CN102736172A - Surface plasmon polariton waveguide - Google Patents
Surface plasmon polariton waveguide Download PDFInfo
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- CN102736172A CN102736172A CN2012101954516A CN201210195451A CN102736172A CN 102736172 A CN102736172 A CN 102736172A CN 2012101954516 A CN2012101954516 A CN 2012101954516A CN 201210195451 A CN201210195451 A CN 201210195451A CN 102736172 A CN102736172 A CN 102736172A
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Abstract
The invention belongs to a waveguide technology and in particular relates to a surface plasmon polariton waveguide. The surface plasmon polariton waveguide comprises a substrate layer, two high-refractive-index dielectric layers, two low-refractive-index dielectric layers and a metal layer, wherein the two high-refractive-index dielectric layers, the two low-refractive-index dielectric layers and the metal layer are arranged above the substrate layer to form a lamination structure which consists of a first high-refractive-index dielectric, a first low-refractive-index dielectric, metal, a second low-refractive-index dielectric and a second high-refractive-index dielectric; and the lamination structure is horizontally placed or vertically laminated on the substrate layer. The surface plasmon polariton waveguide has the advantages that a surface plasmon polariton mode and the conventional slot waveguide mode are mixed; on the basis of the conventional slot waveguide, a central metal layer is added, and by using a metal-dielectrics surface plasmon polariton effect, mode locality is improved; and moreover, by using a thin metal layer long-range surface plasmon polariton effect, the absorption loss of the metal is reduced, so large propagation length of over 1 mm can be obtained.
Description
Technical field
The invention belongs to guide technology, be specifically related to a kind of surface plasmon wave and lead.
Background technology
It is one of ideal candidates of following high integrated optical circuit that surface plasmon wave is led (SPP WG); It can be limited in the mould field in the narrow and small zone of metal-dielectric surface; Break through the diffraction of light limit; Thereby can reduce the mode field area of light field in the waveguide greatly, for the size that further reduces following light path element provides possibility.Simultaneously, owing to have minimum mode field area, it can provide high energy density; Can in numerous nonlinear application that need high-energy-density, bring into play great potential; Like all-optical switch, All Optical Wavelength Conversion etc., thereby receive increasing concern in recent years.
The structure that surface plasmon wave is led is of a great variety; Like the bonding jumper on sheet metal, metal nano-rod, the base of dielectric, metal narrow slit wave-guide or the like; The surface plasmon wave of these structures is led not to be had to solve the equilibrium problem between restriction of mould field and the metal absorption loss well; Cause in practical application, always can receiving the mould field and limit not enough or the excessive restriction of absorption loss, be difficult to it is applied in the comparatively ripe nonlinear optics application of present theoretical research.The waveguide of nearest a kind of blending surface plasmon has brought new hope for this two balance, and it can reduce loss under the prerequisite with the restriction of fine mould field, can break through above-mentioned restriction in a sense.But, its loss still increases with the restriction of mould field.Simultaneously, the blending surface plasmon waveguide that has proposed only can obtain the spread length of 100 μ m to the 1mm magnitude, is difficult to continue to reduce loss and then improve spread length, to satisfy the related functionality requirement that high integrated optical circuit and full light signal are handled.So, when the mould field is limited in the miniature scale scope of tens nm even several nm, need design again to keep lower loss characteristic this blending surface plasmon waveguide.
Summary of the invention
The purpose of this invention is to provide a kind of surface plasmon wave and lead, make it to have very low loss, and can be applicable to full light signal processing with new structure.
A kind of surface plasmon wave provided by the invention is led; It is characterized in that; The low-refraction dielectric seam zone of tradition seam waveguide changes to sandwich construction; The both sides of this sandwich construction still are the low-refraction dielectric layer, and the center is a metal material layer, make the mould field energy be limited in two low-refraction dielectric layer zones of metal both sides in the interlayer; Said sandwich construction both sides are provided with the high index of refraction dielectric layer; Two high index of refraction dielectric layers, two low-refraction dielectric layers and metal level constitute the rhythmo structure of " high index of refraction dielectric-low-refraction dielectric-metal-low-refraction dielectric-high index of refraction dielectric ", the horizontal traverse of said rhythmo structure or vertically be stacked on the basalis.
As the improvement of technique scheme, the length of said metal material layer on stacked direction is 5nm to 50nm.
As the further improvement of technique scheme, the length on stacked direction of said low-refraction dielectric layer is 5nm to 50nm.
As the further improvement of technique scheme, said metal material layer is the common metal material that comprises gold, silver or aluminium.
Surface plasmon wave provided by the invention is led and has been utilized the mixing of surface plasmon mode formula with tradition seam waveguide mode.On tradition seam waveguide basis, add the central metal layer, utilize metal-dielectric surface plasmon effect, further the enhancement mode locality.In addition, utilize thin metal layer long-distance surface plasmon effect reducing the absorption loss of metal, thereby obtain very long spread length (can arrive more than the 1mm).
