CN102732859A - Gas transmission apparatus and substrate processing device therewith - Google Patents
Gas transmission apparatus and substrate processing device therewith Download PDFInfo
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- CN102732859A CN102732859A CN2011100886324A CN201110088632A CN102732859A CN 102732859 A CN102732859 A CN 102732859A CN 2011100886324 A CN2011100886324 A CN 2011100886324A CN 201110088632 A CN201110088632 A CN 201110088632A CN 102732859 A CN102732859 A CN 102732859A
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- gas
- pore
- delivery mechanism
- charge delivery
- pipeline
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45576—Coaxial inlets for each gas
Abstract
The invention proposes a gas transmission apparatus, comprising a gas transmission pathway in which is provided a reactant gas pipeline group used for feeding various reactant gases and an isolation gas pipeline used for feeding isolation gases unreactive with the various reactant gases; and at least one gas nozzle disposed on the gas transmission pathway and each gas nozzle comprises multilayer pores which exhaust gas along the direction of cross-section of the gas transmission pathway, wherein, a top-layer pore of the multilayer pores is communicated with the isolation gas pipeline, and the pore of each layer that below the top-layer pore of the multilayer pores is communicated with each pipeline in the gas pipeline group in a matchable manner. The invention also provides a substrate processing device. The substrate processing device with the gas transmission apparatus according to the invention can prevent deposition on a head cover and a tray bottom, and effectively prevent particle contamination caused by the falling of thin films on the head cover and the tray bottom.
Description
Technical field
The present invention relates to microelectronics technology, particularly a kind of charge delivery mechanism and have the substrate processing equipment of this charge delivery mechanism.
Background technology
Metal organic chemical compound vapor deposition (MOCVD) is that the organometallics that utilizes that grows up the sixties in 20th century carries out a kind of compound semiconductor vapour phase epitaxy new technology that metal transports; And the reaction chamber subsystem is the core component of MOCVD equipment, and its plan has decisive influence for epitaxial layer quality and equipment productive rate.Traditional reaction chamber is made up of outer wall, pallet, heating unit, diffuser and monitoring device on hardware.
Shown in Figure 1A, be the synoptic diagram of the air inlet port of traditional spray header charge delivery mechanism.Shown in Figure 1B, be the synoptic diagram of traditional spray header charge delivery mechanism, this diffuser comprises disk 100; Disk 100 is arranged on the top of reaction chamber over against substrate 120 and pallet 131 and 132, hundreds of the apertures 110 that gather on the disk 100, wherein; The part of hundreds of apertures 110 feeds III family elemental gas; Another part feeds V group element gas, and III family element and V group element gas spray into reaction chamber from hundreds of apertures 110, vertically spray on the substrate 120; In the biochemical reaction of substrate 120 surperficial hybrid concurrencies, with the formation of deposits film.But because aperture 110 numbers are a lot, so hole diameter is inevitable very little, and this just causes owing to aperture is stopped up in the gas pre-reaction easily, makes gas can not all get into reaction chamber, thereby reduces gas effciency.In addition; Chemical reaction also can take place and be deposited as film in the top cover and pallet 131 bottoms of reaction chamber in gas; So not only waste gas, and the film of reaction chamber top cover comes off and can cause polluting the substrate 120 on the pallet 131, likewise; The film of pallet 131 bottoms comes off and also can cause polluting the substrate on the pallet 132, thereby influences the use characteristics of MOCVD.
Summary of the invention
The object of the invention is intended to solve at least one of above-mentioned technological deficiency.
For this reason, the objective of the invention is to propose a kind of top cover or tray bottom of preventing and deposit, and effectively prevent the charge delivery mechanism that top cover or tray bottom film come off.
Another object of the present invention is to propose a kind of substrate processing equipment with above-mentioned gas transmitting device.
To achieve these goals; The charge delivery mechanism of first aspect present invention embodiment; Comprise: the gas transmission path is provided with the reactant gases pipeline group and the separation gas pipeline that is used to feed separation gas that are used to feed each reactant gases in the said gas transmission path; With at least one gas spout; Said gas spout is arranged on the said gas transmission path; And each said gas spout comprises the cross-sectional direction deflated multilayer pore along said gas transmission path; Wherein, the top layer pore is communicated with said separation gas pipeline in the said multilayer pore, and each layer pore coupling ground below the top layer pore described in the said multilayer pore is communicated with each pipeline in the said reactant gases pipeline group.
