CN102693925A - Temperature characteristic detection apparatus of semiconductor light emitting element and temperature characteristic detection method - Google Patents
Temperature characteristic detection apparatus of semiconductor light emitting element and temperature characteristic detection method Download PDFInfo
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- CN102693925A CN102693925A CN2012100821803A CN201210082180A CN102693925A CN 102693925 A CN102693925 A CN 102693925A CN 2012100821803 A CN2012100821803 A CN 2012100821803A CN 201210082180 A CN201210082180 A CN 201210082180A CN 102693925 A CN102693925 A CN 102693925A
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Abstract
Disclosed are a temperature characteristic detection apparatus of a semiconductor light emitting element and a temperature characteristic detection method. The temperature characteristic detection apparatus comprises a current applying / voltage detecting device and a semiconductor light emitting element to be detected. The current applying / voltage detecting device comprises a current applying portion and a voltage detecting portion. For example, the current applying / voltage detecting device can be a chip probe, the probe is aligned to the semiconductor light emitting element in a wafer state for current applying and voltage detecting. The temperature characteristic of the semiconductor light emitting element is determined through the forward voltage value and the light output value and by external calculation portion and determination portion. Thereby the temperature characteristic detection apparatus of a semiconductor light emitting element and the temperature characteristic detection method are provided, wherein the chip area is not increased and the cost is low.
Description
Technical field
The present invention relates to the temperature characterisitic testing fixture and the temperature characterisitic inspection method of semiconductor light-emitting elements; Relate in particular to semiconductor light-emitting elements is continuously applied forward current and measures the forward voltage of semiconductor light-emitting elements, thus the apparatus and method of inspection temperature characterisitic.
Background technology
In recent years, for the three primary colors of realizing light are red, green, blue, the appearance of expectation blue LED (Light emmiting diode:LED) (below, be also referred to as blue led).Nineteen ninety for having invented nitride-based blue led, use the market of the product of LED to expand the various illuminations of backlight, family expenses of the backlight and liquid crystal TV set of LCD monitor to from signal.The suitable machine of price range appears in the liquid crystal TV set that LED-backlit has been installed, and popularizes rapidly.
Semiconductor light-emitting-diode is being appealed saving source, energy-conservation current, from the viewpoint of the saving of resource, energy, also the more high efficiency light-emitting diode of exploitation is entertained very big expectation.
And then; In order to obtain high efficiency blue led; Promptly checking in the operation as the operation of one of manufacturing process of semiconductor light-emitting elements (for example, blue led), implementing high-temperature temperature characteristic check operation; In high-temperature temperature characteristic check operation, make to be examined semiconductor light-emitting elements and to rise to maximum functional and guarantee to test its electrical characteristic near the temperature.At this moment,, place in the thermostat through being examined semiconductor light-emitting apparatus as being examined the method that semiconductor light-emitting elements maintains high temperature, environment temperature is risen to set point of temperature till, remain on high temperature thereby will be examined semiconductor light-emitting elements.
But, though the thermostat of above-mentioned use can carry out temperature control easily, conversely, the shortcoming that the expense that exists equipment to spend increases.And, there be the shortcoming consuming time in order to promote temperature.
Therefore, a kind of method of not using thermostat and using the spontaneous heating of semiconductor light-emitting elements to carry out the hot properties inspection is proposed.
For example; (Japan) spy opens and has proposed following method in the flat disclosed technology of 8-101250 communique: through making semiconductor element itself heating the becoming high temperature with output transistor; Thereby do not use thermostat and carry out the hot properties inspection; Wherein the lead-out terminal of this output transistor is opener (オ one プ Application コ レ Network タ), and this output transistor comprises the parasitic diode between earth terminal and the power supply feeding terminal.
In addition, (Japan) spy opens in the flat disclosed technology of 9-128996 communique and has proposed following method: in compensated semiconductor's element, indefinite through clock input terminal is made as; Thereby flow through perforation electric current; Make himself heating thus, the temperature sensor on the surface through being arranged on compensated semiconductor's element is observed the surface temperature of compensated semiconductor's element, if reach the temperature of regulation; Then clock input terminal is imported the clock that uses in the common high temperature inspection, and carry out the hot properties inspection.
