CN105575762B - A kind of method that wafer surface defects are removed in wet etching - Google Patents
A kind of method that wafer surface defects are removed in wet etching Download PDFInfo
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- CN105575762B CN105575762B CN201410541481.7A CN201410541481A CN105575762B CN 105575762 B CN105575762 B CN 105575762B CN 201410541481 A CN201410541481 A CN 201410541481A CN 105575762 B CN105575762 B CN 105575762B
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Abstract
The present invention provides a kind of method that wafer surface defects are removed in wet etching, and this method replaces the appropriate phosphoric acid solution containing silicide of processing procedure wafer manufacturing using control wafer, reduces production cost；The silicon nitride film that control wafer carries generates the silicide for inhibiting silicon dioxide etching with phosphatase reaction, effectively prevents due to individually adding the problem of silicide causes sound field cost increase in phosphoric acid；The impurity adhered to after silicon nitride etch in crystal column surface in control wafer is removed using the phosphoric acid and the mixed solution of sulfuric acid that suitably match, and processing procedure crystal column surface impurity is removed with the mixed solution of the phosphoric acid of identical proportioning and sulfuric acid so that the yield of product is effectively reduced in the case of crystal column surface is flawless.
Description
Technical field
The present invention relates to a kind of semiconductor manufacturing process, more particularly to removing wafer surface defects in a kind of wet etching
Method.
Background technology
Silicon nitride is a kind of dielectric material being widely used in silicon wafer process.Silicon nitride film is typically formed in half
In conductor substrate, the barrier layer of silica in etching wafer is typically used as, is formed in the upper surface of silicon dioxide layer.And wet
In method etching process, usually etched with phosphoric acid or corroded the silicon nitride barrier.During corrosion, typically will
Numerous wafer is placed in phosphoric acid solution simultaneously, since the silicon nitride and silica that are in phosphoric acid solution have difference
Etch rate (etching selection ratio), i.e., the rate of phosphoric acid corrosion silicon nitride and silica is different in the similary time.
The factor for influencing the etching selection ratio of silicon nitride and silica in phosphoric acid usually has soaking time, phosphoric acid solution
Temperature and etching reaction slot groove life etc.；It is likely to cause if the grasp of these influence factors is improper in corroding silicon nitride
While also silica is caused to corrode, therefore the defects of just form wafer.
When the silicon concentration increase in the etching groove containing phosphoric acid, the etch rate of silica can reduce.Currently in order to
Corrode so that not formed while corroding silicon nitride to silica, silica flour or silicide etc. are usually added in phosphoric acid solution
Substance corrodes to inhibit to form silica.On the one hand this method causes the rising of manufacture cost；On the other hand corrosion nitridation
The surface that the impurity such as the silicide and oxide that are formed after silicon are adhered to wafer further can cause defect to wafer.
Another reduces the number that the method that silica is corroded is to try to wafer in control etching groove, in this way must not
The efficiency of production is not reduced.
Therefore, it is necessary to it proposes for the method for removing wafer surface defects in a kind of new wet etching, on solving
State problem.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide remove wafer in a kind of wet etching
The method of surface defect, for solving cost increase, nitrogen caused by addition adding silicon matter in phosphoric acid solution in the prior art
The impurity that SiClx is formed after being etched easily causes wafer defect and has to reduce production efficiency to reduce wafer defect
The problem of.
In order to achieve the above objects and other related objects, the present invention provides in a kind of wet etching and removes wafer surface defects
Method, this method includes at least：(1) several control wafers containing silica and silicon nitride film are provided；(2) control wafer is soaked
In the first etching tank containing phosphoric acid solution；(3) it adjusts soaking time and so that the silicon nitride film in the control wafer is complete
Dissolving；The silicon nitride for being dissolved in phosphoric acid forms silicide to inhibit corruption of the phosphoric acid to silica in first etching tank
Erosion；(4) several processing procedure wafers containing silica and silicon nitride film are placed in through the first corrosion processed in step (3)
Silicon nitride film is removed in slot；(5) the second etching tank containing phosphoric acid and sulfuric acid solution is provided；(6) it is rotten to adjust described second
It loses the proportioning of phosphoric acid and sulfuric acid in slot and causes etching selection ratio highest of the silicon nitride to silica；(7) by the institute in step (4)
Processing procedure wafer is stated to be placed in removing the miscellaneous of the processing procedure crystal column surface in the phosphoric acid and sulfuric acid solution of identical proportioning in step (6)
Matter obtains flawless processing procedure wafer.
