CN103594311A - Method for introducing punctiform ion beam injecting machine into mass production - Google Patents
Method for introducing punctiform ion beam injecting machine into mass production Download PDFInfo
- Publication number
- CN103594311A CN103594311A CN201310566540.1A CN201310566540A CN103594311A CN 103594311 A CN103594311 A CN 103594311A CN 201310566540 A CN201310566540 A CN 201310566540A CN 103594311 A CN103594311 A CN 103594311A
- Authority
- CN
- China
- Prior art keywords
- wafer
- square resistance
- beam implanter
- ion beam
- spot beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a method for introducing a punctiform ion beam injecting machine into mass production. The method comprises the following steps: step 1, a standard wafer is obtained through a banding ion beam injecting machine, and square resistance is further obtained, wherein the matching coefficient of the wafer is 1.0; step 2, a first test region, a second test region and a third test region are obtained on a tested wafer by means of a segmentation injection method through the punctiform ion beam injecting machine, and square resistance is further obtained, wherein the dose matching coefficient of the first test region is 1.0 minus a, the matching coefficient of the second test region is 1.0, and the matching coefficient of the third test region is 1.0 plus b; step 3, the square resistance of the standard wafer and the square resistance of the tested wafer are compared, and the matching coefficient obtained when the square resistance of the tested wafer and the square resistance of the standard wafer are the same is used as the dose matching coefficient of the punctiform ion beam injecting machine. According to the method for introducing the punctiform ion beam injecting machine into mass production, the rate of overall equipment utilization is increased, the number of wafers used in the dose matching process is reduced, and production cost is lowered; besides, by means of the method for introducing the punctiform ion beam injecting machine into mass production, obtained products are stable in performance and high in substitutability.
Description
Technical field
The present invention relates to semiconductor device processing technology field, relate in particular to a kind of method that spot beam implanter is imported to volume production.
Background technology
Implantation is flourish and obtain a kind of material surface improvement technology of extensive use in the world in the last few years, its principle is: the ion beam that use-case is 100KeV magnitude as energy incides in material, make atom in ion beam and material or molecule generation series of physical with chemical interaction, incident ion is off-energy gradually, finally rest in material, and the surface composition, structure and the performance that cause material change, thereby optimize the performance of material surface, or obtain some new excellent properties.
In manufacture of semiconductor, the mode of for example, introducing controlled quantity impurity in Chang Yixiang substrate (silicon-based substrate) changes its electric property.In fact, Implantation has a wide range of applications in modern wafer manufacture process.
Ion implantor is usually used to inject ion in Semiconductor substrate.Ion implantor generally comprise produce ion beam ion source, from ion beam, select particular types ion mass analyzer, make the ion beam of the selected quality by vacuum chamber point to the device that is supported on the target substrate on substrate holder.The ion implantation apparatus of described routine can, referring to the disclosed ion implantor of Chinese patent CN1667791A, not repeat them here.
The pattern of Implantation can be divided into again ribbon ion beam (Ribbon Beam) injection and point-like (Spot Beam) ion beam injects.Traditionally, in high current ion implanter field, described ribbon ion beam implanter has occupied the position of mainstream of 300nm wafer factory, and almost all over products is all to debug and volume production based on ribbon ion beam implanter.On the other hand, spot beam implanter is introduced into wafer foundry just gradually.
But, because there is certain difference in the injection mode of described ribbon ion beam implanter and spot beam implanter, so in actual use, for identical product condition, between described ribbon ion beam implanter and described spot beam implanter, there is inevitable implantation dosage mismatch.In order to improve utilization rate of equipment and installations, guarantee production quality, conventionally need to carry out the dosage coupling of described ribbon ion beam implanter and described spot beam implanter.
As those skilled in the art, hold intelligibly, existing method is when carrying out the dosage coupling of described ribbon ion beam implanter and described spot beam implanter, the product condition that arbitrary needs mate all needs multi-disc wafer, it is high that a large amount of coupling work certainly will make the total burn-off of described wafer, increases enterprise's production cost.How to improve utilization rate of equipment and installations, reduce the usage quantity of wafer in dosage matching process, and further reduce production costs and become one of this area technical problem urgently to be resolved hurrily.
