CN101665923A - Film deposition apparatus, substrate processing apparatus and film deposition method - Google Patents

Film deposition apparatus, substrate processing apparatus and film deposition method Download PDF

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Publication number
CN101665923A
CN101665923A CN200910172121A CN200910172121A CN101665923A CN 101665923 A CN101665923 A CN 101665923A CN 200910172121 A CN200910172121 A CN 200910172121A CN 200910172121 A CN200910172121 A CN 200910172121A CN 101665923 A CN101665923 A CN 101665923A
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substrate
universal stage
gas
gas flow
film deposition
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Chinese (zh)
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本间学
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Abstract

A film deposition apparatus includes a turntable rotatably provided in a chamber. First and second reaction gas supplying portions supply first and second reaction gases to one surface of the turntable, respectively. A separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which the first reaction gas is supplied and a second process area to which the second reaction gas is supplied. A ceiling surface is provided in the separation area to form a thin space between the turntable to allow the separation gas flowing from the separation area to a process area side. An elevation mechanism to move the substrate upward and downward is provided in a substrate placement part. The elevation mechanism is movable in upward and downwarddirections relative to the turntable and movable in a radial direction of the turntable.

Description

Film deposition system, substrate board treatment and film
The application advocates Japanese application for a patent for invention 2008-227032 number and Japanese application for a patent for invention 2009-181807 number right of priority of application on August 4th, 2009 of application on September 4th, 2008, quotes its full content at this.
Technical field
The present invention relates to a kind ofly supply to the circulation, deposition reaction resultant of substrate surface successively and film forming film deposition system, substrate board treatment, film by at least 2 kinds of reactant gasess that will react to each other repeatedly, and the storage medium of the program of this method of storage implementation.
Background technology
In the film deposition techniques of semiconductor fabrication process, known have so-called ald (ALD, Atomic Layer Deposition) or molecular layer to deposit (MLD, Molecular Layer Deposition).In such film deposition techniques, under vacuum condition, the 1st reactant gases is adsorbed on the surface of semiconductor crystal wafer (hereinafter referred to as wafer), next, absorption the 2nd reactant gases on this crystal column surface, by the reaction of the 1st and the 2nd reactant gases on this crystal column surface, form one deck above atomic shell or molecular layer.In addition, carry out repeatedly such gas repeatedly and adsorb deposited film on wafer alternately.This technology can controlled on this aspect of thickness accurately by the mutual number of times of supplying with of gas, and deposited film has advantage on this aspect of homogeneity that can have excellence on the wafer.Therefore, this deposition method is expected to become the film deposition techniques of ground processing semiconductor device of can more becoming more meticulous.
Such film can be applicable to preferably the employed dielectric film of for example gate insulator is carried out film forming situation.Gate insulator is with silicon oxide film (SiO 2Film) under the film forming situation, the 1st reactant gases (unstripped gas) for example can use dual-tert-butyl aminosilane (below, be called BTBAS) gas etc., and the 2nd reactant gases (oxidizing gas) can use ozone gas etc.
In order to implement this film, can consider to use the one chip film deposition system that has vacuum vessel and be positioned at the shower head of this vacuum vessel center upper portion.In this film deposition system,, discharge unreacted reactant gases and the secondary resultant of reaction from the processing vessel bottom from center upper portion supply response gas.When using this vacuum vessel, need the long period to carry out gas displacement, and cycle index also can reach hundreds of times by sweeping gas, will the long treatment time of cost.Therefore, people need a kind of large-duty film deposition system and film realized.
Based on such background, proposed to have the film deposition system of vacuum vessel and universal stage, along the sense of rotation maintenance multi-piece substrate of universal stage.
The patent documentation of enumerating below 1 discloses and a kind of treatment chamber has been formed flat deposition apparatus cylindraceous.This treatment chamber is split into two semicircle zones.Each zone has the venting port that is provided with around this zone on each regional top.In addition, treatment chamber has the gas inlet that radially imports divided gas flow along treatment chamber between two zones.According to this structure, different reactant gasess is fed into zone separately, and by different venting ports from the upside exhaust, in addition, rotate the wafer that makes by the universal stage mounting by universal stage and pass two zones alternately.In addition, the separated region that is supplied to divided gas flow has the top that highly is lower than the zone that is supplied to unstripped gas.
Patent documentation 2 discloses a kind of treatment chamber, has: wafer supporting member (universal stage), and its supporting multi-disc wafer, and can horizontally rotate; The the 1st and the 2nd gas jetting nozzle, it is relative with the wafer supporting member, equal angles (central angle) arranged spaced on wafer supporting member sense of rotation; The sweeping gas nozzle, it is configured between the 1st and the 2nd gas jetting nozzle.The gas jetting nozzle is along the radially extension of wafer supporting member.The upper surface of wafer exceeds the thickness of wafer than wafer supporting member surface, being spaced apart more than about 0.1mm of the wafer on gas jetting nozzle and the wafer supporting member.Vacuum pumping hardware is connected with position between wafer supporting member outer end and treatment chamber inwall.According to the processing vessel of this structure, the sweeping gas nozzle discharges sweeping gas and forms gas curtain, prevents that the 1st reactant gases and the 2nd reactant gases from mixing.
Patent documentation 3 discloses an example is separated out a plurality of treatment zones by a plurality of partition walls treatment chamber.The downside of partition wall with partition wall at interval very closely spaced mode be provided with the rotating basis of the circle of mounting multi-disc wafer.
Patent documentation 4 discloses a routine treatment chamber, has: four segmental gases are supplied with plate, and it has the drift angle of 90 degree, according to the angle intervals configuration that between respective side edge is 90 degree; Venting port, it is configured in two adjacent gases and supplies with between plate, is used for exhaust in the processing vessel; Pedestal, its supporting multi-disc wafer, and relative with gas supply plate.Four gases are supplied with plate and are discharged hydrogen arsenide (AsH respectively 3) gas, hydrogen (H 2) gas, trimethyl-gallium (TMG) gas and H 2Gas.
Patent documentation 5 is disclosed to be a routine treatment chamber, has: circular plate, and it is separated wall and is divided into four zones, and four zones are respectively arranged with pedestal; Four jet pipes, across is connected to each other; Two venting ports, it disposes with four pedestals are approaching respectively.In this treatment chamber, four wafer are equipped on respectively on four pedestals, four jet pipes discharge unstripped gas, sweeping gas, unstripped gas, another kind of sweeping gas respectively, and making four jet pipes simultaneously is the rotation center rotation with criss-cross center above the plate of circle.The limit makes jet pipe unit horizontal rotation so that jet pipe is positioned at four mounting zones successively, the limit around the universal stage with the vacuum mode exhaust.
In addition, patent documentation 6 (patent documentation 7,8) discloses a kind of film deposition system, and this device makes target (wafer) adsorb multiple gases alternately, is applicable to atomic shell CVD.In this device,, and make the pedestal rotation that keeps wafer from last direction pedestal supply source gas and sweeping gas.Write in the 0023rd, 0024,0025 section of the document, partition wall radially extends from the chamber center, is provided with the gas squit hole that is used for supply source gas or sweeping gas in the bottom of partition wall.In addition, as sweeping gas,, form gas curtain from gas squit hole ejection rare gas element.About exhaust, the 0058th section record to some extent in the text, source gas is from gas exhaust duct 30a exhaust, and sweeping gas is from gas exhaust duct 30b exhaust.
Patent documentation 9 discloses a kind of lifter pin that is used for substrate such as on the pedestal of film deposition system formed substrate-placing zone mounting wafer.This lifter pin has the mechanism that drives up and down, drives substrate-placings such as wafers in the substrate-placing zone up and down by it.
Patent documentation 1: U.S. Patent bulletin 7,153, No. 542: Fig. 6 (a) and (b)
Patent documentation 2: TOHKEMY 2001-254181 communique: Fig. 1 and Fig. 2
Patent documentation 3: Japan's special permission No. 3144664 communique: Fig. 1, Fig. 2, claim 1
Patent documentation 4: Japanese kokai publication hei 4-287912 communique
Patent documentation 5: U.S. Patent bulletin 6,634, No. 314
Patent documentation 6: TOHKEMY 2007-247066 communique: 0023～0025,0058 section, Figure 12 and Figure 18
Patent documentation 7: U.S. Patent Publication communique 2007-218701 number
Patent documentation 8: U.S. Patent Publication communique 2007-218702 number
Patent documentation 9: U.S. Patent bulletin 6,646, No. 235
But, in the device of patent documentation 1 record, the downward air feed of reactant gases and divided gas flow, from the venting port that the is located at chamber top exhaust that makes progress, therefore, the air-flow that the particulate in the chamber is made progress blows afloat, and drops on the wafer polluting wafer.
In addition, in the technology of patent documentation 2 record, gas curtain can not prevent the mixing of these reactant gasess fully, and gas also can be driven towards sense of rotation by the rotation of wafer supporting member, flows and mixes with other reactant gases and cause one of reactant gases to pass gas curtain.In addition, can not cause bigger centrifugal force near the center of the wafer supporting member that is rotating to gas, therefore, know from experience the central part that passes the wafer supporting member, contact with the 2nd (the 1st) reactant gases from the 1st (the 2nd) reaction gas of the 1st (the 2nd) gas jetting nozzle ejection.In case reactant gases mixes, then can not carry out the thin film deposition of MLD (or ALD) pattern by expection in chamber.
In the device that patent documentation 3 is put down in writing, in treatment chamber, the processing gas that imports one of treatment zone tends to pass the gap of partition wall downside, to adjacent treatment zone diffusion, mixes with other processing gases that import this adjacent treatment zone.In addition, handle gas and tend to mix, make wafer be exposed to two kinds simultaneously and handle among the gas in exhaust chamber.Therefore, adopt this treatment chamber, can't implement the thin film deposition under MLD (ALD) pattern suitably.
In the patent documentation 4 disclosed contents, do not provide the two kinds of unstripped gas (AsH that prevent of any reality 3, TMG) the blended method.Because therefore the method that prevents useless, tends to cause two kinds of reactant gasess to pass near the pedestal center or H 2The supply plate of gas and mixing.In addition, venting port is configured in adjacent two gases and supplies with between the plates, therefore, with the gas exhaust that makes progress, can blow afloat particulate from base-plates surface, causes wafer contamination.
In the patent documentation 5 disclosed treatment chamber, after a jet pipe is through one of four zoning zones, can't purge this zone at short notice.In addition, the reactant gases in one of four zoning zones may flow into adjacent zoning zone easily.Therefore, be difficult to carry out thin film deposition under MLD (ALD) pattern.
According to patent documentation 6 disclosed technology, source gas can flow into the sweeping gas compartment from the gas partitions chamber, source that is positioned at sweeping gas compartment both sides, and source gas mixes in the sweeping gas compartment mutually with sweeping gas.Consequently, may be in the sweeping gas compartment formation reaction resultant, on wafer, fall particulate.
In the patent documentation 9 disclosed technology, the substrate-placing zone is bigger than substrates such as wafers usually, therefore, when making the pedestal rotation, substrate such as wafer is moved in the substrate-placing zone, contact, cause breakages such as wafer with the wall in substrate-placing zone.
Summary of the invention
Generality purpose of the present invention is to provide useful film deposition system, substrate board treatment, the film of the new improvement that addresses the above problem, and the storage media that stores the program of this method of enforcement.
Specific purposes of the present invention are by preventing breaking or broken lacking of film forming substrate, when preventing to produce substandard products, also prevent the generation of particulate etc., can carry out film forming in the environment of cleaning.
