CN102751182B - Method for manufacturing semiconductor - Google Patents
Method for manufacturing semiconductor Download PDFInfo
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- CN102751182B CN102751182B CN201110095459.0A CN201110095459A CN102751182B CN 102751182 B CN102751182 B CN 102751182B CN 201110095459 A CN201110095459 A CN 201110095459A CN 102751182 B CN102751182 B CN 102751182B
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- wafer
- ion implantation
- batch
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- illusory
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 235000012431 wafers Nutrition 0.000 claims abstract description 95
- 238000005468 ion implantation Methods 0.000 claims abstract description 55
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000002513 implantation Methods 0.000 description 6
- 230000007812 deficiency Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The invention provides a method for manufacturing a semiconductor. In a batch ion implantation technology, photoresist (PR) patterns which are the same with patterns on wafers to be performed by ion implantation are formed on dummy wafers. Thus, a PR transmission ratio of the dummy wafers is the same with that of the wafers to be performed by ion implantation, so a total PR transmission ratio of each wafer in a same batch can be maintained stable and uniform, making pressure compensation on each wafer keep stable and be controlled conveniently, thereby making a final batch implanted dose maintain stable and uniform.
Description
Technical field
The present invention relates to a kind of semiconductor making method, especially, relate to a kind of semiconductor making method adopting illusory wafer to carry out batch ion injection.
Background technology
Ion implantation (implantation) is the important process step in semiconductor fabrication, in order to reduce manufacturing cost, reduce the flow process used time and make performance of semiconductor device parameter have good consistency, industry adopts batch ion injection technology usually.In batch ion injection technology, multiple wafer carrying out ion implantation that needs is placed in same flood chamber, carries out ion implantation in bulk, and for 12 inches of production lines, ion implantation device can carry out batch ion injection to 13 wafer.If the number of wafers for carrying out ion implantation is not enough to gather into a batch, then need to introduce one or more illusory wafer (dummy wafer), total number of wafers is made to reach the number of a batch, like this, the batch ion of different batches injects and can obtain good process consistency.In addition; consider and the wafer for carrying out ion implantation has established photoetching offset plate figure usually; and photoresist degasification (outgas of PR) can have an impact to ion implantation dosage final on wafer; this has batch ion injection technology affects more significantly; therefore; in order to make the implantation dosage on each wafer of each batch stable, even, consistent, need to introduce pressure compensation (pressure compensation).But, traditional illusory wafer is bare silicon wafer (bare wafer), see accompanying drawing 2b, there is not photoetching offset plate figure in it, thus illusory wafer is not identical with the photoresist transfer ratio (PR transmission ratio) of the wafer for carrying out ion implantation, the pressure compensation numerical value at each wafer place is not identical, this makes pressure compensation become difficulty and is difficult to obtain the even results of expection, and then, inevitably final implantation dosage is had an impact, make the ion implantation dosage of each wafer inconsistent.Therefore, need to develop a kind of new batch ion injection technology, to make the implantation dosage of each wafer in each batch and same batch stable, consistent.
Summary of the invention
The invention provides a kind of semiconductor making method, introduce the illusory wafer being formed with photoetching agent pattern, thus improve the uniformity of batch ion injection technology.
The invention provides a kind of semiconductor making method, comprising:
Wafer for carrying out ion implantation is provided, the described wafer for carrying out ion implantation forms the first photoetching agent pattern;
Illusory wafer is provided;
Described wafer for carrying out ion implantation and described illusory wafer being placed in ion implantation device, carrying out batch ion injection;
Wherein:
Before carrying out described batch ion injection, described illusory wafer forms the second photoetching agent pattern, described second photoetching agent pattern is identical with described first photoetching agent pattern.