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(2) temperature of phosphoric acid solution is 150 DEG C~160 DEG C in the first etching tank in.
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(1) number of control wafer is 100~200 in.
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(3) soaking time in is 20 minutes~60 minutes.
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(3) described in phosphoric acid solution silicon a concentration of 30ppm~50ppm.
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(2) a kind of solution of phosphoric acid is contained only in first etching tank in；In second etching tank in the step (6) containing only
By the mixed solution being made of phosphoric acid and sulfuric acid.
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(4) the processing procedure number of wafers in is no more than the control wafer number in the step (1).
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(4) the processing procedure number of wafers in is identical with the control wafer number in the step (1).
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(6) mass concentration of the phosphoric acid in the second etching tank is 20%~40%.
As a kind of preferred embodiment for the method that wafer surface defects are removed in the wet etching of the present invention, the step
(6) silicon nitride is to the highest situation of the etching selection ratio of silica in：Silicon nitride is corroded completely, and silica does not have completely
It is corroded.
As described above, removing the method for wafer surface defects in the wet etching of the present invention, have the advantages that：It adopts
The appropriate phosphoric acid solution containing silicide of processing procedure wafer manufacturing is replaced with control wafer, reduces production cost；The nitrogen that control wafer carries
SiClx film and phosphatase reaction generate the silicide for inhibiting silicon dioxide etching, effectively prevent due to individually in phosphoric acid
The problem of addition silicide causes sound field cost increase；Control wafer is removed using the phosphoric acid and the mixed solution of sulfuric acid that suitably match
In the impurity of crystal column surface adherency after middle silicon nitride etch, processing procedure is removed with the mixed solution of the phosphoric acid of identical proportioning and sulfuric acid
Crystal column surface impurity so that the yield of product is effectively reduced in the case of crystal column surface is flawless.
Description of the drawings
Fig. 1 is shown as removing the flow diagram of the method for wafer surface defects in the wet etching of the present invention.
Fig. 2~Fig. 5 is shown as the process schematic diagram of each step of the present invention.
Component label instructions
S1~S7 steps
20 first etching tanks
201 control wafers
202 phosphoric acid solutions
203 silicides
204 processing procedure wafers
21 second etching tanks
The mixed solution of 205 phosphoric acid and sulfuric acid
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1.It should be noted that the diagram provided in the present embodiment only illustrates the present invention's in a schematic way
Basic conception, component count, shape when only display is with related component in the present invention rather than according to actual implementation in schema then
And size is drawn, kenel, quantity and the ratio of each component can be a kind of random change during actual implementation, and its assembly layout
Kenel may also be increasingly complex.
As shown in Figure 1, Fig. 1 shows be the present invention for removing the stream of the method for wafer surface defects in wet etching
Journey schematic diagram；Step (1)：Several control wafers containing silica and silicon nitride film are provided；It is described in semiconductor production process
The main function of control wafer is the stability and repeatability for monitoring board.Or the experiment for carrying out certain road technique, then test
The performance of control wafer.Therefore, control wafer is not actually used for the wafer of production, i.e., is not processing procedure wafer.Control wafer in the present invention contains
Silicon dioxide layer and silicon nitride film, the silicon nitride film are generally formed in the upper surface of the silica, are typically used as
The barrier layer of etching.The mode that etching is formed in the silicon nitride of the silica upper surface in the present invention is wet etching or wet
Method is corroded.Then implementation steps (2)：The control wafer is dipped in the first etching tank containing phosphoric acid solution；It as shown in Fig. 2, should
By the purpose that the control wafer 201 is placed in the first etching tank 20 containing phosphoric acid solution 202 it is that the silicon nitride is thin in step
Erosion falls；And under normal circumstances, when immersion reaches after a certain period of time, phosphoric acid can all form silicon nitride film and silica
Corrosion, and in corrosion process, the temperature of phosphoric acid solution can also form silicon nitride and silica different etching selection ratios,
That is phosphoric acid is different to the corrosion rate of the two.In order to enable etching selection ratio highest of the silicon nitride to silica, it is preferable that
A kind of solution of phosphoric acid is contained only in first etching tank 20, although other acid solutions can also form silicon nitride and corrode, and be
Ensure that silicon nitride, than stablizing, only has phosphoric acid one to the selection that silica etch in first etching tank in the present embodiment
Kind solution.
