CN106644069B - It is a kind of using sapphire as the optical slot of the submicrometer-thick of substrate - Google Patents
It is a kind of using sapphire as the optical slot of the submicrometer-thick of substrate Download PDFInfo
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- CN106644069B CN106644069B CN201610893673.3A CN201610893673A CN106644069B CN 106644069 B CN106644069 B CN 106644069B CN 201610893673 A CN201610893673 A CN 201610893673A CN 106644069 B CN106644069 B CN 106644069B
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- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 230000003287 optical effect Effects 0.000 title claims abstract description 29
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 17
- 239000010980 sapphire Substances 0.000 title claims abstract description 17
- 229910001120 nichrome Inorganic materials 0.000 claims abstract description 10
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 4
- 238000003331 infrared imaging Methods 0.000 abstract description 3
- 238000001228 spectrum Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 40
- 101700004678 SLIT3 Proteins 0.000 description 7
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000004297 night vision Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/04—Slit arrangements slit adjustment
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Laminated Bodies (AREA)
- Spectrometry And Color Measurement (AREA)
- Optical Filters (AREA)
Abstract
The invention discloses a kind of using sapphire as the optical slot of the submicrometer-thick of substrate, the slit forms slot pattern by the nichrome delustring film layer that the plane of incidence in sapphire sheet substrate is first coated with one layer of submicron order thickness, is then coated with the anti-reflection film of corresponding wave band in the plane of incidence and exit facet respectively again.The slit can make in 0.95~2.50 micron spectral section, and the spectral transmittance in transparent slits region is greater than 97%, and the spectrum mean transmissivity of opaque region is lower than 0.1%.The slit width and reconfigurable, linear precision is up to 1 micron.Slit thickness is only 200~300 nanometers, can effectively remove stray light, and narrow slit structure is succinct, and positioning accuracy is high.The slit can be applied in the short-wave infrareds instrument such as short-wave infrared imaging spectrometer.
Description
Technical field
The present invention relates to a kind of optical slots, more particularly to a kind of using sapphire as the optics of the submicrometer-thick of substrate
Slit.
Background technique
Slit is the decision instrument point in a kind of spectrometer or spectrophotometer being widely used in detector array
The important part of resolution index.Now widely used slit is mechanical slot, and this slit is since fine crack width is very narrow, one
Minimum impurity is fallen into denier fine crack, is difficult to clean up, influence whether the responsiveness of instrument and resolution ratio is had an impact, simultaneously
There are also processing difficulties, the disadvantages of deformation easy to damage.
Short-wave infrared can provide the information that visible light, lll night vision, medium wave, LONG WAVE INFRARED cannot provide.Shortwave is red
Outer imaging has many advantages, such as high-resolution, is not necessarily to cryogenic refrigeration, imaging round the clock, high sensitivity, can be widely applied to space remote sensing
The fields such as detection, night vision and biomedicine.
Submicron order short-wave infrared is anti-reflection, and slit uses optical thin film method to form slit, is reduced as far as possible by anti-reflection film
Loss of the optical base-substrate for short-wave infrared energy.The slit has that easy cleaning, structure is simple, positioning accuracy is high, indeformable etc.
Advantage has very high application value in short-wave infrared imaging spectrometer.
Summary of the invention
Present invention proposition devises a kind of using sapphire sheet as the optical slot of the submicrometer-thick of substrate, slit member
Part can make slit clear area have good translucent effect in 0.95~2.50 μm of section, can be applied to short-wave infrared imaging
In.
The technical scheme is that forming slit figure by first passing through photo etched mask in the plane of incidence of sapphire sheet substrate
After shape, it is coated with one layer of nichrome delustring film layer and forms slit, be then coated with short-wave infrared in the plane of incidence and exit facet respectively again
Anti-reflection film.
