CN102782246B - 流量控制装置和方法 - Google Patents
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Abstract
一种流量控制装置，包括：其中限定一个或更多个开口的外壳；可与外壳中的所述一个或更多个开口对准和不对准的阀结构；和一个或更多个插塞，每一个插塞位于所述一个或更多个开口中的每一个中，各个插塞可通过暴露于井下流体和所施加的溶解流体中的一种或更多种而减小，以及用于执行一系列井下操作的方法。
Description
交叉引用
本申请要求享有2010年3月5日提交的、发明名称为“流量控制装置和方法”的美国专利申请序列号12/718,510的申请日期的权益。
背景技术
在钻井和完井领域，长期以来众所周知的是，在管柱上设置开口以沿基本上径向方向提供穿过管柱的流体入口。换句话说，这样的开口允许在内部尺寸流道和在管柱与井壁（套管或裸井）之间形成的环空之间流体连通。使用与这样的开口相协作的可开闭的阀以有选择地防止上述的流体运动也已经知道了很长一段时间。
以前普遍使用和信赖的例子是滑动套筒装置。本领域普通技术人员将会立刻熟知有关滑动套筒的术语，并认为，这样的装置包括：具有开口的外壳；套筒，其可相对于外壳平移，以与所述开口完全不对准，或者使其一端口与开口对准；和将套筒偏压至选定位置（打开或关闭）的弹簧。
通常，所述装置在套筒处于关闭位置的情况下下放到井孔中；进行操作；在用于打开套筒的工具单独下放的情况下，套筒被打开；进行其它操作；和采用另外的下放步骤来关闭套筒。该工艺很容易接受，所以常常使用。
由于每次下放到钻孔中都是非常昂贵的事情，本领域一直接受给定系列操作所需的下放次数上的减少。
发明内容
一种流量控制装置，包括：其中限定一个或更多个开口的外壳；能够与外壳中的所述一个或更多个开口对准以及不对准的阀结构；和一个或更多个插塞，每一个插塞位于所述一个或更多个开口中的每一个中，各个插塞可通过暴露于井下流体和所施加的溶解流体中的一种或更多种而减小。
一种用于以次数减少的机械干涉下放来执行一系列井下操作的方法，其包括：将具有如下特征的装置下放到目标深度，该装置包括：其中限定一个或更多个开口的外壳、可与外壳中的所述一个或更多个开口对准以及不对准的阀结构、和一个或更多个插塞，每一个插塞位于所述一个或更多个开口中的每一个中，各个插塞可通过暴露于井下流体和所施加的溶解流体中的一种或更多种而减小；进行需要外壳的径向流体渗透性受到限制的井下操作；减小插塞；执行需要流体压力穿过一个或更多个开口进行连通的井下操作；和进行机械干涉以关闭阀结构，从而使该装置的一个或更多个开口径向不渗透。
附图说明
现在参照附图，其中同样的元件在这几附图中标记相同。
图1是依照其公开内容的流量控制装置的示意性截面图；
图2是在此公开的已经嵌入到封装材料中并截取的粉末210的显微照片；
图3是粉末颗粒12的示例性实施例的示意图，该图为图3中的截面4-4所表示的示例性截面图；
图4是在此公开的粉末压块的示例性实施例的显微照片；
图5是使用粉末制成的具有单层粉末颗粒的粉末压块的示例性实施例的示意图，就如沿着图5的截面6-6显现的情况；
图6是使用粉末制成的具有多层粉末颗粒的粉末压块的另一个示例性实施例的示意图，就如沿着图5的截面6-6显现的情况；和
图7是在此公开的粉末压块的性能随着时间变化以及粉末压块环境条件的变化而变化的示意图。
具体实施方式
参照图1，所示的流量控制装置10包括具有一个或更多个开口14的外壳12。该一个或更多个开口14临时由插塞16进行流体限制。所容许的流体渗透度与利用插塞16执行的操作有关。流体渗透范围从不渗透到任意选定的渗透。最后，装置10包括一阀结构18，在一个实施例中，所述阀结构可以是滑动套筒，如图所示。在所示的实施例中，滑动套筒18进一步还包括一个或更多个端口20，根据需要，所述一个或更多个端口可与所述一个或更多个开口14对准或不对准。
插塞16可以由多种材料构造，这些材料包括但不限于：诸如镁、铝、镁合金、铝合金等等的可溶解金属；诸如可从位于意大利Altopascia的5droplax,S.r.l.获得的聚合物HYDROCENETM、可从Cargill Dow LLC的分部——Nature-WorksTM获得的聚交酯（“PLA”）聚合物4060D、可从Du Pont Specialty Chemicals获得的TLF-6267聚乙二醇酸（“PGA”）、聚己内酰胺以及PLA与PGA的混合物的可溶解的聚合物材料；诸如氨基磺酸、三氯乙酸和柠檬酸的采用蜡或其他合适的粘合材料结合在一起的固态酸，聚乙烯均聚物和石蜡；诸如聚环氧乙烷的聚亚烷基氧化物；诸如聚乙烯乙二醇（这类聚合物更优选在水基钻井流体中，因为它们可慢慢地溶解于水）的聚二醇；以及诸如石灰石的天然材料等等。上述一种或更多种材料中的每种材料可选择和/或构造成基于对天然存在的井下流体的暴露和对选择分布的流体的暴露而是可减少的（即可在允许的一些渗透率范围内进行降解以完成插塞的分解）。例如，经过选定的时间段，选定的材料在暴露于天然井流体钻井泥浆或酸之后可溶解。计划用作插塞16的一种工程材料是可溶解的高强度材料。这些轻质的、高强度的、选择性地可控降解的材料包括由覆置粉末材料形成的完全致密的烧结粉末压块，覆置粉末材料包括具有各种单层和多层纳米级覆层的各种轻质颗粒芯和芯材料。