CN102694035A - Extra-high-voltage and large-power light-operated thyristor element casing - Google Patents
Extra-high-voltage and large-power light-operated thyristor element casing Download PDFInfo
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- CN102694035A CN102694035A CN2012101965012A CN201210196501A CN102694035A CN 102694035 A CN102694035 A CN 102694035A CN 2012101965012 A CN2012101965012 A CN 2012101965012A CN 201210196501 A CN201210196501 A CN 201210196501A CN 102694035 A CN102694035 A CN 102694035A
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Abstract
The invention provides an extra-high-voltage and large-power light-operated thyristor element casing. The extra-high-voltage and large-power light-operated thyristor element casing comprises an anode pipe seat and a cathode pipe cover which is correspondingly matched with the anode pipe seat, wherein the cathode pipe cover can stretch into the anode pipe seat and is concentrically with the anode pipe seat; the anode pipe seat comprises an anode electrode, an anode stress ring, an anode ceramic ring and an anode flange, which are concentrically sealed; the anode stress ring is sealed at the outer edge of the anode electrode; the cathode pipe cover comprises a cathode electrode and a cathode flange which is concentrically sealed at the outer edge of the cathode electrode; the cathode electrode is internally provided with a cathode window module for light triggering; the cathode window module and the cathode electrode are concentrically arranged; a chip fixing ring is concentrically sealed at the end part of the anode electrode and the chip fixing ring is located in the anode ceramic ring; and the cathode window module is located right above the chip fixing ring. The extra-high-voltage and large-power light-operated thyristor element casing has a compact structure, improves the explosion-proof performance, has convenience for installation and use and good heat radiation effect, and is stable and reliable.
Description
Technical field
The present invention relates to a kind of thyristor element shell; Especially a kind of extra-high voltage high-power photo thyristor element shell; Specifically a kind of 6 inches extra-high voltage high-power photo thyristor element shells are applied to extra-high voltage direct-current transmission, belong to the technical field of power electronics.
Background technology
At present, all high voltage direct current transmission project all adopts the thyristor of high voltage, big electric current.In order to adapt to the situation of Chinese national economy develop rapidly; Along with the Eleventh Five-Year Plan period ± 800KV extra-high voltage direct-current transmission demonstration project is through the national grid acceptance of work; Country will give priority to the extra-high voltage direct-current transmission technology in the coming five years; Cooperate southwestern water power, North China, northwest coal electricity and the exploitation of wind-powered electricity generation base, build 11 extra-high voltage direct-current transmission engineerings such as silk screen-Jiangsu.The five-year, the investment amount of ultra high voltage are expected to reach 2,700 hundred million yuan.
China is in the flexible DC power transmission technical field commanding elevation that power electronic technology is used in occupation of the world today.Photo thyristor (LTT) as a kind of power semiconductor be before more than 20 years, grew up and be applied to the direct current transportation application; Its principle is to utilize the thyristor of the illumination signal triggering conducting of certain wavelength, and high-power light-operated triggering signal is to realize through the semiconductor laser on the optical cable.Triggering the thyristor dc transmission of electricity with the employing traditional electrical compares; Its system response speed is fast, controllability is better, operational mode is flexible; Can greatly reduce system short-circuit than conventional direct current transportation; Can also be to solve large area region to have a power failure, realize the remote isolated effective way of sending electricity to passive mains supply.
At present; The Westinghouse Electric of the U.S., GE company and ABB AB have the history that small dimension photo thyristor (LTT) is succeeded in developing and are applied to HVDC (extra-high voltage direct-current transmission); The above extra-high voltage direct-current transmission of ± 800KV needs 6 inches photo thyristors; And 6 inches extra-high voltage high-power photo thyristors are when control high voltage, big electric current; Will certainly especially propose higher requirement at aspects such as air-tightness, stability and explosion-proofs to the manufacturing technology of case of extra-high voltage high-power thyristor component, this is a difficult point of present extra-high voltage high-power photo thyristor element shell.