Therefore the problem existing for prior art, this case designer relies on the industry experience for many years of being engaged in, and active research improvement, so there has been a kind of method that spot beam implanter is imported to volume production of the present invention.
Summary of the invention
The present invention be directed in prior art, described injection board overall utilization rate is not high, and it is excessive that the dosage coupling of being undertaken carrying out when ion beam injects by described spot beam implanter expends wafer number, and cause the defects such as enterprise's production cost increase that a kind of method that spot beam implanter is imported to volume production is provided.
For realizing the present invention's object, the invention provides a kind of method that spot beam implanter is imported to volume production, the described method by spot beam implanter importing volume production comprises:
Execution step S1: the matching factor of default described ribbon ion beam implanter is 1.0, by described ribbon ion beam implanter, obtaining matching factor is 1.0 standard wafer, and further obtain through injection and annealing process after the square resistance of described standard wafer;
Execution step S2: by described spot beam implanter, on described test wafer, adopt and cut apart injection method and obtain the first test section that dosage matching factor is (1.0-a), the second test section that matching factor is 1.0, the 3rd test section that matching factor is (1.0+b), and further obtain through injection and annealing process after the square resistance of described test wafer, wherein, 0 < a < 1,0 < b < 1;
Execution step S3: the square resistance of the square resistance of more described test wafer and described standard wafer, and to take the square resistance of described test wafer and the square resistance of the described standard wafer matching factor while equating be the dosage matching factor that described spot beam is injected board.
Alternatively, the square resistance of described described test wafer after injection and annealing process adopts 49 dotted line scan modes of cut-off rule normal direction to collect.
Alternatively, in described spot beam implanter, the implantation dosage of the first test section of described test wafer is (1.0-a) times of implantation dosage in described ribbon ion beam implanter; The implantation dosage of the second test section of described test wafer is 1.0 times of implantation dosage in described ribbon ion beam implanter; The implantation dosage of the 3rd test section of described test wafer is (1.0+b) times of implantation dosage in described ribbon ion beam implanter.
Alternatively, described a=0.1, b=0.1.
In sum, the present invention is by described spot beam implanter, on described test wafer, adopt and cut apart injection method and obtain the first test section that dosage matching factor is (1.0-a), matching factor is the second test section of 1.0, matching factor is the 3rd test section of (1.0+b), 0 < a < 1, 0 < b < 1, and further by 49 dotted line scan modes of cut-off rule normal direction obtain through injection and annealing process after the square resistance of described test wafer, afterwards with the square resistance comparison of the standard wafer of described ribbon ion beam implanter, obtain the dosage matching factor of described spot beam implanter, and then importing volume production, not only improve integral device utilance, reduce the wafer use amount in dosage matching process, reduce production costs, and, by the inventive method, described spot beam implanter is imported to volume production, the properties of product that obtain are stable, substituting strong.
Accompanying drawing explanation
Figure 1 shows that the present invention imports spot beam implanter the flow chart of the method for volume production;
Figure 2 shows that the matching factor that obtains by spot beam implanter of the present invention and the graph of a relation between square resistance;
Figure 3 shows that the contour map of the square resistance obtaining by spot beam implanter of the present invention;
Figure 4 shows that by spot beam implanter of the present invention the square resistance that adopts 49 dotted line scan modes to obtain.
Embodiment
By describe in detail the invention technology contents, structural feature, reached object and effect, below in conjunction with embodiment and coordinate accompanying drawing to be described in detail.
Refer to Fig. 1, Figure 1 shows that the present invention imports spot beam implanter the flow chart of the method for volume production.The described method that spot beam implanter is imported to volume production, comprising:
Execution step S1: the matching factor of default described ribbon ion beam implanter is 1.0, by described ribbon ion beam implanter, obtaining matching factor is 1.0 standard wafer, and further obtain through injection and annealing process after the square resistance of described standard wafer;
Execution step S2: by described spot beam implanter, on described test wafer, adopt and cut apart injection method and obtain the first test section that dosage matching factor is (1.0-a), the second test section that matching factor is 1.0, the 3rd test section that matching factor is (1.0+b), and the 49 dotted line scan modes that further adopt cut-off rule normal direction are obtained the square resistance of the described test wafer after injection and annealing process, wherein, 0 < a < 1,0 < b < 1;
Execution step S3: the square resistance of the square resistance of more described test wafer and described standard wafer, and to take the square resistance of described test wafer and the square resistance of the described standard wafer matching factor while equating be the dosage matching factor that described spot beam is injected board, wherein, when collecting the square resistance of separating injection method injection, adopt 49 dotted line scan modes of cut-off rule normal direction.