这些粉末压块由覆置金属粉末制成，包括各种电化学活性（例如具有较高的标准氧化电势）的轻质高强度颗粒芯和芯材料，例如电化学活性金属，这些材料分散在由金属覆置材料的各种纳米级金属覆层形成的网格状纳米基体中，尤其用于井眼应用。这些粉末压块提供了机械强度性能的独特和有利的组合，例如压缩强度和剪切强度、低密度和可选、可控的腐蚀性能，尤其是在各种井眼流体中快速可控的溶解。例如，这些粉末的颗粒芯和覆层可选择成提供适用于压缩强度和剪切强度可与各种其他工程材料（包括碳、不锈钢和合金钢）相匹敌的高强度工程材料的烧结粉末压块，但同时具有可与各种聚合物、弹性体、低密度多孔陶瓷和复合材料相匹敌的低密度。关于另一个例子，这些粉末和粉末压块材料可构造成响应于环境条件的变化提供可选择的和可控的降解或清除，例如，响应于紧邻由压块形成的产品的井眼性能或状态的变化（包括与粉末压块接触的井眼流体的性能变化）而从极低溶解速率转变为很快的溶解速率。所述的可选择的和可控的降解或清除特征还允许由这些材料制成的产品（例如井眼工具或其他部件）的尺寸稳定性和强度得到保持，直至不再需要这些产品。此时，可改变预定的环境条件，例如井眼状态（包括井眼流体温度、压力或pH值），以通过快速溶解加速去除它们。下面将进一步描述这些覆置粉末材料和粉末压块、由它们形成的工程材料以及制造它们的方法。
参照图2，金属粉末210包括多个金属覆置粉末颗粒212。粉末颗粒212可以形成为提供粉末210，包括易流动粉末，这些粉末可以以具有各种形状和尺寸的各种模子或模具（未显示）浇注或以其他方式处置，可以用来构造在此所述的粉末压块400（图5和6），粉末压块400可用作或者用来制造各种制品，包括各种井眼工具和部件。
粉末210的每个金属覆置粉末颗粒212包括颗粒芯214和设置在颗粒芯214上的金属覆层216。颗粒芯214包括芯材料218。芯材料218可以包括任何适合的用于形成提供粉末颗粒212的颗粒芯214的材料，可以烧结所述粉末颗粒，以形成具有可选择的和可控的溶解特性的轻质、高强度粉末压块400。适合的芯材料包括标准氧化电势（standard oxidation potential）大于或等于Zn的标准氧化电势的电化学活性金属，包括Mg、Al、Mn、或Zn或它们的组合。这些电化学活性金属极易与多种普通井眼流体反应，包括许多离子流体或高极性流体，诸如那些含有各种各样的氯化物的流体。例子包括包含氯化钾（KCl）、盐酸（HCl）、氯化钙（CaCl2）、溴化钙（CaBr2）或溴化锌（ZnBr2）的流体。芯材料218还可以包括其电化学活性比Zn低的其他金属或非金属材料或它们的组合。适合的非金属材料包括陶瓷、复合物、玻璃或碳或它们的组合。芯材料218可选择成在预定井眼流体中提供高溶解速率，但也可以选择成提供较低的溶解速率，包括零溶解，其中，纳米基体材料的溶解导致颗粒芯214在与井眼流体的交接面处快速破坏，并从颗粒压块释放，这样，利用这些芯材料218的颗粒芯214制成的颗粒压块的实际溶解速率较高，即使芯材料218本身具有较低的溶解速率，包括在井眼流体中基本上不能溶解的芯材料220。
对于如芯材料218那样的电化学活性金属（包括Mg、Al、Mn或Zn）来说，这些金属可用作纯金属或者彼此任何组合，包括这些材料的各种合金组合，如这些材料的二元、三元或四元合金。这些组合也可以包括这些材料的复合物。此外，除彼此之间的组合之外，Mg、Al、Mn或Zn芯材料18也可以包括其他组分，包括各种合金添加剂，以改变颗粒芯214的一种或更多种性能，例如改善芯材料218的强度，降低密度，或改变溶解特性。
在这些电化学活性金属中，Mg，无论作为纯金属、合金还是复合材料，由于其密度低，具有形成高强度合金的能力，以及电化学活性度高，其尤其有用，因为它具有比Al、Mn或Zn更高的标准氧化电势。Mg合金包括具有Mg作为合金组分的全部合金。与在此所述的其他电化学活性金属相结合而作为合金组分的Mg合金尤其有用，包括二元的Mg-Zn、Mg-Al和Mg-Mn合金、以及三元的Mg-Zn-Y和Mg-Al-X合金，这里X包括Zn、Mn、Si、Ca或Y或它们的组合。这些Mg-Al-X合金可以包括（按重量计）最高大约85%的Mg、最高大约15%的Al和最高大约5%的X。颗粒芯214和芯材料218，尤其是包括Mg、Al、Mn或Zn或它们的组合的电化学活性金属，还可以包括稀土元素或稀土元素的组合。在此所使用的稀土元素包括Sc、Y、La、Ce、Pr、Nd或Er或稀土元素的组合。在此提示，稀土元素或稀土元素组合可以（按重量计）存在大约5%或更少的量。
颗粒芯214和芯材料218具有熔融温度（TP）。在此所使用的TP包括芯材料218内部出现初熔或熔化或其他形式的部分熔融时的最低温度，无论芯材料218是否包括纯金属、带有不同熔融温度的多相的合金、或具有不同熔融温度的材料的复合物。
颗粒芯214可以具有任何适合的颗粒尺寸或颗粒尺寸范围或颗粒尺寸分布。例如，颗粒芯214可以选择成提供由图2总体上所示的在平均值或均值附近的正常型或高斯型单峰分布表示的平均颗粒尺寸。在另一个例子中，颗粒芯214可以选择或混合成提供多峰分布的颗粒尺寸，包括多个平均颗粒芯尺寸，例如均质双峰分布的平均颗粒尺寸。颗粒芯尺寸分布的选择可用来确定例如粉末210的颗粒212的颗粒尺寸和颗粒间隔215。在一个示例性实施例中，颗粒芯214可以具有单峰分布和大约51μm到大约300μm的平均颗粒直径，更尤其是大约80μm到大约120μm的平均颗粒直径，以及更加尤其是大约100μm的平均颗粒直径。