To achieve these goals, according to a technical scheme of the present invention, a kind of film deposition system is provided, in this film deposition system, in container, implement to supply with to substrate successively the circulation of at least two kinds of reactant gasess that react to each other, the layer of formation reaction resultant on this substrate, with deposited film, this film deposition system has: universal stage, and it rotatably is located in the container; The substrate-placing zone, the face that it is located at universal stage is used for the mounting substrate; The 1st reaction gas supplying portion, its face to this universal stage is supplied with the 1st reactant gases; The 2nd reaction gas supplying portion, it away from the 1st reaction gas supplying portion, and supplies with the 2nd reactant gases to a face of this universal stage on the sense of rotation of universal stage; Separated region, it at the 1st treatment zone that is supplied to the 1st reactant gases be supplied between the 2nd treatment zone of the 2nd reactant gases, separates the 1st treatment zone and the 2nd treatment zone on sense of rotation; Middle section, for the 1st treatment zone and the 2nd treatment zone are kept apart, this middle section is positioned at the substantial middle of container, and has the squit hole that sprays the 1st divided gas flow along a face of universal stage; Venting port, it is used for reactant gases with discharging to the divided gas flow of separated region both sides diffusion and from the divided gas flow of middle section ejection; The divided gas flow supply unit, it is located at separated region, is used to supply with divided gas flow; End face, it is located at separated region, is positioned at the sense of rotation both sides of divided gas flow supply unit, forms narrow space between this end face and described universal stage, is used for divided gas flow and flows to the treatment zone side from this separated region; Hoisting appliance, it is used for the substrate that is arranged in the substrate-placing portion is carried out lifting, and hoisting appliance can not only can also upwards move in the footpath of universal stage on above-below direction with respect to universal stage.
In addition, according to another technical scheme of the present invention, a kind of film deposition system is provided, in this film deposition system, in container, implement to supply with to substrate successively the circulation of at least two kinds of reactant gasess that react to each other, the layer of formation reaction resultant on this substrate, with deposited film, this film deposition system has: universal stage, and it is located in the container; A plurality of substrate-placing portion, it is located on the universal stage, is used for mounting substrate on the same circumference of universal stage; The 1st reaction gas supplying portion, the side that it is located at the formation substrate-placing portion in the container is used to supply with the 1st reactant gases; The 2nd reaction gas supplying portion, it is located at a side that is formed with substrate-placing portion in the container, and is positioned at the position away from the 1st reaction gas supplying portion, is used to supply with the 2nd reactant gases; The 1st divided gas flow supply unit, it is arranged at by the 1st reaction gas supplying portion and supplies with the 1st treatment zone of the 1st reactant gases and supplied with by the 2nd reaction gas supplying portion between the 2nd treatment zone of the 2nd reactant gases, and supply with the 1st divided gas flow, be used for the 1st treatment zone and the 2nd treatment zone are kept apart; Delivery port, it is opened and closed by the gate valve that is located at container side wall, with from the delivered inside substrate of external container to container; The substrate keeping arm, it is at the delivery port conveying substrate, and the substrate keeping arm is made of two bar-shaped maintaining parts, and a maintaining part is provided with at least one the substrate maintaining part that is used to keep substrate, on another maintaining part, be used to keep at least two substrate maintaining parts of substrate to be located at different positions.
In addition, according to another technical scheme of the present invention, provide a kind of substrate board treatment, it has: the vacuum conveying chamber, and its internal configuration has the substrate delivery section; Above-mentioned film deposition system, it links to each other airtightly with the vacuum conveying chamber; Preparatory vacuum chamber, it links to each other airtightly with the vacuum conveying chamber, can switch atmosphere between vacuum atmosphere and air atmosphere.
In addition, according to another technical scheme of the present invention, a kind of film is provided, by repeatedly carrying out supplying with at least two kinds of reactant gasess that react to each other to substrate surface successively, the deposition reaction resultant, form film, in this film, from the outside of vacuum vessel through the delivery port conveying substrate, the substrate-placing portion place that is being provided with for mounting substrate on the universal stage of vacuum vessel inside, substrate-placing in from the position farthest, center of universal stage, is made the universal stage rotation, from the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion that is separated from each other setting in vacuum vessel, the face that is formed with substrate-placing portion to universal stage, supply with the 1st reactant gases and the 2nd reactant gases, and supply with divided gas flow, carry out film forming from the divided gas flow supply unit that is arranged between the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion.
In addition, according to other technical scheme of the present invention, a kind of film is provided, by repeatedly carrying out supplying with to substrate surface successively the circulation of at least two kinds of reactant gasess that react to each other, the deposition reaction resultant forms film, in this film, for the substrate that transports through delivery port from the vacuum vessel outside is carried out mounting, on universal stage, be formed with the substrate-placing portion of concavity, mounting substrate on hoisting appliance set in this substrate-placing portion; With substrate-placing after on the hoisting appliance, hoisting appliance is descended, substrate is moved to surperficial low position than universal stage; After substrate is moved,, substrate is contacted or approaching with the wall of substrate-placing portion by making hoisting appliance along universal stage side shifting outside universal stage radially; Make hoisting appliance after the universal stage radial outside moves, hoisting appliance is being descended, the bottom of substrate-placing in substrate-placing portion; With substrate-placing behind the bottom of substrate-placing portion, make universal stage rotation; From the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion that in vacuum vessel, is separated from each other setting, supply with the 1st reactant gases and the 2nd reactant gases to the face that is formed with substrate-placing portion of universal stage, and, carry out film forming from being arranged on the divided gas flow supply unit supply divided gas flow between the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion.
According to another technical scheme of the present invention, a kind of film is provided, from the vacuum vessel outside after delivery port is delivered to described vacuum vessel with substrate, by repeatedly carrying out supplying with at least two kinds of reactant gasess that react to each other to substrate surface successively, the deposition reaction resultant, form film, in this film, use has two substrate keeping arms that are used to keep the bar-shaped maintaining part of substrate, substrate is delivered to for the mounting substrate directly over the substrate-placing portion that forms concavity on the universal stage, this substrate-placing portion is on a maintaining part, be provided with the substrate maintaining part that at least one is used to keep substrate, on another maintaining part, be provided with at least two substrate maintaining parts that are used to keep substrate; Behind conveying substrate, descend by making the substrate keeping arm, substrate is moved to surperficial low position than universal stage; After substrate is descended, by make the substrate keeping arm along universal stage radially to the outer side shifting of universal stage, substrate is contacted or approaching with the wall of substrate-placing portion; After the wall that makes substrate with substrate-placing portion contacts or be approaching, make the substrate keeping arm drop to the bottom position contacting of substrate and substrate-placing portion; After the substrate keeping arm is descended, make the universal stage rotation; From the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion that in vacuum vessel, is separated from each other setting, the face that is formed with substrate-placing portion to universal stage, supply with the 1st reactant gases and the 2nd reactant gases, and supply with divided gas flow from the divided gas flow supply unit that is arranged between the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion.
According to the present invention, supplying with the multiple reactant gases that reacts to each other successively to substrate surface, the layer that deposition is formed by resultant of reaction comes under the film forming situation with this, can prevent breaking or broken lacking by film forming substrate.Thus, not only can prevent substandard products, also can prevent particulate etc., thereby can under the atmosphere of cleaning, carry out film forming.Therefore, can reduce with doing one's utmost and sneak into pollution, can not sneak into impurity ground and carry out high-quality forming thin film.
Description of drawings
Fig. 1 is the longitudinal section of the film deposition system of one embodiment of the invention.
Fig. 2 is the stereographic map that is expressed as the inner schematic configuration of film device.
Fig. 3 is the cross-sectional vertical view of film deposition system.
Fig. 4 A and 4B are expressed as the treatment zone of film device and the longitudinal section of separated region.
Fig. 5 is expressed as the partial longitudinal section of film device.
Fig. 6 is the partial cross-sectional perspective view of film deposition system.
Fig. 7 is the figure of expression divided gas flow or flow of purge gas flowing mode.
Fig. 8 is the partial cross-sectional perspective view of film deposition system.
Fig. 9 is the general profile chart of the universal stage of film deposition system.
Figure 10 A～10D is the general profile chart that is illustrated in the order of mounting wafer on the universal stage of film deposition system.
Figure 11 uploads vertical view under the state that is equipped with wafer at the universal stage of film deposition system.
Figure 12 is that the 1st reactant gases and the 2nd reactant gases are kept apart by divided gas flow and the figure of the situation that is deflated.
Figure 13 A is the vertical view that is used to illustrate in the size example of the employed convex shaped part of separated region.
Figure 13 B is the sectional view that is used to illustrate in the size example of the employed convex shaped part of separated region.
Figure 14 is the longitudinal section of other example of expression separated region.
Figure 15 A～15C is the longitudinal section that is illustrated in other example of the employed convex shaped part of separated region.
Figure 16 A～16G is the upward view of other example of the gas squit hole of expression reaction gas supplying portion part.
Figure 17 is the vertical view of the film deposition system of expression other embodiments of the invention.
Figure 18 is the vertical view of the film deposition system of expression another embodiment of the present invention.
Figure 19 is the stereographic map of schematic configuration of inside of the film deposition system of expression another embodiment of the present invention.
Figure 20 is the vertical view of the film deposition system of expression another embodiment of the present invention.
Figure 21 is the sectional view of the film deposition system of expression another embodiment of the present invention.
Figure 22 A～22D is the general profile chart that is illustrated in the order of mounting wafer on the universal stage.
Figure 23 A and 23B are the approximate vertical views that is illustrated in the order of mounting wafer on the universal stage.
Figure 24 is the general profile chart of universal stage of other structure of film deposition system.
Figure 25 is the approximate vertical view of an example of the expression base plate processing system that uses film deposition system of the present invention.
Embodiment
With reference to the description of drawings embodiments of the invention.
Shown in Fig. 1 (being the sectional view along I-I line among Fig. 3), the film deposition system of one embodiment of the invention has: vacuum vessel 1, its plan view shape are roughly rounded flats; Universal stage 2, it is located in this vacuum vessel 1, has rotation center at the center of this vacuum vessel 1.The structure that vacuum vessel 1 can be separated with container body 12 for top board 11.Top board 11 is by the negative pressure state of vacuum vessel 1 inside, via containment member for example O RunddichtringO 13 be crushed on the container body 12, and keep the airtight conditions of vacuum vessel 1.On the other hand, when needs are separated top board 11 and container body 12, top board 11 is upwards lifted by not shown driving mechanism.
Universal stage 2 is fixed on the core 21 of drum from central division, and this core 21 is fixed on the upper end of the turning axle 22 that vertically extends.Turning axle 22 runs through the bottom surface sections 14 of container body 12, and its lower end is installed on the driving part 23, and this driving part 23 makes this turning axle 22 rotate around vertical axes, is to rotate around clockwise direction in this example.Turning axle 22 and driving part 23 are accommodated in the housing 20 of tubular of upper surface open.This housing 20 is installed in airtightly through provided thereon flange portion 20a on the lower surface of bottom surface sections 14 of vacuum vessel 1, like this, housing 20 internal atmospheres and outside atmosphere is kept apart.
