CN102651373A - Manufacturing method of semiconductor device, semiconductor device and electronic apparatus - Google Patents
Manufacturing method of semiconductor device, semiconductor device and electronic apparatus Download PDFInfo
- Publication number
- CN102651373A CN102651373A CN2012100266877A CN201210026687A CN102651373A CN 102651373 A CN102651373 A CN 102651373A CN 2012100266877 A CN2012100266877 A CN 2012100266877A CN 201210026687 A CN201210026687 A CN 201210026687A CN 102651373 A CN102651373 A CN 102651373A
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- plasma
- electrode pad
- wiring layer
- semiconductor device
- front surface
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 102
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000002184 metal Substances 0.000 claims abstract description 98
- 238000012545 processing Methods 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 68
- 239000007789 gas Substances 0.000 claims abstract description 67
- 230000008569 process Effects 0.000 claims abstract description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 239000011261 inert gas Substances 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 18
- 150000002739 metals Chemical class 0.000 claims abstract description 14
- 238000013459 approach Methods 0.000 claims description 95
- 239000004568 cement Substances 0.000 claims description 60
- 239000002131 composite material Substances 0.000 claims description 60
- 238000002161 passivation Methods 0.000 claims description 48
- 230000001678 irradiating effect Effects 0.000 claims description 30
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 239000003595 mist Substances 0.000 claims description 17
- 238000006396 nitration reaction Methods 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052754 neon Inorganic materials 0.000 claims description 5
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052724 xenon Inorganic materials 0.000 claims description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 abstract description 55
- 230000007797 corrosion Effects 0.000 abstract description 55
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 42
- 239000000203 mixture Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 167
- 239000007787 solid Substances 0.000 description 61
- 239000010949 copper Substances 0.000 description 43
- 230000000694 effects Effects 0.000 description 32
- 229910052782 aluminium Inorganic materials 0.000 description 31
- 239000004411 aluminium Substances 0.000 description 28
- 230000004888 barrier function Effects 0.000 description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 26
- 238000005530 etching Methods 0.000 description 17
- 238000000227 grinding Methods 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 9
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 5
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000004575 stone Substances 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical class FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000010183 spectrum analysis Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- YUCFVHQCAFKDQG-UHFFFAOYSA-N fluoromethane Chemical compound F[CH] YUCFVHQCAFKDQG-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229960004065 perflutren Drugs 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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Abstract
The invention refers to a manufacturing method of a semiconductor device, a semiconductor device and an electronic apparatus. The manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer. According to the invention, corrosion leading to reduce of joint strength and bad appearances of an exposure surface of the wiring layer and generated on the exposure surface of the wiring layer can be restrained when water is in contact with the exposure surface of wiring layer in scribing processing.
Description
The cross reference of related application
The present invention comprises Japan of submitting to Japan Patent office with on February 23rd, 2011 relevant theme of disclosure of patent application JP 2011-036638 formerly, will be somebody's turn to do at the full content of first to file at this and incorporate this paper by reference into.
Technical field
The present invention relates to manufacturing approach, semiconductor device and the electronic installation of semiconductor device.
Background technology
Imageing sensor semiconductor device such as (solid photographic devices) such as CCD (charge coupled device) type or CMOS (complementary metal oxide semiconductors (CMOS)) type has the electrode pad as the part of wiring layer.For example, the electrode pad of semiconductor device is electrically connected with lead frame that extends lead etc.For electrode pad is electrically connected to lead frame etc., through wire-bonded metal wire is connected to electrode pad, perhaps on electrode pad, form projection, said projection is the protuberance of being processed by scolder etc.
Through the preliminary treatment that is known as processing of wafers (wafer process) (preparatory process) in the fabrication of semiconductor device, form the electrode pad of semiconductor device.For example; Go up at the semiconductor substrate of processing by silicon (Si) (wafer) and to form electrode pad and perhaps cover with passivating film such as protection under the state of stacked films such as planarization film of this electrode pad, electrode pad is exposed to the outside through the above-mentioned stacked film of removing on the electrode pad.For example, the dry etching method through using etching gas etc. is removed the stacked film on the electrode pad, thereby the part that is removed stacked film forms the peristome that electrode pad is exposed.
In addition, in the subsequent treatment after comprising the preliminary treatment that electrode pad form to be handled, carry out the electrical connection of electrode pad through wire-bonded etc.In this subsequent treatment, before being electrically connected processing, waiting through the check measurement (probe test) that uses probe and to carry out wafer inspection, and carry out scribing and handle (dicing process) so that wafer is cut and separate into a plurality of chips through wire-bonded.In scribing is handled, for example,, come cut crystal through the discoid diamond blade that utilizes high speed rotating when wafer applies cooling water.
In the semiconductor device of making through above-mentioned processing,, importantly to guarantee the bond strength of electrode pad for the electrical connection that improves electrode pad and the reliability of mechanical connection.In order to ensure the bond strength of electrode pad, kinds of schemes is provided in the prior art.For example; Japanese unexamined patent JP 2006-253422 has disclosed following technology: considering when the film thickness of electrode pad is thin, the mechanical strength step-down of electrode pad, and thereby reduced under the situation of bond strength; Electrode pad is formed stack layer, to improve bond strength.
Yet, in semiconductor device, when water contacts with electrode pad, electrode pad generation etching problem, this is one of reason that causes the bond strength reduction.When in above-mentioned subsequent treatment, carrying out the scribing processing, electrode pad is in water (pure water) the Shi Yushui contact that is applied in as cooling water.Because electrode pad contacts with water, so the metal that forms this electrode pad owing to the electrolysis of water ionization takes place.This phenomenon is known as galvanic corrosion (galvanic corrosion).
Particularly, for example, be that if electrode pad contacts with water, aluminium is by ionization under the situation about being processed by the alloy (AlCu) of aluminium (Al) and copper (Cu) at electrode pad, thus the wash-out aluminium ion.The reaction of the aluminium ion of wash-out and water, and with combine such as the wafer cutting swarf (silicon bits) that in scribing is handled, produces etc., thereby on the front surface of electrode pad, form attachment.This attachment is coated with the aluminium hydroxide that the reaction of aluminium and water is produced, and this attachment is securely attached to the front surface of electrode pad.Owing to there being appendiculate reason on the electrode pad, on the electrode pad front surface, produced unusual corrosion, in this unusual corrosion, attachment is attached to by around the corrosion part that galvanic corrosion caused.
Thereby on the electrode pad front surface, producing with the galvanic corrosion is the corrosion of starting point.The corrosion that produces on the front surface of electrode pad has reduced electrode pad and such as the effective contact area between the wiring such as the metal wire that is connected to electrode pad (promptly; Mating surface), this has caused electrically contacting such as the bad connections such as reduction of mechanical bond intensity are perhaps bad.And the corrosion that produces on the front surface of electrode pad causes bad outward appearance.In addition, the bad contact of electrode pad has caused the complaint of user to reliability.
Summary of the invention
Correspondingly; Expectation provides manufacturing approach, semiconductor device and the electronic installation of semiconductor device, the corrosion of the reducing of the bond strength so that can be suppressed at that the exposed surface of wiring layer under the situation such as scribing processes contacts with water on the exposed surface that produces and cause wiring layer, bad outward appearance etc.
One embodiment of the present of invention provide a kind of manufacturing approach of semiconductor device; This method comprises: the wiring layer that is formed by alloy is exposed on the face side of semiconductor substrate, and said alloy comprises two or more metals with various criterion electrode potential; And carry out Cement Composite Treated by Plasma, so that plasma that is produced by the mist of nitrogenous gas and inert gas or the plasma that produced by nitrogenous gas shine the scope of the exposed surface that comprises said wiring layer.
In the above-mentioned manufacturing approach of semiconductor device of the present invention; In the said step that said wiring layer is exposed; On said exposed surface, generate passivation layer; In the said step that said wiring layer is exposed with carry out between the said step of said Cement Composite Treated by Plasma, said method is further comprising the steps of: remove said passivation layer.
In the above-mentioned manufacturing approach of semiconductor device of the present invention, said nitrogenous gas comprises at least a in nitrogen, ammonia and the Nitrogen trifluoride, and said inert gas comprises at least a in argon gas, xenon, helium and the neon.
In the above-mentioned manufacturing approach of semiconductor device of the present invention, said wiring layer comprises electrode pad, and said electrode pad has the connection surface that is used to be electrically connected, and said connection surface is said exposed surface.
The above-mentioned manufacturing approach of semiconductor device of the present invention can also comprise, after carrying out said Cement Composite Treated by Plasma, carries out scribing and handles, so that said semiconductor substrate is cut and separate into a plurality of chips.
An alternative embodiment of the invention provides a kind of manufacturing approach of semiconductor device; This method comprises: carry out predetermined process; On a face side of semiconductor substrate, to generate contact site, in said contact site, two or more metals with various criterion electrode potential contact with each other; And carry out Cement Composite Treated by Plasma, so that plasma that is produced by the mist of nitrogenous gas and inert gas or the plasma that is produced by nitrogenous gas shine the scope that comprises said contact site.
Another embodiment of the present invention provides a kind of semiconductor device, and this semiconductor device comprises: semiconductor substrate; Be positioned at the wiring layer on the face side of said semiconductor substrate, it is to be formed by alloy, and said alloy comprises two or more metals with various criterion electrode potential; And nitration case, it is formed on through plasma of being produced by the mist of nitrogenous gas and inert gas or by the said wiring layer of plasma irradiating that nitrogenous gas produces on the top layer on the surface that receives said plasma irradiating of said wiring layer.