Charge delivery mechanism according to the embodiment of the invention; Each gas spout comprises along the outside deflated multilayer of the cross-sectional direction of gas transmission path pore; Make gas can be more equably to around spray; The superiors' pore of multilayer pore is communicated with the separation gas pipeline, and other layer pore feeds each reactant gases, guarantees that chemical reaction takes place below separation gas each reactant gases; Thereby the reaction chamber top cover or the tray bottom that prevent to be in the separation gas top form deposit film at the effect lower surface of each reactant gases, and then prevent that deposit film from coming off and cause particle contamination.In addition, this charge delivery mechanism is simple in structure, is easy to realize.
In addition, can also have following additional technical characterictic according to charge delivery mechanism of the present invention:
In one embodiment of the invention, described charge delivery mechanism comprises a plurality of gas spouts, is arranged on the said gas transmission path axially spaced-apart of the said gas transmission path in said a plurality of gas spouts edge.
In one embodiment of the invention, said multilayer pore is parallel to each other.
In one embodiment of the invention, said reactant gases pipeline group comprise at least one be used to feed V group element gas V group element gas pipeline and at least one be used to feed the III family elemental gas pipeline of III family elemental gas.
In one embodiment of the invention, said reactant gases pipeline group comprises two V group element gas pipelines and an III family elemental gas pipeline.
In one embodiment of the invention, said multilayer pore is 4 layers of pore, and 3 layers of pore below the said top layer pore are communicated with a V group element gas pipeline, III family elemental gas pipeline and another V group element gas pipeline from top to bottom respectively.
In one embodiment of the invention, said separation gas is H
2Or N
2
The substrate processing equipment of second aspect present invention embodiment comprises: reaction chamber; A pallet, said pallet are positioned within the said reaction chamber; Charge delivery mechanism; Said charge delivery mechanism is the charge delivery mechanism of first aspect present invention embodiment; Wherein, the gas transmission path of said charge delivery mechanism passes the centre hole of said a plurality of pallets, and on said pallet, is provided with at least one said gas spout.
Substrate processing equipment according to the embodiment of the invention; Because the separation gas of charge delivery mechanism isolation reaction chamber top cover contacts with each reactant gases; Therefore prevent that each reactant gases from making the top cover of reaction chamber form deposit film at the top cover generation chemical reaction of reaction chamber; And then prevent that film from coming off and cause particle contamination, improve the use characteristics of substrate processing equipment.
The substrate processing equipment of third aspect present invention embodiment comprises: reaction chamber; A plurality of pallets, said a plurality of pallets are positioned within the said reaction chamber, and said a plurality of pallet is vertically uniformly-spaced arrangement; And charge delivery mechanism; Said charge delivery mechanism is the charge delivery mechanism of above-mentioned first aspect embodiment; Wherein, the gas transmission path of said charge delivery mechanism passes the centre hole of said a plurality of pallets, and on each said pallet, is provided with a said gas spout.
Substrate processing equipment according to the embodiment of the invention; Because the separation gas of charge delivery mechanism isolation reaction chamber top cover or tray bottom contact with each reactant gases; Therefore prevent that each reactant gases is at the top cover of reaction chamber or chemical reaction takes place in the tray bottom and make the top cover of reaction chamber or tray bottom form deposit film; And then prevent that film from coming off and cause particle contamination, improve the use characteristics of substrate processing equipment.
