CN102693925B - The temperature characterisitic testing fixture of semiconductor light-emitting elements and temperature characterisitic inspection method - Google Patents
The temperature characterisitic testing fixture of semiconductor light-emitting elements and temperature characterisitic inspection method Download PDFInfo
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Abstract
A kind of temperature characterisitic testing fixture of semiconductor light-emitting elements and temperature characterisitic inspection method. Temperature characterisitic testing fixture comprises the semiconductor light-emitting elements of apply/voltage measuring device of electric current and determination object. Apply/voltage measuring device of electric current comprises electric current applying unit, voltage detection department. Apply/voltage measuring device of electric current is for example chip probe, the electrode of the semiconductor light-emitting elements of probe alignment wafer state is carried out to electric current applies, voltage determination. Use forward voltage values and the light output valve measured, for example, carry out the quality judgement of the temperature characterisitic of semiconductor light-emitting elements by outside operational part, detection unit. Thus, can provide a kind of temperature characterisitic testing fixture and temperature characterisitic inspection method that does not increase chip area, can realize with low cost.
Description
Technical field
The present invention relates to temperature characterisitic testing fixture and the temperature characterisitic inspection method of semiconductor light-emitting elements,Relate in particular to semiconductor light-emitting elements is continuously applied forward current and measures the forward of semiconductor light-emitting elementsVoltage, thereby the apparatus and method of inspection temperature characterisitic.
Background technology
In recent years, be red, green, blue in order to realize the three primary colors of light, expect blue LED (LightEmmitingdiode:LED) appearance of (following, also referred to as blue led). In nineteen ninety for inventionNitride-based blue led, use the market of the product of LED to expand LCD monitor to from signalThe various illuminations of backlight, the family expenses of backlight and liquid crystal TV set. The liquid crystal electricity of LED-backlit has been installedThere is depending on machine the machine that price range is suitable, and universal rapidly.
Semiconductor light-emitting-diode is being appealed saving source, energy-conservation current, from the saving of resource, energyViewpoint, also entertains very large expectation to the more high efficiency light emitting diode of exploitation.
And then, in order to obtain high efficiency blue led, for example, as semiconductor light-emitting elements (, indigo plantLook LED) the operation of one of manufacturing process check in operation, implement high-temperature temperature characteristic check operation,In high-temperature temperature characteristic check operation, make to be examined semiconductor light-emitting elements and rise to maximum functional guaranteeNear temperature, test its electrical characteristic. Now, maintain height as being examined semiconductor light-emitting elementsThe method of temperature, is placed in thermostat by being examined semiconductor light-emitting apparatus, and environment temperature is risen toTill set point of temperature, remain on high temperature thereby will be examined semiconductor light-emitting elements.
But, although the thermostat of above-mentioned use can easily carry out temperature control, conversely, existThe shortcoming that the expense of equipment cost increases. And, there is the shortcoming consuming time in order to promote temperature.
Therefore, propose a kind of not with thermostat the spontaneous heating with semiconductor light-emitting elements carry out heightThe method that temperature characteristics checks.
For example, in the disclosed technology of (Japanese) Patent Laid-Publication 8-101250 communique, following side has been proposedMethod: by making semiconductor element itself heating with output transistor become high temperature, thereby do not useThermostat and carry out hot properties inspection, wherein the lead-out terminal of this output transistor is opener (オ mono-プApplication コ レ Network タ), and this output transistor comprises the parasitism two between ground terminal and power supply feeding terminalUtmost point pipe.
In addition, in the disclosed technology of (Japanese) Patent Laid-Publication 9-128996 communique, following side has been proposedMethod: in compensated semiconductor's element, indefinite by clock input terminal is made as, connect electricity thereby flow throughStream, makes himself heating thus, comes by the surperficial temperature sensor that is arranged on compensated semiconductor's elementThe surface temperature of observation compensated semiconductor element, if reach the temperature of regulation, defeated to clock input terminalEnter the clock using in common high temperature inspection, and carry out hot properties inspection.
But, in the disclosed hot properties inspection method of Unexamined Patent 8-101250 communique, need anotherOuter setting have lead-out terminal be opener and comprise ground terminal and power supply feeding terminal between parasitism two utmost pointsThe output transistor of pipe, for making the heater element of self-heating, can cause the increase of chip area.