In above-mentioned semiconductor device of the present invention, said nitration case is formed on the top layer of the metal section and part with higher standard electrode potential in the said two or more metal; Said semiconductor device also comprises passivation layer, forms when said passivation layer is passivated on the said top layer of said wiring layer.
The present invention another embodiment provide a kind of electronic installation, and this electronic installation comprises above-mentioned semiconductor device and drive division, and said drive division produces the drive signal that is used to drive semiconductor device.
According to the abovementioned embodiments of the present invention, can be suppressed at that the bond strength on the exposed surface that produce and that cause wiring layer reduces on the exposed surface of wiring layer when water contacts with the exposed surface of wiring layer in the processing such as scribing processing, the corrosion of bad outward appearance etc.
Description of drawings
Fig. 1 is the profile of structure of the solid photographic device of expression one embodiment of the invention;
Fig. 2 representes the mechanism of production of corroding;
Fig. 3 is the flow chart of the manufacturing approach of expression one embodiment of the invention;
Fig. 4 A and Fig. 4 B represent the manufacturing approach of one embodiment of the invention;
Fig. 5 representes the manufacturing approach of one embodiment of the invention;
Fig. 6 representes the manufacturing approach of one embodiment of the invention;
Fig. 7 representes the manufacturing approach of one embodiment of the invention;
Fig. 8 is the local amplification profile of state of manufacturing approach of the solid photographic device of expression one embodiment of the invention;
Fig. 9 is the local amplification profile of structure of the solid photographic device of expression one embodiment of the invention;
Figure 10 A and Figure 10 B represent to produce between the example of one embodiment of the present of invention and prior art the contrast of corrosion;
Figure 11 representes the measurement to the bond strength of the wire-bonded of one embodiment of the invention;
Figure 12 representes the example to the measurement result of bond strength according to embodiments of the invention and example of the prior art;
Figure 13 is the flow chart of the manufacturing approach of expression one embodiment of the invention;
Figure 14 representes the manufacturing approach of one embodiment of the invention;
Figure 15 is the local amplification profile of structure of the solid photographic device of expression one embodiment of the invention;
Figure 16 is the flow chart of the manufacturing approach of expression one embodiment of the invention;
Figure 17 is the local amplification profile of structure of the solid photographic device of expression one embodiment of the invention;
Figure 18 representes the manufacturing approach of one embodiment of the invention; And
Figure 19 representes the structure of the electronic installation of one embodiment of the invention.
Embodiment
The present invention has utilized the following fact: be by (for example comprising two or more alloys with metal of various criterion electrode potential such as wiring layers such as electrode pads; AlCu) in the structure that forms; Owing to the wiring layer that in scribing processing etc., exposes contact the galvanic effect (Galvanic Effect) that produces with water, generation is corroded on the front surface of wiring layer.
Here; Galvanic effect is following a kind of phenomenon: at dissimilar metal (dissimilar metals) with alloy state or contact condition and be stored under the situation in the conducting liquid; Because the difference between the standard electrode potential; A kind of metal discharges electronics and by ionization and be dissolved in the solution, and electronics offers another metal through solution.For example; As stated; Under wiring layer and situation that water contacts; Oxidation takes place and is dissolved in water in the metal (relatively " rudimentary " metal (coarse metal)) with low standard electrode potential, the electronics that when dissolving, produces with the hydrogen ions in the conducting liquid (reduction) thus generation hydrogen.Particularly, when the metal with substandard electrode potential is aluminium, reaction as follows takes place.
Al-＞Al
3++ 3e
-(oxidation)
H
2O+CO
2-＞H
++ HCO
3 -(ionization of conducting solution)
2H
++ 2e
--＞H
2(reduction)
In method for making semiconductor; In order to suppress because above-mentioned galvanic effect and the corrosion that produces at the wiring layer front surface; The present invention includes following processing: make wiring layer (for example; Electrode pad) after the processing that exposes, utilize the plasma that produces by predetermined mist that the scope of the exposed surface that comprises wiring layer is shone.
In the present invention, use nitrogenous gas and inert gas mist, or use the mist of nitrogenous gas as the formation plasma.Here, use nitrogen (N
2), ammonia (NH
3), Nitrogen trifluoride (NF
3) wait as nitrogenous gas.In addition, use argon gas (Ar), xenon (Xe), helium (He), neon (Ne) etc. as inert gas.Correspondingly, the plasma that uses among the present invention for example is to utilize the N that mist produced of nitrogen and argon gas
2/ Ar plasma, or the N that utilizes nitrogen and produced
2Plasma.
By this way; Through using plasma to (for example comprising wiring layer; The scope of exposed surface electrode pad) is shone; The galvanic effect on the exposed surface of wiring layer can be prevented through the nitridation reaction that causes by plasma, thereby the corrosion that produces on the front surface of wiring layer can be suppressed.In addition, as stated, in the part that dissimilar metal contacts with each other, also produce galvanic effect.Therefore, except the alloy that comprises the metal with various criterion electrode potential, plasma irradiating object of the present invention also comprises the contact portion that is formed by the metal with various criterion electrode potential.
Below embodiments of the invention will be described.In the explanation of embodiment, will use cmos image sensor semiconductor device to be described as example.Yet the present invention can be widely applied to such as different solid photographic devices such as ccd image sensors or such as different semiconductor equipments such as semiconductor integrated circuit.
The structure of solid photographic device
The solid photographic device of the embodiment of the invention will be described with reference to Fig. 1.As shown in Figure 1, solid photographic device 1 comprises semiconductor substrate 2, and semiconductor substrate 2 is the wafers that formed by semiconductor (for example silicon).When the plane graph of semiconductor substrate 2 is observed, solid photographic device 1 comprises camera watch region 3, peripheral circuit area 4 and outside join domain 5.
Each unit pixel 6 comprises photodiode and a plurality of MOS transistor, and photodiode is the light receiving element with photoelectric converting function.The photodiode that is used to form unit pixel 6 has optical receiving surface, and produces a certain amount of signal charge according to the light quantity (intensity) that incides on the optical receiving surface.Unit pixel 6 comprises the transistor (that is a plurality of MOS transistors) that respectively signal charge that photodiode produced is amplified, selects and resets.
On semiconductor substrate 2, be formed with range upon range of wiring layer 7.Range upon range of wiring layer 7 comprises a plurality of interlayer dielectrics 8 and a plurality of wiring layers 9.Interlayer dielectric 8 is to be formed by silicon oxide film, and this silicon oxide film for example is by silicon dioxide (SiO
2) form.A plurality of wiring layers 9 for example are to be formed by different metallic, and are connected to each other through being formed on plug between the layer etc.
In addition, in camera watch region 3, protection is formed on the range upon range of wiring layer 7 with passivating film 10.Passivating film 10 is planarization films, and has light transmission.On passivating film 10, be formed with colour filter 11.On colour filter 11, be formed with a plurality of lenticules 12.
For each photodiode that is used to form unit pixel 6, colour filter 11 is divided into a plurality of colour filters 13.Each colour filter 13 for example is the color filter portions of any color in redness, green and the blueness, and the light of transmission shades of colour component.Each colour filter 13 forms such as predetermined arrays such as so-called Bayer arrays.
For with corresponding each unit pixel 6 of the photodiode that is used to form unit pixel 6, be formed with lenticule 12.Correspondingly, with the mode similar with unit pixel 6, a plurality of lenticules 12 are arranged to matrix form two-dimentionally.Lenticule 12 focuses on incident on the photodiode of corresponding unit pixel 6 from outside light.
Be formed with outside join domain 5 in the outside of peripheral circuit area 4.Externally be formed with electrode pad 14 on the join domain 5.Electrode pad 14 is the parts as the part formation of wiring layer 9, and externally is exposed to the outside in the join domain 5, and wiring layer 9 constitutes range upon range of wiring layer 7.Electrode pad 14 comprises the connection surface 14a that is used to be electrically connected, and is exposed to the outside through connecting surperficial 14a.Connect the uper side surface (front surface) that surperficial 14a forms electrode pad 14.In the present embodiment, electrode pad 14 forms the part of the wiring layer 9a of the superiors.
In the present embodiment, the formation material of electrode pad 14 uses the alloy (AlCu) of aluminium (Al) and copper (Cu).So in the wiring layer that is used to form range upon range of wiring layer 79, the wiring layer 9a of the superiors that is used to form electrode pad 14 is at least formed by AlCu.
Externally be formed with peristome 15 on the join domain 5, peristome 15 is used to make electrode pad 14 to be exposed to the outside.That is to say that peristome 15 forms and makes the connection surface 14a of electrode pad 14 towards the outside.So in the present embodiment, peristome 15 forms on electrode pad 14 and penetrates a passivating film 10 and a part that is used to form the interlayer wiring film 8 of range upon range of wiring layer 7.For example, when plane graph was seen, peristome 15 openings were rectangular-shaped.
In the manufacturing approach of the solid photographic device with said structure 1 of present embodiment, form the electrode pad 14 in the solid photographic device 1 through preliminary treatment.Forming electrode pad 14 on the semiconductor substrate 2 and be used for through removing the stacked film on the electrode pad 14, making electrode pad 14 be exposed to the outside under the state of the stacked film that the range upon range of wiring layer 7, passivating film 10 etc. of coated electrode pad 14 are constituted.Dry etching processing through using etching gas removes the stacked film on the electrode pad 14, thereby the part that is removed stacked film forms peristome 15, and peristome 15 exposes electrode pad 14.
