CN102738167A - 半导体器件及其形成方法 - Google Patents
半导体器件及其形成方法 Download PDFInfo
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- CN102738167A CN102738167A CN2011100807394A CN201110080739A CN102738167A CN 102738167 A CN102738167 A CN 102738167A CN 2011100807394 A CN2011100807394 A CN 2011100807394A CN 201110080739 A CN201110080739 A CN 201110080739A CN 102738167 A CN102738167 A CN 102738167A
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- conductive layer
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- effect transistor
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- mos field
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000005669 field effect Effects 0.000 claims abstract description 98
- 239000000463 material Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 238000002955 isolation Methods 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 7
- 229910000765 intermetallic Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 247
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- -1 GaAs etc.) Chemical class 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 208000005189 Embolism Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110080739.4A CN102738167B (zh) | 2011-03-31 | 2011-03-31 | 半导体器件及其形成方法 |
Applications Claiming Priority (1)
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CN201110080739.4A CN102738167B (zh) | 2011-03-31 | 2011-03-31 | 半导体器件及其形成方法 |
Publications (2)
Publication Number | Publication Date |
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CN102738167A true CN102738167A (zh) | 2012-10-17 |
CN102738167B CN102738167B (zh) | 2017-02-22 |
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CN201110080739.4A Active CN102738167B (zh) | 2011-03-31 | 2011-03-31 | 半导体器件及其形成方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105278235A (zh) * | 2014-07-22 | 2016-01-27 | 佳能株式会社 | 图案生成方法以及信息处理装置 |
CN106653753A (zh) * | 2015-10-30 | 2017-05-10 | 台湾积体电路制造股份有限公司 | 半导体结构 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332582A (ja) * | 2002-05-13 | 2003-11-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4282388B2 (ja) * | 2003-06-30 | 2009-06-17 | 株式会社東芝 | 半導体記憶装置 |
JP5006580B2 (ja) * | 2006-05-31 | 2012-08-22 | ルネサスエレクトロニクス株式会社 | 保護回路を備える半導体装置 |
-
2011
- 2011-03-31 CN CN201110080739.4A patent/CN102738167B/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105278235A (zh) * | 2014-07-22 | 2016-01-27 | 佳能株式会社 | 图案生成方法以及信息处理装置 |
CN106653753A (zh) * | 2015-10-30 | 2017-05-10 | 台湾积体电路制造股份有限公司 | 半导体结构 |
CN106653753B (zh) * | 2015-10-30 | 2019-07-19 | 台湾积体电路制造股份有限公司 | 半导体结构 |
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CN102738167B (zh) | 2017-02-22 |
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Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NMC Co.,Ltd. Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190222 Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Wenchang Road 8 Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |