JP2007317770A - Vapor phase growth device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor phase growth device which improves film formation quality by making vapor phase reaction which contributes greatly to the film formation quality so as to be carried out under more uniform conditions in more wide range. <P>SOLUTION: The lateral vapor phase growth device grows up film formation raw material components on a substrate to be treated, in such a way that two or more raw material gas and inert gases which contain film formation raw material components are dissociated respectively by a divider and introduced into a reaction tube, and made to mix in the vicinity of the substrate to be treated which is installed inside the reaction tube. While performing chemical reaction by heating the mixed raw material gas, the gas is made to flow in the direction along the surface where the film formation of the substrate to be treated is carried out. Furthermore, in the end of the above divider by the side of the substrate to be treated, the vapor phase growth device is provided with one or a plurality of penetration aperture for mixing the raw gases in both the regions separated by the divider. One or a plurality of divider with the penetration aperture is arranged in each reaction tube. The end of the divider provided with the penetration aperture is preferably located at the upper stream side rather than the substrate to be treated. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a vapor phase growth apparatus capable of improving film formation quality by vapor phase growth.

As a method for manufacturing a semiconductor device such as a light emitting diode (LED) or a semiconductor laser, a group III organometallic gas such as trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI), ammonia (NH ₃ ), phosphine, A metal organic chemical vapor deposition method (abbreviated as MOCVD method) that forms a compound semiconductor thin film using a hydrogen compound such as arsine and silane as a raw material is used. In the MOCVD method, the aforementioned raw materials are introduced into a reaction furnace, mixed, and subjected to a thermochemical reaction on the substrate to be processed to form a thin film on the substrate to be processed. As one of thin film growth apparatuses using the MOCVD method, there is a horizontal MOCVD apparatus. A horizontal MOCVD apparatus introduces a raw material in a horizontal direction to a substrate to be processed placed in a reaction tube through which a raw material gas flows, and causes reaction and film formation on the substrate to be processed. Accordingly, since the flow of the source gas becomes a laminar flow along the surface on which the substrate to be processed is formed, the horizontal MOCVD apparatus is generally widely used (see Patent Document 1).

  FIG. 10 is a cross-sectional view illustrating a configuration around a reaction furnace of a conventional typical horizontal MOCVD apparatus. In the conventional horizontal MOCVD apparatus 1, a cylindrical reaction tube 3 is provided in a reaction furnace 2. The reaction tube 3 is open at one end facing the outside of the reaction furnace 2 and constitutes gas introduction ports 4 and 5 for introducing a raw material gas containing a film forming raw material component into the reaction tube 3, and the other end is A gas discharge port 6 is formed which opens to the outside of the reaction furnace 2 and discharges a raw material gas containing a film forming raw material component out of the reaction tube 3. A susceptor 8 on which the substrate 7 to be processed is placed is provided at a substantially central portion in the longitudinal direction of the reaction tube 3.

  A heater 9 for heating the substrate 7 to be processed is provided below the susceptor 8. When the film is formed on the surface of the substrate 7 to be processed, the source gas is introduced into the reaction tube 3 in the direction indicated by the arrow 10 from the gas inlets 4 and 5 and is processed by the heater 9 provided below the susceptor 8. The substrate 7 is heated to promote a film forming chemical reaction and form a thin film on the substrate 7 to be processed. The raw material gas used for forming the thin film and passing over the substrate 7 to be processed is discharged from the gas discharge port 6 in the direction of the arrow 10. In order to improve the uniformity of the thin film, a substrate rotating mechanism 11 is installed, and the thin film is formed while rotating the substrate.

In such a conventional horizontal MOCVD apparatus 1, the source gas introduced into the reaction tube 3 during film formation as described above is heated around the substrate 7 by the heater 9 and the substrate 7 to be processed. The temperature is indirectly increased by the susceptor 8 and a thermochemical reaction is promoted in the gas phase, whereby a thin film is formed on the substrate 7 to be processed. Control of the thermochemical reaction of the source gas in the gas phase, that is, the gas phase reaction, is important for improving the film quality, but the gas phase reaction varies depending on the combination of the source gases, and is suppressed for improving the film quality Some things have to be done. For example TMG, the case of forming a GaN film from two kinds of raw gases NH _3, in order to shorten the time to flow in a mixed state, the substrate to the vicinity of the gas inlet 4 not mix TMG and NH ₃ are No. 5 proposes a method of separately supplying them separately to suppress a reaction that occurs in advance (Patent Document 2).

  In order to improve the mass productivity while following the concept of these horizontal MOCVD apparatuses, for example, a method of arranging a plurality of substrates or using a substrate having a larger diameter has been proposed.

  Thus, in order to improve film formation quality, the issue is how to control the chemical reaction at the gas phase and the surface of the substrate to be processed, that is, how to control the concentration, temperature, and reaction time of the material that controls the chemical reaction. In such a phenomenon that changes depending on the place and time, it is necessary to realize high-quality and uniform film formation over the entire desired substrate to be processed.

  However, when the two source gases are separated and supplied as in the above-mentioned Patent Document 2, the reaction time from mixing to being transported to the substrate to be processed can be shortened. Since the gas is heated and the reaction proceeds, uniform film formation in the flow direction cannot be obtained. For example, it is difficult to obtain a uniform result even within the surface of a substrate to be processed of 2 inches, and it becomes a more serious problem in a mass production type horizontal MOCVD apparatus capable of processing a plurality of substrates at a time.

Here, the flow of the source gas in the conventional vapor phase growth apparatus will be described with reference to FIG. An example is a case where an organic metal source such as TMA is introduced from the upper region separated by the partition plate 25 and NH ₃ is introduced from the lower region. First, an unreacted state 51 of TMA which is not in contact with NH ₃ is mixed with NH ₃ become reactive initial state 52 the reaction starts. While being heated, the optimum reaction state 53 optimum for growth is obtained. When the reaction proceeds further by heating, the state transitions to an overreaction state 54 that cannot contribute to crystal growth. In the example of FIG. 11, the overreacted state 54 in which the gas phase reaction has progressed too much contacts the substrate to be processed 26 on the downstream side of the substrate to be processed, so that a desired mixed crystal film cannot be obtained.

  As shown in FIG. 11, for example, in TMA, the optimum reaction state 53 optimum for crystal growth is very short in the flow direction, and it is difficult to realize high quality crystal growth over the entire substrate 26 to be processed. In order to avoid this, growth is generally performed at a higher flow rate, but it is difficult to obtain a sufficient flow rate at a realistic flow rate at atmospheric pressure growth, and crystallinity deteriorates when the flow rate is reduced at reduced pressure growth. It has not yet reached a fundamental solution.

  Also, for example, TMA is supplied as the Al source and TMG is supplied as the Ga source in the same manner when using three or more source gases to grow a mixed crystal film of three or more elements such as an AlGaN film. If this is the case, it is very difficult to obtain a uniform composition ratio between the upstream side and the downstream side of the region to be processed, such as the substrate to be processed, due to differences in individual diffusion rates and reactivity. For example, a raw material gas having a strong gas phase reaction such as TMA may be seen as a case where the reaction proceeds too much on the upstream side and does not grow as a film on the downstream side.

In order to ensure mass productivity while avoiding these problems, instead of a horizontal MOCVD apparatus, for example, Patent Document 3 arranges substrates to be processed in a circle, introduces a source gas from the center of the circle, and supplies it radially. Much research has been done. However, with this method, in order to secure the flow velocity near the substrate to be processed, it is necessary to earn a considerable flow velocity at the center of the circle, so it is difficult to stably flow the required flow rate under normal pressure conditions. is there. Further, since the source gas flows radially, the cross-sectional area of the flow path increases in proportion to the radius, that is, the flow velocity decreases in inverse proportion to the radius, so that it is difficult to grow a uniform film in the flow direction.
JP 2001-185488 A JP-A-8-139034 JP 2001-220288 A

  For the above reasons, it is difficult to efficiently control the gas phase reaction over the entire surface of the substrate to be processed or over a wide range with the methods proposed so far. An object of the present invention is to provide an apparatus in which film forming quality is improved by making the gas phase reaction that greatly contributes to film forming quality a more uniform condition over a wider range.

