CN102608701A - Medium slit optical waveguide - Google Patents
Medium slit optical waveguide Download PDFInfo
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- CN102608701A CN102608701A CN2012100566373A CN201210056637A CN102608701A CN 102608701 A CN102608701 A CN 102608701A CN 2012100566373 A CN2012100566373 A CN 2012100566373A CN 201210056637 A CN201210056637 A CN 201210056637A CN 102608701 A CN102608701 A CN 102608701A
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Abstract
The invention discloses a medium slit optical waveguide. The cross section of the waveguide structure comprises a substrate layer (1), a high-refractive index buffer layer (2), a high-refractive index medium layer (3), a low-refractive index medium layer (4), a high-refractive index medium area (5), a low-refractive index medium area (6), a high-refractive index medium area (7) and a wrapping layer (8), wherein the high-refractive index buffer layer (2), the high-refractive index medium layer (3) and the low-refractive index medium layer (4) are sequentially arranged from bottom to top on the substrate layer; and the high-refractive index medium area (5), the low-refractive index medium area (6) and the high-refractive index medium area (7) are sequentially arranged from left to right on the low-refractive index medium layer. The waveguide can realize relatively strong mode field restriction on two polarized lights at the same time, and can realize multiple characteristics such as positive and negative birefringence, zero birefringence and the like through regulation and control on the structure size. The medium slit waveguide is matched with the existing silicon substrate processing technology and can be used for realizing multiple photon devices.
Description
Technical field
The present invention relates to the optical waveguide technique field, be specifically related to a kind of medium slit optical waveguide.
Background technology
Traditional dielectric optical waveguide usually with high-index material as waveguide core, as coating, light field mainly concentrates in the waveguide core that high-index material constitutes to be transmitted with low-index material.Because receive the influence of diffraction limit, its size is often relatively large.In the medium slit optical waveguide that proposed first in 2004 can be implemented in the low refractive index dielectric of nano-grade size, carry out the transmission of light signal, broken through the restriction of traditional optical waveguide size.Such waveguide is made up of next-door neighbour's high refractive index medium zone, and the centre in high refractive index medium zone is the low refractive index dielectric district.Its principle of work is be utilized in electric field component on the differing dielectric constant material interface discontinuous, and square being inversely proportional to of its size and dielectric material coefficient.Utilize the uncontinuity of Electric Field Distribution, the optical field distribution density in the low-index material will be much higher than the Electric Field Distribution density of contiguous high-refractive-index regions, thereby realize transmission and the restriction of light field in low-index material.
At present, the medium narrow slit wave-guide has become the focus of optical waveguide research field, obtains the extensive concern of Chinese scholars.Traditional medium narrow slit wave-guide mainly contains two big types; Be respectively horizontal narrow slit waveguide and vertical slits waveguide; These two kinds of waveguides all can only be to the strong mould field constraint of a kind of polarized light (TE polarization or TM polarization), to the restriction ability of another kind of polarized light (TM polarization or TE polarization) then often a little less than.The present invention has then proposed a kind of medium slit optical waveguide structure that can realize the restriction of strong mould field simultaneously to two kinds of polarized lights, through the regulation and control of geometrical scale, also can realize multifrequency natures such as positive and negative birefringence or zero birefraction.This medium narrow slit wave-guide and existing silica-based processing technology are complementary, and can be used for making up multiple photonic device.
Summary of the invention
The invention provides a kind of medium slit optical waveguide structure, its xsect comprises basalis, be positioned at the high index of refraction cushion that is arranged in order from top to bottom, high refractive index medium layer, low refractive index dielectric layer on the basalis, be positioned at the high refractive index medium district, low refractive index dielectric district and high refractive index medium district and the covering that from left to right are arranged in order on the low refractive index dielectric layer; The width of high refractive index medium layer upper surface equates with the width of low refractive index dielectric layer lower surface in the said structure; The width that is positioned at the lower surface in the common zone that constitutes in high refractive index medium district, low refractive index dielectric district and high refractive index medium district on the low refractive index dielectric layer equates with the width of low refractive index dielectric layer upper surface; The height of high index of refraction cushion be institute's transmitting optical signal wavelength 0.006-0.06 doubly; The width on the upper and lower surface of high refractive index medium layer be institute's transmitting optical signal wavelength 0.1-0.3 doubly, the height of high refractive index medium layer be institute's transmitting optical signal wavelength 0.03-0.1 doubly; The height of low refractive index dielectric layer be institute's transmitting optical signal wavelength 0.006-0.06 doubly, the width on the upper and lower surface of low refractive index dielectric layer be institute's transmitting optical signal wavelength 0.1-0.3 doubly; Two the high refractive index medium districts and the height in low refractive index dielectric district that are positioned on the low refractive index dielectric layer equate; And its highly be institute's transmitting optical signal wavelength 0.07-0.22 doubly, the width on the upper and lower surface in the common zone that constitutes in low refractive index dielectric district and high refractive index medium district is 0.1-0.3 times of wavelength of institute's transmitting optical signal; The width on the upper and lower surface in low refractive index dielectric district be institute's transmitting optical signal wavelength 0.006-0.06 doubly, and less than the width of low refractive index dielectric layer; The material that is positioned at high index of refraction cushion, high refractive index medium layer and two high refractive index medium districts on the basalis is identical or different material; And four material refractive index all is higher than the material refractive index of basalis, low refractive index dielectric layer and covering; The material of basalis, low refractive index dielectric layer and covering is same material or different materials, and the ratio of the minimum value of the material refractive index in the maximal value of the material refractive index of basalis, low refractive index dielectric layer and covering and high index of refraction cushion, high refractive index medium layer and two high refractive index medium districts is less than 0.75.
The outer contour shape that is arranged in the cross section in the common zone that constitutes in the high refractive index medium district, low refractive index dielectric district and the high refractive index medium district that from left to right are arranged in order on the low refractive index dielectric layer in the said optical waveguide structure is a rectangle or trapezoidal any.
In the said optical waveguide structure outer contour shape in the cross section of high refractive index medium layer and low refractive index dielectric layer be rectangle or trapezoidal in any.
Medium slit optical waveguide of the present invention has the following advantages:
1. recommend matter slit optical waveguide based on be the coupling of traditional silicon waveguide and perpendicular media narrow slit wave-guide, can realize that to the light of two kinds of polarizations stronger mould field limit in falling in " T " font low-refraction slit areas of forming.
2. can effectively regulate and control two kinds of mode characteristics that this waveguide is supported through the adjustment of physical dimension, realize multifrequency natures such as positive and negative birefringence or zero birefraction
3. recommend the matter narrow slit wave-guide and can use existing ripe silica-based processing technology to realize, and can make up all kinds of integrated photonic devices on this basis, can in fields such as non-linear, optical modulation, light tweezer, produce application in addition.
Description of drawings
Fig. 1 is the structural representation of medium slit optical waveguide.Zone 1 is a basalis; Zone 2 is the high index of refraction cushion, and it highly is h
2Zone 3 is the high refractive index medium layer, and its lower surface width is w
3, the upper surface width is w
4, highly be h
3Zone 4 is the low refractive index dielectric layer, and its lower surface width is w
4, the upper surface width is w
b, highly be h
4Zone 5 is the high refractive index medium district in left side, and its lower surface width is w
5b, the upper surface width is w
5tZone 7 is the high refractive index medium district on right side, and its lower surface width is w
6b, the upper surface width is w
6tZone 6 is the low refractive index dielectric district, and its lower surface width is w
6b, the upper surface width is w
6tThe height in zone 5,6,7 is h
tZone 8 is a covering.
Fig. 2 is the structural drawing of the said medium slit of instance optical waveguide.201 is basalis, n
sBe its refractive index; 202 is the high index of refraction cushion, and it highly is h
b203 is the high refractive index medium layer, and its cross section is square, and it highly is h
1204 is the low refractive index dielectric layer, and its cross section is square, and it highly is h
l, n
1Be its refractive index; 205 and 207 is the high refractive index medium district, and its cross section is square, w
hBe its width; 206 are grazing shot rate dielectric area, and its cross section is square, n
1Be its refractive index, w
sBe its width; 205,206,207 height equates and is h
2205, the width in the cross section in 206, the 207 common zones that constitute, 204 width, 203 width equate, and are w; 202,203,205,207 refractive index is n
h208 is covering, n
cBe its refractive index.
Fig. 3 is the distribution plan of the wavelength of transmitting optical signal electric field intensity of the pattern light field of the said medium slit of instance optical waveguide when being 1.55 μ m.What Fig. 3 (a) was corresponding is the TE pattern, and what Fig. 3 (b) was corresponding is the TM pattern.
Fig. 4 is the change curve of the mode birefringence of the wavelength of the transmitting optical signal said medium slit of instance optical waveguide when being 1.55 μ m with width w.
Fig. 5 be the wavelength of transmitting optical signal when being 1.55 μ m in the said medium slit of the instance optical waveguide restriction factor of two kinds of patterns of transmission with the change curve of width w.Fig. 5 (a) is the TE pattern, and Fig. 5 (b) is the TM pattern.
Embodiment
Here study two key properties, mode birefringence and restriction factors of narrow slit wave-guide.
Mode birefringence is defined as B=n
Eff(TE)-n
Eff(TM), n wherein
Eff(TE) and n
Eff(TM) represent the effective refractive index of TE and TM polarization mode respectively.
Restriction factor is defined as the ratio of the total luminous power of luminous power and waveguide in the low refractive index dielectric slit areas, and this value can be used for weighing the limitation capability of slit areas to light field.Corresponding in the present invention slit areas is down the slit of " T " font.
Instance:
Fig. 2 is the structural drawing of the said medium slit of instance optical waveguide.201 is basalis, n
sBe its refractive index; 202 is the high index of refraction cushion, and it highly is h
b203 is the high refractive index medium layer, and its cross section is square, and it highly is h
1204 is the low refractive index dielectric layer, and its cross section is square, and it highly is h
l205 and 207 is the high refractive index medium district, and its cross section is square, w
hBe its width; 206 are grazing shot rate dielectric area, and its cross section is square, n
1Be its refractive index, w
sBe its width; 205,206,207 height equates and is h
2205, the width in the cross section in 206, the 207 common zones that constitute, 204 width, 203 width equate, and are w; 202,203,205,207 refractive index is n
h208 is covering, n
cBe its refractive index.
In this example, the wavelength of the light signal of transmission is chosen to be 1.55 μ m, and 201,204,206,208 material is made as silicon dioxide, and its refractive index is 1.5; 202,203,205,207 material is made as silicon, and its refractive index is 3.5.
In this example, 202 height h
b=50nm; 203 height h
1=100nm; 204 height h
l=50nm; 206 width w
s=50nm; 205,206,207 height h
2=200nm; The span of width w is 200-400nm, correspondingly, and 205 and 207 width w
hSpan be 75-175nm.
Use full vector Finite Element Method that the above-mentioned waveguiding structure in the present embodiment is carried out emulation, calculate the TE that this medium narrow slit wave-guide of 1.55 mum wavelength places supported and the mould field distribution and the mode characteristic of TM pattern.
Fig. 3 is the distribution plan of the wavelength of transmitting optical signal electric field intensity of the pattern light field of the said medium slit of instance optical waveguide when being 1.55 μ m.What Fig. 3 (a) was corresponding is the TE pattern, and what Fig. 3 (b) was corresponding is the TM pattern.Visible by figure, two kinds of patterns all have tangible enhancement effect in slit areas.The field of TE pattern strengthens in the vertical slits zone that mainly concentrates on the top, and the field of TM pattern strengthens in the horizontal narrow slit zone that then mainly concentrates on the below.
Fig. 4 is the change curve of the mode birefringence of the wavelength of the transmitting optical signal said medium slit of instance optical waveguide when being 1.55 μ m with width w.Visible by figure, the size through the regulation and control waveguide can obtain multiple birefringent characteristics such as negative birefringence, zero birefraction and positive birefringence.
Fig. 5 be the wavelength of transmitting optical signal when being 1.55 μ m in the said medium slit of the instance optical waveguide restriction factor of two kinds of patterns of transmission with the change curve of width w.Fig. 5 (a) is the TE pattern, and Fig. 5 (b) is the TM pattern, and visible, the restriction factor of two kinds of patterns all increases with width w, and its value is bigger, and the energy that can limit quite a few light field in the slit is described.
What should explain at last is, more than embodiment in each accompanying drawing only in order to medium slit optical waveguide structure of the present invention to be described, but unrestricted.Although the present invention is specified with reference to embodiment; Those of ordinary skill in the art is to be understood that; Technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and the scope of technical scheme of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (3)
1. medium slit optical waveguide structure, its xsect comprise basalis, be positioned at the high index of refraction cushion that is arranged in order from top to bottom, high refractive index medium layer, low refractive index dielectric layer on the basalis, be positioned at the high refractive index medium district, low refractive index dielectric district and high refractive index medium district and the covering that from left to right are arranged in order on the low refractive index dielectric layer; The width of high refractive index medium layer upper surface equates with the width of low refractive index dielectric layer lower surface in the said structure; The width that is positioned at the lower surface in the common zone that constitutes in high refractive index medium district, low refractive index dielectric district and high refractive index medium district on the low refractive index dielectric layer equates with the width of low refractive index dielectric layer upper surface; The height of high index of refraction cushion be institute's transmitting optical signal wavelength 0.006-0.06 doubly; The width on the upper and lower surface of high refractive index medium layer be institute's transmitting optical signal wavelength 0.1-0.3 doubly, the height of high refractive index medium layer be institute's transmitting optical signal wavelength 0.03-0.1 doubly; The height of low refractive index dielectric layer be institute's transmitting optical signal wavelength 0.006-0.06 doubly, the width on the upper and lower surface of low refractive index dielectric layer be institute's transmitting optical signal wavelength 0.1-0.3 doubly; Two the high refractive index medium districts and the height in low refractive index dielectric district that are positioned on the low refractive index dielectric layer equate; And its highly be institute's transmitting optical signal wavelength 0.07-0.22 doubly, the width on the upper and lower surface in the common zone that constitutes in low refractive index dielectric district and high refractive index medium district is 0.1-0.3 times of wavelength of institute's transmitting optical signal; The width on the upper and lower surface in low refractive index dielectric district be institute's transmitting optical signal wavelength 0.006-0.06 doubly, and less than the width of low refractive index dielectric layer; The material that is positioned at high index of refraction cushion, high refractive index medium layer and two high refractive index medium districts on the basalis is identical or different material; And four material refractive index all is higher than the material refractive index of basalis, low refractive index dielectric layer and covering; The material of basalis, low refractive index dielectric layer and covering is same material or different materials, and the ratio of the minimum value of the material refractive index in the maximal value of the material refractive index of basalis, low refractive index dielectric layer and covering and high index of refraction cushion, high refractive index medium layer and two high refractive index medium districts is less than 0.75.
2. optical waveguide structure according to claim 1; It is characterized in that the outer contour shape that is arranged in the cross section in the common zone that constitutes in the high refractive index medium district, low refractive index dielectric district and the high refractive index medium district that from left to right are arranged in order on the low refractive index dielectric layer in the said structure is a rectangle or trapezoidal any.
3. optical waveguide structure according to claim 1 is characterized in that, in the said structure outer contour shape in the cross section of high refractive index medium layer and low refractive index dielectric layer be rectangle or trapezoidal in any.
