CN102738687A - 太赫兹波产生装置、相机、成像装置以及测量装置 - Google Patents

太赫兹波产生装置、相机、成像装置以及测量装置 Download PDF

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Publication number
CN102738687A
CN102738687A CN2012101052095A CN201210105209A CN102738687A CN 102738687 A CN102738687 A CN 102738687A CN 2012101052095 A CN2012101052095 A CN 2012101052095A CN 201210105209 A CN201210105209 A CN 201210105209A CN 102738687 A CN102738687 A CN 102738687A
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CN
China
Prior art keywords
electrodes
pair
thz wave
pulsed light
light
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Pending
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CN2012101052095A
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English (en)
Chinese (zh)
Inventor
富冈纮斗
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Seiko Epson Corp
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Seiko Epson Corp
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Publication date
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Publication of CN102738687A publication Critical patent/CN102738687A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0057—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for temporal shaping, e.g. pulse compression, frequency chirping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Studio Devices (AREA)
  • Semiconductor Lasers (AREA)
CN2012101052095A 2011-04-13 2012-04-11 太赫兹波产生装置、相机、成像装置以及测量装置 Pending CN102738687A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011089539A JP2012222303A (ja) 2011-04-13 2011-04-13 テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
JP2011-089539 2011-04-13

Publications (1)

Publication Number Publication Date
CN102738687A true CN102738687A (zh) 2012-10-17

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CN2012101052095A Pending CN102738687A (zh) 2011-04-13 2012-04-11 太赫兹波产生装置、相机、成像装置以及测量装置

Country Status (3)

Country Link
US (1) US8633442B2 (https=)
JP (1) JP2012222303A (https=)
CN (1) CN102738687A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2662892T3 (es) 2008-12-19 2018-04-10 Radio Physics Solutions Ltd Método para la formación de imágenes radiométricas y antena para la implementación del método
GB201015207D0 (en) * 2010-09-13 2010-10-27 Radio Physics Solutions Ltd Improvements in or relating to millimeter and sub-millimeter mave radar-radiometric imaging
GB2496835B (en) * 2011-09-23 2015-12-30 Radio Physics Solutions Ltd Package for high frequency circuits
KR101897257B1 (ko) * 2012-05-14 2018-09-11 한국전자통신연구원 광 검출기 및 그를 구비한 광학 소자
JP6706790B2 (ja) * 2016-03-11 2020-06-10 大学共同利用機関法人自然科学研究機構 テラヘルツ波イメージング装置
JP6843600B2 (ja) 2016-11-28 2021-03-17 キヤノン株式会社 画像取得装置、これを用いた画像取得方法及び照射装置
DE102019135487A1 (de) * 2019-12-20 2021-06-24 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Vorrichtung zum Senden und/oder Empfangen von Terahertz-Strahlung und Verwendung hiervon
US12360503B2 (en) * 2020-08-25 2025-07-15 Building Robotics, Inc. Light fixture of building automation system
JP7167211B2 (ja) * 2021-02-24 2022-11-08 キヤノン株式会社 画像取得装置、これを用いた画像取得方法及び照射装置
JP7805742B2 (ja) * 2021-10-08 2026-01-26 キヤノン株式会社 検査システム及びコンピュータプログラム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317669A (ja) * 2004-04-27 2005-11-10 Research Foundation For Opto-Science & Technology テラヘルツ波発生装置及びそれを用いた計測装置
JP2009105102A (ja) * 2007-10-19 2009-05-14 Panasonic Corp テラヘルツ波エミッタ装置
US20110080329A1 (en) * 2006-03-29 2011-04-07 Rwth Aachen University Thz Antenna Array, System and Method for Producing a THz Antenna Array

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721537B2 (ja) * 1989-02-22 1998-03-04 日立電線株式会社 ガラス導波路
FR2657731A1 (fr) * 1990-02-01 1991-08-02 Corning Incorp Amplificateur optique integre.
JP3919344B2 (ja) 1998-07-27 2007-05-23 浜松ホトニクス株式会社 テラヘルツ波発生装置
JP3328881B2 (ja) * 1999-05-26 2002-09-30 独立行政法人産業技術総合研究所 半導体光パルス圧縮導波路素子及び半導体光パルス発生レーザ
JP3926139B2 (ja) * 2001-11-09 2007-06-06 Ｎｅｃエンジニアリング株式会社 光増幅素子
JP2008277565A (ja) 2007-04-27 2008-11-13 Matsushita Electric Ind Co Ltd テラヘルツ波発生装置
JP5209364B2 (ja) * 2008-04-25 2013-06-12 独立行政法人理化学研究所 テラヘルツ波ビーム走査装置と方法
JP4534027B1 (ja) * 2010-03-01 2010-09-01 国立大学法人 岡山大学 電磁波波面整形素子及びそれを備えた電磁波イメージング装置、並びに電磁波イメージング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317669A (ja) * 2004-04-27 2005-11-10 Research Foundation For Opto-Science & Technology テラヘルツ波発生装置及びそれを用いた計測装置
US20110080329A1 (en) * 2006-03-29 2011-04-07 Rwth Aachen University Thz Antenna Array, System and Method for Producing a THz Antenna Array
JP2009105102A (ja) * 2007-10-19 2009-05-14 Panasonic Corp テラヘルツ波エミッタ装置

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US8633442B2 (en) 2014-01-21
JP2012222303A (ja) 2012-11-12

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Application publication date: 20121017