CN1832050A - Method for reliable contact of probe and nano-electrode of phase transformation memory device unit - Google Patents
Method for reliable contact of probe and nano-electrode of phase transformation memory device unit Download PDFInfo
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- CN1832050A CN1832050A CN 200610023827 CN200610023827A CN1832050A CN 1832050 A CN1832050 A CN 1832050A CN 200610023827 CN200610023827 CN 200610023827 CN 200610023827 A CN200610023827 A CN 200610023827A CN 1832050 A CN1832050 A CN 1832050A
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Abstract
A method for realizing reliable contact of probe to nanoelectrode of phase transformation storage includes series - connecting test probe and sample to be tested in a peripheral DC circuit, regulating lift knob slowly and carefully, connecting peripheral DC circuit through and making alarm by alarm series - connected in DC loop when probe pointer is contacted with surface of sample so as ,to present that probe pointer is contacted with sample for enabling to carry out electrical property measurement of sample. The said method can protect sample effectively for avoiding nano-electrode and phase transformation material to be damaged by probe pointer.
Description
Technical field
The present invention relates to a kind of method that realizes that probe and nano-electrode of phase transformation memory device unit reliably contact, relate to or rather in the electrical measurement method of a kind of anti-irradiation phase transformation memory device unit and other electron device and contacting and positioning control with the reliable of measuring probe about nano-electrode, it is a kind of measuring method of simple and practical nano-electrode device cell, belongs to the preparation technology and the electrical characterization field of nano material in the microelectronics.
Background technology
Along with semiconductor devices constantly reduce and more and more higher to the requirement of memory capacity, existing memory faces many challenges, the power consumption that leakage current caused as dynamic RAM (DRAM) is big, the shared area of static RAM (SRAM) is excessive, the erasable time of FLASH (flash memory) is long, power consumption is big, cycle life is short etc., therefore, exploitation low pressure, low-power consumption, at a high speed, the memory technology that has extended cycle life is the main flow of development; On the other hand, development along with hi-techs such as spationautics, nuclear energy, nuclear weapon, the memory circuit that more and more is used for infotech need possess good anti-irradiation ability, otherwise Gamma ray, X ray, high energy proton, electronics, heavy particle etc. produce serious influence to the performance of device, cause reliability, the stability of device and circuit to reduce, even complete failure.Therefore, press in the military affairs research and development have anti-irradiation, non-volatile, read or write speed soon and do not limit the read-write number of times, low in energy consumption, with the novel memory device of characteristics such as existing C MOS (complementary metal oxide semiconductor (CMOS)) processing compatibility is good.
Sulphur based semiconductor phase transition storage (chalcogenide based RAM, it is low C-RAM) to have a cost, speed is fast, the storage density height, make simple and with many outstanding advantages such as current CMOS processing compatibility is good, thereby get more and more people's extensive concerning; In addition, C-RAM has performances such as anti-irradiation (ability of resistant to total dose is greater than 1Mrad (Si)), high-low temperature resistant (55～125 ℃), against violent vibration are moving, anti-electronic interferences, in national defence and aerospace field important application prospects is arranged.Main in the world electronics and semiconductor company all is being devoted to the development of C-RAM at present.There are Ovonyx, Intel, Samsung, IBM, Bayer, ST Micron, AMD, Panasonic, Sony, Philips, British Areospace, Hitachi and Macronix etc. in main research unit.In May, 2005, American I BM, German Infineon science and technology, Taiwan Macronix announce joint study exploitation phase transition storage, send 20～25 technician to participate in this research specially.Three companies provide the technology of being good at separately to study respectively, specifically, exactly with the relevant material that IBM is had and the fundamental research ability of physical characteristics, the research of the various internal memory products that Infineon has, exploitation and volume production technical capability, and the non-voltile memory technical capability of Macronix is integrated in this research.
In the development process of C-RAM storer, need carry out the performance characterization of device cell.But during along with constantly the reducing thickness with phase-change material, electrode material and become very thin of device cell size, particularly because phase-change material GeSbTe is a kind of soft material.Difficulty when these all can bring the electrical properties that utilizes probe in site measurement device cell.Mainly be the reliable contact problems of probe and electrode, common experimentation is difficult to control exactly good contact the between probe and the electrode.If contact pressure is excessive, cause nano-electrode by the probe break-through, probe break-through phase-change material until hearth electrode, causes upper and lower electric pole short circuit when serious.On the other hand, the contact pressure between probe and the electrode is excessive, also can cause the problem such as distortion, needle point damage of nano-probe.In addition, when under low temperature or other condition, measuring, because the difference of material coefficient of thermal expansion coefficient etc., though at room temperature nano-probe is good with contacting of electrode material, but under low temperature, the contact between them may go wrong, and causes carrying out electrical performance testing.The present invention is exactly a kind of simple and practical solution that proposes at the problem that runs in the nanometer electronic device electrical measurements such as nano phase change material GeSbTe, nano-electrode.