颗粒芯214可以具有任何适合的颗粒形状，包括任何规则或不规则几何形状或者它们的组合。在一个示例性实施例中，颗粒芯214为大体上球形的电化学活性金属颗粒。在另一个示例性实施例中，颗粒芯214为大体上不规则形状的陶瓷颗粒。在又一个示例性实施例中，颗粒芯214为碳或其它纳米管结构或空心玻璃微球。
粉末210的每个金属覆置粉末颗粒212还包括设置在颗粒芯214上的金属覆层216。金属覆层216包括金属覆置材料220。金属覆置材料220赋予粉末颗粒212和粉末210金属性质。金属覆层216为纳米级覆层。在一个示例性实施例中，金属覆层216可以具有大约25nm到大约2500nm的厚度。金属覆层216的厚度可以在颗粒芯214的表面上变化，但是优选在颗粒芯214的表面上具有基本上均匀的厚度。金属覆层216可以包括如图3所示的单层，或者可以包括多层而作为多层覆置结构。在单层覆置中，或在多层覆置的每层中，金属覆层216可以包括单个组分化学元素或单个化合物，或者可以包括多个化学元素或多种化合物。在层包括多种化学组分或化合物的情况下，它们可以具有各式各样的均质或非均质分布，包括金相的均质或非均质分布。这可以包括渐变分布，在渐变分布中，化学组分或化合物的相对量根据层厚度上的相应组分分布曲线（profiles）而变化。在单层和多层覆层216中，每个相应的层或它们的组合，可以用来为粉末颗粒212或由其形成的烧结粉末压块提供预定性能。例如，预定性能可以包括：颗粒芯214和覆置材料220之间的金属键的键合强度；颗粒芯214和金属覆层216之间的相互扩散特性，包括多层覆层216的层与层之间的任何相互扩散；多层覆层216的各层之间的相互扩散特性；一种粉末颗粒的金属覆层216与相邻粉末颗粒212的金属覆层之间的相互扩散特性；相邻烧结粉末颗粒212的金属覆层（包括多层覆层的最外层）之间的金属键的键合强度；和覆层216的电化学活性。
金属覆层216和覆置材料220具有熔融温度（TC）。在此所使用的TC包括覆置材料220内部出现初熔或熔化或其他形式的部分熔融时的最低温度，无论覆置材料220是否包括纯金属、均带有不同熔融温度的多相的合金、或复合物，复合物包括含有具有不同熔融温度的多个覆置材料层的复合物。
金属覆置材料220可以包括任何适合的金属覆置材料220，其提供构造成将被烧结到相邻粉末颗粒212上的能够烧结的外表面221，所述相邻粉末颗粒也具有金属覆层216和能够烧结的外表面221。在还包括第二或另外的（覆置或非覆置）颗粒232的粉末210中，在此所述的金属覆层216的能够烧结的外表面221还构造成将被烧结到第二颗粒232的能够烧结的外表面221上。在一个示例性实施例中，粉末颗粒212可在预定烧结温度（TS）烧结，预定烧结温度（TS）是芯材料218和覆置材料220的函数，使得粉末压块400的烧结完全在固态下完成，其中TS小于TP和TC。固态烧结限制了颗粒芯214/金属覆层216的相互作用至固态扩散工艺且限制了金相迁移现象，并限制它们之间形成的交接面的增长，提供对交接面的增长的控制。相反，例如，液相烧结的引入将使颗粒芯214/金属覆层216材料相互快速扩散，使之难以限制它们之间形成的交接面的增长和难以提供对交接面的增长的控制，因而妨碍在此所述的颗粒压块400的所希望的微观结构的形成。
在一个示例性实施例中，芯材料218选择成提供芯化学成分，覆置材料220选择成提供覆置化学成分，这些化学成分还选择成彼此不同。在另一个示例性实施例中，芯材料218选择成提供芯化学成分，覆置材料220选择成提供覆置化学成分，这些化学成分还选择成在它们的交接面彼此不同。覆置材料220和芯材料218的化学成分差别可选择成提供不同的溶解速率，并且提供含有这些化学成分从而使其可选择并可控地溶解的粉末压块400的可选择和可控溶解。这包括响应于井眼中状态改变而不同的溶解速率，所述状态改变包括井眼流体的间接或直接变化。在一个示例性实施例中，由具有制造压块400的芯材料218和覆置材料220的化学成分的粉末210形成的粉末压块400在井眼流体中响应于井眼状态改变而可选择地溶解，井眼状态的改变包括温度变化、压力变化、流量变化、pH变化或井眼流体的化学成分变化，或者它们的组合。响应于所述状态改变的可选择的溶解可由实际化学反应或处理引起，这些化学反应或处理加快了不同的溶解速率，而且还包括与物理反应或处理、例如井眼流体压力或流量的变化相关的溶解响应中的变化。
如图2和4所示，颗粒芯214和芯材料218以及金属覆层216和覆置材料220可以选择成提供粉末颗粒212和粉末210，该粉末构造成用于压实和烧结，以提供轻质（即具有较低的密度）和高强度的粉末压块400，粉末压块可选择并可控地响应于井眼性能变化而从井眼移除，包括在合适的井眼流体中可选择和可控地溶解，所述井眼流体包括在此所公开的各种井眼流体。粉末压块400包括由纳米基体材料420形成的基本上连续的网格纳米基体416，其具有在整个网格纳米基体416分散的多个分散颗粒414。通过压实和烧结多个粉末颗粒212的多个金属覆层216而形成由烧结金属覆层216形成的基本上连续的网格纳米基体416和纳米基体材料420。由于与在此所述的烧结相关的扩散效应，纳米基体材料420的化学成分可能不同于覆置材料220。金属粉末压块400还包括多个分散颗粒414，该分散颗粒包括颗粒芯材料418。当金属覆层216烧结在一起形成纳米基体416时，分散颗粒芯414和芯材料418相应于多个粉末颗粒212的多个颗粒芯214和芯材料218，并由所述多个颗粒芯和芯材料形成。由于与在此所述的烧结相关的扩散效应，芯材料418的化学成分可能不同于芯材料218。