  The present invention separates a plurality of source gases and inert gas containing film forming source components by a partition plate, introduces them into a reaction tube, and mixes and mixes them in the vicinity of the substrate to be processed installed inside the reaction tube. In a horizontal type vapor phase growth apparatus for growing a film forming raw material component on a substrate to be processed by flowing in a direction along a film formation surface of the substrate to be processed while chemically reacting by heating the source gas, The present invention relates to a vapor phase growth apparatus characterized in that one or a plurality of through-holes for mixing source gases in both regions separated by a partition plate are arranged at the end portion of the partition plate on the substrate to be processed side. . In the vapor phase growth apparatus of the present invention, it is preferable that one or two or more partition plates provided with through holes are arranged in the reaction tube.

  Further, in the vapor phase growth apparatus of the present invention, it is preferable that the end of the partition plate provided with the through hole is located upstream of the substrate to be processed, and from the start position of the through hole to the end of the partition plate. The distance is preferably not more than the distance from the upstream end to the downstream end of the substrate to be processed.

  Further, the vapor phase growth apparatus of the present invention introduces a raw material gas containing nitrogen molecules and a raw material gas containing an organometallic compound consisting of a group III element from the side adjacent to the substrate to be processed from a gas inlet port separated by a partition plate. It is preferable to manufacture a group III nitride semiconductor.

  Further, the vapor phase growth apparatus of the present invention comprises a source gas containing nitrogen molecules, a source gas containing an organometallic compound consisting of a group III element from the side adjacent to the substrate to be processed from a gas inlet port separated by a partition plate, It is preferable to manufacture a ternary group III nitride semiconductor by supplying a source gas containing an organometallic compound composed of a group III element having a strong gas phase reaction.

  In the vapor phase growth apparatus of the present invention, it is preferable that the inert gas is introduced from a gas inlet that is farthest from the substrate to be processed.

  In the vapor phase growth apparatus of the present invention, the raw material gas before the reaction is separated into several by a plurality of partition plates, introduced into a reaction tube, and gradually diffused from a through-hole provided in the partition plate in the vicinity of the substrate to be processed. By mixing in stages, the film formation quality on the substrate to be processed can be improved. Moreover, the enlargement of the filmable area can also be achieved.

<Basic form of vapor phase growth apparatus>
FIG. 1 is a cross-sectional view seen from the side, showing a simplified configuration of the vapor phase growth apparatus of the present invention. The basic form of the vapor phase growth apparatus of the present invention will be described below with reference to FIG. The vapor phase growth apparatus 21 generally includes a reaction furnace 22, a reaction tube 23 made of, for example, quartz, a susceptor 33 on which a substrate to be processed 26 is placed, a susceptor 33, a substrate rotation mechanism 31, and a susceptor 33. An RF coil 32 for heating is provided. The source gas used for the vapor phase growth is supplied into the reaction tube 23 from the gas inlets 35A, 35B, and 35C, and the inert gas is supplied from the inert gas inlet 34, respectively. Each gas inlet is separated by the partition plate 25, and the separated source gases are not mixed at the gas inlet. Further, in FIG. 1, three gas inlets for the source gas are shown, but the number of gas inlets may be two or more, and the number is not particularly limited. The partition plate 25 that separates different kinds of source gases has one or a plurality of through-holes 28 at the end portion. The through hole 28 does not need to be formed in the partition plate 25 that separates the inert gas and the source gas.

  The source gas is heated by the heated susceptor 33 and the reaction tube 23 and the substrate 26 to be processed around the susceptor 33, and a film is formed on the substrate 26 through a gas phase reaction. The source gas and the inert gas that have not been used for film formation are discharged from the gas discharge port 38.