In the present invention, on described test wafer, adopt and cut apart injection method and obtain the first test section that dosage matching factor is (1.0-a), the second test section that matching factor is 1.0, the 3rd test section that matching factor is (1.0+b).That is,, in described spot beam implanter, the implantation dosage of the first test section of described test wafer is (1.0-a) times of implantation dosage in described ribbon ion beam implanter; The implantation dosage of the second test section of described test wafer is 1.0 times of implantation dosage in described ribbon ion beam implanter; The implantation dosage of the 3rd test section of described test wafer is (1.0+b) times of implantation dosage in described ribbon ion beam implanter; Wherein, 0 < a < 1,0 < b < 1.
In order to disclose more intuitively the present invention's technical scheme, and highlight the present invention's beneficial effect, out of the ordinary in a=0.1, b=0.1 is that example is set forth, and concrete data, only for enumerating, should not be considered as the restriction to technical solution of the present invention.
Refer to Fig. 2, Fig. 3, Fig. 4, and in conjunction with consulting Fig. 1, Figure 2 shows that the matching factor that obtains by spot beam implanter of the present invention and the graph of a relation between square resistance.Figure 3 shows that the contour map of the square resistance obtaining by spot beam implanter of the present invention.Figure 4 shows that by spot beam implanter of the present invention the square resistance that adopts 49 dotted line scan modes to obtain.The described method that spot beam implanter is imported to volume production, comprising:
Execution step S1 ': the matching factor of default described ribbon ion beam implanter is 1.0, by described ribbon ion beam implanter, obtaining matching factor is 1.0 standard wafer, and further obtain through injection and annealing process after the square resistance of described standard wafer;
Wherein, in the present invention's embodiment, by described ribbon ion beam implanter, obtaining matching factor is 1.0 standard wafer, and the square resistance of described standard wafer after Implantation and annealing process is 99.8 Ω/.
Execution step S2 ': by described spot beam implanter, on described test wafer, adopt and cut apart injection method and obtain the 3rd test section that dosage matching factor is the first test section of 0.9, matching factor is 1.0 the second test section, matching factor are 1.1, and further adopt 49 dotted line scan modes of cut-off rule normal direction obtain through injection and annealing process after the square resistance of described test wafer;
As the specific embodiment of the present invention, nonrestrictive enumerating, with a=0.1, b=0.1 is that example is set forth.Wherein, in described spot beam implanter, the square resistance of the first test section that described dosage match parameter is 0.9 after Implantation and annealing process is 103.4 Ω/; The square resistance of the second test section that described dosage match parameter is 1.0 after Implantation and annealing process is 93.8 Ω/; The 3rd square resistance of test section after Implantation and annealing process that described dosage match parameter is 1.1 is 86 Ω/.
More specifically, in described spot beam implanter, the implantation dosage of the first test section of described test wafer be in described ribbon ion beam implanter implantation dosage 90%; The implantation dosage of the second test section of described test wafer be in described ribbon ion beam implanter implantation dosage 100%; The implantation dosage of the 3rd test section of described test wafer be in described ribbon ion beam implanter implantation dosage 110%.
Wherein, the square resistance of the test wafer in the square resistance of the standard wafer in described ribbon ion beam implanter and described spot beam implanter is as shown in table 1.
The square resistance of table 1 standard wafer and the square resistance of test wafer
Execution step S3 ': the square resistance of the square resistance of more described test wafer and described standard wafer, and to take the square resistance of described test wafer and the square resistance of the described standard wafer matching factor while equating be the dosage matching factor that described spot beam is injected board, wherein, when collecting the square resistance of separating injection method injection, adopt 49 dotted line scan modes of cut-off rule normal direction.
