CN102646755A - Production process for polycrystalline silicon thin-film battery piece - Google Patents
Production process for polycrystalline silicon thin-film battery piece Download PDFInfo
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- CN102646755A CN102646755A CN2012101195718A CN201210119571A CN102646755A CN 102646755 A CN102646755 A CN 102646755A CN 2012101195718 A CN2012101195718 A CN 2012101195718A CN 201210119571 A CN201210119571 A CN 201210119571A CN 102646755 A CN102646755 A CN 102646755A
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- polycrystalline silicon
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Abstract
A production process for a polycrystalline silicon thin-film battery piece comprises the following steps that: 1) a graphite substrate is produced; 2) purified polycrystalline silicon is placed into a graphite crucible and is heated till the purified polycrystalline silicon is completed melted; 3) the bottom surface of the graphite substrate skims over the melted polycrystalline silicon and moves away quickly; 4) the bottom surface of the graphite substrate is placed upwards, and the melted polycrystalline silicon on the graphite substrate is cooled till the polycrystalline silicon is completed solidified, so as to form a polycrystalline silicon thin-film battery panel; 5) the polycrystalline silicon thin-film battery panel is taken down from the graphite substrate; and 6) the polycrystalline silicon thin-film battery panel is cut to form the polycrystalline silicon thin-film battery piece. The production process has the advantages that used equipment is simple and is low in production cost, low in failure rate and easy in maintenance, the operation in the whole production process is simple, workers can operate without the professional training, the piece output rate of 1kg of silicon materials is high, the production cost is low, the production efficiency is high, the production environment is good, polishing is not required, and the photoelectricity conversion efficiency of the product is high.
Description
Technical field
The present invention relates to a kind of production technology of polysilicon chip hull cell sheet.
Background technology
Polycrystalline silicon thin film solar cell is a kind of save silicon material, the simple solar cell of manufacturing process, and the polycrystalline silicon thin film solar cell sheet is the main part of polycrystalline silicon thin film solar cell sheet.Prepare at present the method that the polycrystalline silicon thin film solar cell sheet usually adopts the multi-line cutting machine section, promptly, carry abrasive particles by steel wire again silicon ingot is cut into thin slice through motor pulling steel wire.1), adopt silicon ingot as raw material there is following shortcoming in this method:, because the silicon ingot casting forms, its density is bigger, can have a strong impact on the efficient that photoelectricity transforms, and its electricity conversion only has 16%.2), multi-line cutting machine costs an arm and a leg complicated operation, and failure rate height, not easy care.3), adopt multi-line cutting machine to carry out sectioning, length consuming time when cutting, need a large amount of cutting fluids, and a large amount of silicon material becomes smear metal, raw-material serious waste phenomenon after cutting.4), dust from flying in the cutting process, noise is big, operating environment is poor, is unfavorable for that the workman's is healthy.5), the polycrystalline silicon thin film solar cell sheet rough surface after the cutting, need to carry out polishing to the polycrystalline silicon thin film solar cell sheet.
Summary of the invention
The technical problem that the present invention will solve provides that a kind of production equipment is cheap, simple to operate, failure rate is low, easy care; Economize in raw materials during production, the production time is short; Operating environment is good, need not polishing, the production technology of the polycrystalline silicon thin film solar cell sheet that electricity conversion is high.
The present invention is achieved in that
A kind of production technology of polycrystalline silicon thin film solar cell sheet, its special character are that concrete steps are following:
1), makes graphite substrate;
2), the polysilicon after will purifying drops into graphite crucible, is heated to fusing fully;
3), make the bottom surface of graphite substrate skim over the polysilicon of fusion, and hightail;
4), the bottom surface of graphite substrate is placed up, the polysilicon of fusion on the cooling graphite substrate solidifies fully until polysilicon and to form the polycrystalline silicon thin film solar cell plate;
5), with the polycrystalline silicon thin film solar cell plate by taking off on the graphite substrate;
6), the cutting of polycrystalline silicon thin film solar cell plate is formed the polycrystalline silicon thin film solar cell sheet.