  The vapor phase growth apparatus 21 can be used, for example, as a semiconductor processing apparatus used for performing a thin film forming process on a semiconductor substrate. Although FIG. 1 shows an example in which the susceptor is induction-heated by the RF coil 32, it is possible to heat the susceptor 33 and the substrate 26 by placing a resistance heater or the like under or around the susceptor 33. Yes, the heating means is not particularly limited. The substrate rotation mechanism 31 is preferably provided.

  The reaction furnace 22 is a casing having a rectangular parallelepiped shape, and is formed by lining a refractory or the like on a metal shell, for example. Reaction tubes 23 are attached to opposite side surfaces of the reaction furnace 22 at both ends in the left-right direction in the figure. The reaction tube 23 has a cylindrical or substantially rectangular tube shape, and a heat-resistant material, for example, a ceramic such as quartz, boron nitride or silicon carbide, or a metal such as molybdenum is used. The susceptor 33 has a substantially circular shape when the substrate rotation mechanism 31 is provided, but is not limited thereto when the substrate rotation mechanism 31 is not provided. As for the susceptor 33, when an induction heating method using the RF coil 32 is used, a dielectric material such as carbon is used. However, when the resistance heating method is used as described above, a material having heat resistance, for example, quartz or boronite. Ceramics such as ride and silicon carbide, and metals such as molybdenum are also used. A gas supply source such as a high-pressure gas cylinder, a pressure / flow rate adjusting valve connected to the gas supply source, and a gas supply source are connected to the inert gas inlet 34 of the reaction tube 23 and the gas inlets 35A, 35B, and 35C of the source gas. The source gas and the inert gas are supplied by a gas supply unit configured to include a gas supply line connected to the reaction tube 23. The gas supply unit is not illustrated.

  Further, the partition plate 25 having the through-hole 28 is heated by the heat of the heated substrate to be processed 26, the susceptor 33, etc., and is prevented from adhering impurities derived from the source gas. Is also arranged upstream. Further, an inert gas is introduced from the inert gas introduction port 34 of FIG. 1, but this is introduced in order to make it difficult for impurities to adhere to the reaction tube 23 facing the substrate. By making the impurities difficult to adhere to the reaction tube 23 and the partition plate 25, the flow of the source gas is disturbed, the chemical reaction of the impurities with the source gas, the falling of the attached impurities due to the enlargement of the impurities, and the like occur. It can avoid adversely affecting growth.

  Further, the distance from the start position of the through hole 28 to the end of the partition plate does not need to be longer than the length of the substrate to be processed. This is because if the area for forming the through hole 28 is too large, the source gas diffuses more than necessary, and thus it is necessary to prevent the source gas from being consumed unnecessarily.

<Raw gas>
The source gas is not particularly limited as long as it is a gas generally used for MOCVD, but it is preferable to use a source gas containing an organometallic compound composed of a group III element and nitrogen molecules. Examples of organometallic compounds composed of Group III elements include trimethylaluminum (TMA), trimethylgallium (TMG), trimethylindium, triethylaluminum, triethylgallium, and triethylindium. Examples of the source gas containing nitrogen molecules include ammonia (NH ₃ ), trimethylamine, monomethylhydrazine, dimethylhydrazine, phosphine, arsine, and silane. In the vapor phase growth apparatus of the present invention, trimethylaluminum (TMA) and trimethylgallium (TMG) are used for an organometallic compound composed of a group III element, and ammonia (NH ₃ ) is used for a source gas containing nitrogen molecules. It is preferably used for manufacturing a ternary film formation.

<Vapor phase growth equipment>
Hereinafter, a film forming procedure on the substrate 26 to be processed will be described with reference to FIG. First, the source gas is introduced into the reaction tube 23 from the gas inlets 35A, 35B, and 35C. The introduced source gas is initially separated and supplied by the partition plate 25. First, the raw material gas supplied from the gas inlet 35B and the gas inlet 35C starts to be mixed from the through-hole 28 of the partition plate 25 and is completely mixed from the end of the partition plate 25. Similarly, the raw material gas supplied from the gas introduction port 35A further begins to be mixed from the through port 28 at a position near the substrate to be processed, and is completely mixed from the end of the partition plate 25. Since the gas introduced from the inert gas inlet 34 is separated into the partition plate 25 without the through port 28, the gas is mixed from the end of the partition plate 25.

