CN102782836A - 半导体模块的制造方法、半导体模块以及制造装置 - Google Patents

半导体模块的制造方法、半导体模块以及制造装置 Download PDF

Info

Publication number
CN102782836A
CN102782836A CN2010800648160A CN201080064816A CN102782836A CN 102782836 A CN102782836 A CN 102782836A CN 2010800648160 A CN2010800648160 A CN 2010800648160A CN 201080064816 A CN201080064816 A CN 201080064816A CN 102782836 A CN102782836 A CN 102782836A
Authority
CN
China
Prior art keywords
cooler
metal level
thermal expansion
semiconductor element
heated object
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010800648160A
Other languages
English (en)
Other versions
CN102782836B (zh
Inventor
水野宏纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of CN102782836A publication Critical patent/CN102782836A/zh
Application granted granted Critical
Publication of CN102782836B publication Critical patent/CN102782836B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0012—Brazing heat exchangers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/002—Soldering by means of induction heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/012—Soldering with the use of hot gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K9/00—Arc welding or cutting
    • B23K9/16—Arc welding or cutting making use of shielding gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/04—Tubular or hollow articles
    • B23K2101/14—Heat exchangers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/12—Copper or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75253—Means for applying energy, e.g. heating means adapted for localised heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75261—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75264—Means for applying energy, e.g. heating means by induction heating, i.e. coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/755—Cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/755—Cooling means
    • H01L2224/75502—Cooling means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/83222—Induction heating, i.e. eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/83224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83237—Applying energy for connecting using an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking
    • H01L2924/35121—Peeling or delaminating

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Die Bonding (AREA)

Abstract

在半导体模块(100)的制造方法中，通过绝缘树脂片材(40)将具有相互不同的热膨胀率的金属层(20)和冷却器(30)一体化，并且将半导体元件(10)经由焊料(15)载置在金属层(20)上的工件(1)移入回流炉(200)中。然后，在该状态下在回流炉(200)内加热，从而将半导体元件(10)安装在金属层(20)上。此时，为了使冷却器(30)的热膨胀量与金属层(20)的热膨胀量相等，以在金属层(20)和冷却器(30)之间设置温度差的方式对冷却器(30)进行加热。