Implementation steps (3)：As shown in figure 3, adjusting soaking time so that the silicon nitride film in the control wafer 201 is complete
Dissolving；The silicon nitride film in the control wafer 201 in the phosphoric acid solution 202 is soaked in by phosphoric acid corrosion；It is dissolved in phosphoric acid
Silicon nitride forms silicide 203 to inhibit corrosion of the phosphoric acid to silica in first etching tank 20；Due to phosphoric acid pair
Silicon nitride and silica all have corrosivity, and the purpose of the step is that protection silica avoids being corroded by phosphoric acid, and is needed
Remove the silicon nitride film positioned at silica upper surface, and in phosphoric acid solution, silicon nitride and the silication of phosphatase reaction formation
Object is inhibited to phosphoric acid corrosion silica, therefore, can reach said effect as long as soaking time is adjusted, as this
A kind of preferred embodiment of invention, the soaking time are 20 minutes~60 minutes；Within this time range, silicon nitride has been corroded
It is complete and phosphoric acid will not form corrosion to silica.Equally, the temperature of the phosphoric acid solution in the first etching tank also influences silicon nitride
To the etching selection ratio of silica, it is therefore preferred that the temperature of phosphoric acid solution is in first etching tank of the present invention
150 DEG C~160 DEG C.In the temperature range, in phosphoric acid solution, silicon nitride is to the etching selection ratio highest of silica.
According to prior art it is demonstrated experimentally that since the control wafer number being disposably soaked in phosphoric acid solution decides generation
The number of silicide 203, in the case where above-mentioned temperature and soaking time are certain, the silicide 203 more at most this to dioxy
The inhibiting effect of SiClx corrosion is stronger, therefore, corrodes in order to enable not formed as possible to silica, in the present embodiment preferably
Ground, the number for the control wafer being soaked in the step (1) in first etching tank is 100~200.
In the case where above-mentioned soaking time and corrosion temperature are certain, another preferred embodiment of the invention is the silication
A concentration of 30ppm~50ppm of silicon in object 203.In the concentration range, the silicon nitride is to the etching selection ratio of silica
Highest.
Then implementation steps (4)：Several processing procedure wafers containing silica and silicon nitride film are placed in through step (3)
In silicon nitride film is removed in processed first etching tank；As shown in figure 4, the processing procedure wafer 204 refers to really using
The wafer produced in batches in production.The direct shadow of quality of the processing procedure wafer 204 etching effect in the etching technics
Ring the performance of the processing procedure wafer and the yield of product.After the usual processing procedure wafer 204 is by certain technical process in production,
The silicon nitride film as barrier layer can be formed on silica, and is passed through in the phosphoric acid solution handled in step (3) and contained
The silicide that silicon nitride and phosphatase reaction generate, the step (4) is by the processing procedure containing silica and silicon nitride film
The purpose that wafer is placed in the phosphoric acid solution containing silicide prepared before is the corrosiveness to silicon nitride using phosphoric acid,
And the inhibiting effect being further corroded using the silicide in the phosphoric acid to silica, only in the processing procedure wafer
Barrier layer silicon nitride form corrosion, silica is not formed and corroded, should if the silica in processing procedure wafer is corroded
Processing procedure wafer influences the yield of final products then it is possible that defect can be generated.
What the silica in the step in inhibition corrosion processing procedure wafer utilized is that silicon nitride is produced with phosphatase reaction in control wafer
Raw silicide avoids and additionally incorporates silicide in phosphoric acid solution and lead to cost increase.In the step, when processing procedure wafer
On silicon nitride be corroded after, it is no longer necessary to soaking time is adjusted, because containing silicide in first etching tank,
Through foring inhibition to the corrosion of silica, therefore how long soaking time will not all cause silica to be corroded.
It is usually selected in order to cause the silicide best to the inhibiting effect of silicon dioxide etching in the step
The number of processing procedure wafer should be not more than the number of control wafer in the step (1), therefore, in order to which the production efficiency for reaching higher is same
When do not influence silica in the processing procedure wafer again and be corroded, it is preferable that the number of processing procedure wafer described in the step and institute
The number for stating control wafer in step (1) is identical.
Implementation steps (5)：The second etching tank containing phosphoric acid and sulfuric acid solution is provided；As shown in figure 5, second corrosion
Mixed solution 205 containing phosphoric acid and sulfuric acid in slot 21.