In the method for the invention, the number of illusory wafer according to the batch processing capabilities setting of described ion implantation device, makes the number sum of described wafer for carrying out ion implantation and described illusory wafer reach the number of a batch of described ion implantation device; The batch processing ability of described ion implantation device is 13 ~ 17 wafers.In the method for the invention, described product wafer and described illusory diameter wafer are 12 inches, and the batch processing ability of ion implantation device is 13 wafers.In the method for the invention, described product wafer and described illusory diameter wafer are 8 inches, and the batch processing ability of ion implantation device is 17 wafers.
The invention has the advantages that: in batch ion injection technology, on illusory wafer formed with for carrying out photoetching agent pattern identical on the wafer of ion implantation, like this, illusory wafer is identical with the photoresist transfer ratio (PR transmission ratio) of the wafer for carrying out ion implantation, therefore the total photoresist transfer ratio of each wafer in same batch can keep stable with consistent, this makes required pressure compensation keep stable at each wafer place, be convenient to control, thus make final batch implantation dosage can keep stable with consistent.
Accompanying drawing explanation
Fig. 1 invention introduces the batch ion injection technology of illusory wafer;
Fig. 2 a is for carrying out the wafer of ion implantation;
The illusory wafer that Fig. 2 b is naked;
Fig. 2 c is formed with the illusory wafer of photoetching agent pattern.
Embodiment
Feature and the technique effect thereof of technical solution of the present invention is described in detail in conjunction with schematic embodiment referring to accompanying drawing.
First, the wafer 1 for carrying out ion implantation being provided, the wafer 1 for carrying out ion implantation forming the first photoetching agent pattern 11, see accompanying drawing 2a.In batch ion injection technology, multiple wafer 1 for carrying out ion implantation is placed in same ion implantation device, carries out ion implantation in bulk.Usually, the batch process chamber that ion implantation device adopts can hold 13 ~ 17 wafers, this determined by brilliant diameter of a circle, such as, when adopting 12 inch wafer, the batch processing ability of ion implantation device is 13 wafers, and when adopting 8 inch wafer, the batch processing ability of ion implantation device is 17 wafers.If for carry out ion implantation wafer 1 number deficiency to gather into a batch, then need to introduce one or more illusory wafer 2, total number of wafers is made to reach the number of a batch, see Fig. 1, this is that the batch ion that invention introduces illusory wafer injects schematic diagram, wherein, for carrying out the number deficiency of the wafer 1 of ion implantation to gather into a batch, therefore, the loading plate of injecting chamber arranges some illusory wafers 2, make total number of wafers reach a batch.Like this, the batch ion of different batches injects and can obtain good process consistency.Meanwhile, method of the present invention does not limit to the ion implantation device being applied to a certain specific model; As long as possess the ion implantation device of polycrystalline circle batch processing ability, all can implement method of the present invention, and stable, consistent ion implantation effect can be obtained.
Illusory wafer 2 is then provided, illusory wafer 2 forms the second photoetching agent pattern 1, second photoetching agent pattern 12 identical with the first photoetching agent pattern 11, see accompanying drawing 2c.According to the batch processing ability of adopted ion implantation device, the number of required illusory wafer 2 is set, with the number making total number of wafers reach a batch.
Then, by number be a batch be placed in ion implantation device for the wafer 1 and illusory wafer 2 carrying out ion implantation, carry out batch ion injection, see accompanying drawing 1.
In the method for the invention, due on illusory wafer 2 formed with for carrying out photoetching agent pattern identical on the wafer 1 of ion implantation, this makes illusory wafer 2 identical with the photoresist transfer ratio of the wafer 1 for carrying out ion implantation, and the photoresist transfer ratio that therefore each wafer of batch ion injection is total can keep stable with consistent; So, for photoresist degasification, the pressure compensation of required introducing is identical and stable on each wafer, and therefore pressure compensated control is more effectively simple, thus make final batch implantation dosage can keep stablizing, consistent and be easy to control.
