CN202283752U - Linear cutting steel wire of solar silicon chip - Google Patents
Linear cutting steel wire of solar silicon chip Download PDFInfo
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- CN202283752U CN202283752U CN2011203713248U CN201120371324U CN202283752U CN 202283752 U CN202283752 U CN 202283752U CN 2011203713248 U CN2011203713248 U CN 2011203713248U CN 201120371324 U CN201120371324 U CN 201120371324U CN 202283752 U CN202283752 U CN 202283752U
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Abstract
The utility model relates to a linear cutting steel wire of a solar silicon chip, comprising a metal line and solid particles combined to the outer surface of the metal line. The solid particles are combined to the outer surface of the metal line through amorphous alloy. The linear cutting steel wire of a solar silicon chip is advantageous in that the steel wire can meet the special demand of intensity and wear resistance on wire rods used by a scroll saw; cutting efficiency of a solar silicon chip can be improved; cost can be reduced.
Description
Technical field
The utility model relates to a kind of solar silicon wafers line cutting steel wire.
Background technology
Photovoltaic generation industry development in recent years is swift and violent, and silicon chip is a substrate of making photovoltaic cell, and scroll saw is cut into very thin silicon chip then at first with the silicon ingot dice.Silicon chip is a part the most expensive in the crystal silicon photovoltaic cell technology, so it is most important to the competitiveness of traditional energy for improving solar energy to reduce the manufacturing cost of this part.
Scroll saw is the ultra-fine high strength line of cut that under the cooperation of ground slurry, is used to accomplish cutting action, can reach 1000 lines of cut at most and be wrapped in the line of cut " net " that forms a level on the guide roller in parallel to each other.Motor driving lead wheel makes whole cutting gauze move with the speed of per second 5-25 rice.In the line of cut motion process, nozzle can continue to spray the slurry that contains the suspended carbon silicon carbide particle to line of cut.Silicon-carbide particle is coated on the line of cut surface in the high-speed motion equably, utilizes the rigid characteristic of self, sharp water caltrop and line of cut acting in conjunction that silicon rod is progressively blocked.
Line of cut but the silicon-carbide particle in the slurry is easy to wear and tear in the high-speed motion changes line of cut line footpath, thus influence cutting quality.If use instead the Buddha's warrior attendant line cut into slices need to current wire cutting machine carry out structure of modification, the diamond particle diameter discreteness that is fixed on the steel wire surface simultaneously causes silicon chip surface to have irregular stria to influence the large tracts of land use greatly.
Along with the development of whole solar energy industry, solar power silicon sheet cutting equipment input is in recent years with tens times the operation that increases, wherein cutting with steel wire with the section board expand production and about 50,000 tons of lot of consumption, year consumption steel wire rod.A large amount of lines that use are cut steel wire in the cutting of solar silicon wafers line; Be unfavorable for environment control and cause the increase of entreprise cost; In order to adapt to the competition development need of future market demand and price, whole industry all for how improving steel wire surface abrasion resistance property and use amount and cutting efficiency and reduction cutting cost and don't change is having cutting equipment and technology now, is ceaselessly seeking new approach.
The utility model content
The utility model to solve existing solar silicon wafers line cutting steel wire intensity low, wear no resistance the technical problem of easy abrasion.The utility model provides a kind of solar silicon wafers cutting steel wire that contains solia particle amorphous alloy composite construction for this reason, satisfies scroll saw with the specific (special) requirements of wire rod to intensity, wearability, improves the cutting efficiency of silicon chip, reduces cost.
The technical scheme that the utility model provides is, a kind of solar silicon wafers line cutting steel wire comprises metal wire and is combined in the solia particle of metal wire outer surface, and solia particle is that the amorphous alloy through fusion is combined in the metal wire outer surface.Amorphous alloy is called glassy metal again, has that long-range is unordered, the metastable state architectural feature of shortrange order.The three dimensions of its atom is the topological disorder arrangement when solid-state, and this state keeps relative stability in certain temperature range.Compare with traditional crystal alloy, non-crystaline amorphous metal possesses the performance of a lot of excellences, like high strength, high rigidity, wear-resisting and corrosion-resistant etc.Compare with common wire, scroll saw intensity, wearability that the wire rod of the utility model is made obviously improve.