As shown in Figure 2, when described dosage matching factor is 0.94, the square resistance of described test wafer equates with the square resistance of described standard wafer.That is, the dosage matching factor of described spot beam implanter is 0.94.
As shown in Figure 3, when collecting the square resistance of separating injection method injection, adopt 49 dotted line scan modes of cut-off rule normal direction.Span is 2～16 points, 32～43 points, and effectively filters noise spot.In span, be that dosage match parameter that 2～16 corresponding average square resistances are spot beam implanter is the square resistance of 0.9 o'clock; In span, be that dosage match parameter that 32～43 corresponding average square resistances are spot beam implanter is the square resistance of 1.1 o'clock.
In sum, the present invention is by described spot beam implanter, on described test wafer, adopt and cut apart injection method and obtain the first test section that dosage matching factor is (1.0-a), matching factor is the second test section of 1.0, matching factor is the 3rd test section of (1.0+b), 0 < a < 1, 0 < b < 1, and further by 49 dotted line scan modes of cut-off rule normal direction obtain through injection and annealing process after the square resistance of described test wafer, afterwards with the square resistance comparison of the standard wafer of described ribbon ion beam implanter, obtain the dosage matching factor of described spot beam implanter, and then importing volume production, not only improve integral device utilance, reduce the wafer use amount in dosage matching process, reduce production costs, and, by the inventive method, described spot beam implanter is imported to volume production, the properties of product that obtain are stable, substituting strong.
Those skilled in the art all should be appreciated that, in the situation that not departing from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thereby, if when any modification or modification fall in the protection range of appended claims and equivalent, think that the present invention contains these modifications and modification.
Claims (4)
1. spot beam implanter is imported to a method for volume production, it is characterized in that, the described method by spot beam implanter importing volume production comprises:
Execution step S1: the matching factor of default described ribbon ion beam implanter is 1.0, by described ribbon ion beam implanter, obtaining matching factor is 1.0 standard wafer, and further obtain through injection and annealing process after the square resistance of described standard wafer;
Execution step S2: by described spot beam implanter, on described test wafer, adopt and cut apart injection method and obtain the first test section that dosage matching factor is (1.0-a), the second test section that matching factor is 1.0, the 3rd test section that matching factor is (1.0+b), and further obtain through injection and annealing process after the square resistance of described test wafer, wherein, 0 < a < 1,0 < b < 1;
Execution step S3: the square resistance of the square resistance of more described test wafer and described standard wafer, and to take the square resistance of described test wafer and the square resistance of the described standard wafer matching factor while equating be the dosage matching factor that described spot beam is injected board.
2. the method that spot beam implanter is imported to volume production as claimed in claim 1, is characterized in that, the square resistance of described described test wafer after injection and annealing process adopts 49 dotted line scan modes of cut-off rule normal direction to collect.
3. as claimed in claim 1 by the method for spot beam implanter importing volume production, it is characterized in that, in described spot beam implanter, the implantation dosage of the first test section of described test wafer is (1.0-a) times of implantation dosage in described ribbon ion beam implanter; The implantation dosage of the second test section of described test wafer is 1.0 times of implantation dosage in described ribbon ion beam implanter; The implantation dosage of the 3rd test section of described test wafer is (1.0+b) times of implantation dosage in described ribbon ion beam implanter.