But; Open in the flat disclosed hot properties inspection method of 8-101250 communique the spy; Need to be provided with in addition have lead-out terminal be opener and comprise earth terminal and the power supply feeding terminal between heater element output transistor, that be used to make self-heating of parasitic diode, can cause the increase of chip area.
In addition, open in the flat disclosed hot properties inspection method of 9-128996 communique, be defined as compensated semiconductor's element, can't be applied to beyond compensated semiconductor's element the spy.And, in this inspection method,,, needing temperature sensor and measuring and controlling though therefore do not need thermostat to wait thermal part owing to pass through the surface temperature of temperature sensor measurement experiment apparatus, it is complicated that the structure of testing fixture becomes.In addition, make self-heating thereby flow through perforation electric current in inside in order to reach a high temperature, therefore different with the situation of using heater blocks such as thermostat, reach time-consuming till the temperature of regulation.
Summary of the invention
The object of the present invention is to provide and do not increase chip area and can be in a kind of hot properties inspection at semiconductor light-emitting elements with the hot properties inspection method of the semiconductor light-emitting elements of implemented with low cost.In addition, purpose is to provide a kind of does not need device such as temperature sensor and thermostat and realizes the method for hot properties inspection at short notice.
The present invention mainly comprises: electric current applies portion, and semiconductor light-emitting elements is applied forward current; Voltage detection department applies portion through electric current semiconductor light-emitting elements is applied forward current continuously, and detects second forward voltage in first forward voltage and the moment after first forward voltage; And detection unit, based on the quality of first forward voltage and second forward voltage judgement semiconductor light-emitting elements.
Preferably be applied to semiconductor light-emitting elements continuously at forward current, and the 3rd forward voltage in second forward voltage and the moment after second forward voltage is in the threshold range of regulation the time, detection unit judges that semiconductor light-emitting elements is a non-defective unit.
Preferably by detected second forward voltage of voltage detection department and the 3rd forward voltage be after the electric current portion of applying begins to apply semiconductor light-emitting elements 30.0msec to detected forward voltage the 200.0msec.
Preferably when the difference of the voltage of first forward voltage and second forward voltage was in the scope of predetermined reference voltage difference, detection unit judged that semiconductor light-emitting elements is a non-defective unit.
The present invention comprises on the other hand: electric current applies portion, and semiconductor light-emitting elements is applied forward current; Light output/wavelength test section applies portion through electric current semiconductor light-emitting elements is applied forward current continuously, and detects the first light output/wavelength and the second light output/wavelength in the moment after the output of first light; Voltage detection department detects second forward voltage in first forward voltage and the moment after first forward voltage; Judge the detection unit of the quality of semiconductor light-emitting elements based on the first light output/wavelength and the second light output/wavelength; And the detection unit of judging the quality of semiconductor light-emitting elements based on first forward voltage and second forward voltage.
Preferably when the difference of first light output and the output of second light was in the scope of the difference of predetermined reference light output valve, detection unit judgement semiconductor light-emitting elements was a non-defective unit.
Preferably when the difference of first light output and the output of second light and the light output valve obtained by first forward voltage and second forward voltage was in the scope of the difference of predetermined reference light output valve, detection unit judgement semiconductor light-emitting elements was a non-defective unit.
And then preferred temperature characterisitic testing fixture also comprises the wavelength test section; Be used to detect the wavelength that light is exported the output waveform of test section; When the value of the difference of first wavelength and second wavelength is in the scope of the difference of predetermined reference wavelength; Detection unit judges that semiconductor light-emitting elements is a non-defective unit, and first wavelength is the output corresponding to the wavelength test section of first light output, and second wavelength is the output corresponding to the wavelength test section of second light output.
The present invention comprises on the other hand: the step that semiconductor light-emitting elements is applied forward current; Semiconductor light-emitting elements is applied forward current continuously, and detect the step of second forward voltage in first forward voltage and the moment after first forward voltage; And judge that based on first forward voltage and second forward voltage semiconductor light-emitting elements is the step of non-defective unit.
