid as substrate, and it is carried out cleaning;
(2), at substrate upper surface coating photoresist, with first reticle exposure and development, post bake, form required masking graphics; The bright fringe of first reticle and the width of dark fringe respectively are L/2
1By methods such as magnetron sputtering or radio-frequency sputtering or ion beam sputtering or d.c. sputtering or electron beam evaporation or thermal evaporation or electroforming silicon or silica or aluminium or gold or copper or carborundum or molybdenum or titanium or nickel or other Coating Materials are deposited or electroformed in substrate surface then, with glue-dispenser stripping photoresist and film deposited thereon, form the rete step, shown in Fig. 1 (a), thicknesses of layers is 400nm, width is 4mm, cleans.
(3), apply equally photoresist at the upper surface of the sample of step 2 made, carry out the photoetching second time with second reticle then, form required masking graphics; The width of second reticle bright fringe and dark fringe respectively is L/2
2To or be electroformed in substrate surface with the identical or different deposition of material of step 2 by the technology identical with step 2 then, with glue-dispenser stripping photoresist and film deposited thereon, form second batch rete step, shown in Fig. 1 (b), thicknesses of layers is 200nm, and width is 2mm, cleans.
(4), apply equally photoresist at the upper surface of the sample of step 3 made, carry out for the third time photoetching with the 3rd reticle, form required masking graphics; The width of the 3rd reticle bright fringe and dark fringe respectively is L/2
3Then by being deposited or electroformed in substrate surface with step 2, three identical or different materials with step 2, three identical technologies, with glue-dispenser stripping photoresist and film deposited thereon, form the 3rd batch of rete step, shown in Fig. 1 (c), thicknesses of layers is 100nm, width is 1mm, cleans.
(5), apply equally photoresist at the upper surface of the sample of step 4 made, carry out four mask with the 4th reticle, form required masking graphics; The width of the 4th reticle bright fringe and dark fringe respectively is L/2
4By methods such as magnetron sputtering or radio-frequency sputtering or ion beam sputtering or d.c. sputtering or electron beam evaporation or thermal evaporation or plated metals silicon, silica, carborundum, molybdenum, titanium, nickel or other Coating Materials are deposited or are plated on substrate surface then, form another batch rete step, shown in Fig. 1 (d), thicknesses of layers is 50nm, width is 0.5mm, removes photoresist, cleans.Each small stair height of the multilevel micro-reflector substrate of Zhi Zuoing at last is 50nm, and width is 0.5mm, and the vertical height between first tunic and last tunic is 800nm, and step adds up to 16, and the mirror overall width is 8mm.
(6), the multilevel micro-reflector substrate of above-mentioned making is made metal die or made mould with silicon rubber etc. with electrocasting method as template, make hierarchic structure with die casting method then, multistage hierarchic structure material can be selected aluminium or the metals such as gold or copper or titanium or nickel.
(7), deposit a floor height reflective film with evaporation coating methods such as magnetron sputtering or radio-frequency sputtering or ion beam sputtering or d.c. sputtering or electron beam evaporation or thermal evaporations, the staircase structure plated film will utilize boundary-layer theory to design the anti-rete of increasing of multilevel micro-reflector at the upper surface of made multistage staircase structure or the multilevel micro-reflector substrate that completes.Deposit protective film increasing anti-rete, to prevent the film material oxidation, the protective film material is generally used MgF
2Or Al
2O
3Or SiO
2So far, finishing multilevel micro-reflector makes.
Claims (5)
1, a kind of method of controlling growing multiple layer film for making multiple-level micro-reflector is characterized in that comprising the following steps:
(1), adopt the surfaceness of twin polishing be the silicon of 0.2nm～1 μ m or glass or silicon dioxide or silit or molybdenum sheet or piezoid as substrate, and it is carried out cleaning treatment;
(2), at substrate upper surface coating photoresist, with first reticle exposure and development, post bake, form required masking graphics; If step adds up to N, the multilevel micro-reflector overall width is L, and the height of every layer of step is h, and then the width of the bright fringe of first reticle and dark fringe respectively is L/2
1Then Coating Materials is deposited or electroformed in substrate upper surface, stripping photoresist and film deposited thereon form the rete step, and thicknesses of layers is Nh/2
1, width is L/2
1, cleaning treatment;
(3), at the sample upper surface of step (two) made coating photoresist, carry out the photoetching second time with second reticle then, form required masking graphics; The width of second reticle bright fringe and dark fringe respectively is L/2
2Then Coating Materials is deposited or electroformed in the sample upper surface, stripping photoresist and film deposited thereon form second batch rete step, and thicknesses of layers is Nh/2
2, width is L/2
2, cleaning treatment;
(4), carry out for the third time photoetching with the 3rd reticle, form required masking graphics; The width of the 3rd reticle bright fringe and dark fringe respectively is L/2
3Then Coating Materials is deposited or electroformed in the sample upper surface, stripping photoresist and film deposited thereon form the 3rd batch of rete step, and thicknesses of layers is Nh/2
3, width is L/2
3, cleaning treatment;
(5), as stated above make successively each rete step, until reach required progression, the width of n piece reticle bright fringe and dark fringe respectively is L/2
nThe n time deposition or the thicknesses of layers that obtains of electroforming are Nh/2
n, width is L/2
nEach shoulder height of multilevel micro-reflector substrate that completes at last is Nh/2
n, width is L/2
n, the vertical height between first tunic and last tunic is Nh, and multi-stage stairs adds up to N, and overall width is L;
(6), with the multilevel micro-reflector substrate that completes as the template construct mould, make multistage staircase structure with die casting method then.