Shown in Fig. 2 and 3, on the upper surface of universal stage 2, be formed with the circular depressions 24 that a plurality of (example is 5 among the figure) are used for taking in respectively wafer W.But, only represent 1 wafer W among Fig. 3.Recess 24 is in universal stage 2 first-class arranged spaced.Fig. 4 A is the projection sectional view that extends to circular arc from the 1st reaction gas nozzle 31 to the 2nd reaction gas nozzles 32.Shown in Fig. 4 A, recess 24 is bigger slightly than the diameter of wafer W, for example, has the diameter of 4mm size and the degree of depth that equates with wafer W thickness.Therefore, when wafer W is positioned on the recess 24, the zone on the surface of wafer W and the universal stage 2 except that recess 24 surperficial contour.Supposing that wafer W and other are interregional has big difference of altitude, and then this difference of altitude can make the gas flow turbulization, and the film uniformity on the wafer W is affected.Therefore, 2 surfaces are contour." contour " means difference of altitude here below about 5mm, but this difference should be as much as possible near zero in the working accuracy allowed band.Be formed with 3 through holes (not shown), 3 lifter pins (with reference to Fig. 8) pass these through hole liftings at the end of recess 24.The reverse side of lifter pin supporting wafer W makes wafer W lifting.
Recess 24 is the zones of taking in of wafer W, and to the wafer location, prevents that wafer W from flying out under the centrifugal action of generation in universal stage 2 rotations.But the zone of taking in of wafer W is not limited to recess 24, can be made of angle intervals configuration in accordance with regulations on universal stage 2, ways that the end of wafer W is kept.For example, wafer W's takes in the zone and can be made of electrostatic chuck.At this moment, the zone of this utilization absorption mounting wafer W is a substrate-placing portion.
With reference to Fig. 2 and 3, above universal stage 2, have the 1st reaction gas nozzle the 31, the 2nd reaction gas nozzle 32 and divided gas flow nozzle 41,42, they in accordance with regulations angle intervals radially extend.Adopt this structure, recess 24 can pass through nozzle 31,32,41 and 42 belows.In the illustrated embodiment, the 2nd reaction gas nozzle 32, divided gas flow nozzle the 41, the 1st reaction gas nozzle 31 and divided gas flow nozzle 42 dispose by clockwise in proper order with this.These gas jets 31,32,41,42 run through container body 12 surrounding wall portion, import part 31a, 32a, 41a, 42a as the gas of gas jet 31,32,41,42 ends and are installed on the periphery wall of wall and supported by it.Gas jet 31,32,41,42 is imported in the container 1 by the surrounding wall portion from container 1 in illustrated embodiment, but they also can import from cyclic protuberance 5 (aftermentioned).At this moment, can be arranged on the L shaped conduit of the outside surface upper shed of the periphery of protuberance 5 and top board 11, in container 1, on an opening of L shaped conduit, connect gas jet 31 (32,41,42), in container 1 outside, on another opening of L shaped conduit, connect gas and import part 31a (32a, 41a, 42a).
Though not shown, reaction gas nozzle 31 links to each other with gas supply source as the dual-tert-butyl aminosilane (BTBAS) of the 1st reactant gases, reaction gas nozzle 32 and ozone (O as the 2nd reactant gases 3) the gas supply source link to each other.
On the reaction gas nozzle 31,32, on the nozzle length direction, be arranged with to devices spaced apart the squit hole 33 that is used for spraying to the lower side reactant gases.In the present embodiment, squit hole 33 has the bore of about 0.5mm, being spaced with about 10mm on the length direction of reaction gas nozzle 31,32. Reaction gas nozzle 31,32 is respectively the 1st reaction gas supplying portion part and the 2nd reaction gas supplying portion.In addition, the lower zone of reaction gas nozzle 31 is to be used to make the 1st treatment zone P1 of BTBAS gas adsorption on wafer, and the lower zone of reaction gas nozzle 32 is to be used to make O 3The 2nd treatment zone P2 of gas adsorption on wafer.
On the other hand, divided gas flow nozzle 41,42 and nitrogen (N 2) gas supply source (not shown) link to each other.Divided gas flow nozzle 41,42 has the squit hole 40 that is used for spraying to the lower side divided gas flow.Squit hole 40 is arranged spaced in accordance with regulations along its length.In the present embodiment, squit hole 40 has the bore of about 0.5mm, along length direction being spaced by about 10mm of divided gas flow nozzle 41,42.
Divided gas flow nozzle 41,42 is arranged on separated region D, thereby the 1st treatment zone P1 and the 2nd treatment zone P2 are kept apart.Among each separated region D,, on the top board 11 of vacuum vessel 1, be provided with convex shaped part 4 as Fig. 2～shown in Figure 4.Convex shaped part 4 has segmental upper surface shape, and its top is positioned at the center of container 1, and circular arc is along near the configuration of container body 12 internal perisporiums.In addition, convex shaped part 4 has convex shaped part 4 is divided into the two-part slot part 43 that radially extends.Taken in divided gas flow nozzle 41 (42) in the slot part 43.Distance between the limit of the central shaft of divided gas flow nozzle 41 (42) and segmental convex shaped part 4 is substantially equal to the distance between another limit of the central shaft of divided gas flow nozzle 41 (42) and segmental convex shaped part 4.In addition, slot part 43 is halved convex shaped part 4 in the present embodiment, but in other embodiments, can be for example to form slot part 43 with convex shaped part 4 by the wideer mode of universal stage 2 sense of rotation upstream sides.
Adopt said structure, shown in Fig. 4 A, divided gas flow nozzle 41 (42) both sides have smooth and lower end face 44 (the 1st end face), have higher end face 45 (the 2nd end face) in the both sides of low end face 44.Convex shaped part 4 (end face 44) is formed with separated space, thereby this separated space is to stop the 1st and the 2nd reactant gases to enter to stop two kinds of Space H that the reactant gases blended is narrow between convex shaped part 4 and the universal stage 2.
With reference to Fig. 4 B, flow to the O of convex shaped part 4 from reaction gas nozzle 32 along the sense of rotation of universal stage 2 3Gas is prevented from entering this space, in addition, also is prevented from entering this space along the direction opposite with the sense of rotation of universal stage 2 from the BTBAS gas that reaction gas nozzle 31 flows to convex shaped part 4." gas is prevented from entering " is meant from the divided gas flow of divided gas flow nozzle 41 ejections, just N 2Between gaseous diffusion to the 1 end face 44 and universal stage 2 surfaces, be the lower side space that is blown into 2nd end face 45 adjacent in this example, can not enter this space from the 2nd end face 45 lower side spatial gases thus with the 1st end face 44.In addition, " gas can't enter " not only is meant fully can't enter into convex shaped part 4 lower side spatial situations from the 2nd end face 45 lower side spaces, there is partial reaction gas to enter even if also comprise, this reactant gases can further not advance to divided gas flow nozzle 41 yet, the blended situation can not take place thus.That is, as long as can play this effect, separated region D just can keep apart the 1st treatment zone P1 and the 2nd treatment zone P2.In addition, the gas that is adsorbed on the wafer certainly can be by in the separated region D.Therefore, gas is prevented from entering the gas that only means in the gas phase and is prevented from entering.
With reference to Fig. 1, Fig. 2 and Fig. 3, the lower surface of top board 11 is provided with cyclic protuberance 5, and the inner peripheral of this protuberance 5 is relative with the periphery of core 21.Protuberance 5 is relative with universal stage 2 in the exterior lateral area of core 21.In addition, protuberance 5 and convex shaped part 4 form as one, and the lower surface of the lower surface of convex shaped part 4 and protuberance 5 forms a plane.That is, the lower surface of protuberance 5 is equal apart from the height of universal stage 2 with the lower surface (end face 44) of convex shaped part 4 apart from the height of universal stage 2.This highly is the height H that the back will be mentioned.But protuberance 5 and convex shaped part 4 might not be wanted one, and split also can.In addition, Fig. 2 and Fig. 3 represent that convex shaped part 4 is also stayed in the container 1 but the internal structure of the container 1 that top board 11 is removed.
In the present embodiment, the generation type of separated region D is as follows, forms slot part 43 on the fanning strip that constitutes convex shaped part 4, and divided gas flow nozzle 41 (42) is configured in the slot part 43.But the ground, both sides that also two fanning strips can be configured in divided gas flow nozzle 41 (42) is installed in these two fanning strips the lower surface of top board 11 by screw.
In the present embodiment, divided gas flow nozzle 41 (42) be towards under, for example bore is the squit hole of 0.5mm, separate the 10mm compartment of terrain along the length direction of nozzle and arrange.In addition, reaction gas nozzle 31,32 also can adopt towards under, for example bore is the squit hole of 0.5mm, for example separate the 10mm compartment of terrain along the nozzle length direction and arrange.
In the present embodiment, in container 1, handle under the situation of wafer W of the about 300mm of diameter, the edge of convex shaped part 4 is for example 140mm apart from the inner arc li (Fig. 3) of universal stage rotation center 140mm in the length that makes progress in week, and the edge is for example 502mm with the circular arc lo (Fig. 3) in the corresponding outside of most external of the recess 24 of universal stage 2 in the length that makes progress in week.In addition, along the circular arc lo in the outside from a sidewall of convex shaped part 4 to the approaching length of sidewall on Zhou Fangxiang of slot part 43 be about 246mm.
In addition, the lower surface of convex shaped part 4, just end face 44 to the height h (with reference to Fig. 4 A) on the surface of universal stage 2 for example be from about 0.5mm to about 10mm, preferably about 4mm.In addition, the speed setting of universal stage 2 is for example 1rpm～500rpm.In order to ensure the separation function of separated region D, also can for example wait by experiment according to the pressure in the processing vessel 1 or the rotating speed of universal stage 2 etc., set the size of convex shaped part 4 and the height h that convex shaped part 4 lower surfaces (the 1st end face 44) arrive the surface of universal stage 2.In addition, divided gas flow adopts N in the present embodiment 2Gas, but as long as divided gas flow does not constitute influence to the film forming of silicon oxide also can adopt rare gas element such as He or Ar gas or hydrogen etc.
To be expression dissect half of the sectional view that obtains along A-A line among Fig. 3 to Fig. 5, expression convex shaped part 4 and the protuberance 5 that forms as one with convex shaped part 4 among the figure.With reference to Fig. 5, it is L shaped joggling part 46 that convex shaped part 4 has warpage in its outer rim.Because convex shaped part 4 is installed on the top board 11 and can separates together with top board 11 and container body 12, therefore, between joggling part 46 and the universal stage 2, and joggling part 46 and container body 12 between have a little gap, but joggling part 46 fills up the space between universal stage 2 and the container body 12 basically, can prevent from the 1st reactant gases (BTBAS) of reaction gas nozzle 31 and passes this gap from the 2nd reactant gases (ozone) of reaction gas nozzle 32 and mix.Gap between joggling part 46 and the container body 12, and joggling part 46 and universal stage 2 between a little gap be the roughly the same size of height h with 4 end face 44 from above-mentioned universal stage to convex shaped part.In the illustrated embodiment, the sidewall that the periphery with universal stage 2 of joggling part 46 is relative constitutes the internal perisporium of separated region D.
Referring again to the sectional view along I-I line shown in Figure 3 is Fig. 1, and container body 12 has concave part on the interior perimembranous of the container body 12 relative with universal stage 2 peripherys.Below, this concave part is called exhaust gas region 6.The below of exhaust gas region 6 is provided with venting port 61 (another venting port 62 is with reference to Fig. 3), and this venting port 61 links to each other with vacuum pump 64 via the vapor pipe 63 that another venting port 62 also can use.In addition, vapor pipe 63 is provided with pressure regulator 65.Can a plurality of pressure regulators 65 be set corresponding to corresponding venting port 61,62.
