CN102221667A - Measuring apparatus and method for diode chip - Google Patents
Measuring apparatus and method for diode chip Download PDFInfo
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- CN102221667A CN102221667A CN2010101517430A CN201010151743A CN102221667A CN 102221667 A CN102221667 A CN 102221667A CN 2010101517430 A CN2010101517430 A CN 2010101517430A CN 201010151743 A CN201010151743 A CN 201010151743A CN 102221667 A CN102221667 A CN 102221667A
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Abstract
The invention discloses a measuring apparatus and method for a diode chip. The diode chip is provided on a thermal conduction element. The measuring apparatus firstly measures the instant starting current of the diode chip and measures a first temperature corresponding to the instant starting current of the thermal conduction element. After the operation of the diode chip starts, the measuring apparatus adjusts the temperature of the thermal conduction element to a second temperature such that the current of the diode chip equals to the instant starting current. The measuring apparatus calculates the attributes of the diode chip based on the practical power of the diode chip and the temperature difference between the first temperature and the second temperature.
Description
Technical field
The invention relates to a kind of measuring equipment and method for measurement of diode chip for backlight unit, and particularly relevant for a kind of measuring equipment and method for measurement that can exchange electrically driven (operated) diode chip for backlight unit in order to measurement.
Background technology
In recent years, and light emitting diode (Light Emitting Diode, LED) development of semiconductor is because the lifting of technology, make chip light emitting efficient significantly promote, also therefore be increased in the application of each side, for example use etc., significantly increased the scope of using from projection pen to illumination.In addition, LED has also that volume is little, the life-span is long, the low pollution and advantages such as low cost, has more characteristics such as the good and dynamic color control of color saturation on optical characteristics, therefore makes the LED correlation technique become the technology that attracts most attention at present.
Generally speaking, LED is widely known by the people and has more power saving compared with the conventional lights source exactly most, the littler advantage of environmental protection and volume more, the appearance of alternating current driving LED makes it more competitive on illuminator is used, but it is necessary equally in the face of the conversion efficiency low problem of chip electricity with light with direct-current drive LED, the chip of LED is still most input electric energy is converted to heat energy at present, and only small part is converted to light, so problems of excessive heat is still the main subject under discussion of LED technical development.Under the limited situation of present led chip luminescence efficiency, most power source conversion becomes heat, also makes heat generation density significantly promote.Problems of excessive heat has become the bottleneck of technical development.And being defined as the temperature (Junction Temperature) that led chip meets the face place, thermal resistance deducts environment temperature, again divided by the value of power input gained.This thermal resistance value is in the LED encapsulation, judges the standard of heat-sinking capability quality, if thermal resistance value is big more, the expression heat-sinking capability is poor more; Otherwise if thermal resistance value is more little, then heat-sinking capability is good more.So thermal resistance value provides a criterion.
In the LED encapsulation, often need do the qualification of maximum thermal resistance to heat dissipation element, so the measurement of element thermal resistance, there is its importance that its representativeness is also arranged.In the parameter of calculating thermal resistance, ambient temperature utilizes thermocouple (Thermo couple) can be easy to measure.For a heater element, its power input also is known, can calculate out.But in a complete encapsulation, just be difficult to directly measure the surface temperature that connects of chip, therefore generally need obtain chip and connect surface temperature with a kind of indirect electrical method for measurement.If the method can rapid and precise measurement verify that the heat of element passes characteristic and hot influence to optical characteristics, the heat that will help to promote led chip passes design and checking, reaches effective radiating effect.
The situation that the alternating current driving LED is identical with direct-current drive LED is all can't directly measure to obtain the chip contact temperature, all must convert and obtain with the electrical method for measurement of indirect, it is because the power supply of input is an alternating current that but the thermal resistance method for measurement of alternating current driving LED is different from direct-current drive LED, the voltage and the non-certain value of electric current of input, and be a sinusoidal period ripple, so method for measurement will be different with direct-current drive LED.The foundation of alternating current driving LED packaging thermal resistance measurement technology will help to promote the package cooling design of alternating current driving LED.
