CN102759669A - Experimental method of nanometer size effects of analytical device operation window and phase-change material - Google Patents
Experimental method of nanometer size effects of analytical device operation window and phase-change material Download PDFInfo
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Abstract
The invention discloses an experimental method of nanometer size effects of an analytical device operation window and a phase-change material. The study of an inventor finds that a resistance value difference between high resistance and low resistance of the phase-change material occupies 4 to 5 orders of magnitude, but a resistance value difference between a high resistance state and a low resistance state of a storage unit prepared by utilizing the phase-change material occupies 2 to 3 orders of magnitude. According to the experimental method, through preparing test samples of different sizes, including phase-change material layers of different thicknesses and upper electrodes of different sizes and testing electrical and storage performance comprising current-voltage (IV) characteristics, reversible transition characteristics under pulse operation, and the like, accurate and reliable experimental data for studying a law between a nanometer size effect of the phase-change material and the device operation window is provided; and through using the experimental data, reasons causing differences between the high resistance values and the low resistance values of the phase-change material and the device operation window can be further studied, and then the nanometer size effects in the analytical device operation window and the phase-change material and carrier behaviors under a nanoscale can be analyzed.
Description
Technical field
The present invention relates to the material and the structure of phase transition storage, refer in particular to a kind of experimental technique that is used for analysis device action pane and phase-change material nanometer size effect, belong to particular device and technology field in the microelectronics.
Background technology
In present novel memory technology; It is low to have a cost based on the phase transition storage (PCRAM) of sulphur based semiconductor material; Speed is fast; Storage density is high, make simple and with the current good outstanding advantage of CMOS (complementary metal-oxide-semiconductor) ic process compatibility property, receive worldwide extensive concern.The reliability that reduces electric current and power consumption, raising data confining force and phase-change material is one of present topmost research direction; Each major company of the whole world has dropped into the research ranks of phase transition storage in succession, and there are Ovonyx, Intel, Samsung, IBM, Bayer, ST Micron, AMD, Panasonic, Sony, Philips, British Areospace, Hitachi and Macronix etc. in main research unit.
Reducing power consumption, raising data confining force and reliability can improve from material and two aspects of device architecture.Wherein, The improvement method of device architecture aspect also is diversified, and the structure of phase transition storage roughly is divided into classics " mushroom-shaped " structure, μ-Trench structure, Pore structure, GST limiting structure, edge contact structure, quantum line structure, GST sidewall structure etc.The structural key of classical T-shape is the preparation method of bottom heating electrode, and reducing and can only realizing through the method for dwindling bottom electrode of the operating area of this kind structure reduces operating voltage and the purpose that reduces power consumption thereby reach.The purpose of various structures all is in order to reduce the contact area of electrode and phase-change material, thereby realizes the reducing of reversible transition zone of set and reset, and reaches the purpose of reduction electric current and power consumption.The reducing of phase change region presents tangible linear relationship with the reduction of operating current; The method that reduces the phase transformation operating area roughly has two kinds; Be respectively size that reduces phase-change material and the size that reduces heating electrode; Through the medium transition bed between electrode and phase-change material, the heat diffusion that effectively stops the reversible transition process also is to realize the effective way of low pressure, low-power consumption simultaneously.
In addition; Along with phase change memory technology and CMOS technology towards developing below the 45nm, press for the Changing Pattern of the storage unit studying phase-change material itself and constitute by phase-change material phase-change material and device operation window under the electricity under the nanoscale and storage properties, nanometer size effect, nanoscale.