In one embodiment of the invention, said a plurality of pallets are vertical direction along the axis of said reaction chamber and uniformly-spaced arrange.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
The present invention above-mentioned and/or additional aspect and advantage from obviously with easily understanding becoming the description of embodiment, wherein below in conjunction with accompanying drawing:
Figure 1A is the synoptic diagram of the air inlet port of traditional spray header charge delivery mechanism;
Figure 1B is the synoptic diagram of traditional spray header charge delivery mechanism;
Fig. 2 is the synoptic diagram of the charge delivery mechanism of the embodiment of the invention;
Fig. 3 A is the synoptic diagram of the substrate processing equipment with a pallet of the embodiment of the invention; And
Fig. 3 B is the synoptic diagram of the substrate processing equipment with a plurality of pallets of the embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention; It will be appreciated that; Term " vertically ", " laterally ", " on ", the orientation of indications such as D score, " preceding ", " back ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward " or position relation be for based on orientation shown in the drawings or position relation; Only be to describe with simplifying for the ease of describing the present invention; Rather than the device or the element of indication or hint indication must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " only are used to describe purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, need to prove, unless otherwise prescribed and limit; Term " installation ", " connection ", " connection " should be done broad understanding, for example, can be mechanical connection or electrical connection; Also can be the connection of two element internals, can be direct connection, also can pass through the intermediary indirect communication; For those of ordinary skill in the art, can understand the concrete implication of above-mentioned term as the case may be.
Below in conjunction with accompanying drawing 2 charge delivery mechanism according to the embodiment of the invention is described at first.
As shown in Figure 2, be the synoptic diagram of the charge delivery mechanism of the embodiment of the invention.Charge delivery mechanism 200 according to the embodiment of the invention comprises gas transmission path 210 and gas spout 220.Though only show a gas spout 220 in the figure; But in other embodiments of the invention, this gas spout 220 can be a plurality of, and a gas spout 220 promptly all is set on each pallet; Guarantee that reactant gases can not touch the bottom of pallet; Form deposit film in the tray bottom, improve each reactant gases utilization ratio more, prevent the tray bottom deposit film.
Wherein, be provided with the reactant gases pipeline group that is used to feed each reactant gases and the separation gas pipeline that is used to feed not the separation gas that reacts to each other with said each reactant gases in the gas transmission path 210.For example, in one embodiment of the invention, separation gas can be H
2Or N
2Gas.Certainly, this inventive embodiment is not limited to this, for example separation gas can also for other density less than each reactant gases and other gas of not reacting with each reactant gases.
Wherein, One or more gas spouts 220 are spaced apart and arranged on the gas transmission path 210 along axial (above-below direction of Fig. 2) of gas transmission path 210; And each gas spout 220 comprises along the outside deflated multilayer of the cross-sectional direction of gas transmission path 210 pore; Wherein, top layer pore 221 is communicated with the separation gas pipeline in the multilayer pore, and each layer pore below the top layer pore is communicated with said reactant gases pipeline group respectively in the multilayer pore.In an embodiment of the present invention, the outside exhaust of described cross-sectional direction along gas transmission path 210, this cross-sectional direction can be perpendicular to the cross-sectional direction of gas transmission path 210, can certainly have certain angle.Second layer pore 222 as shown in Figure 2, the 3rd layer of pore 223 and the 4th layer of pore 224 are communicated with the reactant gases pipeline group respectively.Can know that the gas pipeline group comprises that at least two pipelines are respectively applied for two kinds of different reactive gas of transmission, reacts after gas spout sprays to guarantee different reactive gas.Preferably; For example the multilayer pore is parallel to each other, and each reactant gases can be merged more fully, improves each reactant gases utilization ratio; And prevent that each reactant gases is directly injected to the separation gas top, thereby prevent that each reactant gases is in reaction chamber top cover and tray bottom reaction.Certainly, embodiments of the invention are not limited to this, and for example the multilayer pore can be not parallel, can not be ejected into the separation gas top as long as guarantee each reactant gases.
In one embodiment of the invention; The reactant gases pipeline group comprise at least one be used to feed V group element gas V group element gas pipeline and at least one be used to feed the III family elemental gas pipeline of III family elemental gas; The reactant gases that assurance is ejected in the reaction chamber is at least two kinds; So that can react, make substrate surface form deposit film on the surface of substrate.Preferably, the reactant gases pipeline group comprises two V group element gas pipelines and an III family elemental gas pipeline, improves the utilization ratio of reactant gases.But embodiments of the invention are not limited to this, and for example the reactant gases pipeline group comprises a V group element gas pipeline and two III family elemental gas pipelines.