Summary of the invention
The objective of the invention is to overcome the problem that big specification photo thyristor exists in manufacturing technology, a kind of extra-high voltage high-power photo thyristor element shell is provided, its compact conformation improves explosion-proof performance, and is easy to install, and good heat dissipation effect is reliable and stable.
According to technical scheme provided by the invention, said extra-high voltage high-power photo thyristor element shell comprises that the anode base reaches and the cathode tube lid of said anode base corresponding matching; Said cathode tube lid can stretch in the anode base, and distributes with the anode base is concentric; Said anode base comprises anode electrode, anode NOL ring, anode porcelain ring and the anode flange of concentric sealing-in, and the sealing-in of anode NOL ring is in the outer rim of anode electrode; Cathode tube lid comprises cathode electrode and the concentric sealing-in cathode flange in said cathode electrode outer rim; Be provided with in the cathode electrode and be used for light-triggered negative electrode window module, said negative electrode window module is provided with cathode electrode is concentric; The end of said anode electrode is sealed with the chip retainer ring with one heart, and said chip retainer ring is positioned at anode porcelain ring; The negative electrode window module be positioned at the chip retainer ring directly over.
Said negative electrode window module comprises the axially extending bore that is positioned on the cathode electrode; Have the groove that is connected with said through hole on the upper surface of cathode electrode; The lower surface of cathode electrode is provided with the counterbore that is connected with through hole, is provided with window porcelain ring in the said counterbore and is positioned at the sapphire on the said window porcelain ring lower surface.
The lower end of said cathode electrode is provided with some steps.
The outer rim of said anode electrode lower end is provided with the anode copper ring of concentric sealing-in, and said anode copper ring contacts with the bottom of anode NOL ring.
The center of said chip retainer ring is provided with first location notch, and the outside of first location notch is provided with second location notch of symmetrical distribution on the chip retainer ring.
Said anode porcelain ring is provided with some bulge loops.Said anode porcelain ring adopts 95% aluminium oxide ceramics.Said window porcelain ring adopts 95% aluminium oxide ceramics.
Said cathode tube lid stretches in the anode base, is provided with thyristor chip between anode electrode and cathode electrode, and said thyristor chip is installed on the end of anode electrode through the chip retainer ring, and thyristor chip is with the negative electrode window module and anode electrode is concentric distributes.
Advantage of the present invention: through window porcelain ring and sapphire are set, realized light-triggered structural requirement on cathode electrode, and the sensitivity higher with respect to the electricity triggering, easier self-shield performance and the forward recovery self-shield (FRP) that realizes overvoltage are provided; On the outer wall of anode porcelain ring, be provided with the multiple tracks bulge loop, increased creepage distance; Anode electrode be provided with the anode copper ring, improved the radiating effect of thyristor; The chip retainer ring is set on anode electrode, fixes and under high-pressure situations, realize protection peripheral anode porcelain ring in order to chip.6 inches extra-high voltage high-power photo thyristor element shells have possessed thyristor at blocking voltage 8500V, the requirement of high-air-tightness, high stability, high reliability under the on-state average current 4500A state.
Description of drawings
Fig. 1 is the structural representation of invention.
Fig. 2 is the structural representation of chip retainer ring of the present invention.
Fig. 3 is the vertical view of Fig. 2.
Fig. 4 is the structural representation of cathode tube lid of the present invention.
Fig. 5 is the partial top view of Fig. 4.
Fig. 6 is the structural representation of anode base of the present invention.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
Like Fig. 1 ~ shown in Figure 6: the present invention includes anode electrode 1, anode NOL ring 2, anode copper ring 3, anode porcelain ring 4, anode flange 5, chip retainer ring 6, cathode electrode 7, cathode flange 8, window porcelain ring 9, sapphire 10, cathode tube lid 11, bulge loop 12, first location notch 13, second location notch 14, through hole 15, groove 16, counterbore 17 and anode base 18 and step 19.
Like Fig. 1, Fig. 4, Fig. 5 and shown in Figure 6: trigger in order to realize light; Photo thyristor element shell of the present invention comprises anode base 18 and covers 11 with the cathode tube of said anode base 18 corresponding matching; Said cathode tube lid 11 can stretch in the anode base 18; When cathode tube lid 11 stretch into be installed on anode base 18 in after, cathode tube covers 11 and the 18 concentric distributions of anode base.