TaiWan, China patent 200925571 discloses a kind of device that measures LED characteristic and chip temperature, and its measurement process mainly contains two steps.First step is to utilize the electric current of conductive form and input pulse form to measure TSP (the Temperature Sensitive Parameter) calibration curve of its bias value and temperature.Second step is the magnitude of voltage that measures under the practical operation situation, utilizes TSP calibration curve conversion light-emitting diode chip for backlight unit temperature and packaging thermal resistance value again.But this Apparatus and method for is only to measure direct-current drive LED.In addition, this preceding case only is confined to measure the direct supply light emitting diode, and also no-trump light, heat and electric three specific character method for measurement combine.
U. S. application number of patent application US0815403043 discloses the method for measurement that connects surface temperature of an alternating current driving LED, its method for measurement is the light-emitting diode heat resistance method for measurement with reference to direct supply, and just alternating-current light emitting diode is that mode with input ac voltage measures.Its measurement process mainly contains two stages.In the phase one measurement step, give LED one trigger voltage earlier, control different LED substrate temperature, and electric current and the substrate temperature of measurement LED are to obtain the family curve of LED.In the subordinate phase measurement step, the small resistance of then connecting in addition operating the input of specified alternating voltage practically, and utilizes the data acquisition module of two-way to obtain the resistance value of resistance and the magnitude of voltage of alternating current simultaneously.Afterwards again by the magnitude of voltage of the trigger voltage of finding out LED in the voltage waveform and the resistance that corresponded to thereof, to be converted into current value.In addition, the current change quantity of the current value after obtaining its initial current value again and reaching thermal equilibrium obtains its temperature variation to convert according to above-mentioned family curve.And above-mentioned temperature variation is added initial temperature value, is the diode junction temperature.
Case patent relatively though TaiWan, China patent 200925571 possesses the function of rapid measuring light-emitting diode heat resistance, only is confined to measure the direct supply light emitting diode, and also no-trump light, heat and electric three specific character method for measurement combine.Though U. S. application number of patent application US0815403043 method for measurement can measure the AC power light emitting diode, but measuring program complexity, need two stage steps, and needing in addition when carrying out second step, resistance of serial connection measures, and the resistance sizes difference will influence measurement, again because of being difficult for judging the resistance of selecting which kind of resistance, so it has many variablees and inconvenience on measuring.
Summary of the invention
The invention provides a kind of measuring equipment and method for measurement thereof of diode chip for backlight unit, it can accurately and apace measure the electrical characteristics of diode chip for backlight unit under certain temperature.
The present invention proposes a kind of method for measurement of diode chip for backlight unit.Above-mentioned method for measurement comprises this diode chip for backlight unit is arranged on the heat-conduction component.Afterwards, voltage is applied to this diode chip for backlight unit, and by the moment starting current of this diode chip for backlight unit of current measurement unit measuring, and is first temperature by the temperature that the measuring temp element measures this heat-conduction component.After this voltage was applied to this diode chip for backlight unit, beginning was controlled the temperature of this heat-conduction component by temperature control modules, till the electric current of this current measurement this diode chip for backlight unit that the unit measures equals this starting current moment.After the temperature of this heat-conduction component of control, if the electric current of this current measurement this diode chip for backlight unit that the unit measures equals this starting current moment, then the temperature that measures this heat-conduction component by this measuring temp element is second temperature.
The method for measurement of described diode chip for backlight unit more comprises:
Calculate the real power of this diode chip for backlight unit when applying this voltage;
This first temperature is deducted this second temperature, in the hope of the temperature difference between this first temperature and this second temperature; And
With this temperature difference divided by this real power, in the hope of a thermal resistance value of this diode chip for backlight unit.
This voltage is alternating voltage, and the electric current of this diode chip for backlight unit that is measured and this moment starting current be rms current.
This voltage is DC voltage.
This diode chip for backlight unit has at least one light emitting diode.
The present invention proposes a kind of measuring equipment.Above-mentioned measuring equipment comprises heat-conduction component, voltage source, current measurement unit, measuring temp element and temperature control modules.Described heat-conduction component is suitable for being provided with above-mentioned diode chip for backlight unit.Described voltage source is suitable for voltage is applied to above-mentioned diode chip for backlight unit.Described current measurement unit is suitable for when voltage source applies voltage at diode chip for backlight unit, measures the electric current of diode chip for backlight unit.Described measuring temp element is suitable for measuring the temperature of heat-conduction component.Described temperature control modules is suitable for controlling the temperature of heat-conduction component.Wherein when voltage source begins to apply voltage at diode chip for backlight unit, the moment starting current of the above-mentioned diode chip for backlight unit of current measurement unit measuring, and the temperature that the measuring temp element measures above-mentioned heat-conduction component is first temperature.Wherein after above-mentioned voltage was applied to diode chip for backlight unit, temperature control modules began the temperature of above-mentioned heat-conduction component is controlled to second temperature, so that the electric current of above-mentioned current measurement diode chip for backlight unit that the unit measures equals above-mentioned moment starting current.Above-mentioned second temperature is not equal to first temperature.