Referring again to Fig. 3, from the top, venting port 61 be configured in the 1st reaction gas nozzle 31 and with respect to the 1st reaction gas nozzle 31 between the convex shaped part 4 in the dextrorotation veer downstream of universal stage 2.Adopt this structure, venting port 61 can be exclusively used in the BTBAS gas that ejects from the 1st reaction gas nozzle 31 in fact.On the other hand, from the top, venting port 62 be configured in the 2nd reaction gas nozzle 32 and with respect to the 2nd reaction gas nozzle 32 between the convex shaped part 4 in the dextrorotation veer downstream of universal stage 2.Adopt this structure, venting port 62 can be exclusively used in the O that ejects from the 2nd reaction gas nozzle 32 in fact 3Gas.Therefore, the venting port 61,62 that constitutes like this can assist separated region D to prevent BTBAS gas and O 3Gas mixes.
In the present embodiment, container body 12 is provided with two venting ports, but in other embodiments, three venting ports can be set also.For example, can the 2nd reaction gas nozzle 32 and with respect to the 2nd reaction gas nozzle 32 between the separated region D of universal stage 2 dextrorotation veer upstreams, append a venting port be set.In addition, also can further append somewhere venting port is set.In illustrative example, by venting port 61,62 being located at than on the low position of universal stage 2, from the gap exhaust between vacuum vessel 1 internal perisporium and universal stage 2 peripheries, but venting port 61,62 also can be located on the sidewall of container body 12.In addition, when being located at venting port 61,62 on container body 12 sidewalls, the position of venting port 61,62 can be than universal stage 2 height.In this case, gas flows to the surperficial high venting port 61,62 of position than universal stage 2 along the surface flow of universal stage 2.Therefore, the particulate in container 1 is not blown afloat on this aspect, with venting port for example be located at compare on the top board 11 more favourable.
As Fig. 1, Fig. 2 and shown in Figure 6, the space between the bottom 14 of universal stage 2 and container body 12 is provided with the cyclic heating unit 7 as the heating part, like this, via universal stage 2, the wafer W on the universal stage 2 is heated to the temperature of manufacturing process program decision.In addition, cap assembly 71 is set to centering on heating unit 7 below the universal stage 2 and near the periphery of universal stage 2, and the space that heating unit 7 is set is marked by the area region from heating unit 7 outsides.Cap assembly 71 has flange part 71a in the upper end, flow in the cap assembly 71 in order to prevent gas, flange part 71a is configured to make between universal stage 2 lower surfaces and the flange part keep minim gap.
Referring again to Fig. 1, bottom 14 has protrusion in the inboard of cyclic heating unit 7.The upper surface of protrusion, between universal stage 2 and the protrusion and approaching between protrusion and core 21, between the upper surface and universal stage 2 of protrusion, and the inboard surface of the upper surface of protrusion and core 21 between leave a little gap.In addition, bottom 14 has the centre hole of turning axle 22 break-through.The internal diameter of this centre hole is bigger slightly than the diameter of turning axle 22, has to pass the gap that flange part 20a is communicated with housing 20.Sweeping gas supply-pipe 72 links to each other with the top of flange part 20a.In addition, in order to purge the zone that is used for taking in heating unit 7, a plurality of sweeping gas supply-pipes 73 angle intervals in accordance with regulations links to each other with heating unit 7 lower zones.
Adopt such structure, by the gap between the lower surface of the gap between the protrusion of gap, core 21 and bottom 14 between turning axle 22 and bottom 14 centre holes, the protrusion that reaches bottom 14 and universal stage 2, N 2Sweeping gas flows to the heating unit space from sweeping gas supply-pipe 72.In addition, N 2Gas flows to the space of heating unit 7 downsides from sweeping gas supply-pipe 73.In addition, this N 2The gap that sweeping gas passes between the lower surface of the flange part 71a of cap assembly 71 and universal stage 2 flows into venting port 61.N 2Flowing of this mode of sweeping gas represented with arrow in Fig. 7.N 2Sweeping gas plays a role as divided gas flow, and its function is, prevents that the space of the 1st (the 2nd) reactant gases below universal stage 2 from refluxing and mix with the 2nd (the 1st) reactant gases.
With reference to Fig. 7, the central part of the top board 11 of divided gas flow supply-pipe 51 and container 1 links to each other, thereby, as the N of divided gas flow 2Gas is fed to the space 52 between top board 11 and the core 21.The divided gas flow that is fed to this space 52 passes the close clearance 50 between protuberance 5 and the universal stage 2, along the surface flow of universal stage 2, arrives exhaust gas region 6.This space 53 and gap 50 separated gases are full of, therefore, and reactant gases (BTBAS, O 3) can not mix via the central part of universal stage 2.Promptly, the film deposition system of present embodiment is in order to keep apart the 1st treatment zone P1 and the 2nd treatment zone P2, central zone C is set, and this central zone C is come out by the rotating center section and container 1 zoning of universal stage 2, has the ejiction opening of divided gas flow to the upper surface ejection of universal stage 2.In addition, in illustrated embodiment, ejiction opening is equivalent to the narrow gap 50 between protuberance 5 and the universal stage 2.
In addition, as Fig. 2, Fig. 3 and shown in Figure 8, be formed with delivery port 15 on the sidewall of container body 12.Wafer W carries in vacuum vessel 1 or sends from vacuum vessel 1 by the conveying arm 10 of outside through delivery port 15.This delivery port 15 is provided with gate valve (not shown), thereby carries out the switching of this delivery port 15.Recess 24 and the delivery port 15 of taking in the zone as wafer on the universal stage 2 are aimed at, open gate valve after, in vacuum vessel 1, carry wafer W by conveying arm 10, and wafer W be positioned over recess 24 from conveying arm 10.For wafer W is descended to recess 24 from conveying arm 10, in addition,, be provided with lifter pin 16 (Fig. 8) for wafer W jack-up from the recess 24, lifter pin is passed in the through hole that forms on the recess 24 of universal stage 2 and carries out lifting by hoisting appliance (not shown).
In addition, on the film deposition system of present embodiment, be provided with installing the control part 100 that whole action is controlled.This control part 100 has process controller 100a, user interface part 100b and the storing device 100c that is made of for example computer.User interface part 100b has: indicating meter, and it is used to be shown as the working condition of film device; Keyboard or touch-screen (not shown) supply the operator of film deposition system to select the manufacturing process program, or are changed the parameter of manufacturing process program by process management person; Deng.
Storing device 100c stores and makes process controller 100a implement polytechnic sequence of control, manufacturing process program and polytechnic parameter etc.In addition, these programs have the step group who is used to carry out for example action described later.These sequence of control and manufacturing process program are read out and implement by process controller 100a according to the instruction from user interface part 100b.In addition, these procedure stores but also can be by corresponding with it input-output unit (not shown) the storing device 100c that packs in computer-readable storage media 100d.Computer-readable storage media 100d can be hard disk, CD, CD-R/RW, DVD-R/RW, floppy disk, semiconductor memory etc.In addition, program also can be downloaded in storing device 100c by the networking circuit.
Next, the action to the film deposition system of present embodiment describes.At first, rotation universal stage 2 makes recess 24 aim at delivery port 15, opens gate valve (not shown).Then, transfer wafer W via delivery port 15 to container 1 by conveying arm 10.Wafer W fetches and delivers by lifter pin 16, after conveying arm 10 is extracted from container 1, by the lifter pin 16 that is driven by hoisting appliance (not shown), wafer W is put into recess 24.Above-mentioned a succession of action is carried out five times repeatedly, and five wafer W are equipped on the universal stage 2.Next, predefined pressure will be extracted into by vacuum pump 64 in the vacuum vessel 1.Clockwise direction rotation when universal stage 2 beginning edges are observed from the top.Universal stage 2 is heated to the temperature (for example 300 ℃) of regulation in advance by heating unit 7, and wafer W is heated by being positioned on the universal stage 2.W is heated at wafer, after confirming to be maintained at the temperature of regulation by temperature sensor (not shown), supply with the 1st reactant gases (BTBAS) by the 1st reaction gas nozzle 31 to the 1st treatment zone, supply with the 2nd reactant gases (O to the 2nd treatment zone P2 by the 2nd reaction gas nozzle 32 3).In addition, supply with divided gas flow (N 2).
Among the present invention, the handover of the wafer W of present embodiment is specifically described with reference to Fig. 9.
As shown in Figure 9, in the present embodiment, be provided with lifter pin moving part 201 in the recess 24 of universal stage 2, this lifter pin moving part 201 is used to make the lifter pin 16 of transferring wafer W to reach along the vertical direction to move radially.Lifter pin moving part 201 is subjected to control it from the control signal of control part 100 shown in Figure 3 and moves by Control Shaft 202.Lifter pin moving part 201 can not only make three lifter pin 16 liftings, and three lifter pins 16 are radially moved simultaneously.Can only make lifter pin 16 move along the vertical direction to reach radially and move, can also make lifter pin 16 and lifter pin moving part 201 one move along the vertical direction to reach radially and move.In addition, lifter pin 16 is moved along the vertical direction, lifter pin 16 and lifter pin moving part 201 one are radially moved, lifter pin 16 and lifter pin moving part 201 one are moved along the vertical direction, lifter pin 16 is radially moved.
Next, with reference to Figure 10, the order of handover of the wafer W of present embodiment is described.In the present embodiment, the diameter of wafer W is 300mm, and the diameter of recess 24 is 304mm.Therefore, recess 24 is than the big 4mm of wafer W diameter.
The figure of the state of Figure 10 A after to be expression carry wafer W on three lifter pins 16 that the recess 24 that is placed at universal stage 2 is provided with by conveying arm 10 promptly, is the figure of the state after the operation of expression mounting substrate finishes.Conveying arm 10 moves to delivery port 15 sides after wafer W being placed on three lifter pins 16, thereby and not shown.
Then, shown in Figure 10 B, make three lifter pins, 16 whole declines, make the recess 24 of wafer W and universal stage 2 approaching.Then, after wafer W being dropped to enter in the recess 24, stop action (the 1st decline mobile process).Under this state, wafer W is positioned at the surperficial low position than universal stage 2.
Then, shown in Figure 10 C, the periphery that makes wafer W move to wafer W contacts or approaching position (moving horizontally operation) with the wall of the recess 24 of universal stage 2.The periphery of wafer W contacts or approaching part with the wall of the recess 24 of universal stage 2, is from the center of universal stage 2 part farthest on recess 24 walls.The moving through of wafer W makes three lifter pin 16 integral body move to the radial outside direction of universal stage 2 to carry out.Moving of the lifter pin 16 of this moment only is that radial along universal stage 2 moves.The wall of the recess 24 of universal stage 2 can be illustrated taper.In this case, with wafer W is contacted with recess 24 walls compare, preferably make wafer W move to the prescribed position approaching with wall.Then, shown in Figure 10 D, descend, make the wafer W and the bottom of the recess 24 of universal stage 2 contact, be subjected to mounting (the 2nd decline mobile process) by making three lifter pins 16.By above action, as shown in figure 11, wafer W is positioned in the bottom of the recess 24 of universal stage 2.
Wafer W is along on the universal stage 2 radial peripheral direction, contacts with the wall of the recess 24 of universal stage 2 or approaching.Therefore, even if universal stage 2 high speed rotating, its centrifugal force can not make the powerful collision of wall of the recess 24 of wafer W and universal stage 2 yet, and therefore, wafer W breaks or to occur breaking scarce possibility extremely low.Therefore, can prevent from that wall because of the recess 24 of wafer W and universal stage 2 from contacting to produce particulate, and can prevent the device environment pollution that causes thus or in film forming film, sneak into impurity.