In addition, in the disclosed hot properties inspection method of Unexamined Patent 9-128996 communique, be defined as,Compensated semiconductor's element, cannot be applied to beyond compensated semiconductor's element. And, in this inspection method,Owing to passing through the surface temperature of temperature sensor measurement experiment apparatus, although therefore do not need thermostat to waitThermal part, but need temperature sensor and measuring and controlling, it is complicated that the structure of testing fixture becomes. This, make self-heating thereby flow through perforation electric current in order to reach a high temperature in inside outward, therefore with use constant temperatureThe situation difference of the heater blocks such as groove, reaches time-consuming till the temperature of regulation.
Summary of the invention
The object of the present invention is to provide and a kind ofly in the hot properties inspection of semiconductor light-emitting elements, do not increaseChip area and the hot properties inspection method of semiconductor light-emitting elements that can realize with low cost. In addition,Object is to provide one not need the device such as temperature sensor and thermostat and realizes at short notice high temperatureThe method of characteristic check.
The present invention mainly comprises: electric current applying unit, applies forward current to semiconductor light-emitting elements; VoltageTest section, applies forward current by electric current applying unit continuously to semiconductor light-emitting elements, and detects firstSecond forward voltage in forward voltage and the moment after the first forward voltage; And detection unit, based onThe first forward voltage and the second forward voltage are judged the quality of semiconductor light-emitting elements.
Preferably be applied to continuously semiconductor light-emitting elements at forward current, and the second forward voltage andThe 3rd forward voltage in the moment after the second forward voltage is in the threshold range of regulation time, and detection unit is sentencedDetermining semiconductor light-emitting elements is non-defective unit.
The second forward voltage preferably being detected by voltage detection department and the 3rd forward voltage are to apply at electric currentAfter portion starts to apply semiconductor light-emitting elements, 30.0msec is to the forward voltage detecting between 200.0msec.
Preferably poor at predetermined reference voltage in the difference of the voltage of the first forward voltage and the second forward voltageIn scope time, detection unit judges that semiconductor light-emitting elements is as non-defective unit.
The present invention comprises on the other hand: electric current applying unit, applies forward current to semiconductor light-emitting elements;Light output/wavelength test section, applies forward current by electric current applying unit continuously to semiconductor light-emitting elements,And detect the first light output/wavelength and the second light output/wavelength in the moment after the first light output; VoltageTest section, detects the first forward voltage and second forward voltage in the moment after the first forward voltage;Judge fine or not the sentencing of semiconductor light-emitting elements based on the first light output/wavelength and the second light output/wavelengthBonding part; And judge the quality of semiconductor light-emitting elements based on the first forward voltage and the second forward voltageDetection unit.
The difference of preferably exporting at the first light output and the second light is in the scope of the difference of predetermined reference light output valveWhen interior, detection unit judges that semiconductor light-emitting elements is as non-defective unit.
Preferably in the first light output with the second light is exported and by the first forward voltage and the second forward voltageThe difference of the light output valve of obtaining is in the scope of the difference of predetermined reference light output valve time, and detection unit judges halfConductor light-emitting component is non-defective unit.
And then preferably temperature characterisitic testing fixture also comprises wavelength test section, for detection of light output detections portionThe wavelength of output waveform, poor in the value of the difference of the first wavelength and second wave length at predetermined reference wavelengthScope in time, detection unit judges that semiconductor light-emitting elements is as non-defective unit, the first wavelength is corresponding to the first lightThe output of wavelength test section of output, second wave length is defeated corresponding to the wavelength test section of the second light outputGo out.
The present invention comprises on the other hand: the step that semiconductor light-emitting elements is applied to forward current; Half-and-halfConductor light-emitting component applies forward current continuously, and detect the first forward voltage and the first forward voltage itAfter the step of the second forward voltage in moment; And sentence based on the first forward voltage and the second forward voltageDetermine the step that semiconductor light-emitting elements is non-defective unit.
Preferably, in the step of judging, be applied to continuously semiconductor light-emitting elements at forward current, andThe 3rd forward voltage in the second forward voltage and the moment after the second forward voltage is at the threshold value model of regulationEnclose when interior, judge that semiconductor light-emitting elements is as non-defective unit.