In one embodiment of this invention, above-mentioned measuring equipment calculates the real power of diode chip for backlight unit when applying above-mentioned voltage, and first temperature is deducted second temperature in the hope of the temperature difference between first temperature and second temperature, and with the said temperature difference divided by the thermal resistance value of above-mentioned real power in the hope of diode chip for backlight unit.
In one embodiment of this invention, above-mentioned voltage is alternating voltage, and the electric current of the diode chip for backlight unit that is measured and moment starting current be rms current.
In one embodiment of this invention, above-mentioned voltage is DC voltage.
In one embodiment of this invention, above-mentioned diode chip for backlight unit has at least one light emitting diode.
Based on above-mentioned, the measuring equipment of diode chip for backlight unit of the present invention and method for measurement not only can be in order to measure the electrical characteristics with the diode chip for backlight unit of direct-current drive, also can be in order to measure to exchange the electrical characteristics of electrically driven (operated) diode chip for backlight unit.In addition, the present invention uses the temperature control of conductive form can reach quite fast and the control of high accurancy and precision, but and light, heat and the electrical characteristics of the different chip contact temperatures of rapid measuring.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the synoptic diagram according to the measuring equipment of one embodiment of the invention;
Fig. 2 is flow through when not applying voltages to the diode chip for backlight unit as yet electric current and the time relation figure of diode chip for backlight unit of the voltage source among Fig. 1;
Fig. 3 is flow through when beginning to apply voltages to the diode chip for backlight unit electric current and the time relation figure of diode chip for backlight unit of the voltage source among Fig. 1;
Fig. 4 is when the temperature of the control of the temperature control modules among Fig. 1 heat-conduction component, the electric current of diode chip for backlight unit and time relation figure;
Fig. 5 is the synoptic diagram according to the measuring equipment of another embodiment of the present invention.
Wherein, Reference numeral
100,500: measuring equipment
101,264: radiating module
102,266: temperature control component
104: heat-conduction component
105: insulation film
106: diode chip for backlight unit
107: pin
108: insulation cover
110: temperature controller
112: the power supply ammeter
114: the data read card
116: retaining element
118: the measuring temp element
258: integrating sphere
Embodiment
The embodiment of the invention can make the electrical characteristics of LED measure and measure with thermal characteristics to reach more complete, result fast and accurately.The method also can be in order to measure to exchange the electrical characteristics of electrically driven (operated) diode chip for backlight unit except measuring the electrical characteristics with the diode chip for backlight unit of direct-current drive.Below describe the present invention, but the present invention is not subject to illustrated embodiment for some embodiment.Again, also appropriate combination can be done mutually between the illustrated embodiment, the content of single embodiment need not be limited to.
Please refer to Fig. 1, Fig. 1 is the synoptic diagram according to the measuring equipment 100 of one embodiment of the invention.Consult Fig. 1,, can control temperature by a temperature control modules of measuring equipment 100 in order to reach temperature control.Above-mentioned temperature control modules can comprise a temperature control component 102, for example: well heater, thermoelectric cooling module etc.Wherein thermoelectric cooling module can cool the temperature to and be lower than room temperature, measures under the temperature lower than room temperature to allow measuring equipment 100.The thermal source that temperature control component 102 is taken out of (Heat source) can be reached stable heat radiation by radiating module (Thermal Module) 101, especially can take away the heat energy of thermoelectric cooling module when thermoelectric cooling module operates.Then do not need radiating module 101 if adopt well heater to heat again.Temperature control modules also comprises some control circuits in addition, and the control circuit of this class for example is a temperature controller 110, to reach temperature controlled effect.Temperature controller 110 can be proportion integration differentiation (proportional-integral-derivative, PID) controller, shut down reactor cooling (shutdown reactor cooling, SRC) controller such as controller.