Slit of the invention is by substrate 1, plane of incidence delustring film layer 2, slit 3, plane of incidence short-wave infrared anti-reflection film 4 and outgoing
Face short-wave infrared anti-reflection film 5 forms.Delustring film layer 2 and short-wave infrared antireflective coating 4 are deposited in the plane of incidence of substrate, in substrate
Exit facet deposits short-wave infrared anti-reflection film 5.
The specific structure of submicron order optical slot are as follows: slit 3 is located on the plane of incidence of substrate 1, in the plane of incidence of substrate 1
Slit 3 has been coated with nichrome delustring film layer 2 with exterior domain, plates on the slit 3 of incident surface side and nichrome delustring film layer 2
There is plane of incidence anti-reflection film 4；Exit facet anti-reflection film 5 is coated in outgoing surface side；
The nichrome delustring film layer 2 with a thickness of 200~300 nanometers；
The slit 3 is the optical slot of 200~300 nanometer thickness.
The invention has the advantages that: propose a kind of using sapphire sheet as the submicron order optical slot of substrate, which can
So that the spectral transmittance in transparent slits region is greater than 97%, opaque region in 0.95~2.50 micron spectral section
Spectrum mean transmissivity is lower than 0.1%.Slit thickness is only 200~300 nanometers, and width and reconfigurable, linear precision is up to 1
Micron.The slit can effectively remove stray light, and narrow slit structure is succinct, and positioning accuracy is high.The slit can be applied to short-wave infrared at
As in the short-wave infrareds instruments such as spectrometer.
Detailed description of the invention
Fig. 1 is a kind of using sapphire as the schematic diagram of the section structure of the submicron order optical slot of substrate.(1) is base in figure
Piece, (2) position plane of incidence delustring film layer, (3) are slit 3, (4) are plane of incidence anti-reflection film, (5) are exit facet anti-reflection film.
Fig. 2 is a kind of using sapphire as the sample photo figure of the anti-reflection slit of submicron order short-wave infrared of substrate.
Fig. 3 is a kind of using sapphire as the anti-reflection slit sample slit width optical microphotograph of the submicron order short-wave infrared of substrate
Mirror test chart.Slit width is about 18.3 microns.
Fig. 4 is a kind of bent by the spectral transmittance of the anti-reflection slit clear area of the submicron order short-wave infrared of substrate of sapphire
Line.Transmitance is greater than 97%.
Fig. 5 is a kind of using sapphire as the spectral transmittance of the anti-reflection slit non-transparent area of the submicron order short-wave infrared of substrate
Curve.Mean transmissivity is less than 0.1%.
Specific embodiment
A specific embodiment of the invention is further described with reference to the accompanying drawing.
The present invention is a kind of using sapphire as 0.95~2.50 anti-reflection slit of micron-submicron grade short-wave infrared of substrate, first
The photoetching offset plate figure for first passing through slit required for photo etched mask is formed in process for sapphire-based on piece, is then plated on photoetching offset plate figure
Delustring film layer 2 processed.
It is positive photoresist that photoresist of the present invention, which is selected,.
2 thin-film material of plane of incidence delustring film layer of the present invention selects nichrome wire, the side evaporated using tungsten Resistant heating
Formula evaporates nichrome wire material.The vacuum chamber environment temperature that depositing temperature when embryo deposit is 20 DEG C.Film deposition thickness
It is 200-300 nanometers.2 thickness of delustring film layer is slit thickness, is submicron order.
The present invention is after being coated with plane of incidence delustring film layer 2, by alcohol or acetone and other organic solvent by substrate-incident face
Photoetching offset plate figure cleans up, and forms 3 transparent region of slit.It is about 18.3 microns that slit 3, which tests width by optical microscopy,.
The anti-reflection slit of short-wave infrared of the present invention, the anti-reflection film of substrate two sides are multilayer film non-regular thin film structure.Membrane system is heavy
Product uses the monitor mode of quartz crystal monitoring and direct optical monitoring complementation, controls thicknesses of layers deposition errors, is approached
The result of design.