Description

半导体模块的制造方法、半导体模块以及制造装置
技术领域
本发明涉及安装了半导体元件的电极层与冷却器夹着绝缘粘接层被组装在一起而成的半导体模块及其制造方法。本发明更详细地涉及降低该绝缘粘接层的剥离的半导体模块的制造方法以及制造装置。
背景技术
在混合动力汽车或电动汽车等上载置的高耐压和大电流用的电源模块在半导体元件工作时自身发热量很大。由于该原因，车载用电源模块需要具备具有高散热性的冷却构造。
作为具备冷却构造的电源模块，例如，已知在具有冷却介质流路的冷却器上层叠有绝缘树脂片材、作为电极发挥功能的金属层、半导体元件的电源模块。半导体元件通过焊料被固定在金属层上，金属层和冷却器通过绝缘树脂片材被粘接。在这样的电源模块中，从半导体元件发出的热经由热传导性优良的金属层和薄层的绝缘树脂片材而被冷却器被高效地散热。
另外，作为用于将电子部件焊接在电子电路基板上的装置，例如在专利文献1中公开了通过加热、熔化、冷却焊料而将电子部件安装在电子电路基板上的回流装置。在专利文献1中记载了：在该回流装置中，使具有多个开口部的热遮蔽部件介于远红外线加热器和被处理基板之间，从而局部地调整电子电路基板面内的加热温度。
在先技术文献
专利文献
专利文献1：日本专利文献特开2003-332727号公报
发明内容
本发明所要解决的技术问题
然而，在所述的以往的半导体模块中存在如下的问题。即，如果金属层和冷却器的热膨胀率(线膨胀系数)存在差异，则有可能由于该热膨胀率差而发生绝缘树脂片材的剥离。
例如，在所述的以往的电源模块中，在金属层由铜制成而冷却器由铝制成的情况下，铜的线膨胀系数约为17×10-6/K，铝的线膨胀系数约为24×10-6/K，因此在进行焊接时的高温环境下热膨胀量会产生差异。因此，在绝缘树脂片材中产生剪切应力，其结果是，发生剥离。在如专利文献1中所示的回流装置那样局部地调节电子电路基板面内的加热温度的情况下，也有可能发生这种剥离。由这种剥离产生的间隙有可能使作为绝缘粘接层发挥功能的绝缘树脂片材与金属层(或者冷却器)的粘接面积减少从而使电源模块的散热能力下降。
本发明是为了解决所述的以往的半导体模块具有问题点而作出的。即，本发明的技术问题是提供减少向绝缘粘接层的应力集中并抑制绝缘树脂层的剥离的半导体模块的制造方法。
用于解决技术问题的技术手段
一种以解决该技术问题为目的而作出的半导体模块的制造方法，所述半导体模块包括：半导体元件；金属层，半导体元件被安装在所述金属层上；冷却器，所述冷却器由具有与金属层不同的热膨胀率的原料构成；以及绝缘粘接层，所述绝缘粘接层将金属层和冷却器粘接并且使金属层和冷却器电绝缘，所述半导体模块的制造方法的特征在于，包括安装工序，在所述安装工序中，对被加热体进行加热，使得金属层和冷却器中的热膨胀率较低的部件即低热膨胀部件的温度比金属层和冷却器中的热膨胀率较高的部件即高热膨胀部件的温度高，在被加热体中，金属层和冷却器通过绝缘粘接层被粘接在一起而一体化，并且半导体元件经由焊料被载置在金属层上。
在上述的半导体模块的制造方法中，准备具有彼此不同的热膨胀率(线膨胀系数)的金属层和冷却器通过绝缘粘接层被粘接在一起并且半导体元件经由焊料被载置在金属层上的被加热体(工件)。然后，对该被加热体进行加热使焊料熔化从而将半导体元件安装在金属层上。在该被加热体被加热时，在将金属层和冷却部中的热膨胀率较低的部件作为低热膨胀部件、将金属层和冷却部中的热膨胀率较高的部件作为高热膨胀部件的情况下，以使低热膨胀部件的温度比高热膨胀部件的温度高的方式，对被加热体进行加热。具体地，将金属层加热至焊料的熔融温度，并且以使冷却器的热膨胀量与金属层的热膨胀量大致相等的方式对冷却器进行加热。即，如果冷却器为高热膨胀部件，则对冷却器进行加热使冷却器的温度低于金属层的温度。另一方面，如果冷却器为低热膨胀部件，则对冷却器进行加热使冷却器的温度高于金属层的温度。
即，在上述的半导体模块的制造方法中，为了使金属层和冷却器的热膨胀量一致，以在金属层和冷却器之间设置温度差的方式进行加热。如此，与像以往那样将金属层和冷却器加热到大致相等的温度的情况相比，在绝缘粘接层中产生的剪切应力减小，其结果是，能够期待绝缘粘接层的剥离得到抑制。
并且，在上述的安装工序中，可以通过从被加热体的高度方向的上侧对被加热体进行加热的第一加热部件和从被加热体的高度方向的下侧对被加热体进行加热的第二加热部件从两侧对被加热部件进行加热，并且以使高热膨胀部件和低热膨胀部件的热膨胀量大致相等的方式对第一加热部件和第二加热部件中的至少一者进行控制。通过从被加热体的高度方向的两侧对被加热体进行加热并且对至少一者的加热部件进行温度控制，能够以高精度形成温度差。