The present invention more proposes a kind of measurement mode of utilizing heat conduction form (Thermal Conductive Type), and diode chip for backlight unit heating or refrigeration with to measuring reach desired temperature.For example be connected with temperature control component 102 by a heat-conduction component 104.So heat-conduction component 104 can be fast and the temperature of temperature control component 102 reach balance, obtain desired temperature.Heat-conduction component 104 for example is the structural sheet of structured metal layer with high heat-conduction coefficient, for example copper, bronze, aluminium etc.In an embodiment of the present invention, heat-conduction component 104 top layers are coated with the insulation film 105 of a high heat-conduction coefficient, and the material of insulation film 105 for example is that aluminium oxide, class bore carbon (Diamond-like carbon, DLC) film etc.The purpose of insulation film 105 is to utilize the characteristic of its electrical isolation, makes diode chip for backlight unit 106 have part to have influence on the accuracy of measurement from the phenomenon of heat-conduction component 104 leakages at its electric current of unlikely generation of when test.In addition, measuring equipment 100 can comprise a heat-insulating cover 108, is arranged on the heat-conduction component 105, to constitute a heat insulation space.For example available heat insulation silk flosses of insulation cover 108 and bakelite combine.
In the present embodiment, the diode chip for backlight unit 106 that test comprises at least one light emitting diode, and diode chip for backlight unit 106 is to drive with alternating current.Yet the present invention is not as limit, and for example in an embodiment of the present invention, the diode chip for backlight unit 106 that test does not include light emitting diode, and only has general non-diode that can be luminous.For example in another embodiment of the present invention, diode chip for backlight unit 106 is to drive with direct current again.In addition, the diode chip for backlight unit 106 that test for example can be attached on the heat-conduction component 104 by heat-conducting cream, and is in the insulated space in insulation cover 108, with preferable equilibrium temperature.Yet noticeable, insulation cover 108 is not indispensable element for the purpose of the present invention.In addition, in an embodiment of the present invention, measuring equipment 1 () 0 comprises two retaining elements 116, contacts with two pins 107 of diode chip for backlight unit 106 respectively, so that diode chip for backlight unit 106 is fixed on the heat-conduction component 104, and make the measurement personnel can promptly change diode chip for backlight unit 106.In addition, influence the result of the heat survey of diode chip for backlight unit 106 for fear of retaining element 116 because of absorbing light, in other embodiment of the present invention, retaining element 116 can be selected the material of white material for use, or plates barium sulphate on retaining element 116.Because of retaining element 116 can provide the mechanism design of the power supply of diode chip for backlight unit 106,, connect two pins 107 of voltage source 112 and diode chip for backlight unit 106 so can not need to weld in addition outlet.
Above-mentioned temperature control modules comprises a measuring temp element 118 in addition, is located at the junction of the substrate and the heat-conduction component 104 of diode chip for backlight unit 106, and places the below of diode chip for backlight unit 106, is used to detect the temperature of heat-conduction component 104.Basically, because of heat-conduction component 104 and insulation film 105 have high heat-conduction coefficient, so the temperature that measuring temp element 118 is measured except meeting equals the temperature of heat-conduction component 104, also can equal the substrate temperature of diode chip for backlight unit 106.Measuring temp element 118 can be thermocouple (thermocouple), thermistor (thermistor) or resistance temperature detector (Resistance Temperature Detector, RTD).
In the flow process that measures diode chip for backlight unit 106, can utilize above-mentioned temperature control modules that the substrate temperature of diode chip for backlight unit 106 and the temperature of heat-conduction component 104 are controlled at a certain equilibrium temperature earlier, for example: 25 ℃.At this moment, voltage source 112 does not apply a voltage to diode chip for backlight unit 106 as yet, and the surface temperature (junction temperature) that connects because of thermally equilibrated cause diode chip for backlight unit 106 can be identical with the temperature of heat-conduction component 104 again.Afterwards, voltage source 112 applies voltages to diode chip for backlight unit 106, so that diode chip for backlight unit 106 comes into operation.Begin to apply voltages to the baseline of diode chip for backlight unit 106 at voltage source 112, current measurement unit 114 measures the moment starting current of diode chip for backlight unit 106, and the temperature that measuring temp element 118 measures heat-conduction components 104 is one first temperature.In an embodiment of the present invention, if diode chip for backlight unit 106 is to drive with alternating current, the moment starting current of current measurement unit 114 diode chip for backlight unit that measures 106 root-mean-square value of first positive half-wave of electric current of diode chip for backlight unit 106 that can equal to flow through then.In other words, above-mentioned moment starting current is a rms current.Therefore diode chip for backlight unit 106 is not subjected to influence of thermal effect the time, so pairing current value when moment, starting current was connecing surface temperature and being first temperature of diode chip for backlight unit 106.
