CN102668133A - 形成于n-掺杂衬底上的多结太阳能电池 - Google Patents
形成于n-掺杂衬底上的多结太阳能电池 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 238000010790 dilution Methods 0.000 claims description 9
- 239000012895 dilution Substances 0.000 claims description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 244000188472 Ilex paraguariensis Species 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 13
- 238000013461 design Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
公开了“n-on-p”型多结太阳能电池结构，其利用了n型衬底用于III-V半导体材料的外延生长，其中“p-on-n”隧道结二极管设置在衬底与III-V半导体材料的一个或多个异质外延层之间。
Description
相关申请的交叉引用
本申请根据35 USC 119(e)要求于2009年11月18日提交的、题为“MULTIJUNCTION SOLAR CELLS FORMED ON N-DOPEDSUBSTRATES（形成于N-掺杂衬底上的多结太阳能电池）”的第61/262,374号美国临时申请的权益，该申请的全部内容通过引用并入本文。
关于对在联邦资助的研究或开发下做出的发明的权利的声明
不适用
对以“序列表”、表格、或随压缩光盘提交的计算机程序表附件的引用
不适用
背景技术
本发明涉及用于构造基于III-V材料（诸如镓和砷化物）的太阳能电池的结构和技术。更具体地，本发明涉及形成用于含有III-V材料的装置或结构的电端子的可靠导电接触的问题。
如图1中的剖视图所示，传统或已知的基于III-V GaAs的太阳能电池可被分为三部分：下部、中部、以及上部。下部10是生长衬底，装置的各个层顺序地生长在生长衬底上。在典型的多结太阳能电池中，下部10通常为p-GaAs或p-Ge衬底，其余的层生长在该衬底上。此外，该下部可包括后部或底部电接触部11，以从电池向某些类型的负载导电。中部20代表异质外延III-V装置层，形成完全包含在中间区域内的至少一个p-n结。上部30代表需要完成与装置的电接触的半导体和金属层，此外，还代表常包含在这种装置内的抗反射涂层（ARC）。
通常，上部30中的金属和半导体层被构图为线条栅格40，如图3所示。栅格线图案的许多变型是可能的。用于栅格的金属堆叠的厚度必须足以使电池所产生的太阳能生成电流在较小电阻下传导。主要包含银或金的金属堆叠厚度通常为约5μm的量级。文献中和现有技术中描述了III-V太阳能电池的多种不同设计，这些设计使用各种材料和制造技术。图2中示出了两结太阳能电池的示意性剖视图。
面向太阳的层又称为最上部结的最上层或顶层。大多数太阳能电池结包括位于较厚p型基极区顶部的较薄n型发射极区（“n-on-p”型结构）。为了使电池适当地工作，III-V堆内的所有结均必须具有相同的定向。因此，如果一个结是“n-on-p”型，则电池中的所有结也必须是“n-on-p”型。多结太阳能电池堆叠中的结可包括背面电场和正面电场。隧道结可连接各种子电池p-n结。
因为III-V堆叠内的结需要统一的定向，故标准的“n-on-p”型太阳能电池通常生长于p-掺杂衬底（诸如p-GaAs或p-Ge）上。衬底在这种电池中常常被用作最下部结的底层。然而，p-掺杂GaAs衬底通常比可替换的n型或半绝缘（SI）变体更加昂贵。因此，期望通过使用低成本n-掺杂生长衬底来降低“n-on-p”型太阳电池的生产成本。然而，直接这样做将导致最下部结的反定向，从而导致太阳能电池无法正常工作。
发明内容
根据本发明，提供了一种使用n-GaAs（或其它n-掺杂半导体材料）作为用于“n-on-p”型太阳能电池设计的衬底的方法，该方法包括在衬底之上将“p-on-n”隧道结二极管沉积为第一层材料，以及将全部III-V堆叠沉积在隧道二极管之上。其它层可生长于衬底与第一隧道结之间，只要其它层的掺杂类型为n型或者为未掺杂的。与太阳能电池中的其它隧道结一样，该第一隧道结在非整流状态下工作。在电学方面上，隧道结像低阻值电阻器一样工作并且不阻碍电流流动。
通过下面结合附图的详细描述，本发明将被更好地理解。
附图说明
图1是代表太阳能电池的概括（现有技术）的截面图，其中太阳能电池包括金属层上的下部、中部和上部。
图2是代表双结n-on-p型太阳能电池堆叠的概括（现有技术）的截面图。
图3是示意性地描绘（现有技术）金属栅格布局的平面图。
图4是根据本发明的p-on-n型装置的示意性形式的截面图，其中隧道结已经插入衬底与III-V异质外延太阳能电池装置层之间，代表三结、四结或五结太阳能电池。
图5是在模拟的“1-太阳”太阳光谱构成的光施加至太阳能电池的情况下，InGaP/GaAs多结太阳能电池的电流-电压特性的图解表示。
具体实施方式
图4示出了本发明。“n-on-p”型太阳能电池装置包括上部30、中部20、以及作为下部10的n型衬底。附加的隧道结50沉积在下部10与中部20之间，并且隧道结50基本将衬底的n-掺杂表面转换为p-掺杂材料。可将标准的n型半导体和金属接触部11制造为n型衬底10。
具体实施方式在隧道结50上使用稀释氮化物子电池，导致太阳能电池能够吸收较长波长的能量，而不需要依赖对作为子电池结构的一部分的衬底的使用。该实施方式特别有利，因为其将较长波长子电池的性能与低成本n型GaAs衬底相结合，其中太阳能电池中的所有基极层和发射极层均是彼此晶格匹配的。稀释氮化物通常被认为是氮含量小于5%的III-V型半导体合金。在本文中，术语较长波长是指与小于1.42eV（等价于纯GaAs的带隙）的能量相对应的波长，或波长大于约870nm的波长。晶格匹配层的晶体结构是一致的，并且尽管在层中可能出现应力，层间也不松弛或分离。
通过适当选择成分，能够独立地改变稀释氮化物的带隙和晶格常数，从而允许稀释氮化物，例如，与砷化镓衬底晶格匹配，并具有用于具体装置设计的最佳带隙。例如，在三结太阳能电池的情况下，最长波长结的最佳带隙约为1eV（0.93eV至1.05eV）。使用稀释氮化物材料能够获得这种带隙，并保持与GaAs的晶格匹配。这类三结太阳能电池可具有由砷化镓和磷化铟镓构成的第二结和第三结。在这种情况下，所有n-on-p结中的大多数都能够与衬底晶格匹配。
另一个具体实施方式涉及将硅-锗合金作为最长波长吸收结的使用。硅-锗材料能够容易地与GaAs衬底晶格匹配。通过向锗添加约2%的硅，实现与GaAs的晶格匹配。将硅添加至锗特别有助于子电池与砷化镓衬底的晶格匹配。这种材料具有接近0.7eV的带隙。包括硅-锗子电池的三结装置可被构造为与上述基于稀释氮化物的结构类似。
制备于n-GaAs衬底上的“n-on-p”型太阳能电池使用该方法。图5示出了在约1个太阳的光学功率下工作的这种装置的电流-电压（IV）曲线。该示范装置是双结太阳能电池，该双结太阳能电池的设计与图2所示设计类似，但在衬底10与堆叠20之间具有额外的隧道结，如图4所示。该最底部隧道结由p++GaAs和n++GaAs形成。测量该装置并获得13.4mA/cm2的1-太阳短路电流、2.26V的开路电压、以及>85%的填充因子，清楚地说明该设计的可行性。
本发明将对具有1至n个结（其中n>1）的许多不同多结装置有效。本领域技术人员应理解，适于两结或三结装置的方案还可用于更多或更少结，诸如四结太阳能电池或五结太阳能电池。本发明能够与用于制造太阳能电池或太阳能电池结的许多不同材料和结构一起使用，包括但不限于稀释氮化物材料，变质InGaAs层、量子点、量子阱，等等。本文描述的本发明适用于任何广义上的“n-on-p”型太阳能电池装置，其中，所有太阳能吸收结均包含在图2中所示的堆叠20内。本发明可用于晶格匹配结构。衬底10不是太阳能吸收结的一部分。因此，本公开仅为代表性和示意性的，而非本领域技术人员可使用本发明的所有方法的决定性讨论。
本发明已经参照具体实施方式进行了说明。对于本领域技术人员来说，其它实施方式将是显而易见的。因此，除了所附权利要求所指示的之外，不打算对本发明进行限制。
Claims (15)
1.一种装置，包括：
衬底，由n-掺杂半导体材料构成，并与金属导体电接触；
p-on-n隧道结二极管，设置于所述衬底之上；
一个或多个n-on-p结，设置于所述隧道结二极管之上；
金属栅格，与最上层半导体电接触，
其中所述衬底、所述p-on-n隧道结二极管、所述一个或多个n-on-p结以及所述金属栅格共同形成光伏装置。
2.根据权利要求1所述的装置，其中与所述金属栅格接触的所述最上层半导体为n型。
3.根据权利要求1所述的装置，其中所述隧道结二极管利用了n++GaAs上的p++GaAs。
4.根据权利要求1所述的装置，其中所形成的光伏装置是三结太阳能电池。
5.根据权利要求4所述的装置，其中所述n-on-p结中的至少一个具有约1eV的带隙或处于0.93eV与1.05eV之间的带隙。
6.根据权利要求5所述的装置，其中至少第一结包含与所述衬底晶格匹配的稀释氮化物材料。
7.根据权利要求6所述的装置，其中至少第二结和第三结包含砷化镓和磷化铟镓，并且所有所述n-on-p结均与所述衬底晶格匹配。
8.根据权利要求7所述的装置，其中所述衬底包含n型砷化镓。
9.根据权利要求5所述的装置，其中所述约1eV的结包含不与所述衬底晶格匹配的材料。
10.根据权利要求4所述的装置，其中至少一个结包含与所述衬底晶格匹配的硅-锗材料。
11.根据权利要求1所述的装置，其中所形成的光伏装置为四结太阳能电池。
12.根据权利要求11所述的装置，其中至少第一结包含与所述衬底晶格匹配的稀释氮化物材料。
13.根据权利要求1所述的装置，其中所形成的光伏装置为五结太阳能电池。
14.根据权利要求13所述的装置，其中至少第一结包含与所述衬底晶格匹配的稀释氮化物材料。
15.根据权利要求1所述的装置，其中所述一个或多个n-on-p结包括被确定为位于元素周期表的III族和V族中的材料。
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| Application Number | Priority Date | Filing Date | Title |
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| US26237409P | 2009-11-18 | 2009-11-18 | |
| US61/262,374 | 2009-11-18 | ||
| US12/944,439 US20110114163A1 (en) | 2009-11-18 | 2010-11-11 | Multijunction solar cells formed on n-doped substrates |
| US12/944,439 | 2010-11-11 | ||
| PCT/US2010/056800 WO2011062886A1 (en) | 2009-11-18 | 2010-11-16 | Multijunction solar cells formed on n-doped substrates |
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| US20100319764A1 (en) * | 2009-06-23 | 2010-12-23 | Solar Junction Corp. | Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells |
| US20110232730A1 (en) | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
| US9214580B2 (en) | 2010-10-28 | 2015-12-15 | Solar Junction Corporation | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
| US8962991B2 (en) | 2011-02-25 | 2015-02-24 | Solar Junction Corporation | Pseudomorphic window layer for multijunction solar cells |
| US8766087B2 (en) | 2011-05-10 | 2014-07-01 | Solar Junction Corporation | Window structure for solar cell |
| WO2013074530A2 (en) | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
| US9153724B2 (en) | 2012-04-09 | 2015-10-06 | Solar Junction Corporation | Reverse heterojunctions for solar cells |
| US20140373906A1 (en) * | 2013-06-25 | 2014-12-25 | Solar Junction Corporation | Anti-reflection coatings for multijunction solar cells |