Said anode base 18 comprises anode electrode 1, anode NOL ring 2, anode copper ring 3, anode porcelain ring 4 and the anode flange 5 of concentric distribution and sealing-in; Anode NOL ring 2 is packaged on the outer rim of anode electrode 1 with one heart; Anode porcelain ring 4 is positioned on the anode NOL ring 2, and the end of anode porcelain ring 4 is provided with anode flange 5, and anode copper ring 3 is positioned at the below of anode NOL ring 2; Anode copper ring 3 is packaged on the outer rim of anode electrode 1 with one heart, and anode copper ring 3 contacts with the bottom of anode NOL ring 2.Can improve the radiating effect of thyristor through anode copper ring 3.The outer wall of anode porcelain ring 4 is provided with some bulge loops 12, can increase creepage distance through the multiple tracks bulge loop 12 that is provided with.After above-mentioned the setting, an end end of anode electrode 1 is stretched in the anode porcelain ring 4.
The end that anode electrode 1 stretches in the anode porcelain ring 4 is used to install thyristor chip, and the diameter that is installed on the thyristor chip of anode electrode 1 end in the embodiment of the invention is 6 inches (150mm), can adapt to the blocking-up requirement of high-voltage large current.In order to reduce the explosion hazard that thyristor chip produces when block high voltages, the big electric current; The end of anode electrode 1 of the present invention is provided with chip retainer ring 6; The center of said chip retainer ring 6 is provided with first location notch 13; The both sides of said first location notch 13 are provided with second location notch 14 of symmetrical distribution, make things convenient for chip retainer ring 6 to be installed on the anode electrode 1 through first location notch 13 and second location notch 14, can make things convenient for thyristor chip to be installed on the end of anode electrode 1 simultaneously; As shown in Figures 2 and 3.Chip retainer ring 6 adopts alloy material to process, and the external diameter of chip retainer ring 6 is greater than the external diameter of anode electrode 1 end; Thyristor chip is installed on the end of anode electrode 1 through chip retainer ring 6.When thyristor chip produces explosion time under high voltage, the big function of current; Chip retainer ring 6 can stop fragment anode porcelain ring 4 motions that blast produces; Avoid 4 fragmentations of anode porcelain ring, produce bigger explosion hazard, improve the safety and reliability of whole thyristor.
Cathode tube lid 11 comprises cathode electrode 7, and the outer rim of said cathode electrode 7 is sealed with cathode flange 8 with one heart, and cathode flange 8 is positioned at an end end of cathode electrode 7, and the other end of cathode electrode 7 is provided with the step 19 of some axial distribution.Be provided with the negative electrode window module of concentric distribution in the cathode electrode 7, said negative electrode window module is used for the light triggered thyristor chip.In the embodiment of the invention, the negative electrode window module comprises through hole 15, and the upper surface of said through hole 15 usefulness cathode electrodes 7 is to extending below, and the upper surface of cathode electrode 7 also is provided with the groove 16 that is connected with through hole 15.The lower surface of cathode electrode 7 is provided with the counterbore 17 that is connected with through hole 15, and said counterbore 17, the axis of through hole 15 and the axis of cathode electrode 7 are located along the same line.Be provided with window porcelain ring 9 in the counterbore 17, the lower surface of said negative electrode porcelain ring 9 is provided with sapphire 10, and the axis of window porcelain ring 9 and sapphire 10 and the axis of cathode electrode 7 are located along the same line.Through groove 14 light-dependent control element is installed; Light-dependent control element is generally semiconductor laser; The triggering light that light-dependent control element produces is injected on the window porcelain ring 9 and sapphire 10 of counterbore 17 through through hole 15; Through inciding on the thyristor chip after sapphire 10 refractions,, can satisfy the triggering requirement of thyristor chip through the light after sapphire 10 refractions to trigger the unlatching or the shutoff of thyristor chip.Window porcelain ring 9 and anode porcelain ring 4 adopt 95% aluminium oxide ceramics.