在此所使用的术语基本上连续的网格纳米基体416没有暗示粉末压块的主要组分，而是表示次要组分，无论是按重量计或还是按体积计。这不同于基体包括主要组分（按重量计或按体积计）的大部分基体复合材料。使用的术语“基本上连续的网格纳米基体”用来描述纳米基体材料420在粉末压块400内分布的范围广、规则、连续和互连性质。在此所使用的“基本上连续”描述的是纳米基体材料在整个粉末压块400上范围广，使之基本上在所有分散颗粒414之间延伸并包围几乎所有的分散颗粒414。基本上连续用来表示纳米基体在每个分散颗粒414周围的完全连续性和规则次序不是所必需的。例如，某些粉末颗粒212上，覆层216在颗粒芯214上的缺陷在烧结粉末压块400期间可能导致颗粒芯214的桥接，从而导致在网格纳米基体416内形成局部的不连续，即使在粉末压块的其他部分中纳米基体是基本上连续的并呈现在此所述的结构。在此所使用的“网格”用来表示纳米基体限定了包围并且互连分散颗粒414的纳米基体材料420的基本上重复的、互连的隔室或网格式的网络结构。在此所使用的“纳米基体”用来描述基体的尺寸或规模，尤其是相邻分散颗粒414之间的基体厚度。烧结在一起形成纳米基体的金属覆层本身是纳米级厚度的覆层。由于在除了多于两个的分散颗粒414的交会处之外的大多数部位，纳米基体通常包括两个覆层216与具有纳米级厚度的相邻粉末颗粒212的相互扩散和键合，所形成的基体也具有纳米级厚度（例如，大约为在此所述的覆层厚度的两倍），因而描述为纳米基体。此外，使用的术语分散颗粒414没有暗示粉末压块400的次要组分，而是表示主要组分，无论是按重量计或还是按体积计。使用的术语分散颗粒用来输送粉末压块400内不连续和不连续分布的颗粒芯材料418。
粉末压块400可以具有任何所希望的形状或大小，包括圆柱形坯或杆形形状或尺寸，它们可以以机加工或其他方式来形成有用的制品、包括各种井眼工具和部件。用于形成粉末压块400的烧结和压制工序使包括颗粒芯214和覆层216的粉末颗粒212变形，以提供全密度和所希望的粉末压块400的宏观形状及尺寸以及微观结构。粉末压块400的微观结构包括分散并嵌入在整个烧结覆层的基本上连续的网格纳米基体416中的分散颗粒414的等轴构造。该微观结构有点类似于带有连续晶界相的等轴晶微观结构，除了它不需要使用具有能够生成这样的结构的热力学相平衡性能的合金组分之外。而是，该等轴分散颗粒结构和烧结金属覆层216的网格纳米基体416可以利用热力学相平衡状态不会生成等轴结构的组分生成。分散颗粒414和颗粒层的单元网格416的等轴形态由粉末颗粒212的烧结和变形而随着粉末颗粒被压实，相互扩散，并发生变形而填充颗粒间隔215（图2）时引起。可选择烧结温度和压力来确保粉末压块400的密度基本上完全实现理论密度。
在如图2和4所示的示例性实施例中，分散颗粒414由分散在烧结金属覆层216的网格纳米基体416中的颗粒芯214形成，纳米基体416包括固态金属键417或键合层419，如图5示意性所示的，所述固态金属键或键合层在整个在烧结温度（TS）下形成的网格纳米基体416中的分散颗粒414之间延伸，其中TS小于TC和TP。如图所示，通过在这里所述的用于形成粉末压块400的压实和烧结工序过程中被压缩成轻触接触的相邻粉末颗粒212的覆层216之间的相互固态扩散而以固态形成固态金属键417。同样，网格纳米基体416的烧结覆层216包括固态键合层419，该固态键合层具有由覆层216的覆置材料220的相互扩散程度限定的厚度（t），该相互扩散程度则由覆层216的性质限定，所述性质包括：它们是单一覆层还是多层覆层，它们是否选择成加快或限制这种相互扩散，和在此所述的其他因素，以及烧结和压实状态，包括用于形成粉末压块400的烧结时间、温度和压力。
当形成包括键417和键合层419的纳米基体416时，金属覆层216的化学成分或相分布或者两者可以改变。纳米基体416也具有熔融温度（TM）。在此所使用的TM包括纳米基体416内出现初熔或熔化或其他形式的部分熔融时的最低温度，无论纳米基体材料420是否包括纯金属、均带有不同熔融温度的多相的合金、或复合物，复合物包括具有不同熔融温度的多层各种覆置材料或者它们的组合或者其他。当分散颗粒414和颗粒芯材料418连同纳米基体416一起形成时，金属覆层216的组分也可能扩散到颗粒芯214中，这可能导致颗粒芯214的化学成分或相分布或两者上的变化。结果，分散颗粒414和颗粒芯材料418可具有不同于TP的熔融温度（TDP）。在此所使用的TDP包括分散颗粒214内出现初熔或熔化或其他形式的部分熔融时的最低温度，无论颗粒芯材料218是否包括纯金属、均带有不同熔融温度的多相的合金、或复合物、或者其他。粉末压块400在烧结温度（TS）下形成，其中TS小于TC、TP、TM和TDP。
分散颗粒414可以包括在此所述的用于颗粒芯214的任何材料，即使分散颗粒414的化学成分由于在此所述的扩散效应而有所不同。在一个示例性实施例中，分散颗粒414由颗粒芯214形成，所述颗粒芯包括标准氧化电势大于或等于Zn的材料，包括Mg、Al、Zn、或Mn或它们的组合，也可以包括在此所述的与颗粒芯214结合的这些组分的各种二元、三元和四元合金或其他组合。这些材料中，那些具有包括Mg的分散颗粒414和由在此所述的金属覆置材料216形成的纳米基体416的材料尤其有用。具有Mg、Al、Zn或Mn或它们的组合的分散颗粒414和颗粒芯材料418还可以包括稀土元素或与颗粒芯214结合的在此所述的稀土元素的组合。