Solia particle presents solid state under the amorphous alloy high temperature fused state, hardness is very high, can further improve the wearability of amorphous coating; And equally distributed solia particle can play with ground slurry in the identical effect of silicon-carbide particle, promptly when high-speed motion, silicon rod is progressively blocked, thereby reduces the use of ground slurry, reduce the wearing and tearing of slurry when practicing thrift cost to line of cut.
As preferably, wire diameter is 90-300um.
As preferably, solia particle is a carborundum.
As preferably, solia particle is a diamond.
As preferably, the particle diameter of solia particle is 2～20um.The particle diameter that reduces solia particle helps the even distribution of solia particle in amorphous alloy, causes silicon chip surface that irregular stria is arranged greatly thereby reduce the particle diameter discreteness.But particle diameter too hour solia particle just weakens the dissection of silicon rod.
As preferably, the solia particle particle diameter is 2～3um.The solar silicon wafers cutting steel wire of amorphous alloy composite construction that contains the solia particle of this particle size range can strengthen the intensity and the wearability of amorphous coating, but not obvious to the dissection of silicon chip, needs to cooperate ground slurry to use.
As preferably, the particle diameter of solia particle is 10～20um.The solia particle of this particle size range is equivalent on amorphous coating, form an incised layer, makes steel wire possess high strength simultaneously, wearability is good, and is obvious to the dissection of silicon chip, can not use ground slurry.
Because scroll saw is ultra-fine with gauge or diameter of wire; The solar energy cutting steel wire wire diameter that the utility model provides is 90-300um; And the amorphous alloy temperature of fusion is generally at 600～1000 ℃; Ultra-fine steel wire is easy to when being in contact with it because high temperature causes performance variation, thereby it is very big with difficulty on the ultra-fine wire rod before the utility model application, amorphous alloy to be applied to scroll saw.The utility model can obtain this special amorphous metal silk through special processing technology, and concrete processing method is:
1), contains the amorphous alloy preparation of solia particle
One or more amorphous alloys and solia particle are placed the electric arc furnaces melting under the inert gas atmosphere, require vacuum less than 2 * 10
-3Pa, melting electric current are 350～550A, process foundry alloy under the copper mold casting condition;
2) it is compound, to contain the amorphous alloy and the metal wire of solia particle
The foundry alloy for preparing is packed in the quartzy stove of high-frequency heating into heating and melting foundry alloy and insulation; Metal wire is quick through the quartzy stove extrusion of molten condition amorphous alloy is housed; The speed of passing through is 1～1000mm/ second; Make the metal wire outer surface be covered with one deck alloy liquid equably; Quick cooling makes the metal wire outer surface be covered with one deck solia particle equably through alloy liquid behind the quartzy stove, and solia particle is combined in the metal wire outer surface through amorphous alloy, thereby obtains the cutting wire rod by the solia particle modification.
Because 2), in amorphous alloy and the metal wire recombination process; The speed of the quartzy stove extrusion of metal wire through the molten condition amorphous alloy is housed has been controlled in strictness; Make in high-temperature fusion amorphous alloy and the metal wire recombination process; Metal wire self temperature is effectively controlled, and does not influence the mechanical performance of metal wire.
For adapting to the needs of different cutting materials, further improve intensity, wearability and decay resistance and the service life of cutting wire rod, described non-crystaline amorphous metal has more than three kinds, and its step of preparation process is following:
1), contains the amorphous alloy preparation of solia particle
Two or more different metal base amorphous alloy of high-melting-point and a part of solia particle are placed the electric arc furnaces melting under the inert gas atmosphere that the molten Ti purifying crosses in proportion, and adopt electromagnetic agitation, require vacuum less than 2 * 10
-3Pa, melting electric current are 350～550A, and melting is to guarantee to obtain the uniform intermediate alloy of composition; Second step was put into crucible in proportion with intermediate alloy and other Metal Substrate amorphous alloys and remaining solia particle, and crucible is placed vacuum drying oven, and vacuum is evacuated to 1 * 10
-2Below the Pa, pour inert gas as protective gas, the pressure of inert gas is 0.3～0.7 atmospheric pressure, melting under 600～1100 ℃ of conditions of temperature, and then process foundry alloy under the copper mold casting condition;
2) it is compound, to contain the amorphous alloy and the metal wire of solia particle
The foundry alloy for preparing is packed in the quartzy stove of high-frequency heating into heating and melting foundry alloy and insulation; Metal wire is quick through the quartzy stove extrusion of molten condition foundry alloy is housed under the traction of take-up reel; The speed of passing through is 1～1000mm/ second; Let the metal wire outer surface be covered with one deck alloy liquid equably; Quick cooling makes the metal wire outer surface be covered with one deck solia particle equably through alloy liquid behind the quartzy stove, and solia particle is combined in the metal wire outer surface through amorphous alloy, thereby obtains the wire rod by the solia particle modification.
Because 1) in smelting amorphous in two steps attitude alloy, guaranteed that alloy compositions is even, thus guarantee layer on surface of metal amorphous alloy composition of layer evenly, guarantee the cutting surface quality.
As preferably, metal wire is 500-800mm/ second through the speed of quartzy stove extrusion that the molten condition foundry alloy is housed.
The beneficial effect of the utility model is, the every cutter use amount of solar silicon wafers line cutting steel wire that the utility model provides reduces more than 30%, and when using 10～20um solia particle, every cutter use amount more can reduce to more than 90%, and can be without slurry.The intensity and the wearability that show steel wire are greatly improved, and have improved the service life of steel wire greatly, have improved the cutting efficiency of silicon chip, reduce cost.
Description of drawings
The structural representation of the solar silicon wafers line cutting steel wire of Fig. 1: the utility model embodiment 1,3.
1 expression metal level among Fig. 1,2 expression amorphous coating, 3 expression solia particles
The structural representation of the solar silicon wafers line cutting steel wire of Fig. 2: the utility model embodiment 2.
1 expression metal level among Fig. 2,2 expression amorphous coating, 3 expression solia particles
The specific embodiment
The solar silicon wafers line cutting steel wire of the utility model as shown in Figure 1, gauge or diameter of wire is 0.09mm, it comprises metal wire and is coated on metal wire outer surface silicon-carbide particles that particulate is combined in the metal wire outer surface through amorphous coating.The thickness of its amorphous coating is 2 microns, and metal wire is the preparatory modification wire rod of steel wire.
The preparation method of aforementioned solar silicon wafers line cutting steel wire:
One. silicon carbide-containing particulate amorphous master alloy material composition is than (weight portion)
Two. wear-resisting foundry alloy material manufacture craft
With 5.5 parts of high-melting-point magnesium-base amorphous alloys, 9.0 parts and 20 parts silicon-carbide particles of cu-base amorphous alloy attitude alloy, place the electric arc furnaces melting under the inert gas atmosphere that the molten Ti purifying crosses, and adopt electromagnetic agitation, require vacuum less than 2 * 10
-3Pa, melting electric current are 550A, and melting is to guarantee to obtain the uniform intermediate alloy of composition; Second step was put into crucible with intermediate alloy and 45.5 parts and 20 parts silicon-carbide particles of nickel base amorphous alloy, and crucible is placed vacuum drying oven, and vacuum is evacuated to 1 * 10
-2Below the Pa, pour inert gas as protective gas, the pressure of inert gas is 0.7 atmospheric pressure, melting under 600 ℃ of conditions of temperature, and then process 100 parts of foundry alloys under the copper mold casting condition.
Three. silicon carbide-containing particulate amorphous alloy and steel wire coating processes
The foundry alloy for preparing is packed in the quartzy stove of high-frequency heating into heating and melting foundry alloy and insulation; The steel wire that oneself stretches is quick through the quartzy stove extrusion of molten condition foundry alloy is housed under the traction of take-up reel; The speed of passing through is V=800mm/ second; Let Steel Wire Surface evenly apply last layer alloy liquid; Through quick cooling behind the quartzy stove steel wire surface evenly is coated with and has been covered with one deck solia particle, solia particle is combined in the metal wire outer surface through amorphous alloy, thereby has obtained a kind of cutting wire rod by the modification of carborundum solia particle.