Like Fig. 1 ~ shown in Figure 6: during use; Thyristor chip is installed on the end of anode electrode 1 through chip retainer ring 6; After the thyristor chip installing and locating; Cathode tube is covered the end that 11 correspondences are provided with the negative electrode window module stretch in the anode porcelain ring 4, the cathode flange 8 on the cathode electrode 7 contacts with anode flange 5 on the anode porcelain ring 4, promptly the negative electrode window module be positioned at chip retainer ring 6 directly over.Thyristor chip and anode electrode 1, cathode electrode 7 are in contact, thyristor chip and chip retainer ring 6 and the 18 concentric distributions of anode base.During work, the triggering light that light-dependent control element produces acts on the thyristor chip after reflecting through sapphire 10, to trigger the unlatching or the shutoff of thyristor chip.Chip retainer ring 6 can slow down the detonation power of thyristor chip, avoids 4 fragmentations of anode porcelain ring, improves the safety in utilization of whole shell.
The present invention adopts high-accuracy process technology manufacturing to form.Technical indicator:
Sealing-in air-tightness≤1 * 10
-8Pam
3/ S; Copper electrode flatness≤0.015mm; Window light transmittance>=99.99%; Window sealing strength>=5KN/cm
2Sapphire window stretching resistance>=10Kg.
The present invention has realized light-triggered structural requirement through window porcelain ring 9 and sapphire 10 are set on cathode electrode 7; On the outer wall of anode porcelain ring 4, be provided with multiple tracks bulge loop 12, increased creepage distance; Anode electrode 1 be provided with anode copper ring 3, improved the radiating effect of thyristor; Chip retainer ring 6 is set on anode electrode 1; Fix and under high-pressure situations, realize protection in order to chip to peripheral anode porcelain ring 4; Have more high sensitivity, easier self-shield performance and measure and the forward recovery self-shield (FRP) that realizes overvoltage; 6 inches extra-high voltage high-power photo thyristor element shells have possessed thyristor at blocking voltage 8500V, and the requirement of high-air-tightness, high stability, high reliability is safe and reliable under the on-state average current 4500A state.
Claims (9)
1. an extra-high voltage high-power photo thyristor element shell comprises anode base (18) and covers (11) with the cathode tube of said anode base (18) corresponding matching; Said cathode tube lid (11) can stretch in the anode base (18), and with the concentric distribution of anode base (18); Said anode base (18) comprises anode electrode (1), anode NOL ring (2), anode porcelain ring (4) and the anode flange (5) of concentric sealing-in, and anode NOL ring (2) sealing-in is in the outer rim of anode electrode (1); Cathode tube lid (11) comprises cathode electrode (7) and the concentric sealing-in cathode flange (8) in said cathode electrode (7) outer rim; Be provided with in the cathode electrode (7) and be used for light-triggered negative electrode window module, said negative electrode window module and the concentric setting of cathode electrode (7); It is characterized in that: the end of said anode electrode (1) is sealed with chip retainer ring (6) with one heart, and said chip retainer ring (6) is positioned at anode porcelain ring (4); The negative electrode window module be positioned at chip retainer ring (6) directly over.
2. extra-high voltage high-power photo thyristor element shell according to claim 1; It is characterized in that: said negative electrode window module comprises the axially extending bore (15) that is positioned on the cathode electrode (7); Have the groove (16) that is connected with said through hole (15) on the upper surface of cathode electrode (7); The lower surface of cathode electrode (7) is provided with the counterbore (17) that is connected with through hole (15), is provided with window porcelain ring (9) in the said counterbore (17) and is positioned at the sapphire (10) on said window porcelain ring (9) lower surface.
3. extra-high voltage high-power photo thyristor element shell according to claim 1, it is characterized in that: the lower end of said cathode electrode (7) is provided with some steps (19).
4. extra-high voltage high-power photo thyristor element shell according to claim 1; It is characterized in that: the outer rim of said anode electrode (1) lower end is provided with the anode copper ring (3) of concentric sealing-in, and said anode copper ring (3) contacts with the bottom of anode NOL ring (2).