The present invention comprises on the other hand: the step that semiconductor light-emitting elements is applied to forward current; Half-and-halfConductor light-emitting component applies forward current continuously, and detect the first forward voltage and the first forward voltage itAfter the step of the second forward voltage in moment; Semiconductor light-emitting elements is applied to forward current continuously, andDetect the step of the first light output and the second light output in the moment after the first light output; And based onThe step that semiconductor light-emitting elements is non-defective unit is judged in the first light output and the output of the second light.
Thereby major advantage of the present invention is not use its of temperature rise that makes semiconductor light-emitting elementsHis thermal source and can check at short notice the hot properties of semiconductor light-emitting elements.
In addition, other advantages of the present invention are owing to checking hot properties before encapsulation sealing,Therefore can judge by carried out quality before encapsulation sealing, thereby reduce manufacturing cost.
In addition, other advantages of the present invention are in one of manufacturing process as semiconductor light-emitting elementsIn the characteristic check operation of operation, for the semiconductor light-emitting elements being arranged on thin slice, needn't make to measureThe temperature rise of platform and can carry out at short notice hot properties inspection.
Above and other object of the present invention, feature, aspect and advantage are according to the basis of understanding associated with accompanying drawingInvent the detailed description below being correlated with and become clear.
Brief description of the drawings
Fig. 1 is the block diagram of the temperature characterisitic testing fixture 10 of semiconductor light-emitting elements.
Fig. 2 is the figure that represents the electric current being applied by apply/voltage measuring device of electric current.
Fig. 3 is the figure that represents the mensuration sequential of the temperature characterisitic inspection in embodiment 1.
Fig. 4 represents the semiconductor light emitting at 25 DEG C, 80 DEG C of two kinds of standard test portions by said methodThe figure of the light output valve Po of element and the relation of positive current values IF.
Fig. 5 is the figure that represents the measurement result of the potential difference Vfa of the forward voltage of non-defective unit/substandard products.
Fig. 6 is the block diagram of the temperature characterisitic testing fixture 10A of semiconductor light-emitting elements.
Fig. 7 is the figure that represents the mensuration sequential of the temperature characterisitic inspection in embodiment 2.
Fig. 8 is other examples of measurement result that represent the potential difference Vfa of the forward voltage of non-defective unit/substandard productsFigure.
Fig. 9 is the measurement result that represents the variable quantity Poa of the light output of the forward voltage of non-defective unit/substandard productsFigure.
Detailed description of the invention
With reference to the accompanying drawings of embodiments of the present invention. In addition, below in the accompanying drawing of institute's reference, forOne or the additional identical number of parts suitable with it.
[embodiment 1]
Fig. 1 is the block diagram of the temperature characterisitic testing fixture 10 of semiconductor light-emitting elements. With reference to Fig. 1, temperatureDegree characteristic check device 10 comprises the semiconductor light emitting of electric current apply/voltage measuring device 1 and determination objectElement 2. Apply/voltage measuring device of electric current 1 comprises electric current applying unit 11, voltage detection department 12. Electric currentApply/voltage measuring device 1 is for example chip probe, by the semiconductor light emitting element of probe alignment wafer stateThe electrode of part 2 carries out that electric current applies, voltage determination. Use forward voltage values and the light output measuredBe worth, for example, carry out the temperature spy of semiconductor light-emitting elements 2 by outside operational part 3, detection unit 4Property quality judge.
Here, operational part 3, detection unit 4 can be included in the inside of apply/voltage measuring device of electric current 1,Also one of them can be included in to inside. In addition, operational part 3 also can will be exported from voltage detection departmentVoltage waveform former state be input in detection unit 4. In addition, also can in operational part 3, calculate desiredPhysical quantity, and its result is input to detection unit 4. For example, also can be to the voltage wave detectingShape is carried out differential, generates differentiated waveform, and this differentiated waveform is input to detection unit 4, judges semiconductorThe quality of light-emitting component 2.
Fig. 2 is the figure that represents the electric current being applied by apply/voltage measuring device of electric current. With reference to Fig. 2, the longitudinal axisRepresent to apply current value, transverse axis represents the time. Applied electric current before certain hour, can be by certainElectric current is continuously applied semiconductor light-emitting elements 2.
In addition, be not limited to the mensuration sequential that applies certain electric current as Fig. 2, also can use as figure3 such mensuration sequential are measured forward voltage and light output.