Preferably in the step of judging, be applied to semiconductor light-emitting elements continuously at forward current, and the 3rd forward voltage in second forward voltage and the moment second forward voltage after is in the threshold range of stipulating the time, the judgement semiconductor light-emitting elements is a non-defective unit.
The present invention comprises on the other hand: the step that semiconductor light-emitting elements is applied forward current; Semiconductor light-emitting elements is applied forward current continuously, and detect the step of second forward voltage in first forward voltage and the moment after first forward voltage; Semiconductor light-emitting elements is applied forward current continuously, and detect the step of second light output in the output of first light and the moment after the output of first light; And be the step of non-defective unit with second light output judgement semiconductor light-emitting elements based on first light output.
Thereby major advantage of the present invention is not use other thermals source that the temperature that makes semiconductor light-emitting elements rises and can checks the hot properties of semiconductor light-emitting elements at short notice.
In addition, other advantages of the present invention are therefore can judge through before the encapsulation sealing, carrying out quality, thereby reduce manufacturing cost owing to can before the encapsulation sealing, check hot properties.
In addition; Other advantages of the present invention are in the characteristic check operation as the operation of one of manufacturing process of semiconductor light-emitting elements; For the semiconductor light-emitting elements that is arranged on the thin slice, needn't make the temperature rising of measuring platform and can carry out the hot properties inspection at short notice.
The following detailed description that the present invention above-mentioned and other purposes, characteristic, aspect and the related understanding with accompanying drawing of advantage basis of the present invention is correlated with becomes clear.
Description of drawings
Fig. 1 is the block diagram of the temperature characterisitic testing fixture 10 of semiconductor light-emitting elements.
Fig. 2 is that expression is applied/figure of the electric current that voltage measuring device applies by electric current.
Fig. 3 is the figure of the mensuration sequential of the temperature characterisitic inspection in the expression execution mode 1.
Fig. 4 is the figure of the relation of light output valve Po and the positive current values IF of expression through the semiconductor light-emitting elements of said method under 25 ℃, 80 ℃ of two kinds of standard test portions.
Fig. 5 is mensuration result's the figure of potential difference Vfa of the forward voltage of expression non-defective unit/substandard products.
Fig. 6 is the block diagram of the temperature characterisitic testing fixture 10A of semiconductor light-emitting elements.
Fig. 7 is the figure of the mensuration sequential of the temperature characterisitic inspection in the expression execution mode 2.
Fig. 8 is the mensuration figure of other examples as a result of potential difference Vfa of the forward voltage of expression non-defective unit/substandard products.
Fig. 9 is mensuration result's the figure of variable quantity Poa of light output of the forward voltage of expression non-defective unit/substandard products.
Embodiment
With reference to description of drawings execution mode of the present invention.In addition, in the accompanying drawing of following institute reference, for same or suitable parts additional phase number together with it.
[execution mode 1]
Fig. 1 is the block diagram of the temperature characterisitic testing fixture 10 of semiconductor light-emitting elements.With reference to Fig. 1, temperature characterisitic testing fixture 10 comprises that electric current applies/semiconductor light-emitting elements 2 of voltage measuring device 1 and determination object.Electric current applies/and voltage measuring device 1 comprises that electric current applies portion 11, voltage detection department 12.Electric current applies/and voltage measuring device 1 for example is a chip probe, the electrode of the semiconductor light-emitting elements 2 of probe alignment wafer state is carried out electric current applies, voltage determination.Use forward voltage values and the light output valve measured, for example the quality judgement of the operational part 3 through the outside, temperature characterisitic that detection unit 4 carries out semiconductor light-emitting elements 2.
Here, operational part 3, detection unit 4 can be included in electric current and apply/inside of voltage measuring device 1, also can one of them be included in inside.In addition, operational part 3 also can be input to the voltage waveform former state from voltage detection department output the detection unit 4.In addition, also can in operational part 3, calculate desirable physical quantity, and its result is input to detection unit 4.For example, also can carry out differential, generate differentiated waveform, and this differentiated waveform is input to detection unit 4, judge the quality of semiconductor light-emitting elements 2 detected voltage waveform.
