CN110501526B - Ultra-high vacuum ultra-low temperature four-probe measuring device and method thereof - Google Patents
Ultra-high vacuum ultra-low temperature four-probe measuring device and method thereof Download PDFInfo
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- CN110501526B CN110501526B CN201910841779.2A CN201910841779A CN110501526B CN 110501526 B CN110501526 B CN 110501526B CN 201910841779 A CN201910841779 A CN 201910841779A CN 110501526 B CN110501526 B CN 110501526B
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- probe
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- low temperature
- high vacuum
- electrode
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- 239000000523 sample Substances 0.000 title claims abstract description 173
- 238000000034 method Methods 0.000 title abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000000691 measurement method Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- -1 vacuum Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
- G01Q30/025—Optical microscopes coupled with SPM
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/08—Means for establishing or regulating a desired environmental condition within a sample chamber
- G01Q30/10—Thermal environment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/08—Means for establishing or regulating a desired environmental condition within a sample chamber
- G01Q30/16—Vacuum environment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention discloses an ultra-high vacuum ultra-low temperature four-probe measuring device and a method thereof, wherein the ultra-high vacuum ultra-low temperature four-probe measuring method comprises the following steps of S1: sample growth electrode, step S2: placing the sample after growing the electrode on a first sample holder, and step S3: rotating the probe station by rotating the screw and to a sample position after the probe contacts the growth electrode in the first sample holder, step S4: observing whether the probe contacts the electrode by a microscope, step S5: the integrity of the electrode growth is detected by energizing the probe. The invention discloses an ultra-high vacuum ultra-low temperature four-probe measuring device and a method thereof, which are matched with a microscope for use, and the integrity of a sample is detected by applying direct current.
Description
Technical Field
The invention belongs to the technical field of probe measurement, and particularly relates to an ultra-high vacuum ultra-low temperature four-probe measurement device and an ultra-high vacuum ultra-low temperature four-probe measurement method.
Background
An electrode is a component of an electronic or electrical device, apparatus, or the like, that serves as both ends for the input or output of an electrical current in a conductive medium (solid, gas, vacuum, or electrolyte solution). One pole of the input current is called anode or positive pole, and one pole of the output current is called cathode or negative pole. The electrodes are of various types, such as cathodes, anodes, welding electrodes, electric furnace electrodes, etc.
The electrodes need to be inspected after production to ensure the integrity of the electrodes, but there is currently no inspection device on the market that detects the integrity and no damage of the electrodes in an extremely low temperature, ultra-high vacuum environment.
Disclosure of Invention
The invention mainly aims to provide an ultra-high vacuum ultra-low temperature four-probe measuring device and a method thereof, which are matched with a microscope for use, and the integrity of a sample is detected by applying direct current.
The invention further aims to provide an ultra-high vacuum ultra-low temperature four-probe measuring device and a method thereof, which adopt a torsion spring to eliminate thread clearance and have restoring force.
The invention mainly aims to provide an ultra-high vacuum ultra-low temperature four-probe measuring device and a method thereof, which are provided with a limiting mechanism for limiting the rotation angle of a probe station and protecting probes.
The invention mainly aims to provide an ultra-high vacuum ultra-low temperature four-probe measuring device and a method thereof, which are compatible with ultra-high vacuum ultra-low temperature environments.
In order to achieve the above purpose, the invention provides an ultra-high vacuum ultra-low temperature four-probe measuring method for detecting electrode growth, comprising the following steps:
Step S1: a sample growth electrode;
Step S2: placing the sample after growing the electrode on a first sample holder;
Step S3: rotating the probe station by rotating the screw and to a sample position after the probe contacts the growth electrode in the first sample holder;
step S4: observing whether the probe contacts the electrode or not through a microscope;
Step S5: the integrity of the electrode growth is detected by energizing the probe.
As a further preferable embodiment of the above-described embodiment, the screw top is a hemisphere and the hemisphere is rotated against the probe stage by rotating the screw.
