CN102608701B - Medium slit optical waveguide - Google Patents

Medium slit optical waveguide Download PDF

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Publication number
CN102608701B
CN102608701B CN 201210056637 CN201210056637A CN102608701B CN 102608701 B CN102608701 B CN 102608701B CN 201210056637 CN201210056637 CN 201210056637 CN 201210056637 A CN201210056637 A CN 201210056637A CN 102608701 B CN102608701 B CN 102608701B
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refractive index
low refractive
medium
index medium
district
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CN102608701A (en
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郑铮
卞宇生
赵欣
苏亚林
刘磊
刘建胜
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Beihang University
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Beihang University
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Abstract

The invention discloses a medium slit optical waveguide. The cross section of the waveguide structure comprises a substrate layer (1), a high-refractive index buffer layer (2), a high-refractive index medium layer (3), a low-refractive index medium layer (4), a high-refractive index medium area (5), a low-refractive index medium area (6), a high-refractive index medium area (7) and a wrapping layer (8), wherein the high-refractive index buffer layer (2), the high-refractive index medium layer (3) and the low-refractive index medium layer (4) are sequentially arranged from bottom to top on thesubstrate layer; and the high-refractive index medium area (5), the low-refractive index medium area (6) and the high-refractive index medium area (7) are sequentially arranged from left to right on the low-refractive index medium layer. The waveguide can realize relatively strong mode field restriction on two polarized lights at the same time, and can realize multiple characteristics such as positive and negative birefringence, zero birefringence and the like through regulation and control on the structure size. The medium slit waveguide is matched with the existing silicon substrate processing technology and can be used for realizing multiple photon devices.

Description

A kind of medium slit optical waveguide
Technical field
The present invention relates to the optical waveguide technique field, be specifically related to a kind of medium slit optical waveguide.
Background technology
Traditional dielectric optical waveguide usually with high-index material as waveguide core, as coating, light field mainly concentrates in the waveguide core that high-index material constitutes to be transmitted with low-index material.Because be subjected to the influence of diffraction limit, its size is often relatively large.In the medium slit optical waveguide that proposed first in 2004 can be implemented in the low refractive index dielectric of nano-grade size, carry out the transmission of light signal, broken through the restriction of traditional optical waveguide size.Such waveguide is made up of next-door neighbour's high refractive index medium zone, and the centre in high refractive index medium zone is the low refractive index dielectric district.Its principle of work is utilize on differing dielectric constant material interface electric field component discontinuous, and square being inversely proportional to of its size and dielectric material coefficient.Utilize the uncontinuity of Electric Field Distribution, the optical field distribution density in the low-index material will be much higher than the Electric Field Distribution density of contiguous high-refractive-index regions, thereby realize transmission and the restriction of light field in low-index material.
At present, the medium narrow slit wave-guide has become the focus of optical waveguide research field, obtains the extensive concern of Chinese scholars.Traditional medium narrow slit wave-guide mainly contains two big classes, be respectively horizontal narrow slit waveguide and vertical slits waveguide, these two kinds of waveguides all can only be to the strong mould field constraint of a kind of polarized light (TE polarization or TM polarization), to the restriction ability of another kind of polarized light (TM polarization or TE polarization) then often a little less than.The present invention has then proposed a kind of medium slit optical waveguide structure that can realize the restriction of strong mould field simultaneously to two kinds of polarized lights, by the regulation and control of geometrical scale, also can realize multifrequency natures such as positive and negative birefringence or zero birefraction.This medium narrow slit wave-guide and existing silica-based processing technology are complementary, and can be used for making up multiple photonic device.
Summary of the invention
The invention provides a kind of medium slit optical waveguide structure, its xsect comprises basalis, be positioned at the high index of refraction cushion that is arranged in order from top to bottom, high refractive index medium floor, low refractive index dielectric floor on the basalis, be positioned at the high refractive index medium district, low refractive index dielectric district and high refractive index medium district and the covering that from left to right are arranged in order on the low refractive index dielectric floor; The width of high refractive index medium layer upper surface equates with the width of low refractive index dielectric layer lower surface in the described structure; The width that is positioned at the lower surface in the common zone that constitutes in high refractive index medium district, low refractive index dielectric district and high refractive index medium district on the low refractive index dielectric floor equates with the width of low refractive index dielectric floor upper surface; The height of high index of refraction cushion be institute's transmitting optical signal wavelength 0.006-0.06 doubly; The width on the upper and lower surface of high refractive index medium layer be institute's transmitting optical signal wavelength 0.1-0.3 doubly, the height of high refractive index medium layer be institute's transmitting optical signal wavelength 0.03-0.1 doubly; The height of low refractive index dielectric layer be institute's transmitting optical signal wavelength 0.006-0.06 doubly, the width on the upper and lower surface of low refractive index dielectric layer be institute's transmitting optical signal wavelength 0.1-0.3 doubly; Being positioned at two high refractive index medium districts on the low refractive index dielectric floor and the height in low refractive index dielectric district equates, and its highly be institute's transmitting optical signal wavelength 0.07-0.22 doubly, the width on the upper and lower surface in the common zone that constitutes in low refractive index dielectric district and high refractive index medium district be institute's transmitting optical signal wavelength 0.1-0.3 doubly; The width on the upper and lower surface in low refractive index dielectric district be institute's transmitting optical signal wavelength 0.006-0.06 doubly, and less than the width of low refractive index dielectric layer; Be positioned at the high index of refraction cushion on the basalis, the material in high refractive index medium floor and two high refractive index medium districts is identical or different material, and four material refractive index all is higher than basalis, the material refractive index of low refractive index dielectric layer and covering, basalis, the material of low refractive index dielectric layer and covering is same material or different materials, basalis, the maximal value of the material refractive index of low refractive index dielectric layer and covering and high index of refraction cushion, the ratio of the minimum value of the material refractive index in high refractive index medium floor and two high refractive index medium districts is less than 0.75.
The outer contour shape that is arranged in the cross section in the common zone that constitutes in the high refractive index medium district, low refractive index dielectric district and the high refractive index medium district that from left to right are arranged in order on the low refractive index dielectric floor in the described optical waveguide structure is rectangle or trapezoidal any.
In the described optical waveguide structure outer contour shape in the cross section of high refractive index medium layer and low refractive index dielectric layer be rectangle or trapezoidal in any.
Medium slit optical waveguide of the present invention has the following advantages:
1. recommend matter slit optical waveguide based on be the coupling of traditional silicon waveguide and perpendicular media narrow slit wave-guide, can realize that to the light of two kinds of polarizations stronger mould field limit in falling in " T " font low-refraction slit areas of forming.
2. can effectively regulate and control two kinds of mode characteristics that this waveguide is supported by the adjustment of physical dimension, realize multifrequency natures such as positive and negative birefringence or zero birefraction
3. recommending the matter narrow slit wave-guide can realize with existing ripe silica-based processing technology, and can make up all kinds of integrated photonic devices on this basis, can produce application in addition in fields such as non-linear, optical modulation, light tweezer.
Description of drawings
Fig. 1 is the structural representation of medium slit optical waveguide.Zone 1 is basalis; Zone 2 is the high index of refraction cushion, and it highly is h 2Zone 3 is the high refractive index medium layer, and its lower surface width is w 3, the upper surface width is w 4, highly be h 3; Zone 4 is the low refractive index dielectric layer, and its lower surface width is w 4, the upper surface width is w b, highly be h 4; Zone 5 is the high refractive index medium district in left side, and its lower surface width is w 5b, the upper surface width is w 5t; Zone 7 is the high refractive index medium district on right side, and its lower surface width is w 6b, the upper surface width is w 6t; Zone 6 is the low refractive index dielectric district, and its lower surface width is w 6b, the upper surface width is w 6t; The height in zone 5,6,7 is ht; Zone 8 is covering.
Fig. 2 is the structural drawing of the described medium slit of example optical waveguide.201 is basalis, n sBe its refractive index; 202 is the high index of refraction cushion, and it highly is h b203 is the high refractive index medium layer, and its cross section is square, and it highly is h 1204 is the low refractive index dielectric layer, and its cross section is square, and it highly is h L, n lBe its refractive index; 205 and 207 is the high refractive index medium district, and its cross section is square, w hBe its width; 206 are grazing shot rate dielectric area, and its cross section is square, n lBe its refractive index, w sBe its width; 205,206,207 height equates and is h 2; 205, the width in the cross section in 206, the 207 common zones that constitute, 204 width, 203 width equate, and are w; 202,203,205,207 refractive index is n h; 208 is covering, n cBe its refractive index.
Fig. 3 is the distribution plan of the wavelength of transmitting optical signal electric field intensity of the pattern light field of the described medium slit of example optical waveguide when being 1.55 μ m.What Fig. 3 (a) was corresponding is the TE pattern, and what Fig. 3 (b) was corresponding is the TM pattern.
Fig. 4 is that the mode birefringence of the wavelength of the transmitting optical signal described medium slit of example optical waveguide when being 1.55 μ m is with the change curve of width w.
Fig. 5 be the wavelength of transmitting optical signal when being 1.55 μ m in the described medium slit of the example optical waveguide restriction factor of two kinds of patterns of transmission with the change curve of width w.Fig. 5 (a) is the TE pattern, and Fig. 5 (b) is the TM pattern.
Embodiment
Here study two key properties, mode birefringence and restriction factors of narrow slit wave-guide.
Mode birefringence is defined as B=n Eff(TE)-n Eff(TM), n wherein Eff(TE) and n Eff(TM) represent the effective refractive index of TE and TM polarization mode respectively.
Restriction factor is defined as the ratio of the total luminous power of luminous power in the low refractive index dielectric slit areas and waveguide, and this value can be used for weighing slit areas to the limitation capability of light field.Dui Ying slit areas is down the slit of " T " font in the present invention.
Example:
Fig. 2 is the structural drawing of the described medium slit of example optical waveguide.201 is basalis, n sBe its refractive index; 202 is the high index of refraction cushion, and it highly is h b203 is the high refractive index medium layer, and its cross section is square, and it highly is h 1204 is the low refractive index dielectric layer, and its cross section is square, and it highly is h L205 and 207 is the high refractive index medium district, and its cross section is square, w hBe its width; 206 are grazing shot rate dielectric area, and its cross section is square, n lBe its refractive index, w sBe its width; 205,206,207 height equates and is h 2; 205, the width in the cross section in 206, the 207 common zones that constitute, 204 width, 203 width equate, and are w; 202,203,205,207 refractive index is n h; 208 is covering, n cBe its refractive index.
In this example, the wavelength of the light signal of transmission is chosen to be 1.55 μ m, and 201,204,206,208 material is made as silicon dioxide, and its refractive index is 1.5; 202,203,205,207 material is made as silicon, and its refractive index is 3.5.
In this example, 202 height h b=50nm; 203 height h 1=100nm; 204 height h L=50nm; 206 width w s=50nm; 205,206,207 height h 2=200nm; The span of width w is 200-400nm, correspondingly, and 205 and 207 width w hSpan be 75-175nm.
Use full vector Finite Element Method that the above-mentioned waveguiding structure in the present embodiment is carried out emulation, calculate TE that this medium narrow slit wave-guide of 1.55 mum wavelength places supports and mould field distribution and the mode characteristic of TM pattern.
Fig. 3 is the distribution plan of the wavelength of transmitting optical signal electric field intensity of the pattern light field of the described medium slit of example optical waveguide when being 1.55 μ m.What Fig. 3 (a) was corresponding is the TE pattern, and what Fig. 3 (b) was corresponding is the TM pattern.As seen from the figure, two kinds of patterns all have tangible enhancement effect in slit areas.The field of TE pattern strengthens in the vertical slits zone that mainly concentrates on the top, and the field of TM pattern strengthens in the horizontal narrow slit zone that then mainly concentrates on the below.
Fig. 4 is that the mode birefringence of the wavelength of the transmitting optical signal described medium slit of example optical waveguide when being 1.55 μ m is with the change curve of width w.As seen from the figure, the size by the regulation and control waveguide can obtain multiple birefringent characteristics such as negative birefringence, zero birefraction and positive birefringence.
Fig. 5 be the wavelength of transmitting optical signal when being 1.55 μ m in the described medium slit of the example optical waveguide restriction factor of two kinds of patterns of transmission with the change curve of width w.Fig. 5 (a) is the TE pattern, and Fig. 5 (b) is the TM pattern, and as seen, the restriction factor of two kinds of patterns all increases with width w, and its value is bigger, and the energy that can limit quite a few light field in the slit is described.
It should be noted that embodiment in above each accompanying drawing at last only in order to medium slit optical waveguide structure of the present invention to be described, but unrestricted.Although the present invention has been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.

Claims (3)

1. medium slit optical waveguide structure, its xsect comprise basalis, be positioned at the high index of refraction cushion that is arranged in order from top to bottom, high refractive index medium floor, low refractive index dielectric floor on the basalis, be positioned at the high refractive index medium district, low refractive index dielectric district and high refractive index medium district and the covering that from left to right are arranged in order on the low refractive index dielectric floor; The width of high refractive index medium layer upper surface equates with the width of low refractive index dielectric layer lower surface in the described structure; The width that is positioned at the lower surface in the common zone that constitutes in high refractive index medium district, low refractive index dielectric district and high refractive index medium district on the low refractive index dielectric floor equates with the width of low refractive index dielectric floor upper surface; The height of high index of refraction cushion be institute's transmitting optical signal wavelength 0.006-0.06 doubly; The width on the upper and lower surface of high refractive index medium layer be institute's transmitting optical signal wavelength 0.1-0.3 doubly, the height of high refractive index medium layer be institute's transmitting optical signal wavelength 0.03-0.1 doubly; The height of low refractive index dielectric layer be institute's transmitting optical signal wavelength 0.006-0.06 doubly, the width on the upper and lower surface of low refractive index dielectric layer be institute's transmitting optical signal wavelength 0.1-0.3 doubly; Being positioned at two high refractive index medium districts on the low refractive index dielectric floor and the height in low refractive index dielectric district equates, and its highly be institute's transmitting optical signal wavelength 0.07-0.22 doubly, the width on the upper and lower surface in the common zone that constitutes in low refractive index dielectric district and high refractive index medium district be institute's transmitting optical signal wavelength 0.1-0.3 doubly; The width on the upper and lower surface in low refractive index dielectric district be institute's transmitting optical signal wavelength 0.006-0.06 doubly, and less than the width of low refractive index dielectric layer; Be positioned at the high index of refraction cushion on the basalis, the material in high refractive index medium floor and two high refractive index medium districts is identical or different material, and four material refractive index all is higher than basalis, the material refractive index of low refractive index dielectric layer and covering, basalis, the material of low refractive index dielectric layer and covering is same material or different materials, basalis, the maximal value of the material refractive index of low refractive index dielectric layer and covering and high index of refraction cushion, the ratio of the minimum value of the material refractive index in high refractive index medium floor and two high refractive index medium districts is less than 0.75.
2. optical waveguide structure according to claim 1, it is characterized in that the outer contour shape that is arranged in the cross section in the common zone that constitutes in the high refractive index medium district, low refractive index dielectric district and the high refractive index medium district that from left to right are arranged in order on the low refractive index dielectric floor in the described structure is rectangle or trapezoidal any.
3. optical waveguide structure according to claim 1 is characterized in that, in the described structure outer contour shape in the cross section of high refractive index medium layer and low refractive index dielectric layer be rectangle or trapezoidal in any.
CN 201210056637 2012-03-06 2012-03-06 Medium slit optical waveguide Expired - Fee Related CN102608701B (en)

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Publication number Priority date Publication date Assignee Title
CN103558661B (en) * 2013-11-11 2016-04-13 东南大学 A kind of integrated polarizing converter based on silica-based L shape waveguiding structure
CN104267463B (en) * 2014-10-23 2016-03-02 重庆大学 A kind of orthogonal slits optical waveguide structure and manufacture method
CN107076923A (en) * 2014-12-05 2017-08-18 华为技术有限公司 Fiber waveguide
CN105758522A (en) * 2016-04-19 2016-07-13 中国科学院上海技术物理研究所 Submicron-thickness optical slit taking sapphire as substrate
US10746921B2 (en) * 2018-07-20 2020-08-18 Globalfoundries Inc. Stacked waveguide arrangements providing field confinement
CN110346950B (en) * 2019-06-06 2020-08-28 浙江大学 Electric control depolarizer based on cross slit waveguide
CN113031151B (en) * 2021-03-30 2022-09-30 宁波大学 Chalcogenide slit optical waveguide structure and preparation method thereof
CN114156625A (en) * 2021-12-06 2022-03-08 南方科技大学 Resonance chip and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101281273A (en) * 2008-05-05 2008-10-08 北京航空航天大学 Ultra-high non-linear photon crystal optical fiber based on narrow slit effect
CN101738679A (en) * 2008-11-21 2010-06-16 北京航空航天大学 Slit waveguide-based Bragg grating filter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101281273A (en) * 2008-05-05 2008-10-08 北京航空航天大学 Ultra-high non-linear photon crystal optical fiber based on narrow slit effect
CN101738679A (en) * 2008-11-21 2010-06-16 北京航空航天大学 Slit waveguide-based Bragg grating filter

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