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| CN 201210056637 CN102608701B (en) | 2012-03-06 | 2012-03-06 | Medium slit optical waveguide |
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| CN 201210056637 CN102608701B (en) | 2012-03-06 | 2012-03-06 | Medium slit optical waveguide |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103558661A (en) * | 2013-11-11 | 2014-02-05 | 东南大学 | Integrated polarization converter based on silicon-based L-shaped waveguide structure |
| CN104267463A (en) * | 2014-10-23 | 2015-01-07 | 重庆大学 | Novel orthogonal slit optical waveguide structure and manufacturing method |
| WO2016086412A1 (en) * | 2014-12-05 | 2016-06-09 | 华为技术有限公司 | Optical waveguide |
| CN106644069A (en) * | 2016-04-19 | 2017-05-10 | 中国科学院上海技术物理研究所 | Optical slit with submicron thickness and with sapphire as substrate |
| US20200026000A1 (en) * | 2018-07-20 | 2020-01-23 | Globalfoundries Inc. | Stacked waveguide arrangements providing field confinement |
| WO2020244322A1 (en) * | 2019-06-06 | 2020-12-10 | 浙江大学 | Electronically controlled depolarizer based on crossed-slit waveguide |
| CN113031151A (en) * | 2021-03-30 | 2021-06-25 | 宁波大学 | Chalcogenide slit optical waveguide structure and preparation method thereof |
| WO2023104012A1 (en) * | 2021-12-06 | 2023-06-15 | 南方科技大学 | Resonant chip and manufacturing method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101281273A (en) * | 2008-05-05 | 2008-10-08 | 北京航空航天大学 | Ultra-high non-linear photon crystal optical fiber based on narrow slit effect |
| CN101738679A (en) * | 2008-11-21 | 2010-06-16 | 北京航空航天大学 | Slit waveguide-based Bragg grating filter |
-
2012
- 2012-03-06 CN CN 201210056637 patent/CN102608701B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101281273A (en) * | 2008-05-05 | 2008-10-08 | 北京航空航天大学 | Ultra-high non-linear photon crystal optical fiber based on narrow slit effect |
| CN101738679A (en) * | 2008-11-21 | 2010-06-16 | 北京航空航天大学 | Slit waveguide-based Bragg grating filter |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103558661A (en) * | 2013-11-11 | 2014-02-05 | 东南大学 | Integrated polarization converter based on silicon-based L-shaped waveguide structure |
| CN104267463A (en) * | 2014-10-23 | 2015-01-07 | 重庆大学 | Novel orthogonal slit optical waveguide structure and manufacturing method |
| CN104267463B (en) * | 2014-10-23 | 2016-03-02 | 重庆大学 | A kind of orthogonal slits optical waveguide structure and manufacture method |
| CN107076923A (en) * | 2014-12-05 | 2017-08-18 | 华为技术有限公司 | Fiber waveguide |
| WO2016086412A1 (en) * | 2014-12-05 | 2016-06-09 | 华为技术有限公司 | Optical waveguide |
| CN106644069B (en) * | 2016-04-19 | 2019-04-02 | 中国科学院上海技术物理研究所 | It is a kind of using sapphire as the optical slot of the submicrometer-thick of substrate |
| CN106644069A (en) * | 2016-04-19 | 2017-05-10 | 中国科学院上海技术物理研究所 | Optical slit with submicron thickness and with sapphire as substrate |
| US20200026000A1 (en) * | 2018-07-20 | 2020-01-23 | Globalfoundries Inc. | Stacked waveguide arrangements providing field confinement |
| US10746921B2 (en) * | 2018-07-20 | 2020-08-18 | Globalfoundries Inc. | Stacked waveguide arrangements providing field confinement |
| WO2020244322A1 (en) * | 2019-06-06 | 2020-12-10 | 浙江大学 | Electronically controlled depolarizer based on crossed-slit waveguide |
| CN113031151A (en) * | 2021-03-30 | 2021-06-25 | 宁波大学 | Chalcogenide slit optical waveguide structure and preparation method thereof |
| CN113031151B (en) * | 2021-03-30 | 2022-09-30 | 宁波大学 | Chalcogenide slit optical waveguide structure and preparation method thereof |
| WO2023104012A1 (en) * | 2021-12-06 | 2023-06-15 | 南方科技大学 | Resonant chip and manufacturing method therefor |
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