在另一个示例性实施例中，分散颗粒414由包括电化学活性比Zn低的金属或非金属材料的颗粒芯214形成。适合的非金属材料包括陶瓷、玻璃（例如，中空玻璃微型球体）或碳或它们的组合。
粉末压块400的分散颗粒414可以具有任何合适的颗粒尺寸，包括在此所述的颗粒芯214的平均颗粒尺寸。
分散颗粒414可以具有任何适合的形状，这取决于选定成用于颗粒芯214和粉末颗粒212的形状以及用来烧结和压实粉末210的方法。在一个示例性实施例中，粉末颗粒212可以是球形的或基本上球形的，分散颗粒414可以包括在此所述的等轴颗粒构造。
分散颗粒414的分散性质可能受所选定的用来制作颗粒压块400的粉末210的影响。在一个示例性实施例中，可以选择具有单峰分布的粉末颗粒212尺寸的粉末210来形成粉末压块220，由此在网格纳米基体416内生成基本上均质、单峰分散颗粒尺寸的分散颗粒414，如图4概括所示的那样。在另一个示例性实施例中，可选择具有多个带有具有相同芯材料218、不同芯尺寸的颗粒芯214和相同覆置材料220的多个粉末颗粒的粉末210，进行在此所述的均匀混合，以提供具有均匀、多峰分布的粉末颗粒212尺寸的粉末210，可以用来形成在网格纳米基体416内具有均质、多峰分散颗粒尺寸的分散颗粒414的粉末压块400。类似地，在又一个示例性实施例中，可选择具有多个可具有相同芯材料218、不同芯尺寸的颗粒芯214和相同覆置材料220的多个粉末210，以非均匀的方式进行分布，以提供非均匀、多峰分布的粉末颗粒尺寸，可以用来形成在网格纳米基体416内具有非均质的、多峰分散颗粒尺寸的分散颗粒414的粉末压块400。颗粒芯尺寸分布的选择可用来确定例如由粉末210制成的粉末压块400的网格纳米基体416内的分散颗粒414的颗粒尺寸和颗粒间隔。
纳米基体416为彼此烧结的金属覆层216的基本上连续的单元网格。纳米基体416的厚度取决于用于形成粉末压块400的粉末210的性质以及任何第二粉末230的结合，尤其是与这些颗粒有关的覆层的厚度。在一个示例性实施例中，纳米基体416的厚度在整个粉末压块400的微观结构上都是基本上均匀的，并包括粉末颗粒212的覆层216的厚度的大约两倍。在另一个示例性实施例中，单元网格416在分散颗粒414之间具有基本上均匀的平均厚度，大约为50nm到5000nm。
通过在此所述的键合层419的形成和相互扩散，纳米基体416通过彼此烧结相邻颗粒的金属覆层216而形成。金属覆层216可以为单层或更多层结构，它们可以选择成加快或防止或加快和防止金属覆层216层内或金属覆层216的层间或金属覆层216与颗粒芯214之间或金属覆层216与相邻粉末颗粒的金属覆层216之间的扩散，可以限制或扩大烧结期间金属覆层216的相互扩散程度，这取决于覆置厚度、所选择的覆置材料、烧结条件及其他因素。给定这些组分的相互扩散和相互作用的潜在复杂性，所形成的纳米基体416和纳米基体材料420的化学成分的描述仅仅理解为覆层216组分的组合，该覆层组分还可以包括分散颗粒414的一种或更多种组分，这取决于相互扩散的程度，如果有，所述相互扩散出现在分散颗粒414与纳米基体416之间。类似地，分散颗粒414和颗粒芯材料418的化学成分仅仅理解为颗粒芯214组分的组合，该颗粒芯组分还可以包括纳米基体416和纳米基体材料420的一种或更多种组分，这取决于相互扩散的程度，如果有，所述相互扩散出现在分散颗粒414与纳米基体416之间。
在一个示例性实施例中，纳米基体材料420具有化学成分，颗粒芯材料418具有不同于纳米基体材料420的化学成分，所述化学成分上的差别可以构造成：响应于紧邻压块400的井眼的性能或状态的受控变化（包括与粉末压块400接触的井眼流体的性能变化），提供可选择的和可控的溶解速率，包括可选择的从极低溶解速率到很快溶解速率的转变，正如本申请中所述的那样。纳米基体416可以由具有单层和多层覆层216的粉末颗粒212形成。这种设计灵活地提供了很多的材料组合，尤其是就多层覆层216来说，可利用这些材料组合，通过控制覆层给定层内以及覆层216与相关颗粒芯214或相邻粉末颗粒212的覆层216之间的组分的相互作用，来定制网格纳米基体416和纳米基体材料420的成分。下文提供了一些展现该灵活性的示例性实施例。
如图5所示，在一示例性实施例中，粉末压块400由其中覆层216包括单个层的粉末颗粒212形成，多个分散颗粒414中相邻分散颗粒之间形成的纳米基体416包括一个粉末颗粒212的单个金属覆层216、键合层419和相邻粉末颗粒212中的另一个的单个覆层216。键合层419的厚度（t）由这些单个金属覆层216之间的相互扩散程度确定，可以包围纳米基体416的整个厚度或仅仅一部分。在使用单层粉末210形成的粉末压块400的一个示例性实施例中，粉末压块400可以包括分散颗粒414，该分散颗粒包括Mg、Al、Zn、或Mn或它们的组合，正如在此所述的那样，纳米基体416可以包括Al、Zn、Mn、Mg、Mo、W、Cu、Fe、Si、Ca、Co、Ta、Re或Ni、或它们的氧化物、碳化物或氮化物、或者上述材料的任意组合，包括这样的组合：其中网格纳米基体416（包括键合层419）的纳米基体材料420具有一化学成分，而分散颗粒414的芯材料418具有不同于纳米基体材料416的化学成分。纳米基体材料420和芯材料418在化学成分上的差别可用来响应于井眼性能、包括井眼流体的变化而提供可选择和可控的溶解，正如在此所述的。在粉末压块400由具有单个覆层构造的粉末210形成的另一示例性实施例中，分散颗粒414包括Mg、Al、Zn、或Mn或它们的组合，网格纳米基体416包括Al或Ni或它们的组合。