Summary of the invention
The invention provides a kind of method that realizes that probe and nano-electrode of phase transformation memory device unit reliably contact.The simple and practical method that reliably contacts between electrode and the probe when also promptly providing a kind of electric property that is used for anti-irradiation memory device unit and other electron device to characterize.Probe is linked to each other with a peripheral DC circuit with sample, slowly regulate the lifting knob of probe, when needle point contacts just with sample, peripheral DC circuit conducting, the warning device that is serially connected in the DC loop is reported to the police, on showing needle point and sample having contacted, the electric property that can carry out sample characterizes.Do like this and on the one hand can protect sample, electrode is not scratched by needle point, and the nano material below the electrode is avoided excessive pressure so that damage; Can protect needle point itself on the other hand, contact pressure is easy to make needle point warpage, distortion improperly, even fracture.Can realize the good contact under the conditions such as low temperature or high temperature in addition.Key step of the present invention is as follows:
(a) utilize the high vacuum magnetically controlled sputter method at SiO
2Deposit one deck cushion on the/Si substrate then utilizes high vacuum magnetically controlled sputter method in-situ deposition one deck bottom electrode, and in-situ sputtering growth phase change material on bottom electrode covers the adiabatic dielectric layer of one deck then on phase-change material again;
(b) sputter top electrode on adiabatic dielectric layer utilizes the electron beam lithography technology to prepare electrode about diameter 100nm then, and bottom electrode is shared;
(c) sample is put on the probe station of electrical measurement system, a nanometer scale probe (being defined as down probe) contacts with shared bottom electrode, because bottom electrode is shared, area is bigger, can use thicker probe; The unsettled top that is placed on top electrode of the probe of another root nanometer scale (being defined as probe), naked eyes are judged and are determined not contact, see accompanying drawing 1 (a);
(d) two probes being connected to one has in the DC loop of warning device, the knob of probe in the adjusting, probe is slowly descended, elder generation's coarse adjustment (speed 100 μ m/S), when probe soon touches upper electrode surface, use fine tuning knob (speed 10 μ m/S) instead, when the alarm of DC loop sends warning, stop to regulate probe, see accompanying drawing 1 (a);
(e) disconnect the flow directing device switch,, carry out writing, wipe, read, store and other electrical performance testing of phase transformation memory device unit, see accompanying drawing 1 (b) the corresponding hole that connects that the joint of electrical measurement system inserts terminal box;
(f) when needs carry out the measurement of electric property under the low temperature, sample is put on the low temperature platform in the annular seal space shown in the accompanying drawing 2, feed liquid nitrogen or other cooling substance, treat temperature stabilization after, utilize said method to regulate probe, determine that contact measures after good;
(g) when needs carry out the measurement of electric property under the high temperature, sample is put on the hot plate in the annular seal space shown in the accompanying drawing 3, utilize said method to regulate probe, after determining under the high temperature probe and electrode well contacting, carry out electrical measurement.
Described cushion is the SiO of thermal oxide
2Ti/TiN film on the substrate, SiO
2Thickness be about 500nm, the about 80nm of the thickness of Ti/TiN film;
The hearth electrode of described phase-changing memory unit, the general W film that adopts conventional magnetically controlled sputter method preparation, the shared hearth electrode that is meant of hearth electrode covers the SiO of whole thermal oxide
2Substrate then will be near a certain zone of edges of substrate as the probe contact region;
The top electrode of described phase-changing memory unit is to utilize nanometer etching technology to form a series of nanometer aperture earlier on heat insulation layer, and the aperture bottom is a phase-change material, utilizes the W film of magnetically controlled sputter method preparation then;
Described nanometer aperture is with electron beam lithography, reactive ion etching or the preparation of focused particle beam etching, but for good nanometer aperture step coverage energy, preferably adopts the method for CVD to prepare, and source of the gas is WF
6, SiH
4, H
2Deng, the about 60-200nm of the thickness of W film.
The needle point diameter of described nanometer scale probe is 95nm-500nm; The last probe of the diameter of following probe is big.
Described ground phase-change material is Ge
2Sb
2Te
5, GeSb
2Te
4, Sb
2Te
3With among the GeSbTe any one.
Described ground phase transformation memory device unit ground electrode material velocity is 50-300nm.