The handover of this wafer W is undertaken by universal stage 2 is rotated off and on, difference mounting wafer W in five recesses 24 of universal stage 2.Next, will take out the pressure that is default in the vacuum vessel 1, universal stage 2 is turned clockwise and utilize heating unit 7 heating wafer W by vacuum pump 64.Specifically, universal stage 2 is heated unit 7 and is heated to for example 300 ℃ in advance, and wafer W mounting is on this universal stage 2 and be heated.By not shown temperature sensor, after the temperature of affirmation wafer W is design temperature, spray BTBAS gas and O respectively from the 1st reaction gas nozzle 31 and the 2nd reaction gas nozzle 32 3Gas is from the N of divided gas flow nozzle 41,42 ejections as divided gas flow 2Gas.
During the 1st treatment zone P1 below wafer W passes the 1st reaction gas nozzle 31, the BTBAS molecular adsorption on the surface of wafer W, during the 2nd treatment zone P2 below wafer W passes the 2nd reaction gas nozzle 32, O 3Molecular adsorption is passed through O on the surface of wafer W 3Oxidation BTBAS molecule.Therefore, wafer W under the rotation of universal stage 2 drives, by regional P1, P2 the two once after, form one deck silicon oxide molecular layer on the wafer W surface.Next, wafer W alternately repeatedly passes regional P1, P2, deposits the silicon oxide film of regulation thickness at the upper surface of wafer W.Behind the silicon oxide film of deposition regulation thickness, stop to supply with BTBAS gas and ozone gas, universal stage 2 is stopped the rotation.In addition, wafer W is sent from container 1 by conveying arm 10 successively by the reverse motion of input action.
By the rotation of universal stage 2, wafer W passes the 1st treatment zone P1 that is provided with the 1st reaction gas nozzle 31 and the 2nd treatment zone P2 that is provided with the 2nd reaction gas nozzle 32 alternately.Thus, the BTBAS gas adsorption is in wafer W, then, and O 3Gas adsorption is in wafer W, and oxidation BTBAS molecule forms one or more layers silicon oxide molecular layer.Thereby the molecular layer of cvd silicon oxide forms the silicon oxide film of stipulating thickness successively.
In addition, in above-mentioned film forming action, also from the N of divided gas flow supply-pipe 51 supplies as divided gas flow 2Gas, thus, from the center zone C, the N of the ejection of the surface from the gap 50 between protuberance 5 and the universal stage 2 along universal stage 2 just 2Gas.In the present embodiment, the space of the 2nd end face 45 belows, the space that just disposes reaction gas nozzle 31 (32) has than the low pressure in narrow space between central zone C and the 1st end face 44 and the universal stage 2.This be because, be adjacent to be provided with exhaust gas region 6 with the space of end face 45 belows, this space is by exhaust gas region 6 direct exhausts.In addition, also be because, narrow space form can utilize height h maintenance dispose between the space of reaction gas nozzle 31 (32) or the 1st (the 2nd) treatment zone P1 (P2) and narrow space between pressure difference.
Next, the flow pattern to gas is supplied with in container 1 from gas jet 31,32,41,42 describes with reference to Figure 12.Figure 12 is the figure that schematically shows flow pattern.As shown in the figure, the part of O that sprays from the 2nd reaction gas nozzle 32 3The part of gas is conflicted with the surface (and surface of wafer W) of universal stage 2, flows to the direction opposite with the sense of rotation of universal stage 2 along this surface.Next, this O 3Gas is by the effusive N of sense of rotation upstream side from universal stage 2 2Gas pushes back, and changes direction to the periphery of universal stage 2 and the internal perisporium direction of vacuum vessel 1.At last, O 3Gas flows into exhaust gas region 6, is passed through venting port 62 from container 1 exhaust.
O from 32 ejections of the 2nd reaction gas nozzle 3The remainder of gas conflicts with the surface (and wafer W upper surface) of universal stage 2, along the coflow of its surface to the sense of rotation of universal stage 2.This part of O 3Gas mainly is subjected to from the effusive N of center zone C 2Gas and the attraction force acts by venting port 62 flow to exhaust gas region 6.On the other hand, the O of this part 3A small amount of part of gas flows to the separated region D that is positioned at universal stage 2 sense of rotation downstream sides for the 2nd reaction gas nozzle 32, can enter the gap between end face 44 and the universal stage 2.But the height h in this gap is set at and seeks to stop under filming condition gas to flow into the height in this gap, therefore, can stop O 3Gas enters this gap.Even if a small amount of O is arranged 3Gas flows into this gap, these O 3Gas also can not flow into the depths of separated region D.Flow into a small amount of O in gap 3Gas is pushed back by the divided gas flow from 41 ejections of divided gas flow nozzle.Therefore, as shown in Figure 9, in fact on the surface of universal stage 2 along the whole O of sense of rotation mobile 3Gas all can flow to exhaust gas region 6, by from venting port 62 exhausts.
Similarly, from the ejection of the 1st reaction gas nozzle 31, to the direction opposite, along the part BTBAS gas of the surface flow of universal stage 2, be prevented from flowing into for the 1st reaction gas nozzle 31 in the end face 44 of the convex shaped part 4 of sense of rotation upstream side and the gap between the universal stage 2 with the sense of rotation of universal stage 2.Even if a small amount of BTBAS gas flows into wherein, also can be by N from 41 ejections of divided gas flow nozzle 2Gas pushes back.The BTBAS gas that pushes back and from the N of divided gas flow nozzle 41 2Gas is with the N from the ejection of center zone C 2Gas flows to the outer peripheral edges of universal stage 2 and the internal perisporium of container 1 together, passes through venting port 61 exhausts through exhaust gas region 6.
From the 1st reaction gas nozzle 31 spray to the lower side, to and the sense of rotation of universal stage 2 in the same way, can not flow into along the other parts of surface (and surface of wafer W) the mobile BTBAS gas of universal stage 2 for the 1st reaction gas nozzle 31 between the end face 44 and universal stage 2 at the convex shaped part 4 in sense of rotation downstream side.Even if a small amount of BTBAS gas flows into, it also can be by the N from 42 ejections of divided gas flow nozzle 2Gas pushes back.The BTBAS gas that pushes back and from the N of the divided gas flow nozzle 42 of separated region D 2Gas, from the N of center zone C ejection 2Gas flows to exhaust gas region 6, together by venting port 61 exhausts.
As mentioned above, separated region D can stop BTBAS gas or O 3Gas flows into separated region D, perhaps can fully reduce the BTBAS gas or the O that flow into separated region D 3The amount of gas perhaps can be with BTBAS gas or O 3Gas pushes back.Only be adsorbed on BTBAS molecule and O on the wafer W 3Molecule is allowed to pass through separated region D, for the deposition of film.
In addition, as Fig. 7 and shown in Figure 12, because from the outer peripheral edges ejection divided gas flow of center zone C to universal stage 2, therefore, the BTBAS gas (O of the 2nd treatment zone P2 of the 1st treatment zone P1 3Gas) can not flow into central zone C.Even if a small amount of BTBAS (O of the 2nd treatment zone P2 of the 1st treatment zone P1 3Gas) flow into central zone C, this BTBAS gas (O 3Gas) also can be by N 2Gas pushes back, and can stop the BTBAS gas (O of the 2nd treatment zone P2 of the 1st treatment zone P1 3Gas) pass central zone C and flow into the 2nd treatment zone P2 (the 1st treatment zone P1).
BTBAS gas (the O of the 2nd treatment zone P2 that also can stop in addition, the 1st treatment zone P1 3Gas) pass the space between universal stage 2 and container body 12 internal perisporiums and flow into the 2nd treatment zone P2 (the 1st treatment zone P1).This be because, joggling part 46 forms downwards from convex shaped part 4, gap between joggling part 46 and the universal stage 2, and joggling part 46 and container body 12 internal perisporiums between the gap in size with the end face 44 of convex shaped part 4 to the height h of universal stage 2 about equally, thereby avoided in fact being communicated with between two treatment zones.Therefore, BTBAS gas is by from venting port 61 exhausts, O 3Gas is by from venting port 62 exhausts, and these two kinds of reactant gasess can not mix.In addition, the space of universal stage 2 belows is by the N that supplies with from sweeping gas supply- pipe 72,73 2Gas purges.Therefore, BTBAS gas can not pass universal stage 2 belows and flow into the 2nd treatment zone P2.
So far, the film forming processing finishes, and by the action opposite with input action, successively each wafer is sent by conveying arm 10.
The optimizing technology parameters of the film deposition system of present embodiment is as follows:
The rotating speed of universal stage 2: 1～500rpm (diameter of wafer W is under the situation of 300mm)
The pressure of container 1: 1067Pa (8Torr)
Wafer temperature: 350 ℃
The flow of BTBAS gas: 100sccm
O 3The flow of gas: 10000sccm
N from divided gas flow nozzle 41,42 2The flow of gas: 20000sccm
N from divided gas flow supply-pipe 51 2The flow of gas: 5000sccm
The rotating speed of universal stage 2: 600 change per minute (by necessary thickness decision)
Adopt the film deposition system of present embodiment, film deposition system has the 1st treatment zone and the supply of BTBAS gas that O is arranged in supply 3Between the 2nd treatment zone of gas, have the separated region D that comprises low end face 44, therefore, can prevent BTBAS gas (O 3Gas) flow into the 2nd treatment zone P2 (the 1st treatment zone P1), and prevent BTBAS gas (O 3Gas) and O 3Gas (BTBAS gas) mixes.Therefore, make universal stage 2 rotations of mounting wafer W, allow wafer W pass the 1st treatment zone P1, separated region D, the 2nd treatment zone P2, to reach separated region D, thereby implement the deposition of silicon oxide film effectively with MLD (ALD) pattern.In addition, in order to prevent BTBAS gas (O more effectively 3Gas) flow into the 2nd treatment zone P2 (the 1st treatment zone P1) and and O 3Gas (BTBAS gas) mixes, and separated region D also comprises ejection N 2The divided gas flow nozzle 41,42 of gas.In addition, the vacuum vessel 1 of the film deposition system of present embodiment has band ejection N 2Therefore the central zone C of the squit hole of gas, can prevent BTBAS gas (O 3Gas) pass that central zone C flows into the 2nd treatment zone P2 (the 1st treatment zone P1) and and O 3Gas (BTBAS gas) mixes.In addition, BTBAS gas and O 3Gas can not mix, and therefore, basically not to universal stage 2 cvd silicon oxides, thereby the problem that can reduce particulate takes place.
In addition, in the film deposition system of present embodiment, universal stage 2 has five recesses 24, can handle the 5 wafer W of mounting in five recesses 24 of correspondence in one batch, one of can be in five recesses 24 mounting one wafer, also can on universal stage 2, only form a recess 24.
With regard to the reactant gases that uses in the film deposition system of embodiment of the present invention, can also adopt DCS (dichlorosilane), HCD (disilicone hexachloride), TMA (trimethyl aluminium), 3DMAS (three (dimethylamino) silane), TEMAZ[(tetraethyl-methylamino) zirconium], TEMAH[(tetraethyl-methylamino) hafnium [, Sr (THD) 2[(acid of bis-tetramethyl methyl heptadione) strontium], Ti (MPD) are (THD) 2[(acid of methyl heptadione bis-tetramethyl heptadione) titanium], mono amino silane etc.
