CN102694035B - Extra-high-voltage and large-power light-operated thyristor element casing - Google Patents
Extra-high-voltage and large-power light-operated thyristor element casing Download PDFInfo
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- CN102694035B CN102694035B CN201210196501.2A CN201210196501A CN102694035B CN 102694035 B CN102694035 B CN 102694035B CN 201210196501 A CN201210196501 A CN 201210196501A CN 102694035 B CN102694035 B CN 102694035B
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Abstract
The invention provides an extra-high-voltage and large-power light-operated thyristor element casing. The extra-high-voltage and large-power light-operated thyristor element casing comprises an anode pipe seat and a cathode pipe cover which is correspondingly matched with the anode pipe seat, wherein the cathode pipe cover can stretch into the anode pipe seat and is concentrically with the anode pipe seat; the anode pipe seat comprises an anode electrode, an anode stress ring, an anode ceramic ring and an anode flange, which are concentrically sealed; the anode stress ring is sealed at the outer edge of the anode electrode; the cathode pipe cover comprises a cathode electrode and a cathode flange which is concentrically sealed at the outer edge of the cathode electrode; the cathode electrode is internally provided with a cathode window module for light triggering; the cathode window module and the cathode electrode are concentrically arranged; a chip fixing ring is concentrically sealed at the end part of the anode electrode and the chip fixing ring is located in the anode ceramic ring; and the cathode window module is located right above the chip fixing ring. The extra-high-voltage and large-power light-operated thyristor element casing has a compact structure, improves the explosion-proof performance, has convenience for installation and use and good heat radiation effect, and is stable and reliable.
Description
Technical field
The present invention relates to a kind of Thyristor shell, especially a kind of extra-high voltage high-power tube shell of photo-thyristor element, specifically a kind of 6 inches of extra-high voltage high-power tube shell of photo-thyristor elements, are applied to extra-high voltage direct-current transmission, belong to the technical field of power electronics.
Background technology
At present, all high voltage direct current transmission projects all adopt the thyristor of high voltage, large electric current.In order to adapt to the situation of Chinese national economy develop rapidly, along with the Eleventh Five-Year Plan period ± 800KV extra-high voltage direct-current transmission demonstration project is by the national grid acceptance of work, in the coming five years, country will give priority to extra-high voltage direct-current transmission technology, coordinate southwestern water power, North China, northwest coal electricity and the exploitation of wind-powered electricity generation base, build 11 extra-high voltage direct-current transmission engineerings such as silk screen-Jiangsu.The five-year, the investment amount of ultra high voltage is expected to reach 2,700 hundred million yuan.
The commanding elevation that China applies in occupation of world today's power electronic technology in Technology of HVDC based Voltage Source Converter field.Photo thyristor (LTT) as a kind of power semiconductor be before more than 20 years, grew up and be applied to direct current transportation application, its principle is to utilize the thyristor of the illumination signal triggering and conducting of certain wavelength, and high-power light-operated triggering signal is to realize by the semiconductor laser on optical cable.Compared with adopting the transmission of electricity of traditional electrical triggering thyristor dc, its system response speed is fast, controllability is better, operational mode is flexible, can greatly reduce system short-circuit than conventional direct current transportation, can also be to passive mains supply, be to solve the effective way that large area region has a power failure, realizes remote isolated power transmission.
At present, the Westinghouse Electric of the U.S., the existing history that small dimension photo thyristor (LTT) is succeeded in developing of GE company and ABB AB is also applied to HVDC(extra-high voltage direct-current transmission), the above extra-high voltage direct-current transmission of ± 800KV needs 6 inches of photo thyristors, and 6 inches of extra-high voltage high-power photo thyristors are being controlled high voltage, when large electric current, will certainly be to the manufacturing technology of case of extra-high voltage high-power thyristor component, especially in air-tightness, the aspect such as stability and explosion-proof proposes higher requirement, this is a difficult point of current extra-high voltage high-power tube shell of photo-thyristor element.
Summary of the invention
The object of the invention is to overcome the problem that large specification photo thyristor exists in manufacturing technology, a kind of extra-high voltage high-power tube shell of photo-thyristor element is provided, its compact conformation, improves explosion-proof performance, easy to install, and good heat dissipation effect is reliable and stable.
According to technical scheme provided by the invention, described extra-high voltage high-power tube shell of photo-thyristor element, comprises anode base and the cathode tube lid with described anode base corresponding matching; Described cathode tube lid can stretch in anode base, and distributes with anode base is concentric; Described anode base comprises anode electrode, anode stress loop, anode porcelain ring and the anode flange of concentric sealing-in, and the sealing-in of anode stress loop is in the outer rim of anode electrode; Cathode tube lid comprise cathode electrode and with one heart sealing-in at the cathode flange of described cathode electrode outer rim; In cathode electrode, be provided with for light-triggered negative electrode window module, described negative electrode window module arranges with cathode electrode is concentric; The end of described anode electrode is sealed with chip retainer ring with one heart, and described chip retainer ring is positioned at anode porcelain ring; Negative electrode window module be positioned at chip retainer ring directly over.
Described negative electrode window module comprises the axially extending bore being positioned on cathode electrode, on the upper surface of cathode electrode, have the groove being connected with described through hole, the lower surface of cathode electrode is provided with the counterbore being connected with through hole, is provided with window porcelain ring and is positioned at the sapphire on described window porcelain ring lower surface in described counterbore.
The lower end of described cathode electrode is provided with some steps.
The outer rim of described anode electrode lower end is provided with the anode copper ring of concentric sealing-in, and described anode copper ring contacts with the bottom of anode stress loop.
The center of described chip retainer ring is provided with the first location notch, and on chip retainer ring, the outside of the first location notch is provided with the second symmetrical location notch.
Described anode porcelain ring is provided with some bulge loops.Described anode porcelain ring adopts 95% aluminium oxide ceramics.Described window porcelain ring adopts 95% aluminium oxide ceramics.
Described cathode tube lid stretches in anode base, between anode electrode and cathode electrode, is provided with thyristor chip, and described thyristor chip is installed on the end of anode electrode by chip retainer ring, and thyristor chip is with negative electrode window module and anode electrode is concentric distributes.
Advantage of the present invention: by window porcelain ring and sapphire are set on cathode electrode, realized light-triggered structural requirement, and provide with respect to electricity and trigger higher sensitivity, more easily realize self-shield performance and the forward recovery self-shield (FRP) to overvoltage; On the outer wall of anode porcelain ring, be provided with multiple tracks bulge loop, increased creepage distance; On anode electrode, be provided with anode copper ring, improved the radiating effect of thyristor; Chip retainer ring is set on anode electrode, fixes and realize the protection to peripheral anode porcelain ring in order to chip under high-pressure situations.6 inches of extra-high voltage high-power tube shell of photo-thyristor elements have possessed thyristor at blocking voltage 8500V, the requirement of high-air-tightness, high stability, high reliability under on-state average current 4500A state.
Brief description of the drawings
Fig. 1 is the structural representation of invention.
Fig. 2 is the structural representation of chip retainer ring of the present invention.
Fig. 3 is the vertical view of Fig. 2.
Fig. 4 is the structural representation of cathode tube lid of the present invention.
Fig. 5 is the partial top view of Fig. 4.
Fig. 6 is the structural representation of anode base of the present invention.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Fig. 1 ~ Fig. 6: the present invention includes anode electrode 1, anode stress loop 2, anode copper ring 3, anode porcelain ring 4, anode flange 5, chip retainer ring 6, cathode electrode 7, cathode flange 8, window porcelain ring 9, sapphire 10, cathode tube lid 11, bulge loop 12, the first location notch 13, the second location notch 14, through hole 15, groove 16, counterbore 17 and anode base 18 and step 19.
As shown in Fig. 1, Fig. 4, Fig. 5 and Fig. 6: trigger in order to realize light, tube shell of photo-thyristor element of the present invention comprises anode base 18 and the cathode tube lid 11 with described anode base 18 corresponding matching, described cathode tube lid 11 can stretch in anode base 18, when cathode tube lid 11 stretch into be installed on anode base 18 interior after, cathode tube lid 11 and the concentric distribution of anode base 18.
Described anode base 18 comprises anode electrode 1, anode stress loop 2, anode copper ring 3, anode porcelain ring 4 and the anode flange 5 of concentric distribution sealing-in, anode stress loop 2 is packaged on the outer rim of anode electrode 1 with one heart, anode porcelain ring 4 is positioned in anode stress loop 2, the end of anode porcelain ring 4 is provided with anode flange 5, anode copper ring 3 is positioned at the below of anode stress loop 2, anode copper ring 3 is packaged on the outer rim of anode electrode 1 with one heart, and anode copper ring 3 contacts with the bottom of anode stress loop 2.Can improve the radiating effect of thyristor by anode copper ring 3.The outer wall of anode porcelain ring 4 is provided with some bulge loops 12, can increase creepage distance by the multiple tracks bulge loop 12 arranging.After above-mentioned setting, the end, one end of anode electrode 1 is stretched in anode porcelain ring 4.
Anode electrode 1 stretches into end in anode porcelain ring 4 for thyristor chip is installed, and the diameter that is installed on the thyristor chip of anode electrode 1 end in the embodiment of the present invention is 6 inches (150mm), can adapt to the blocking-up requirement of high-voltage large current.The explosion hazard producing when block high voltages, the large electric current in order to reduce thyristor chip, the end of anode electrode 1 of the present invention is provided with chip retainer ring 6, the center of described chip retainer ring 6 is provided with the first location notch 13, the both sides of described the first location notch 13 are provided with the second symmetrical location notch 14, facilitate chip retainer ring 6 to be installed on anode electrode 1 by the first location notch 13 and the second location notch 14, can facilitate thyristor chip to be installed on the end of anode electrode 1 simultaneously; As shown in Figures 2 and 3.Chip retainer ring 6 adopts alloy material to make, and the external diameter of chip retainer ring 6 is greater than the external diameter of anode electrode 1 end; Thyristor chip is installed on the end of anode electrode 1 by chip retainer ring 6.When thyristor chip produces explosion time under high voltage, the large function of current, chip retainer ring 6 can stop that the fragment anode porcelain ring 4 that blast produces moves, avoid 4 fragmentations of anode porcelain ring, produce larger explosion hazard, improve the safety and reliability of whole thyristor.
Cathode tube lid 11 comprises cathode electrode 7, and the outer rim of described cathode electrode 7 is sealed with cathode flange 8 with one heart, and cathode flange 8 is positioned at the end, one end of cathode electrode 7, and the other end of cathode electrode 7 is provided with the step 19 of some axial distribution.In cathode electrode 7, be provided with the negative electrode window module of concentric distribution, described negative electrode window module is for light triggered thyristor chip.In the embodiment of the present invention, negative electrode window module comprises through hole 15, and the upper surface of described through hole 15 use cathode electrodes 7 is to downward-extension, and the upper surface of cathode electrode 7 is also provided with the groove 16 being connected with through hole 15.The lower surface of cathode electrode 7 is provided with the counterbore 17 being connected with through hole 15, and the axis of described counterbore 17, through hole 15 and the axis of cathode electrode 7 are located along the same line.In counterbore 17, be provided with window porcelain ring 9, the lower surface of described negative electrode porcelain ring 9 is provided with sapphire 10, and the axis of window porcelain ring 9 and sapphire 10 and the axis of cathode electrode 7 are located along the same line.By groove 14, light-dependent control element is installed, light-dependent control element is generally semiconductor laser, the triggering light that light-dependent control element produces is injected on the window porcelain ring 9 and sapphire 10 of counterbore 17 through through hole 15, after sapphire 10 refractions, incide on thyristor chip, to trigger unlatching or the shutoff of thyristor chip, the light after sapphire 10 refractions can meet the triggering requirement of thyristor chip.Window porcelain ring 9 and anode porcelain ring 4 adopt 95% aluminium oxide ceramics.
As shown in Fig. 1 ~ Fig. 6: when use, thyristor chip is installed on the end of anode electrode 1 by chip retainer ring 6, thyristor chip is installed behind location, the end that cathode tube lid 11 correspondences is arranged to negative electrode window module is stretched in anode porcelain ring 4, cathode flange 8 on cathode electrode 7 contacts with the anode flange 5 on anode porcelain ring 4, negative electrode window module be positioned at chip retainer ring 6 directly over.Thyristor chip and anode electrode 1, cathode electrode 7 are in contact, thyristor chip and chip retainer ring 6 and the concentric distribution of anode base 18.When work, the triggering light that light-dependent control element produces acts on thyristor chip after sapphire 10 refractions, to trigger unlatching or the shutoff of thyristor chip.Chip retainer ring 6 can slow down the detonation power of thyristor chip, avoids 4 fragmentations of anode porcelain ring, improves the safety in utilization of whole shell.
The present invention adopts high-accuracy process technology manufacture to form.Technical indicator:
Sealing-in air-tightness≤1 × 10
-8pam
3/ S; Copper electrode flatness≤0.015mm; Window light transmittance>=99.99%; Window sealing strength>=5KN/cm
2; Sapphire window stretching resistance>=10Kg.
The present invention, by window porcelain ring 9 and sapphire 10 are set on cathode electrode 7, has realized light-triggered structural requirement; On the outer wall of anode porcelain ring 4, be provided with multiple tracks bulge loop 12, increased creepage distance; On anode electrode 1, be provided with anode copper ring 3, improved the radiating effect of thyristor; Chip retainer ring 6 is set on anode electrode 1; fix and realize the protection to peripheral anode porcelain ring 4 in order to chip under high-pressure situations; there is more high sensitivity, more easily realize self-shield performance and measure and the forward recovery self-shield (FRP) to overvoltage; 6 inches of extra-high voltage high-power tube shell of photo-thyristor elements have possessed thyristor at blocking voltage 8500V; under on-state average current 4500A state, the requirement of high-air-tightness, high stability, high reliability, safe and reliable.
Claims (7)
1. an extra-high voltage high-power tube shell of photo-thyristor element, comprises anode base (18) and the cathode tube lid (11) with described anode base (18) corresponding matching; Described cathode tube lid (11) can stretch in anode base (18), and with the concentric distribution of anode base (18); Described anode base (18) comprises anode electrode (1), anode stress loop (2), anode porcelain ring (4) and the anode flange (5) of concentric sealing-in, and anode stress loop (2) sealing-in is in the outer rim of anode electrode (1); Cathode tube lid (11) comprise cathode electrode (7) and with one heart sealing-in at the cathode flange (8) of described cathode electrode (7) outer rim; In cathode electrode (7), be provided with for light-triggered negative electrode window module described negative electrode window module and the concentric setting of cathode electrode (7); It is characterized in that: the end of described anode electrode (1) is sealed with chip retainer ring (6) with one heart, described chip retainer ring (6) is positioned at anode porcelain ring (4); Negative electrode window module be positioned at chip retainer ring (6) directly over;
The center of described chip retainer ring (6) is provided with the first location notch (13), and the outside of upper the first location notch of chip retainer ring (6) (13) is provided with symmetrical the second location notch (14);
Described cathode tube lid (11) stretches in anode base (18), between anode electrode (1) and cathode electrode (7), be provided with thyristor chip, described thyristor chip is installed on the end of anode electrode (1) by chip retainer ring (6), thyristor chip and negative electrode window module and the concentric distribution of anode electrode (1).
2. extra-high voltage high-power tube shell of photo-thyristor element according to claim 1, it is characterized in that: described negative electrode window module comprises the axially extending bore (15) being positioned on cathode electrode (7), on the upper surface of cathode electrode (7), have the groove (16) being connected with described through hole (15), the lower surface of cathode electrode (7) is provided with the counterbore (17) being connected with through hole (15), is provided with window porcelain ring (9) and is positioned at the sapphire (10) on described window porcelain ring (9) lower surface in described counterbore (17).
3. extra-high voltage high-power tube shell of photo-thyristor element according to claim 1, is characterized in that: the lower end of described cathode electrode (7) is provided with some steps (19).
4. extra-high voltage high-power tube shell of photo-thyristor element according to claim 1, it is characterized in that: the outer rim of described anode electrode (1) lower end is provided with the anode copper ring (3) of concentric sealing-in, and described anode copper ring (3) contacts with the bottom of anode stress loop (2).
5. extra-high voltage high-power tube shell of photo-thyristor element according to claim 1, is characterized in that: described anode porcelain ring (4) is provided with some bulge loops (12).
6. extra-high voltage high-power tube shell of photo-thyristor element according to claim 1 or 5, is characterized in that: described anode porcelain ring (4) adopts 95% aluminium oxide ceramics.
7. extra-high voltage high-power tube shell of photo-thyristor element according to claim 2, is characterized in that: described window porcelain ring (9) adopts 95% aluminium oxide ceramics.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210196501.2A CN102694035B (en) | 2012-06-14 | 2012-06-14 | Extra-high-voltage and large-power light-operated thyristor element casing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210196501.2A CN102694035B (en) | 2012-06-14 | 2012-06-14 | Extra-high-voltage and large-power light-operated thyristor element casing |
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| Publication Number | Publication Date |
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| CN102694035A CN102694035A (en) | 2012-09-26 |
| CN102694035B true CN102694035B (en) | 2014-12-03 |
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| CN110867420A (en) * | 2019-12-20 | 2020-03-06 | 西安派瑞功率半导体变流技术股份有限公司 | Ceramic tube shell full-crimping packaging structure of multi-photosensitive-area light-operated thyristor chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2645240Y (en) * | 2003-03-26 | 2004-09-29 | 夏吉夫 | High power thyristor with reclaimable plastic cases |
| CN201946618U (en) * | 2011-03-14 | 2011-08-24 | 无锡小天鹅陶瓷有限责任公司 | Tube shell of photo-thyristor element |
| CN202189774U (en) * | 2011-06-29 | 2012-04-11 | 江阴市赛英电子有限公司 | Super-power thyristor packaging structure |
| CN202633323U (en) * | 2012-06-14 | 2012-12-26 | 无锡天杨电子有限公司 | Extra-high voltage large-power photo-thyristor component tube case |
-
2012
- 2012-06-14 CN CN201210196501.2A patent/CN102694035B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2645240Y (en) * | 2003-03-26 | 2004-09-29 | 夏吉夫 | High power thyristor with reclaimable plastic cases |
| CN201946618U (en) * | 2011-03-14 | 2011-08-24 | 无锡小天鹅陶瓷有限责任公司 | Tube shell of photo-thyristor element |
| CN202189774U (en) * | 2011-06-29 | 2012-04-11 | 江阴市赛英电子有限公司 | Super-power thyristor packaging structure |
| CN202633323U (en) * | 2012-06-14 | 2012-12-26 | 无锡天杨电子有限公司 | Extra-high voltage large-power photo-thyristor component tube case |
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| CN102694035A (en) | 2012-09-26 |
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