(7) at the anti-rete of the surface of made multistage staircase structure or the multilevel micro-reflector substrate that completes plating increasing.
2, the method for control growing multiple layer film for making multiple-level micro-reflector according to claim 1 is characterized in that Coating Materials is silicon or silica or aluminium or gold or copper or carborundum or molybdenum or titanium or nickel in the described step (two).
3, the method for control growing multiple layer film for making multiple-level micro-reflector according to claim 1 is characterized in that making in the described step (six) mould and adopts electrocasting method to make metal die or make mould with silicon rubber.
4, the method for control growing multiple layer film for making multiple-level micro-reflector according to claim 1 is characterized in that described increasing on the anti-rete deposits protective film.
5, the method for control growing multiple layer film for making multiple-level micro-reflector according to claim 4 is characterized in that described protective film material is MgF
2Or Al
2O
3Or SiO
2
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| CN2008100507896A CN101290363B (en) | 2008-06-04 | 2008-06-04 | Method for controlling growing multiple layer film for making multiple-level micro-reflector |
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|---|---|---|---|
| CN2008100507896A CN101290363B (en) | 2008-06-04 | 2008-06-04 | Method for controlling growing multiple layer film for making multiple-level micro-reflector |
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| CN101290363B CN101290363B (en) | 2010-10-27 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102289011A (en) * | 2011-07-08 | 2011-12-21 | 中国矿业大学(北京) | Method for making rough solid test piece surface into reflecting mirror surface |
| CN102789017A (en) * | 2012-07-23 | 2012-11-21 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing multistage micro-mirror through inversely adjusting thick film |
| CN102789016A (en) * | 2012-07-23 | 2012-11-21 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing multi-level miniature reflecting mirror in mixed way by adjusting, positioning and growing multiple layers of films through thick film inversion |
| CN103132039A (en) * | 2013-02-28 | 2013-06-05 | 广东省计量科学研究院 | Metal film preparation method |
| CN104006883A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Imaging spectrometer based on multi-level micro reflecting mirror and manufacturing method thereof |
| CN110724906A (en) * | 2019-11-21 | 2020-01-24 | 云谷（固安）科技有限公司 | Mask plate and manufacturing method thereof |
| CN110867461A (en) * | 2019-11-26 | 2020-03-06 | 中国科学院微电子研究所 | Hyperspectral image sensor monolithic integration method, sensor and imaging equipment |
| CN113219566A (en) * | 2021-05-10 | 2021-08-06 | 东北师范大学 | Polarization sensitive broadband response long-wave infrared metamaterial absorber |
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2008
- 2008-06-04 CN CN2008100507896A patent/CN101290363B/en active Active
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102289011A (en) * | 2011-07-08 | 2011-12-21 | 中国矿业大学(北京) | Method for making rough solid test piece surface into reflecting mirror surface |
| CN102789016B (en) * | 2012-07-23 | 2014-10-15 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing multi-level miniature reflecting mirror in mixed way by adjusting, positioning and growing multiple layers of films through thick film inversion |
| CN102789017A (en) * | 2012-07-23 | 2012-11-21 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing multistage micro-mirror through inversely adjusting thick film |
| CN102789016A (en) * | 2012-07-23 | 2012-11-21 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing multi-level miniature reflecting mirror in mixed way by adjusting, positioning and growing multiple layers of films through thick film inversion |
| CN102789017B (en) * | 2012-07-23 | 2014-11-19 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing multistage micro-mirror through inversely adjusting thick film |
| CN103132039A (en) * | 2013-02-28 | 2013-06-05 | 广东省计量科学研究院 | Metal film preparation method |
| CN103132039B (en) * | 2013-02-28 | 2015-08-19 | 广东省计量科学研究院 | Metallic film preparation method |
| CN104006883A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Imaging spectrometer based on multi-level micro reflecting mirror and manufacturing method thereof |
| CN104006883B (en) * | 2014-03-10 | 2016-12-07 | 中国科学院长春光学精密机械与物理研究所 | Imaging spectrometer based on multilevel micro-reflector and manufacture method |
| CN110724906A (en) * | 2019-11-21 | 2020-01-24 | 云谷（固安）科技有限公司 | Mask plate and manufacturing method thereof |
| CN110724906B (en) * | 2019-11-21 | 2021-10-22 | 云谷（固安）科技有限公司 | Mask plate and manufacturing method thereof |
| CN110867461A (en) * | 2019-11-26 | 2020-03-06 | 中国科学院微电子研究所 | Hyperspectral image sensor monolithic integration method, sensor and imaging equipment |
| CN110867461B (en) * | 2019-11-26 | 2021-11-05 | 中国科学院微电子研究所 | Hyperspectral image sensor monolithic integration method, sensor and imaging equipment |
| CN113219566A (en) * | 2021-05-10 | 2021-08-06 | 东北师范大学 | Polarization sensitive broadband response long-wave infrared metamaterial absorber |
| CN113219566B (en) * | 2021-05-10 | 2022-09-16 | 东北师范大学 | Polarization sensitive broadband response long-wave infrared metamaterial absorber |
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| CN101290363B (en) | 2010-10-27 |
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