Fig. 3 is the figure that represents the mensuration sequential of temperature characterisitic inspection. With reference to Fig. 3, in this mensuration sequential,At first, after overcurrent application time 1msec, the light output valve Po_A while measuring 60mA energising(measuring 1A). Then, after overcurrent application time 1msec, the forward while measuring 1mA energisingVoltage Vf_A (measuring 2A). And then, after overcurrent application time 50msec, with mensuration 1AThe same light output valve Po_B (measuring 3A) that measures. And similarly measure forward electricity with mensuration 2A thereafterPress Vf_B (measuring 4A). In addition, measure forward voltage Vf_B in 4A owing to being from measuring 3ARise and measure in very short time, just therefore can be approximated to be after overcurrent application time 50msecTo magnitude of voltage.
In this sequential is measured, measure Po value and Vf value simultaneously. If the change time is measured, fromThe variable quantity (Δ Vf) of Vf value is estimated variations in temperature (ascending temperature). On in the time comparing with other chipsBy making, ascending temperature is identical to be eliminated the deviation of intensification degree, thereby measures the temperature characterisitic of light output valve.
As rising to measure utilizing by LED chip being applied continuously to the junction temperature Tj that electric current causesWhen temperature characterisitic, it should be noted, the deviation of the internal resistance having due to LED chip, even energising phaseThe same time, the rising value Δ Tj of junction temperature Tj also can deviation. Be that certain value is measured temperature spy in order to make Δ TjProperty (in order to eliminate deviation), use the variation delta Vf of the Vf value that applies electric current 1mA when energising. Generally, the Vf of LED chip is the parameter that depends on junction temperature Tj, this characteristic is to apply current value smallFor example, in region (1mA), be straight line, thereby therefore estimate junction temperature Tj by measuring Vf. This junction temperature TjShown in (1).
Tj＝Ta+ΔVf/m...(1)
Here, temperature T a represents environment temperature, and Δ Vf represents voltage difference, and constant m represents temperature coefficient.In addition, known constant m for example, is about 2 applying in the region that electric current is small (1mA).
Before carrying out actual temperature characterisitic inspection, need to obtain the mensuration as the standard test portion of indexResult. Its assay method is, by resin, semiconductor light-emitting elements is fixed to silvering stem (Silver コ mono-トス テ system) upper, and the structure of having carried out wire-bonded is arranged on warm table, make temperature rise arrive wishThe temperature (25 DEG C, 80 DEG C) of hoping, till semiconductor element and warm table become thermal equilibrium state by the time, fromAnd carry out the method for characteristic measurement.
Fig. 4 represents the semiconductor light emitting at 25 DEG C, 80 DEG C of two kinds of standard test portions by said methodThe figure of the light output valve Po of element and the relation of positive current values IF.
With reference to Fig. 4, waveform A1 is that light output valve Po does not rely on positive current values IF and temperature and gets roughlyThe waveform of certain value. , be the waveform of the semiconductor light-emitting elements of good temp characteristic.
On the other hand, waveform A2 depends on positive current values IF, temperature, and light output valve Po along withPositive current values IF increase and significantly reduce waveform. , be the waveform of the poor semiconductor light-emitting elements of characteristic.Can select the element good corresponding to the characteristic of waveform A1 (below also referred to as non-defective unit) and corresponding to waveformThe element (below also referred to as substandard products) of the difference of A2.
Fig. 5 is the figure that represents the measurement result of the potential difference Vfa of the forward voltage of non-defective unit/substandard products. For thisNon-defective unit and substandard products, in apply/voltage measuring device 1, be continuously applied certain electricity as shown in Figure 2 at electric currentStream apply current value 30[mA]. In the time applying, non-defective unit and substandard products are measured to forward voltage Vf.As the timing of now measuring, get t=1.0,10.0,20.0,30.0,50.0,80.0,100.0,200.0(msec), measure respectively forward voltage for non-defective unit and substandard products.
With reference to Fig. 5, suppose non-defective unit said determination timing moment t=1.0msec and arbitrarily when moment tForward voltage Vf (t), waveform B 1 represents its potential difference Vfa (=Vf (1.0)-Vf (t))Waveform. On the other hand, waveform B 2 is potential difference the Vfa (=Vf that represents the forward voltage of substandard products too(1.0)-Vf (t)) waveform.