Near universal stage 2 outer peripheral edges, just effect has big more centrifugal force more, and for example, in the part near universal stage 2 outer peripheral edges, BTBAS gas moves to separated region D with bigger speed.Therefore, in the part near universal stage 2 outer peripheral edges, the possibility that flows into BTBAS gas in the gap between end face 44 and the universal stage 2 is higher.Therefore, if make the outer more periphery of width (along the length of sense of rotation) of convex shaped part 4 just wide more, then can make BTBAS gas be difficult to enter this gap.From this viewpoint, in the present embodiment, as mentioned above, convex shaped part 4 preferably has segmental upper surface shape.
Below, the size of illustration convex shaped part 4 (or end face 44) once more.With reference to Figure 13 A and Figure 13 B, end face 44 forms narrow space in divided gas flow nozzle 41 (42) both sides, on end face 44, as the length L of the corresponding circular arc in path that is passed with the WO of crystal circle center, can be wafer W diameter length about 1/10～about 1/1, be preferably about more than 1/6.Particularly, when wafer W diameter was 300mm, this length L was preferably more than about 50mm.More in short-term, the height h of the narrow space between end face 44 and the universal stage 2 must hang down in this length L, flows into narrow space so that can prevent reactant gases effectively.But if length L is too short, h is highly extremely low for height, and then universal stage 2 may collide with end face 44, produces particulate and polluting wafer, or may cause wafer breakage.Therefore, for fear of universal stage 2 and end face 44 collisions, need to suppress universal stage 2 vibrations, or need make the scheme of universal stage 2 stable rotations.On the other hand, length L is shorter making, and keeps again under the bigger situation of the height h of narrow space, flows into the narrow space between end face 44 and the universal stage 2 in order to prevent reactant gases, just have to reduce the rotating speed of universal stage 2, this is making significant adverse on this aspect of productivity.Put from this, the length L on the corresponding circular arc in path that is passed with the WO of crystal circle center on the end face 44 is preferably more than about 50mm.But the size of convex shaped part 4 or end face 44 is not limited to above-mentioned size, also can adjust according to the processing parameter or the wafer size that use.In addition, narrow space is as long as in height can make divided gas flow flow to treatment zone P1 (P2) from separated region D, expressed as described above, the height h of narrow space not only can also adjust according to for example area of end face 44 according to employed processing parameter or wafer size.
In addition, in the above-described embodiment, configuration divided gas flow nozzle 41 (42) in the slot part 43 on being located at convex shaped part 4 is at the lower end face 44 of the both sides of divided gas flow nozzle 41 (42) configuration.But, in other embodiments, as shown in figure 14, can be formed with in the inside of convex shaped part 4 along the stream 47 that radially extends of universal stage 2 and replace divided gas flow nozzle 41, length direction along this stream 47 forms a plurality of gas squit holes 40, and then from these gas squit holes 40 ejection divided gas flow (N 2Gas).
The end face 44 of separated region D is not limited to tabular surface, can be bent into concave shape shown in Figure 15 A, or form convex shape shown in Figure 15 B, perhaps constitutes waviness shown in Figure 15 C.
In addition, convex shaped part 4 also can be a hollow, can be the structure that imports divided gas flow in the inside of hollow.At this moment, can shown in Figure 16 A, 16B, 16C, dispose a plurality of gas squit holes 33.
With reference to Figure 16 A, a plurality of gas squit holes 33 are the narrow slit shape that tilts respectively.These inclination narrow slits (a plurality of gas squit hole 33) are radially overlapping with adjacent narrow slit part along universal stage 2.Among Figure 16 B, a plurality of gas squit holes 33 all are circular.These circular holes (a plurality of gas squit hole 33) are seen on the whole, are configured to upwards extend and crooked lines in universal stage 2 footpaths.Among Figure 16 C, a plurality of gas squit holes 33 all have the shape of circular-arc narrow slit.These circular-arc narrow slits (a plurality of gas squit hole 33) are arranged spaced in accordance with regulations upwards in universal stage 2 footpath.
In addition, in the present embodiment, convex shaped part 4 has the segmental of being roughly upper surface shape, but in other embodiments, also can be to have rectangle or a foursquare upper surface shape shown in Figure 16 D.In addition, convex shaped part 4 also can be shown in Figure 16 E, and upper surface integral body is fan-shaped, and has the side 4Sc of concavity bending.In addition, convex shaped part 4 can also be shown in Figure 16 F, and upper surface is fan-shaped on the whole, and the side 4Sv with convex curvature.Moreover, can be shown in Figure 16 G, convex shaped part 4 is the side 4Sc of concavity in the part of universal stage 2 (Fig. 1) sense of rotation upstream side, convex shaped part 4 is plane side 4Sf in the part in universal stage 2 (Fig. 1) sense of rotation downstream side.In addition, in Figure 16 D～Figure 16 G, dotted line is illustrated in the slot part 43 (Fig. 4 A, 4B) that forms on the convex shaped part 4.In these cases, the divided gas flow nozzle 41 (42) that is accommodated in slot part 43 (Fig. 2) extends from central part, for example protuberance 5 (Fig. 1) of container 1.
The heating unit 7 that is used to heat wafer can replace resistance heater, adopts the structure of heating lamp.In addition, heating unit 7 can not be located at the lower side of universal stage 2, and is provided in a side of the upper side of universal stage 2, can also be located at two side's sides up and down simultaneously.
Treatment zone P1, P2 and separated region D can dispose in other embodiments as illustrated in fig. 17.With reference to Figure 17, compare with delivery port 15, be used to supply with the 2nd reactant gases (O for example 3Gas) the 2nd reaction gas nozzle 32 is positioned at universal stage 2 sense of rotation upstream sides, but also can be arranged between delivery port 15 and the divided gas flow supplying-nozzle 42.Even if configuration so basically also can be mobile by mode shown in Figure 17 arrow from the gas of each nozzle and central zone C ejection, can prevent the mixing of two reactant gasess.Therefore, even if dispose like this, also can realize the deposition of suitable MLD (ALD) pattern.
In addition, as mentioned above, can by bolt fanning strip be installed at top board 11 lower surfaces so that 2 fanning strips are positioned at the mode of divided gas flow nozzle 41 (42) both sides, thereby constitute separated region D.Figure 18 is the vertical view of this structure of expression.At this moment, in order to bring into play the centrifugation of separated region D effectively, the emission rate that can consider divided gas flow and reactant gases is determined the distance between convex shaped part 4 and the divided gas flow nozzle 41 (42) and the size of convex shaped part 4.
In the above-described embodiment, the 1st treatment zone P1 and the 2nd treatment zone P2 are the equal of the zone with the end face 45 that is higher than separated region D end face 44.But the one at least of the 1st treatment zone P1 and the 2nd treatment zone P2 also can have other relative with universal stage 2 and lower than end face 45 end face in reactant gases supplying-nozzle 31 (32) both sides.This is in order to prevent that gas from flowing into the gap between this end face and the universal stage 2.This end face is lower than end face 45, can be contour with the end face 44 of separated region D.Figure 19 represents such example of structure.As shown in the figure, segmental convex shaped part 30 is configured in and is used to supply with O 3The 2nd treatment zone P2 of gas, reaction gas nozzle 32 are disposed at the slot part (not shown) that forms on convex shaped part 30.In other words, among the 2nd treatment zone P2, gas jet is used for supply response gas, but should also can adopt the structure identical with separated region D by zone P2.In addition, convex shaped part 30 also can adopt the identical structure of hollow convex shaped part with example shown in Figure 16 A～Figure 16 C.
In addition, in order to form narrow space in divided gas flow nozzle 41 (42) both sides, as long as low end face (the 1st end face) 44 is set, in other embodiments, above-mentioned end face, that is to say, can be located at reaction gas nozzle 31,32 both sides than end face 45 end face 44 low end faces in the roughly same height low and separated region D, extend to end face 44.In other words, the convex shaped part 400 that other can be installed on the lower surface of top board 11 replaces convex shaped part 4.Convex shaped part 400 is a shape roughly in the form of annular discs, roughly entire upper surface is relative with universal stage 2, takes in gas jet 31,32,41,42 respectively, has four groove 400a that radially extend, and below convex shaped part 400, between convex shaped part 400 and universal stage 2, leave narrow space.The height of this narrow space can be identical with above-mentioned height h.If use convex shaped part 400, then the reactant gases (perhaps narrow space) below convex shaped part 400 from reaction gas nozzle 31 (32) ejections spreads to reaction gas nozzle 31 (32) both sides, from the divided gas flow of divided gas flow nozzle 41 (42) ejections, (perhaps in the narrow space) spreads to divided gas flow nozzle 41 (42) both sides below convex shaped part 400.This reactant gases and divided gas flow conflux in narrow space, by venting port 61 (62) exhausts.In this case, the reactant gases that sprays from reaction gas nozzle 31 also can not mix with the reactant gases from reaction gas nozzle 32 ejections, thereby can implement the deposition of proper A LD (or MLD) pattern.
In addition, the convex shaped part 4 of the hollow shown in also can arbitrary combination Figure 16 A～Figure 16 C, constitute convex shaped part 400, not using gas nozzle 31,32,41,42 and groove 400a spray reactant gases and the divided gas flow squit hole 33 from corresponding hollow convex shaped part 4 respectively.
In the above-described embodiments, the turning axle 22 that is used for rotating universal stage 2 is positioned at the central part of container 1.In addition, in order to prevent that reactant gases from passing central part and being mixed with each other, by the space 52 between divided gas flow purging core 21 and the top board 11.But container 1 also can be structure shown in Figure 21 in other embodiments.With reference to Figure 21, the bottom 14 of container body 12 has central opening, and containing box 80 is installed in this opening airtightly.In addition, top board 11 has central indentation 80a.Pillar 81 mountings are in the bottom surface of containing box 80, and the upper end of pillar 81 reaches the bottom surface of central indentation 80a.Pillar 81 can prevent from the 2nd reactant gases (O of the 1st reactant gases (BTBAS) of the 1st reaction gas nozzle 31 ejections and 32 ejections of the 2nd reaction gas nozzle 3) be mixed with each other through the central part of container 1.
In addition, with coaxial with pillar 81 and turnbarrel 82 is set around the mode of pillar 81.Turnbarrel 82 is installed in the bearing 86,88 of pillar 81 outside surfaces and is installed in bearing 87 supportings of containing box 80 medial surfaces.In addition, the outside surface of turnbarrel 82 is equipped with gear part 85.In addition, the inner peripheral surface of cyclic universal stage 2 is installed on the outside surface of turnbarrel 82.Driving part 83 is accommodated in the containing box 80, and the axle that stretches out from driving part 83 is equipped with gear 84.Gear 84 and gear part 85 engagements.Adopt such structure, turnbarrel 82 and universal stage 2 are driven by driving part 83 and rotate.
Sweeping gas supply-pipe 74 links to each other with containing box 80 bottoms, is used for supplying with sweeping gas to containing box 80.Thereby, flow in the containing box 80 for preventing reactant gases, the internal space pressure of containing box 80 can be maintained container 1 internal space height.Therefore, can not cause the film forming in the containing box 80, can reduce the frequency of maintenance.In addition, sweeping gas supply-pipe 75 links to each other with the conduit 75a that outside from container 1 extends to recess 80a inwall respectively, to turnbarrel 82 upper ends supply sweeping gas.Owing to this sweeping gas is arranged, so BTBAS gas and O 3Gas can not mix through the space between recess 80a inwall and turnbarrel 82 outside surfaces.Diagram two sweeping gas supply-pipes 75 and a conduit 75a among Figure 21, but the quantity of supply-pipe 75 and conduit 75a can be by can prevent BTBAS gas and O effectively 3Gas mixes near the inwall of recess 80a and the space between turnbarrel 82 outside surfaces and decides.