Particularly, the present invention has following beneficial effect:
1, the present invention adopts the seam waveguide that the surface plasma bulk effect strengthens, and has further reduced the mould field size of seam waveguide, has improved energy density, makes it to be suitable for the needs of full optical nonlinear signal Processing.
2, the present invention can with complementary metal oxide semiconductor (CMOS) (CMOS) process compatible, can on existing silica-based making platform, make.
3, the waveguide region material of the present invention's employing can be selected flexibly, such as selecting to have very high nonlinear refraction rate coefficient n
2Material be suitable for the application of Kerr effect, or select very high two-photon absorption factor beta
TPAMaterial be suitable for application of two-photon absorption effect or the like, this can further improve the efficient of nonlinear application.
Description of drawings
Fig. 1 is the structural drawing of blending surface plasmon provided by the invention waveguide (the rhythmo structure level is disposed across on the basalis);
Fig. 2 is the structural drawing of blending surface plasmon provided by the invention waveguide (rhythmo structure vertically is stacked on the basalis)
Fig. 3 be the blending surface plasmon waveguide that provides of instance of the present invention when wavelength 1550nm normalized mode field energy flux density along the distribution (the rhythmo structure level is disposed across on the basalis) of x direction (y=0).
Embodiment
The invention provides the waveguide of a kind of blending surface plasmon seam, be embodied on the basis of seam commonly used waveguide and add metal material, lead thereby obtain the new hybrid surface plasmon wave that the restriction of mould field strengthens in the seam zone.Waveguide mode in the seam can be regarded mixing of tradition seam waveguide mode and metal-dielectric surface plasmon waveguide mode as.The low-refraction dielectric seam zone of tradition being stitched waveguide changes to sandwich construction: be the distribution of " low-refraction dielectric-metal-low-refraction dielectric ".The mould field energy is by in fine two low-refraction dielectric layers that are limited in metal both sides in the interlayer.This mixed mode that obtains has the dual characteristics that the loss of seam waveguide mode is little and metal-restriction of dielectric surface plasmon pattern mould field is good, thereby makes waveguide region possess the very high energy density and the possibility of practical application.
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
This instance is a kind of blending surface plasmon waveguide that full light signal is handled that is used for, and it comprises basalis 1, first dielectric layer 2, second dielectric layer 3, the 3rd dielectric layer 4, the 4th dielectric layer 5 and metal level 6.First dielectric layer 2, second dielectric layer 3, the 3rd dielectric layer 4, the 4th dielectric layer 5 and metal level 6 are arranged on basalis 1.These five layers of formations are according to the rhythmo structure of following order: first dielectric layer 2, the 3rd dielectric layer 4, metal level 6, the 4th dielectric layer 5 and second dielectric layer 3; Thereby form the rhythmo structure of " high index of refraction dielectric-low-refraction dielectric-metal-low-refraction dielectric-high index of refraction dielectric "; Wherein, the 3rd dielectric layer 4, metal level 6, the 4th dielectric layer 5 constitute described sandwich construction.And this rhythmo structure is by horizontal traverse or vertically be stacked and placed on (shown in Figure 1 is horizontal traverse structure, and shown in Figure 2 is vertical stacked structure) on the basalis 1.First dielectric layer 2 is that identical refraction materials and physical dimension are consistent with second dielectric layer 3; The 3rd dielectric layer 4 is that identical refraction materials and physical dimension are consistent with the 4th dielectric layer 5 simultaneously, and the material refractive index of first dielectric layer 2 and second dielectric layer 3 is greater than the material refractive index of the 3rd dielectric layer 4 and the 4th dielectric layer 5.And the material refractive index of basalis 1 is less than the material refractive index of first dielectric layer 2 and second dielectric layer 3.
As for the physical dimension of each layer, the present invention is the same with existing seam waveguide, and not other special requirement illustrate its preferred a kind of range of size below, but the present invention is not limited thereto.For horizontal traverse situation shown in Figure 1, these four kinds of dielectric layers and metal level all have identical height, and span is at 50nm to 500nm; And following for each layer width span: the width of first dielectric layer 2 and second dielectric layer 3 is 50nm to 500nm, and the width of the 3rd dielectric layer 4 and the 4th dielectric layer 5 is 5nm to 50nm, and the width of metal level 6 is 5nm to 50nm.And, be appreciated that the size on x and y direction is done corresponding exchange and got final product for vertical stacked situation to corresponding with horizontal cross placement direction situation.For basalis 1, its height and the width are not made particular determination for waveguide size of foundation base commonly used such as silica-primed size.Set waveguiding structure with this geometric parameter, can obtain having the restriction of good mould field, the waveguide of low-loss blending surface plasmon.
