CN207567379U - A kind of polysilicon fully-automatic production system - Google Patents
A kind of polysilicon fully-automatic production system Download PDFInfo
- Publication number
- CN207567379U CN207567379U CN201721533526.1U CN201721533526U CN207567379U CN 207567379 U CN207567379 U CN 207567379U CN 201721533526 U CN201721533526 U CN 201721533526U CN 207567379 U CN207567379 U CN 207567379U
- Authority
- CN
- China
- Prior art keywords
- silicon
- polysilicon
- ingot
- raw material
- processing unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model is related to a kind of polysilicon fully-automatic production systems,Processing unit including polycrystalline silicon raw material,The device includes raw material and detects screening machine,Raw material cleaning device and raw material drying device,Material transport track is equipped with after the processing unit of polycrystalline silicon raw material,The end of material transport track is connected on the ingot casting device of polysilicon,The ingot casting device of polysilicon includes crucible spraying device and vacuumizes/heating unit,Silicon ingot transmission rail is equipped with after the ingot casting device of polysilicon,The ingot casting device end of polysilicon leads to the cutting means of silicon ingot,The cutting means of the silicon ingot are followed successively by evolution device,Decaptitating tail apparatus,Flour milling,Facing attachment and glue sticking device and slicing device,The retracting device of waste material and the processing unit of silicon chip are equipped with after the cutting means of silicon ingot,Process is followed successively by degumming/washing/drying of silicon chip and the packaging of silicon chip before and after the processing unit of silicon chip,It is put in storage two parts.The utility model is structurally consummate, reasonable design, can meet needs of production.
Description
Technical field
The utility model belongs to the production and processing field of polysilicon, relates generally to a kind of polysilicon fully-automatic production system.
Technical background
Silicon materials are currently the most important semiconducting materials, and currently used solar cell is silion cell.Elemental silicon is ratio
A kind of more active nonmetalloid, it can form compound with 64 kinds of elements in 96 kinds of stable elements.The main application of silicon
It is to depend on its semiconduction.
Crystalline silicon includes monocrystalline silicon and polysilicon, and the preparation method of crystalline silicon, which is about first reduction with carbon SiO2, becomes Si,
It is purified again with HCl reactions and obtains higher purity polysilicon, polysilicon or amorphous silicon is typically first made in the preparation method of monocrystalline silicon, so
Bar-like single crystal silicon is grown from melt with vertical pulling method or floating zone method afterwards.The monocrystal of silicon.With substantially complete dot matrix
The crystal of structure.Polysilicon purity requirement for manufacturing solar cell reaches 99.9999%.It is first before crystalline silicon production and processing
It first needs to clean polysilicon.The purpose of cleaning is mainly the mechanical damage layer and the table to silicon chip for removing silicon chip surface
Face carries out male and fomale(M&F) (pyramid matte) and handles, and increases refraction number of the light on solar cell piece surface, conducive to solar cell
Absorption of the piece to light, to reach the peak use rate that cell piece is worth solar energy.In addition remove surface sodium metasilicate, oxide,
Greasy dirt and impurity metal ion.
Silicon material directional solidification after cleaning makes product.In general, silicon material includes virgin polycrystalline silicon material and monocrystalline silicon returns
Materials, the commonly referred to as positive material of virgin polycrystalline silicon, purity is higher, and price is also high;Monocrystalline silicon returns such as silicon single crystal rod is end to end
Raw material that material, edge skin material, pot bottom material, cell piece obtain after cleaning treatment etc..By silicon material in single crystal growing furnace (in solar level
It is more typical with Czochralski furnace in the production technology of monocrystalline silicon) in melt after using series of processes can grow into monocrystalline silicon ear of maize,
Monocrystalline silicon ear of maize is subsequently machined, obtains monocrystal silicon, slicing machines is reused and slice processing is carried out to silicon ingot, then
To silicon chip.
Making is the polycrystalline block or monocrystalline for selecting resistivity as 100~300 ohmcms to the technical process of crystal silicon
Silicon is expected end to end, through broken, with 1:5 hydrofluoric acid and nitric acid mixed liquor carries out appropriate corrosion, is then in deionized water flushing
Neutrality, and dry.Polycrystalline silicon material is installed with silica crucible, appropriate borosilicate is added in, is put into casting furnace, is heated in vacuum state molten
Change.About 20 minutes should be kept the temperature after fusing, is then injected into graphite casting die, to get polycrystal silicon ingot after cooling is slowly solidified.It is this
Silicon ingot is castable into cube, so as to slice processing squarely solar cell piece, can improve material utilization rate and ease of assembly.Polycrystalline
The manufacture craft of silicon solar cell and single crystal silicon solar cell are similar, photoelectric conversion efficiency about 12% or so, slightly less than singly
Crystal silicon solar battery, but material manufacture is easy, saves power consumption, total production cost is relatively low, therefore is largely developed.With
Technology must improve, and the transfer efficiency of polysilicon can also reach 14% or so at present.