并且，在上述的安装工序中，可以通过辐射加热式加热单元从被加热体的高度方向的半导体元件侧对被加热体进行加热，并且可以在加热单元对被加热体进行加热的期间在冷却器的至少半导体元件侧的表面上配置遮蔽来自加热单元的辐射线的遮蔽部件。通过如该构成那样使用遮蔽部件覆盖冷却器的上侧表面(露出部分)来限制冷却器的加热，容易形成冷却器的金属层之间的温度差。
并且，在上述的安装工序中，可以一边冷却高热膨胀部件一边加热被加热体。作为冷却单元，例如可使用吹气枪或冷却板。通过使用这样的冷却单元对高热膨胀部件进行冷却，更容易形成温度差。
并且，作为其他的实施方式，本发明包括以下的半导体模块，所述半导体模块的特征在于，包括：半导体元件；金属层，通过焊料将半导体元件安装在所述金属层上；冷却器，所述冷却器由具有比金属层高的热膨胀率的原料构成；绝缘粘接层，所述绝缘粘接层将金属层和冷却器粘接在一起，并且使金属层和冷却器电绝缘；以及遮蔽膜，所述遮蔽膜与金属层电气绝缘，覆盖冷却器的半导体元件侧的表面，并遮蔽辐射线。
并且，作为其他的实施方式，本发明包括以下的半导体模块的制造装置，所述半导体模块包括：半导体元件；金属层，半导体元件被安装在所述金属层上；冷却器，所述冷却器由具有与金属层不同的热膨胀率的原料构成；以及绝缘粘接层，所述绝缘粘接层将金属层和冷却器粘接在一起，并且使金属层和冷却器电绝缘，所述半导体模块的制造装置的特征在于，包括：加热室，所述加热室容纳被加热体，在所述被加热体中，金属层和冷却器通过绝缘粘接层被粘接在一起而一体化，并且半导体元件经由焊料被载置在金属层上；以及加热单元，所述加热单元对被加热体进行加热，使得金属层和冷却器中的热膨胀率较低的部件即低热膨胀部件的温度比金属层和冷却器中的热膨胀率较高的部件即高热膨胀部件的温度高。
发明效果
根据本发明，实现了减小向绝缘树脂层的热应力并且抑制绝缘树脂层的剥离的半导体模块的制造方法。
附图说明
图1是示出实施方式涉及的电源模块的构成的图；
图2是示出实施方式涉及的回流炉的构成的图；
图3是示出被加热体的温度与被加热体的热膨胀量的关系的图；
图4是示出应用例涉及的电源模块的构成的图。
具体实施方式
以下，参照附图对本发明涉及的装置具体化后的实施方式详细地进行说明。在以下的实施方式中，将本发明用作混合动力汽车用的智能电源模块。
[第一实施方式]
[电源模块的构成]
如图1所示，本实施方式的电源模块100包括：作为发热体的半导体元件10；金属层20，半导体元件10被安装在金属层20上；在内部包括冷却介质流路的冷却器30；使金属层20和冷却器30绝缘并将两者接合的绝缘树脂片材40；以及被固定在冷却器30上并保持汇流条61的汇流条壳体60。电源模块100经由绝缘树脂片材40向冷却器30排放在半导体元件10中产生的热。
电源模块100如图1所示在冷却器30上层叠有绝缘树脂片材40、金属层20、以及半导体元件10。在本说明书中，将该层叠方向作为高度方向、将该高度方向上半导体元件10侧作为上侧、将该高度方向上冷却器30侧作为下侧进行说明。
半导体元件10是构成逆变电路的IGBT等的元件，并且通过接合线13与汇流条壳体60的汇流条61电连接。半导体元件10被安装在金属层20上，并通过焊料15被固定在金属层20上。另外，车载用的电源模块中安装有多个半导体元件，但在本说明书中为了简化说明而概略地示出。
金属层20是安装半导体元件10的基板。金属层20兼具有作为电极的功能以及作为排放来自半导体元件10的热量的散热板的功能。因此，对于金属层20，利用的是热传导率和电传导率很高的物质。另外，在本实施方式中，使用厚度为2mm～3mm的铜(Cu)作为金属层。
绝缘树脂片材40是将冷却器30和金属层20接合的粘接片材。另外，绝缘树脂片材40兼具使冷却器30和金属层20电绝缘的功能。因此，对于绝缘树脂片材40，利用具有粘接功能和绝缘功能的物质。另外，在本实施方式中，使用厚度约为200μm的环氧系的热硬化性树脂作为绝缘树脂片材40。
冷却器30具有将辊轧薄板成形为波状的散热片、以及夹持散热片而将散热片固定的顶板和底板。构成冷却器30的各部件由具有很高的热传导性并且重量很轻的铝(Al)形成。由顶板、底板以及散热片划分的中空部构成冷却介质流路。可使用液体和气体中的任一者作为冷却介质。为了将来自半导体元件10的热高效地传递至冷却器30，冷却器30通过焊料被一体地接合。作为焊料，可使用Al-Si系合金、Al-Si-Mg系合金等的铝焊料。另外，冷却器30的方式仅是一个例子，而不限于此。