  The source gas is heated by the radiant heat and heat conduction radiated through the susceptor 33 heated to 400 to 1400 ° C. by the RF coil 32 and the reaction tube 23 heated by the susceptor 33, and the gas phase reaction proceeds. The film reaches the vicinity of the substrate 26 and undergoes a surface reaction to form a film. In addition, although an inert gas is introduce | transduced from the inert gas inlet 34 of FIG. 1, it is not necessary to mix in steps by the partition plate provided with a through-hole.

Here, FIG. 2 shows a detailed view for explaining the flow of the source gas in the vapor phase growth apparatus of the present invention. Further, it is assumed that NH ₃ is used as a source gas containing nitrogen molecules, and TMA is used as an organometallic compound. At this time, when NH ₃ is introduced at a flow rate of 1 to 200 cm / sec from the lower region separated by the partition plate 25 having the through-hole 28 in FIG. 2, and TMA is introduced from the upper region at a flow rate of 1 to 200 cm / sec. To do. First, an unreacted state 51 of TMA which is not in contact with NH ₃ is mixed with NH ₃ begins reaction, the reaction initial state 52. While being heated, the optimum reaction state 53 that is optimum for crystal growth is reached. However, when further heated over time, the vapor phase reaction proceeds and the state transitions to an overreaction state 54 that cannot contribute to crystal growth.

  In FIG. 2, the source gas diffused downward from the most upstream through-hole is in an optimum reaction state 53 optimum for crystal growth on the upstream side of the substrate to be processed, but when it reaches the downstream side of the substrate 26 to be processed, All of the reactions have progressed to the overreaction state 54. However, in contrast to this, as shown in the detailed view for explaining the flow of the source gas in the vapor phase growth apparatus of the present invention shown in FIG. The optimum reaction state 26 that is optimal for crystal growth finally reaches the downstream side of the processing substrate 26, and the film is formed on the downstream side of the processing substrate 26.

  That is, since a time difference is provided in the mixing by the through hole 28 of the partition plate 25, the mixing is performed for the first time from the end of the partition plate 25 with the raw material gas mixed from the most upstream through port 28 and progressing in the gas phase reaction. There is a source gas that starts a gas phase reaction, and the source gas mixed from the most upstream diffuses toward the substrate to be processed 26 in the downward direction and undergoes an optimum gas phase reaction on the most upstream side of the substrate to be processed 26. The source gas mixed at the most downstream side is formed under optimum conditions on the most downstream side of the substrate to be processed.

  The distance for the source gas separated by the partition plate 25 having the through-hole 28 to reach the surface of the substrate 26 to be processed in the optimum chemical reaction state, the form of the through-hole 28 is the type of the source gas used, the source gas Since it also changes depending on the flow rate of growth, the conditions are examined by changing the conditions and conducting growth experiments.

Here, since the optimum gas phase reaction and the diffusion rate of TMA and TMG, for example, differ depending on the raw material gas used as described above, if a time difference is supplied through the through-hole of the partition plate 25 in a separated state, mixing of AlGaN or the like will occur. The crystal film can be uniformly formed over a wide range. For example, a gas containing a gas phase reaction such as TMA from the gas inlet 35A shown in FIG. 1, a gas containing a gas phase reaction such as TMG from the gas inlet 35B, and a gas containing TMG from the gas inlet 35C. For example, NH ₃ gas containing nitrogen molecules is introduced. Each of them is separated and supplied by the partition plate 25, but when reaching the through-hole 28 provided in the partition plate 25, the mixture begins to be gradually mixed from the through-hole 28 by diffusion. Since the source gases are mixed stepwise, the AlGaN mixture in an optimal reaction state can come into contact with the entire surface of the substrate 26 to be processed, so that a uniform and high quality mixed crystal film made of AlGaN can be formed. it can.