In addition, in preliminary treatment (the formation method that comprises electrode pad 14) subsequent treatment afterwards, promptly in the electrical connection of electrode pad 14 is handled, metal wire 16 is connected to electrode pad 14 through wire bond.In addition; In subsequent treatment; Before carrying out the wire-bonded processing, carry out wafer inspection, scribing processing and back surface grinding processing (rear surface grinding process) etc., wherein wafer inspection carries out through the check measurement (probe test) that uses probe; It is that wafer is cut and separate into a plurality of chips that scribing is handled, and back surface grinding is handled and made the scribing processing be easy to carry out.In scribing is handled, for example, when wafer applies cooling water, through the discoid diamond blade cut crystal of high speed rotating.
In the solid photographic device of making in the above described manner 1; When in above-mentioned subsequent treatment, carrying out the scribing processing; Have the electrode pad 14 that exposes the surperficial 14a of connection and contact with the water (pure water) that is used as cooling water, thus the corrosion (galvanic corrosion) that on the 14a of the connection surface of electrode pad 14, produces patch shape pattern.The generation principle of corrosion on the connection surface 14a of electrode pad 14 (below be called " pad corrosion ") will be described with reference to Fig. 2 below.
The generation principle of pad corrosion
Fig. 2 is the enlarged drawing of the fore-end of the above-mentioned electrode pad 14 that is formed by AlCu.As shown in Figure 2, in scribing is handled, contact with the front surface of processing electrode pad 14 by AlCu, thereby have the aluminium generation ionization and the wash-out aluminium ion (Al of low standard electrode potential as the pure water of cooling water
3+) (referring to arrow A 1) 21.This is based on the following fact: when existing under the situation of dissimilar metal Al and Cu on the front surface of electrode pad 14, water conducts electricity.Electronics that produces owing to the ionization of aluminium and the hydrogen ion (H in the water
+) combine, thereby produce hydrogen (H
2) (oxidation of aluminium and the reduction of hydrogen).In this way, when water contacts with the electrode pad of being processed by AlCu 14, following phenomenon taking place: because galvanic effect, has the metal generation oxidation of substandard electrode potential and be dissolved in water.
In other words, produce the pad reason for corrosion on the front surface of electrode pad 14 and be: owing to exist the standard electrode potential difference to produce potential difference between Al and the Cu, thus the countless local cell of appearance on the front surface of electrode pad 14.Therefore, on the front surface of electrode pad 14, produce above-mentioned galvanic effect, and wash-out aluminium ion 21.
The aluminium ion 21 of wash-out and water reaction become aluminium hydroxide (Al (OH)
3) 22 (seeing arrow A 2).Aluminium hydroxide 22 is product of aluminium ion 21 and water; Silicon (Si) bits 23 are cutting swarfs of the wafer of generation during scribing is handled; Aluminium hydroxide 22 contacts (seeing arrow A 3) with silicon (Si) bits 23, thereby the front surface that has produced through aluminium hydroxide 22 covering silicon bits 23 obtains composition 24.
The aluminium hydroxide of the front surface through coated electrode pad 14, composition 24 is attached to the front surface (connecting surperficial 14a) of electrode pad 14 firmly.In this way; When the composition 24 that forms by aluminium hydroxide 22 and silicon bits 23 during attached to the front surface of electrode pad 14; Form unusual pad, in this unusual pad, composition 24 is attached to neighbouring (the seeing Figure 10 A) of the corrosion of the pad on the front surface of electrode pad 14.
In example shown in Figure 2, on the front surface of the electrode pad 14 that composition 24 is adhered to, exist by aluminium oxide (Al
2O
3) passivation layer 18 that forms.In the processing of handling the connection surface 14a exposure that makes electrode pad 14 through above-mentioned dry etching, and carry out then after the resist lift-off processing, form passivation layer 18 through connection surface 14a and the airborne oxygen reaction that makes electrode pad 14.That is to say that passivation layer 18 is natural oxide films.
In the processing that the connection surface 14a that makes electrode pad 14 exposes, the gas that will comprise fluorine (F) is as the etching gas in the dry etching processing, to be used to that the connection surface 14a of electrode pad 14 is exposed.So fluorine is implanted to the front surface of the electrode pad of being processed by AlCu 14, thereby produce such as aluminum fluoride (AlF
x) wait compound.Owing to have aluminum fluoride etc., on the front surface of electrode pad 14, produce the impurity growth-gen that is known as the F corrosion.Therefore, preferably, increase and to be used for step that the aluminum fluoride that produces on electrode pad 14 front surfaces etc. is removed.To being used to remove the processing of aluminum fluoride etc., for example using the alkali treatment (alkali process) of adopting developing solution etc.Because being removed the front surface of the electrode pad 14 of aluminum fluoride etc. through alkali treatment etc. also is fine aluminium (Al), thus front surface also easily with airborne combination with oxygen.Therefore, on the front surface of electrode pad 14, produce aluminium oxide (Al naturally
2O
3).The aluminium oxide that produces in this way forms passivation layer 18.
In addition, as shown in Figure 2, when in the above described manner from electrode pad 14 wash-out aluminium ions, the part is present in the copper part 14b deposition in the electrode pad 14.
As stated; Owing to the corrosion of the pad on the front surface of electrode pad 14 has produced composition 24; So pad corrosion reduced electrode pad 14 and be connected between the metal wire 16 of electrode pad 14 effective contact area (promptly; Mating surface) (see figure 1), this has caused electrically contacting such as the bad connections such as mechanical engagement intensity that reduce are perhaps bad.In addition, the pad corrosion that on the front surface of electrode pad 14, produces causes outward appearance not good.And the bad contact of electrode pad 14 causes the complaint of user to reliability.
Therefore, in the manufacturing approach of the solid photographic device 1 of present embodiment,, carried out following processing for the pad corrosion that produces on the front surface that suppresses electrode pad 14.
First embodiment of the manufacturing approach of solid photographic device
First embodiment of the manufacturing approach of 3 flowchart text solid photographic device 1 below with reference to accompanying drawings.As shown in Figure 3, the manufacturing approach of present embodiment comprises bonding pad opening processing (S 10).That is to say, in this is handled, handle, remove with the part of the range upon range of wiring layer 7 of coated electrode pad 14 and such as stacked films such as passivating films 10, thereby form peristome 15, so that electrode pad 14 exposes through the dry etching that adopts etching gas to carry out.
Particularly, in the manufacturing approach of present embodiment, at first, cambium layer is folded wiring layer 7 and passivating film 10 successively on semiconductor substrate 2.Then, shown in Fig. 4 A and Fig. 4 B, in bonding pad opening is handled, adopt photomask etc. to make public, and thereby on passivating film 10, form etchant resist 19.Etchant resist 19 is formed in the zone that is not removed with electrode pad 14 corresponding parts.
In addition, as shown in Figure 5, in bonding pad opening is handled (S 10), adopt etching gas to carry out dry etching and handle, thereby through etchant resist 19 etching and remove the stacked film of electrode pad 14 upsides optionally.Therefore, the corresponding peristome 15 of size of formation and electrode pad 14, thus the connection surface 14a of electrode pad 14 is exposed.
Carry out the etching gas that dry etching is handled for being used to, for example use tetrafluoromethane (CF as fluorocarbon class gas
4).At this,, remove CF for etching gas
4Outside the gas, can also use fluoroform (CHF
3) gas, fluoromethane (CH
3F) gas, perfluoroethane (C
2F
6) gas, octafluoropropane (C
3F
8) gas, octafluorocyclobutane (C
4F
8) gas, hexafluoro-1,3-butadiene (C
4F
6) gas, difluoromethane (CH
2F
2) gas or their gaseous mixture.
As shown in Figure 3, carrying out bonding pad opening processing (S10) afterwards, be used to remove the processing (S20) of resist.That is to say that as shown in Figure 6, etchant resist 19 (see figure 5)s that in bonding pad opening is handled, are formed in the above described manner on the passivating film 10 are removed.
Particularly, through using, etchant resist residual on the passivating film 10 19 is separated such as organic solvents such as diluents.
Next, carry out N
2/ Ar Cement Composite Treated by Plasma (S30).That is to say, as shown in Figure 7, carry out Cement Composite Treated by Plasma, so that by nitrogen (N
2) and the N that produces of the mist of argon gas (Ar)
2/ Ar plasma shines the scope of the connection surface 14a (that is the exposed surface of wiring layer 9 (9a)) that comprises pad electrode 14.
For example; For the plasma process conditions of present embodiment, the total flow of nitrogen and argon gas is 10 to 1000sccm, and the ratio of nitrogen and total gas flow rate is 1 to 99%; The pressure of handling atmosphere (atmosphere) is 0.1 to 2Pa; The temperature of handling atmosphere is-30 to 50 ℃, and plasma source power is 100 to 2000W, and the bias power that is applied to wafer one side is 0 to 2000W.At this, the flow (cm of the gas under unit " sccm " the expression normal condition
3/ min).The optimum condition of plasma process conditions is along with discharge mode of plasma etc. and change.
