CN102696118A - 对碲化镉光伏器件进行退火的方法 - Google Patents

对碲化镉光伏器件进行退火的方法 Download PDF

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Publication number
CN102696118A
CN102696118A CN201080046259XA CN201080046259A CN102696118A CN 102696118 A CN102696118 A CN 102696118A CN 201080046259X A CN201080046259X A CN 201080046259XA CN 201080046259 A CN201080046259 A CN 201080046259A CN 102696118 A CN102696118 A CN 102696118A
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CN
China
Prior art keywords
layer
cadmium
cadmium telluride
transparent conductive
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201080046259XA
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English (en)
Chinese (zh)
Inventor
马克思·格鲁克勒尔
瑞克·C·鲍威尔
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First Solar Inc
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of CN102696118A publication Critical patent/CN102696118A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN201080046259XA 2009-10-13 2010-10-12 对碲化镉光伏器件进行退火的方法 Pending CN102696118A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25110809P 2009-10-13 2009-10-13
US61/251,108 2009-10-13
PCT/US2010/052318 WO2011046930A1 (en) 2009-10-13 2010-10-12 Method of annealing cadmium telluride photovoltaic device

Publications (1)

Publication Number Publication Date
CN102696118A true CN102696118A (zh) 2012-09-26

Family

ID=43876476

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080046259XA Pending CN102696118A (zh) 2009-10-13 2010-10-12 对碲化镉光伏器件进行退火的方法

Country Status (5)

Country Link
US (1) US20110088768A1 (https=)
CN (1) CN102696118A (https=)
IN (1) IN2012DN02992A (https=)
TW (1) TW201121089A (https=)
WO (1) WO2011046930A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112837997A (zh) * 2021-01-06 2021-05-25 河南大学 一种ZnCdS薄膜的制备方法及铜锌锡硫硒太阳电池的制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013074306A1 (en) 2011-11-18 2013-05-23 First Solar, Inc. Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules
US9799784B2 (en) 2013-03-15 2017-10-24 First Solar, Inc. High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture
US9437760B2 (en) 2013-03-15 2016-09-06 First Solar, Inc. Method of reducing semiconductor window layer loss during thin film photovoltaic device fabrication, and resulting device structure
TWI550717B (zh) 2014-08-25 2016-09-21 新能光電科技股份有限公司 熱處理方法及其所製得之產物
US10453988B2 (en) 2016-06-03 2019-10-22 University Of Utah Research Foundation Methods for creating cadmium telluride (CdTe) and related alloy film
MY206714A (en) * 2018-10-24 2025-01-03 First Solar Inc Buffer layers for photovoltaic devices with group v doping

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4828875A (en) * 1987-09-25 1989-05-09 Korea Advanced Institute Of Science & Tech. Process for the production of sintered films of Cd1-x Znx S
US4950615A (en) * 1989-02-06 1990-08-21 International Solar Electric Technology, Inc. Method and making group IIB metal - telluride films and solar cells
US5626688A (en) * 1994-12-01 1997-05-06 Siemens Aktiengesellschaft Solar cell with chalcopyrite absorber layer
US5916375A (en) * 1995-12-07 1999-06-29 Japan Energy Corporation Method of producing photoelectric conversion device
CN1197172C (zh) * 2000-10-18 2005-04-13 松下电器产业株式会社 太阳能电池

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423565B1 (en) * 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
AU2002259152A1 (en) * 2001-05-08 2002-11-18 Bp Corporation North America Inc. Improved photovoltaic device
EP2257986A4 (en) * 2008-03-04 2012-06-13 Solexant Corp PROCESS FOR THE MANUFACTURE OF SOLAR CELLS
CA2716687A1 (en) * 2008-03-18 2009-09-24 Charlie Hotz Improved back contact in thin film solar cells
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
US8084682B2 (en) * 2009-01-21 2011-12-27 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4828875A (en) * 1987-09-25 1989-05-09 Korea Advanced Institute Of Science & Tech. Process for the production of sintered films of Cd1-x Znx S
US4950615A (en) * 1989-02-06 1990-08-21 International Solar Electric Technology, Inc. Method and making group IIB metal - telluride films and solar cells
US5626688A (en) * 1994-12-01 1997-05-06 Siemens Aktiengesellschaft Solar cell with chalcopyrite absorber layer
US5916375A (en) * 1995-12-07 1999-06-29 Japan Energy Corporation Method of producing photoelectric conversion device
CN1197172C (zh) * 2000-10-18 2005-04-13 松下电器产业株式会社 太阳能电池

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112837997A (zh) * 2021-01-06 2021-05-25 河南大学 一种ZnCdS薄膜的制备方法及铜锌锡硫硒太阳电池的制备方法

Also Published As

Publication number Publication date
US20110088768A1 (en) 2011-04-21
WO2011046930A1 (en) 2011-04-21
IN2012DN02992A (https=) 2015-07-31
TW201121089A (en) 2011-06-16

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Application publication date: 20120926