Among the embodiment of Figure 21, space between the upper end of the side surface of recess 80a and turnbarrel 82 is equivalent to spray the squit hole of divided gas flow, in addition, constitute the central zone that is positioned at vacuum vessel 1 central part by this divided gas flow squit hole, turnbarrel 82 and pillar 81.
Next, come wafer W method for transporting is described with other embodiment.
This method is to be called as the method that is installed, and for concrete order, describes with reference to Figure 22 and Figure 23.The employed wafer W of present embodiment diameter is identical with the foregoing description, is 300mm, and the diameter of recess 24 is 304mm.Like this, recess 24 is than the big 4mm of wafer W.
Shown in Figure 22 A, use to constitute the bar-shaped maintaining part of the conduct of substrate keeping arm on the arm 210,211 that is installed, wafer W is transported to universal stage 2 recess 24 directly over (substrate importing operation).On the be installed information slip of upper surface of arm 210,211 be shown among Figure 23 A.In the sequence of batching products, on the arm that is installed identical with aforementioned conveying arm 10, open not shown gate valve, pass delivery port 15 from the outside by the arm 210,211 that is installed wafer W moved on the recess 24 of universal stage 2.On the arm 210 that is installed be provided with two wafer contact part 210a, 210b, this wafer contact part 210a, 210b are the substrate maintaining part that is used for fixing the claw-like of wafer W.On the arm 211 that is installed be provided with the wafer contact part 211a as the substrate maintaining part of a claw-like.Wafer W and this three wafer contact part 210a, 210b, 211a are contacted, on wafer W is carried out, are installed, by on be installed arm 210,211 keep wafer W.On the arm 210,211 that is installed can reach moving radially of universal stage 2 along the vertical direction.In addition, as will be explained below, can (on the vertical direction on the drawing) dwindle or increase on be installed arm 210,211 at interval.
On circumferential section as the 24 edge portions of the recess on the universal stage 2, be provided with enough dark arm recess 212,213,214, make with wafer W mounting during wafer contact part 210a, 2 contacts of 210b, 211a discord universal stage in the bottom of the recess 24 of universal stage 2.Arm is dark with the recess 24 of the depth ratio universal stage 2 of recess 212,213,214.
Next, shown in Figure 22 B, descend, stop after making wafer W during dropping to the recess 24 that enters universal stage 2 (the 1st descend handover operation) by the arm 210,211 of being installed on making is whole.Under this state, the upper surface of wafer W is lower than the upper surface position of universal stage 2.
Next, shown in Figure 22 C, on be installed arm 210,211 radially (to paper left side) move to the peripheral part that makes wafer W and the wall of recess 24 contacts or approaching position (level handover operation).The wall of the recess 24 of the periphery of wafer W and universal stage 2 contacts or approaching part is from universal stage 2 centers part farthest on the wall of recess 24.Moving of the lifter pin 16 of this moment only is that radial along universal stage 2 moves.In addition, the wall of the recess 24 of universal stage 2 can be a taper as shown in the figure.In this case, with wafer W is contacted with recess 24 walls compare, wafer W is positioned at and the approaching prescribed position of recess 24 walls.
Then, shown in Figure 22 D, make the arm 210,211 that is installed further descend (the 2nd descend transfer operation).Particularly, the bottom position contacting that drops to the recess 24 of universal stage 2 of wafer W stops.Under this state, because arm is enough dark with recess 212,213,214, therefore, wafer contact part 210a, 210b, 211a can not contact with universal stage 2.
Figure 23 A represents the upper surface of the universal stage 2 under this state.Wafer W contacts or approaching at the recess 24 of universal stage 2 radial outsides and universal stage 2.
Then, shown in Figure 23 B, after the arm 210,211 that is installed on making moves down slightly, the interval of the arm 210,211 that is installed in the increase.Particularly, move by the top of arm 210 in figure that be installed on making, arm 211 below in figure that is installed is moved, the interval of the arm 210,211 that is installed in the increase moves to from wafer W position enough far away wafer contact part 210a, 210b, 211a.
Then, after arm 210,211 risings that are installed on making, move to radial outside (left), so far the mounting of wafer W finishes again.
In the above-described embodiments, lifter pin 16 needn't be set.In addition,, contact with the wall of the recess 24 of universal stage 2 or approaching because wafer W is in the position in the outside of universal stage 2, therefore, even if universal stage 2 high speed rotating also can not make the wall strong impaction of the recess 24 of wafer W and universal stage 2 because of centrifugal force.Therefore, wafer W breaks or to produce the broken possibility that lacks extremely low.Thus, can prevent to contact between wall the situation of the appearance particulate that produces, the environmental pollution in the device that can prevent to cause thus and in film forming film, sneak into impurity because of the recess 24 of wafer W and universal stage 2.
In addition, in the present embodiment, on be installed that set wafer contact part 210a, 210b, 211a is provided with three on the arm 210,211, but also can be provided with four or more.
In addition, as shown in figure 24, in the present embodiment, the universal stage 2 of film deposition system can be following structure, promptly, as being shaped as of the recess 24 of substrate-placing portion: on the side 24a that is positioned at universal stage 2 outer circumferential sides of recess 24, more side-prominent than the bottom surface 24b of recess 24 to the rotation center of universal stage 2 as the top 24c of recess 24 inlets.Adopt this structure, can prevent that wafer W flies out from recess 24 when universal stage 2 rotations under centrifugal action.This structure as the recess 24 of substrate-placing portion goes for all universal stages 2 of present embodiment.
The invention is not restricted to use two kinds of reactant gasess, also go for the situation that reactant gases more than three kinds is supplied with successively on substrate.In this case, for example press the order of the 1st reaction gas nozzle, divided gas flow nozzle, the 2nd reaction gas nozzle, divided gas flow nozzle, the 3rd reaction gas nozzle and divided gas flow nozzle, week at vacuum vessel 1 is upwards disposed each gas jet, and the separated region that comprises each divided gas flow nozzle can constitute like that with above-mentioned embodiment.
The film deposition system of embodiment of the present invention can be assembled on the substrate board treatment, and the one example is shown schematically among Figure 25.Substrate board treatment comprises: atmospheric transport chamber 102, and it is provided with conveying arm 103; Load lock (preparation room) 105, it can switch internal atmosphere between vacuum and normal atmosphere; Conveying chamber 106, it is provided with two conveying arm 107a, 107b; And the film deposition system 108,109 of embodiment of the present invention.In addition, also comprise in this treatment unit and be used for for example box platform (not shown) of wafer cassette 101 such as FOUP of mounting.Wafer cassette 101 can be sent to one of box platform, sends mouth with sending between box platform and the atmospheric transport chamber 102 and links to each other.Next, open the lid of wafer cassette (FOUP) 101, take out wafers from wafer cassette 101 by conveying arm 103 by closing mechanism (not shown).Next, carry wafer to load lock 104 (105).After load lock 104 (105) is deflated,, pass vacuum conveying chamber 106, the wafer in film deposition system 108,109 conveying load lock 104 (105) by conveying arm 107a (107b).In the film deposition system 108,109, with aforesaid method deposited film on wafer.Substrate board treatment has two film deposition systems 108,109 that can take in five wafer simultaneously, therefore can carry out ALD (or MLD) pattern film forming efficiently.
But the present invention is not limited to above-mentioned concrete disclosed embodiment, only otherwise break away from covering scope of the present invention, can also implement various modified examples and improvement example.

Claims (22)

1. a film deposition system in container, implements to supply with to substrate successively the circulation of at least two kinds of reactant gasess that react to each other, and the layer of formation reaction resultant on this substrate, is characterized in that this film deposition system comprises with deposited film:
Universal stage, it is located in the described container in revolvable mode;
The substrate-placing zone, it is located on the face of described universal stage, is used for the described substrate of mounting;
The 1st reaction gas supplying portion, its described face to described universal stage is supplied with the 1st reactant gases;
The 2nd reaction gas supplying portion, it away from described the 1st reaction gas supplying portion, and supplies with the 2nd reactant gases to a described face of described universal stage on the sense of rotation of described universal stage;
Separated region, it at the 1st treatment zone that is supplied to described the 1st reactant gases be supplied between the 2nd treatment zone of described the 2nd reactant gases, separates described the 1st treatment zone and described the 2nd treatment zone on described sense of rotation;
Middle section, for described the 1st treatment zone and described the 2nd treatment zone are kept apart, this middle section is positioned at the substantial middle of described container, and has the squit hole that sprays the 1st divided gas flow along a described face of described universal stage;
Venting port, it is used for described reactant gases is discharged with the divided gas flow that is diffused into described separated region both sides and from the divided gas flow of described middle section ejection;
The divided gas flow supply unit, it is located at described separated region, is used to supply with divided gas flow;
End face, it is located at described separated region, is positioned at the described sense of rotation both sides of described divided gas flow supply unit, forms narrow space between this end face and described universal stage, is used to make divided gas flow to flow to the treatment zone side from this separated region;
Hoisting appliance, it is used for the described substrate that is arranged in the described substrate-placing portion is carried out lifting,
Described hoisting appliance can not only move up at upper and lower with respect to described universal stage, can also upwards move in the footpath of universal stage.
2. film deposition system according to claim 1 is characterized in that described hoisting appliance comprises the lifter pin more than three.
3. film deposition system according to claim 1 is characterized in that, this film deposition system also comprises:
Top board, it is at the separated region of supplying with the 1st divided gas flow by described divided gas flow supply unit, is oppositely arranged with the face of the formation substrate-placing portion of described universal stage;
The 2nd divided gas flow supply unit, it is used for the middle section from described universal stage, supplies with to be used for the 2nd divided gas flow that described the 1st reactant gases and described the 2nd reactant gases are kept apart;
Venting port, it is arranged on the position lower than universal stage, is used for described the 1st reactant gases, described the 2nd reactant gases, described the 1st divided gas flow and described the 2nd divided gas flow through the periphery of described universal stage and the gap exhaust between the described container internal perisporium.
4. film deposition system according to claim 1 is characterized in that, this film deposition system also has the rotating mechanism that makes described universal stage rotation when film forming.
5. film deposition system according to claim 1 is characterized in that, described substrate-placing portion is formed on concavity on the surface of described universal stage,
The surface of described universal stage and mounting in the surface of the described substrate of described substrate-placing portion at sustained height, perhaps substrate surface surperficial low than universal stage.
6. film deposition system according to claim 5 is characterized in that, at the outer circumferential side of described universal stage, than the bottom surface of described concavity, the top of described substrate-placing portion is outstanding to the direction opposite with described outer circumferential side.
7. film deposition system according to claim 1 is characterized in that, the sidewall of described container is provided with the delivery port that is opened and closed by gate valve, with from the outside of described container to the described substrate of the delivered inside of described container.
8. film deposition system according to claim 7 is characterized in that, the conveying of the described substrate at described delivery port place is undertaken by conveying arm.
9. film deposition system according to claim 2 is characterized in that, by making described lifter pin along the moving radially of described universal stage, in the substrate-placing portion of described universal stage, with described substrate-placing in position farthest, center from universal stage.