Waveform B 1 (situation of non-defective unit) and B2 (situations of substandard products) moment t=30.0 (msec) withBefore, on potential difference Vfa, almost there is no difference. But, after moment t=30.0 (msec), electricityThe size variation of potential difference Vfa. Specifically, in waveform B 1 (situation of non-defective unit), even if increase electricityStream application time, after certain certain hour, potential difference Vfa also gets certain value. On the other hand, waveform B 2In (situations of substandard products), because electric current application time increases, potential difference Vfa further increases (waveformB2 declines).
Utilize this character, as the inspection method of the temperature characterisitic of semiconductor light-emitting elements, in each mensurationThe potential difference Vfa of time is in a certain threshold range time, is judged to be non-defective unit, can carry out quality inspection.For example, the later potential difference Vfa of moment t=50.0msec in waveform B 1 is roughly equal, on the other hand,The in the situation that of waveform B 2, potential difference Vfa is unequal. Now, the mensuration test portion of waveform B 1 is judgedFor non-defective unit.
And then the decision method checking as the temperature characterisitic of semiconductor light-emitting elements, according to predetermined electricityThe size (a reference value) of potential difference Vfa, in the situation that being less than this reference value, is defined as non-defective unit, Ke YijinAct charitably and badly check. Example as shown in Figure 5, by potential difference Vfr=-0.035[V] be set as a reference value, mensurationAs a result, be the potential difference lower than a reference value at actual potential difference Vfa, also can be judged to beNon-defective unit. For example, the waveform B 1 of Fig. 5 is subject to the judgement of non-defective unit.
In addition, in actual temperature characterisitic checks, also can utilize as measuring timing to semiconductor,Light-emitting component 2 starts to apply any timing of certain till 30.0～200.0 (msec) after electric currentForward voltage Vf, judges the quality of semiconductor light-emitting elements.
Certainly, in the situation that as mensuration, timing has been carried out checking below moment t=30.0 (msec),Potential difference Vfa is low, easily becomes the error of testing fixture, lacks the validity that quality checks. In addition,Mensuration timing is being made as more than moment t=200.0 (msec) carried out checking in the situation that to quality inspectionConsuming time, can not check at short notice.
[embodiment 2]
Fig. 6 is the block diagram of the temperature characterisitic testing fixture 10A of semiconductor light-emitting elements. With reference to Fig. 6,Temperature characterisitic testing fixture 10A comprises electric current and applies/voltage determination/light output determinator 1A and measure rightThe semiconductor light-emitting elements 2 of elephant. Apply/voltage determination of electric current/light output determinator 1A comprises that electric current executesAdd portion 11, voltage detection department 12, light output detections portion 13, wavelength test section 14. , temperature characterisiticTesting fixture 10A also comprises light output in the structure of the temperature characterisitic testing fixture 10 of embodiment 1Test section 13, wavelength test section 14. Measure by wavelength test section 14 light that light output detections portion 13 exportsThe wavelength of output. Apply/voltage determination of electric current/light output determinator 1A is for example chip probe, will visitThe electrode of semiconductor light-emitting elements 2 that pin is aimed at wafer state carries out that electric current applies, voltage determination, lightOutput is measured. Use forward voltage values and the light output valve measured, for example by outside operational part 3,Detection unit 4 carries out the quality of the temperature characterisitic of semiconductor light-emitting elements 2 and judges.
Here dress is measured in the output of operational part 3, the detection unit 4 apply/voltage determination that can be included in electric current ,/lightPut the inside of 1A, also one of them can be included in to inside. In addition, operational part 3 also can by fromThe voltage waveform former state of voltage detection department output is input in detection unit 4. In addition, also can be at operational partIn 3, calculate desirable physical quantity, and its result is input to detection unit 4. For example, also can be to inspectionThe voltage waveform of measuring carries out differential, and generate differentiated waveform, and this differentiated waveform is input to detection unit 4,Judge the quality of semiconductor light-emitting elements 2. For example, also can use the magnitude of voltage and the light output that detectValue calculates power efficiency, and this power efficiency is outputed to detection unit 4, judges semiconductor light-emitting elements 2Quality.
And then, also can be by luminous (light output) wavelength and above-mentioned judgement of being measured by wavelength test section 14Result combination, the quality of the semiconductor light-emitting elements 2 that judgement precision is higher. This is to have adopted emission wavelengthSide-play amount. Thus, can improve at short notice the precision that temperature characterisitic checks. Be not limited to this, examineConsider the impact of noise etc., in the situation that this side-play amount is in prescribed limit, also can be not as substandard products andBe judged as non-defective unit.