The amorphous alloy composite bed of instance one, silicon carbide-containing particulate is processed the controlled solar silicon wafers line cutting in line footpath do not changing under the existing MB271 slicer technology with wear-resisting steel wire, the every cutter use amount of steel wire reduces 30%--50%.
The solar silicon wafers line cutting steel wire of the utility model as shown in Figure 2, the steel wire diameter is 0.3mm, it comprises metal wire and is coated on the diamond particle of metal wire outer surface that particulate closes through amorphous state and is combined in the metal wire outer surface.The thickness of its amorphous coating is 10 microns, and metal wire is the preparatory modification wire rod of steel wire.
The preparation method of aforementioned solar silicon wafers line cutting steel wire:
One. contain diamond particle amorphous master alloy material composition than (weight portion)
65 parts of nickel base amorphous alloys
14 parts of magnesium-base amorphous alloys
Diamond particle (particle diameter D50 10um～20um) 21.0 parts
Two. contain diamond particle amorphous master alloy material manufacture craft
With 65 parts of nickel base amorphous alloys, 14 parts and 21 parts diamond particles of magnesium-base amorphous alloy, place the electric arc furnaces melting under the inert gas atmosphere that the molten Ti purifying crosses, and adopt electromagnetic agitation, require vacuum less than 2 * 10
-3Pa, melting electric current are 350A, melting under 1100 ℃ of conditions of temperature, and then process 100 parts of foundry alloys under the copper mold casting condition.
Three. contain diamond particle amorphous alloy and steel wire coating processes
The foundry alloy for preparing is packed in the quartzy stove of high-frequency heating into heating and melting foundry alloy and insulation; The steel wire that oneself stretches is quick through the quartzy stove extrusion of molten condition foundry alloy is housed under the traction of take-up reel; The speed of passing through is V=200mm/ second; Let Steel Wire Surface evenly apply last layer alloy liquid; Through quick cooling behind the quartzy stove steel wire surface evenly is coated with and has been covered with one deck solia particle, solia particle is combined in the metal wire outer surface through amorphous alloy, thereby has obtained a kind of cutting wire rod by the diamond particle modification.
Instance two, the amorphous alloy composite bed that contains diamond particle are processed the controlled solar silicon wafers line cutting in line footpath use wear-resisting steel wire; Because the diamond diameter of particle in the amorphous alloy is 10um～20um, particle diameter is thicker, therefore; There is hard diamond particles shape protruding at solar silicon wafers cutting steel wire outer surface; Therefore adopting should cutting steel wire cutting solar silicon wafers the time can be without slurry, and only adopts water-cooled get final product, and every cutter use amount minimizing 90%--95%.
Embodiment 3
The solar silicon wafers line cutting steel wire of the utility model as shown in Figure 1, gauge or diameter of wire is 0.12mm, carborundum and diamond particle that it comprises metal wire and is coated on the metal wire outer surface, particulate is combined in the metal wire outer surface through amorphous alloy.The thickness of its amorphous coating is 5 microns, and metal wire is the preparatory modification wire rod of steel wire.
The preparation method of aforementioned solar silicon wafers line cutting steel wire:
One. silicon carbide-containing/diamond particle amorphous master alloy material composition is than (weight portion)
Two. contain diamond particle amorphous master alloy material manufacture craft
With 20.5 parts of high-melting-point magnesium-base amorphous alloys, 8.0 parts and 5 parts diamond particles of cu-base amorphous alloy attitude alloy, place the electric arc furnaces melting under the inert gas atmosphere that the molten Ti purifying crosses, and adopt electromagnetic agitation, require vacuum less than 2 * 10
-3Pa, melting electric current are 450A, and melting is to guarantee to obtain the uniform intermediate alloy of composition; Second step was put into crucible with intermediate alloy and 50.5 parts and 16 parts silicon-carbide particles of nickel base amorphous alloy, and crucible is placed vacuum drying oven, and vacuum is evacuated to 1 * 10
-2Below the Pa, pour inert gas as protective gas, the pressure of inert gas is 0.3 atmospheric pressure, melting under 1100 ℃ of conditions of temperature, and then process 100 parts of foundry alloys under the copper mold casting condition.