Said graphite substrate is that cuboid and bottom surface are provided with a plurality of grooves, with the adhesive ability of the polysilicon that increases fusion.
The degree of depth of said groove is 30 μ m～60 μ m, and the distance between per two adjacent grooves equates and is 2～4mm, is evenly distributed in the bottom surface of graphite substrate with the polysilicon that guarantees fusion.
Described groove arranges along horizontal, longitudinal direction,
Distance between said two adjacent grooves is 3mm.
The purity of the polysilicon after the said purification is 6N～8N.
By the mechanical arm clamping, the movement velocity of mechanical arm was 0.8m/min～1.8m/min when said graphite substrate skimmed over the polysilicon of fusion.
Adopt the mode of laser cutting to cut the polycrystalline silicon thin film solar cell plate to obtain the polycrystalline silicon thin film solar cell sheet.
The invention has the beneficial effects as follows:
1), producing the polycrystalline silicon thin film solar cell sheet only need use crucible with the polysilicon fusion; Utilize the graphite substrate that skims over the fusion polysilicon surface to pick the polysilicon of fusion again; Its equipment that uses is simple, cheap, failure rate is low, easy maintenance; Whole process of production is simple to operate, and the workman need not can operation on duty through the training of specialty.
2), need not to carry out multi-thread cutting; Avoided the silicon material to become smear metal and be wasted; Adopt the mode of multi-thread cutting, the per kilogram polysilicon can make 35 of polycrystalline silicon thin film solar cell sheets, and adopts technology of the present invention; The per kilogram polysilicon can make 56 of polycrystalline silicon thin film solar cell sheets, and the slice efficient of per kilogram silicon material is high; Simultaneously, need not in operating process, to add cooling fluid, reduced production cost.
3), production process is simple, shortened the production time greatly, improved production efficiency.
4), avoided producing dust and noise aborning, improved production environment, that avoids the workman healthyly crosses difference because of production environment and is compromised.
5), through the cooling after coagulation the polycrystalline silicon thin film solar cell plate, its smooth surface, need not the polishing.
6), the polysilicon that uses fusion is as the raw material of producing the polycrystalline silicon thin film solar cell sheet, compares with the silicon ingot that casting forms, its density is little, helps photoelectricity and transforms, its electricity conversion can reach 18.4 above %.
Description of drawings
Fig. 1 is a working state schematic representation of the present invention;
Fig. 2 is the structural representation of graphite substrate among this Fig. 1.
Among the figure: graphite substrate 1, groove 101, two-dimentional machinery arm 2, the polysilicon 3 of fusion, the polysilicon 4 of fusion on the graphite substrate.
Embodiment
The production technology of this polycrystalline silicon thin film solar cell sheet, concrete steps are following:
1), makes graphite substrate 1; Described graphite substrate 1 is a cuboid; Its length is respectively 315mm, 315mm, 50mm; Be provided with a plurality of grooves 101 in the bottom surface of graphite substrate 1 and be uniformly distributed with along horizontal, longitudinal direction, the degree of depth of said groove 101 is 30 μ m, and the distance between per two adjacent grooves 101 is 2mm.
2), the back purity of will purifying is that the polysilicon of 6N drops into graphite crucible, with adjustment to 1450 ℃, polysilicon is heated to fusing fully.
3), utilize two-dimentional machinery arm 2 clamping graphite substrates 1; The movement locus of two-dimentional machinery arm 2 is set; Make the bottom surface of graphite substrate 1 skim over the polysilicon 3 of fusion; The movement velocity of two-dimentional machinery arm 2 is 0.8m/min, when the bottom surface of graphite substrate 1 with after the polysilicon 3 of fusion contacts fully, hightail the polysilicon 3 of fusion.