  The above description of the flow of the source gas is for one substrate, but the same effect can be expected for the simultaneous growth of a plurality of substrates.

  As described above, by using the vapor phase growth apparatus of the present invention to shift the mixing timing of the raw material gas, it is possible to secure a long region where the raw material is in an optimal vapor state, and to provide a high quality over the entire substrate 26 to be processed. Crystal growth is possible.

<Through hole>
FIGS. 4 to 9 show the shape of the through hole of the partition plate, and an example of an embodiment of a mechanism that performs mixing of source gases in stages is given. First, Fig.4 (a) shows the top view of one form of a partition plate, FIG.4 (b) shows sectional drawing of the partition plate in an IV-IV direction. The partition plate 25 is a system in which a plurality of holes are formed as the through holes 28, and the diameter of the holes is preferably 0.5 to 5 mm in consideration of flow and diffusion. When the diameter of the hole is less than 0.5 mm, the diffusion of the raw material gas becomes insufficient, the raw material gases are hardly mixed with each other, and there is a tendency that a uniform film is not easily formed. In the case of 5 mm or more, since the diffusion of the source gas occurs excessively upstream of the substrate to be processed, the source gases are hardly mixed step by step, and there is a tendency that a uniform film is not easily formed.

  Fig.5 (a) shows the top view of one form of a partition plate, FIG.5 (b) shows sectional drawing of the partition plate in a VV direction. This partition plate 25 is a system in which a slit is formed as a through-hole 28 in a direction perpendicular to the flow of the raw material gas, and the slit width is preferably 0.5 to 5 mm. When the width of the slit is less than 0.5 mm, the diffusion of the raw material gas becomes insufficient, the raw material gases are hardly mixed with each other, and there is a tendency that a uniform film is not easily formed. In the case of 5 mm or more, since the diffusion of the source gas occurs excessively upstream of the substrate to be processed, the source gases are hardly mixed step by step, and there is a tendency that a uniform film is not easily formed.

  6A shows a plan view of one embodiment of the partition plate, and FIG. 6B shows a cross-sectional view of the partition plate in the VI-VI direction. The partition plate 25 is a system in which a slit is formed parallel to the flow direction as the through-hole 28, and the slit width is preferably 0.5 to 5 mm. When the width of the slit is less than 0.5 mm, the diffusion of the raw material gas becomes insufficient, the raw material gases are hardly mixed with each other, and there is a tendency that a uniform film is not easily formed. In the case of 5 mm or more, since the diffusion of the source gas occurs excessively upstream of the substrate to be processed, the source gases are hardly mixed step by step, and there is a tendency that a uniform film is not easily formed.

  FIG. 7 shows a cross-sectional view of one embodiment of the partition plate, and the turbulence of the flow of the source gas is suppressed by inclining the through hole 28 in the partition plate 25 in the gas flow direction, not perpendicular to the plane of the partition plate 25. This is a method of mixing. The inclination is preferably 30 to 90 degrees with respect to the partition plate. This is because of processing accuracy. FIG. 8 shows a cross-sectional view of one embodiment of the partition plate, and the through hole 28 of the partition plate 25 is formed by stacking a plurality of source gas guide plates 29 in the height direction and continuously changing the terminal position thereof. This is the method. At this time, the width of the through hole 28 is preferably 0.5 to 3 mm.

  FIG. 9 shows a cross-sectional view of one embodiment of the partition plate. By bringing the partition plate 25 into intimate contact with the partition plate 25 or the reaction tube wall located on the partition plate 25, the raw material gas to be mixed by moving straight to the partition plate ignoring the through port 28 is eliminated. The amount of the raw material gas mixed can be increased.

  In this way, not all the raw material gases are mixed at once, but the mixing of the raw material gases is suppressed by sandwiching obstacles in stages, and by providing a time difference, it is possible to enlarge the high quality growth possible region. . 4 to 9 are only examples, and there is no problem if the holes are not circular, oval, rectangular, or mesh-like, and if the gas can be mixed at a time and a time difference can be given. The effects of the present invention can be obtained.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The film formation quality on the substrate to be processed can be improved, and an increase in the filmable area can be achieved.

