CN102683253B - Method for improving line width measurement accuracy alignment of picture - Google Patents
Method for improving line width measurement accuracy alignment of picture Download PDFInfo
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- CN102683253B CN102683253B CN201210135984.5A CN201210135984A CN102683253B CN 102683253 B CN102683253 B CN 102683253B CN 201210135984 A CN201210135984 A CN 201210135984A CN 102683253 B CN102683253 B CN 102683253B
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Abstract
The invention discloses a method for improving line width measurement accuracy alignment of a picture. The method includes S1 arranging a picture structure provided with lines on a mask plate; S2 conducting wafer exposure on the mask plate to form an alignment picture at the junction position; S3 building automatic measurement program to conduct accuracy alignment on the alignment picture; and S4 automatically measuring the structure picture required by a wafer. The method for improving line width measurement accuracy alignment of the picture effectively enables SEM automatic measurement to be easy in focusing and greatly improves automatic measurement efficiency by means of the picture structure with separation lines, figures or letters.
Description
Technical field
The present invention relates to a kind of microelectronic technical field, particularly relate to a kind of method that can improve figure live width accuracy in measurement and aim at.
Background technology
During semiconductor chip manufactures, use mask aligner (scanner) to expose definition circuit figure, feature sizes (CD) is more and more less, and sweep electron microscope (SEM) is the capital equipment measuring characteristic size live width.Its image-forming principle is that electron beam irradiation is being measured on object, produces the secondary electron of varying number in different-shape region.Collect secondary electron signal and change into the image of characteristic size live width.When electron beam irradiation on a photoresist time, electron irradiation can be caused to damage to photoresist, cause photoetching offset plate figure to be out of shape, the measurement of effect characteristics size live width.Damaging the electron irradiation of photoresist to reduce, needing to set up measuring program and completing auto-measuring in production, wherein first step of measuring program will accurately be aimed at.
Along with the integrated level of semiconductor chip improves constantly, the characteristic size of transistor constantly narrows down to nanoscale, and production technology also becomes increasingly complex.The three-dimensional structure of various components and parts is broken down into the litho pattern of tens layers two dimension aborning.In order to reach good device performance, each litho pattern will have characteristic size live width accurately, Hitachi (Hitachi) scanning electron microscopy (SEM) is used to measure in current production, setting up in the program measured, the first step needs the aligning carrying out wafer, its object is that the graphic object of the relatively easy identification first finding exposure range (field) is as reference position, reference position is looked for mainly contain two kinds at present, one is inside field, find a figure, this method shortcoming is if measure figure on the left side of benchmark, so when measurement, measure the field that figure is considered to the left side, the method of a kind of alignment fiducials in field as shown in Figure 1, 1 for measuring figure, 2 is benchmark.
The second is at field intersection cruciform pattern, to be figure be made up of the photoresistance district of bulk and non-photoresistance district this method shortcoming, to punctual easily out of focus, aligning is caused to make a mistake, a kind of alignment fiducials is as shown in Figure 2 in the method for the cross figure of field intersection, 3 is photoresistance district, and 4 is non-photoresistance district.
Summary of the invention
The object of the present invention is to provide a kind of alignment methods improving figure live width accuracy in measurement, if measure figure on the left side of benchmark to solve existing looking in the method for reference position, the field that figure is considered to the left side is so measured when measuring, and to punctual easily out of focus, cause aiming at the problem made a mistake.
To achieve these goals, the technical scheme that the present invention takes is:
Improve an alignment methods for figure live width accuracy in measurement, wherein:
S1: the graphic structure with lines is set on mask plate;
S2: carry out exposed wafer to described mask plate, forms alignment patterns at intersection;
S3: set up auto-measuring program, carries out accurate alignment to described alignment patterns;
S4: the structure graph needed for auto-measuring wafer.
Above-mentioned a kind of alignment methods improving figure live width accuracy in measurement, wherein, described alignment patterns is the bargraphs in lines anyhow with numeral.
Above-mentioned a kind of alignment methods improving figure live width accuracy in measurement, wherein, described alignment patterns is the bargraphs in lines anyhow with letter.
Above-mentioned a kind of alignment methods improving figure live width accuracy in measurement, wherein, described alignment patterns is " ten " font, and by boundary formation four parts.
Above-mentioned a kind of alignment methods improving figure live width accuracy in measurement, wherein, below 0.25 micron technology node.
The present invention is owing to have employed above-mentioned technology, and the good effect making it to have is:
The present invention proposes in the exposure of field intersection with design that is digital or alphabetical graphic structure, this graphic structure is used for the accurate alignment measuring the first step in live width, the order up and down of field can be identified simultaneously easily, and be applicable to 0.25 micron technology node following lines photoetching production technology.The little bargraphs in the photoresistance district that the present invention separates and non-photoresistance district, more easily focuses, and numeral or alphanumeric codes more easily identify the position of field up and down
Accompanying drawing explanation
Fig. 1 is the method for a kind of alignment fiducials in field.
Fig. 2 is the method for a kind of alignment fiducials at the cross figure of field intersection.
Fig. 3 of the present inventionly a kind ofly improves the schematic diagram exposing arrangement in the alignment methods of figure live width accuracy in measurement.
Fig. 4 is a kind of a kind of schematic diagram improving alignment patterns structure in the alignment methods of figure live width accuracy in measurement of the present invention.
Fig. 5 is a kind of another kind of schematic diagram improving alignment patterns structure in the alignment methods of figure live width accuracy in measurement of the present invention.
Embodiment
A kind of embodiment improving the alignment methods of figure live width accuracy in measurement of the present invention is provided below in conjunction with accompanying drawing.
Fig. 3 of the present inventionly a kind ofly improves the schematic diagram exposing arrangement in the alignment methods of figure live width accuracy in measurement, Fig. 4 is a kind of a kind of schematic diagram improving alignment patterns structure in the alignment methods of figure live width accuracy in measurement of the present invention, Fig. 5 is a kind of another kind of schematic diagram improving alignment patterns structure in the alignment methods of figure live width accuracy in measurement of the present invention, refers to shown in Fig. 3, Fig. 4 and Fig. 5.A kind of alignment methods improving figure live width accuracy in measurement of the present invention, includes mask plate, S1: the graphic structure this mask plate being provided with lines, and carries out field arrangement 5.S2 exposed wafer and field arrangement 5, can form alignment patterns 6 at intersection, as shown in Figure 4 and Figure 5.S3: set up auto-measuring program, carries out accurate alignment to alignment patterns 6.S4: the structure graph needed for auto-measuring wafer.
The present invention also has following execution mode on the basis of the above:
In the first embodiment of the present invention, please continue see shown in Fig. 3, Fig. 4 and Fig. 5.What above-mentioned alignment patterns 6 was concrete can be is provided with the bargraphs of numeral or letter in line anyhow.
In the second embodiment of the present invention, above-mentioned alignment patterns 6 is " ten " font, and forms four parts by the boundary of separation lines.Graphic structure after exposure lays respectively at alignment patterns 6 and has a common boundary in four parts of formation.
In the third embodiment of the present invention, applicable scope of the present invention is the photoetching production technology of the following lines exposure of 0.25 micron technology node.
In sum, use a kind of alignment methods improving figure live width accuracy in measurement of the present invention, by having separation lines and digital or alphabetical graphic structure, SEM auto-measuring effectively can be made more easily to focus, substantially increase the efficiency of auto-measuring.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the method wherein do not described in detail to the greatest extent and processing procedure are construed as to be implemented with the common mode in this area; Those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.All any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. improve an alignment methods for figure live width accuracy in measurement, it is characterized in that,
S1: the graphic structure with lines is set on mask plate;
S2: wafer is exposed by described mask plate, the intersection between different exposure range forms alignment patterns;
S3: set up auto-measuring program, accurately aims at described alignment patterns;
S4: the structure graph needed for auto-measuring wafer;
Wherein, described alignment patterns is " ten " font, and has numeral or alphabetical bargraphs by four parts formed of having a common boundary.
2. the alignment methods of raising figure live width accuracy in measurement according to claim 1, is characterized in that, for 0.25 micron technology node following lines photoetching production technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210135984.5A CN102683253B (en) | 2012-05-04 | 2012-05-04 | Method for improving line width measurement accuracy alignment of picture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210135984.5A CN102683253B (en) | 2012-05-04 | 2012-05-04 | Method for improving line width measurement accuracy alignment of picture |
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| Publication Number | Publication Date |
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| CN102683253A CN102683253A (en) | 2012-09-19 |
| CN102683253B true CN102683253B (en) | 2015-07-22 |
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| CN201210135984.5A Active CN102683253B (en) | 2012-05-04 | 2012-05-04 | Method for improving line width measurement accuracy alignment of picture |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107085350B (en) * | 2017-05-11 | 2021-01-26 | 京东方科技集团股份有限公司 | Mask plate or display mother plate and method for manufacturing cutting mark on display mother plate |
| CN109029309A (en) * | 2018-05-09 | 2018-12-18 | 深圳市华星光电半导体显示技术有限公司 | The method that a kind of pair of line width measuring machine is calibrated |
| CN112259469B (en) * | 2020-10-21 | 2022-10-18 | 上海华力集成电路制造有限公司 | Semiconductor device critical dimension measuring method and method for obtaining SEM image |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578401A (en) * | 1994-04-01 | 1996-11-26 | Hyundai Electronics Industries Co., Ltd. | Photomask for the measurement of resolution of exposure equipment |
| CN1936710A (en) * | 2006-10-18 | 2007-03-28 | 上海微电子装备有限公司 | Alignment mark and its producing method |
| CN101369571A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, wafer coarse alignment mark and coarse alignment method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100800899B1 (en) * | 2006-12-22 | 2008-02-04 | 동부일렉트로닉스 주식회사 | Method for measuring critical dimension of a semiconductor wafer |
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- 2012-05-04 CN CN201210135984.5A patent/CN102683253B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578401A (en) * | 1994-04-01 | 1996-11-26 | Hyundai Electronics Industries Co., Ltd. | Photomask for the measurement of resolution of exposure equipment |
| CN1936710A (en) * | 2006-10-18 | 2007-03-28 | 上海微电子装备有限公司 | Alignment mark and its producing method |
| CN101369571A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, wafer coarse alignment mark and coarse alignment method |
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| CN102683253A (en) | 2012-09-19 |
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