In conjunction with Fig. 2; For example; The multilayer pore is 4 layers of pore; In one embodiment of the invention, the first layer pore 221 is communicated with the separation gas pipeline, and second layer pore 222, the 3rd layer of pore 223 and the 4th layer of pore 224 respectively with the reactant gases pipeline group in V group element gas pipeline and III family elemental gas pipeline be communicated with.Preferably; Second layer pore 222 is communicated with a V group element gas pipeline; The 3rd layer of pore 223 is communicated with III family elemental gas pipeline, and the 4th layer of pore 224 is communicated with another V group element gas pipeline, and separation gas is ejected into the reaction chamber top from the first layer pore 221; And III family elemental gas is ejected in the reaction chamber by the 3rd layer of pore 223; At two V group element inter gas, thereby guarantee that III family's elemental gas and V group element gas better merge, and then improve gas effciency more.Make each reactant gases reach better reaction effect.But; Those skilled in the art can know; Second layer pore 222 to the 4th layer of pore 224 and two V group element gas pipelines and an III family elemental gas pipeline have multiple mode of connection; For example, second layer pore 222 can be communicated with III family elemental gas pipeline with the 4th layer of pore 223, and the 3rd layer of pore 223 can be communicated with the V group element gas pipeline.In addition; In other example of the present invention, the multilayer pore of gas spout 220 also can be multilayer, for example can be 5 layers, 6 layers etc.; And more can feed III family elemental gas and V group element gas according to predefined procedure in the multilayer pore, these also should be classified as within protection scope of the present invention.
According to the charge delivery mechanism 200 of the embodiment of the invention, each gas spout 220 comprises the outside deflated multilayer of the cross-sectional direction pore along said gas transmission path 210, only shows the sectional view of gas spout 220 like Fig. 2.The superiors' pore 221 of multilayer pore is communicated with the separation gas pipeline, and other layer pore feeds each reactant gases, guarantees that chemical reaction takes place below separation gas each reactant gases; Thereby prevent that the reaction chamber top cover or the tray bottom that are in the separation gas top from forming deposit film at the effect lower surface of each reactant gases; The embodiment of the invention can also prevent that film from coming off to wafer processing procedure generation particle contamination, reaches use characteristics, in addition; This charge delivery mechanism is simple in structure, is easy to realize.
Below in conjunction with accompanying drawing 3A-3B the substrate processing equipment according to the embodiment of the invention, for example CVD equipment are described.
Shown in Fig. 3 A,, shown in Fig. 3 B, be the synoptic diagram of the substrate processing equipment with a plurality of pallets of the embodiment of the invention for the synoptic diagram of the substrate processing equipment with a pallet of the embodiment of the invention.Below description is an example with the substrate processing equipment with a plurality of pallets of the embodiment of the invention all.Like Fig. 3 B, comprise the described charge delivery mechanism 200 of reaction chamber 340, a plurality of pallet 310 and the foregoing description according to the substrate processing equipment 300 of the embodiment of the invention, and ruhmkorff coil 330.
Wherein, a plurality of pallets 310 are positioned within the reaction chamber 340, and a plurality of pallet 310 is vertically uniformly-spaced arrangement.The gas transmission path 210 of charge delivery mechanism 200 passes the centre hole 312 of a plurality of pallets 310, and on pallet 310, is provided with at least one gas spout 220.