Summary of the invention
The technical matters that the present invention mainly solves is to provide the experimental technique of analysis device action pane and phase-change material nanometer size effect.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
The experimental technique of a kind of analysis device action pane and phase-change material nanometer size effect comprises the steps:
(1) on the identical Semiconductor substrate of multi-disc, prepares dielectric layer respectively, on dielectric layer, prepare lower electrode layer again, on each lower electrode layer, prepare the phase-change material layers of different-thickness then respectively;
(2) on each phase-change material layers, prepare upper electrode layer respectively;
(3) utilize optical lithography processes that each upper electrode layer is etched into the top electrode of a plurality of different sizes, top electrode is of a size of 500nm-10000nm; Thereby obtain a plurality of specimen, wherein, each specimen has the top electrode of same lower electrode layer and a plurality of different sizes, and each specimen has the phase-change material layers of different-thickness;
(4) lower electrode layer that utilizes nano-probe to visit respectively to touch specimen and the top electrode of its a plurality of different sizes; Carry out the test of electricity and memory property; Obtain the corresponding electricity and the memory property test data of phase-change material layers of the top electrode and the different-thickness of different size, thus pass test data analysis nanometer size effect wherein.
As the preferred version of this experimental technique, the material of said lower electrode layer or top electrode adopts one or more among Al, Cu, W, TiW, TiN, the TiAlN.
As the preferred version of this experimental technique, said phase-change material layers adopts the phase-change material of Ge-Sb-Te base system row, Ge-Te base system row or Si base system row.
As the preferred version of this experimental technique, the thickness that said phase-change material layers is selected for use is 50-200nm.
As the preferred version of this experimental technique, the test of said electricity and memory property comprise I-V test, SET test, RESET test and pulse current or voltage-operated under the reversible transition characteristic.
The experimental technique of another kind of analysis device action pane and phase-change material nanometer size effect comprises the steps:
(1) on the identical Semiconductor substrate of multi-disc, prepares dielectric layer respectively, on dielectric layer, prepare lower electrode layer again, on each lower electrode layer, prepare the phase-change material layers of different-thickness then respectively;
(2) on each phase-change material layers, prepare upper electrode layer respectively;
(3) utilize beamwriter lithography technology each upper electrode layer to be etched into the top electrode of a plurality of different sizes; Top electrode is of a size of 20nm-200nm; Thereby obtain a plurality of specimen; Wherein, each specimen has the top electrode of same lower electrode layer and a series of different sizes, and has the phase-change material layers of different-thickness;
(4) utilize FIB (FIB) technology depositing metal lead-in wire on each top electrode; And respectively metal lead wire is connected on the test electrode; Carry out the test of electricity and memory property; Obtain the corresponding electricity and the memory property test data of phase-change material layers of the top electrode and the different-thickness of different size, thus pass test data analysis nanometer size effect wherein.
As the preferred version of this experimental technique, the material of said lower electrode layer or top electrode adopts one or more among Al, Cu, W, TiW, TiN, the TiAlN.
As the preferred version of this experimental technique, said phase-change material layers adopts the phase-change material of Ge-Sb-Te base system row, Ge-Te base system row or Si base system row.
As the preferred version of this experimental technique, the thickness that said phase-change material layers is selected for use is 50-200nm.
As the preferred version of this experimental technique, the test of said electricity and memory property comprise I-V test, SET test, RESET test and pulse current or voltage-operated under the reversible transition characteristic.
Beneficial effect of the present invention is:
Inventor of the present invention discovers that high resistant, the resistance between the low-resistance of phase-change material differ 4-5 magnitude; And utilize high-impedance state and the resistance of low resistance state of the storage unit of this phase-change material preparation to differ 2-3 magnitude; Therefore; The present invention proposes the experimental technique of above-mentioned analysis device action pane and phase-change material nanometer size effect; The electricity and the memory property that under the device operation window of different size, (promptly adopt the top electrode of different size) through systematically comparative analysis phase change material stores of this experimental technique unit; Thereby, can further study the phase-change material reason different through the above-mentioned electricity of comparative analysis and the experimental data of storage characteristics and belong to, and then analysis nanometer size effect and the charge carrier behavior under the nanoscale wherein with the high low resistance of device operation window for nanometer size effect and the rule between the device operation window of research phase-change material provides experimental data accurately and reliably; Help improving the performance of phase-change memory cell; As improve device operation speed, reduce operating current etc., for the exploitation of phase transition storage of new generation is taken a firm foundation.
Description of drawings
Fig. 1-3 is the schematic flow sheet of experimental technique among the embodiment one;
Fig. 4 is for carrying out the R-T curve of resistance-temperature test gained among the embodiment one to the Si-Sb-Te material;
Fig. 5 is for carrying out SET and RESET test, the curve that obtains to the device cell based on the Si-Sb-Te material among the embodiment one under different impulsive conditions.
Embodiment
Specify the preferred embodiments of the present invention below in conjunction with accompanying drawing.
Embodiment one
Present embodiment provides a kind of experimental technique that is used for analysis device action pane and GeSbTe phase-change material nanometer size effect, and referring to Fig. 1-3, the key step of this experimental technique is following:
(1) on the identical Semiconductor substrate of multi-disc, prepares dielectric layer respectively, on dielectric layer, prepare lower electrode layer again.Used Semiconductor substrate is unrestricted, can be the Si substrate of using always, also can be that SOI substrate or other semiconductor material are as substrate; Dielectric layer can be SiO
2Medium; The material of lower electrode layer is unrestricted; It can be conductor material commonly used such as Al, Cu, W; Also can be other conductive material, like TiW, TiN, TiAlN etc., even can be again on common conductor material such as W heating material such as TiW, the TiAlN etc. of the high resistivity of the several nanometer thickness of deposition one deck; Thereby the raising heats reduces operating current.Wherein the thickness of lower electrode layer is preferably 200-400nm.Then, on each lower electrode layer, prepare the GeSbTe phase-change material layers of different-thickness respectively, the thickness that said phase-change material layers is selected for use is 50-200nm.
For example; Prepare 5 specimen; Can get 5 identical Semiconductor substrate and prepare lower electrode layer, adopt methods such as magnetron sputtering on each lower electrode layer, to prepare the GeSbTe phase-change material layers that thickness is 20nm, 50nm, 100nm, 150nm, 200nm respectively then.
Between phase-change material layers and lower electrode layer, can add one deck nitride material such as SiN, SiON etc. or oxide material such as Ta
2O
5, Al
2O
3, ZrO
2Deng, can prevent the diffusion of phase-change material effectively, strengthen the adhesion of phase-change material, improve the heats and the reliability of phase-change material.
(2) on each phase-change material layers, prepare upper electrode layer respectively, the material of said upper electrode layer adopts one or more among Al, W, TiW, TiN, the TiAlN, and the upper electrode layer of present embodiment adopts W film; Obtain structure as shown in Figure 1; Wherein 1 is Semiconductor substrate, the 2nd, and dielectric layer, the 3rd, lower electrode layer; The 4th, phase-change material layers, the 5th, upper electrode layer.
(3) utilize optical lithography processes that each upper electrode layer 5 is etched into the top electrode 6 of a series of different sizes, top electrode 6 is of a size of 500nm-10000nm, for example; Can each upper electrode layer 5 be etched into size and be respectively 500nm, 1000nm, 2000nm; 5000nm, 5 top electrodes 6 of 10000nm.Thereby obtain a plurality of specimen, as shown in Figure 2, wherein, each specimen has the top electrode 6 of same lower electrode layer 3 and a series of different sizes, and each specimen has the phase-change material layers 4 of different-thickness.
(4) as shown in Figure 3; The lower electrode layer 3 that utilizes nano-probe 7 to visit respectively to touch specimen and the top electrode 6 of its a plurality of different sizes; Carry out the test of electricity and memory property; Comprise I-V test, SET test, RESET test and pulse current or voltage-operated following reversible transition characteristic, obtain the electricity and the memory property test data of phase-change material layers 4 correspondences of top electrode 6 and the different-thickness of different size, thus pass test data analysis nanometer size effect wherein.
For example, to the Si-Sb-Te material of certain component, see shown in Figure 4ly through the R-T curve of resistance-temperature test (R-T test) gained, the resistance of high-impedance state and low resistance state differs 5 magnitudes; Utilized the CMOS prepared based on the device cell of this Si-Sb-Te material, under different impulsive conditions, this unit has been carried out SET and RESET test, the curve that obtains is seen shown in Figure 5, and the resistance of high-impedance state and low resistance state differs less than 3 magnitudes.
