CN102683175A - Method for improving dielectric quality of metal-insulator-metal capacitor - Google Patents
Method for improving dielectric quality of metal-insulator-metal capacitor Download PDFInfo
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- CN102683175A CN102683175A CN2012101359883A CN201210135988A CN102683175A CN 102683175 A CN102683175 A CN 102683175A CN 2012101359883 A CN2012101359883 A CN 2012101359883A CN 201210135988 A CN201210135988 A CN 201210135988A CN 102683175 A CN102683175 A CN 102683175A
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Abstract
The invention discloses a method for improving the dielectric quality of a metal-insulator-metal (MIM) capacitor. The method comprises the following steps of: providing a substrate; manufacturing a lower electrode on the substrate; depositing a layer of dielectric thin film on the surface of the lower electrode; irradiating the dielectric thin film by using ultraviolet light; and manufacturing an upper electrode on the dielectric thin film. The capacitor dielectric thin film manufactured by the method has high quality, and the electric properties of the MIM capacitor can be improved.
Description
Technical field
The present invention relates to microelectronic, relate in particular to a kind of raising MIM capacitor dielectric medium matter
The method of amount.
Background technology
Continuous progress along with the semiconductor integrated circuit manufacturing technology; When semi-conductive performance constantly promotes; Semiconductor is also towards miniaturization; Microminiaturized direction develops, and the for example metal-insulator-metal type that comprises in the device (MIM, Metal-Insulator-Metal) capacitor then is the important composition unit in the integrated circuit and has a wide range of applications.
In existing integrated circuits electric capacity, MIM capacitor has become the main flow of RF IC gradually.The dielectric film layer that is deposited among the MIM is mostly by plasma chemical vapor deposition (PECVD; Plasma Enhanced Chemical Vapor) technology generates; Because its depositing temperature is lower, and be widely used in the preparation of high dielectric medium silicon nitride film.Because the character of silicon nitride film has directly determined the performance of MIM electric capacity, therefore for the performance requirement of this layer film than higher.Therefore need further to prepare high performance silicon nitride film as dielectric medium film among the MIM.
Summary of the invention
To the problem of above-mentioned existence, the purpose of this invention is to provide a kind of raising MIM capacitor dielectric medium method for quality.Adopt the electric capacity dielectric medium film of this method preparation, its film quality is better, can improve the electric property of this MIM capacitor.
The objective of the invention is to realize through following technical proposals:
A kind of raising MIM capacitor dielectric medium method for quality provides a substrate, on said substrate, makes bottom electrode, and is wherein, further comprising the steps of:
At said lower electrode surface deposition one deck dielectric medium film;
Said dielectric medium film is carried out UV-irradiation;
On said dielectric medium film, prepare top electrode.
Above-mentioned raising MIM capacitor dielectric medium method for quality, wherein, said bottom electrode is or/and top electrode can be the arbitrary metal electrode in aluminium, copper or the tantalum nitride.
Above-mentioned raising MIM capacitor dielectric medium method for quality, wherein, said dielectric medium film is a silicon nitride film.
Above-mentioned raising MIM capacitor dielectric medium method for quality, wherein, the depositing temperature of said silicon nitride film is 300 ℃-500 ℃.
Above-mentioned raising MIM capacitor dielectric medium method for quality, wherein, the deposit thickness of said silicon nitride film is 100-1000.
Above-mentioned raising MIM capacitor dielectric medium method for quality; Wherein, said dielectric medium film is being carried out in the step of UV-irradiation the wave-length coverage 320-400nm of said UV-irradiation; The irradiation temperature scope is 300 ℃-500 ℃, and irradiation time is 2-7min.
Above-mentioned raising MIM capacitor dielectric medium method for quality, wherein, repetitive cycling is carried out in the step of said lower electrode surface deposition one deck dielectric medium film with to said dielectric medium film and is carried out ultraviolet irradiation step.
Above-mentioned raising MIM capacitor dielectric medium method for quality, wherein, repetitive cycling is carried out in the step of said lower electrode surface deposition one deck dielectric medium film and is 3-10 time to the number of times that said dielectric medium film carries out ultraviolet irradiation step.
Compared with present technology, beneficial effect of the present invention is:
Making in the present invention in the process of MIM capacitor,, this electric capacity dielectric medium film is being carried out UV-irradiation through after the deposition step of accomplishing electric capacity dielectric medium film silicon nitride film.Infrared spectrum paired observation through to film finds that silicon nitride film is after the process irradiation of ultraviolet light, and Si-H in its film and N-H key reduce, and film performance improves.To pass through silicon nitride film behind the UV-irradiation as MIM electric capacity dielectric medium film, can be good at improving its electric property.
Description of drawings
Fig. 1 is a kind of raising MIM capacitor dielectric medium method for quality flow chart of the present invention;
Fig. 2 is that a kind of dielectric medium film that improves in the MIM capacitor dielectric medium method for quality of the present invention is the infrared spectrogram of silicon nitride film and MIM silicon nitride film of the prior art.
Embodiment
Below in conjunction with schematic diagram and concrete operations embodiment the present invention is described further.
As shown in fig. 1, a kind of raising MIM capacitor dielectric medium method for quality specifically may further comprise the steps:
Step S1 a: substrate is provided, on substrate, makes bottom electrode;
In this step, this bottom electrode can be the metal electrode that arbitrary metallics is made in aluminium, copper or the tantalum nitride.
Step S2: at lower electrode surface deposition one deck dielectric medium film, in one embodiment of the invention, this dielectric medium film is a silicon nitride film.
In this step, at the lower electrode surface deposition silicon nitride film, wherein, in this depositing technics, the span of deposition temperature is 300 ℃-500 ℃, and the thickness of the silicon nitride film of deposit is 100-1000.
Step S3: this silicon nitride film is carried out UV-irradiation;
In this step, the employing wave-length coverage is that the ultraviolet light of 320-400nm shines this silicon nitride film, and wherein, the span of irradiation temperature is 300 ℃-500 ℃ for the irradiation temperature scope, and irradiation time is 2-7min.
In one embodiment of the invention; Execution sequence according to step S2 and step S3 carries out the deposit of a silicon nitride film; Then this silicon nitride film is carried out UV-irradiation, thereby accomplish the step of deposition silicon nitride film and UV-irradiation, get into next step.
In one embodiment of the invention, the execution in step that circulates several times S2 and step S3, i.e. the silicon nitride film of deposit one deck ground floor on bottom electrode for the first time, then this silicon nitride film is carried out UV-irradiation after; On this ground floor silicon nitride film, carry out the deposit of second layer silicon nitride film again, then this second layer silicon nitride film is being carried out UV-irradiation.So circulation is carried out silicon nitride film depositing step and ultraviolet irradiation step until the arrival demand.For example, 3-10 circulation execution in step S2 of repetition and step S3.
Step S4: on this silicon nitride film, prepare top electrode.
Further, on the structure of the bottom electrode for preparing, deielectric-coating and top electrode, make other steps of MIM capacitor, thereby accomplish the making of MIM capacitor.
Of the present invention a kind of dielectric medium film that improves in the MIM capacitor dielectric medium method for quality of representing referring to Fig. 2 is the infrared spectrogram of silicon nitride film and MIM silicon nitride film of the prior art; Wherein, What curve 1 was represented is silicon nitride film of the prior art, the silicon nitride film through UV-irradiation that is to use the inventive method of curve 2 expressions.By finding out among Fig. 2; What the A point was represented is the N-H key in the silicon nitride film; B point representative be the Si-H key in the silicon nitride film, the representative of C point be the Si-N key, utilize N-H key and the content minimizing of Si-H key of the dielectric medium film of a kind of MIM capacitor that improves MIM capacitor dielectric medium method for quality of the present invention; And the content of Si-N key increases, and has improved the dielectric medium film performance.
More than specific embodiment of the present invention is described in detail, but the present invention is not restricted to the specific embodiment of above description, it is just as example.To those skilled in the art, any equivalent modifications and alternative also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of having done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (8)
1. one kind is improved MIM capacitor dielectric medium method for quality, and a substrate is provided, and on said substrate, makes bottom electrode, it is characterized in that, further comprising the steps of:
At said lower electrode surface deposition one deck dielectric medium film;
Said dielectric medium film is carried out UV-irradiation;
On said dielectric medium film, prepare top electrode.
2. raising MIM capacitor dielectric medium method for quality according to claim 1 is characterized in that, said bottom electrode is or/and top electrode can be the arbitrary metal electrode in aluminium, copper or the tantalum nitride.
3. raising MIM capacitor dielectric medium method for quality according to claim 1 is characterized in that said dielectric medium film is a silicon nitride film.
4. raising MIM capacitor dielectric medium method for quality according to claim 3 is characterized in that, the depositing temperature of said silicon nitride film is 300 ℃-500 ℃.
5. raising MIM capacitor dielectric medium method for quality according to claim 3 is characterized in that the deposit thickness of said silicon nitride film is 100-1000.
6. raising MIM capacitor dielectric medium method for quality according to claim 1; It is characterized in that; Said dielectric medium film is being carried out in the step of UV-irradiation; The wave-length coverage 320-400nm of said UV-irradiation, the irradiation temperature scope is 300 ℃-500 ℃, irradiation time is 2-7min.
7. raising MIM capacitor dielectric medium method for quality according to claim 1; It is characterized in that repetitive cycling is carried out in the step of said lower electrode surface deposition one deck dielectric medium film with to said dielectric medium film and carried out ultraviolet irradiation step.
8. raising MIM capacitor dielectric medium method for quality according to claim 7; It is characterized in that repetitive cycling is carried out in the step of said lower electrode surface deposition one deck dielectric medium film and is 3-10 time to the number of times that said dielectric medium film carries out ultraviolet irradiation step.
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| CN2012101359883A CN102683175A (en) | 2012-05-04 | 2012-05-04 | Method for improving dielectric quality of metal-insulator-metal capacitor |
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| CN2012101359883A CN102683175A (en) | 2012-05-04 | 2012-05-04 | Method for improving dielectric quality of metal-insulator-metal capacitor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103346080A (en) * | 2013-07-09 | 2013-10-09 | 上海华力微电子有限公司 | Method for reducing defects of metal silicide masking layer |
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| US6933191B2 (en) * | 2003-09-18 | 2005-08-23 | International Business Machines Corporation | Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors |
| CN101542657A (en) * | 2006-11-16 | 2009-09-23 | 美光科技公司 | Method of forming a structure having a high dielectric constant and a structure having a high dielectric constant |
| CN101593669A (en) * | 2008-05-30 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The formation method of original position ultraviolet light treatment method and stress silicon nitride film in the plasma process chamber |
| CN102299184A (en) * | 2010-06-23 | 2011-12-28 | 上海宏力半导体制造有限公司 | MIM (metal-insulator-metal) capacitor and manufacturing method thereof |
| CN102427019A (en) * | 2011-06-17 | 2012-04-25 | 上海华力微电子有限公司 | Method for implementing high-performance metal-oxide-metal by using ultra-low dielectric constant thin film |
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2012
- 2012-05-04 CN CN2012101359883A patent/CN102683175A/en active Pending
Patent Citations (5)
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| US6933191B2 (en) * | 2003-09-18 | 2005-08-23 | International Business Machines Corporation | Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors |
| CN101542657A (en) * | 2006-11-16 | 2009-09-23 | 美光科技公司 | Method of forming a structure having a high dielectric constant and a structure having a high dielectric constant |
| CN101593669A (en) * | 2008-05-30 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The formation method of original position ultraviolet light treatment method and stress silicon nitride film in the plasma process chamber |
| CN102299184A (en) * | 2010-06-23 | 2011-12-28 | 上海宏力半导体制造有限公司 | MIM (metal-insulator-metal) capacitor and manufacturing method thereof |
| CN102427019A (en) * | 2011-06-17 | 2012-04-25 | 上海华力微电子有限公司 | Method for implementing high-performance metal-oxide-metal by using ultra-low dielectric constant thin film |
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| CHANG YOUNG KIM ETC.: "Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC(-H) film using comb", 《THIN SOLID FILMS》 * |
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| CN103346080A (en) * | 2013-07-09 | 2013-10-09 | 上海华力微电子有限公司 | Method for reducing defects of metal silicide masking layer |
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Application publication date: 20120919 |