Fig. 2 is that expression is applied/figure of the electric current that voltage measuring device applies by electric current.With reference to Fig. 2, the longitudinal axis representes to apply current value, the transverse axis express time.Apply electric current before certain hour, can certain electric current be continuously applied semiconductor light-emitting elements 2.
In addition, be not limited to the mensuration sequential that applies certain electric current as Fig. 2, also can use the mensuration sequential as Fig. 3 to measure forward voltage and light output.
Fig. 3 is the figure of the mensuration sequential of expression temperature characterisitic inspection.With reference to Fig. 3, measure in the sequential at this, initial, behind overcurrent application time 1msec, the light output valve Po_A when measuring the 60mA energising (measuring 1A).Then, behind overcurrent application time 1msec, the forward voltage Vf_A when measuring the 1mA energising (measuring 2A).And then, behind overcurrent application time 50msec, measure light output valve Po_B (measuring 3A) equally with mensuration 1A.And likewise measure forward voltage Vf_B (measuring 4A) with thereafter mensuration 2A.In addition, measure the forward voltage Vf_B among the 4A owing to be to measure in the very short time from measuring 3A, therefore can be approximated to be the forward voltage values behind overcurrent application time 50msec.
In this sequential is measured, measure Po value and Vf value simultaneously.If the change time is measured, then estimate variations in temperature (ascending temperature) from the variable quantity (Δ Vf) of Vf value.Ascending temperature is identical to be eliminated the deviation of ascending temperature through making with other chip comparisons the time, thereby measures the temperature characterisitic of light output valve.
As rising and it should be noted that because the deviation of the internal resistance that led chip has, even switch on the identical time, the rising value Δ Tj of junction temperature Tj also can deviation when measuring temperature characterisitic utilizing through led chip being applied continuously junction temperature Tj that electric current causes.In order to make Δ Tj is that certain value is measured temperature characterisitic (in order to eliminate deviation), uses the variation delta Vf of the Vf value when applying electric current 1mA energising.In general, the Vf of led chip is the parameter that depends on junction temperature Tj, and this characteristic is straight line in applying the small zone of current value (for example 1mA), thereby therefore estimates junction temperature Tj through measuring Vf.This junction temperature Tj is suc as formula shown in (1).
Tj＝Ta+ΔVf/m...(1)
Here, temperature T a representes environment temperature, and Δ Vf representes voltage difference, and constant m representes temperature coefficient.In addition, known constant m is about 2 in applying the small zone of electric current (for example 1mA).
Before carrying out actual temperature characterisitic inspection, need obtain mensuration result as the standard test portion of index.Its assay method is by resin semiconductor light-emitting elements to be fixed on the silvering stem (silver-colored コ one ト ス テ system); And the structure of having carried out wire-bonded is arranged on the warm table; Make temperature rise to temperature desired (25 ℃, 80 ℃); By the time semiconductor element and warm table become till the thermal equilibrium state, thereby carry out the method for characteristic measurement.
Fig. 4 is the figure of the relation of light output valve Po and the positive current values IF of expression through the semiconductor light-emitting elements of said method under 25 ℃, 80 ℃ of two kinds of standard test portions.
With reference to Fig. 4, waveform A1 is that light output valve Po does not rely on positive current values IF and temperature and gets the roughly waveform of certain value.That is, be the waveform of the semiconductor light-emitting elements of good temp characteristic.
On the other hand, waveform A2 depends on positive current values IF, temperature, and light output valve Po increases along with positive current values IF and the waveform that significantly reduces.That is, be the waveform of the semiconductor light-emitting elements of characteristic difference.Can select corresponding to the good element of the characteristic of waveform A1 (below be also referred to as non-defective unit) with corresponding to the element of the difference of waveform A2 (below be also referred to as substandard products).