As a further preferable technical scheme of the above technical scheme, the step 5 is specifically implemented as the following steps:
step S5.1: if the electrode is conducted after the probe is electrified, the electrode grows well;
Step S5.2: if the electrode is not conductive after the probe is electrified, the electrode does not grow well.
In order to achieve the above object, the present invention provides an ultra-high vacuum ultra-low temperature four-probe measuring apparatus, comprising:
The base is provided with a threaded cavity and a supporting part;
The screw rod part is internally arranged in the threaded cavity, and the top of the screw rod is a hemisphere;
The probe platform, the probe platform is located the upper end of base and the base passes through supporting part and supports the probe platform, the screw rod passes through the hemisphere and the probe platform contact and the screw rod makes the hemisphere rotate through rotatory with the hemisphere against the probe platform, four probes are installed to the upper end of probe platform, the probe is used for contacting the electrode and detects the integrality of electrode.
The lower end of the supporting leg is fixedly connected with the base through a nut, the middle end of the supporting leg is provided with a bearing, and the side end connecting part of the probe platform is embedded in the bearing to enable the probe platform to rotate relative to the supporting leg;
the upper ends of the supporting legs are fixedly connected with the upper plate frame through nuts;
the upper end of the sample support device is fixedly connected with the upper plate frame.
As a further preferable technical scheme of the technical scheme, a torsion spring is arranged between the probe platform and the supporting leg, the torsion spring is arranged at the side end connecting part of the probe platform, and the torsion spring is used for eliminating thread clearances.
As a further preferable technical scheme of the above technical scheme, the sample holder device is provided with a first sample holder and a second sample holder, the first sample holder is fixedly connected with the second sample holder, the first sample holder is located below the second sample holder, and the first sample holder is located above the probe.
As a further preferable technical scheme of the technical scheme, the second sample holder is a sample holder with magnetic force, and the second sample holder is used for increasing the magnetic field environment.
As a further preferable technical scheme of the technical scheme, the upper plate frame is provided with copper braids, and the copper braids are used for transmitting temperature.
As a further preferable aspect of the above-described aspect, the support portion is configured to limit a rotation angle of the probe stage. As a further preferable technical scheme of the technical scheme, the ultra-high vacuum ultra-low temperature four-probe measuring device is made of oxygen-free copper.
Drawings
Fig. 1 is a schematic diagram of the ultra-high vacuum ultra-low temperature four-probe measuring device and the method thereof according to the present invention.
Fig. 2 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring device and a method thereof according to the present invention.
Fig. 3 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring device and a method thereof according to the present invention.
Fig. 4 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring apparatus and a method thereof according to the present invention.
Fig. 5 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring apparatus and a method thereof according to the present invention.
The reference numerals include: 10. a base; 11. a support part; 20. a screw; 30. a probe station; 31. a probe; 32. a side end connection portion; 33. a torsion spring; 40. a support leg; 41. a bearing; 50. an upper plate frame; 60. a sample holder device; 61. a first sample holder; 62 second sample holder.
Detailed Description
The following description is presented to enable one of ordinary skill in the art to make and use the invention. The preferred embodiments in the following description are by way of example only and other obvious variations will occur to those skilled in the art. The basic principles of the invention defined in the following description may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
Referring to fig. 1 of the drawings, fig. 1 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring apparatus and a method thereof according to the present invention, fig. 2 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring apparatus and a method thereof according to the present invention, fig. 3 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring apparatus and a method thereof according to the present invention, fig. 4 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring apparatus and a method thereof according to the present invention, and fig. 5 is a schematic structural view of an ultra-high vacuum ultra-low temperature four-probe measuring apparatus and a method thereof according to the present invention.
In a preferred embodiment of the present invention, it should be noted by those skilled in the art that copper braids, torsion springs, etc. to which the present invention relates may be considered prior art.
Preferred embodiments.
