CN102754216A - 具有光敏层的光电模块或具有太阳能吸收器的太阳能收集器 - Google Patents
具有光敏层的光电模块或具有太阳能吸收器的太阳能收集器 Download PDFInfo
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Abstract
本发明涉及基于金属带状物基片的光电模块,其允许经由层结构的整体式的相互连接,其中,所述基片表面以这样的方式构造,该方式通过增加表面并减少反射或靶反射而使得效率增加20%。本发明进一步地涉及基于金属带状物基片的太阳能吸收器模块,其中,光-光效应以相同的方式得以应用,并且效率得以相应地提高。
Description
本发明涉及具有如权利要求1所要求保护的具有光敏层的光电模块,或是涉及如权利要求12所要求保护的具有太阳能吸收器的太阳能收集器。
在铝和钢铁行业中,已知可以通过滚压而构造表面,薄铝板和薄钢板构造成用作车体组件,以使得在随后的拉伸过程中,喷漆后的车体表面不会显现出流线。用于直接构造工作辊的表面或带状物的表面的方法的实例为激光毛化、抛光或喷砂。通常所说的EBT方法(电子束毛化)或EDT方法(电火花毛化)也是已知的产生有纹理的表面的方法。然而,该类型的辊结构导致了非常粗糙的具有不规则的几何形状的表面,在许多的应用中,这样的表面不能满足光学或机械特性的要求。
专利文献EP1146971B1揭露了机械地构造的铝合金薄片,其适用于照明设备中的反射器系统。对于这些应用,该薄片需要具有适当的光度性能。最重要的光度性能包括高度总反射,通过所述总反射,入射光的最大部分从表面处被反射。此外,所述薄片表面优选的特性包括漫射或不定向光反射。这样的特性通过使用至少一个带有纹理的工作辊滚压所述金属薄片得以实现。制造不定向反射、漫反射薄片表面,在所述不定向反射、漫反射薄片的整个表面上形成有随机成形的微观凹陷。优选地,所述凹陷形成彼此相邻或重叠放置的顶部瓦片状结构的内部啮合构造。
进一步的应用通过专利文献EP1368140B1而得知。在所描述的方法中,金属薄片或金属带状物被运至在其表面上具有纹理图案的工作辊之间,而这些图案由经由多次滚压而转移到所述薄片或带状物上。由每一次的滚压所形成的结构相互重叠以形成最终的纹理图案。这样的结构也可通过在多个连续排列的工作辊对之间滚压通过而产生。经由多次滚压之后铝带状物的纹理包括有微观表面图案。通过最小程度的变形,可以寻找由所述工作辊所预先确定的大体上的原始且未发生畸变的结构。优选地,以这样的方式生产的金属薄片被用作平版或被用作汽车反光板。
进一步地,所述平版可从从专利文献WO97/31783A1中得知的。在该情况下,所述经过滚压的结构形成均匀的不定向的微观结构,在所述微观结构中,表面上的凹形在很大程度上彼此重叠或相互合并在一起。
本发明的目的在于精制光电模块以及太阳能收集器,以通过增加有效表面积并且减少反射而使得其效率得以提高。
其打算通过构造具有特殊的拓扑形状(topographical shape)的表面得以实现。传统的铜铟硒(CIS)薄膜电池(thin-film cell)制造于玻璃或玻璃陶瓷基片上,所述玻璃或玻璃陶瓷基片昂贵、不具弹性并且因此在组装和运输的过程中容易断裂;进一步地,这样的基片制造困难且费用昂贵。
就光电模块而言,本发明通过权利要求1的技术特征而得以反映;而就太阳能收集器而言,本发明通过权利要求12的技术特征而得以反映。进一步的从属权利要求涉及本发明有益的细化和发展。
本发明涉及具有光敏层的光电模块,其基于由金属带状物或由所述金属带状物制的的薄片所组成的经过滚压的金属基片上,所述金属带状物由铜或铜合金带状物、铝或铝合金带状物、铁或铁合金带状物、钛或钛合金带状物、镍或镍合金带状物或不锈钢带状物构成。金属基片包括有表面结构,所述表面结构的粗糙度在Ra=0.01-5μm和/或Rz=0.01-20μm的范围内。所述表面结构包括有凹陷,所述凹陷具有0.3-300μm的最小侧距离。所述凹陷设置于开放结构中,其侧距离平行于带状物表面延伸,所述带状物表面的长/宽比从3∶1到1∶3,所述长度在滚压方向上得以测量,而所述宽度则在垂直于滚压方向的方向上得以测量。外形间隙因数(profilevoidfactor)λp落在0.25到0.85的范围内。