4 Selection Center wavelength of plane of incidence anti-reflection film of the present invention is 1.75 μm, passes through Film Design software optimization, film structure
Are as follows:
Substrate/0.194H 0.195L 0.533H 0.087L 1.122H 0.159L 0.374H 0.882L/ air
Wherein, H indicates a λ0The TiO of/4 optical thicknesses2Film layer, L indicate a λ0The SiO of/4 optical thicknesses2Film layer, λ0
For center wavelength, the number before H and L is the thickness proportion coefficient of film layer.
1.75 μm of 5 Selection Center wavelength of exit facet anti-reflection film of the present invention, pass through Film Design software optimization, film structure
Are as follows:
Substrate/0.198H 0.193L 0.538H 0.083L 1.126H 0.16L 0.374H 0.88L/ air
Wherein, H indicates a λ0The TiO of/4 optical thicknesses2Film layer, L indicate a λ0The SiO of/4 optical thicknesses2Film layer,
Central wavelength lambda0It is 1.75 μm, the number before H, L is the thickness proportion coefficient of film layer.
Ion source assisted is used when anti-reflection film of the present invention deposits, when plated film fills the oxygen of 15sccm, ion source anode
Voltage is 190 volts, and cathode current is 6 amperes.Substrate deposition temperature is controlled at 250 ± 2 DEG C.Film deposition is added using electron gun
Thermal evaporation, TiO2Film deposition rate is 0.2nm/s, SiO2Film deposition rate is 1nm/s.
Claims (2)
1. a kind of using sapphire as the optical slot of the submicrometer-thick of substrate, it is characterised in that:
The structure of the submicron order optical slot are as follows: slit (3) is located on the plane of incidence of substrate (1), in entering for substrate (1)
It penetrates face slit (3) and nichrome delustring film layer (2) has been coated with exterior domain, the slit (3) and nichrome in incident surface side disappear
Plane of incidence anti-reflection film (4) are coated in light film layer (2)；Exit facet anti-reflection film (5) are coated in outgoing surface side；
The nichrome delustring film layer (2) with a thickness of 200~300 nanometers；
The slit (3) is the optical slot with a thickness of 200~300 nanometers.
2. according to claim 1 a kind of using sapphire as the optical slot of the submicrometer-thick of substrate, feature exists
In: the plane of incidence anti-reflection film (4) and exit facet anti-reflection film (5) of the optical slot are used for 0.95~2.50 μm of short-wave infrared wave
Section；
The film structure of the plane of incidence anti-reflection film (4) of the submicron order optical slot are as follows:
Substrate/0.194H 0.195L 0.533H 0.087L 1.122H 0.159L 0.374H 0.882L/ air wherein, H table
Show a λ0The TiO of/4 optical thicknesses2Film layer, L indicate a λ0The SiO of/4 optical thicknesses2Film layer, λ0For center wavelength, H and L
Preceding number is the λ of film layer0The proportionality coefficient of/4 optical thicknesses；
The film structure of the exit facet anti-reflection film (5) of the submicron order optical slot are as follows:
Wherein, H is indicated substrate/0.198H 0.193L 0.538H 0.083L 1.126H 0.16L 0.374H 0.88L/ air
One λ0The TiO of/4 optical thicknesses2Film layer, L indicate a λ0The SiO of/4 optical thicknesses2Film layer, λ0For center wavelength, before H and L
Number be film layer λ0The proportionality coefficient of/4 optical thicknesses.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2016102430713 | 2016-04-15 | ||
| CN201610243071.3A CN105758522A (en) | 2016-04-19 | 2016-04-19 | Submicron-thickness optical slit taking sapphire as substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106644069A CN106644069A (en) | 2017-05-10 |
| CN106644069B true CN106644069B (en) | 2019-04-02 |