The invention discloses an ultra-high vacuum ultra-low temperature four-probe measuring method, which is used for detecting electrode growth and comprises the following steps:
Step S1: a sample growth electrode;
Step S2: placing the sample after growing the electrode on a first sample holder 61;
Step S3: rotating the probe station 30 by rotating the screw 20 and to a sample position after the probe 31 contacts the growth electrode in the first sample holder 61;
step S4: observing whether the probe contacts the electrode or not through a microscope;
step S5: the integrity of the electrode growth is detected by energizing the probe 31.
Specifically, the top of the screw 20 is a hemisphere and the hemisphere is rotated against the probe stage 30 by rotating the screw 20.
More specifically, the step 5 is implemented as the following steps:
Step S5.1: if the electrode is conducted after the probe 31 is electrified, the electrode grows well;
Step S5.2: if the electrode is not conductive after the probe 31 is energized, the electrode does not grow well.
The invention discloses an ultra-high vacuum ultra-low temperature four-probe measuring device, which is used for detecting electrode growth and comprises the following components:
a base 10 provided with a threaded cavity and a support 11;
the screw rod 20 is internally arranged in the threaded cavity, and the top of the screw rod is a hemisphere;
a probe stage 30, the probe stage 30 being located at an upper end of the base 10 and the base 10 supporting the probe stage 30 through a supporting part 11, the screw 20 being in contact with the probe stage 30 through a hemisphere and the screw 20 rotating the hemisphere against the probe stage 30 by rotation, four probes 31 being installed at an upper end of the probe stage 30, the probes 31 being for contacting an electrode and detecting the integrity of the electrode.
The lower end of the supporting leg 40 is fixedly connected with the base 10 through a nut, a bearing 41 is arranged at the middle end of the supporting leg 40, and the side end connecting part 32 of the probe platform 30 is embedded in the bearing 41 to enable the probe platform 30 to rotate relative to the supporting leg 40;
the upper plate frame 50, the upper end of the supporting leg 40 is fixedly connected with the upper plate frame 50 through a nut;
The sample support device 60, the upper end of the sample support device 60 is fixedly connected with the upper plate frame 50.
Further, a torsion spring 33 is provided between the probe platform 30 and the leg 40, the torsion spring 33 is mounted on the side end connection portion 32 of the probe platform 30, and the torsion spring 33 is used for eliminating thread clearance.
Further, the sample holder device 60 is provided with a first sample holder 61 and a second sample holder 62, the first sample holder 61 is fixedly connected with the second sample holder 62, the first sample holder 61 is located below the second sample holder 62, and the first sample holder 61 is located above the probe 31.
Preferably, the second sample holder 62 is a magnetically loaded sample holder, and the second sample holder 62 is configured to increase the magnetic field environment.
Preferably, the upper plate rack 50 is provided with copper braids for transferring temperature.
Preferably, the support 11 is used to limit the rotation angle of the probe station 30.
Preferably, the ultra-high vacuum ultra-low temperature four-probe measuring device is made of oxygen-free copper.
It should be noted that technical features such as copper braids, torsion springs and the like related to the present application should be regarded as the prior art, and specific structures, working principles, control modes and spatial arrangement related to the technical features may be selected conventionally in the art, and should not be regarded as the invention point of the present application, which is not further specifically expanded and detailed.
Modifications of the embodiments described above, or equivalents of some of the features may be made by those skilled in the art, and any modifications, equivalents, improvements or etc. within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. An ultra-high vacuum ultra-low temperature four-probe measuring device for detecting electrode growth, comprising:
The base is provided with a threaded cavity and a supporting part;
The screw rod part is internally arranged in the threaded cavity, and the top of the screw rod is a hemisphere;
A probe stage which is located at an upper end of the base and which supports the probe stage by a supporting portion, the screw being in contact with the probe stage by a hemisphere and the screw rotating the hemisphere against the probe stage, four probes being installed at an upper end of the probe stage, the probes being for contacting an electrode and detecting the integrity of the electrode;
the lower end of the supporting leg is fixedly connected with the base through a nut, the middle end of the supporting leg is provided with a bearing, and the side end connecting part of the probe platform is embedded in the bearing to enable the probe platform to rotate relative to the supporting leg;
the upper ends of the supporting legs are fixedly connected with the upper plate frame through nuts;
the upper end of the sample support device is fixedly connected with the upper plate frame.