Invention content
In order to meet the needs of actual production, the utility model provides a kind of polysilicon fully-automatic production system, and structure is complete
Kind and reasonable design.
Designing scheme is used by the utility model:A kind of polysilicon fully-automatic production system, including polycrystalline silicon raw material
Processing unit 1, the processing unit 1 of the polycrystalline silicon raw material includes raw material detection screening machine 2 and raw material cleaning device 3 and original
Expect drying device 4, material transport track 5, the material transport track 5 are equipped with after the processing unit 1 of the polycrystalline silicon raw material
End be connected on the ingot casting device 6 of polysilicon, the ingot casting device 6 of the polysilicon includes crucible spraying device 7 and takes out true
Sky/heating unit 8, the ingot casting device 6 of the polysilicon are equipped with silicon ingot transmission rail 9, the ingot casting device 6 of the polysilicon later
End leads to the cutting means 10 of silicon ingot, and the cutting means 10 of the silicon ingot are followed successively by evolution device 11, decaptitating tail apparatus 12, mill
Face, facing attachment 13 and glue sticking device 14 and slicing device 15, the cutting means 10 of the silicon ingot are equipped with returning for waste material later
The processing unit of receiving apparatus 19 and silicon chip (16), process is followed successively by the degumming of silicon chip/clear before and after the processing unit 16 of the silicon chip
Wash/dry packaging, 18 two parts of storage of 17 and silicon chip.
In designing scheme provided by the utility model, the material transport track 5 is located at the processing unit 1 of polycrystalline silicon raw material
It is connected between the ingot casting device 6 of polysilicon, and by two-part device.
In designing scheme provided by the utility model, the silicon ingot transmission rail 9 is located at the ingot casting device 6 and silicon of polysilicon
Between the cutting means 10 of ingot.
In designing scheme provided by the utility model, the evolution device 11, decaptitating tail apparatus 12, flour milling, facing attachment
13rd, glue sticking device 14 and slicing device 15 are integrally formed the cutting means 10 of silicon ingot for a silicon ingot processing of cutting.
In designing scheme provided by the utility model, the processing unit 1 of the polycrystalline silicon raw material, ingot casting device 6, the silicon of silicon
The cutting means 10 of ingot, the processing unit 16 of silicon chip, the packaging of silicon chip, storage 18 and waste material retracting device 19 be a flowing water
Linear system is united.
The utility model has the following advantages:
The utility model is structurally consummate, provides a kind of polysilicon fully-automatic production system, designs from polycrystalline silicon raw material to more
Whole processing procedures of crystal silicon waste material, reasonable design can meet the needs of actual production.
The utility model is described in further detail below in conjunction with the accompanying drawings.
Description of the drawings
Fig. 1 is the structure chart of polysilicon fully-automatic production system, and the processing unit of 1- polycrystalline silicon raw materials, 2- raw materials, which detect, to be sieved
Select machine, 3- raw material cleaning devices, 4- raw material drying devices, 5- material transport tracks, the ingot casting device of 6- polysilicons, the spray of 7- crucibles
Coating device, 8- vacuumize/heating unit, 9- silicon ingot transmission rails, the cutting means of 10- silicon ingots, 11- evolution devices, and 12- is gone
Device end to end, 13- flour millings, facing attachment, 14- glue sticking devices, 15- slicing devices, the processing unit of 16- silicon chips, 17- silicon chips
Degumming/washing/drying, packaging, the storage of 18- silicon chips, the retracting device of 19- waste materials.
Specific embodiment
Below in conjunction with the utility model attached drawing and specific designing scheme, to the designing scheme in the utility model embodiment
Be clearly and completely described, it is clear that described embodiment be only the utility model part of the embodiment rather than
Whole embodiments.Based on the embodiment in the utility model patent, those of ordinary skill in the art are not paying creativeness
All other embodiments obtained under the premise of labour belong to the range of this patent protection.