如图6所示，在另一个示例性实施例中，粉末压块400由其中覆层216包括具有多个覆层的多层覆层216的粉末颗粒212形成，多个分散颗粒414中相邻分散颗粒之间形成的纳米基体416包括多个层（t），所述多个层包括一个颗粒212的覆层216、键合层419，所述多个层还包括另一个粉末颗粒212的覆层216。在图6中，这以双层金属覆层216加以说明，但是，应该明白，多层金属覆层216的多个层可以包括任何所希望的数量的层。键合层419的厚度（t）也由相应覆层216的多个层之间的相互扩散程度确定,其可以包含纳米基体416的整个厚度或仅仅一部分。在该实施例中，包括各个覆层216的多个层可以用来控制键合层419的相互扩散和形成以及厚度（t）。
烧结和锻造的粉末压块400包括分散颗粒414和纳米基体416，分散颗粒414包括Mg，纳米基体416包括在此所述的各种纳米基体材料，粉末压块400已经呈现出机械强度和低密度的良好组合，举例说明了在此所公开的轻质、高强度材料。例如，示例性的粉末压块400具有纯Mg分散颗粒414和各种纳米基体416，纳米基体由具有纯Mg颗粒芯214和各种单层以及多层金属覆层216的粉末210形成，所述各种单层以及多层金属覆层包括Al、Ni、W、或Al2O3或它们的组合。这些粉末压块400经受各种各样的机械测试及其他测试，包括密度测试，它们的溶解和机械性能退化行为表征为在此所公开的内容。结果表明，这些材料可构造成提供从极低腐蚀速率到极高腐蚀速率的大范围可选择的和可控的腐蚀或溶解行为，尤其是腐蚀速率比那些不含有网格纳米基体的粉末压块既低又高，例如由纯Mg粉末通过同样的压制和烧结工序形成的压块，与在这里所述的各种网格纳米基体中包括纯Mg分散颗粒的那些相比。与由不包括这里所述的纳米级覆置的纯Mg颗粒形成的粉末压块相比，这些粉末压块200还可以构造成提供显著提高的性能。包括具有Mg的分散颗粒414和具有这里所述的各种纳米基体材料420的纳米基体416的粉末压块400表现出其室温压缩强度至少为大约37ksi，且通过烘干和在200℉的3%KCl溶液中浸泡，进一步表现室温压缩强度超过大约50ksi。相反，由纯Mg粉末形成的粉末压块的压缩强度大约为20ksi或更小。通过优化粉末210，尤其是用于形成网格纳米基体416的纳米级金属覆层16的重量百分比，可进一步改善纳米基体金属粉末压块400的强度。通过优化粉末210，尤其是用于形成网格纳米基体416的纳米级金属覆层216的重量百分比，可进一步改善纳米基体金属粉末压块400的强度。例如，改变由包括在纯Mg颗粒芯214上的多层（Al/Al2O3/Al）金属覆层216的覆置粉末颗粒212形成的网格纳米基体416内的矾土覆层的重量百分比（wt.%），即厚度，可提供21%的增加（与重量百分比为0%矾土的情况相比）。
包括具有Mg的分散颗粒414和具有这里所述的各种纳米基体材料的纳米基体416的粉末压块400还表现出其室温剪切强度至少为大约20ksi。这与由纯Mg粉末形成的粉末压块大不相同，由纯Mg粉末形成的粉末压块的室温剪切强度大约为8ksi。
这里披露的类型的粉末压块400能够实现实际密度基本上等于基于粉末210的成分、包括颗粒芯214和金属覆层216的组分的相对量的密实材料的预定理论密度，并且这里还描述为完全致密的粉末压块。包括具有Mg的分散颗粒414和具有这里所述的各种纳米基体材料的纳米基体416的粉末压块400表现出其实际密度为大约1.738g/cm3到大约2.50g/cm3，其基本上等于预定的理论密度，与预定理论密度相差最多4%。
在此披露的粉末压块400可构造成响应于井眼状态改变而在井眼流体中可选择地和可控地溶解。可以利用以提供可选择的和可控的溶解的改变状态的例子包括，温度变化、压力变化、流量变化、pH变化或井眼流体的化学成分变化，或者它们的组合。包括温度变化的改变状态的例子包括井眼流体温度变化。例如，与200℉下范围从大约1mg/cm2/hr到246mg/cm2/hr的较高腐蚀速率相比，包括具有Mg的分散颗粒414和具有这里所述的各种纳米基体材料的纳米基体416的粉末压块400在室温下的3%KCl溶液中具有较低的腐蚀速率，其范围从大约0到11mg/cm2/hr，其中的变动取决于不同的纳米级覆层216。包括化学成分变化的状态改变的例子包括井眼流体的氯离子浓度变化或pH值变化，或两者变化。例如，包括具有Mg的分散颗粒414和具有这里所述的各种纳米级覆层的纳米基体416的粉末压块400表现出在15%HCl中的腐蚀速率范围从大约4750mg/cm2/hr到大约7432mg/cm2/hr。因而，响应于井眼状态改变、即井眼流体化学成分从KCl到HCl变化的可选择的和可控的溶解可用来实现如图7曲线示出的特性响应，图7示出了，在选定的预定关键服务时间（CST），状态改变可以施加在粉末压块400上，就好像应用于某一给定应用一样，例如井眼环境，这导致粉末压块400的性能响应于所应用的环境的状态改变而可控地变化。