2. The ultra-high vacuum ultra-low temperature four-probe measuring device according to claim 1, wherein a torsion spring is arranged between the probe table and the supporting leg, the torsion spring is mounted at a side end connecting part of the probe table, and the torsion spring is used for eliminating a thread clearance.
3. The ultra-high vacuum ultra-low temperature four-probe measuring device according to claim 2, wherein the sample holder device is provided with a first sample holder and a second sample holder, the first sample holder is fixedly connected with the second sample holder, the first sample holder is located below the second sample holder, and the first sample holder is located above the probe.
4. The ultra-high vacuum ultra-low temperature four-probe measurement apparatus according to claim 3, wherein the second sample holder is a magnetically loaded sample holder, and the second sample holder is adapted to increase a magnetic field environment.
5. The ultra-high vacuum ultra-low temperature four-probe measuring device according to claim 1, wherein the upper plate frame is provided with copper braids for transferring temperature.
6. The ultra-high vacuum ultra-low temperature four-probe measuring apparatus according to claim 1, wherein the supporting portion is configured to limit a rotation angle of the probe stage.
7. The ultra-high vacuum ultra-low temperature four-probe measuring device according to claim 1, wherein the ultra-high vacuum ultra-low temperature four-probe measuring device is made of oxygen-free copper.
8. An ultra-high vacuum ultra-low temperature four-probe measurement method for detecting electrode growth, characterized in that an ultra-high vacuum ultra-low temperature four-probe measurement device according to any one of claims 1 to 7 is applied, the ultra-high vacuum ultra-low temperature four-probe measurement method comprising the steps of:
Step S1: a sample growth electrode;
Step S2: placing the sample after growing the electrode on a first sample holder;
Step S3: rotating the probe station by rotating the screw and to a sample position after the probe contacts the growth electrode in the first sample holder;
step S4: observing whether the probe contacts the electrode or not through a microscope;
Step S5: the integrity of the electrode growth is detected by energizing the probe.
9. The ultra-high vacuum ultra-low temperature four-probe measurement method according to claim 8, wherein the top of the screw is a hemisphere and the hemisphere is rotated against the probe stage by rotating the screw.
10. The ultra-high vacuum ultra-low temperature four-probe measurement method according to claim 8, wherein the step 5 is specifically implemented as the following steps:
step S5.1: if the electrode is conducted after the probe is electrified, the electrode grows well;
Step S5.2: if the electrode is not conductive after the probe is electrified, the electrode does not grow well.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910841779.2A CN110501526B (en) | 2019-09-06 | 2019-09-06 | Ultra-high vacuum ultra-low temperature four-probe measuring device and method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910841779.2A CN110501526B (en) | 2019-09-06 | 2019-09-06 | Ultra-high vacuum ultra-low temperature four-probe measuring device and method thereof |
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| Publication Number | Publication Date |
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| CN110501526A CN110501526A (en) | 2019-11-26 |
| CN110501526B true CN110501526B (en) | 2024-05-07 |
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| CN113884706A (en) * | 2020-07-02 | 2022-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vacuum interconnection system and transfer vacuum sample support |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2301001Y (en) * | 1997-04-16 | 1998-12-16 | 连依得企业有限公司 | Plug capable of testing socket perfectness |