It is thus clear that; This experimental technique provides experimental data accurately and reliably for the nanometer size effect and the rule between the device operation window of research phase-change material; Can further study the phase-change material reason place different through the above-mentioned electricity of comparative analysis and the experimental data of storage characteristics with the high low resistance of device operation window; And then analyze nanometer size effect and the charge carrier behavior under the nanoscale wherein, help improving the performance of phase-change memory cell.
Embodiment two
Present embodiment provides the experimental technique of another kind of analysis device action pane and GeSbTe phase-change material nanometer size effect; Be used for the analytically littler situation of electrode size; This method and embodiment one are similar, so at this extra accompanying drawing is not provided, its key step is following:
(1) on the identical Semiconductor substrate of multi-disc, prepares dielectric layer respectively, on dielectric layer, prepare lower electrode layer again.Used Semiconductor substrate is unrestricted, can be the Si substrate of using always, also can be that SOI substrate or other semiconductor material are as substrate; Dielectric layer can be SiO
2Medium; The material of lower electrode layer is unrestricted; It can be conductor material commonly used such as Al, Cu, W; Also can be other conductive material, like TiW, TiN, TiAlN etc., even can be again on common conductor material such as W heating material such as TiW, the TiAlN etc. of the high resistivity of the several nanometer thickness of deposition one deck; Thereby the raising heats reduces operating current.Wherein the thickness of lower electrode layer is preferably 200-400nm.Then, on each lower electrode layer, prepare the GeSbTe phase-change material layers of different-thickness respectively, the thickness that said phase-change material layers is selected for use is 50-200nm.
Between phase-change material layers and lower electrode layer, can add one deck nitride material such as SiN, SiON etc. or oxide material such as Ta
2O
5, Al
2O
3, ZrO
2Deng, can prevent the diffusion of phase-change material effectively, strengthen the adhesion of phase-change material, improve the heats and the reliability of phase-change material.
(2) on each phase-change material layers, prepare upper electrode layer respectively, the material of said upper electrode layer adopts one or more among Al, W, TiW, TiN, the TiAlN, and the upper electrode layer of present embodiment adopts W film; The thickness of upper electrode layer is preferably 50-200nm, and present embodiment adopts 100nm.
(3) utilize beamwriter lithography technology that each upper electrode layer is etched into the top electrode of a plurality of different sizes, top electrode is of a size of 20nm-200nm, for example; Can each upper electrode layer be etched into size and be respectively 20nm, 50nm, 100nm; 150nm, 5 top electrodes of 200nm.Thereby obtain a plurality of specimen, wherein, each specimen has the top electrode of same lower electrode layer and a series of different sizes, and each specimen has the phase-change material layers of different-thickness.Compare with embodiment one, adopt beamwriter lithography technology can obtain the top electrode of smaller szie.
(4) because the top electrode size is all smaller; FIB capable of using (Focused Ion beam; FIB) technology depositing metal lead-in wire on each top electrode; And respectively metal lead wire is connected on the test electrode, carry out the test of electricity and memory property, comprise I-V test, SET test, RESET test and pulse current or voltage-operated under the reversible transition characteristic; Obtain the corresponding electricity and the memory property test data of phase-change material layers of the top electrode and the different-thickness of different size, thus pass test data analysis nanometer size effect wherein.
Embodiment three
Change the phase-change material GeSbTe among the embodiment one into SiSbTe, perhaps change the SiSbTe that GeSbTe that Sn, Ag, N etc. mix and Sn, Ag, N etc. mix into, other step is with embodiment one.Can obtain other Ge-Sb-Te base systems row, Ge-Te base system row or Si base system row phase change material stores unit electricity and the experimental data of memory property under the device operation window of different size like this; Thereby can obtain the better device of some aspect performance, like the operating current that reduces device or improve device speed etc.
Here description of the invention and application is illustrative, is not to want with scope restriction of the present invention in the above-described embodiments.Here the distortion of the embodiment that is disclosed and change are possible, and the replacement of embodiment is known with the various parts of equivalence for those those of ordinary skill in the art.Those skilled in the art are noted that under the situation that does not break away from spirit of the present invention or essential characteristic, and the present invention can be with other forms, structure, layout, ratio, and realize with other substrates, material and parts.Under the situation that does not break away from the scope of the invention and spirit, can carry out other distortion and change here to the embodiment that is disclosed.