4. the method that spot beam implanter is imported to volume production as claimed in claim 1, is characterized in that described a=0.1, b=0.1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566540.1A CN103594311B (en) | 2013-11-13 | 2013-11-13 | A kind of method that spot beam implanter is imported to volume production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566540.1A CN103594311B (en) | 2013-11-13 | 2013-11-13 | A kind of method that spot beam implanter is imported to volume production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103594311A true CN103594311A (en) | 2014-02-19 |
| CN103594311B CN103594311B (en) | 2016-05-11 |
Family
ID=50084405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310566540.1A Active CN103594311B (en) | 2013-11-13 | 2013-11-13 | A kind of method that spot beam implanter is imported to volume production |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103594311B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900499A (en) * | 2015-04-30 | 2015-09-09 | 上海华力微电子有限公司 | Dosage matching method of ion implanter |
| CN105448757A (en) * | 2014-08-14 | 2016-03-30 | 北大方正集团有限公司 | Ion implantation-based technological parameter matching method and device |
| CN112687509A (en) * | 2020-12-25 | 2021-04-20 | 上海华力集成电路制造有限公司 | Method for improving precision of ion implantation machine |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5512818A (en) * | 1994-03-31 | 1996-04-30 | At&T Corp. | Voltage proportional replication device using magnetoresistive sensing elements |
| JPH1092957A (en) * | 1996-09-19 | 1998-04-10 | Toshiba Corp | Manufacture of semiconductor device |
| CN101308763A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Matching method implementing ion injection dose and energy on wafer |
-
2013
- 2013-11-13 CN CN201310566540.1A patent/CN103594311B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5512818A (en) * | 1994-03-31 | 1996-04-30 | At&T Corp. | Voltage proportional replication device using magnetoresistive sensing elements |
| JPH1092957A (en) * | 1996-09-19 | 1998-04-10 | Toshiba Corp | Manufacture of semiconductor device |
| CN101308763A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Matching method implementing ion injection dose and energy on wafer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448757A (en) * | 2014-08-14 | 2016-03-30 | 北大方正集团有限公司 | Ion implantation-based technological parameter matching method and device |
| CN105448757B (en) * | 2014-08-14 | 2018-06-26 | 北大方正集团有限公司 | Processing parameter matching method and apparatus based on ion implanting |
| CN104900499A (en) * | 2015-04-30 | 2015-09-09 | 上海华力微电子有限公司 | Dosage matching method of ion implanter |
| CN104900499B (en) * | 2015-04-30 | 2018-12-11 | 上海华力微电子有限公司 | A kind of dosage matching process of ion implantation apparatus |
| CN112687509A (en) * | 2020-12-25 | 2021-04-20 | 上海华力集成电路制造有限公司 | Method for improving precision of ion implantation machine |
| CN112687509B (en) * | 2020-12-25 | 2023-06-13 | 上海华力集成电路制造有限公司 | Method for improving precision of ion implantation machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103594311B (en) | 2016-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103594311A (en) | Method for introducing punctiform ion beam injecting machine into mass production | |
| CN103646892B (en) | Ion implantation angle monitoring method | |
| CN102243670A (en) | Method and system for generating semiconductor process formula | |
| CN102664147A (en) | Method for preparing Hf-based high-K gate dielectric film on GaAs substrate | |
| Alves et al. | Fluid modelling of capacitively coupled radio-frequency discharges: a review | |
| Liao et al. | Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3 | |
| EP2924000A1 (en) | Substrate etching method | |
| CN104599961A (en) | Method for reducing silicon oxynitride surface charges | |
| CN103021777A (en) | Ion implantation method and device | |
| CN105070646A (en) | Preparation method of low-stress silicon nitride film | |
| CN104599996A (en) | Water vapor method of ion implantation machine | |
| CN103839849B (en) | The decision method of ion implanting section problem board | |
| CN102760657A (en) | Method for preparing high K grating medium film and MIS (Management Information System) capacitor on InP (Indium Phosphide) substrate | |
| Amini et al. | Hydrogen impurities and native defects in CdO | |
| CN104900499B (en) | A kind of dosage matching process of ion implantation apparatus | |
| CN105070647B (en) | Epitaxial wafer, extension piece preparation method and semiconductor devices | |
| CN103715073B (en) | Improve the method for ion implantation | |
| CN103295913B (en) | Improve the method for semiconductor device Negative Bias Temperature Instability | |
| CN103972145B (en) | GOI silicon wafer to manufacture method, GOI silicon chip and GOI detection method | |
| CN202432951U (en) | Adjustable detecting tool for battery tabs | |
| CN101996909A (en) | Detection methods for ashing process and electrical characteristics of semiconductor device | |
| CN103531440A (en) | Surface repairing method for back side of wafer | |
| CN101840854B (en) | doping method of semiconductor | |
| CN102968003A (en) | Method for removing photoresist | |
| CN105304751A (en) | Heterogeneous junction solar cell, preparation method thereof and surface passivation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |