CN218499027U

CN218499027U - Silicon stack with high support structure

Info

Publication number: CN218499027U
Application number: CN202222958520.6U
Authority: CN
Inventors: 陈岗; 夏冰成
Original assignee: Anshan Leadsun Electronics Co ltd
Current assignee: Anshan Leadsun Electronics Co ltd
Priority date: 2022-11-07
Filing date: 2022-11-07
Publication date: 2023-02-17
Anticipated expiration: 2032-11-07

Abstract

The utility model provides a high bearing structure's silicon stack, including insulator foot, bracing piece, silicon stack, support with equalizer ring. The silicon stacks are in long round rod shapes and comprise a plurality of silicon stacks, two silicon stacks are transversely connected in series, and two end parts after being connected in series are respectively connected with a supporting equalizing ring to form a silicon stack assembly; a plurality of silicon stack components are transversely arranged in sequence, the end part and the two silicon stack components are supported by a supporting rod, and the bottom of the supporting rod is arranged on an insulating base. Carry out the design that wholly supports height with the silicon heap to increase with mounting plane's insulation distance and creepage distance, reduce the external injury after the silicon heap punctures, and utilize high bracing piece can also realize high position installation.

Description

Silicon stack with high support structure

Technical Field

The utility model relates to a rectifier silicon piles technical field, especially relates to a high bearing structure's silicon piles.

Background

The silicon stack is formed by packaging a plurality of diodes connected in series in epoxy resin, the working voltage is between several kilovolts and several tens of thousands of volts, and the high-voltage silicon stack has the advantages of small volume, light weight, high mechanical strength, simplicity and convenience in use, no radiation and the like, and is an essential element for converting alternating current into direct current in high-voltage rectification.

The installation of the high-voltage silicon stack sometimes needs to consider the insulation of the environment, for example, patent with publication number CN 20928218U discloses an insulating and waterproof structure of the high-voltage silicon stack, which designs the insulating and waterproof structure of the high-voltage silicon stack and focuses on waterproofing and casing fixing. However, the design structure in consideration of the insulation distance and the creepage distance of the high voltage silicon stack is not so much.

Disclosure of Invention

In order to solve the technical problem in the background art, the utility model provides a high bearing structure's silicon stack carries out the whole design that supports the height that carries out with the silicon stack to increase with mounting surface's insulating distance and creepage distance, reduce the external injury after the silicon stack punctures, and utilize the high bracing piece can also realize high position installation.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a silicon stack with a high supporting structure comprises an insulating base, a supporting rod, a silicon stack and a grading ring for supporting.

The silicon stacks are long round rod-shaped and comprise a plurality of silicon stacks, two silicon stacks are transversely connected in series, and two end parts after being connected in series are respectively connected with a supporting equalizing ring to form a silicon stack assembly; a plurality of silicon stack components are transversely arranged in sequence, the end part and the two silicon stack components are supported by a supporting rod, and the bottom of the supporting rod is arranged on an insulating base.

Furthermore, the silicon stack assembly further comprises a grading ring for switching, and one grading ring for switching is connected between the two silicon stacks in each silicon stack assembly.

Furthermore, the top of the supporting rod is provided with a U-shaped bracket, the U-shaped bracket is inversely fixed at the top of the supporting rod, and the equalizing rings for supporting the end parts of the two adjacent silicon stack assemblies are fixed on the U-shaped bracket through bolts.

Furthermore, the supporting rod and the insulating base are made of insulating materials.

Compared with the prior art, the beneficial effects of the utility model are that:

1) The utility model designs the overall supporting height of the silicon stack, thereby increasing the insulation distance and creepage distance with the mounting plane, reducing the external damage after the breakdown of the silicon stack, and realizing high position mounting by using the high supporting rod;

2) The equalizing ring for supporting has an equalizing lightning protection effect, and simultaneously realizes the fixation of the two silicon stack components and the supporting rod and the electrical connection between the two silicon stack components;

3) The grading ring for switching has the grading lightning protection effect;

4) U type bracket is installed at the top of bracing piece, and U type bracket realizes the fixed of two silicon stack subassemblies and bracing piece, still realizes electrical connection through U type bracket between two silicon stack subassemblies simultaneously.

Drawings

Fig. 1 is an overall structural view of a high support structure of the present invention;

fig. 2 is a top view of the grading ring of the present invention;

fig. 3 is a side view of the grading ring of the present invention;

FIG. 4 is a silicon stack structure of the present invention;

FIG. 5 is a structural view of the U-shaped bracket of the present invention;

FIG. 6 is a structural view of the support rod of the present invention;

FIG. 7 is a structural view of the upper cover of the supporting rod of the present invention;

FIG. 8 is a structural view of the lower cover of the support rod of the present invention;

fig. 9 is a top view of the insulating base structure of the present invention.

In the figure: 1-insulating base 2-support rod 3-silicon stack 4-supporting equalizing ring 5-silicon stack assembly 6-switching equalizing ring 7-U-shaped bracket 8-center hole 9-peripheral through hole 10-connecting screw rod 11-upper cover 12-lower cover 13-first bolt hole 14-second bolt hole 15-mounting hole.