It is sectional drawing seen from the side which simplifies and shows the structure around the reaction furnace of the vapor phase growth apparatus which is embodiment of this invention. It is a conceptual diagram which shows the flow of the source gas to the board | substrate from the partition plate of the vapor phase growth apparatus explaining the effect of this invention. It is a conceptual diagram which shows the flow of the source gas to the board | substrate from the partition plate of the vapor phase growth apparatus explaining the effect of this invention. (A) is the simplified top view of one form of the partition plate and through-hole of the vapor phase growth measure of this invention, (b) is sectional drawing of the IV-IV direction of (a). (A) is the simplified top view of one form of the partition plate and through-hole of the vapor phase growth measure of this invention, (b) is sectional drawing of the VV direction of (a). (A) is the simplified top view of one form of the partition plate and through-hole of the vapor phase growth measure of this invention, (b) is sectional drawing of the VI-VI direction of (a). It is simplified sectional drawing of one form of the partition plate and through-hole of the vapor phase growth means of this invention. It is simplified sectional drawing of one form of the partition plate and through-hole of the vapor phase growth means of this invention. It is simplified sectional drawing of one form of the partition plate and through-hole of the vapor phase growth means of this invention. It is the simplified sectional view showing the conventional vapor phase growth apparatus. It is a conceptual diagram which shows the flow of the source gas in the conventional vapor phase growth apparatus.

Explanation of symbols

  1 horizontal MOCVD apparatus, 2,22 reactor, 3,23 reaction tube, 4,5 gas inlet, 6,38 gas outlet, 7,26 substrate to be processed, 8,33 susceptor, 9 heater, 10 arrow, 11, 31 Substrate rotating mechanism, 21 Vapor growth apparatus, 25 Partition plate, 28 Through port, 29 Induction plate, 32 RF coil, 34 Inert gas inlet, 35A, 35B, 35C Gas inlet, 51 Unreacted state, 52 Initial reaction state, 53 optimum reaction state, 54 overreaction state.

Claims (7)

A plurality of source gases and inert gases containing film forming source components are separated by a partition plate, introduced into a reaction tube, mixed in the vicinity of a substrate to be processed installed inside the reaction tube, and the mixed source gas is mixed. In a horizontal type vapor phase growth apparatus in which a film forming raw material component is grown on a substrate to be processed by flowing in a direction along a film formation surface of the substrate to be processed while being chemically reacted by heating,
A vapor phase growth apparatus characterized in that one or a plurality of through-holes for mixing source gases in both regions separated by a partition plate are arranged at the end portion of the partition plate on the substrate to be processed side.   2. The vapor phase growth apparatus according to claim 1, wherein one or two or more partition plates each having the through-hole are disposed in a reaction tube.   2. The vapor phase growth apparatus according to claim 1, wherein an end of the partition plate provided with the through hole is located upstream of the substrate to be processed.   2. The vapor phase growth apparatus according to claim 1, wherein the distance from the start position of the through hole to the end of the partition plate is equal to or less than the distance from the upstream end to the downstream end of the substrate to be processed.   A group III nitride semiconductor is manufactured by introducing a source gas containing nitrogen molecules and a source gas containing an organometallic compound consisting of a group III element from a gas inlet port separated by a partition plate from the side adjacent to the substrate to be processed. The vapor phase growth apparatus according to claim 1.   Source gas containing nitrogen molecules, source gas containing organometallic compounds consisting of group III elements, and organic consisting of group III elements with intense gas phase reaction from the gas inlet port separated by the partition plate from the side adjacent to the substrate to be processed 6. The vapor phase growth apparatus according to claim 5, wherein a source gas containing a metal compound is supplied to manufacture a ternary group III nitride semiconductor.   2. The vapor phase growth apparatus according to claim 1, wherein the inert gas is introduced from a gas introduction port that is farthest from the substrate to be processed.

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