Then implementation steps (6)：Adjusting the proportioning of phosphoric acid and sulfuric acid in second etching tank 21 causes silicon nitride to two
The etching selection ratio highest of silica；In the step using the mixed solution of phosphoric acid and sulfuric acid to the silicon nitride in processing procedure wafer and
Silica all has corrosivity, therefore, in order to enable the corrosivity of silica is minimum, needs to adjust second etching tank
The proportioning of sulfuric acid and phosphoric acid in the mixed solution 205 of phosphoric acid and sulfuric acid in 21.As a preferred embodiment of the present invention, the step
In second etching tank 21 in contain only the mixed solution being made of phosphoric acid and sulfuric acid.It is further preferred that described in adjusting
The proportioning of phosphoric acid and sulfuric acid so that the mass concentration of phosphoric acid is 20%~40% in second etching tank 21, silicon nitride pair under the concentration
The etching selection ratio highest of silica.
In the case of silicon nitride is highest to the etching selection ratio of silica, the silica in the processing procedure wafer
May also be corroded a part, and the rate for only corroding the speed ratio corroding silicon nitride of silica is slow；The reality of the present invention
Apply in example, it is preferable that when in step (6) silicon nitride to the etching selection ratio of silica is highest when, silicon nitride is by complete rotten
Erosion, and silica is not corroded completely.The step (6) can continue to contain phosphorus described with the control wafer in step (1)
It is tested in the solution of acid and sulfuric acid so that silicon nitride is to the etching selection ratio highest of silica.
Then implementation steps (7)：The processing procedure wafer in step (4) is placed in the phosphorus with identical proportioning in step (6)
To remove the impurity of the processing procedure crystal column surface in acid and sulfuric acid solution, flawless processing procedure wafer is obtained.In the present embodiment, warp
It has been removed after step (4) processing with the silicon nitride film on the equal number of processing procedure wafer of the control wafer by the silicide；
And during the silicon nitride is removed, the processing procedure wafer is placed in the phosphoric acid solution containing a large amount of silicides, and institute
It states silicide and belongs to deposit in phosphoric acid solution, after the processing procedure wafer takes out first etching tank, the processing procedure
The surface of wafer can adhere to many impurity (including silicide), if these impurity of processing procedure crystal column surface, in subsequent production
In the defects of further resulting in crystal column surface, therefore, by step (4), treated that processing procedure wafer needs to place in the present invention
Enter the impurity with removing the processing procedure crystal column surface in the phosphoric acid and sulfuric acid solution of identical proportioning in the step (6), obtain
Flawless processing procedure wafer.
So far whole implementation steps of the invention have been completed.The side of wafer surface defects is removed in the wet etching of the present invention
Method has following three advantageous effects：(1) phosphoric acid containing silicide for replacing processing procedure wafer manufacturing appropriate using control wafer is molten
Liquid reduces production cost；(2) silicon nitride film that control wafer carries generates to inhibit silicon dioxide etching with phosphatase reaction
Silicide, effectively prevent due to individually in phosphoric acid add silicide cause sound field cost increase the problem of；(3) it uses
The phosphoric acid and the mixed solution of sulfuric acid that suitably match removes the impurity adhered to after silicon nitride etch in crystal column surface in control wafer, with
The phosphoric acid of identical proportioning and the mixed solution of sulfuric acid remove processing procedure crystal column surface impurity so that the flawless situation of crystal column surface
Under effectively reduce the yield of product.
In conclusion removing the method for wafer surface defects in the wet etching of the present invention, solve and exist in the prior art
The impurity that cost increase, silicon nitride caused by addition adding silicon matter in phosphoric acid solution are formed after being etched easily causes to lack to wafer
It falls into and to reduce the problem of wafer defect has to reduce production efficiency.So the present invention effectively overcomes the prior art
In various shortcoming and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. the method for wafer surface defects is removed in a kind of wet etching, which is characterized in that this method includes at least：
(1) several control wafers containing silica and silicon nitride film are provided；
(2) control wafer is dipped in the first etching tank containing phosphoric acid solution；
(3) adjusting soaking time causes the silicon nitride film in the control wafer to be completely dissolved；The silicon nitride for being dissolved in phosphoric acid exists
Silicide is formed in first etching tank to inhibit corrosion of the phosphoric acid to silica；
(4) several processing procedure wafers containing silica and silicon nitride film are placed in rotten through in step (3) processed first
Silicon nitride film is removed in erosion slot；
(5) the second etching tank containing phosphoric acid and sulfuric acid solution is provided；
(6) adjust the proportioning of phosphoric acid and sulfuric acid in second etching tank so that silicon nitride to the etching selection ratio of silica most
It is high；
(7) the processing procedure wafer in step (4) is placed in being gone in the phosphoric acid and sulfuric acid solution of identical proportioning in step (6)
Except the impurity of the processing procedure crystal column surface, flawless processing procedure wafer is obtained.