Embodiment 1
As shown in Fig. 1 polysilicon fully-automatic production system construction drawings, a kind of polysilicon fully-automatic production system, including polycrystalline
The processing unit 1 of silicon raw material, the processing unit 1 of the polycrystalline silicon raw material include raw material detection screening machine 2 and raw material cleaning device 3
And raw material drying device 4, the processing unit 1 of the polycrystalline silicon raw material are equipped with material transport track 5, the material transport later
The end of track 5 is connected on the ingot casting device 6 of polysilicon, and the ingot casting device 6 of the polysilicon includes 7 He of crucible spraying device
/ heating unit 8 is vacuumized, silicon ingot transmission rail 9, the ingot casting of the polysilicon are equipped with after the ingot casting device 6 of the polysilicon
6 end of device leads to the cutting means 10 of silicon ingot, and the cutting means 10 of the silicon ingot are followed successively by evolution device 11, decaptitating tail apparatus
12, flour milling, facing attachment 13 and glue sticking device 14 and slicing device 15, the cutting means 10 of the silicon ingot are equipped with waste material later
Retracting device 19 and silicon chip processing unit (16), process is followed successively by the de- of silicon chip before and after the processing unit 16 of the silicon chip
The packaging of glue/washing/drying 17 and silicon chip, 18 two parts of storage.
The material transport track 5 is located between the processing unit 1 of polycrystalline silicon raw material and the ingot casting device 6 of polysilicon, and
Two-part device is connected.
The silicon ingot transmission rail 9 is located between the ingot casting device 6 of polysilicon and the cutting means 10 of silicon ingot.
The evolution device 11, decaptitating tail apparatus 12, flour milling, facing attachment 13, glue sticking device 14 and slicing device 15 are
The cutting means 10 of one silicon ingot processing of cutting overall structure silicon ingot.
The processing of the processing unit 1 of the polycrystalline silicon raw material, the ingot casting device 6 of silicon, the cutting means 10 of silicon ingot, silicon chip fills
Put 16, silicon chip packaging, storage 18 and waste material retracting device 19 be a pipeline system.
System is in application, raw material detection screening machine and raw material in processing unit of the polycrystalline silicon raw material through polycrystalline silicon raw material are clear
The detection screening of cleaning device and raw material drying device after cleaning and drying, passes through material transport orbit transports to polysilicon
Ingot casting device is sprayed in crucible spraying device, then vacuumize/heating unit vacuumized and heated to ingot furnace
Silicon ingot is generated, silicon ingot is transferred to the cutting means of silicon ingot by silicon ingot transmission rail, respectively by evolution device, goes to fill end to end
Put, flour milling, facing attachment and glue sticking device and slicing device silicon ingot is carried out evolution, go end to end, flour milling and chamfering, viscose glue,
Slicing treatment obtains product to crystalline silicon wafer, and silicon chip passes through degumming/washing/drying work of the silicon chip in the processing unit of silicon chip
Sequence is handled, and the product of final inspection qualification enters the packaging of silicon chip, storage process completes the processing of finished product, in process
Retracting device of the waste material of generation through waste material is recycled.
The utility model is structurally consummate, provides a kind of polysilicon fully-automatic production system, designs from polycrystalline silicon raw material to more
Whole processing procedures of crystal silicon waste material, reasonable design can meet the needs of actual production.
Every technical staff's notice:Although the utility model describes according to above-mentioned specific embodiment, this
The invention thought of utility model is not limited to that patent, and any repacking with the utility model thought will all be included in this specially
In sharp scope of patent protection.
Claims (5)
1. a kind of polysilicon fully-automatic production system, which is characterized in that the processing unit (1) including polycrystalline silicon raw material is described more
The processing unit (1) of crystal silicon raw material includes raw material detection screening machine (2) and raw material cleaning device (3) and raw material drying device
(4), material transport track (5) is equipped with after the processing unit (1) of the polycrystalline silicon raw material, the material transport track (5)
End is connected on the ingot casting device (6) of polysilicon, the ingot casting device (6) of the polysilicon including crucible spraying device (7) and
/ heating unit (8) is vacuumized, silicon ingot transmission rail (9), the polysilicon are equipped with after the ingot casting device (6) of the polysilicon
Ingot casting device (6) end lead to the cutting means (10) of silicon ingot, the cutting means (10) of the silicon ingot are followed successively by evolution device
(11), decaptitating tail apparatus (12), flour milling, facing attachment (13) and glue sticking device (14) and slicing device (15), the silicon ingot
Cutting means (10) after be equipped with the retracting device (19) of waste material and the processing unit (16) of silicon chip, the processing of the silicon chip fills
Process is followed successively by degumming/washing/drying (17) of silicon chip and the packaging of silicon chip, storage (18) two parts before and after putting (16).
A kind of 2. polysilicon fully-automatic production system according to claim 1, which is characterized in that the material transport track
(5) between the processing unit of polycrystalline silicon raw material (1) and the ingot casting device (6) of polysilicon, and two-part device is connected
Get up.
A kind of 3. polysilicon fully-automatic production system according to claim 1, which is characterized in that the silicon ingot transmission rail
(9) between the ingot casting device of polysilicon (6) and the cutting means (10) of silicon ingot.