Claims (10)
1. the experimental technique of analysis device action pane and phase-change material nanometer size effect is characterized in that, comprises the steps:
(1) on the identical Semiconductor substrate of multi-disc, prepares dielectric layer respectively, on dielectric layer, prepare lower electrode layer again, on each lower electrode layer, prepare the phase-change material layers of different-thickness then respectively;
(2) on each phase-change material layers, prepare upper electrode layer respectively;
(3) utilize optical lithography processes that each upper electrode layer is etched into the top electrode of a plurality of different sizes, top electrode is of a size of 500nm-10000nm; Thereby obtain a plurality of specimen, wherein, each specimen has the top electrode of same lower electrode layer and a plurality of different sizes, and each specimen has the phase-change material layers of different-thickness;
(4) lower electrode layer that utilizes nano-probe to visit respectively to touch specimen and the top electrode of its a plurality of different sizes; Carry out the test of electricity and memory property; Obtain the corresponding electricity and the memory property test data of phase-change material layers of the top electrode and the different-thickness of different size, thus pass test data analysis nanometer size effect wherein.
2. the experimental technique of analysis device action pane according to claim 1 and phase-change material nanometer size effect is characterized in that: the material of said lower electrode layer or upper electrode layer adopts one or more among Al, Cu, W, TiW, TiN, the TiAlN.
3. the experimental technique of analysis device action pane according to claim 1 and phase-change material nanometer size effect is characterized in that: said phase-change material layers adopts the phase-change material of Ge-Sb-Te base system row, Ge-Te base system row or Si base system row.
4. the experimental technique of analysis device action pane according to claim 1 and phase-change material nanometer size effect is characterized in that: the thickness that said phase-change material layers is selected for use is 50-200nm.
5. the experimental technique of analysis device action pane according to claim 1 and phase-change material nanometer size effect is characterized in that: the test of said electricity and memory property comprise I-V test, SET test, RESET test and pulse current or voltage-operated under the reversible transition characteristic.
6. the experimental technique of analysis device action pane and phase-change material nanometer size effect is characterized in that, comprises the steps:
(1) on the identical Semiconductor substrate of multi-disc, prepares dielectric layer respectively, on dielectric layer, prepare lower electrode layer again, on each lower electrode layer, prepare the phase-change material layers of different-thickness then respectively;
(2) on each phase-change material layers, prepare upper electrode layer respectively;
(3) utilize beamwriter lithography technology each upper electrode layer to be etched into the top electrode of a plurality of different sizes; Top electrode is of a size of 20nm-200nm; Thereby obtain a plurality of specimen; Wherein, each specimen has the top electrode of same lower electrode layer and a series of different sizes, and has the phase-change material layers of different-thickness;
(4) utilize FIB technology depositing metal lead-in wire on each top electrode; And respectively metal lead wire is connected on the test electrode; Carry out the test of electricity and memory property; Obtain the corresponding electricity and the memory property test data of phase-change material layers of the top electrode and the different-thickness of different size, thus pass test data analysis nanometer size effect wherein.
7. the experimental technique of analysis device action pane according to claim 7 and phase-change material nanometer size effect is characterized in that: the material of said lower electrode layer or upper electrode layer adopts one or more among Al, Cu, W, TiW, TiN, the TiAlN.
8. the experimental technique of analysis device action pane according to claim 7 and phase-change material nanometer size effect is characterized in that: said phase-change material layers adopts the phase-change material of Ge-Sb-Te base system row, Ge-Te base system row or Si base system row.
9. the experimental technique of analysis device action pane according to claim 7 and phase-change material nanometer size effect is characterized in that: the thickness that said phase-change material layers is selected for use is 50-200nm.
10. the experimental technique of analysis device action pane according to claim 7 and phase-change material nanometer size effect is characterized in that: the test of said electricity and memory property comprise I-V test, SET test, RESET test and pulse current or voltage-operated under the reversible transition characteristic.
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