2. the method for wafer surface defects is removed in wet etching according to claim 1, it is characterised in that：The step
(2) temperature of phosphoric acid solution is 150 DEG C~160 DEG C in the first etching tank in.
3. the method for wafer surface defects is removed in wet etching according to claim 1, it is characterised in that：The step
(1) number of control wafer is 100~200 in.
4. the method for wafer surface defects is removed in wet etching according to claim 3, it is characterised in that：The step
(3) soaking time in is 20 minutes~60 minutes.
5. the method for wafer surface defects is removed in wet etching according to claim 1, it is characterised in that：The step
(3) described in phosphoric acid solution silicon a concentration of 30ppm~50ppm.
6. the method for wafer surface defects is removed in wet etching according to claim 1, it is characterised in that：The step
(2) a kind of solution of phosphoric acid is contained only in first etching tank in；In second etching tank in the step (6) containing only
By the mixed solution being made of phosphoric acid and sulfuric acid.
7. the method for wafer surface defects is removed in wet etching according to claim 1, it is characterised in that：The step
(4) the processing procedure number of wafers in is no more than the control wafer number in the step (1).
8. the method for wafer surface defects is removed in wet etching according to claim 1, it is characterised in that：The step
(4) the processing procedure number of wafers in is identical with the control wafer number in the step (1).
9. the method for wafer surface defects is removed in wet etching according to claim 1, it is characterised in that：The step
(6) mass concentration of the phosphoric acid in the second etching tank is 20%~40%.
10. the method for wafer surface defects is removed in wet etching according to claim 1, it is characterised in that：The step
Suddenly silicon nitride is to the highest situation of the etching selection ratio of silica in (6)：Silicon nitride is corroded completely, and silica is complete
It is not corroded.
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| CN107706192B (en) * | 2017-08-22 | 2019-02-22 | 长江存储科技有限责任公司 | A kind of preparation method and its structure of three-dimensional storage |
| CN110047749B (en) * | 2019-03-21 | 2020-12-18 | 中国电子科技集团公司第五十五研究所 | Method for removing silicon nitride in radio frequency LDMOS planarization process |
| CN111081787B (en) * | 2019-11-20 | 2022-10-28 | 广微集成技术（深圳）有限公司 | Wafer preparation method |
| CN113943579A (en) * | 2021-10-15 | 2022-01-18 | 中国科学院上海微系统与信息技术研究所 | Combined etching liquid, etching system and etching method |
| CN115881529B (en) * | 2023-02-06 | 2023-05-12 | 合肥新晶集成电路有限公司 | Wet etching method, device, system, computer equipment and medium |
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| TW200814181A (en) * | 2006-09-12 | 2008-03-16 | Toshiba Kk | Etching liquid, etching method, and method of manufacturing electronic component |
| CN102956492A (en) * | 2011-08-24 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and manufacture method thereof and MOS (metal oxide semiconductor) transistor and manufacture method thereof |
| CN103208421A (en) * | 2013-03-14 | 2013-07-17 | 上海华力微电子有限公司 | Method for improving etching selection ratio of silicon nitride layer to oxide layer |
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| JP2007517413A (en) * | 2003-12-30 | 2007-06-28 | アクリオン・エルエルシー | Apparatus and method for selective etching of silicon nitride during substrate processing |
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|---|---|---|---|---|
| TW200814181A (en) * | 2006-09-12 | 2008-03-16 | Toshiba Kk | Etching liquid, etching method, and method of manufacturing electronic component |
| CN102956492A (en) * | 2011-08-24 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and manufacture method thereof and MOS (metal oxide semiconductor) transistor and manufacture method thereof |
| CN103208421A (en) * | 2013-03-14 | 2013-07-17 | 上海华力微电子有限公司 | Method for improving etching selection ratio of silicon nitride layer to oxide layer |
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