Three. silicon carbide-containing/diamond particle amorphous alloy and steel wire coating processes
The foundry alloy for preparing is packed in the quartzy stove of high-frequency heating into heating and melting foundry alloy and insulation; The steel wire that oneself stretches is quick through the quartzy stove extrusion of molten condition foundry alloy is housed under the traction of take-up reel; The speed of passing through is V=500mm/ second; Let Steel Wire Surface evenly apply last layer alloy liquid; Through quick cooling behind the quartzy stove steel wire surface evenly is coated with and has been covered with one deck solia particle, solia particle is combined in the metal wire outer surface through amorphous alloy, thereby has obtained the cutting wire rod of a kind of carborundum, diamond particle modification.
Instance three, the amorphous alloy composite bed that contains diamond particle are processed the controlled solar silicon wafers line cutting in line footpath use wear-resisting steel wire; When line taking footpath 110um steel wire applies into wearing layer thickness 5um, can make the line footpath and cut steel wire for the line that 120um does not change existing slicer technology. every cutter use amount reduces 50%--65%.
Above-described specific embodiment; Purpose, technical scheme and beneficial effect to the utility model have carried out further explain, it should be understood that the above is merely the specific embodiment of the utility model; Be not limited to the utility model; All within the spirit and principle of the utility model, any modification of being made, be equal to replacement, improvement etc., all should be included within the protection domain of the utility model.
Claims (7)
1. solar silicon wafers line cutting steel wire is characterized in that: comprise metal wire and be combined in the solia particle of metal wire outer surface, solia particle is combined in the metal wire outer surface through amorphous alloy.
2. the described solar silicon wafers line of claim 1 cuts steel wire, and it is characterized in that: wire diameter is 90-300um.
3. the described solar silicon wafers line of claim 1 cuts steel wire, and it is characterized in that: described solia particle is a carborundum.
4. the described solar silicon wafers line of claim 1 cuts steel wire, and it is characterized in that: described solia particle is a diamond.
5. the described solar silicon wafers line of claim 1 cuts steel wire, and it is characterized in that: the particle diameter of described solia particle is 2-20um.
6. the described solar silicon wafers line of claim 1 cuts steel wire, and it is characterized in that: described solia particle particle diameter is 2-3um.
7. the described solar silicon wafers line of claim 1 cuts steel wire, and it is characterized in that: the particle diameter of described solia particle is 10-20um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203713248U CN202283752U (en) | 2011-06-03 | 2011-09-28 | Linear cutting steel wire of solar silicon chip |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120187146.3 | 2011-06-03 | ||
| CN201120187146 | 2011-06-03 | ||
| CN2011203713248U CN202283752U (en) | 2011-06-03 | 2011-09-28 | Linear cutting steel wire of solar silicon chip |
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| Publication Number | Publication Date |
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| CN202283752U true CN202283752U (en) | 2012-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011203713248U Expired - Fee Related CN202283752U (en) | 2011-06-03 | 2011-09-28 | Linear cutting steel wire of solar silicon chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103753720A (en) * | 2014-01-21 | 2014-04-30 | 开封恒锐新金刚石制品有限公司 | Method for manufacturing resin diamond line by non-plating diamond |
| CN107813433A (en) * | 2017-05-15 | 2018-03-20 | 开封大学 | A kind of special construction steel wire method for cutting silicon chips of NTC PV800H silicon chip cutters |
-
2011
- 2011-09-28 CN CN2011203713248U patent/CN202283752U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103753720A (en) * | 2014-01-21 | 2014-04-30 | 开封恒锐新金刚石制品有限公司 | Method for manufacturing resin diamond line by non-plating diamond |
| CN103753720B (en) * | 2014-01-21 | 2016-04-27 | 开封恒锐新金刚石制品有限公司 | By the method for non-plating diamond fabrication resin diamond wire |
| CN107813433A (en) * | 2017-05-15 | 2018-03-20 | 开封大学 | A kind of special construction steel wire method for cutting silicon chips of NTC PV800H silicon chip cutters |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120627 Termination date: 20180928 |
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| CF01 | Termination of patent right due to non-payment of annual fee |