Please refer to Fig. 2 and Fig. 3, wherein Fig. 2 is flow through when not applying voltages to the diode chip for backlight unit 106 as yet electric current and the time relation figure of diode chip for backlight unit 106 of voltage source 112, and Fig. 3 is a voltage source 112 flow through when beginning to apply voltages to diode chip for backlight unit 106 electric current and the time relation figure of diode chip for backlight unit 106.Wherein, as shown in Figure 2, when voltage source 112 was not applied to diode chip for backlight unit 106 as yet, pairing current value was zero.Shown in figure three, the moment that measures diode chip for backlight unit 106 when current measurement unit 114, it can be according to t during starting current
1To t
2The current value of the diode chip for backlight unit that is detected 106 during this time calculate the rms current of diode chip for backlight unit 106, and resulting rms current is the moment starting current of diode chip for backlight unit 106.In addition, in the present invention one implements, if diode chip for backlight unit 106 is with direct voltage drive, then the current waveform that detected of current measurement unit 114 will can be not as shown in Figure 3, in the case, then can according to voltage source 112 begin to be applied to behind the diode chip for backlight unit 106 a Preset Time at interval, the electric current of the diode chip for backlight unit 106 that is measured calculates above-mentioned moment starting current.Wherein, above-mentioned Preset Time is at interval for example less than the millisecond grade.
After voltage was applied to diode chip for backlight unit 106, because of the cause of power consumption, the temperature of diode chip for backlight unit 106 can raise gradually.The cause that raises because of the temperature of diode chip for backlight unit 106 again, the electric current of diode chip for backlight unit 106 also can increase.For measuring the characteristic of diode chip for backlight unit 106, after voltage is applied to diode chip for backlight unit 106, above-mentioned temperature control modules begins to control the temperature of heat-conduction component 104, and the electric current of the diode chip for backlight unit 106 that is measured up to current measurement unit 114 equals till above-mentioned moment starting current.In addition, after the temperature Be Controlled of heat-conduction component 104, if the electric current of current measurement unit 114 diode chip for backlight unit that measures 106 equals above-mentioned moment starting current, then the temperature that measures the heat-conduction component 104 of this moment by measuring temp element 118 is one second temperature.Noticeable, if diode chip for backlight unit 106 is to drive with alternating voltage, the electric current of the diode chip for backlight unit 106 that then current measurement unit 114 measured also is its rms current.
Please refer to Fig. 4, Fig. 4 is when the temperature of temperature control modules control heat-conduction component 104, the electric current of diode chip for backlight unit 106 and time relation figure.In this enforcement, the moment starting current of the diode chip for backlight unit 106 that current measurement unit 114 is measured is 27.05732mA, and because the cause of thermal effect, the current boost of diode chip for backlight unit 106 is to about 28mA.Afterwards, temperature control modules begins to downgrade the temperature of heat-conduction component 104.Because of the decrease of temperature of heat-conduction component 104, the connecing surface temperature and also can descend of diode chip for backlight unit 106, and then make the electric current of diode chip for backlight unit 106 also and then descend.After the temperature of heat-conduction component 104 descends, if the electric current of the diode chip for backlight unit 106 that current measurement unit 114 is measured equals above-mentioned moment starting current, then the temperature of the heat-conduction component 104 that measured this moment of measuring temp element 118 is the second above-mentioned temperature.With Fig. 4 is example, begin to downgrade 500 seconds after the temperature of heat-conduction component 104 at temperature control modules, the electric current of diode chip for backlight unit 106 promptly equals the moment starting current of diode chip for backlight unit 106, and the temperature that this moment, measuring temp element 118 was measured is the second above-mentioned temperature.