In addition, in the present embodiment, (Electron Cyclotron Resonance, ECR) plasma is with as being used to produce N to use electron cyclotron resonace as a kind of high-density plasma
2The plasma source of/Ar plasma.The Cement Composite Treated by Plasma of present embodiment can be carried out in the process chamber identical with carrying out the above-mentioned bonding pad opening residing process chamber of etching processing in handling, and perhaps also can in the process chamber different with carrying out the residing process chamber of etching processing, carry out.In other words, needn't in the process chamber identical, carry out Cement Composite Treated by Plasma of the present invention, and after etching processing, process object can be carried out drying in air with carrying out the residing process chamber of etching processing.
Then, carry out measurement processing, to confirm the operation (S40) of solid photographic device 1.In this is handled, use probe that wafer is carried out checkout (probe test).
Next, carry out the back surface grinding and handle (S50).In this is handled, operate as follows: grinding operation is carried out on the back surface to the semiconductor substrate 2 that is used to form solid photographic device 1, and the thickness of solid photographic device 1 is polished to constant.Particularly; For example; The grinding stone (grinding stone) that is arranged on the top is moved downward to absorption and remains on the wafer on the platform (being known as rotary chuck etc.), and under wafer and the counterrotating state of grinding stone, grinding stone contacts with the lapped face of wafer with predetermined force.So, come the lapped face of grinding wafers through grinding stone, and grinding wafer fallen predetermined thickness.
In addition, carry out scribing and handle (S60).In this is handled, for example,, utilize the discoid diamond blade cut crystal of high speed rotating when wafer provides cooling water.Thereby wafer-separate is become a plurality of semiconductor chips.
Be assembled into such as electronic installations such as digital cameras by the solid photographic device 1 of individuation in order to handle (S60) owing to scribing, carry out encapsulation process (S70).In encapsulation process, outside collector lens for example is installed, solid photographic device 1 perhaps is installed on packaging body.In this is handled, carry out wire bond and handle, the electrode pad 14 of solid photographic device 1 is electrically connected to the lead frame of packaging body.
In the above-mentioned manufacturing approach of the embodiment of the invention, bonding pad opening is handled the processing that (S10) exposes corresponding to (being formed by the alloy that comprises the two or more metals with various criterion electrode potential) wiring layer on the face side that makes semiconductor substrate 29.In addition, in the present embodiment, wiring layer 9 (9a) comprises electrode pad 14, and electrode pad 14 has the connection surface 14a (exposed surface) that is used to be electrically connected.
In addition, in the manufacturing approach of present embodiment, N
2/ Ar Cement Composite Treated by Plasma (S30) is corresponding to following Cement Composite Treated by Plasma; This plasma processing makes the plasma irradiating that mist produced of nitrogenous gas and inert gas comprise the scope of the exposed surface (9a) (that is the connection of electrode pad 14 surface 14a) of wiring layer 9.That is to say, in the present embodiment, for the mist that produces plasma, adopt nitrogen, and adopt argon gas as inert gas as nitrogenous gas.
In the manufacturing approach of present embodiment, remove processing (S20) afterwards what detect to handle that (S40) reach resist before, carry out N
2/ Ar Cement Composite Treated by Plasma, but be not limited thereto.In the manufacturing approach of present embodiment,, carry out N for the scope of the exposure front surface that comprises electrode pad 14
2/ Ar Cement Composite Treated by Plasma, thus suppressed basically owing to the front surface of electrode pad 14 in scribing is handled and the pad corrosion that the contact between the water produces.
At last, carrying out N
2/ Ar Cement Composite Treated by Plasma (S30) afterwards, the manufacturing approach of present embodiment comprises that scribing handles, with semiconductor substrate 2 cuttings and separate into a plurality of chips (S60).So, as long as N
2/ Ar Cement Composite Treated by Plasma is to handle (S10) in bonding pad opening to handle (S60) before afterwards and in scribing, can adopt any opportunity.
That is to say, in the manufacturing approach of present embodiment, can handle (S 10) and resist in bonding pad opening and remove between the processing (S20) and carry out N
2/ Ar Cement Composite Treated by Plasma.In addition, can also between the milled processed (S50) that detects processing (S40) and surface, back, carry out N
2/ Ar Cement Composite Treated by Plasma.In addition, can also between back surperficial milled processed (S50) and scribing processing (S60), carry out N
2/ Ar Cement Composite Treated by Plasma.
At this, handle (S10) and resist in bonding pad opening and remove between the processing (S20) and carry out N
2Under the situation of/Ar Cement Composite Treated by Plasma, should note.The situation of etchant resist 19 is arranged or similarly under the situation significantly residual on the passivating film 10, based on plasma process conditions, wafer state etc., sclerosis may take place and cause and be difficult to remove resist in etchant resist 19.Therefore, remove step (S20) at resist and carry out N before
2Under the situation of/Ar Cement Composite Treated by Plasma, plasma process conditions is arranged so that resist is not hardened.
Above-mentioned manufacturing approach according to present embodiment; Can suppress to cause going up the appearance of the reducing of bond strength on the connection surface 14a of the pad burn into electrode pad 14 that produces, bad outward appearance etc. at the connection surface 14a (that is the exposed surface of wiring layer 9 (9a)) of electrode pad 14 owing to the water in scribing processing etc. and the contact that is connected surface 14a of electrode pad 14.The evaluation mechanism (estimation mechanism) of above-mentioned effect will be described below.
Evaluation mechanism
In the solid photographic device 1 of present embodiment, when carrying out above-mentioned N
2During/Ar Cement Composite Treated by Plasma, different reactions partly with in the Cu part takes place in the AlCu on the front surface of electrode pad 14.That is to say, as shown in Figure 8, in the electrode pad of processing by AlCu 14 and since the local copper part 14b that exists as electrode pad 14 by N
2The front surface of/Ar plasma irradiating exists; So have the AlCu front surface portion 31 and the local Cu front surface portion 32 that exists that account for major part; AlCu front surface portion 31 is front surface portion of AlCu, and Cu front surface portion 32 is front surface portion of copper part 14b.In addition, on AlCu front surface portion 31 and Cu front surface portion 32, through N
2/ Ar Cement Composite Treated by Plasma obtains different effects.
Particularly, in the part of AlCu front surface portion 31, as stated, after the connection surface 14a that makes electrode pad 14 is exposed to air, form passivation layer 18.In general, passivation layer 18 is by aluminium oxide (Al
2O
3) form.Owing to pass through N
2The part that is formed with passivation layer 18 of/Ar plasma irradiating AlCu front surface portion 31, thus the irradiation etching passivation layer 18 of Ar ion passed through, and make passivation layer 18 nitrogenize.
Therefore, on AlCu front surface portion 31, carry out N
2During/Ar Cement Composite Treated by Plasma, not by nitrogenize, and be etched through the sputter process that causes by the Ar ion at high stability passivation layer 18 of initial period.And, when removing passivation layer 18, on front surface, expose fine aluminium through sputter process.If on front surface, expose fine aluminium, combine with Al by the nitrogen of plasma exciatiaon (base, ion), to begin the nitrogenize of Al.
As shown in Figure 9, along with aluminium by nitrogenize, form aluminium nitride (AlN) layer 34.AlN is the compound of chemical stabilization, and therefore aln layer 34 is used as the barrier layer during scribing is handled, to stop pure water.By this way, through N
2The irradiation of/Ar plasma, AlCu front surface portion 31 is by nitrogenize.To this, (XPS) obtains following result through X-ray spectral analysis: in the part of AlCu front surface portion 31, detect nitrogen.
On the other hand, through using N
2/ Ar plasma irradiating, the part generation nitrogenize of Cu front surface portion 32, thus form Cu-N layer 33.Cu-N is a kind of compound of chemical stabilization, and therefore during scribing was handled, Cu-N layer 33 was as the barrier layer, to stop pure water.That is to say, when using N
2During/Ar plasma irradiating Cu front surface portion 32 a part of, on Cu front surface portion 32, form Cu-N layer 33, and utilize Cu-N layer 33 to stop that AlCu part and copper part 14b in the electrode pad 14 contact with the direct of water.Therefore, do not produce galvanic effect on the front surface of electrode pad 14, thereby prevent that aluminium is by wash-out.Thereby, can prevent on the front surface of electrode pad 14, to produce the pad corrosion.
That is to say, in the manufacturing approach of present embodiment, because N
2Be used to produce plasma with the mist of Ar; So the nitrogenize on the nitrogenize on the removal of the passivation layer 18 that causes owing to the sputtering operation of Ar, the aluminium surface that causes owing to the removal of passivation layer 18 and the Cu surface of wash-out is carried out simultaneously, thereby with the whole nitrogenize of the front surface of electrode pad 14.Therefore, at the front surface formation moisture-impermeable barrier layer of electrode pad 14, thereby suppressed the pad corrosion.
In this way; In the manufacturing approach of present embodiment; Can be in the Al of the front surface (part of Cu front surface portion 32) of the metal among the metal that is used to form electrode pad 14 (that is the Cu in the present embodiment) and AlCu front surface portion 31 part by the while nitrogenize with high standard electrode potential.Therefore, corrode owing to prevented the pad that causes by galvanic effect, thus can make electrode pad 14 remain smooth state, and can prevent the deterioration of the bond strength of wire-bonded.
As stated; Manufacturing approach according to present embodiment; Owing to can under the situation of avoiding the pad corrosion, form electrode pad 14; So increased the connection surface 14a of electrode pad 14 and the contact area of the metal line that is connected through wire-bonded 16, increased bond strength, realized good electrical connection.Thereby can improve the reliability of wire-bonded.
In addition, because the contact area increase of the connection of electrode pad 14 surface 14a and metal line 16, so connect surplus (margin) increase on the surperficial 14a, thus be easy to tackle the dimension shrinks of electrode pad 14 in recent years.In addition, in electrode pad 14,,, can significantly reduce the time of handling customer complaint so improved the reliability of wire-bonded because the pad corrosion does not take place.
In addition, according to the manufacturing approach of present embodiment, the Al that can suppress to be caused by F (fluorine) on the front surface of electrode pad 14 corrodes.Particularly, N
2The irradiation of/Ar plasma causes above-mentioned sputtering phenomenon.Through by N
2The sputtering operation that/Ar plasma causes is with the some nm of top layer etching of electrode pad 14.Therefore, the F that will be present in around the front surface of electrode pad 14 removes, and with the amount of the F that reduces AlCu front surface portion 31, and suppresses the corrosion that caused by F.To this, (XPS) obtains following result through X-ray spectral analysis: through N
2The irradiation of/Ar plasma has reduced the amount of the F in the part of AlCu front surface portion 31.
The solid photographic device 1 of the manufacturing approach manufacturing through present embodiment has following structure.That is to say that the solid-state image pickup transducer of present embodiment comprises: semiconductor substrate 2 (see figure 1)s; Electrode pad 14 on a face side of semiconductor substrate 2 (that is, by the formed wiring layer 9 of the alloy A lCu that comprises two or more metals) with various criterion electrode potential; And nitration case, it receives N at electrode pad 14
2During/Ar plasma irradiating, be formed on the N that receives of electrode pad 14
2On the top layer on the surface of/Ar plasma irradiating.This nitration case is to be formed by the aluminium of the front surface that is used to form electrode pad 14 and two kinds of metals of Cu.The solid photographic device 1 of present embodiment comprises: Cu-N layer 33 and alumina layer 34; Cu-N layer 33 is in aluminium and Cu, to have the nitration case that forms on the Cu top layer partly of higher standard electrode potential, and alumina layer 34 is the nitration case (see figure 9)s that on the top layer of Al part, form.
As stated,, can suppress the pad corrosion, and improve the bond strength of wire-bonded according to the solid photographic device with said structure 1 of present embodiment.
Figure 10 A and Figure 10 B represent the photo of the front surface of the electrode pad that electrode pad of making through existing method and the manufacturing approach of passing through present embodiment are made respectively.Figure 10 A representes that the situation of existing manufacturing approach (that is, do not carry out N
2The situation of/Ar Cement Composite Treated by Plasma) under, scribing is handled and (to be seen Fig. 3, S60) afterwards the photo of front surface of electrode pad.Can know from the photo of Figure 10 A, make under the situation of solid photographic device 1, because corrosion produces patch shape pattern on the front surface of electrode pad through existing method.As stated, cause galvanic effect, thereby produce this pad corrosion owing to pure water during handling in scribing contacts with the front surface of electrode pad.
On the other hand, Figure 10 B is illustrated under the situation that adopts the present embodiment manufacturing approach and (that is, is carrying out N
2Under the situation of/Ar Cement Composite Treated by Plasma), scribing is handled and (to be seen Fig. 3, S60) afterwards the photo of front surface of electrode pad.Can know from the photo of Figure 10 B,, suppress the pad corrosion on the front surface of electrode pad according to the manufacturing approach of present embodiment.Can know that from the comparative result of Figure 10 A and Figure 10 B in this way, the manufacturing approach of present embodiment has significantly suppressed the pad corrosion on the front surface of electrode pad.
Next, with the measurement result example of the bond strength of the wire-bonded in the situation of situation and the manufacturing approach that present embodiment is adopted of the explanation manufacturing approach that prior art adopted.Shown in figure 11; When measuring; Through apply the stress (seeing arrow F1) of predetermined direction and predetermined size to the bonding part of metal line 16 16a (it is connected to the connection surface 14a of electrode pad 14 through wire-bonded); Measure shear strength (shear strength) (that is the bond strength of wire-bonded).
Figure 12 representes the example of measurement result.In chart shown in Figure 12, be used to represent that the longitudinal axis of bond strength has unit arbitrarily.Shown in figure 12, in the example of this measurement result,, under the situation that adopts the present embodiment manufacturing approach, obtained the bond strength more than 1.5 times with the contrast of manufacturing approach of the prior art.In this way, the manufacturing approach that has proved present embodiment (has wherein been carried out N
2/ Ar Cement Composite Treated by Plasma) effect aspect the bond strength of wire-bonded.
Second embodiment of the manufacturing approach of solid photographic device
Second embodiment of manufacturing approach will be described below.The manufacturing approach of present embodiment is with the different of manufacturing approach of first embodiment: between bonding pad opening processing and Cement Composite Treated by Plasma, comprise the processing of removing of passivation layer 18.Therefore, adopt identical Reference numeral for the part identical, and will suitably omit its explanation with the manufacturing approach of first embodiment.
The manufacturing approach of present embodiment will be described with reference to flow chart shown in Figure 13.Shown in figure 13, with the mode identical, in the manufacturing approach of present embodiment,, carry out resist and remove processing (S120) carrying out bonding pad opening processing (S110) afterwards with first embodiment.And, in the manufacturing approach of present embodiment, remove processing (S120) afterwards carrying out resist, use argon gas to carry out Ar sputter process (S130).
Carry out the Ar sputter process, with the passivation layer 18 that forms on the front surface of removing electrode pad 14.As stated, because the connection of electrode pad 14 surface 14a is exposed in the air, on the front surface of electrode pad 14, form passivation layer 18.Passivation layer 18 mainly is created in the electrode pad 14 lip-deep AlCu front surface portion 31.
Therefore, shown in Figure 14 A, in the Ar sputter process, the front surface of the Ar plasma irradiating electrode pad 14 that produces by argon gas.Thereby, shown in Figure 14 B, the passivation layer on the front surface that is formed on electrode pad 14 18 is removed.For the processing that is used to remove the passivation layer 18 on the front surface that is formed on electrode pad 14; For example can use; The etching processing that utilization is undertaken by the irradiation of the plasma that chlorine-based gas produced or adopt the wet etching treatment etc. of the base compound be expressed as TMAH (TMAH) replaces the Ar sputter process.
Next, carry out N
2Cement Composite Treated by Plasma or N
2/ Ar Cement Composite Treated by Plasma (S140).In the manufacturing approach of present embodiment, at N
2(perhaps N
2/ Ar) in the Cement Composite Treated by Plasma, remove passivation layer 18 in advance, thus shown in figure 15, N
2(perhaps N
2/ Ar) the front surface of the abundant irradiation electrode pad 14 of plasma.
In the manufacturing approach of present embodiment; Owing to remove passivation layer 18 before in advance, so in this plasma treatment step (S140), can use by comprising nitrogen but do not comprise the plasma that the gas such as inert gases such as Ar produces at plasma treatment step (S140).So in the manufacturing approach of present embodiment, the Cement Composite Treated by Plasma in plasma treatment step (S140) can be N
2Cement Composite Treated by Plasma.
That is to say, as stated because Ar is heavy element comparatively speaking, thus when Ar by ionization, produce sputtering phenomenon receiving on the side of plasma irradiating.On the other hand, because nitrogen (N) is light element comparatively speaking, so although there is difference such as plasma process conditions, at N
2Can take place hardly in the Cement Composite Treated by Plasma and the similar sputtering phenomenon of Ar situation.With regard to this point in fact, if increase the bias power as plasma process conditions, then electric field strength increases, so the nitrogen of ionization has lot of energy, thereby sputtering phenomenon may occur.
In plasma treatment step, carrying out N
2Under the situation of Cement Composite Treated by Plasma, with and N
2The similar mode of/Ar Cement Composite Treated by Plasma is carried out Cement Composite Treated by Plasma, so that nitrogen (N
2) N that produced
2Plasma irradiating comprises the scope of the connection surface 14a (that is the exposed surface of wiring layer 9 (9a)) of electrode pad 14.
In addition, measurement processing (S150), the back surface grinding that is used to confirm the operation of solid photographic device 1 successively handled (S160), scribing and handled (S170) and encapsulation process (wire-bonded) (S180).
In the above-mentioned manufacturing approach of present embodiment, with the mode similar, handle in (S110) in bonding pad opening with the manufacturing approach of first embodiment, go up at the connection surface 14a (exposed surface) of electrode pad 14 and form passivation layer 18.In addition, handle (S110) and N in bonding pad opening
2Carry out the processing of removing of passivation layer 18 between the/Ar Cement Composite Treated by Plasma (S140).That is to say that in the manufacturing approach of present embodiment, Ar sputter process (S130) is corresponding to the processing of removing of passivation layer 18.
In addition, in the manufacturing approach of present embodiment, carry out N
2/ Ar Cement Composite Treated by Plasma or N
2The step of Cement Composite Treated by Plasma (S140) is corresponding to the step of carrying out following Cement Composite Treated by Plasma: make the plasma irradiating that plasma or nitrogenous gas produced that mist produced that comprises nitrogen and inert gas comprise the scope of the exposed surface (that is the connection of electrode pad 14 surface 14a) of wiring layer 9 (9a).That is to say, in the present embodiment,, adopt N for the gas that is used to produce plasma
2Gas adopts Ar gas as inert gas as nitrogenous gas.
In the manufacturing approach of present embodiment, the Ar sputter process is at N
2(perhaps N
2/ Ar) Cement Composite Treated by Plasma (S140) before and remove processing (S120) at resist and carry out afterwards and can be handled (S110) and resist in bonding pad opening and remove between the processing (S120) and carry out.
In addition, in the manufacturing approach of present embodiment, as long as N
2(perhaps N
2/ Ar) Cement Composite Treated by Plasma is after the Ar sputter process and handles (S60) in scribing and carry out before, this process can be in office when machine carries out.Here, with the mode similar, handle (S110) and resist in bonding pad opening and remove between the processing (S120) and carry out N with the manufacturing approach of above-mentioned present embodiment
2(perhaps N
2/ Ar) under the situation of Cement Composite Treated by Plasma, should be noted that resist film 19 possibly be cured based on plasma process conditions, wafer state etc.
According to the above-mentioned manufacturing approach of present embodiment, with the mode similar, can suppress the generation of pad corrosion, thereby prevent that bond strength on the connection surface 14a of electrode pad 14 from reducing, bad order etc. with first embodiment.Under the situation of present embodiment, draw above-mentioned effect through following evaluation mechanism.
Evaluation mechanism
In the manufacturing approach of present embodiment, shown in figure 15, because at N
2(perhaps N
2/ Ar) removed passivation layer 18 on the front surface of electrode pad 14 in the Cement Composite Treated by Plasma, so N
2(perhaps N
2/ Ar) plasma shines AlCu front surface portion 31 and Cu front surface portion 32 equably.Thereby, with the mode similar, through N with first embodiment
2(perhaps N
2/ Ar) irradiation of plasma comes the part of nitrogenize Cu front surface portion 32, thus form Cu-N layer 35.
On the other hand, with a part of similar mode of Cu front surface portion 32, through N
2(perhaps N
2/ Ar) irradiation of plasma comes the part of nitrogenize AlCu front surface portion 31, thus form aluminium nitride (AlN) layer 36.AlN is a kind of compound of chemical stabilization, and therefore aln layer 36 is used as the barrier layer during scribing is handled, to stop pure water.
That is to say, utilize aln layer 36 and Cu-N layer 35 to stop the part of the AlCu in the electrode pad 14 directly to contact with pure water respectively with copper part 14b.Thereby, on the front surface of electrode pad 14, do not produce galvanic effect, and prevent that aluminium is by wash-out.Thereby, can prevent to take place on the front surface of electrode pad 14 the pad corrosion.
In this way; Though carried out the nitrogenize of front surface of removal and the Al and the Cu of passivation layer 18 in the manufacturing approach of first embodiment simultaneously; But in the manufacturing approach of present embodiment, carried out respectively utilizing Ar sputter process (irradiation of Ar plasma) passivation layer 18 removal and utilize N
2(perhaps N
2/ Ar) the nitrogenize of the front surface of Al and the Cu of plasma, thereby with front surface (comprising Cu front surface portion 32 and the AlCu front surface portion 31) nitrogenize fully of electrode pad 14.Therefore, formed moisture-impermeable barrier layer, to suppress the generation of pad corrosion at the front surface of electrode pad 14.That is to say,,, prevent the deterioration of the bond strength of wire-bonded so can make electrode pad 14 keep smooth states because the pad of having avoided being caused by galvanic effect corrodes.
The solid photographic device 1 of the manufacturing approach manufacturing through present embodiment has following structure.That is to say that the solid-state image pickup transducer of present embodiment comprises: semiconductor substrate 2 (see figure 1)s; Electrode pad 14 on a face side of semiconductor substrate 2 (that is, by comprising the two or more formed wiring layers 9 of alloy A lCu) with metal of various criterion electrode potential; And nitration case, it receives N at electrode pad 14
2(N
2/ Ar) during plasma irradiating, be formed on the N that receives of electrode pad 14
2(N
2/ Ar) on the top layer on the surface of plasma irradiating.The solid photographic device of present embodiment comprises aln layer 36 and Cu-N layer 35; Aln layer 36 is nitration cases that the part of AlCu front surface portion 31 is formed by nitrogenize, and Cu-N layer 35 is nitration cases (seeing Figure 15) that the part of Cu front surface portion 32 is formed by nitrogenize.
As stated,, can suppress the pad corrosion, improve the bond strength of wire-bonded according to the solid photographic device with said structure 1 of present embodiment.
The 3rd embodiment of the manufacturing approach of solid photographic device
The 3rd embodiment of manufacturing approach will be described below.The manufacturing approach of present embodiment is with the different of manufacturing approach of first embodiment: carry out N
2Cement Composite Treated by Plasma is with as the Cement Composite Treated by Plasma in the plasma treatment procedure.Therefore, adopt identical Reference numeral for the part identical, and will suitably omit its explanation with the manufacturing approach of first embodiment.
Will be with reference to the manufacturing approach of the flowchart text present embodiment of Figure 16.Shown in figure 16, with the mode similar, in the manufacturing approach of present embodiment,, carry out resist and remove processing (S220) carrying out bonding pad opening processing (S210) afterwards with first embodiment.In addition, in this manufacturing approach, remove processing (S220) afterwards carrying out resist, carry out N
2Cement Composite Treated by Plasma (S230).Carrying out N
2Cement Composite Treated by Plasma (S230) afterwards; With the mode similar with the manufacturing approach of first embodiment, the detection that is used to confirm the operation of solid photographic device 1 is successively handled (S240), back surface grinding and is handled (S250), scribing and handle (S260) and encapsulation process (wire-bonded) (S270).
In the manufacturing approach of present embodiment, with the mode similar, handle in (S210) in bonding pad opening with the manufacturing approach of above-mentioned first embodiment, on the connection surface 14a (exposed surface) of electrode pad 14, formed passivation layer 18.
In addition, in the manufacturing approach of present embodiment, N
2Plasma treatment procedure (S230) is corresponding to following following plasma treatment procedure; This plasma processing procedure makes plasma that nitrogenous gas produces shine the scope of the exposed surface (that is the connection of electrode pad 14 surface 14a) that comprises wiring layer 9 (9a).That is to say, in the present embodiment,, adopt N for the gas that is used to produce plasma
2Gas is as nitrogenous gas.
In addition, in the manufacturing approach of present embodiment, with the mode similar, as long as N with the manufacturing approach of first embodiment
2(perhaps N
2/ Ar) plasma treatment procedure is to handle (S210) in bonding pad opening to carry out before afterwards and in scribing processing (S260), this processing can be adopted any opportunity.Here, with the mode similar, handle (S210) and resist in bonding pad opening and remove between the processing (S220) and carry out N with the manufacturing approach of above-mentioned present embodiment
2Under the situation that Cement Composite Treated by Plasma is handled, should be noted that resist film 19 possibly be cured based on plasma process conditions, wafer state etc.
With the mode similar, according to the manufacturing approach of above-mentioned present embodiment, can suppress the generation of pad corrosion, thereby prevent that bond strength on the connection surface 14a of electrode pad 14 from reducing, bad order etc. with first embodiment.For the situation of present embodiment, obtain above-mentioned effect through following assessment mechanism.
Assessment mechanism
In the solid photographic device 1 of present embodiment,, produced different effects in the AlCu front surface portion 31 on the front surface of electrode pad 14 and the Cu front surface portion 32 through Cement Composite Treated by Plasma.
Particularly, the part of AlCu front surface portion 31 receives N
2Nitrogenize does not take place in the irradiation of plasma.This is because passivation layer 18 is by the aluminium oxide (Al on the part of the AlCu front surface portion 31 of the front surface of electrode pad 14
2O
3) form.
That is to say, as stated, be coated with passivation layer 18 owing to be formed with the part of the high passivation layer 18 of stability on its of AlCu front surface portion 31, so this part receives N
2The irradiation of plasma can nitrogenize.To this, (XPS) obtains following result through X-ray spectral analysis: in the part of AlCu front surface portion 31, do not find nitrogen.
That is to say,, form passivation layer 18, so aluminium is not by N as aluminium oxide because the aluminium in the part of AlCu front surface portion 31 mainly combines with oxygen (O)
2Pecvd nitride.
On the other hand, shown in figure 17, through N
2The irradiation nitrogenize of plasma the part of Cu front surface portion 32, thereby form Cu-N layer 37.Cu-N is a kind of compound of chemical stabilization, thereby Cu-N layer 37 is used as the barrier layer during scribing is handled, to stop pure water.That is to say, when passing through N
2During/Ar plasma irradiating Cu front surface portion 32 a part of, on Cu front surface portion 32, form Cu-N layer 37, thereby utilize Cu-N layer 37 to stop AlCu part and copper part 14b in the electrode pad 14 directly to contact with pure water.Therefore, do not produce galvanic effect on the front surface of electrode pad 14, prevented that aluminium is by wash-out.Therefore, can prevent to produce on the front surface of electrode pad 14 the pad corrosion.
That is to say; In the manufacturing approach of present embodiment; In the metal that is used to form electrode pad 14, the front surface (part of Cu front surface portion 32) that only has the metal (that is the Cu in the present embodiment) of high standard electrode potential can be by optionally nitrogenize.Thereby, owing to the pad corrosion of having avoided causing by galvanic effect, thus can make the front surface of electrode pad 14 keep smooth state, thus prevent the bond strength deterioration of wire-bonded.
In this way; Though in first embodiment and second embodiment fully nitrogenize the front surface of electrode pad 14 (comprising Cu front surface portion 32 and AlCu front surface portion 31); But in the manufacturing approach of present embodiment, the part nitrogenize do not form the part of passivation layer 18 in the Cu front surface portion 32.That is to say, in the manufacturing approach of present embodiment, as stated, through using almost at N
2Do not produce in the Cement Composite Treated by Plasma sputtering phenomenon operation, through in the part that passivation layer 18 is retained in AlCu front surface portion 31, and, can prevent on the front surface of electrode pad 14, galvanic effect to occur through in the part of Cu front surface portion 32, forming Cu-N layer 37.Thereby, owing to the pad corrosion of having avoided causing by galvanic effect, thus can make the front surface of electrode pad 14 keep smooth state, thus prevent the bond strength deterioration of wire-bonded.
Utilize the solid photographic device 1 of the manufacturing approach manufacturing of present embodiment to have following structure.That is to say; The solid-state image pickup transducer of present embodiment comprises: semiconductor substrate 2 (see figure 1)s, electrode pad 14, nitration case and passivation layer 18; Electrode pad 14 be on a face side of semiconductor substrate 2 by comprising the two or more formed wiring layers 9 of alloy A lCu with metal of various criterion electrode potential, nitration case is to receive N at electrode pad 14
2Receiving N during plasma irradiating
2Form on the top layer on the surface of the electrode pad 14 of plasma irradiating; Passivation layer 18 is that the top layer owing to electrode pad 14 is passivated and forms.Shown in figure 17, the solid photographic device of present embodiment comprises the Cu-N layer 37 as nitration case, and Cu-N layer 37 is formed in having than the nitration case on the Cu top layer partly of higher standard electrode potential among Al and the Cu.
As stated,, can suppress the pad corrosion, improve the bond strength of wire-bonded according to the solid photographic device with said structure of present embodiment.
In the above-described embodiments, use the receive N of the connection surface 14a of electrode pad 14 as wiring layer 9
2/ Ar plasma or N
2The exposed surface of plasma irradiating also can use any part that might during scribing processing etc., contact with the water exposed surface as wiring layer 9.
In addition, in the above-described embodiments, receive N
2/ Ar plasma or N
2The wiring layer 9 (9a) (electrode pad 14) of plasma irradiating is to be formed by AlCu, but as long as it is to comprise two or more alloys with metal of various criterion electrode potential, does not have other particular restriction.Like this; In the present embodiment; For the wiring layer that receives plasma irradiating; For example; Use comprises selects the wiring layer material of the alloy of two or more metals as semiconductor substrate from following metal, such as the strontium that can use standard electrode potential to reduce successively (Sr), magnesium (Mg), scandium (Sc), thorium (Th), beryllium (Be), aluminium (Al), titanium (Ti), zirconium (Zr), manganese (Mn), vanadium (V), tantalum (Ta), zinc (Zn), gallium (Ga), iron (Fe), cadmium (Cd), cobalt (Co), nickel (Ni), molybdenum (Mo), tin (Sn), plumbous (Pb), ruthenium (Ru), copper (Cu), silver (Ag), palladium (Pd), gold (Au) etc.
In the present embodiment, receive N for being used to form
2/ Ar plasma or N
2The metal of the wiring layer 9 of plasma irradiating adopts the alloy that comprises aluminium and copper (AlCu) among the above-mentioned metal, wherein compares with aluminium, and copper is noble metal (having higher standard electrode potential).The purpose of in the main wiring of aluminium, sneaking into other metal is in order to improve the reliability of wiring.Therefore, consider aspects such as versatility, receive N
2/ Ar plasma or N
2The preferably following aluminium alloy of the wiring layer 9 of plasma irradiating, this aluminium alloy comprises aluminium and the metal more expensive than aluminium.
In addition, in the above-described embodiments, adopt N
2The plasma that/Ar plasma produces as the mist by nitrogenous gas and inert gas, and adopt N
2Plasma still the invention is not restricted to this as the plasma that is produced by nitrogenous gas.Nitrogenous gas comprises that at least a in nitrogen, ammonia and the Nitrogen trifluoride, inert gas comprise at least a in argon, xenon, helium and the neon.Here, because the N that the foregoing description uses
2/ Ar plasma or N
2Plasma is generally used for wafer process, thus be easy to introduce and operation cost aspect be effective.
In addition; In the above-described embodiments; For the plasma source that is used to produce plasma; Use Ecr plasma (ECR plasma), replace Ecr plasma but also can use such as inductively coupled plasma (ICP) or capacitive coupling (parallel-plate) plasma (CCP).In order to obtain above-mentioned effect, preferred use for example has 10
9Cm
-3The high-density plasma of above ionized state.
In addition, in the Cement Composite Treated by Plasma of carrying out in the above-described embodiments, following treatment conditions have been used rightly.When carrying out plasma irradiating, the bias power that is applied on the wafer is preferably 0 to 2000W.In addition, the pressure of processing atmosphere is preferably 0.1 to 2Pa.In addition, the temperature of processing atmosphere is preferably-30 to 50 ℃.
As stated, in the present invention, consider owing to contacting with water to produce the pad corrosion that galvanic effect produces that in the stage before wiring layer contacts with water, wiring layer receives plasma (for example, N such as electrode pad 14 wiring layers such as grade as predetermined alloy
2/ Ar plasma) irradiation.Owing in the part that different kinds of metals contacts with each other, also produce galvanic effect; Therefore in the present invention; Except comprising that such as electrode pad 14 grades the alloy of the metal with various criterion electrode potential, the object of plasma irradiating also comprises the contact portion that is formed by the metal with various criterion electrode potential.
So; In the present invention, manufacturing approach can comprise predetermined process and Cement Composite Treated by Plasma, said predetermined process on a face side of semiconductor substrate 2, produce contact site (below be called " dissimilar metal contact portion "; Promptly; In this contact portion, two or more metals with various criterion electrode potential contact with each other), the plasma that said Cement Composite Treated by Plasma is used to make the mist of nitrogenous gas and inert gas to produce shines the scope that comprises the dissimilar metal contact portion.
For the predetermined process that is used to produce the dissimilar metal contact portion, for example be used to form the processing of barrier metal, this barrier metal forms the reliability that for example is used for improving the wiring layer 9 that solid photographic device 1 uses.Barrier metal 38 forms the form of layer at (that is, between wiring layer 9 and interlayer dielectric 8) on the wiring layer 9.Thereby during each in the manufacturing approach of solid photographic device handled, under the stage condition before bonding pad opening is handled, barrier metal 38 was positioned on the front surface of electrode pad 14 (it forms a part of (see figure 1) of the wiring layer 9a of the superiors).
In addition, shown in figure 18, as stated, handle in (for example, the S 10 among Fig. 5) in bonding pad opening, handle through dry etching and removed the barrier metal 38 that connects on the surperficial 14a, with the connection surface 14a of exposed pad electrode 14.That is to say,, removed the barrier metal 38 that connects on the surperficial 14a for the electrical connection on the connection surface 14a that realizes electrode pad 14.
Shown in figure 18, owing to removed the barrier metal 38 on the surperficial 14a of the connection of electrode pad 14, so handling in the opening portion 15 that forms through dry etching, barrier metal 38 is exposed in the sidewall sections of opening portion 15.In other words, after etching the side surface of residual barrier metal 38 as the part of the inner wall surface that constitutes opening portion 15 and towards opening portion 15.
For example, barrier metal 38 is through forming such as sputtering method, chemical vapor deposition (CVD) method, ald methods such as (ALD).So, be formed under the situation on the electrode pad 14 at barrier metal 38, through using processing that methods such as sputter form barrier metal 38 corresponding to the predetermined process that is used to produce the dissimilar metal contact portion.
In this way, owing on Metal Contact electrode pad 14, form barrier metal 38, the contact site of electrode pad 14 and barrier metal 38 becomes dissimilar metal contact portion 39.Expose dissimilar metal contact portion 39 through peristome 15.Because dissimilar metal contact portion 39 contacts with water in scribing is handled, so through galvanic effect wash-out metal ion, thereby the pad corrosion produced through above-mentioned mechanism.
That is to say, be exposed under the situation in the opening portion 15, if the operation of having carried out dissimilar metal contact portion 39 is contacted with water (that is, scribing is handled) then produces galvanic effect in dissimilar metal contact portion 39 in dissimilar metal contact portion 39.So, as with the compared with metal that forms barrier metal 38 be that the low electrode pad 14 (wiring layer 9) of metal that waits dissolves, and with above-mentioned Al and Cu between the similar mode of situation that concerns, generation pad corrosion phenomenon.
Particularly, for example, barrier metal 38 is to be formed by Ta.With the mode similar with Cu, compare with Al, Ta is a kind of metal with high standard electrode potential.Thereby; When pure water in scribing is handled when dissimilar metal contact portion 39 between electrode pad 14 and the barrier metal 38 contacts; Because galvanic effect, it is poor to have the metal Ta of high standard electrode potential and have between the metal A l of substandard electrode potential appearance potential.Thereby the metal A l with substandard electrode potential is dissolved in the pure water, becomes the Al ion of being deprived electronics.The Al ion 21 of wash-out and water reaction becoming aluminium hydroxide 22, and contact with the silicon bits 23 that in scribing is handled, produce produce thus and cover silicon through aluminium hydroxide 22 and consider composition 24 (see figure 2)s that 23 front surface obtains to be worth doing.So, on the front surface of electrode pad 14, produce the pad corrosion.
So, shown in figure 18, with the mode same, through such as N with the foregoing description
2Plasma or N
2/ Ar plasma irradiating dissimilar metal contact portion 39 (contact portion of electrode pad 14 and barrier metal 38); Thereby can wait the galvanic effect that prevents in the dissimilar metal contact portion 39 through the nitridation reaction that causes by plasma, and produce the pad corrosion on the front surface of inhibition wiring layer.
As stated, except connection surface 14a alloys such as (exposed surfaces of wiring layer 9) part such as electrode pad 14, N
2Plasma irradiation objects such as/Ar plasma also comprise the dissimilar metal contact portion that the contact site such as electrode pad 14 and barrier metal 38 grades and produces galvanic effect.In this way, except the alloy part, also the dissimilar metal contact site is carried out N
2The Cement Composite Treated by Plasma of/Ar plasma etc.; Thereby with the mode same with the foregoing description; The pad corrosion that can suppress to produce on the front surface of electrode pad 14 reduces bad order etc. with what avoid that the pad corrosion causes bond strength on the connection surface 14a of electrode pad 14.
The topology example of electronic equipment
The solid photographic device of the foregoing description is applied in the various electronic installations, for example, is known as the digital camera or the DV of digital camera, perhaps have mobile phone or other device of camera function.To video camera 50 be described with reference to Figure 19 below, video camera 50 is the examples of electronic installation that comprise the solid photographic device of the foregoing description.
Drive circuit 54 is used to drive solid photographic device 51.Drive circuit 54 produces drive signal (timing signal), and to solid photographic device 51 signal is provided, and this drive signal is used for driving solid photographic device 51 according to scheduled timing.Through the drive signal from drive circuit 54 being provided, control the transmission operation etc. of the signal electrode of solid photographic device 51 to solid photographic device 51.That is to say that solid photographic device 51 utilizes the drive signal that provides from driving circuit 54, has carried out the transmission operation of signal charge etc.
Drive circuit 54 has the function that produces various pulse signals; The pulse signal that produces is the drive signal that is used to drive solid photographic device 51; Drive circuit 54 also has driver functions, to convert the pulse signal that produces to be used to drive solid photographic device 51 driving pulse.Drive circuit 54 also produces and is provided for controlling the drive signal of the operation of fast door equipment 53.
In the video camera with said structure 50, drive circuit 54 serves as uses drive portion, is used to drive the drive signal of solid photographic device 51 with generation.In addition; The video camera that comprises solid photographic device 51 50 according to present embodiment; The pad that the exposed surface that can be suppressed at solid photographic device 51 wiring layers in the scribing processing etc. produces when contact with water corrodes, thereby prevents to corrode the reducing of bond strength on the exposed surface that causes wiring layer, bad order etc. because of pad.
Designing requirement and other factors it will be appreciated by those skilled in the art that as long as in the scope of accompanying claims of the present invention or its equivalent, just can carry out various modifications, combination, inferior combination and replacement according to these designing requirements and other factors.
Claims (13)
1. the manufacturing approach of a semiconductor device said method comprising the steps of:
The wiring layer that is formed by alloy is exposed on the face side of semiconductor substrate, and said alloy comprises two or more metals with various criterion electrode potential; And
Carry out Cement Composite Treated by Plasma, so that plasma that is produced by the mist of nitrogenous gas and inert gas or the plasma that produced by nitrogenous gas shine the scope of the exposed surface that comprises said wiring layer.
2. the method for claim 1,
Wherein, in the said step that said wiring layer is exposed, on said exposed surface, generate passivation layer,
In the said step that said wiring layer is exposed with carry out between the said step of said Cement Composite Treated by Plasma, said method is further comprising the steps of: remove said passivation layer.
3. according to claim 1 or claim 2 method,
Wherein, said nitrogenous gas comprises at least a in nitrogen, ammonia and the Nitrogen trifluoride, and
Said inert gas comprises at least a in argon gas, xenon, helium and the neon.
4. according to claim 1 or claim 2 method,
Wherein, said wiring layer comprises electrode pad, and said electrode pad has the connection surface that is used to be electrically connected, and said connection surface is said exposed surface.
5. according to claim 1 or claim 2 method, it also comprises:
After carrying out said Cement Composite Treated by Plasma, carry out scribing and handle, so that said semiconductor substrate is cut and separate into a plurality of chips.
6. the method for claim 1, wherein in said Cement Composite Treated by Plasma, handle atmosphere pressures and be 0.1 to 2Pa, handling atmosphere temperature is-30 to 50 ℃, and the bias power that applies is 0 to 2000W.
7. the manufacturing approach of a semiconductor device said method comprising the steps of:
Carry out predetermined process, on a face side of semiconductor substrate, to generate contact site, in said contact site, two or more metals with various criterion electrode potential contact with each other; And
Carry out Cement Composite Treated by Plasma, so that plasma that is produced by the mist of nitrogenous gas and inert gas or the plasma that is produced by nitrogenous gas shine the scope that comprises said contact site.
8. semiconductor device comprises:
Semiconductor substrate;
Be positioned at the wiring layer on the face side of said semiconductor substrate, it is to be formed by alloy, and said alloy comprises two or more metals with various criterion electrode potential; And
Nitration case, it is formed on through the plasma that in Cement Composite Treated by Plasma, produced by the mist of nitrogenous gas and inert gas or by the said wiring layer of plasma irradiating that nitrogenous gas produces on the top layer on the surface that receives said plasma irradiating of said wiring layer.
9. semiconductor device as claimed in claim 8,
Wherein, said nitration case is formed on the top layer of the metal section and part with higher standard electrode potential in the said two or more metal;
Said semiconductor device also comprises passivation layer, forms when said passivation layer is passivated on the said top layer of said wiring layer.
10. semiconductor device as claimed in claim 8, wherein,
Said nitrogenous gas comprises at least a in nitrogen, ammonia and the Nitrogen trifluoride, and
Said inert gas comprises at least a in argon gas, xenon, helium and the neon.
11. semiconductor device as claimed in claim 8, wherein, said semiconductor substrate is cut and separates into a plurality of chips through the scribing processing after said plasma treatment.
12. semiconductor device as claimed in claim 8 wherein, in said plasma treatment, is handled atmosphere pressures and be 0.1 to 2Pa, handling atmosphere temperature is-30 to 50 ℃, and the bias power that applies is 0 to 2000W.
13. an electronic installation, it comprises:
The described semiconductor device of arbitrary claim among the aforementioned claim 8-12; And
Drive division, its generation is used to drive the drive signal of said semiconductor device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011036638A JP5909852B2 (en) | 2011-02-23 | 2011-02-23 | Manufacturing method of semiconductor device |
| JP2011-036638 | 2011-02-23 |
Publications (2)
| Publication Number | Publication Date |
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| CN102651373A true CN102651373A (en) | 2012-08-29 |
| CN102651373B CN102651373B (en) | 2016-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210026687.7A Active CN102651373B (en) | 2011-02-23 | 2012-02-07 | The manufacture method of semiconductor device, semiconductor device and electronic installation |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8786089B2 (en) |
| JP (1) | JP5909852B2 (en) |
| CN (1) | CN102651373B (en) |
| TW (1) | TWI503960B (en) |
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| CN103915400A (en) * | 2013-01-07 | 2014-07-09 | 矽品精密工业股份有限公司 | Semiconductor package and fabrication method thereof |
| CN105097564A (en) * | 2014-05-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Processing method of chip packaging structure |
| CN108573947A (en) * | 2017-03-07 | 2018-09-25 | 精工半导体有限公司 | Semiconductor device and its manufacturing method |
| CN114535219A (en) * | 2022-01-19 | 2022-05-27 | 昆山丘钛微电子科技股份有限公司 | Anti-corrosion method and system for welding part of camera module |
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| US8779577B2 (en) | 2012-02-13 | 2014-07-15 | Infineon Technologies Ag | Semiconductor chip comprising a plurality of contact pads and a plurality of associated pad cells |
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| JP6300533B2 (en) * | 2014-01-15 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | Semiconductor device manufacturing method and semiconductor device |
| CN104835748B (en) * | 2014-02-08 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | A method of improving semiconductor devices bonding reliability |
| US9614045B2 (en) * | 2014-09-17 | 2017-04-04 | Infineon Technologies Ag | Method of processing a semiconductor device and chip package |
| KR20180098009A (en) | 2017-02-24 | 2018-09-03 | 삼성전자주식회사 | Printed Circuit Board, and semiconductor package having the same |
| US11315828B2 (en) * | 2018-08-15 | 2022-04-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal oxide composite as etch stop layer |
| US10985116B2 (en) * | 2019-03-14 | 2021-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and method of forming the same |
| JP7237785B2 (en) * | 2019-09-20 | 2023-03-13 | 株式会社東芝 | Semiconductor device manufacturing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| US9099534B2 (en) | 2015-08-04 |
| CN102651373B (en) | 2016-08-24 |
| TWI503960B (en) | 2015-10-11 |
| US20140329353A1 (en) | 2014-11-06 |
| JP5909852B2 (en) | 2016-04-27 |
| US20120211879A1 (en) | 2012-08-23 |
| TW201236144A (en) | 2012-09-01 |
| US8786089B2 (en) | 2014-07-22 |
| JP2012174951A (en) | 2012-09-10 |
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