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Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610243071.3A Pending CN105758522A (en) | 2016-04-15 | 2016-04-19 | Submicron-thickness optical slit taking sapphire as substrate |
| CN201621119739.5U Withdrawn - After Issue CN206146527U (en) | 2016-04-15 | 2016-10-13 | Use optics slit of sapphire as submicron thickness of basement |
| CN201610893673.3A Active CN106644069B (en) | 2016-04-19 | 2016-10-13 | It is a kind of using sapphire as the optical slot of the submicrometer-thick of substrate |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
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| CN201610243071.3A Pending CN105758522A (en) | 2016-04-15 | 2016-04-19 | Submicron-thickness optical slit taking sapphire as substrate |
| CN201621119739.5U Withdrawn - After Issue CN206146527U (en) | 2016-04-15 | 2016-10-13 | Use optics slit of sapphire as submicron thickness of basement |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105758522A (en) * | 2016-04-19 | 2016-07-13 | 中国科学院上海技术物理研究所 | Submicron-thickness optical slit taking sapphire as substrate |
| CN114815004B (en) * | 2022-05-20 | 2024-03-15 | 无锡泓瑞航天科技有限公司 | Infrared metallized all-pass type sapphire window sheet and preparation method and application thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752832A (en) * | 2005-10-24 | 2006-03-29 | 中国科学院光电技术研究所 | Light beam control method based on metal nano-seam |
| CN101750651A (en) * | 2009-11-25 | 2010-06-23 | 南京大学 | Electromagnetic wave transmission device with regulative and controllable magnetic field based on sub-monolayer wavelength metal grating and preparation |
| CN102590940A (en) * | 2012-03-06 | 2012-07-18 | 北京航空航天大学 | Open type surface plasmon polariton slit optical waveguide |
| CN102608701A (en) * | 2012-03-06 | 2012-07-25 | 北京航空航天大学 | Medium slit optical waveguide |
| CN103018832A (en) * | 2012-12-31 | 2013-04-03 | 江苏大学 | Polarization beam splitter |
| CN104049288A (en) * | 2014-07-11 | 2014-09-17 | 重庆大学 | Continuous amplitude regulation and control ultra oscillation focusing lens based on single layer metal slit structure array |
| CN206146527U (en) * | 2016-04-15 | 2017-05-03 | 中国科学院上海技术物理研究所 | Use optics slit of sapphire as submicron thickness of basement |
-
2016
- 2016-04-19 CN CN201610243071.3A patent/CN105758522A/en active Pending
- 2016-10-13 CN CN201621119739.5U patent/CN206146527U/en not_active Withdrawn - After Issue
- 2016-10-13 CN CN201610893673.3A patent/CN106644069B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752832A (en) * | 2005-10-24 | 2006-03-29 | 中国科学院光电技术研究所 | Light beam control method based on metal nano-seam |
| CN101750651A (en) * | 2009-11-25 | 2010-06-23 | 南京大学 | Electromagnetic wave transmission device with regulative and controllable magnetic field based on sub-monolayer wavelength metal grating and preparation |
| CN102590940A (en) * | 2012-03-06 | 2012-07-18 | 北京航空航天大学 | Open type surface plasmon polariton slit optical waveguide |
| CN102608701A (en) * | 2012-03-06 | 2012-07-25 | 北京航空航天大学 | Medium slit optical waveguide |
| CN103018832A (en) * | 2012-12-31 | 2013-04-03 | 江苏大学 | Polarization beam splitter |
| CN104049288A (en) * | 2014-07-11 | 2014-09-17 | 重庆大学 | Continuous amplitude regulation and control ultra oscillation focusing lens based on single layer metal slit structure array |
| CN206146527U (en) * | 2016-04-15 | 2017-05-03 | 中国科学院上海技术物理研究所 | Use optics slit of sapphire as submicron thickness of basement |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106644069A (en) | 2017-05-10 |
| CN105758522A (en) | 2016-07-13 |
| CN206146527U (en) | 2017-05-03 |
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