Described extraterrestrial DC circuit only contains a direct current power supply, alarm and switch.
Described test macro comprises pulse signal generator, probe station, digital source table, interface card and computer control part etc.This system has following function:
A. realize the operation such as reading and writing, wiping of C-RAM device;
B. test the fatigue properties of C-RAM device;
C. test other electrology characteristics such as I-V of C-RAM device;
D. monitoring in real time;
The voltage range of described current-voltage (I-V) test macro is at 1-100V, and the current measurement precision is 1pA, and the whole operation process is by computer control, and measurement range, to measure step-length adjustable;
Described low-temperature test is a cavity of sample stage being put into a sealing, and this cavity has an aperture to link to each other with the mechanical pump of outside, keeps certain vacuum tightness (10 in the cavity
3About Pa), the condensation vapor that prevents (to be lower than 100 ℃) under the low temperature influences the performance of sample to sample;
The good metallic channel of thermal conductivity of a sealing is arranged between described sample stage and the sample, and two ends have pipeline to be connected to the external refrigeration system, and the external refrigeration system flows out the end importing metallic channel of cooling material by pipeline from the pipeline other end;
It is to add a hot plate on sample stage that described high temperature is measured down, by regulating the heating control section part that links to each other with hot plate, realizes heating and high temperature measurement to sample;
Described low temperature, pyrometric temperature can be by the occasionally digital DC voltage table measurements of thermoelectricity that is fixed on the sample stage surface.
In sum, the simple and practical convenience of method provided by the invention, and can protect sample effectively, and avoid nano-electrode and phase-change material to be scratched even prick and wear by needle point, cause upper and lower electric pole short circuit; Can protect needle point itself, avoid pressure to cross ambassador's needle point warpage, distortion, even fracture; Can realize that probe contacts with the reliable of electrode under low temperature, high temperature or other environment.This method not only can realize the reliability contact in measuring of anti-irradiation memory device unit, has solved particularly common contact problems in the nanometer electronic device electrical measurement process of other electron device equally, has very big Practical significance.
Description of drawings
The normal temperature electrical measurement system that Fig. 1 provides by the present invention's design
(a) go up probe and do not contact top electrode
(b) go up probe and contact top electrode just
The low temperature electrical measurement system that Fig. 2 provides by the present invention's design
The high temperature electrical measurement system that Fig. 3 provides by the present invention's design
Among the figure: 1. accurate sample positioned platform; 2. the probe of vertical direction minute adjustment (the last probe of 2-1, probe under the 2-2); 3. terminal box; 4. electricity measuring Instrument; 5. sensitive loudspeaker; 6. switch; 7. direct supply; 8. sample; 9. thermopair; 10. digital voltmeter; 11. gland bonnet; 12. view window; 13. mechanical pump; 14. gas filling valve; 15. annular seal space; 16. cold-producing medium input end; 17. cooling chamber; 18. cold-producing medium output terminal; 19. hot plate; 20. add heat control
Embodiment
Embodiment 1: referring to Fig. 1, the main preparation flow and the method for testing of sample are as follows:
(1) substrate has the thick SiO of 500nm for length
2The Si sheet of deielectric-coating at first utilizes the thick Ti/TiN transition bed of magnetically controlled sputter method growth 80nm, and then sputter prepares the thick W of 100nm as hearth electrode;
(2) magnetron sputtering phase-change material GeSbTe, the about 80nm of thickness, base vacuum are 3 * 10
-6Torr, the sputter vacuum is 0.08Pa, power 100W.
(3) sample for preparing is put on the sample stage shown in Figure 1, regulate probe, one contacts with bottom electrode, and another root and top electrode top are unsettled, and two probes are connected in the loop of warning device, close a switch, slowly adjusting knob slowly descends the probe of top electrode top, when alarm equipment alarm, stop to regulate, disconnect alarm switch.
(4) plug of measuring system is received in as shown in the figure the terminal box, measured;
That (5) measures phase-changing memory unit writes, wipes characteristic, studies its memory property, fatigue behaviour and anti-radiation performance etc.;
Embodiment 2: referring to Fig. 2, specimen preparation is with embodiment one, and the method for testing of sample is as follows:
(1) opens the gas filling valve of vacuum system, charge into atmosphere in the annular seal space, open gland bonnet, sample is put in the cavity shown in Figure 2, regulate sample stage, make probe up and down aim at the upper/lower electrode of sample respectively;
(2) close gas filling valve, build gland bonnet, mechanical pump vacuumizes, regulate probe, one contacts with bottom electrode, and another root and top electrode top are unsettled, and two probes are connected in the loop of warning device, close a switch, slowly adjusting knob slowly descends the probe of top electrode top, when alarm equipment alarm, stop to regulate, disconnect alarm switch.