The present invention does not have special qualification to the material of basalis 1, first dielectric layer 2, second dielectric layer 3, the 3rd dielectric layer 4, the 4th dielectric layer 5 and metal level 6, only requires that the material of basalis 1, first dielectric layer 2, second dielectric layer 3, the 3rd dielectric layer 4, the 4th dielectric layer 5 is a dielectric.Fasten the refractive index that satisfies basalis 1, the 3rd dielectric layer 4 and the 4th dielectric layer 5 dielectric refractive index and close less than first dielectric layer 2 and second dielectric layer 3 at dielectric refractive index.Metal level 6 adopts metal material commonly used, like gold, silver or aluminium etc.
Be silicon dioxide layer with basalis 1 below, first dielectric layer 2, second dielectric layer 3 are silicon layer, and the 3rd dielectric layer 4, the 4th dielectric layer 5 are the silicon nanocrystal layer, and metal level 6 is described further the present invention for the horizontal cross placement situation of silver is an example.
Surface plasmon wave lead be a kind of can be with the waveguiding structure of energy limited at metal-dielectric surface; The mould field energy is a peak value at metal-dielectric surface in contact; On perpendicular to the direction of surface of contact, in metal and dielectric, be exponential decay then, thereby the mould field tightly is being limited in the surface of contact zone, in these two kinds of exponential mould field decay; Intrametallic decay is rapider, and this also is to cause the very big immediate cause of conventional surface plasmon waveguide loss.And in this structure, the metal level both sides are symmetrical dielectric medium structure, and the metal of metal level both sides-dielectric surface plasmon pattern is a TM mode.Especially; Owing to adopted thin metal layer in this structure, this TM mode that makes the thin metal layer both sides be symmetry can smoothly transfer the transverse electromagnetic mode of vertical surface polarization to, this moment occurs long-distance surface plasmon effect; The decay of mould field effectively reduces, and spread length increases.Can simulate the mould field distribution of this waveguiding structure based on Finite Element Method.Under the prerequisite that guarantees good loss characteristic,, adopted this high n of silicon nanocrystal in order to obtain higher nonlinear factor γ
2The value material the time, target is to obtain littler effective model area A
EffThe area that reduces the slit areas waveguide is a main measure, but when area was too small, it is very big that the loss meeting becomes, and the shared energy proportion in slit areas mould field diminishes simultaneously, and this does not hope to see, so need obtain the optimal value of an intermediate sizes.Empirical tests; Discovery is when following two kinds of sizes (seeing table 1 and table 2); Can obtain two kinds of blending surface plasmon waveguide modes with good behaviour; The double aperture slit zone that pattern is separated by metal in the middle of being limited in well, the energy proportion in its concrete spread length, pattern useful area and low-refraction dielectric seam zone is respectively referring to table 1 and table 2.
Table 1
| h2 | 200nm | w2 | 140nm |
| h3 | 200nm | w3 | 140nm |
| h4 | 200nm | w4 | 5nm |
| h5 | 200nm | w5 | 5nm |
| h6 | 200nm | w6 | 10nm |
| Lprop | 1.6mm | Aeff | 0.02μm2 |
| Pslot | 7.67% |
Table 2
| h2 | 200nm | w2 | 110nm |
| h3 | 200nm | w3 | 110nm |
| h4 | 200nm | w4 | 35nm |
| h5 | 200nm | w5 | 35nm |
| h6 | 200nm | w6 | 10nm |
| Lprop | 8.1mm | Aeff | 0.1μm2 |
| Pslot | 11.24% |
In table 1 and table 2, h2, h3; H4, h5, h6 are respectively the height (vertical stacked direction) of first dielectric layer 2, second dielectric layer 3, the 3rd dielectric layer 4, the 4th dielectric layer 5, metal level 6; W2, w3, w4; W5, w6 are respectively the width (parallel stacked direction) of first dielectric layer 2, second dielectric layer 3, the 3rd dielectric layer 4, the 4th dielectric layer 5, metal level 6.Lprop is a spread length, and Aeff is the pattern useful area, and Pslot is the ratio that mould field power that low-refraction dielectric slit areas is limited accounts for the mould field power in whole space.
The present invention not only is confined to above-mentioned embodiment; Persons skilled in the art are according to content disclosed by the invention; Can adopt other multiple embodiment embodiment of the present invention, therefore, every employing project organization of the present invention and thinking; Make some simple designs that change or change (as revising size etc.), all fall into the scope of the present invention's protection.