Fig. 7 is the figure that represents the mensuration sequential of the temperature characterisitic inspection of embodiment 2. With reference to Fig. 7, withWhen mensuration sequential (hereinafter referred to as measuring sequential 1) in embodiment 1 compares to illustrate this mensurationOrder (hereinafter referred to as measuring sequential 2). Measure and apply current value from right in mensuration 1B, the 3B of sequential 2The current value 60mA that applies in mensuration 1A, the 3A of the mensuration sequence 1 of answering changes to 30mA.
Specifically, after initial electric current application time 1msec, while measuring 30mA energisingLight output valve Po_A (measuring 1B). Then,, after overcurrent application time 1msec, measure 1mAForward voltage Vf_A (measuring 2B) when energising. And then, after overcurrent application time 50msec,Measure light output valve Po_B (measure 3B) same with mensuration 1B. And with mensuration 2B thereafter similarlyMeasure forward voltage Vf_B (measuring 4B). In addition, the forward voltage Vf_B in mensuration 4B is owing to beingWithin the time very short from measuring 3B, measure, therefore can be approximated to be through overcurrent application timeForward voltage values after 50msec.
Fig. 8 is other examples that represent the measurement result of the potential difference Vfa of the forward voltage of non-defective unit/substandard productsFigure. Fig. 9 is the figure that represents the measurement result of the variable quantity Poa of the light output of the forward voltage of non-defective unit/substandard products.For this non-defective unit and substandard products, in apply at electric current/voltage determination/light output determinator 1A, in Fig. 7 instituteShow mensuration time ordered pair non-defective unit and substandard products measure respectively forward voltage and light output.
With reference to Fig. 8, suppose moment t=1.0msec and the moment t=50.0msec of the said determination timing of non-defective unitTime forward voltage Vf (t), waveform C1 represents its potential difference Vfa (=Vf (1.0)-Vf (t))Waveform. On the other hand, waveform C2 is potential difference the Vfa (=Vf that represents the forward voltage of substandard products too(1.0)-Vf (t)) waveform.
Then,, with reference to Fig. 9, suppose moment t=1.0msec and the moment of the said determination timing of non-defective unitLight output Po (t) when t=50.0msec, waveform D1 represents its variable quantity Poa (=Po (1.0)-Po (t)) waveform. On the other hand, waveform D2 is the variable quantity that represents the light output of substandard products tooThe waveform of Poa (=Po (1.0)-Po (t)).
Here, again identical for the temperature rise that makes to apply electric current and cause by Fig. 8, get non-defective unit and timeTime (msec) T1 and the T2 of the Vfa identical (in Fig. 8, for example, being made as Vfa=-0.03) of product.
Then, again by Fig. 9, the light output when time T 1 by relatively non-defective unit and substandard products and T2Variable quantity Poa1 and Poa2, thereby can make by applying the temperature rise that electric current causes identicalTemperature characterisitic inspection.
Thereby, as shown in Figure 9, by the variable quantity Poa=-3.0[mW of light output] and be set as a reference value Por,In the result of measuring, in the situation of the variable quantity Poa of actual light output lower than a reference value, also can sentenceBe decided to be non-defective unit. For example, the waveform D1 of Fig. 8 is subject to the judgement of non-defective unit.
As mentioned above, according to embodiment 1,2, can check at short notice semiconductor light-emitting elementsHot properties and do not use other thermals source of the temperature rise of semiconductor light-emitting elements.
Utilize this character, as the inspection method of the temperature characterisitic of semiconductor light-emitting elements, in the time of each mensurationBetween the variable quantity Poa of light output in the scope of a certain threshold value time, can be judged to be non-defective unit, and carry outQuality checks. For example,, by be set as-2mW of the scope～-4mW of the threshold value of the variable quantity Poa of light outputTime, in moment T2, also the mensuration test portion of waveform D2 can be judged to be to non-defective unit.
In addition, according to the present invention, owing to checking hot properties before encapsulation sealing, therefore can,Judge by carried out quality before encapsulation sealing, thereby reduce manufacturing cost.
In addition, according to the present invention, the spy of the operation of one of manufacturing process as semiconductor light-emitting elementsProperty checks in operation, for the semiconductor light-emitting elements being arranged on thin slice, needn't make to measure in platform temperatureRise and can carry out at short notice hot properties inspection.