4), with graphite substrate 1 by taking off on the two-dimentional machinery arm 2, and the bottom surface places up, the polysilicon of fusion on the natural cooling graphite substrate 14 two minutes solidifies the polysilicon 4 of fusion on the graphite substrate 1 fully and forms the polycrystalline silicon thin film solar cell plate.
5), with the polycrystalline silicon thin film solar cell plate by taking off on the graphite substrate 1.
6), adopt the mode of laser cutting that the cutting of polycrystalline silicon thin film solar cell plate is formed 4 polycrystalline silicon thin film solar cell sheets, the specification of described polycrystalline silicon thin film solar cell sheet is 156mm * 156mm, its thickness is 225 μ m, electricity conversion is 18.4%.
Embodiment 2
The production technology of this polycrystalline silicon thin film solar cell sheet, concrete steps are following:
1), makes graphite substrate 1; Described graphite substrate 1 is a cuboid; Its length is respectively 472mm, 315mm, 120mm; Be provided with a plurality of grooves 101 in the bottom surface of graphite substrate 1 and be uniformly distributed with along horizontal, longitudinal direction, the degree of depth of said groove 101 is 45 μ m, and the distance between per two adjacent grooves 101 is 3mm.
2), the back purity of will purifying is that the polysilicon of 7N drops into graphite crucible, with adjustment to 1475 ℃, polysilicon is heated to fusing fully.
3), utilize two-dimentional machinery arm 2 clamping graphite substrates 1; The movement locus of two-dimentional machinery arm 2 is set; Make the bottom surface of graphite substrate 1 skim over the polysilicon 3 of fusion; The movement velocity of two-dimentional machinery arm 2 is 1.4m/min, when the bottom surface of graphite substrate 1 with after the polysilicon 3 of fusion contacts fully, hightail the polysilicon 3 of fusion.
4), with graphite substrate 1 by taking off on the two-dimentional machinery arm 2, and the bottom surface places up, the polysilicon of fusion on the natural cooling graphite substrate 14 three minutes solidifies fully to polysilicon and forms the polycrystalline silicon thin film solar cell plate.
5), with the polycrystalline silicon thin film solar cell plate by taking off on the graphite substrate 1.
6), adopt the mode of laser cutting that the cutting of polycrystalline silicon thin film solar cell plate is formed 6 polycrystalline silicon thin film solar cell sheets, the specification of described polycrystalline silicon thin film solar cell sheet is 156mm * 156mm, its thickness is 220 μ m, electricity conversion is 18.6%.
The production technology of this polycrystalline silicon thin film solar cell sheet, concrete steps are following:
1), makes graphite substrate 1; Described graphite substrate 1 is a cuboid; Its length is respectively 472mm, 472mm, 50mm; Be provided with groove 101 in the bottom surface of graphite substrate 1 and be uniformly distributed with along horizontal, longitudinal direction, the degree of depth of said groove 101 is 60 μ m, and the distance between per two adjacent grooves 101 is 4mm.
2), the back purity of will purifying is that the polysilicon of 8N drops into graphite crucible, with adjustment to 1500 ℃, polysilicon is heated to fusing fully.
3), utilize two-dimentional machinery arm 2 clamping graphite substrates 1; The movement locus of two-dimentional machinery arm 2 is set; Make the bottom surface of graphite substrate 1 skim over the polysilicon 3 of fusion; The speed of two-dimentional machinery arm is 1.8m/min, when the bottom surface of graphite substrate 1 with after the polysilicon 3 of fusion contacts fully, hightail the polysilicon 3 of fusion.
4), with graphite substrate 1 by taking off on the two-dimentional machinery arm 2, and the bottom surface places up, the polysilicon of fusion on the natural cooling graphite substrate 14 four minutes solidifies fully to polysilicon and to form the polycrystalline silicon thin film solar cell plate.
5), with the polycrystalline silicon thin film solar cell plate by taking off on the graphite substrate 1.
6), adopt the mode of laser cutting that the cutting of polycrystalline silicon thin film solar cell plate is formed 9 polycrystalline silicon thin film solar cell sheets, the specification of described polycrystalline silicon thin film solar cell sheet is 156mm * 156mm, its thickness is 216 μ m, electricity conversion is 18.5%.