(3) feed liquid nitrogen from refrigerant inlet, observe the reading of digital voltmeter, waiting temperature is stable;
(4) behind the temperature stabilization, the power switch of the warning device that closes checks whether probe and sample contacting at low temperatures be good;
(5) determine good contact after, disconnect alarm switch, the plug of measuring system is received in as shown in Figure 2 the terminal box, measure, measure and write, wipe characteristic under the phase-changing memory unit low temperature, study other performance under its memory property and the low temperature.
Embodiment 3: referring to Fig. 3, specimen preparation is with embodiment one, and the method for testing of sample is as follows:
(1) opens the gas filling valve of vacuum system, charge into atmosphere in the annular seal space, open gland bonnet, sample is put in the cavity shown in Figure 3, regulate sample stage, make probe up and down aim at the upper/lower electrode of sample respectively;
(2) close gas filling valve, build gland bonnet, mechanical pump vacuumizes, regulate probe, one contacts with bottom electrode, and another root is unsettled above top electrode, and two probes are connected in the loop of warning device, close a switch, slowly adjusting knob slowly descends the probe of top electrode top, when alarm equipment alarm, stop to regulate, disconnect alarm switch;
(3) by heating control system heating hot plate, observe the reading of digital voltmeter simultaneously, make its arrival temperature required;
(4) treat temperature stabilization after, the power switch of the warning device that closes checks whether probe and sample contacting at high temperature good;
(5) determine good contact after, disconnect alarm switch, the plug of measuring system is received in as shown in Figure 3 the terminal box, measure writing, wipe, reading and performance such as storage under the research phase-changing memory unit high temperature.
Embodiment 4:
Specimen preparation is with embodiment one, utilize the measuring method of embodiment one can measure the normal temperature I-V characteristic of phase transformation memory device unit, utilize the measuring method of embodiment two can measure the low temperature I-V characteristic of phase transformation memory device unit, utilize the measuring method of embodiment three can measure the high temperature I-V characteristic of phase transformation memory device unit.
Embodiment 5:
Specimen preparation is with embodiment one, utilize the measuring method of embodiment one can measure the normal temperature C-V characteristic of phase transformation memory device unit, utilize the measuring method of embodiment two can measure the low temperature C-V characteristic of phase transformation memory device unit, utilize the measuring method of embodiment three can measure the high temperature C-V characteristic of phase transformation memory device unit.
Claims (9)
1. method that realizes that probe and nano-electrode of phase transformation memory device unit reliably contact, nano-electrode is to utilize the high vacuum magnetically controlled sputter method at SiO earlier
2Deposit one deck cushion on the/Si substrate then utilizes high vacuum magnetically controlled sputter method in-situ deposition one deck bottom electrode, and in-situ sputtering growth phase change material on bottom electrode covers the adiabatic dielectric layer of one deck then on phase-change material again; Sputter top electrode on adiabatic dielectric layer utilizes the electron beam lithography technology to prepare hearth electrode then again, it is characterized in that:
(a) probe contacts with hearth electrode under the nanometer scale, and probe is unsettled above top electrode on the nanometer scale, and probe, sample series connection are received in the peripheral DC loop, and string has an alarm in the DC loop; Sample be placed on have X, on the planar sample platform of Y direction;
(b) go up the lifting knob that probe has its height of control, slowly regulate the lifting knob of probe, elder generation is with the speed coarse adjustment of 100 μ m/S, when probe touches upper electrode surface soon, use the speed fine tuning of 10 μ m/S instead, when probe just contacts with sample, peripheral DC circuit conducting, the alarm that is serially connected in the DC loop sends alerting signal, and the prompting needle point contacts with sample;
(c) switch is arranged in the DC circuit, after alarm equipment alarm, disconnect this switch, testing apparatus is linked to each other with probe by terminal box, the various electric properties that carry out sample characterize.
2. by described realization probe of claim 1 and the method that nano-electrode of phase transformation memory device unit reliably contacts, the thickness of electrode material that it is characterized in that phase transformation memory device unit is in the 50-300nm scope.
3. by described realization probe of claim 1 and the method that nano-electrode of phase transformation memory device unit reliably contacts, the diameter that it is characterized in that described nanometer scale probe is at 95nm-500nm; The last probe of the diameter of following probe is big.
4. by described realization probe of claim 1 and the method that nano-electrode of phase transformation memory device unit reliably contacts, it is characterized in that peripheral DC circuit only contains a direct current power supply, alarm and switch.