In one embodiment of the invention; Each gas spout 220 comprises the outside deflated multilayer of the cross-sectional direction pore along said gas transmission path 210; Shown in Fig. 3 B, only show the sectional view of substrate processing equipment, i.e. arrow direction and to the right left.The multilayer pore comprises the first layer pore 221, second layer pore 222, the 3rd layer of pore 223 and the 4th layer of pore 224, and is followed successively by the first layer pore 221 particularly from top to bottom to the 4th layer of pore 224.Wherein, the first layer pore 221 is communicated with separation gas pipeline (not shown), and second layer pore 222, the 3rd layer of pore 223 and the 4th layer of pore 224 are communicated with the reactant gases pipeline group respectively.Can know by the foregoing description,, for example feed H when the separation gas pipeline feeds separation gas
2Or N
2Gas, the V group element gas pipeline feeds V group element gas, and when III family elemental gas pipeline feeds III family elemental gas, the first layer pore 221 will spray H in reaction chamber 340
2Or N
2Gas, second layer pore 222 and the 4th layer of pore 224 spray V group element gas in reaction chamber 340, and the 3rd layer of pore 223 sprays III family elemental gas in reaction chamber 340, and then H
2Or N
2Gas barrier V group element gas and III family elemental gas form film on the top cover 341 of reaction chamber 340, improve gas effciency, avoid film to come off simultaneously reaction chamber 340 is caused particle contamination, and then improve the use characteristics of substrate processing equipment.
In addition; In conjunction with Fig. 3 B, owing in the reaction chamber 340 a plurality of pallets that are parallel to each other 310 can be set, preferably; The CVD equipment of the embodiment of the invention all is provided with gas spout 220 above each pallet 310; Therefore, top cover 341 reactions of not only isolating III family elemental gas, V group element gas and reaction chamber 340 form film, and the lower surface 311 that can also isolate each pallet 310 reacts with III family elemental gas, V group element gas and makes lower surface 311 form film; Further improve the utilization ratio of gas; In addition, avoid guaranteeing that reaction chamber 340 reaches processing requirement because the film of top cover 341 and lower surface 311 comes off to causing particle contamination in the reaction chamber 340.In addition, the substrate processing equipment of the embodiment of the invention is simple in structure, is easy to realize.
In one embodiment of the invention, a plurality of pallets 310 are vertical direction along the axis of reaction chamber 340 and uniformly-spaced arrange.Can be that in embodiment of the invention Fig. 3 B, when vertically located on the axis of reaction chamber 340 edge, a plurality of pallets 310 were the vertical direction setting along the axis of reaction chamber 340 for what it will be apparent to those skilled in the art that.Yet when the axis of reaction chamber 340 during along transverse orientation, a plurality of pallets 310 are provided with along the axis of reaction chamber 340 in horizontal direction in other embodiments of the invention.Perhaps, also can adopt other modes of emplacement in other embodiments of the invention.
Like Fig. 3 A; In an example of the present invention; Substrate processing equipment 300 for example comprises a pallet 310, thereby can avoid guaranteeing that reaction chamber 340 reaches the processing requirement of substrate processing equipment because the film of top cover 341 comes off to causing particle contamination in the reaction chamber 340.
In the description of this specification sheets, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means the concrete characteristic, structure, material or the characteristics that combine this embodiment or example to describe and is contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete characteristic, structure, material or the characteristics of description can combine with suitable manner in any one or more embodiment or example.
Although illustrated and described embodiments of the invention; For those of ordinary skill in the art; Be appreciated that under the situation that does not break away from principle of the present invention and spirit and can carry out multiple variation, modification, replacement and modification that scope of the present invention is accompanying claims and be equal to and limit to these embodiment.
Claims (10)
1. a charge delivery mechanism is characterized in that, comprising:
The gas transmission path is provided with the reactant gases pipeline group and the separation gas pipeline that is used to feed separation gas that are used to feed each reactant gases in the said gas transmission path; With
At least one gas spout; Said gas spout is arranged on the said gas transmission path; And each said gas spout comprises the cross-sectional direction deflated multilayer pore along said gas transmission path; Wherein, the top layer pore in the said multilayer pore is communicated with said separation gas pipeline, and each layer pore coupling ground below the top layer pore described in the said multilayer pore is communicated with each pipeline in the said reactant gases pipeline group.
2. charge delivery mechanism as claimed in claim 1 is characterized in that, comprises a plurality of gas spouts, is arranged on the said gas transmission path axially spaced-apart of the said gas transmission path in said a plurality of gas spouts edge.
3. charge delivery mechanism as claimed in claim 1 is characterized in that, said multilayer pore is parallel to each other.
4. charge delivery mechanism as claimed in claim 1; It is characterized in that, said reactant gases pipeline group comprise at least one be used to feed V group element gas V group element gas pipeline and at least one be used to feed the III family elemental gas pipeline of III family elemental gas.