| EP3103142B1 (en) | 2014-02-05 | 2020-08-19 | Array Photonics, Inc. | Monolithic multijunction power converter |
| US20170110613A1 (en) | 2015-10-19 | 2017-04-20 | Solar Junction Corporation | High efficiency multijunction photovoltaic cells |
| CN106611805A (zh) * | 2015-10-22 | 2017-05-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 光伏器件及其制备方法、多结GaAs叠层激光光伏电池 |
| US10930808B2 (en) | 2017-07-06 | 2021-02-23 | Array Photonics, Inc. | Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
| EP3669402A1 (en) | 2017-09-27 | 2020-06-24 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having a dilute nitride layer |
| US10586884B2 (en) * | 2018-06-18 | 2020-03-10 | Alta Devices, Inc. | Thin-film, flexible multi-junction optoelectronic devices incorporating lattice-matched dilute nitride junctions and methods of fabrication |
| US11211514B2 (en) | 2019-03-11 | 2021-12-28 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions |
Family Cites Families (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4404421A (en) * | 1982-02-26 | 1983-09-13 | Chevron Research Company | Ternary III-V multicolor solar cells and process of fabrication |
| US4881979A (en) * | 1984-08-29 | 1989-11-21 | Varian Associates, Inc. | Junctions for monolithic cascade solar cells and methods |
| JPS63100781A (ja) * | 1986-10-17 | 1988-05-02 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子 |
| US5061562A (en) * | 1987-09-22 | 1991-10-29 | Fuji Photo Film Co., Ltd. | Method for preparing a magnetic recording medium and a magnetic disk using the same |
| US4935384A (en) * | 1988-12-14 | 1990-06-19 | The United States Of America As Represented By The United States Department Of Energy | Method of passivating semiconductor surfaces |
| JPH02218174A (ja) * | 1989-02-17 | 1990-08-30 | Mitsubishi Electric Corp | 光電変換半導体装置 |
| US5223043A (en) * | 1991-02-11 | 1993-06-29 | The United States Of America As Represented By The United States Department Of Energy | Current-matched high-efficiency, multijunction monolithic solar cells |
| US5166761A (en) * | 1991-04-01 | 1992-11-24 | Midwest Research Institute | Tunnel junction multiple wavelength light-emitting diodes |
| US5342453A (en) * | 1992-11-13 | 1994-08-30 | Midwest Research Institute | Heterojunction solar cell |
| US5316593A (en) * | 1992-11-16 | 1994-05-31 | Midwest Research Institute | Heterojunction solar cell with passivated emitter surface |
| US5800630A (en) * | 1993-04-08 | 1998-09-01 | University Of Houston | Tandem solar cell with indium phosphide tunnel junction |
| US5376185A (en) * | 1993-05-12 | 1994-12-27 | Midwest Research Institute | Single-junction solar cells with the optimum band gap for terrestrial concentrator applications |
| US5405453A (en) * | 1993-11-08 | 1995-04-11 | Applied Solar Energy Corporation | High efficiency multi-junction solar cell |
| US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
| FR2722612B1 (fr) * | 1994-07-13 | 1997-01-03 | Centre Nat Rech Scient | Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif |
| US5911839A (en) * | 1996-12-16 | 1999-06-15 | National Science Council Of Republic Of China | High efficiency GaInP NIP solar cells |
| JP3683669B2 (ja) * | 1997-03-21 | 2005-08-17 | 株式会社リコー | 半導体発光素子 |
| US6281426B1 (en) * | 1997-10-01 | 2001-08-28 | Midwest Research Institute | Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge |
| US5944913A (en) * | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
| US6150603A (en) * | 1999-04-23 | 2000-11-21 | Hughes Electronics Corporation | Bilayer passivation structure for photovoltaic cells |
| US6252287B1 (en) * | 1999-05-19 | 2001-06-26 | Sandia Corporation | InGaAsN/GaAs heterojunction for multi-junction solar cells |
| US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
| JP4064592B2 (ja) * | 2000-02-14 | 2008-03-19 | シャープ株式会社 | 光電変換装置 |
| US6815736B2 (en) * | 2001-02-09 | 2004-11-09 | Midwest Research Institute | Isoelectronic co-doping |
| US7233028B2 (en) * | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
| US6787385B2 (en) * | 2001-05-31 | 2004-09-07 | Midwest Research Institute | Method of preparing nitrogen containing semiconductor material |
| US6586669B2 (en) * | 2001-06-06 | 2003-07-01 | The Boeing Company | Lattice-matched semiconductor materials for use in electronic or optoelectronic devices |
| US20030070707A1 (en) * | 2001-10-12 | 2003-04-17 | King Richard Roland | Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device |
| US7119271B2 (en) * | 2001-10-12 | 2006-10-10 | The Boeing Company | Wide-bandgap, lattice-mismatched window layer for a solar conversion device |
| US6764926B2 (en) * | 2002-03-25 | 2004-07-20 | Agilent Technologies, Inc. | Method for obtaining high quality InGaAsN semiconductor devices |
| US6660928B1 (en) * | 2002-04-02 | 2003-12-09 | Essential Research, Inc. | Multi-junction photovoltaic cell |
| US6756325B2 (en) * | 2002-05-07 | 2004-06-29 | Agilent Technologies, Inc. | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region |
| US8173891B2 (en) * | 2002-05-21 | 2012-05-08 | Alliance For Sustainable Energy, Llc | Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps |
| US8067687B2 (en) * | 2002-05-21 | 2011-11-29 | Alliance For Sustainable Energy, Llc | High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters |
| US20060162768A1 (en) * | 2002-05-21 | 2006-07-27 | Wanlass Mark W | Low bandgap, monolithic, multi-bandgap, optoelectronic devices |
| US6967154B2 (en) * | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
| US7255746B2 (en) * | 2002-09-04 | 2007-08-14 | Finisar Corporation | Nitrogen sources for molecular beam epitaxy |
| US7122733B2 (en) * | 2002-09-06 | 2006-10-17 | The Boeing Company | Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds |
| US6765238B2 (en) * | 2002-09-12 | 2004-07-20 | Agilent Technologies, Inc. | Material systems for semiconductor tunnel-junction structures |
| US7126052B2 (en) * | 2002-10-02 | 2006-10-24 | The Boeing Company | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices |
| US7122734B2 (en) * | 2002-10-23 | 2006-10-17 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
| US7071407B2 (en) * | 2002-10-31 | 2006-07-04 | Emcore Corporation | Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
| WO2004054003A1 (en) * | 2002-12-05 | 2004-06-24 | Blue Photonics, Inc. | High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
| US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
| US7123638B2 (en) * | 2003-10-17 | 2006-10-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant |
| JP5248782B2 (ja) * | 2004-01-20 | 2013-07-31 | シリアム・テクノロジーズ・インコーポレーテッド | エピタキシャルに成長させた量子ドット材料を有する太陽電池 |
| US7807921B2 (en) * | 2004-06-15 | 2010-10-05 | The Boeing Company | Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer |
| US7473941B2 (en) * | 2005-08-15 | 2009-01-06 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Structures for reducing operating voltage in a semiconductor device |
| US11211510B2 (en) * | 2005-12-13 | 2021-12-28 | The Boeing Company | Multijunction solar cell with bonded transparent conductive interlayer |
| US20070227588A1 (en) * | 2006-02-15 | 2007-10-04 | The Regents Of The University Of California | Enhanced tunnel junction for improved performance in cascaded solar cells |
| US20100229926A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer |
| US20090078310A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
| US7872252B2 (en) * | 2006-08-11 | 2011-01-18 | Cyrium Technologies Incorporated | Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails |
| US7842881B2 (en) * | 2006-10-19 | 2010-11-30 | Emcore Solar Power, Inc. | Solar cell structure with localized doping in cap layer |
| US20080149173A1 (en) * | 2006-12-21 | 2008-06-26 | Sharps Paul R | Inverted metamorphic solar cell with bypass diode |
| US7825328B2 (en) * | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US20080257405A1 (en) * | 2007-04-18 | 2008-10-23 | Emcore Corp. | Multijunction solar cell with strained-balanced quantum well middle cell |
| JP2009010175A (ja) * | 2007-06-28 | 2009-01-15 | Sumitomo Electric Ind Ltd | 受光素子およびその製造方法 |
| WO2009009111A2 (en) * | 2007-07-10 | 2009-01-15 | The Board Of Trustees Of The Leland Stanford Junior University | GaInNAsSB SOLAR CELLS GROWN BY MOLECULAR BEAM EPITAXY |
| JP5417694B2 (ja) * | 2007-09-03 | 2014-02-19 | 住友電気工業株式会社 | 半導体素子およびエピタキシャルウエハの製造方法 |
| US8895342B2 (en) * | 2007-09-24 | 2014-11-25 | Emcore Solar Power, Inc. | Heterojunction subcells in inverted metamorphic multijunction solar cells |
| GB0719554D0 (en) * | 2007-10-05 | 2007-11-14 | Univ Glasgow | semiconductor optoelectronic devices and methods for making semiconductor optoelectronic devices |
| US20090155952A1 (en) * | 2007-12-13 | 2009-06-18 | Emcore Corporation | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells |
| US20090255575A1 (en) * | 2008-04-04 | 2009-10-15 | Michael Tischler | Lightweight solar cell |
| US20090255576A1 (en) * | 2008-04-04 | 2009-10-15 | Michael Tischler | Window solar cell |
| US20090272438A1 (en) * | 2008-05-05 | 2009-11-05 | Emcore Corporation | Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell |
| US20090288703A1 (en) * | 2008-05-20 | 2009-11-26 | Emcore Corporation | Wide Band Gap Window Layers In Inverted Metamorphic Multijunction Solar Cells |
| US8309374B2 (en) * | 2008-10-07 | 2012-11-13 | Applied Materials, Inc. | Advanced platform for processing crystalline silicon solar cells |
| US8912428B2 (en) * | 2008-10-22 | 2014-12-16 | Epir Technologies, Inc. | High efficiency multijunction II-VI photovoltaic solar cells |
| KR20100084843A (ko) * | 2009-01-19 | 2010-07-28 | 삼성전자주식회사 | 다중접합 태양전지 |
| US20100282306A1 (en) * | 2009-05-08 | 2010-11-11 | Emcore Solar Power, Inc. | Multijunction Solar Cells with Group IV/III-V Hybrid Alloys |
| US20100282305A1 (en) * | 2009-05-08 | 2010-11-11 | Emcore Solar Power, Inc. | Inverted Multijunction Solar Cells with Group IV/III-V Hybrid Alloys |
| US20100319764A1 (en) * | 2009-06-23 | 2010-12-23 | Solar Junction Corp. | Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells |
| MX2012001218A (es) * | 2009-07-29 | 2012-06-01 | Cyrium Technologies Inc | Celda solar y metodo de fabricacion de la misma. |
| JP5649157B2 (ja) * | 2009-08-01 | 2015-01-07 | 住友電気工業株式会社 | 半導体素子およびその製造方法 |
| US20110232730A1 (en) * | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
| US20110303268A1 (en) * | 2010-06-15 | 2011-12-15 | Tan Wei-Sin | HIGH EFFICIENCY InGaAsN SOLAR CELL AND METHOD OF MAKING |
| US8642883B2 (en) * | 2010-08-09 | 2014-02-04 | The Boeing Company | Heterojunction solar cell |
| US9214580B2 (en) * | 2010-10-28 | 2015-12-15 | Solar Junction Corporation | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
| US8962991B2 (en) * | 2011-02-25 | 2015-02-24 | Solar Junction Corporation | Pseudomorphic window layer for multijunction solar cells |
| US8927857B2 (en) * | 2011-02-28 | 2015-01-06 | International Business Machines Corporation | Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices |
| US8766087B2 (en) * | 2011-05-10 | 2014-07-01 | Solar Junction Corporation | Window structure for solar cell |
| WO2013074530A2 (en) * | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
-
2010
- 2010-11-11 US US12/944,439 patent/US20110114163A1/en not_active Abandoned
- 2010-11-16 JP JP2012539966A patent/JP2013511845A/ja not_active Withdrawn
- 2010-11-16 WO PCT/US2010/056800 patent/WO2011062886A1/en active Application Filing
- 2010-11-16 EP EP10832047A patent/EP2502286A1/en not_active Withdrawn
- 2010-11-16 CN CN201080052437XA patent/CN102668133A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP2502286A1 (en) | 2012-09-26 |
| WO2011062886A1 (en) | 2011-05-26 |
| US20110114163A1 (en) | 2011-05-19 |
| JP2013511845A (ja) | 2013-04-04 |
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