本发明是基于如下的想法:用于光电模块或太阳能收集器的呈金属带状物或金属薄片形式的经滚压的金属基片的表面具有表面精细结构。这些结构(实际上相当于抛物柱面反射镜)形成到太阳能电池的光敏层,并且通过减少散射和定向反射而优化光输出,以使得反射的太阳光再次射到所述太阳能电池表面。
所述精细结构可被引入到没有涂层的带状物或薄片表面,或已经被引入到覆盖有至少一层的表面。在车体构造中,为了生产出精细的薄片结构,已知需要所述工作辊。例如,它们包括具有电解产生结构的工作辊表面以及电镀硬铬。
在本发明的内容中,开放结构意指所述基片材料上的表面构造,其包括有位于仍然呈光滑外形的表面上的单个凹陷。例如,相邻的凹陷之间也可能相接触或是略有重叠,尽管它们没有像结构元件那样以如下的方法相互合并,在该方式中,所述表面的形貌仅仅具有均匀粗糙的外形。因此,通过滚压,精细结构在基片表面上形成,其包括初始表面形貌的或多或少的光滑未变形的原始背景。例如,PRETEX旗下的辊结构在此得以理解。对于这样的表面,重要的是所述表面的原始背景包括大百分比的支承面积。
具有所指出的最小侧距离的凹陷可为圆形。进一步地,也可以设想为椭圆形。在椭圆形的情况下,所述最小侧距离是所述椭圆形的短轴的2倍。而在圆形的情况下,所述最小侧距离与所述圆形的直径相对应。不同的凹陷自身的侧距离在整个0.3-300μm的区间范围内变化,或是在一个特定的数值周围小范围的波动。例如,所述最小侧距离的典型数值为20μm,接近高斯正态分布,所述最小侧距离典型的数值具有一个波动范围,其具有5μm的标准偏差。为了生产均匀的结构尺寸,在所指出的间隔中,也可得以建立较窄的限制。尽管最小侧距离的小波动范围在实践中经常发生,但一旦选择就是确定的。
原则上,所述凹陷布置于开放结构中,并具有平行于带状物表面延伸的侧距离,所述带状物表面的长/宽比从3∶1到1∶3,所述长度在滚压方向上测量,而所述宽度则在垂直于滚压方向的方向上测量。通常地,1∶1的长/宽比得以被寻找,其与圆形边缘边界线相对应。依赖于所述凹陷的构造并且由于滚压过程中带状物的张力,确定的拉伸可能发生。依赖于光线入射,所述结构所给出的长/宽比可具有高效率的光输出。
常规的粗糙度参数Ra和Rz自身已经无法令人满意地限定所述表面轮廓形状的形成。通过测量方法对这样的轮廓形状的说明是通过外形空隙因数λp得以实现。在这种情况下,对于所述外形形状而言,重要的是一种形状得以选择,其主要地以相同的方式充当抛物柱面反射镜,以便相应地加强光的光输出。所述粗糙度参数也可通过Abott支承面积曲线tp以及空间间隙因数得以描述。
特别的优点在于,本发明所述结构能够充分地为光电模块中的效率的提高作出贡献,所述效率可提高20%。在通过光学连接方法实现的模块的生产和加工的过程中,例如使用激光焊接方法,光束输入也确实受到所述表面的低反射率的影响。同样地,可焊性通过浸润或反浸润特性的改进而得以增加。
在本发明优选的构造中,用于调节热膨胀的补偿层和/或扩散壁垒层可应用于所述金属基片上。利用所谓的cte的补偿层,分别地彼此相接触地设置的材料的不同的热膨胀特性,例如基片材料,扩散壁垒层或光敏半导体层,被相应地改变和补偿。术语cte取自名词“热膨胀系数(coefficient of thermal expansion)”的首字母,其在技术领域中是通用的。以这种方式,所述基片材料相对于应用于其上的光敏层而得以改变。
有益地,所述补偿层或扩散壁垒层可由TiC、WC、TiN、TiNOx、TiOx、Mo、Cr、Co、NiCo、Ni或镍铁合金和/或它们的组合制的。通过这样的层组合,对所述基片和绝缘层的热膨胀和粘合性进行改变。为了确保可靠的改变,所述cte补偿层或扩散壁垒层的厚度为100nm到100μm。
传统的基于金属的CIS或铜铟镓硒(CIGS)太阳能模块的构造是通过使用所谓的瓦片式技术(shingle technique)相互连接而得以实现的,其比较精细也比较密集。为了在所述太阳能模块的生产过程中达到直接的或整体式的相互连接,在本发明的一个有益的实施方式中,电绝缘涂层可被应用于所述金属基片、cte补偿层或扩散壁垒层上。在这种情况下,所述电绝缘涂层可以为至少一层陶瓷层,所述陶瓷层由Al2O3、ZrO2、SiO2、SiOH、Si3N4、AlN组成或这些层的组合。为了确保可靠的电绝缘,所述涂的厚度可以为100nm到100μm,优选地为500nm到100μm之间。另外,在所述CIS/CIGS层的生产过程中,所述绝缘层还用于防止铜的表面扩散。
在本发明的一个有益的构造中,钼层也被应用于所述绝缘涂层上和/或未设置光敏层的带状物或薄板的背面。该层作为与布置于该结构上的太阳能电池光敏层相接触的金属背面而得以使用,生成的电流穿过其中。所述钼层的层厚可在3μm到200μm之间,所述钼层通过例如喷镀的方式得以应用。
在另外一个有益的结构中,CIS或CIGS层包括由氧化锌(ZnO)构成的相对应的前侧接触层以及由硫化镉(CdS)构成的中间层,它们通过适当的构造而布置于预先确定的层结构中,以形成整体地彼此相互连接的CIS太阳能电池,并可用作钼层上的光敏涂层。在作为金属背面接触的钼层的帮助下,模块中单个的太阳能电池能够彼此相互连接。通过对单层以及以CVD、PVD或电镀涂层的方法形成的层系统的应用,本发明所述的凹陷可能会在所述基片表面精细成型的过程中贯穿太阳能电池的光敏层形成,并且因此通过减少或控制反射连同有效表面积的增加一起优化所述光输出。由复合半导体生产这样的太阳能电池已经是公知的,并且可依据基片材料加以改变,这是基于本领域技术人员的知识。以这样的方式,光电模块能够在金属条状物基片的基础上生产,其允许借助于层结构的整体式的相互连接,所述基片表面以这样的方法得以构造,通过表面积增加以及反射的减少或控制的反射使效率提升20%。
有益地,管材和通道由铜或铜合金构成,用于冷却可能被熔焊、焊接或胶接在所述金属基片的背面上的电池。由于冷却效应,太阳能电池背面上的液体环路确保了更高的电流效率。进一步进地,受热的液体可以被应用于辅助加热。以这样的方式形成的组合的光电/太阳能热模块与传统系统相比在效率上具有实质性的提高。
本发明的另外一方面涉及具有太阳能吸收器的太阳能收集器,其包括由金属带状物或由所述金属带状物制的的薄片所构成的经过滚压的金属基片,所述金属带状物铜或铜合金带状物、铝或铝合金带状物、铁或铁合金带状物、钛或钛合金带状物、镍或镍合金带状物或不锈钢带状物构成。收集器层应用于其上的金属基片包括表面结构,所述表面结构可为等向性的,其粗糙度在Ra=0.01-5μm和/或Rz=0.01-20μm的范围内。所述表面结构包括有凹陷,所述凹陷具有0.3-300μm的最小侧距离。所述凹陷设置于开放结构中,具有平行于带状物表面延伸的侧距离,其长/宽比从3∶1到1∶3,所述长度在滚压方向上得以测量,而所述宽度则在垂直于滚压方向的方向上得以测量。外形间隙因数λp落在0.25到0.85的范围内。
本发明的这一方面是基于与已经在上文中参考权利要求1而得以描述的相同的想法和益处。以这样的方式,生产基于金属带状物基片的太阳能吸收器模块是可能的,其中,光学照相效应得以以相同的方式被利用,并且因此效率也以相同的方式提高。
作为本发明的组件方面,光电模块以及太阳能收集器共有的有益的构造在下文中更详细地描述。
优选地,在所述光电模块以及太阳能收集器中,所述凹陷的宽度/深度比至少为1∶12。因此,对于小比例而言,深度大大地超出平行于所述基片表面的侧距离的凹陷也是可以想象的。而对于较大的比例而言,大致上较为平坦的结构引入到所述基片表面中,然而所述基片表面依然得以构造,以使得其具有有效的光输出。优选地,从生产技术方面以及它们的效率方面来说,有利的宽度/深度比可在1∶3到3∶1的范围内构造。
为了能够应用抛物柱面镜效应,所述表面结构的外形必须具有特殊的几何形状。有益地,在所述光电模块或太阳能收集器中,所述凹陷形成为半球形、金字塔形或具有多边形表面。这样的几何形状确保了格外有效的光输出,并且可通过滚压方法完美地产生。
优选地,所述表面结构的凹陷可通过使用结构工作辊加以滚压而得以生产,所述工作辊具有表面,该表面包括球形帽状的、金字塔形的或多边形的隆起。所述工作辊表面形成被引入到带状物或薄片表面中的精细结构的底片像。
有益地,所述结构可随机地或有规律地周期性地形成。在有规律的周期性结构的情况下,在太阳能吸收器层下面,没有重叠结构的、或是仅有略微重叠结构的平坦的岛状区域能够特别有效地利用太阳光,而在周期结构之间,例如,可能存在有适合于电导体轨道或是其它结构组件的光滑区域。
在本发明的一个有益构造中,所述将要被构造的带状物表面可为空白的。优选地,电镀、PVD、CVD方法、等离子体聚合或湿化学涂布可在滚压之后被用作涂布方法。
有益地,所述外形空隙因数λp可以在0.5到0.8的范围内。有益地,所述空间空隙因数λr可以在0.49到0.8的范围内。
本发明典型的实施方式通过示意图以及进一步的附图更详细地说明,其中:
图1示出了在基片表面上进行的滚压过程的示意图;
图2示出了包括有开放结构的经过滚压的基片表面;和
图3示出了处于起始状态的未发生形变的基片表面。
在所有的附图中,彼此相对应的元件配有相同的附图标记。
图1示出了金属基片1的表面上的滚压过程的示意图。该表面构造为开放结构。为了形成开放结构,单个凹陷12在金属基片1上得以滚压,在未变形的表面11上仍然具有平滑的外观。在所述使用的工作辊2的辊体22上,球形帽21布置于表面上,所述球形帽21穿透所述金属基片1的表面。例如,这些球形帽21的尺寸相同,以至于它们在所述基片表面生成了均匀的底片像结构。然而,作为一种替代方案,所述工作辊表面的结构尺寸可能有更大地变化并且也可采用其它的形状,例如,金字塔形或是圆柱形。在任何情况下都涉及包括有或多或少的初始表面的平滑的未变形的原始背景并且通过滚压形成于基片表面的精细结构。这样的结构能够通过与抛物柱面镜相类似的方式在表面上集中入射光。
图2示出了包括有开放结构的经过滚压的基片表面。在滚压方向中,在本视图中从左到右的方向,所述凹陷12得以稍微地拉伸。这一现象的发生或归因于在滚压过程中增加了的带状物的张力;或是归因于包括有在滚压方向上得以伸长的结构的工作辊表面。在这种情况下,所述凹陷形成于开放结构中,其侧距离平行于带状物表面延伸,并且具有大约为2∶1的长/宽比;所述长度在滚压方向上得以测量,在图2中为自左而右的方向;所述宽度则在垂直于滚压方向的方向上得以测量,在图2中为自上而下的方向。平滑且未变形的表面11剩余的部分在所述凹陷12之间的所述金属基片1的表面上仍然可见。
为了进行比较,图3示出了在滚压之前处于原始状态的金属基片1的未变形的表面。在该表面上,还没有滚压凹陷,而仅能看出平行延伸的精磨沟槽。
参考附图标记说明
1金属基片
11未变形的表面
12凹陷
2工作辊
21工作辊表面的球形帽
22辊体
Claims (20)
1.一种具有光敏层的光电模块,其应用于由金属带状物或由所述金属带状物制的薄片所组成的经过滚压的金属基片上,所述金属带状物由铜或铜合金带状物、铝或铝合金带状物、铁或铁合金带状物、钛或钛合金带状物、镍或镍合金带状物或不锈钢带状物构成,其特征在于,
-所述金属基片包括有表面结构,所述表面结构的粗糙度在Ra=0.01-5μm和/或Rz=0.01-20μm的范围内;
-所述表面结构包括有凹陷,所述凹陷具有0.3-300μm的最小侧距离;以及
-所述凹陷设置于开放结构中,并具有平行于带状物表面延伸的侧距离,所述带状物表面的长/宽比从3∶1到1∶3,所述长度在滚压方向上测量,而所述宽度则在垂直于滚压方向的方向上测量;
-其中,外形间隙因数λp落在0.25到0.85的范围内。
2.如权利要求1所述的光电模块,其特征在于,用于调节热膨胀的补偿层和/或扩散壁垒层应用于所述金属基片上
3.如权利要求2所述的光电模块,其特征在于,所述补偿层或所述扩散壁垒层由TiC、WC、TiN、TiNOx、TiOx、Mo、Cr、Co、NiCo、Ni或镍铁合金和/或它们的组合。
4.如权利要求2或3所述的光电模块,其特征在于,所述补偿层或所述扩散壁垒层的厚度为100nm到100μm。
5.如权利要求1-4中任一项权利要求所述的光电模块,其特征在于,电绝缘涂层被应用于所述金属基片、所述补偿层或所述扩散壁垒层上。