A kind of 4. polysilicon fully-automatic production system according to claim 1, which is characterized in that the evolution device
(11), decaptitating tail apparatus (12), flour milling, facing attachment (13), glue sticking device (14) and slicing device (15) are cut out for a silicon ingot
Cut the cutting means (10) of processing overall structure silicon ingot.
5. a kind of polysilicon fully-automatic production system according to claim 1, which is characterized in that the polycrystalline silicon raw material
Processing unit (1), the ingot casting device (6) of silicon, the cutting means (10) of silicon ingot, the processing unit (16) of silicon chip, the packaging of silicon chip,
The retracting device (19) for being put in storage (18) and waste material is a pipeline system.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721533526.1U CN207567379U (en) | 2017-11-16 | 2017-11-16 | A kind of polysilicon fully-automatic production system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721533526.1U CN207567379U (en) | 2017-11-16 | 2017-11-16 | A kind of polysilicon fully-automatic production system |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207567379U true CN207567379U (en) | 2018-07-03 |
Family
ID=62690862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201721533526.1U Expired - Fee Related CN207567379U (en) | 2017-11-16 | 2017-11-16 | A kind of polysilicon fully-automatic production system |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN207567379U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110329558A (en) * | 2019-06-10 | 2019-10-15 | 浙江晶盛机电股份有限公司 | A kind of silicon material sorted and packaged production line |
CN113013066A (en) * | 2021-03-01 | 2021-06-22 | 昆山基侑电子科技有限公司 | Automatic recovery device for wafer cleaning |
-
2017
- 2017-11-16 CN CN201721533526.1U patent/CN207567379U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110329558A (en) * | 2019-06-10 | 2019-10-15 | 浙江晶盛机电股份有限公司 | A kind of silicon material sorted and packaged production line |
CN113013066A (en) * | 2021-03-01 | 2021-06-22 | 昆山基侑电子科技有限公司 | Automatic recovery device for wafer cleaning |
CN113013066B (en) * | 2021-03-01 | 2023-12-15 | 昆山基侑电子科技有限公司 | Automatic recovery device for wafer cleaning |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9109302B2 (en) | Method for producing silicon wafers, and silicon solar cell | |
CN102656250B (en) | Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates | |
CN101864594A (en) | Ingot casting method for quasi-monocrystalline silicon | |
CN207567379U (en) | A kind of polysilicon fully-automatic production system | |
CN107738370A (en) | A kind of polysilicon chip preparation technology | |
CN109097827A (en) | A kind of twin crystal is to polycrystalline silicon ingot casting and preparation method thereof | |
CN108842179A (en) | A method of setting 3 twin boundary of Σ prepares twin crystal to polycrystalline silicon ingot casting | |
CN102206857A (en) | 111 crystal orientation cast silicon monocrystal and preparation method thereof | |
CN110978303A (en) | Cutting method for improving utilization rate of silicon single crystal rod | |
CN102425008A (en) | Method for preparing large-grain ingot polycrystal silicon | |
CN111364097A (en) | Monocrystalline silicon seed crystal, silicon ingot, silicon block and silicon wafer of directionally solidified ingot casting, and preparation method and application thereof | |
CN103117331A (en) | N-type heterojunction solar cell and manufacturing method thereof | |
CN102242394A (en) | Casting method for producing furnace feeding silicon material similar to monocrystalline silicon ingot and seed crystal placing method | |
CN105568364A (en) | Method for improving yield and/or conversion efficiency of cast monocrystalline silicon ingot | |
CN102011180A (en) | Thermal field structure of single crystal furnace | |
CN106676628A (en) | Preparation method of (100) crystal-orientation small-grain cast multicrystalline silicon | |
CN103730188B (en) | A kind of preparation method of monocrystaline silicon solar cell front electrode silver slurry | |
CN102241077B (en) | Method for manufacturing similar mono-crystal silicon ingot seed crystal by adopting casting process | |
JPS5913219Y2 (en) | Mold for casting polycrystalline silicon ingots | |
CN101362602A (en) | Purification processing method for drawing casting ingot cleaved bark slat and head material | |
CN103094423A (en) | P-type heterojuction solar battery and manufacturing method thereof | |
CN106350865B (en) | The preparation method of high-purity polycrystalline silicon wafer | |
CN102826737A (en) | Quartz ceramic crucible for producing high-efficiency polycrystals and preparation method thereof | |
CN101905886B (en) | Method for purifying polycrystalline silicon by electron beam gradient smelting | |
CN101935041A (en) | Method for extracting polysilicon through electron beams and acid washing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180703 Termination date: 20201116 |
|
CF01 | Termination of patent right due to non-payment of annual fee |