Fig. 5 is mensuration result's the figure of potential difference Vfa of the forward voltage of expression non-defective unit/substandard products.For this non-defective unit and substandard products, apply at electric current/voltage measuring device 1 in, what be continuously applied certain electric current as shown in Figure 2 applies current value 30 [mA].When applying, non-defective unit and substandard products are measured forward voltage Vf.As the timing that measure this moment, get t=1.0,10.0,20.0,30.0,50.0,80.0,100.0,200.0 (msec), measure forward voltage respectively for non-defective unit and substandard products.
With reference to Fig. 5, suppose the said determination moment t=1.0msec regularly of non-defective unit and the forward voltage Vf (t) during t constantly arbitrarily, then waveform B 1 is to represent the waveform of its potential difference Vfa (=Vf (1.0)-Vf (t)).On the other hand, waveform B 2 is the waveform of potential difference Vfa (=Vf (1.0)-Vf (t)) of the forward voltage of expression substandard products too.
Waveform B 1 (situation of non-defective unit) and B2 (situation of substandard products) did not almost have difference on potential difference Vfa before moment t=30.0 (msec).But, after moment t=30.0 (msec), the size variation of potential difference Vfa.Specifically, in waveform B 1 (situation of non-defective unit), even increase the electric current application time, behind certain certain hour, potential difference Vfa also gets certain value.On the other hand, in the waveform B 2 (situation of substandard products), because the electric current application time increases, potential difference Vfa further increases (waveform B 2 descends).
Utilizing this character, as the inspection method of the temperature characterisitic of semiconductor light-emitting elements, is in a certain threshold range time at the potential difference Vfa of each minute, is judged to be non-defective unit, can carry out the quality inspection.For example, the later potential difference Vfa of the moment t=50.0msec in the waveform B 1 about equally, on the other hand, under the situation of waveform B 2, potential difference Vfa is unequal.At this moment, the mensuration test portion with waveform B 1 is judged to be non-defective unit.
And then as the decision method that the temperature characterisitic of semiconductor light-emitting elements is checked, the size (fiducial value) according to predetermined potential difference Vfa under the situation less than this fiducial value, is defined as non-defective unit, can carry out the quality inspection.For example shown in Figure 5, potential difference Vfr=-0.035 [V] is set at fiducial value, the result of mensuration is to be lower than under the situation of potential difference of fiducial value at the potential difference Vfa of reality, also can be judged to be non-defective unit.For example, the waveform B 1 of Fig. 5 receives the judgement of non-defective unit.
In addition; In the temperature characterisitic inspection of reality; Also can utilize as measuring regularly any forward voltage Vf of timing of after semiconductor light-emitting elements 2 is begun to apply electric current certain till 30.0～200.0 (msec), judge the quality of semiconductor light-emitting elements.
Certainly, carrying out below the moment t=30.0 (msec) under the situation of inspection as measuring timing, potential difference Vfa is low, becomes the error of testing fixture easily, lacks the validity of quality inspection.In addition, regularly be made as under the situation of having carried out inspection constantly more than the t=200.0 (msec) will measuring, the quality inspection is consuming time, can not check at short notice.
[execution mode 2]
Fig. 6 is the block diagram of the temperature characterisitic testing fixture 10A of semiconductor light-emitting elements.With reference to Fig. 6, temperature characterisitic testing fixture 10A comprises electric current and applies/semiconductor light-emitting elements 2 of voltage determination/light output determinator 1A and determination object.Electric current applies/and voltage determination/light output determinator 1A comprises that electric current applies portion 11, voltage detection department 12, light output test section 13, wavelength test section 14.That is, temperature characterisitic testing fixture 10A also comprises light output test section 13, wavelength test section 14 in the structure of the temperature characterisitic testing fixture 10 of execution mode 1.Measure the wavelength of the light output of light output test section 13 outputs by wavelength test section 14.Electric current applies/voltage determination/light output determinator 1A for example is a chip probe, with the electrode of the semiconductor light-emitting elements 2 of probe alignment wafer state carry out that electric current applies, voltage determination, light output measure.Use forward voltage values and the light output valve measured, for example the quality judgement of the operational part 3 through the outside, temperature characterisitic that detection unit 4 carries out semiconductor light-emitting elements 2.
Here, operational part 3, detection unit 4 can be included in electric current and apply/inside of voltage determination/light output determinator 1A, also can one of them be included in inside.In addition, operational part 3 also can be input to the voltage waveform former state from voltage detection department output the detection unit 4.In addition, also can in operational part 3, calculate desirable physical quantity, and its result is input to detection unit 4.For example, also can carry out differential, generate differentiated waveform, and this differentiated waveform is input to detection unit 4, judge the quality of semiconductor light-emitting elements 2 detected voltage waveform.For example, also can use detected magnitude of voltage and light output valve to calculate power efficiency, and this power efficiency is outputed to detection unit 4, judge the quality of semiconductor light-emitting elements 2.
And then, also can the quality of the semiconductor light-emitting elements 2 that precision is higher be judged in luminous (light output) wavelength of being measured by wavelength test section 14 and the combination of above-mentioned result of determination.This is the side-play amount that has adopted emission wavelength.Thus, can improve the precision of temperature characterisitic inspection at short notice.Be not limited thereto, the influence of consideration of noise etc. under the situation of this side-play amount in prescribed limit, can not be judged as non-defective unit as substandard products yet.
Fig. 7 is the figure of mensuration sequential of the temperature characterisitic inspection of expression execution mode 2.With reference to Fig. 7, compare with mensuration sequential in the execution mode 1 (below be called measure sequential 1) this mensurations sequential (below be called mensuration sequential 2) is described.The mensuration 1B of mensuration sequential 2, the current value that applies among the 3B change to 30mA from the mensuration 1A of the mensuration sequence 1 of correspondence, the current value 60mA that applies the 3A.
Specifically, behind the initial electric current application time 1msec of process, the light output valve Po_A when measuring the 30mA energising (measuring 1B).Then, behind overcurrent application time 1msec, the forward voltage Vf_A when measuring the 1mA energising (measuring 2B).And then, behind overcurrent application time 50msec, measure light output valve Po_B (measuring 3B) equally with mensuration 1B.And likewise measure forward voltage Vf_B (measuring 4B) with thereafter mensuration 2B.In addition, measure the forward voltage Vf_B among the 4B owing to be to measure in the very short time from measuring 3B, therefore can be approximated to be the forward voltage values behind overcurrent application time 50msec.
Fig. 8 is mensuration result's the figure of other examples of potential difference Vfa of the forward voltage of expression non-defective unit/substandard products.Fig. 9 is mensuration result's the figure of variable quantity Poa of light output of the forward voltage of expression non-defective unit/substandard products.For this non-defective unit and substandard products, apply at electric current/voltage determination/light output determinator 1A in, ordered pair non-defective unit and substandard products are measured forward voltage respectively and light is exported when mensuration shown in Figure 7.
With reference to Fig. 8, the forward voltage Vf (t) when supposing the said determination moment t=1.0msec regularly of non-defective unit with t=50.0msec constantly, then waveform C1 is the waveform of expression its potential difference Vfa (=Vf (1.0)-Vf (t)).On the other hand, waveform C2 is the waveform of potential difference Vfa (=Vf (1.0)-Vf (t)) of the forward voltage of expression substandard products too.
Then, with reference to Fig. 9, the light output Po (t) when supposing the said determination moment t=1.0msec regularly of non-defective unit with t=50.0msec constantly, then waveform D1 is the waveform of expression its variable quantity Poa (=Po (1.0)-Po (t)).On the other hand, waveform D2 is the waveform of variable quantity Poa (=Po (1.0)-Po (t)) of the light output of expression substandard products too.
Here, once more through Fig. 8 for make apply temperature that electric current causes rise identical, time (msec) T1 and the T2 of the Vfa that gets non-defective unit and substandard products identical (in Fig. 8, for example being made as Vfa=-0.03).
Then, once more through Fig. 9, the variable quantity Poa1 and the Poa2 of the light output of the time T 1 through relatively non-defective unit and substandard products during with T2, thus can make through applying temperature that electric current the causes identical temperature characterisitic inspection of rising.