Claims (4)
1. a surface plasmon wave is led; It is characterized in that; The low-refraction dielectric seam zone of tradition seam waveguide changes to sandwich construction; The both sides of this sandwich construction still are the low-refraction dielectric layer, and the center is a metal material layer, make the mould field energy be limited in two low-refraction dielectric layer zones of metal both sides in the interlayer; Said sandwich construction both sides are provided with the high index of refraction dielectric layer; Two high index of refraction dielectric layers, two low-refraction dielectric layers and metal level constitute the rhythmo structure of " high index of refraction dielectric-low-refraction dielectric-metal-low-refraction dielectric-high index of refraction dielectric ", the horizontal traverse of said rhythmo structure or vertically be stacked on the basalis.
2. surface plasmon wave according to claim 1 is led, and it is characterized in that, the length of said metal material layer on stacked direction is 5 nm to 50 nm.
3. surface plasmon wave according to claim 1 is led, and it is characterized in that, the length of said low-refraction dielectric layer on stacked direction is 5 nm to 50 nm.
4. surface plasmon wave according to claim 1 is led, and it is characterized in that, said metal material layer is the common metal material that comprises gold, silver or aluminium.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246016A (en) * | 2013-05-03 | 2013-08-14 | 中国科学院物理研究所 | Method for reducing loss generated by leakage in process of transmitting surface plasmons |
| CN104964762A (en) * | 2015-07-09 | 2015-10-07 | 广西师范大学 | Grating structure lithium niobate-gold-lithium niobate surface plasmon temperature sensing device |
| CN106569300A (en) * | 2016-10-31 | 2017-04-19 | 东南大学 | Surface plasma optical waveguide structure based on zinc oxide nanotube |
| CN108957628A (en) * | 2018-09-20 | 2018-12-07 | 广西师范大学 | A kind of mixing plasma waveguide of the long-range coated by dielectric based on molybdenum disulfide |
| CN109117575A (en) * | 2018-08-29 | 2019-01-01 | 北京邮电大学 | The structural parameter determining method and equipment of surface plasmon waveguide system |
| CN112213820A (en) * | 2020-09-14 | 2021-01-12 | 桂林电子科技大学 | MIMI type micro-nano all-optical switch based on surface plasmon resonance |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7583882B2 (en) * | 2006-11-10 | 2009-09-01 | University Of Alabama In Huntsville | Waveguides for ultra-long range surface plasmon-polariton propagation |
| CN101630039A (en) * | 2009-03-19 | 2010-01-20 | 国家纳米科学中心 | Low loss mixed type surface plasmon optical waveguide |
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2012
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7583882B2 (en) * | 2006-11-10 | 2009-09-01 | University Of Alabama In Huntsville | Waveguides for ultra-long range surface plasmon-polariton propagation |
| CN101630039A (en) * | 2009-03-19 | 2010-01-20 | 国家纳米科学中心 | Low loss mixed type surface plasmon optical waveguide |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246016A (en) * | 2013-05-03 | 2013-08-14 | 中国科学院物理研究所 | Method for reducing loss generated by leakage in process of transmitting surface plasmons |
| CN104964762A (en) * | 2015-07-09 | 2015-10-07 | 广西师范大学 | Grating structure lithium niobate-gold-lithium niobate surface plasmon temperature sensing device |
| CN104964762B (en) * | 2015-07-09 | 2019-04-23 | 广西师范大学 | A kind of lithium niobate-gold of optical grating construction-lithium niobate surface plasmons temperature sensing device |
| CN106569300A (en) * | 2016-10-31 | 2017-04-19 | 东南大学 | Surface plasma optical waveguide structure based on zinc oxide nanotube |
| CN106569300B (en) * | 2016-10-31 | 2019-08-13 | 东南大学 | A kind of surface plasma optical waveguide structure based on zinc oxide nano mitron |
| CN109117575A (en) * | 2018-08-29 | 2019-01-01 | 北京邮电大学 | The structural parameter determining method and equipment of surface plasmon waveguide system |
| CN109117575B (en) * | 2018-08-29 | 2020-10-02 | 北京邮电大学 | Method and equipment for determining structural parameters of surface plasmon waveguide system |
| CN108957628A (en) * | 2018-09-20 | 2018-12-07 | 广西师范大学 | A kind of mixing plasma waveguide of the long-range coated by dielectric based on molybdenum disulfide |
| CN112213820A (en) * | 2020-09-14 | 2021-01-12 | 桂林电子科技大学 | MIMI type micro-nano all-optical switch based on surface plasmon resonance |
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Effective date of registration: 20210416 Address after: 226000 Qixin Road, Nantong Development Zone, Jiangsu Province Patentee after: Zhongtian Communication Technology Co.,Ltd. Patentee after: ZHONGTIAN BROADBAND TECHNOLOGY Co.,Ltd. Address before: 430074 Hubei Province, Wuhan city Hongshan District Luoyu Road No. 1037 Patentee before: HUAZHONG University OF SCIENCE AND TECHNOLOGY |
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