5. charge delivery mechanism as claimed in claim 4 is characterized in that, said reactant gases pipeline group comprises the said III of two said V group element gas pipelines and family elemental gas pipeline.
6. charge delivery mechanism as claimed in claim 5; It is characterized in that; Said multilayer pore is 4 layers of pore, and 3 layers of pore below the said top layer pore are communicated with a said V group element gas pipeline, said III family's elemental gas pipeline and another said V group element gas pipeline from top to bottom respectively.
7. charge delivery mechanism as claimed in claim 1 is characterized in that, said separation gas is H
2Or N
2
8. a substrate processing equipment is characterized in that, comprising:
Reaction chamber;
A pallet, said pallet are positioned within the said reaction chamber;
Charge delivery mechanism; Each described charge delivery mechanism of said charge delivery mechanism such as claim 1-7; Wherein, the gas transmission path of said charge delivery mechanism passes the centre hole of said a plurality of pallets, and on said pallet, is provided with at least one said gas spout.
9. a substrate processing equipment is characterized in that, comprising:
Reaction chamber;
A plurality of pallets, said a plurality of pallets are positioned within the said reaction chamber, and said a plurality of pallet is uniformly-spaced arranged along the axis of said reaction chamber; With
Charge delivery mechanism; Each described charge delivery mechanism of said charge delivery mechanism such as claim 1-7; Wherein, the gas transmission path of said charge delivery mechanism passes the centre hole of said a plurality of pallets, and on each said pallet, is provided with at least one said gas spout.
10. substrate processing equipment according to claim 9 is characterized in that, the axis of the said reaction chamber in said a plurality of pallets edge is vertical direction and uniformly-spaced arranges.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100886324A CN102732859A (en) | 2011-04-08 | 2011-04-08 | Gas transmission apparatus and substrate processing device therewith |
| PCT/CN2011/080290 WO2012136052A1 (en) | 2011-04-08 | 2011-09-28 | Gas transmission device and substrate treatment apparatus having same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100886324A CN102732859A (en) | 2011-04-08 | 2011-04-08 | Gas transmission apparatus and substrate processing device therewith |
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| CN102732859A true CN102732859A (en) | 2012-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100886324A Pending CN102732859A (en) | 2011-04-08 | 2011-04-08 | Gas transmission apparatus and substrate processing device therewith |
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| CN (1) | CN102732859A (en) |
| WO (1) | WO2012136052A1 (en) |
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|---|---|---|---|---|
| WO2009049020A2 (en) | 2007-10-11 | 2009-04-16 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1796597A (en) * | 2004-12-23 | 2006-07-05 | 中国科学院半导体研究所 | Structure of reaction chamber in multiple laminar flows in chemical vapor deposition equipment for metal organic matter |
| JP2007317770A (en) * | 2006-05-24 | 2007-12-06 | Sharp Corp | Vapor phase growth device |
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|---|---|---|---|---|
| JP4435111B2 (en) * | 2001-01-11 | 2010-03-17 | 株式会社日立国際電気 | ALD apparatus and method for manufacturing semiconductor device |
| KR100513920B1 (en) * | 2003-10-31 | 2005-09-08 | 주식회사 시스넥스 | Chemical vapor deposition unit |
| US8716147B2 (en) * | 2007-11-19 | 2014-05-06 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
| CN101914761B (en) * | 2010-08-16 | 2012-04-25 | 江苏中晟半导体设备有限公司 | Device for controlling delivery and uniform distribution of reaction gases in MOCVD reaction chamber |
-
2011
- 2011-04-08 CN CN2011100886324A patent/CN102732859A/en active Pending
- 2011-09-28 WO PCT/CN2011/080290 patent/WO2012136052A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1796597A (en) * | 2004-12-23 | 2006-07-05 | 中国科学院半导体研究所 | Structure of reaction chamber in multiple laminar flows in chemical vapor deposition equipment for metal organic matter |
| JP2007317770A (en) * | 2006-05-24 | 2007-12-06 | Sharp Corp | Vapor phase growth device |
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Application publication date: 20121017 |