6.如权利要求5所述的光电模块,其特征在于,所述电绝缘涂层为至少一层陶瓷层,所述陶瓷层由Al2O3、ZrO2、SiO2、SiOH、Si3N4、AlN组成或这些层的组合。
7.如权利要求5或6所述的光电模块,其特征在于,所述电绝缘涂层的厚度为100nm到100μm,优选地为500nm到100μm之间。
8.如权利要求7所述的光电模块,其特征在于,钼层被应用于所述电绝缘涂层上和/或未设置光敏层的带状物或薄板的背面。
9.如权利要求8所述的光电模块,其特征在于,所述钼层的层厚在3μm到200μm之间。
10.如权利要求8或9所述的光电模块,其特征在于,铜铟硒或铜铟镓硒层包括由ZnO构成的相对应的前侧接触层以及由CdS构成的中间层,它们通过适当的构造布置于预先确定的层结构中以形成整体地彼此相互连接的CIS太阳能电池,并可应用作钼层上的光敏涂层。
11.如权利要求10所述的光电模块,其特征在于,管材和通道由铜或铜合金构成,用于冷却被熔焊、焊接或胶接在所述金属基片的背面上的电池。
12.一种具有太阳能吸收器的太阳能收集器,其包括由金属带状物或由金属带状物制的的金属薄片所构成的经过滚压的金属基片,所述金属带状物由铜或铜合金带状物、铝或铝合金带状物、铁或铁合金带状物、钛或钛合金带状物、镍或镍合金带状物或不锈钢带状物构成,其特征在于,
-收集器层应用于其上的金属基片包括表面结构,所述表面结构的粗糙度在Ra=0.01-5μm和/或Rz=0.01-20μm的范围内;
-所述表面结构包括有凹陷,所述凹陷具有0.3-300μm的最小侧距离;以及
-所述凹陷设置于开放结构中,具有平行于带状物表面延伸的侧距离,其长/宽比从3∶1到1∶3,所述长度在滚压方向上测量,而所述宽度则在垂直于滚压方向的方向上测量;
-外形间隙因数λp落在0.25到0.85的范围内。
13.如权利要求1-12中任一项权利要求所述的产品,其特征在于,所述凹陷的宽度/深度比至少为1∶12。
14.如权利要求1-13中任一项权利要求所述的产品,其特征在于,所述凹陷形成为半球形、金字塔形或具有多边形表面。
15.如权利要求14所述的产品,其特征在于,所述表面结构的凹陷通过使用结构工作辊加以滚压而得以生产,所述工作辊的表面包括球形帽状的、金字塔形的或多边形的隆起。
16.如权利要求1-15中任一项权利要求所述的产品,其特征在于,所述结构可随机地或有规律地周期性地形成。
17.如权利要求1-16中任一项权利要求所述的产品,其特征在于,所述得以成型的带状物表面为空白的。
18.如权利要求1-17中任一项权利要求所述的产品,其特征在于,在滚压之后,采用电镀、PVD、CVD方法、等离子体聚合或湿化学涂布作为涂布方法。
19.如前述任一项权利要求所述的产品,其特征在于,所述外形空隙因数λp在0.5到0.8的范围内。
20.如前述任一项权利要求所述的产品,其特征在于,所述空间空隙因数λr在0.49到0.8的范围内。
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DE102010007841.7 | 2010-02-11 | ||
DE102010007841A DE102010007841A1 (de) | 2010-02-11 | 2010-02-11 | Photovoltaikmodul mit einer photoaktiven Schicht oder Solarkollektor mit einem Solarabsorber |
PCT/EP2011/000582 WO2011098255A2 (de) | 2010-02-11 | 2011-02-08 | Photovoltaikmodul mit einer photoaktiven schicht oder solarkollektor mit einem solarabsorber |
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CN102754216A true CN102754216A (zh) | 2012-10-24 |
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CN2011800087866A Pending CN102754216A (zh) | 2010-02-11 | 2011-02-08 | 具有光敏层的光电模块或具有太阳能吸收器的太阳能收集器 |
Country Status (5)
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US (1) | US20120298183A1 (zh) |
EP (1) | EP2533915A2 (zh) |
CN (1) | CN102754216A (zh) |
DE (1) | DE102010007841A1 (zh) |
WO (1) | WO2011098255A2 (zh) |
Cited By (1)
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CN105483632A (zh) * | 2015-12-24 | 2016-04-13 | 中国科学院兰州化学物理研究所 | 具有双陶瓷结构的高温太阳能选择性吸收涂层及其制备方法 |
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DE102010007840A1 (de) * | 2010-02-11 | 2011-08-11 | Wieland-Werke AG, 89079 | Elektromechanisches Bauelement oder Gleitelement |
CN104073677B (zh) | 2013-03-27 | 2017-01-11 | 株式会社神户制钢所 | Led的引线框用铜合金板条 |
DE102013107910A1 (de) * | 2013-07-24 | 2015-01-29 | Lilas Gmbh | Verfahren zur Herstellung einer Solarzelle, insbesondere einer Silizium-Dünnschicht-Solarzelle |
DE102014113390A1 (de) * | 2014-09-17 | 2016-03-17 | Erk Eckrohrkessel Gmbh | Wärmeübertragungseinrichtung, Verfahren zur Übertragung von Wärme, Photovoltaikanlage, Plattenwärmeübertrager, Verfahren zur Erzeugung elektrischer Energie und Verfahren zur Bereitstellung von Wärme |
KR20200033893A (ko) | 2017-07-21 | 2020-03-30 | 노벨리스 인크. | 저압 압연으로 금속 기재의 평탄도를 제어하기 위한 시스템 및 방법 |
DE102020124488A1 (de) | 2020-09-21 | 2022-03-24 | Thyssenkrupp Steel Europe Ag | Blechbauteil und Verfahren zu seiner Herstellung |
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EP2533915A2 (de) | 2012-12-19 |
WO2011098255A3 (de) | 2012-06-28 |
US20120298183A1 (en) | 2012-11-29 |
DE102010007841A1 (de) | 2011-08-11 |
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