In an embodiment of the present invention, current measurement unit 114 can calculate the real power (Real Power) of diode chip for backlight unit 106 when being applied in voltage, if the real power of diode chip for backlight unit 106 is with P
RealExpression, then real power P
RealCan represent by following equation:
P
apparent＝V
rms×I
rms (2)
Wherein, V (t) is for putting on the magnitude of voltage of diode chip for backlight unit 106 at time point t;
I (t) is the current value of the diode chip for backlight unit 106 of flowing through at time point t;
T is the current/voltage sample period, and in an embodiment of the present invention, if diode chip for backlight unit 106 is driven by alternating voltage, then T is the cycle of this alternating voltage;
P
ApparentApplied power for diode chip for backlight unit 106;
V
RmsVRMS voltage root mean square for diode chip for backlight unit 106;
I
RmsRms current value for diode chip for backlight unit 106;
PF is the power factor (Power Factor) of diode chip for backlight unit 106.
Afterwards, a counting circuit of measuring equipment 100 (not icon) or above-mentioned current measurement unit 114 can deduct the second above-mentioned temperature with the first above-mentioned temperature, in the hope of the temperature difference between first temperature and second temperature.For instance, if the first above-mentioned temperature is T
J, the second above-mentioned temperature is T
C, and above-mentioned temperature difference is Δ T, then:
ΔT＝T
J-T
C (3)
Afterwards, above-mentioned counting circuit or current measurement unit 114 with temperature difference Δ T divided by real power P
Real, in the hope of a thermal resistance value of diode chip for backlight unit 106.The thermal resistance value of supposing diode chip for backlight unit 106 equals R
JC, then:
Fig. 5 is the synoptic diagram according to the measuring equipment 500 of another embodiment of the present invention.Consult Fig. 5, the basic structure of present embodiment still with the structural similarity of Fig. 1, but insulation cover 108 can be changed into integrating sphere 258 and heat-conduction component 104 and fit together, and for example utilizes the chip fixed sturcture to fix diode chip for backlight unit, and it also can prevent the light leak of integrating sphere 258.Temperature control unit below heat-conduction component 104 for example includes temperature control component 102 and radiating module 101.So heat-conduction component 104 can be fast and temperature control component 102 reach uniform temp.Radiating module 101 cooperates temperature control component 102 to operate together in addition, reaches variation of temperature control.The electric current of diode chip for backlight unit for example can provide by power supply ammeter 112 in addition.Power supply ammeter 112 is read the magnitude of voltage of diode simultaneously.Also can increase data read card 114 more in addition, read magnitude of voltage more accurately.In addition, temperature controller 110 also can be controlled another temperature control component 266 simultaneously integrating sphere 258 is done temperature control except the temperature that can control temperature control component 102.Temperature control component 266 also cooperates radiating module 264 to operate together.
Present embodiment can the Fast Installation diode chip for backlight unit and power supply is provided, and need not weld the derivation line.Again integrating sphere is designed to heatable spheroid, can reaches control heat-conduction component operating temperature and control environment temperature, and then obtain the relation of optical characteristics and environment temperature (or heat-conduction component operating temperature).
The effect of integrating sphere, for example light that sends with the scattering light-emitting diode chip for backlight unit, and integration add stack up and get its optical characteristics, so allow the present invention also can measure the function of optical characteristics and thermal characteristics simultaneously.For example when being input as actual input current, doing optical characteristics and measure; When the input Weak current, do chip temperature and thermal resistance and measure.Integrating sphere can be designed as the function of thermostat characteristic, makes this device can do the control of environment temperature, with the optical characteristics of observation light emitting diode and the relation of environment temperature.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (10)
1. the method for measurement of a diode chip for backlight unit is characterized in that, comprising:
This diode chip for backlight unit is arranged on the heat-conduction component;
One voltage is applied to this diode chip for backlight unit, and by the starting current in a flash of this diode chip for backlight unit of current measurement unit measuring, and is one first temperature by the temperature that a measuring temp element measures this heat-conduction component;
After this voltage was applied to this diode chip for backlight unit, beginning was controlled the temperature of this heat-conduction component by a temperature control modules, till the electric current of this current measurement this diode chip for backlight unit that the unit measures equals this starting current moment; And
After the temperature of this heat-conduction component of control, if the electric current of this current measurement this diode chip for backlight unit that the unit measures equals this starting current moment, then the temperature that measures this heat-conduction component by this measuring temp element is one second temperature.