Thereby as shown in Figure 9, the variable quantity Poa=-3.0 [mW] that light is exported is set at fiducial value Por, and in the result who measures, the variable quantity Poa of actual light output is lower than under the situation of fiducial value, also can be judged to be non-defective unit.For example, the waveform D1 of Fig. 8 receives the judgement of non-defective unit.
As stated, according to execution mode 1,2, the hot properties of semiconductor light-emitting elements can be checked at short notice and other thermals source of not using the temperature of semiconductor light-emitting elements to rise.
Utilize this character,, in the scope of variable quantity Poa in a certain threshold value of the light output of each minute the time, can be judged to be non-defective unit, the going forward side by side bad inspection of acting charitably as the inspection method of the temperature characterisitic of semiconductor light-emitting elements.For example, be set in the scope with the threshold value of the variable quantity Poa of light output-2mW～-during 4mW, in moment T2, also can the mensuration test portion of waveform D2 be judged to be non-defective unit.
In addition, according to the present invention,, therefore can judge, thereby reduce manufacturing cost through before the encapsulation sealing, carrying out quality owing to can before the encapsulation sealing, check hot properties.
In addition; According to the present invention; In characteristic check operation,, needn't make and measure the platform temperature and rise and can carry out the hot properties inspection at short notice for the semiconductor light-emitting elements that is arranged on the thin slice as the operation of one of manufacturing process of semiconductor light-emitting elements.
At length explanation and illustration the present invention, but should understand clearly, this only is used for illustration, is not to be used for limiting, scope of invention is explained by the claim scope.
Claims (11)
1. the temperature characterisitic testing fixture of a semiconductor light-emitting elements comprises:
Electric current applies portion, and semiconductor light-emitting elements is applied forward current;
Voltage detection department applies portion through said electric current said semiconductor light-emitting elements is applied said forward current continuously, and detects first forward voltage and second forward voltage in the moment after said first forward voltage; And
Detection unit is judged the quality of said semiconductor light-emitting elements based on said first forward voltage and said second forward voltage.
2. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 1, wherein,
Be applied to said semiconductor light-emitting elements continuously at said forward current; And the 3rd forward voltage in said second forward voltage and the moment after said second forward voltage the regulation threshold range in the time, said detection unit judges that said semiconductor light-emitting elements is a non-defective unit.
3. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 2, wherein,
By detected said second forward voltage of said voltage detection department and said the 3rd forward voltage is detected forward voltage 30.0 milliseconds to 200.0 milliseconds after the said electric current portion of applying begins to apply said semiconductor light-emitting elements.
4. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 1, wherein,
When the difference of the voltage of said first forward voltage and said second forward voltage was in the scope of predetermined reference voltage difference, said detection unit judged that said semiconductor light-emitting elements is a non-defective unit.
5. the temperature characterisitic testing fixture of a semiconductor light-emitting elements comprises:
Electric current applies portion, and semiconductor light-emitting elements is applied forward current;
Voltage detection department applies portion through said electric current said semiconductor light-emitting elements is applied said forward current continuously, and detects first forward voltage and second forward voltage in the moment after said first forward voltage;
Light output test section applies portion through said electric current said semiconductor light-emitting elements is applied said forward current continuously, and detects the output of first light and second light output in the moment after said first light output; And
Detection unit is based on the quality of said first forward voltage and said second forward voltage and output of said first light and the said semiconductor light-emitting elements of said second light output judgement.
6. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 5, wherein,
In the scope of the difference of the reference light output valve that the difference of output of said first light and the output of said second light is being scheduled to the time, said detection unit judges that said semiconductor light-emitting elements is a non-defective unit.
7. the temperature characterisitic testing fixture of semiconductor light-emitting elements as claimed in claim 5, wherein,
In the scope of the difference of the reference light output valve that the value of the difference of the output of said first light and the output of said second light and the light output valve obtained by said first forward voltage and said second forward voltage is being scheduled to the time, said detection unit judges that said semiconductor light-emitting elements is a non-defective unit.