例如，在一预定关键服务时间，从第一流体（例如KCl）到第二井眼流体（例如HCl），改变与粉末压块400相接触的井眼流体，所述第一流体提供第一腐蚀速率和相关的随时间变化的重量损失或强度，第二井眼流体提供第二腐蚀速率和相关的随时间变化的重量损失和强度，其中与第一流体相关的腐蚀速率比与第二流体相关的腐蚀速率小得多。这种对井眼流体状态变化的特性响应可用于例如使关键服务时间与特定应用所需的尺寸损耗极限或最低强度相联合，这样，当由这里所述的粉末压块400形成的井眼工具或部件不再需要在井眼中运行时（例如CST），可改变井眼状态（例如，井眼流体的氯离子浓度），以使粉末压块400快速溶解，并从井眼移除。在上述的例子中，粉末压块400的可选择溶解速率范围为从大约0到7000mg/cm2/hr。该响应范围能够提供例如在少于1小时的时间内通过改变井眼流体而从井眼移除由该材料形成的3英寸直径的球的能力。上述可选择的和可控的溶解性行为与这里所述的最佳强度和低密度性能一起，定义了一种新的工程分散颗粒-纳米基体材料，其构造成与流体相接触，并构造成从下列之一的可选择的和可控的转变：从第一强度状态到第二强度状态，第二强度状态低于一功能强度阈值；或者从第一重量损失量到第二重量损失量，第二重量损失量大于一重量损失极限，这些都是与流体接触的时间的函数。这里所述的粉末压块400以分散颗粒-纳米基体合成物为特征，其包括：具有纳米基体材料420的网格纳米基体416、具有分散在基体内的颗粒芯材料418的多个分散颗粒414。纳米基体416的特征在于固态键合层419，其在整个纳米基体上延伸。上述的与流体接触的时间可包括上述的CST。CST可包括溶解与流体相接触的粉末压块400的预定部分所希望或所需要的预定时间。CST还可以包括与工程材料或流体或两者组合的性能的改变相应的时间。就工程材料性能改变来说，该改变可包括工程材料温度变化。在存在流体性能变化的情况下，改变可包括流体温度、压力、流量、化学成分、pH或它们的组合的变化。工程材料以及工程材料或流体性能的变化或者它们的组合可以定制成提供所希望的CST响应特性，包括在CST之前（例如，阶段1）和CST之后（例如，阶段2）的特定性能（例如，重量损失、强度损失）的变化速率，如图7所示。
由于没有理论限制，粉末压块400由覆置粉末颗粒212形成，所述覆置粉末颗粒包括颗粒芯214和相关的芯材料218以及金属覆层216和相关金属覆置材料220，以形成基本上连续的三维网格纳米基体216，所述纳米基体包括纳米基体材料420，该纳米基体材料通过包括具有颗粒芯材料418的多个分散颗粒414的相应覆层216的烧结和相关扩散键合而形成。这种独特结构可包括通过具有相同相对量的组分材料的熔融凝固难以形成或不可能形成的亚稳态材料组合。覆层和相关覆置材料可选择成在预定流体环境提供可选择的和可控的溶解，例如在井眼环境中，其中，预定流体可以是通常使用的注入到井眼中的流体或者从井眼中抽出的井眼流体。从这里的说明书可以进一步明白，纳米基体的可控溶解暴露了芯材料的分散颗粒。颗粒芯材料也可以选择成在井眼流体中也提供可选择的和可控的溶解。作为选择，它们也可以选择成为粉末压块400提供特定机械性能，例如压缩强度或剪切强度，没有必要提供芯材料本身的可选择的和可控的溶解，因为围绕这些颗粒的纳米基体材料的可选择的和可控的溶解必定释放它们，这样，使它们被井眼流体带走。可选择成提供加强相材料的基本上连续的网格纳米基体416和可选择成提供等轴分散颗粒414的分散颗粒414的微观结构形态为这些粉末压块提供了增强的机械性能，包括压缩强度和剪切强度，因为可以操纵所形成的纳米基体/分散颗粒的形态，以通过类似于传统加强机构的处理，例如粒度减少、利用不纯原子的溶液硬化、沉淀或老化变硬和强度/工件（work）硬化机构进行加强。纳米基体/分散颗粒结构趋向于借助于众多颗粒纳米基体交接面以及在此所述的纳米基体材料内的离散层之间的交接面限制脱位（dislocation）运动。这已在这些材料的断裂行为进行了举例说明。利用无覆置的纯Mg粉末制成的粉末压块400受到足以诱导表现晶间断裂的失效的剪切应力的作用。相反，利用具有纯Mg粉末颗粒芯214以形成分散颗粒414的粉末颗粒212和包括Al以形成纳米基体416的金属覆层216制成的粉末压块400受到足以诱导表现穿晶断裂的失效的剪切应力以及这里所述的基本上较高的断裂应力的作用。因为这些材料具有高强度特性，所以芯材料和覆置材料可选择成利用低密度材料或其它低密度材料，例如低密度金属、陶瓷、玻璃或碳，否则不会提供供所希望的应用、包括井眼工具和部件的所必需的强度特性。
插塞16使装置10的外壳12能够保持与制造该装置的操作相关的适量的流体压力。在一个实施例中，插塞16构造成保持与封隔器（未显示）的设定操作相关的高压力。