2. the method for measurement of diode chip for backlight unit according to claim 1 is characterized in that, more comprises:
Calculate the real power of this diode chip for backlight unit when applying this voltage;
This first temperature is deducted this second temperature, in the hope of the temperature difference between this first temperature and this second temperature; And
With this temperature difference divided by this real power, in the hope of a thermal resistance value of this diode chip for backlight unit.
3. the method for measurement of diode chip for backlight unit according to claim 1 is characterized in that, this voltage is alternating voltage, and the electric current of this diode chip for backlight unit that is measured and this moment starting current be rms current.
4. the method for measurement of diode chip for backlight unit according to claim 1 is characterized in that, this voltage is DC voltage.
5. the method for measurement of diode chip for backlight unit according to claim 1 is characterized in that, this diode chip for backlight unit has at least one light emitting diode.
6. the measuring equipment of a diode chip for backlight unit is characterized in that, comprising:
One heat-conduction component is used to be provided with this diode chip for backlight unit;
One voltage source is used for a voltage is applied to this diode chip for backlight unit;
One current measurement unit is used for measuring the electric current of this diode chip for backlight unit when this voltage source applies this voltage at this diode chip for backlight unit;
One measuring temp element is used to measure the temperature of this heat-conduction component; And
One temperature control modules is used to control the temperature of this heat-conduction component;
Wherein when this voltage source begins to apply this voltage at this diode chip for backlight unit, the starting current in a flash of this this diode chip for backlight unit of current measurement unit measuring, and the temperature that this measuring temp element measures this heat-conduction component is one first temperature;
Wherein after this voltage is applied to this diode chip for backlight unit, this temperature control modules begins the temperature of this heat-conduction component is controlled to one second temperature, so that the electric current of this current measurement this diode chip for backlight unit that the unit measures equals this starting current moment, and this second temperature is not equal to this first temperature.
7. the measuring equipment of diode chip for backlight unit according to claim 6, it is characterized in that, this measuring equipment calculates the real power of this diode chip for backlight unit when applying this voltage, this first temperature is deducted this second temperature in the hope of the temperature difference between this first temperature and this second temperature, and with this temperature difference divided by the thermal resistance value of this real power in the hope of this diode chip for backlight unit.
8. the method for measurement of diode chip for backlight unit according to claim 6 is characterized in that, this voltage is alternating voltage, and the electric current of this diode chip for backlight unit that is measured and this moment starting current be rms current.
9. the method for measurement of diode chip for backlight unit according to claim 6 is characterized in that, this voltage is DC voltage.
10. the method for measurement of diode chip for backlight unit according to claim 6 is characterized in that, this diode chip for backlight unit has at least one light emitting diode.
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| CN 201010151743 CN102221667B (en) | 2010-04-15 | 2010-04-15 | Measuring apparatus and method for diode chip |
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| CN 201010151743 CN102221667B (en) | 2010-04-15 | 2010-04-15 | Measuring apparatus and method for diode chip |
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| CN102221667B CN102221667B (en) | 2013-05-15 |
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| CN103630820A (en) * | 2013-12-03 | 2014-03-12 | 黑龙江省计量科学研究院 | High-power LED heat resistance measuring device and method of measuring high-power LED heat resistance thereby |
| CN104459568A (en) * | 2014-11-27 | 2015-03-25 | 深圳市华测检测技术股份有限公司 | LED chip detection and analysis system |
| CN104459506A (en) * | 2014-11-27 | 2015-03-25 | 深圳市华测检测技术股份有限公司 | Multipath detection system for LED chip |
| CN104459507A (en) * | 2014-11-27 | 2015-03-25 | 深圳市华测检测技术股份有限公司 | Multi-channel detecting system for detecting optical performance of LED chip |
| US9110125B2 (en) | 2012-08-14 | 2015-08-18 | Industrial Technology Research Institute | Method and apparatus for detecting relationship between thermal and electrical properties of semiconductor device |
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| CN113494968A (en) * | 2020-03-19 | 2021-10-12 | 长鑫存储技术有限公司 | Temperature measurement and temperature calibration method and temperature measurement system |
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| CN113494968A (en) * | 2020-03-19 | 2021-10-12 | 长鑫存储技术有限公司 | Temperature measurement and temperature calibration method and temperature measurement system |
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| CN102221667B (en) | 2013-05-15 |
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