在本方式中，由铜构成的金属层20的线膨胀系数约为17×10-6/K，由铝构成的冷却器30的线膨胀系数约为24×10-6/K。即，金属层20和冷却器30的线膨胀系数(热膨胀率)存在差异，冷却器30比金属层20更容易膨胀。
[回流炉]
接着，对进行电源模块100的半导体元件10的安装的回流炉进行说明。如图2所示，本实施方式的回流炉200包括：容纳工件1的加热室201；位于加热室201的上面侧并射出辐射线从而对工件1进行加热的辐射加热式的加热器202；位于加热室201的下面侧、放置工件1并对工件1进行加热的电热板203；抑制来自加热器202的辐射线通过的遮蔽板204、205；以及向加热室201内喷射冷却风的吹气枪206。
本实施方式中所说的工件1是半导体元件10被焊接接合之前的电源模块100。即，工件1例如是半导体元件10被放置于在金属层20上印刷的膏状焊料上的状态的工件。另外，工件1是金属层20和冷却器30通过绝缘树脂片材40被粘接在一起的状态的工件。
在回流炉200中，如图2所示，将工件1放置在电热板203上。然后，通过来自电热板203的热从下侧对工件1进行加热。并且，将工件1配置在加热器202的下方。然后，通过来自加热器202的辐射线从上侧对工件1进行加热。即，回流炉200能够从其高度方向的上侧和下侧这两侧对工件1进行加热。
遮蔽板204、205被可自由移动地设置在加热室201内。然后，在工件1被加热时，遮蔽板204覆盖冷却器30和绝缘树脂片材40的上表面(特别是露出的部分)，遮蔽板205覆盖半导体元件10的上表面。即，从高度方向的上侧观察工件1，遮蔽板204、205覆盖工件1的金属层20以外的部分。遮蔽板204、205只要是反射来自加热器202的辐射线并抑制该辐射线的通过的物质即可。在本实施方式中，使用在表面实施了镀铜的钢板作为遮蔽板。
并且，如图2所示，遮蔽板204具有覆盖冷却器30的上表面的遮蔽部214、以及覆盖绝缘树脂片材40的上表面的遮蔽部224，并且被加工为遮蔽部214、224一体化的形状。
另外，遮蔽板204的遮蔽部214和遮蔽板204的遮蔽部224也可以分体设置。并且，遮蔽板204、205例如可以是具有多个部分并且各部分被组合而遮蔽工件1的必要场所的板，也可以是在一张板上切除工件的非覆盖部分(在本实施方式中，是金属层20的部分)后的板。
吹气枪206被可自由移动地设置在加热室201内。然后，吹气枪206朝向冷却器30的难以通过遮蔽板204遮蔽的场所射出冷却风，而对冷却器30的表面进行冷却。另外，在不需要通过吹气枪206对冷却器30进行冷却的情况(例如，仅通过遮蔽板204、205的遮蔽就能够实现下述的温度控制的情况)下，吹气枪206退避到加热室201外。
[焊接步骤]
接下来，对利用上述的回流炉200来进行电源模块100的焊接的步骤进行说明。
首先，如图2所示，将工件1配置在电热板203上。然而，将遮蔽板204、205移动到工件1与加热器202之间。具体地，将遮蔽板204配置为覆盖冷却器30和绝缘树脂片材40的上表面，将遮蔽板205配置为覆盖半导体元件10的上表面。
接下来，开始通过加热器202和电热板203进行的加热。具体地，至少将金属层20加热至焊料15的熔融温度。此时，金属层20未被遮蔽板204、205覆盖，金属层20吸收来自加热器202的辐射线。因此，金属层20被加热器202加热。当金属层20被加热时，该热传递到焊料15，焊料15处于熔融状态。
并且，冷却器30或绝缘树脂片材40由于被遮蔽板204覆盖，因此几乎不吸收来自加热器202的辐射线。因此，冷却器30或绝缘树脂片材40几乎不受来自加热器202的辐射线的影响。同样地，半导体元件10由于被遮蔽板205覆盖，因此也几乎不受来自加热器202的辐射线的影响。
另一方面，在冷却器30侧通过电热板203加热冷却器30。具体地，在回流炉200中，进行电热板203的加热控制使得冷却器30的热膨胀量(即，向宽度方向的扩展量)与金属层20的热膨胀量大致相等。例如，在300℃下实施焊接的情况下，以使金属层20为300℃的方式使用加热器202对工件1进行辐射加热，另一方面，在冷却器30侧以使冷却器30为212℃的方式进行控制。然后，在通过加热器202和电热板203对工件1进行加热的期间，连续地检测金属层20的温度和冷却器30的温度，并且以使两者的热膨胀量大致相等的方式随着金属层20的温度上升提高冷却器30的温度。即，以能够维持金属层20与冷却器30的热膨胀量差处于规定值以内的状态的方式，控制电热板203。
即，在该回流工序(安装工序的一例)中，以使金属层20和冷却器30的热膨胀量差处于阈值以下的方式，在金属层20和冷却器30中设置温度差。如此，以使金属层20和冷却器30的热膨胀量不产生差异的方式进行加热控制，因此绝缘树脂片材40难以产生扭曲，应力集中得到抑制。