5. extra-high voltage high-power photo thyristor element shell according to claim 1; It is characterized in that: the center of said chip retainer ring (6) is provided with first location notch (13), and the outside of last first location notch of chip retainer ring (6) (13) is provided with second location notch (14) of symmetrical distribution.
6. extra-high voltage high-power photo thyristor element shell according to claim 1, it is characterized in that: said anode porcelain ring (4) is provided with some bulge loops (12).
7. according to claim 1 or 6 described extra-high voltage high-power photo thyristor element shells, it is characterized in that: said anode porcelain ring (4) adopts 95% aluminium oxide ceramics.
8. extra-high voltage high-power photo thyristor element shell according to claim 3 is characterized in that: said window porcelain ring (9) adopts 95% aluminium oxide ceramics.
9. extra-high voltage high-power photo thyristor element shell according to claim 1; It is characterized in that: said cathode tube lid (11) stretches in the anode base (18); Be provided with thyristor chip between anode electrode (1) and cathode electrode (7); Said thyristor chip is installed on the end of anode electrode (1), thyristor chip and negative electrode window module and the concentric distribution of anode electrode (1) through chip retainer ring (6).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210196501.2A CN102694035B (en) | 2012-06-14 | 2012-06-14 | Extra-high-voltage and large-power light-operated thyristor element casing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210196501.2A CN102694035B (en) | 2012-06-14 | 2012-06-14 | Extra-high-voltage and large-power light-operated thyristor element casing |
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| CN102694035A true CN102694035A (en) | 2012-09-26 |
| CN102694035B CN102694035B (en) | 2014-12-03 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110867420A (en) * | 2019-12-20 | 2020-03-06 | 西安派瑞功率半导体变流技术股份有限公司 | Ceramic tube shell full-crimping packaging structure of multi-photosensitive-area light-operated thyristor chip |
| CN110867420B (en) * | 2019-12-20 | 2024-05-31 | 西安派瑞功率半导体变流技术股份有限公司 | Ceramic tube shell full-compression joint packaging structure of multi-photosensitive-area light-operated thyristor chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2645240Y (en) * | 2003-03-26 | 2004-09-29 | 夏吉夫 | High power thyristor with reclaimable plastic cases |
| CN201946618U (en) * | 2011-03-14 | 2011-08-24 | 无锡小天鹅陶瓷有限责任公司 | Tube shell of photo-thyristor element |
| CN202189774U (en) * | 2011-06-29 | 2012-04-11 | 江阴市赛英电子有限公司 | Super-power thyristor packaging structure |
| CN202633323U (en) * | 2012-06-14 | 2012-12-26 | 无锡天杨电子有限公司 | Extra-high voltage large-power photo-thyristor component tube case |
-
2012
- 2012-06-14 CN CN201210196501.2A patent/CN102694035B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2645240Y (en) * | 2003-03-26 | 2004-09-29 | 夏吉夫 | High power thyristor with reclaimable plastic cases |
| CN201946618U (en) * | 2011-03-14 | 2011-08-24 | 无锡小天鹅陶瓷有限责任公司 | Tube shell of photo-thyristor element |
| CN202189774U (en) * | 2011-06-29 | 2012-04-11 | 江阴市赛英电子有限公司 | Super-power thyristor packaging structure |
| CN202633323U (en) * | 2012-06-14 | 2012-12-26 | 无锡天杨电子有限公司 | Extra-high voltage large-power photo-thyristor component tube case |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110867420A (en) * | 2019-12-20 | 2020-03-06 | 西安派瑞功率半导体变流技术股份有限公司 | Ceramic tube shell full-crimping packaging structure of multi-photosensitive-area light-operated thyristor chip |
| CN110867420B (en) * | 2019-12-20 | 2024-05-31 | 西安派瑞功率半导体变流技术股份有限公司 | Ceramic tube shell full-compression joint packaging structure of multi-photosensitive-area light-operated thyristor chip |
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| CN102694035B (en) | 2014-12-03 |
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