CN102714181A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN102714181A
CN102714181A CN2010800555749A CN201080055574A CN102714181A CN 102714181 A CN102714181 A CN 102714181A CN 2010800555749 A CN2010800555749 A CN 2010800555749A CN 201080055574 A CN201080055574 A CN 201080055574A CN 102714181 A CN102714181 A CN 102714181A
Authority
CN
China
Prior art keywords
diffusion layer
memory cell
driving transistors
semiconductor layers
4nmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800555749A
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English (en)
Chinese (zh)
Inventor
舛冈富士雄
中村広记
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisantis Electronics Singapore Pte Ltd
Original Assignee
Unisantis Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Singapore Pte Ltd filed Critical Unisantis Electronics Singapore Pte Ltd
Publication of CN102714181A publication Critical patent/CN102714181A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2010800555749A 2010-12-07 2010-12-07 半导体器件 Pending CN102714181A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/071885 WO2012077178A1 (ja) 2010-12-07 2010-12-07 半導体装置

Publications (1)

Publication Number Publication Date
CN102714181A true CN102714181A (zh) 2012-10-03

Family

ID=46206700

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800555749A Pending CN102714181A (zh) 2010-12-07 2010-12-07 半导体器件

Country Status (5)

Country Link
JP (1) JP5432379B2 (ja)
KR (1) KR20130020761A (ja)
CN (1) CN102714181A (ja)
TW (1) TW201230304A (ja)
WO (1) WO2012077178A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015019444A1 (ja) 2013-08-07 2015-02-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
US10424663B2 (en) * 2017-05-23 2019-09-24 International Business Machines Corporation Super long channel device within VFET architecture
JP6328832B2 (ja) * 2017-07-05 2018-05-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
CN111344841B (zh) 2017-11-01 2023-07-04 新加坡优尼山帝斯电子私人有限公司 柱状半导体装置、及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070189060A1 (en) * 2006-01-25 2007-08-16 Kabushiki Kaisha Toshiba Semiconductor memory
US20100219483A1 (en) * 2008-01-29 2010-09-02 Fujio Masuoka Semiconductor storage device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148582A (ja) * 1994-11-21 1996-06-07 Sanyo Electric Co Ltd 半導体メモリセルとその製造方法
JP4006566B2 (ja) * 2001-02-07 2007-11-14 セイコーエプソン株式会社 半導体装置、メモリシステムおよび電子機器
WO2009095998A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070189060A1 (en) * 2006-01-25 2007-08-16 Kabushiki Kaisha Toshiba Semiconductor memory
US20100219483A1 (en) * 2008-01-29 2010-09-02 Fujio Masuoka Semiconductor storage device

Also Published As

Publication number Publication date
WO2012077178A1 (ja) 2012-06-14
JPWO2012077178A1 (ja) 2014-05-19
TW201230304A (en) 2012-07-16
KR20130020761A (ko) 2013-02-28
JP5432379B2 (ja) 2014-03-05

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20121003