8. like the temperature characterisitic testing fixture of any one described semiconductor light-emitting elements of claim 5 to claim 7, wherein,
Said temperature characterisitic testing fixture also comprises the wavelength test section, is used to detect the wavelength that said light is exported the output waveform of test section,
When the value of the difference of first wavelength and second wavelength is in the scope of the difference of predetermined reference wavelength; Said detection unit judges that said semiconductor light-emitting elements is a non-defective unit; Said first wavelength is the output corresponding to the said wavelength test section of said first light output, and said second wavelength is the output corresponding to the said wavelength test section of said second light output.
9. the temperature characterisitic inspection method of a semiconductor light-emitting elements comprises:
Semiconductor light-emitting elements is applied the step of forward current;
Said semiconductor light-emitting elements is applied said forward current continuously, and detect the step of first forward voltage and second forward voltage in the moment after said first forward voltage; And
Judge that based on said first forward voltage and said second forward voltage said semiconductor light-emitting elements is the step of non-defective unit.
10. the temperature characterisitic inspection method of semiconductor light-emitting elements as claimed in claim 9, wherein,
In the step of said judgement; Be applied to said semiconductor light-emitting elements continuously at said forward current; And the 3rd forward voltage in said second forward voltage and the moment after said second forward voltage the regulation threshold range in the time, judge that said semiconductor light-emitting elements is a non-defective unit.
11. the temperature characterisitic inspection method of a semiconductor light-emitting elements comprises:
Semiconductor light-emitting elements is applied the step of forward current;
Said semiconductor light-emitting elements is applied said forward current continuously, and detect the step of first forward voltage and second forward voltage in the moment after said first forward voltage;
Said semiconductor light-emitting elements is applied said forward current continuously, and detect the step of the output of first light and second light output in the moment after said first light output; And
Judge that based on said first light output and the output of said second light said semiconductor light-emitting elements is the step of non-defective unit.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011067378 | 2011-03-25 | ||
| JP2011-067378 | 2011-03-25 | ||
| JP2012-038968 | 2012-02-24 | ||
| JP2012038968A JP2012216779A (en) | 2011-03-25 | 2012-02-24 | Temperature characteristic inspection device of semiconductor light-emitting element and temperature characteristic inspection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102693925A true CN102693925A (en) | 2012-09-26 |
| CN102693925B CN102693925B (en) | 2016-05-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109804258A (en) * | 2016-10-11 | 2019-05-24 | 日机装株式会社 | The manufacturing method of experimental rig and light emitting device |
| CN114630454A (en) * | 2020-12-11 | 2022-06-14 | 东京毅力科创株式会社 | Heating device and LED control method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002156402A (en) * | 2000-11-20 | 2002-05-31 | Sanken Electric Co Ltd | Method and apparatus for inspecting characteristic of semiconductor element |
| CN1544954A (en) * | 2003-11-14 | 2004-11-10 | 佛山市国星光电科技有限公司 | Method for testing power type LED thermal resistance and special purpose chip thereof |
| CN102183546A (en) * | 2010-01-19 | 2011-09-14 | 财团法人工业技术研究院 | Detection device and method for package interface of light emitting diode |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002156402A (en) * | 2000-11-20 | 2002-05-31 | Sanken Electric Co Ltd | Method and apparatus for inspecting characteristic of semiconductor element |
| CN1544954A (en) * | 2003-11-14 | 2004-11-10 | 佛山市国星光电科技有限公司 | Method for testing power type LED thermal resistance and special purpose chip thereof |
| CN102183546A (en) * | 2010-01-19 | 2011-09-14 | 财团法人工业技术研究院 | Detection device and method for package interface of light emitting diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109804258A (en) * | 2016-10-11 | 2019-05-24 | 日机装株式会社 | The manufacturing method of experimental rig and light emitting device |
| CN114630454A (en) * | 2020-12-11 | 2022-06-14 | 东京毅力科创株式会社 | Heating device and LED control method |
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| CN102693925B (en) | 2016-05-25 |
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