在使用时，以及为了说明起见，通过使用包括封隔器设定操作、破碎操作和开采的示例性作业顺序，将这里披露的装置下到井孔中。虽然现有的装置是在阀18处于关闭位置的情况下放，但是，本装置是在一个或更多个阀18处于开启位置的情况下放。因为插塞16防止通过一个或更多个开口14的流体运动，所以，利用用于设定的压力的操作，例如所述的封隔器设定操作，可以在装置10已在开启位置的情况下进行。这转化为消除了在完成封隔器设定操作之后将阀18转换到开启位置的下放，而该下放在现有技术中是必须的。在该例子中，第二个所述的操作是破碎操作。对于这种操作，一个或更多个开口14必须是本专利的那种（patent），阀18必须处于这样的位置，该位置允许流体压力在油管和环空之间传送，以将油管压力传送至地层进行破裂。由于在引入的示例性方案中，阀18已经打开，所以必须没有机械干涉。而是，必须做的只是减小插塞16。在所构思的材料的所有情况下，无论是对井眼流体的暴露时间，还是试剂、例如酸的特定应用，都是插塞16减小和/或溶解的前身，最终的结果都是插塞16不再成为到达地层的油管压力的障碍。这样，更便于破碎操作，不需要单独的机械干涉下放。在该示例性实施例的破碎操作之后，可预期通过油管进行开采。如果外壳12留有开口，这通过管柱不会明显地支撑开采。为了弥补该情形，要进行机械干涉下放，阀18关闭。虽然所述的实施例的确使用了单独的下放，但是，其运用的只是一个单独的下放，不是现有技术的两次单独的下放，现有技术利用两次下放实现示例性方案的目标。
本领域技术人员应当意识到，单次下放可能价值几十万美元。所以一次下放的消除显著有益于本领域。
在下列方法中采用该装置：用于执行一系列井下操作，通过允许该装置至目标深度而减少机械干涉下放次数，用于执行井下操作，例如对管柱增压以实现封隔器设定；至少插塞16对井下流体（天然或引入的）的暴露和使溶解流体（例如但不限于酸）移动至至少所述插塞16以减小或消除插塞16中的一个或更多个；对管柱增压以实现另外的井下操作，所述另外的井下操作涉及管柱的环空；使机械干涉工具下放至目标深度，关闭一个或更多个阀18，从而为管柱准备另一个操作，该另一个操作不涉及油管压力至环空的传送。
虽然已经显示和描述了一个或更多个实施例，但是，在没有背离本发明的精神和范围的情况下，可以对此进行许多修改和替换。因此，应当理解，本发明是通过说明和非限制的方式描述的。
Claims (10)
1.一种流量控制装置，其包括：
其中限定一个或更多个开口的外壳；
能够与外壳中的所述一个或更多个开口对准和不对准的阀结构；和
一个或更多个插塞，在所述一个或更多个开口中的至少一个开口中布置一个插塞，各个插塞通过暴露于井下流体和所施加的溶解流体中的一种或更多种而能够被溶解，其中，所述一个或更多个插塞包括：基本上连续的网格纳米基体，该网格纳米基体包括纳米基体材料；多个分散颗粒，所述分散颗粒包括分散在网格纳米基体中的颗粒芯材料，所述颗粒芯材料包括Mg、Al、Zn、或Mn、或它们的组合；和在整个网格纳米基体上在分散颗粒之间延伸的固态键合层。
2.如权利要求1所述的流量控制装置，其中，阀结构为滑动套筒。
3.如权利要求1所述的流量控制装置，其中，阀结构包括一个或更多个端口。
4.如权利要求1所述的流量控制装置，其中，一个或更多个插塞包括在暴露于井下天然流体时能够减小的材料。
5.如权利要求1所述的流量控制装置，其中，一个或更多个插塞包括在暴露于引入的井下流体时能够减小的材料。
6.如权利要求5所述的流量控制装置，其中，引入的井下流体包括酸。
7.一种用于以次数减少的机械干涉下放而执行一系列井下操作的方法，其包括：
将权利要求1所述的装置下放至目标深度；
进行外壳的径向流体渗透性需要受到限制的第一井下操作；
溶解插塞；
执行需要流体压力穿过所述一个或更多个开口进行连通的第二井下操作；和
机械干涉以关闭阀结构，从而使该装置的所述一个或更多个开口径向不渗透。
8.如权利要求7所述的方法，其中，执行外壳的径向流动受限制的第一井下操作为设定封隔器。
9.如权利要求7所述的方法，其中，执行需要流体压力穿过所述一个或更多个开口进行连通的第二井下操作为进行破碎。
10.如权利要求7所述的方法，其中，所述阀结构为滑动套筒，所述机械干涉为使该滑动套筒位移。
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| US20110214881A1 (en) | 2011-09-08 |
| US8424610B2 (en) | 2013-04-23 |
| EP2542754A2 (en) | 2013-01-09 |
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| BR112012022367A2 (pt) | 2016-07-05 |
| CA2791719A1 (en) | 2011-09-09 |
| EP2542754B1 (en) | 2018-05-02 |
| RU2012142229A (ru) | 2014-04-10 |
| SG183912A1 (en) | 2012-10-30 |
| CN102782246A (zh) | 2012-11-14 |
| EP2542754A4 (en) | 2015-03-04 |
| AU2011223595A1 (en) | 2012-09-13 |
| WO2011109616A2 (en) | 2011-09-09 |
| RU2585773C2 (ru) | 2016-06-10 |
| BR112012022367B1 (pt) | 2020-01-14 |
| WO2011109616A3 (en) | 2011-10-27 |
| NO2542754T3 (zh) | 2018-09-29 |
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