Detailed Description

The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings:

as shown in fig. 1-9, a silicon stack with a high support structure includes an insulating base 1, a support rod 2, a silicon stack 3, and a supporting grading ring 4. The silicon stacks 3 are in long round rod shapes and comprise a plurality of silicon stacks, two silicon stacks 3 are transversely connected in series, and two ends of the silicon stacks after being connected in series are respectively connected with a supporting equalizing ring 4 to form a silicon stack assembly 5; every two silicon stacks 3 are a group, constitute a plurality of silicon stack subassemblies 5, and a plurality of silicon stack subassemblies 5 transversely arrange in proper order, support with bracing piece 2 between tip and two silicon stack subassemblies 5, and install on insulating base 1 bracing piece 2 bottom.

The silicon stack assembly is characterized by further comprising a grading ring 6 for switching, wherein one grading ring 6 for switching is connected between the two silicon stacks 3 in each silicon stack assembly 5.

The top of the support rod 2 is provided with a U-shaped bracket 7,U, the bracket 7 is inversely fixed on the top of the support rod 2, and the equalizing rings 4 for supporting the end parts of two adjacent silicon stack assemblies 5 are fixed on the U-shaped bracket 7 through bolts.

The support rod 2 and the insulating base 1 are made of epoxy resin of insulating materials.

Silicon stack 3 for the diode encapsulation by a plurality of series connections make in epoxy (prior art, the utility model discloses a silicon stack 3 inside is encapsulation after conventional diode series connection), as shown in fig. 4, the utility model discloses a silicon stack 3 has made the long round bar shape, the screw hole is left at long round bar both ends, uses as electrical connection and installation.

The equalizing ring 4 for supporting and the equalizing ring 6 for switching have the same structure and are of disc structures, a central hole 8 is formed in the center of the equalizing ring, and four through holes 9 are formed in the periphery of the equalizing ring.

When the equalizing ring is used as an equalizing ring 6 for switching, the connecting screw rod 10 is inserted into a center hole 8 of the equalizing ring 6 for switching, the two ends of the connecting screw rod 10 are screwed into end screw holes of the two silicon stacks 3, so that the two silicon stacks 3 in the silicon stack assembly 5 are electrically connected and fixed, and the equalizing ring 6 for switching also has the effects of equalizing and lightning protection.

When the equalizing ring is used as the equalizing ring 4 for supporting, bolts are firstly inserted into end screw holes of the silicon stack 3 through a central hole 8 of the equalizing ring 4 for supporting, the equalizing ring 4 for supporting and the silicon stack 3 are fixedly connected, then bolts are further inserted into four through holes of the U-shaped bracket 7 through peripheral through holes 9 of the equalizing ring 4 for supporting, the equalizing ring 4 for supporting and the U-shaped bracket 7 are fixedly connected, and therefore the equalizing ring 4 for supporting and the supporting rod 2 are fixed. The supporting equalizing ring 4 and the U-shaped bracket 7 are made of aluminum materials, electrical connection is realized between the two silicon stack 3 assemblies through the supporting equalizing ring 4 and the U-shaped bracket 7, and the supporting equalizing ring 4 also has the functions of equalizing voltage and preventing lightning.

The support rod 2 is of a long round rod structure, an upper cover 11 and a lower cover 12 are further arranged at two ends of the support rod respectively, a first bolt hole 13 is formed in the upper plane of the upper cover 11 and used for connecting and fixing the support rod 2 and the U-shaped bracket 7, and a second bolt hole 14 is formed in the lower plane of the lower cover 12 and used for connecting and fixing the support rod 2 and the insulation base 1.

The insulating base 1 is of a disc-shaped structure, is provided with a matched bolt hole fixed with the lower cover 12 of the supporting rod 2 and is also provided with peripheral mounting holes 15 for fixing with a mounting platform.

The utility model discloses carry out whole design that supports height with silicon stack 3 to increase and mounting surface's insulating distance and creepage distance, reduce the external injury after 3 punctures of silicon stack, and utilize high bracing piece 2 can also realize high position installation.

The above embodiments are implemented on the premise of the technical solution of the present invention, and detailed implementation and specific operation processes are given, but the protection scope of the present invention is not limited to the above embodiments. The methods used in the following examples are conventional methods unless otherwise specified.

Claims

1. The silicon stack with the high supporting structure is characterized by comprising an insulating base, a supporting rod, a silicon stack and a supporting equalizing ring;

the silicon stack is in the shape of a long round rod and comprises a plurality of silicon stacks; two silicon stacks are transversely connected in series, and two ends of the two silicon stacks after being connected in series are respectively connected with a grading ring for supporting to form a silicon stack assembly; a plurality of silicon stack assemblies are transversely arranged in sequence, the end part and the space between the two silicon stack assemblies are supported by a supporting rod, and the bottom of the supporting rod is arranged on an insulating base.

2. The silicon stack with high support structure as claimed in claim 1, further comprising an adapter grading ring, wherein one adapter grading ring is connected between two silicon stacks in each silicon stack assembly.

3. The silicon stack with the high support structure as claimed in claim 1, wherein a U-shaped bracket is mounted on the top of the support rod, the U-shaped bracket is fixed on the top of the support rod in an inverted manner, and the equalizing rings for supporting the end parts of two adjacent silicon stack assemblies are fixed on the U-shaped bracket through bolts.

4. The silicon stack as claimed in claim 1, wherein the support rods and the insulating base are made of insulating material.