10. a film deposition system in container, implements to supply with to substrate successively the circulation of at least two kinds of reactant gasess that react to each other, and the layer of formation reaction resultant on this substrate, is characterized in that this film deposition system comprises with deposited film:
Universal stage, it is located in the described container;
A plurality of substrate-placing portion, it is located on the universal stage, is used for the described substrate of mounting on the same circumference of described universal stage;
The 1st reaction gas supplying portion, the side that is formed with described substrate-placing portion that it is located in the described container is used to supply with the 1st reactant gases;
The 2nd reaction gas supplying portion, it is located at the side that is formed with described substrate-placing portion in the described container, and is positioned at the position away from described the 1st reaction gas supplying portion, is used to supply with the 2nd reactant gases;
The 1st divided gas flow supply unit, it is arranged at by the 1st reaction gas supplying portion and supplies with described the 1st treatment zone of the 1st reactant gases and supplied with by the 2nd reaction gas supplying portion between described the 2nd treatment zone of the 2nd reactant gases, and supply with the 1st divided gas flow, be used for described the 1st treatment zone and described the 2nd treatment zone are kept apart;
Delivery port, it is opened and closed by the gate valve that is located at described container side wall, with from the outside of described container to the described substrate of the delivered inside of described container;
The substrate keeping arm, it carries described substrate at described delivery port,
Described substrate keeping arm is made of two bar-shaped maintaining parts, a maintaining part is provided with at least one the substrate maintaining part that is used to keep described substrate, on another maintaining part, be used to keep at least two substrate maintaining parts of described substrate to be located at different positions.
11. film deposition system according to claim 10 is characterized in that, this film deposition system also comprises:
Top board, it is at the separated region of being supplied with the 1st divided gas flow by described divided gas flow supply unit, is oppositely arranged with the face of the formation substrate-placing portion of described universal stage;
The 2nd divided gas flow supply unit, it is used for supplying with from the central zone of described universal stage and is used for the 2nd divided gas flow that described the 1st reactant gases and described the 2nd reactant gases are kept apart;
Venting port, it is located at the position lower than described universal stage, is used for the gap exhaust between described universal stage periphery and described container internal perisporium of described the 1st reactant gases, described the 2nd reactant gases, described the 1st divided gas flow and described the 2nd divided gas flow.
12. film deposition system according to claim 10 is characterized in that, this film deposition system also has between two bar-shaped maintaining parts that are used to change described substrate keeping arm mechanism at interval.
13. film deposition system according to claim 10 is characterized in that, described substrate maintaining part has claw-like portion, and the edge portion in the described substrate-placing portion of described universal stage corresponding to described claw-like portion, is provided with the dark concave regions than described substrate-placing portion.
14. film deposition system according to claim 10 is characterized in that, this film deposition system also has the rotating mechanism that is used for making described universal stage rotation when film forming.
15. film deposition system according to claim 10 is characterized in that, described substrate-placing portion forms concavity on the surface of described universal stage,
The surface of described universal stage and mounting in the surface of the described substrate of described substrate-placing portion at sustained height, perhaps substrate surface surperficial low than universal stage.
16. film deposition system according to claim 15 is characterized in that, at the outer circumferential side of described universal stage, than the bottom surface of described concavity, the top of described substrate-placing portion is outstanding to the direction opposite with described outer circumferential side.
17. film deposition system according to claim 10 is characterized in that, by making described substrate keeping arm along the moving radially of described universal stage, in the substrate-placing portion of described universal stage, with described substrate-placing in position farthest, center from described universal stage.
18. a substrate board treatment is characterized in that, this substrate board treatment comprises:
The vacuum conveying chamber, its internal configuration has the substrate delivery section;
The described film deposition system of claim 1, it links to each other airtightly with described vacuum conveying chamber;
Preparatory vacuum chamber, it links to each other airtightly with described vacuum conveying chamber, can switch atmosphere between vacuum atmosphere and air atmosphere.
19. a substrate board treatment is characterized in that, this substrate board treatment comprises:
The vacuum conveying chamber, its internal configuration has the substrate delivery section;
The described film deposition system of claim 10, it links to each other airtightly with described vacuum conveying chamber;
Preparatory vacuum chamber, it links to each other airtightly with described vacuum conveying chamber, can switch atmosphere between vacuum atmosphere and air atmosphere.
20. a film, by repeatedly carrying out supplying with to substrate surface successively the circulation of at least two kinds of reactant gasess that react to each other, stacked resultant of reaction forms film, it is characterized in that,
Carry described substrate from the outside of vacuum vessel through delivery port, at the substrate-placing portion that is provided with for mounting substrate on the universal stage of vacuum vessel inside place, with substrate-placing in position farthest, center from described universal stage;
Make described universal stage rotation;
From the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion that in described vacuum vessel, is separated from each other setting, supply with the 1st reactant gases and the 2nd reactant gases to the face that is formed with substrate-placing portion of universal stage, and, carry out film forming from being arranged on the divided gas flow supply unit supply divided gas flow between the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion.
21. a film, by repeatedly carrying out supplying with to substrate surface successively the circulation of at least two kinds of reactant gasess that react to each other, stacked resultant of reaction forms film, it is characterized in that,
For the described substrate that transports through delivery port from the vacuum vessel outside is carried out mounting, on universal stage, be formed with the substrate-placing portion of concavity, the described substrate of mounting on hoisting appliance set in this substrate-placing portion;
With described substrate-placing after on the described hoisting appliance, described hoisting appliance is descended, described substrate is moved to surperficial low position than described universal stage;
After described substrate is moved, by make described hoisting appliance along described universal stage radially to the outer side shifting of described universal stage, described substrate is contacted or approaching with the wall of described substrate-placing portion;
After the radial outside that makes described hoisting appliance to described universal stage moves, described hoisting appliance is descended, with the bottom of described substrate-placing in described substrate-placing portion;
With described substrate-placing behind the bottom of described substrate-placing portion, make described universal stage rotation;
From the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion that in described vacuum vessel, is separated from each other setting, supply with the 1st reactant gases and the 2nd reactant gases to the face that is formed with substrate-placing portion of universal stage, and, carry out film forming from being arranged at the divided gas flow supply unit supply divided gas flow between described the 1st reaction gas supplying portion and described the 2nd reaction gas supplying portion.
22. a film, from the vacuum vessel outside after delivery port is delivered to described vacuum vessel with substrate, by repeatedly carrying out successively supplying with the circulation of at least two kinds of reactant gasess that react to each other to substrate surface, stacked resultant of reaction, form film, it is characterized in that
Use has two substrate keeping arms that are used to keep the bar-shaped maintaining part of described substrate, substrate is delivered to for the mounting substrate directly over the substrate-placing portion that forms concavity on the universal stage, this substrate keeping arm is on a maintaining part, be provided with the substrate maintaining part that at least one is used to keep substrate, on another maintaining part, be provided with at least two substrate maintaining parts that are used to keep substrate;
After carrying described substrate, descend by making described substrate keeping arm, described substrate is moved to surperficial low position than described universal stage;
After described substrate is descended, by make described substrate keeping arm along described universal stage radially to the outer side shifting of universal stage, described substrate is contacted or approaching with the wall of described substrate-placing portion;
The wall that makes described substrate with described substrate-placing portion contact or near after, make described substrate keeping arm drop to the bottom position contacting of described substrate and described substrate-placing portion;
After described substrate keeping arm is descended, make described universal stage rotation;
From the 1st reaction gas supplying portion and the 2nd reaction gas supplying portion that in described vacuum vessel, is separated from each other setting, face to the described substrate-placing of being formed with of described universal stage portion, supply with the 1st reactant gases and the 2nd reactant gases, and supply with divided gas flow from the divided gas flow supply unit that is arranged between described the 1st reaction gas supplying portion and described the 2nd reaction gas supplying portion.
CN200910172121A 2008-09-04 2009-09-04 Film deposition apparatus, substrate processing apparatus and film deposition method Pending CN101665923A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104451602A (en) * 2013-09-18 2015-03-25 东京毅力科创株式会社 Substrate processing apparatus and method for processing a substrate
CN104795344A (en) * 2014-01-17 2015-07-22 东京毅力科创株式会社 Vacuum processing apparatus and vacuum processing method
CN104805415A (en) * 2014-01-28 2015-07-29 东京毅力科创株式会社 Method for processing a substrate and substrate processing apparatus
CN105390372A (en) * 2014-09-02 2016-03-09 东京毅力科创株式会社 method of processing a substrate and substrate processing apparatus
CN109306467A (en) * 2017-07-26 2019-02-05 上海新昇半导体科技有限公司 Epitaxially growing equipment and method of vapor-phase growing
CN109306468A (en) * 2017-07-26 2019-02-05 上海新昇半导体科技有限公司 Susceptor, epitaxially growing equipment and method of vapor-phase growing
CN110468389A (en) * 2018-05-10 2019-11-19 三星电子株式会社 Depositing device
CN112740367A (en) * 2018-09-27 2021-04-30 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
CN114908333A (en) * 2021-02-08 2022-08-16 株式会社奈瑟斯比 Roll-to-roll atomic layer deposition apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1662821A (en) * 2002-08-07 2005-08-31 东京毅力科创株式会社 Placing table drive device and probe method
US20060177579A1 (en) * 2002-09-17 2006-08-10 Shin Cheol H Method for manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1662821A (en) * 2002-08-07 2005-08-31 东京毅力科创株式会社 Placing table drive device and probe method
US20060177579A1 (en) * 2002-09-17 2006-08-10 Shin Cheol H Method for manufacturing semiconductor device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104451602A (en) * 2013-09-18 2015-03-25 东京毅力科创株式会社 Substrate processing apparatus and method for processing a substrate
CN104795344A (en) * 2014-01-17 2015-07-22 东京毅力科创株式会社 Vacuum processing apparatus and vacuum processing method
CN104795344B (en) * 2014-01-17 2018-10-12 东京毅力科创株式会社 Vacuum treatment installation and vacuum processing method
CN104805415A (en) * 2014-01-28 2015-07-29 东京毅力科创株式会社 Method for processing a substrate and substrate processing apparatus
CN104805415B (en) * 2014-01-28 2018-06-05 东京毅力科创株式会社 Substrate processing method using same and substrate board treatment
CN105390372A (en) * 2014-09-02 2016-03-09 东京毅力科创株式会社 method of processing a substrate and substrate processing apparatus
CN109306467A (en) * 2017-07-26 2019-02-05 上海新昇半导体科技有限公司 Epitaxially growing equipment and method of vapor-phase growing
CN109306468A (en) * 2017-07-26 2019-02-05 上海新昇半导体科技有限公司 Susceptor, epitaxially growing equipment and method of vapor-phase growing
CN109306468B (en) * 2017-07-26 2020-10-16 上海新昇半导体科技有限公司 Susceptor, vapor phase growth apparatus, and vapor phase growth method
CN109306467B (en) * 2017-07-26 2020-10-16 上海新昇半导体科技有限公司 Vapor phase growth apparatus and vapor phase growth method
CN110468389A (en) * 2018-05-10 2019-11-19 三星电子株式会社 Depositing device
CN110468389B (en) * 2018-05-10 2023-08-25 三星电子株式会社 Deposition apparatus
CN112740367A (en) * 2018-09-27 2021-04-30 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
CN114908333A (en) * 2021-02-08 2022-08-16 株式会社奈瑟斯比 Roll-to-roll atomic layer deposition apparatus
CN114908333B (en) * 2021-02-08 2024-05-28 株式会社奈瑟斯比 Roller-to-roller atomic layer deposition device

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Application publication date: 20100310