另外，在冷却器30的温度调整时，仅通过电热板203的加热控制进行冷却器30的温度调节，但也可以利用吹气枪206使冷却风接触冷却器30的同时进行温度的微调整。另外，也可以取代遮蔽板204、205通过冷却风对冷却器30进行冷却来使金属层20和冷却器30具有温度差。
图3示出了被加热体的温度和被加热体的热膨胀量的关系。在以往的实施方式中，将金属层20的温度和冷却器30的温度一起加热至焊料15的熔融温度(图3中的A)。即，金属层20的温度和冷却器30的温度相等。因此，如图3中的D所示，由于热膨胀率差引起热膨胀量产生差异。其结果是，造成绝缘树脂片材40的剥离。
另一方面，在本实施方式中，使金属层20的温度和冷却器30的温度存在差异，而使两者的热膨胀量相等。即，在本实施方式中，冷却器30的热膨胀率比金属层20的热膨胀率高。于是，减小冷却器30的温度使其低于金属层20的温度，从而使冷却器30的热膨胀量与金属层20的热膨胀量一致。例如，当金属层20为图3中的温度A时，对冷却器30进行温度调节使其变为温度B，冷却器30在温度B的膨胀量与金属层在温度A的膨胀量C相等。在本实施方式中，由于热膨胀量相等，因此绝缘树脂片材40产生的扭曲很小，其结果是，绝缘树脂片材40的剥离得到抑制。
[第二实施方式]
[电源模块的构成]
在第二实施方式涉及的电源模块110中，如图4所示，冷却器30的位于半导体元件10侧的表面中的、与绝缘树脂片材40不接触的部分被遮蔽膜50覆盖。汇流条壳体60被固定在遮蔽膜50上。
遮蔽膜50是反射来自加热器202的辐射线并抑制该辐射线通过的膜，例如是Au膜。即，遮蔽膜50具有与回流炉200的遮蔽板204、205相同的功能。并且，遮蔽膜50与金属层20不接触，并且经由绝缘树脂片材40使遮蔽膜50与金属层20电绝缘。
在电源模块110中，冷却器30的加热器202侧的表面被遮蔽膜50覆盖，因此加热器202对冷却器30的加热不起作用。因此，与第一实施方式同样地，可在金属层20和冷却器30之间设置温度差。
在电源模块110中，在电源模块自身上设置有遮蔽部件，因此不需要像第一实施方式那样在回流炉上设置遮蔽板。因此，即使电源模块的构成发生了改变，也不需要改变回流炉的构成。因此，回流炉的构成与第一实施方式相比变得简化。
另一方面，通过像第一实施方式那样在回流炉上设置遮蔽板，电源模块中不需要遮蔽膜。因此，电源模块的部件数量可以很少。另外，对于冷却器的制造，由于不需要覆盖遮蔽膜的工序，因此与第二实施方式相比也变得简化。
在如以上详细地进行说明的，在本实施方式的电源模块的焊接工序中，以使金属层20(低热膨胀部件)的温度比冷却器30(高热膨胀部件)的温度高的方式，对工件1进行加热。具体地，将金属层20加热至焊料15的熔融温度，并且以使冷却器30的热膨胀量与金属层20的热膨胀量大致相等的方式加热冷却器30。如此，通过以使金属层20和冷却器30存在温度差的方式加热金属层20和冷却器30，与以使金属层20和冷却器30为大致相等的温度的方式加热金属层20和冷却器30情况相比，两者的热膨胀量差减小。因此，在绝缘树脂片材40中产生剪切应力减小，其结果是，能够期待绝缘树脂片材40的剥离得到抑制。
另外，本实施方式仅是示例，而绝不用于限制本发明。因此，当然能够在不脱离本发明的主旨的范围内对本发明进行各种修改和变型。例如，在本实施方式中，将本发明应用于混合动力汽车用的智能电源模块，但也可以将本发明应用于在电子电路基板上安装电子部件的一般的模块。
另外，在实施方式中，利用辐射加热式加热器202或电热板203作为对工件1进行加热的单元，但不限于此。例如，也可以应用热风、激光加热、电弧加热、电磁感应加热、电子束加热、离子束加热。
另外，在实施方式中，利用由吹气枪206产生的冷却风作为对工件1进行冷却的单元，但不限于此。例如，也可以应用冷却板、冷却水、压缩冷却。
另外，在实施方式中，使用片状部件40作为将金属层20和冷却器30接合并使两者绝缘的部件，但不限于此。例如，也可以使用板状部件(陶瓷绝缘板等)。
另外，在实施方式中，由于冷却器30的热膨胀率比金属层20的热膨胀率高，因此对冷却器30的温度进行加热调整使其低于金属层20，但不限于此。即，在冷却器30的热膨胀率比金属层20的热膨胀率低的情况下，对冷却器30的温度进行加热调整使其高于金属层20，从而使冷却器30和金属层20的热膨胀量一致。
符号说明
Figure BPA00001609030600101
Figure BPA00001609030600111

Claims (11)

1.一种半导体模块的制造方法，所述半导体模块包括：
半导体元件；
金属层，所述半导体元件被安装在所述金属层上；
冷却器，所述冷却器由热膨胀率与所述金属层不同的原料构成；以及
绝缘粘接层，所述绝缘粘接层粘接所述金属层和所述冷却器，并且使所述金属层与所述冷却器电绝缘，
所述半导体模块的制造方法的特征在于，
包括安装工序，在所述安装工序中，对通过所述绝缘粘接层将所述金属层和所述冷却器粘接成一体、并将所述半导体元件隔着焊料载置在所述金属层上的被加热体进行加热，使得所述金属层和所述冷却器中的热膨胀率较低的部件即低热膨胀部件的温度比所述金属层和所述冷却器中的热膨胀率较高的部件即高热膨胀部件的温度高。
2.如权利要求1所述的半导体模块的制造方法，其特征在于，
在所述安装工序中，将所述金属层加热至所述焊料的熔融温度，并且以使所述冷却器的热膨胀量与所述金属层的热膨胀量大致相等的方式进行加热。
3.如权利要求1或2所述的半导体模块的制造方法，其特征在于，
在所述安装工序中，通过从所述被加热体的高度方向上的上侧对所述被加热体进行加热的第一加热部件、和从所述被加热体的高度方向上的下侧对所述被加热体进行加热的第二加热部件，从两侧对所述被加热部件进行加热，并且对所述第一加热部件和所述第二加热部件中的至少一者进行控制，以使所述高热膨胀部件和所述低热膨胀部件的热膨胀量大致相等。
4.如权利要求1至3中任一项所述的半导体模块的制造方法，其特征在于，
在所述安装工序中，通过辐射加热式的加热单元从所述被加热体的高度方向上的所述半导体元件侧对所述被加热体进行加热，并且在所述加热单元对被所述加热体进行加热的期间，在所述冷却器的至少所述半导体元件侧的表面上配置遮蔽来自所述加热单元的辐射线的遮蔽部件。
5.如权利要求1至4中任一项所述的半导体模块的制造方法，其特征在于，
在所述安装工序中，一边冷却高热膨胀部件一边加热所述被加热体。
6.一种半导体模块，其特征在于，包括：
半导体元件；
金属层，半导体元件通过焊料被安装在所述金属层上；
冷却器，所述冷却器由热膨胀率比所述金属层高的原料构成；
绝缘粘接层，所述绝缘粘接层粘接所述金属层和所述冷却器，并且使所述金属层与所述冷却器电绝缘；以及
遮蔽膜，所述遮蔽膜与所述金属层电绝缘，覆盖所述冷却器的所述半导体元件侧的表面，并遮蔽辐射线。
7.一种半导体模块的制造装置，所述半导体模块包括：
半导体元件；
金属层，所述半导体元件被安装在所述金属层上；
冷却器，所述冷却器由热膨胀率与所述金属层不同的原料构成；以及
绝缘粘接层，所述绝缘粘接层粘接所述金属层和所述冷却器，并且使所述金属层和所述冷却器电绝缘，
所述半导体模块的制造装置的特征在于，包括：
加热室，所述加热室容纳通过所述绝缘粘接层将所述金属层和所述冷却器粘接成一体、并将所述半导体元件隔着焊料载置在所述金属层上的被加热体；以及
加热单元，所述加热单元对所述被加热体进行加热，使得所述金属层和所述冷却器中的热膨胀率较低的部件即低热膨胀部件的温度比所述金属层和所述冷却器中的热膨胀率较高的部件即高热膨胀部件的温度高。
8.如权利要求7所述的半导体模块的制造装置，其特征在于，
所述加热单元将所述金属层加热至所述焊料的熔融温度，并且以使所述冷却器的热膨胀量与所述金属层的热膨胀量大致相等的方式进行加热。
9.如权利要求7或8所述的半导体模块的制造装置，其特征在于，
所述加热单元包括：
第一加热部件，所述第一加热部件从所述被加热体的高度方向上的上侧对所述被加热体进行加热；
第二加热部件，所述第二加热部件从所述被加热体的高度方向上的下侧对所述被加热体进行加热，
控制所述第一加热部件和所述第二加热部件中的至少一者，以使得所述高热膨胀部件和所述低热膨胀部件的热膨胀量大致相等。
10.如权利要求7至9中任一项所述的半导体模块的制造装置，其特征在于，
所述加热单元是从所述被加热体的高度方向上的所述半导体元件侧对所述被加热体进行加热的辐射加热式的加热单元，
包括遮蔽来自所述加热单元的辐射线的遮蔽部件，
在所述加热单元对所述被加热体进行加热的期间，在所述冷却器的至少所述半导体元件侧的表面上配置所述遮蔽部件。
11.如权利要求7至10中任一项所述的半导体模块的制造装置，其特征在于，
包括冷却所述高热膨胀部件的冷却单元。
CN201080064816.0A 2010-02-24 2010-02-24 半导体模块的制造方法、半导体模块以及制造装置 Expired - Fee Related CN102782836B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/052810 WO2011104826A1 (ja) 2010-02-24 2010-02-24 半導体モジュールの製造方法，半導体モジュールおよび製造装置

Publications (2)

Publication Number Publication Date
CN102782836A true CN102782836A (zh) 2012-11-14
CN102782836B CN102782836B (zh) 2016-03-09

Family

ID=44506273

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080064816.0A Expired - Fee Related CN102782836B (zh) 2010-02-24 2010-02-24 半导体模块的制造方法、半导体模块以及制造装置

Country Status (5)

Country Link
US (1) US8791564B2 (zh)
EP (1) EP2541594A4 (zh)
JP (1) JP5561356B2 (zh)
CN (1) CN102782836B (zh)
WO (1) WO2011104826A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109983350A (zh) * 2016-11-29 2019-07-05 东京毅力科创株式会社 载置台和电子器件测试装置

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
JP5813137B2 (ja) * 2011-12-26 2015-11-17 三菱電機株式会社 電力用半導体装置及びその製造方法
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9296056B2 (en) * 2014-07-08 2016-03-29 International Business Machines Corporation Device for thermal management of surface mount devices during reflow soldering
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
DE102019206262A1 (de) 2019-05-02 2020-11-05 Abb Schweiz Ag Halbleiterbauteil, Kraftfahrzeug und Verfahren zur Herstellung eines Halbleiterbauteils
JP2021011830A (ja) * 2019-07-04 2021-02-04 本田技研工業株式会社 ポンプの組立方法
EP4266363A1 (en) * 2022-04-21 2023-10-25 Airbus SAS Improved power component for electric or hybrid aircraft