Although the present invention is described with reference to above-mentioned exemplary embodiment, those skilled in the art can know without the need to departing from the scope of the invention and make various suitable change and equivalents to technical solution of the present invention.In addition, can be made by disclosed instruction and manyly may be suitable for the amendment of particular condition or material and not depart from the scope of the invention.Therefore, object of the present invention does not lie in and is limited to as realizing preferred forms of the present invention and disclosed specific embodiment, and disclosed device architecture and manufacture method thereof will comprise all embodiments fallen in the scope of the invention.
Claims (5)
1. a semiconductor making method, comprising:
Wafer for carrying out ion implantation is provided, the described wafer for carrying out ion implantation forms the first photoetching agent pattern;
Illusory wafer is provided;
Described wafer for carrying out ion implantation and described illusory wafer being placed in ion implantation device, carrying out batch ion injection;
It is characterized in that:
Before carrying out described batch ion injection, described illusory wafer forms the second photoetching agent pattern, described second photoetching agent pattern is identical with described first photoetching agent pattern, and the total photoresist transfer ratio of each wafer that described batch ion is injected keeps stable with consistent.
2. semiconductor making method according to claim 1, it is characterized in that, the number of illusory wafer according to the batch processing capabilities setting of described ion implantation device, makes the number sum of described wafer for carrying out ion implantation and described illusory wafer reach the number of a batch of described ion implantation device.
3. semiconductor making method according to claim 2, is characterized in that, the batch processing ability of described ion implantation device is 13 ~ 17 wafers.
4. semiconductor making method according to claim 3, is characterized in that, described wafer for carrying out ion implantation and described illusory diameter wafer are 12 inches, and the batch processing ability of ion implantation device is 13 wafers.
5. semiconductor making method according to claim 3, is characterized in that, described wafer for carrying out ion implantation and described illusory diameter wafer are 8 inches, and the batch processing ability of ion implantation device is 17 wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110095459.0A CN102751182B (en) | 2011-04-17 | 2011-04-17 | Method for manufacturing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110095459.0A CN102751182B (en) | 2011-04-17 | 2011-04-17 | Method for manufacturing semiconductor |
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| Publication Number | Publication Date |
|---|---|
| CN102751182A CN102751182A (en) | 2012-10-24 |
| CN102751182B true CN102751182B (en) | 2015-01-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110095459.0A Active CN102751182B (en) | 2011-04-17 | 2011-04-17 | Method for manufacturing semiconductor |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113539803A (en) * | 2021-06-28 | 2021-10-22 | 上海华虹宏力半导体制造有限公司 | Batch type ion implantation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438679A (en) * | 2002-02-14 | 2003-08-27 | 株式会社日立制作所 | Method for making semiconductor integrated circuit device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005098A (en) * | 2003-06-11 | 2005-01-06 | Sumitomo Eaton Noba Kk | Ion implanter and its control method |
| US7001856B2 (en) * | 2003-10-31 | 2006-02-21 | Infineon Technologies Richmond, Lp | Method of calculating a pressure compensation recipe for a semiconductor wafer implanter |
| KR100673006B1 (en) * | 2005-07-15 | 2007-01-24 | 삼성전자주식회사 | Apparatus for implanting wafers with ions |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1438679A (en) * | 2002-02-14 | 2003-08-27 | 株式会社日立制作所 | Method for making semiconductor integrated circuit device |
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| CN102751182A (en) | 2012-10-24 |
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Owner name: BEIJING YANDONG MICROELECTRNIC CO.,LTD. Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20150624 |
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Effective date of registration: 20150624 Address after: 100015 Beijing city Chaoyang District Dongzhimen West eight room Wanhong No. 2 West Street Patentee after: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road 3# Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Address after: 100020 West eight rooms, dongzhimenwai, Chaoyang District, Beijing Patentee after: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. Address before: 100015 Beijing city Chaoyang District Dongzhimen West eight room Wanhong No. 2 West Street Patentee before: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. |
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