| DE10229946A1 (en) * | 2002-07-04 | 2004-01-29 | Vibtec Schwingungstechnik Gmbh | Test method for electric/electronic components detects an electrical parameter for the components under preset environmental conditions |
| DE202004012130U1 (en) * | 2004-08-03 | 2004-10-28 | Seidel, Christian, Dr. | Quadrupole measuring device, for measurements at a probe surface under ultra-high vacuum conditions, has moveable electrode carrier supporting four convex electrodes, which is driven by single piezo-actuator |
| CN1832050A (en) * | 2006-02-10 | 2006-09-13 | 中国科学院上海微系统与信息技术研究所 | Method for reliable contact of probe and nano-electrode of phase transformation memory device unit |
| CN201145728Y (en) * | 2007-11-27 | 2008-11-05 | 比亚迪股份有限公司 | Apparatus for testing chip |
| CN101521047A (en) * | 2009-01-21 | 2009-09-02 | 中国科学院物理研究所 | Technology for manufacturing miniature four-point probe working in ultra-high vacuum variable-temperature condition |
| CN103135046A (en) * | 2011-12-05 | 2013-06-05 | 日本麦可罗尼克斯股份有限公司 | Inspection apparatus for semiconductor devices and chuck stage used for the inspection apparatus |
| CN103424578A (en) * | 2013-07-12 | 2013-12-04 | 深圳市天微电子有限公司 | Rotary lifting mechanism for probe station |
| CN203857217U (en) * | 2014-05-23 | 2014-10-01 | 佛山市南海祥旺光学电子制品有限公司 | Omni-directional adjustable hemispherical supporting balance device |
| CN204359927U (en) * | 2014-12-05 | 2015-05-27 | 许继集团有限公司 | A kind of single-board testing device |
| CN106461631A (en) * | 2014-06-05 | 2017-02-22 | 豪夫迈·罗氏有限公司 | Electrode arrangements for test element integrity |
| CN206223928U (en) * | 2016-11-25 | 2017-06-06 | 珠海艾派克微电子有限公司 | Test head interface circuit and consumable chip read-write processing system |
| CN210775555U (en) * | 2019-09-06 | 2020-06-16 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum extremely-low temperature four-probe measuring device |
-
2019
- 2019-09-06 CN CN201910841779.2A patent/CN110501526B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2301001Y (en) * | 1997-04-16 | 1998-12-16 | 连依得企业有限公司 | Plug capable of testing socket perfectness |
| DE10229946A1 (en) * | 2002-07-04 | 2004-01-29 | Vibtec Schwingungstechnik Gmbh | Test method for electric/electronic components detects an electrical parameter for the components under preset environmental conditions |
| DE202004012130U1 (en) * | 2004-08-03 | 2004-10-28 | Seidel, Christian, Dr. | Quadrupole measuring device, for measurements at a probe surface under ultra-high vacuum conditions, has moveable electrode carrier supporting four convex electrodes, which is driven by single piezo-actuator |
| CN1832050A (en) * | 2006-02-10 | 2006-09-13 | 中国科学院上海微系统与信息技术研究所 | Method for reliable contact of probe and nano-electrode of phase transformation memory device unit |
| CN201145728Y (en) * | 2007-11-27 | 2008-11-05 | 比亚迪股份有限公司 | Apparatus for testing chip |
| CN101521047A (en) * | 2009-01-21 | 2009-09-02 | 中国科学院物理研究所 | Technology for manufacturing miniature four-point probe working in ultra-high vacuum variable-temperature condition |
| CN103135046A (en) * | 2011-12-05 | 2013-06-05 | 日本麦可罗尼克斯股份有限公司 | Inspection apparatus for semiconductor devices and chuck stage used for the inspection apparatus |
| CN103424578A (en) * | 2013-07-12 | 2013-12-04 | 深圳市天微电子有限公司 | Rotary lifting mechanism for probe station |
| CN203857217U (en) * | 2014-05-23 | 2014-10-01 | 佛山市南海祥旺光学电子制品有限公司 | Omni-directional adjustable hemispherical supporting balance device |
| CN106461631A (en) * | 2014-06-05 | 2017-02-22 | 豪夫迈·罗氏有限公司 | Electrode arrangements for test element integrity |
| CN204359927U (en) * | 2014-12-05 | 2015-05-27 | 许继集团有限公司 | A kind of single-board testing device |
| CN206223928U (en) * | 2016-11-25 | 2017-06-06 | 珠海艾派克微电子有限公司 | Test head interface circuit and consumable chip read-write processing system |
| CN210775555U (en) * | 2019-09-06 | 2020-06-16 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum extremely-low temperature four-probe measuring device |
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| CN110501526A (en) | 2019-11-26 |
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