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146512A (ja) * 2002-10-23 2004-05-20 Toyota Motor Corp 半導体装置およびその製造方法
US20080128896A1 (en) * 2006-12-05 2008-06-05 Keiji Toh Semiconductor apparatus and manufacturing method thereof
JP2008172066A (ja) * 2007-01-12 2008-07-24 Fuji Electric Device Technology Co Ltd 半導体装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01272123A (ja) 1988-04-25 1989-10-31 Fujitsu Ltd 半導体チップの実装方法
JPH08213724A (ja) 1995-01-31 1996-08-20 Mitsumi Electric Co Ltd 回路基板
JPH09219582A (ja) 1996-02-09 1997-08-19 Fuji Xerox Co Ltd リフロー装置およびその温度制御方法
JP4272306B2 (ja) 1999-06-15 2009-06-03 株式会社タムラ製作所 リフロー装置
JP2001358263A (ja) 2000-06-12 2001-12-26 Hitachi Ltd 半導体装置およびその回路形成方法
JP2003332727A (ja) 2002-05-15 2003-11-21 Sony Corp 熱遮蔽部分材及びリフロー装置
CN100468725C (zh) * 2006-07-25 2009-03-11 威盛电子股份有限公司 抗静电放电的散热模块和其系统
US8169789B1 (en) * 2007-04-10 2012-05-01 Nvidia Corporation Graphics processing unit stiffening frame
JP2008294280A (ja) * 2007-05-25 2008-12-04 Showa Denko Kk 半導体装置
JP5103064B2 (ja) 2007-06-19 2012-12-19 株式会社タムラ製作所 リフロー装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146512A (ja) * 2002-10-23 2004-05-20 Toyota Motor Corp 半導体装置およびその製造方法
US20080128896A1 (en) * 2006-12-05 2008-06-05 Keiji Toh Semiconductor apparatus and manufacturing method thereof
JP2008172066A (ja) * 2007-01-12 2008-07-24 Fuji Electric Device Technology Co Ltd 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109983350A (zh) * 2016-11-29 2019-07-05 东京毅力科创株式会社 载置台和电子器件测试装置

Also Published As

Publication number Publication date
WO2011104826A1 (ja) 2011-09-01
EP2541594A1 (en) 2013-01-02
JPWO2011104826A1 (ja) 2013-06-17
US8791564B2 (en) 2014-07-29
EP2541594A4 (en) 2016-12-07
US20120319253A1 (en) 2012-12-20
CN102782836B (zh) 2016-03-09
JP5561356B2 (ja) 2014-07-30

Similar Documents

Publication Publication Date Title
CN102782836B (zh) 半导体模块的制造方法、半导体模块以及制造装置
US9076755B2 (en) Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module
KR101971756B1 (ko) 파워 모듈용 기판, 히트 싱크 부착 파워 모듈용 기판, 파워 모듈 및 파워 모듈용 기판의 제조 방법
US8391011B2 (en) Cooling device
US6875962B2 (en) Electric heating system for a motor vehicle
US9968012B2 (en) Heat-sink-attached power module substrate, heat-sink-attached power module, and method for producing heat-sink-attached power module substrate
EP3208839B1 (en) Substrate with cooler for power modules and method for producing same
CN102576697B (zh) 功率模块用基板、带散热器的功率模块用基板、功率模块、功率模块用基板的制造方法及带散热器的功率模块用基板的制造方法
US11090750B2 (en) Method for producing a cooling device, a cooling device and a cooling arrangement
US8941035B2 (en) Soldering method
JP2016181549A (ja) ヒートシンク付きパワーモジュール用基板
US10314208B2 (en) Cooling device, method for producing a cooling device and power circuit
US8698053B2 (en) Method for producing an electronic device
JP2004022973A (ja) セラミック回路基板および半導体モジュール
JP2002329938A (ja) セラミック回路基板
JP5987418B2 (ja) ヒートシンク付パワーモジュール用基板の製造方法
US20140224862A1 (en) Method of manufacturing a semiconductor device
CN116458274A (zh) 尤其用于冷却电力电子元件的液体冷却体
CN202363444U (zh) 无金属底板功率模块
JP2004327711A (ja) 半導体モジュール
JP6340904B2 (ja) インバータ装置、およびその製造方法
EP2403026A2 (en) Connection structure of elements and connection method
CN111656518B (zh) 铜-钛-铝接合体、绝缘电路基板、带散热器的绝缘电路基板、功率或led或热电模块
US11889666B2 (en) Power device assemblies having embedded PCBs and methods of fabricating the same
CN219660011U (zh) 功率模块以及机电装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160309

Termination date: 20180224