5. by described realization probe of claim 1 and the method that nano-electrode of phase transformation memory device unit reliably contacts, it is characterized in that the SiO of described cushion position thermal oxide
2Ti/TiN film on the substrate, SiO
2Thickness be 500nm, the thickness of Ti/TiN film is 80nm.
6. by described realization probe of claim 1 and the method that nano-electrode of phase transformation memory device unit reliably contacts, it is characterized in that:
The hearth electrode of described phase-changing memory unit is the W film that adopts conventional magnetically controlled sputter method preparation, and hearth electrode covers the SiO of whole thermal oxide
2Substrate will realize that as the probe contact region hearth electrode is shared near a certain zone of edges of substrate then;
The top electrode of described phase-changing memory unit is to utilize nanometer etching technology to form a series of nanometer aperture earlier on heat insulation layer, and the aperture bottom is a phase-change material, utilizes the W film of magnetically controlled sputter method preparation then;
Described nanometer aperture is that source of the gas is WF with electron beam lithography CVD reactive ion etching or the preparation of focused particle beam etching
6, SiH
4Or H
2, the about 60-200nm of the thickness of W film.
7. by claim 1 or 6 described realization probes and the method that nano-electrode of phase transformation memory device unit reliably contacts, the phase-change material that it is characterized in that phase transition storage is Ge
2Sb
2Te
5, GeSb
2Te
4, Sb
2Te
3With among the GeSbTe any one.
8. the method that reliably contacts by any described realization probe in the claim 1 to 6 and nano-electrode of phase transformation memory device unit, it is characterized in that when low-temperature test it being the cavity of sample stage being put into a sealing, this cavity has an aperture to link to each other with the mechanical pump of outside, keeps cavity interior 10
3The vacuum tightness of Pa prevents to be lower than under 100 ℃ of low temperature condensation vapor to sample; The heat conductive metal groove that a sealing is arranged between described sample stage and the sample, two ends have pipeline to be connected to the external refrigeration system, and the external refrigeration system flows out the end importing metallic channel of cooling material by pipeline from the pipeline other end; Temperature can be by the occasionally digital voltmeter measurement of thermoelectricity that is fixed on the sample stage surface.
9. press the method that any described realization probe of claim 1 to 6 and nano-electrode of phase transformation memory device unit reliably contact, when it is characterized in that at high temperature measuring, on sample stage, add a hot plate, by regulating the heating control section part that links to each other with hot plate, realize heating and high temperature measurement to sample; The temperature of measuring can be by the occasionally digital DC voltage table measurement of thermoelectricity that is fixed on the sample stage surface.
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| CN101776718B (en) * | 2009-12-25 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Method for fast representing phase-change materials and dielectric layers |
| CN102759669A (en) * | 2011-04-25 | 2012-10-31 | 中国科学院上海微系统与信息技术研究所 | Experimental method of nanometer size effects of analytical device operation window and phase-change material |
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| CN100397676C (en) * | 2004-08-06 | 2008-06-25 | 中国科学院上海微系统与信息技术研究所 | Characterization emthod for convertable phase change material electric property |
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| CN101776718B (en) * | 2009-12-25 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Method for fast representing phase-change materials and dielectric layers |
| CN102759669A (en) * | 2011-04-25 | 2012-10-31 | 中国科学院上海微系统与信息技术研究所 | Experimental method of nanometer size effects of analytical device operation window and phase-change material |
| CN110346615A (en) * | 2019-08-27 | 2019-10-18 | 内蒙古工业大学 | A kind of low temperature AC/DC electrical properties test device |
| CN110346615B (en) * | 2019-08-27 | 2022-10-11 | 内蒙古工业大学 | Low-temperature alternating/direct current electrical property testing device |
| CN110501526A (en) * | 2019-09-06 | 2019-11-26 | 仪晟科学仪器(嘉兴)有限公司 | The extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum |
| CN110501526B (en) * | 2019-09-06 | 2024-05-07 | 仪晟科学仪器(嘉兴)有限公司 | Ultra-high vacuum ultra-low temperature four-probe measuring device and method thereof |
| CN111044803A (en) * | 2019-12-12 | 2020-04-21 | 佛山市卓膜科技有限公司 | Piezoelectric coefficient measuring method for piezoelectric material |
| CN111624375A (en) * | 2020-07-01 | 2020-09-04 | 强一半导体（苏州）有限公司 | Probe card for high-temperature and high-pressure test of power device and key structure thereof |
| CN114487748A (en) * | 2022-01-19 | 2022-05-13 | 北京航空航天大学 | Method for heat shielding of probe assembly |
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