Explained and exemplified with the present invention, but should understand clearly, this is only for illustrating,Not that scope of invention is explained by claim scope for limiting.
Claims (7)
1. a temperature characterisitic testing fixture for semiconductor light-emitting elements, comprising:
Electric current applying unit, applies forward current to semiconductor light-emitting elements;
Voltage detection department, described in by described electric current applying unit, described semiconductor light-emitting elements being applied continuouslyForward current, and detect the first forward voltage and the moment after described the first forward voltage second justTo voltage;
Light output detections portion, applies institute by described electric current applying unit continuously to described semiconductor light-emitting elementsState forward current, and detect the first light output and second light in the moment after described the first light output is defeatedGo out; And
Detection unit, the voltage difference of obtaining described the first forward voltage and described the second forward voltage becomes regulationBe worth required application time, export based on described the first light output and described the second light, obtain from described theThe detection of one light output rises until through the variable quantity of the light output of described application time, by by instituteState variable quantity and thereby reference light output valve compares the quality of judging described semiconductor light-emitting elements.
2. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 1, wherein,
While detection in the time being detected by described voltage detection department and by described smooth output detections portion, justTo the current value difference of electric current.
3. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 1 or 2, wherein,
At described variable quantity during lower than the absolute value of described reference light output valve, described in described detection unit is judgedSemiconductor light-emitting elements is non-defective unit, on the other hand, at described variable quantity higher than described reference light output valveWhen absolute value, described detection unit judges that described semiconductor light-emitting elements is as substandard products.
4. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 1 or 2, wherein,
In described variable quantity is the threshold range predetermining time, described detection unit is judged described semiconductorLight-emitting component is non-defective unit.
5. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 1 or 2, wherein,
Described temperature characterisitic testing fixture also comprises wavelength test section, for detection of described smooth output detections portionThe wavelength of output waveform,
In the time that the value of the difference of the first wavelength and second wave length is in the scope of the difference of predetermined reference wavelength, instituteState detection unit and judge that described semiconductor light-emitting elements is as non-defective unit, described the first wavelength is corresponding to described firstThe output of the described wavelength test section of light output, described second wave length is corresponding to described the second light outputThe output of described wavelength test section.
6. a temperature characterisitic inspection method for semiconductor light-emitting elements, comprising:
Semiconductor light-emitting elements is applied to the step of forward current;
Described semiconductor light-emitting elements is applied to described forward current continuously, and detect the first forward voltage andThe step of second forward voltage in the moment after described the first forward voltage;
Described semiconductor light-emitting elements is applied to described forward current continuously, and detect the first light output andThe step of the second light output in the moment after described the first light output;
It is required that the voltage difference of obtaining described the first forward voltage and described the second forward voltage becomes settingApplication time, based on described the first light output and described the second light output, obtains from described the first light outputDetection rise until through the step of the variable quantity of the light output of described application time; And
By described variable quantity and reference light output valve are compared and judge described semiconductor light-emitting elementsFor the step of non-defective unit or substandard products.
7. the temperature characterisitic inspection method of semiconductor light-emitting elements as claimed in claim 6, wherein,
Detect the second forward electricity in described the first forward voltage and the moment after described the first forward voltageThe step of pressing and detect described the first light output and second light in moment after described the first light outputIn the step of output, the current value difference of forward current.
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| JP2012038968A JP2012216779A (en) | 2011-03-25 | 2012-02-24 | Temperature characteristic inspection device of semiconductor light-emitting element and temperature characteristic inspection method |
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| JP6449830B2 (en) * | 2016-10-11 | 2019-01-09 | 日機装株式会社 | Test apparatus and light emitting device manufacturing method |
| JP2022092972A (en) * | 2020-12-11 | 2022-06-23 | 東京エレクトロン株式会社 | Heating device and LED control method |
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| JP2002156402A (en) * | 2000-11-20 | 2002-05-31 | Sanken Electric Co Ltd | Method and apparatus for inspecting characteristic of semiconductor element |
| CN1330970C (en) * | 2003-11-14 | 2007-08-08 | 佛山市国星光电科技有限公司 | Method for testing power type LED thermal resistance and special purpose chip thereof |
| CN102183546B (en) * | 2010-01-19 | 2014-12-24 | 财团法人工业技术研究院 | Detection device and method for package interface of light emitting diode |
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