Claims (8)
1. the production technology of a polycrystalline silicon thin film solar cell sheet is characterized in that:
1), makes graphite substrate;
2), the polysilicon after will purifying drops into graphite crucible, is heated to fusing fully;
3), make the bottom surface of graphite substrate skim over the polysilicon of fusion, and hightail;
4), the bottom surface of graphite substrate is placed up, solidify fully until polysilicon on the cooling graphite substrate and form the polycrystalline silicon thin film solar cell plate;
5), with the polycrystalline silicon thin film solar cell plate by taking off on the graphite substrate;
6), the cutting of polycrystalline silicon thin film solar cell plate is formed the polycrystalline silicon thin film solar cell sheet.
2. the production technology of polycrystalline silicon thin film solar cell sheet according to claim 1 is characterized in that: said graphite substrate is that cuboid and bottom surface are provided with a plurality of grooves.
3. the production technology of polycrystalline silicon thin film solar cell sheet according to claim 2 is characterized in that: the degree of depth of said groove is 30 μ m～60 μ m, and the distance between per two adjacent grooves equates and is 2～4mm.
4. according to the production technology of claim 2 or 3 described polycrystalline silicon thin film solar cell sheets, it is characterized in that: described groove is arranged along horizontal, longitudinal direction.
5. according to the production technology of claim 2 or 3 described polycrystalline silicon thin film solar cell sheets, it is characterized in that: the distance between said two adjacent grooves is 3mm.
6. the production technology of polycrystalline silicon thin film solar cell sheet according to claim 1 is characterized in that: the purity of the polysilicon of said input is 6N～8N.
7. the production technology of polycrystalline silicon thin film solar cell sheet according to claim 1 is characterized in that: by the mechanical arm clamping, the movement velocity of mechanical arm was 0.8m/min～1.8m/min when said graphite substrate skimmed over the polysilicon of fusion.
8. the production technology of polycrystalline silicon thin film solar cell sheet according to claim 1 is characterized in that: adopt the mode of laser cutting to cut the polycrystalline silicon thin film solar cell plate.
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| CN2012101195718A CN102646755A (en) | 2012-04-23 | 2012-04-23 | Production process for polycrystalline silicon thin-film battery piece |
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| CN2012101195718A CN102646755A (en) | 2012-04-23 | 2012-04-23 | Production process for polycrystalline silicon thin-film battery piece |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110446558A (en) * | 2017-03-29 | 2019-11-12 | 住友重机械工业株式会社 | Membrane formation device and film forming method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1113096A1 (en) * | 1999-12-27 | 2001-07-04 | Sharp Kabushiki Kaisha | Method of producing a crystal sheet, apparatus for use in producing the same, and solar cell |
| CN1920120A (en) * | 2002-06-28 | 2007-02-28 | 夏普株式会社 | Thin sheet production method and thin sheet production device |
| CN102037546A (en) * | 2008-02-29 | 2011-04-27 | 康宁股份有限公司 | Methods of making an unsupported article of pure or doped semiconducting material |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1113096A1 (en) * | 1999-12-27 | 2001-07-04 | Sharp Kabushiki Kaisha | Method of producing a crystal sheet, apparatus for use in producing the same, and solar cell |
| CN1920120A (en) * | 2002-06-28 | 2007-02-28 | 夏普株式会社 | Thin sheet production method and thin sheet production device |
| CN102037546A (en) * | 2008-02-29 | 2011-04-27 | 康宁股份有限公司 | Methods of making an unsupported article of pure or doped semiconducting material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110446558A (en) * | 2017-03-29 | 2019-11-12 | 住友重机械工业株式会社 | Membrane formation device and film forming method |
| CN110446558B (en) * | 2017-03-29 | 2021-11-09 | 住友重机械工业株式会社 | Film forming apparatus and film forming method |
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Application publication date: 20120822 |