CN102637772B - Method for preparing selective emitter of solar cell - Google Patents
Method for preparing selective emitter of solar cell Download PDFInfo
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- CN102637772B CN102637772B CN201210086038.6A CN201210086038A CN102637772B CN 102637772 B CN102637772 B CN 102637772B CN 201210086038 A CN201210086038 A CN 201210086038A CN 102637772 B CN102637772 B CN 102637772B
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- battery
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- selective emitter
- heavy doping
- silicon chip
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- 238000000034 method Methods 0.000 title abstract description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 36
- 238000009792 diffusion process Methods 0.000 claims abstract description 30
- 238000002360 preparation method Methods 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 238000007650 screen-printing Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- 239000007788 liquid Substances 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 16
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 16
- 239000002002 slurry Substances 0.000 claims description 14
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 8
- 230000000717 retained effect Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 238000007639 printing Methods 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for preparing a selective emitter of a solar cell, which includes: re-diffusing once only, forming a low-doping shallow diffusion area by printing corrosive size layer in a silk screen printing manner so that square resistance of a cell non-grid-line area can be up to 60-160 ohm/sq. The method for preparing the selective emitter of the solar cell is simple in operation procedures, short in process time and capable of being realized by existing equipment and has excellent industrial practicality and high conversion efficiency. Besides, the corrosive size can be cleaned by low-concentration KOH or NaOH solution, discharged waste is clean and has no pollution to the environment. The method for preparing the selective emitter of the solar cell is applicable to preparation of selective emitters.
Description
Technical field
The present invention relates to a kind of preparation method of solar cell, be specifically related to a kind of preparation method of selective emitting electrode structure of crystalline silicon solar battery.
Background technology
At present, the lasting use of conventional energy resource brings a series of economy such as energy scarcity and ecological deterioration and social concern, and development solar cell is one of approach solved the problem.Therefore, countries in the world are all at active development solar cell, and high conversion efficiency, low cost are the inexorable trends of solar cell development.
In all kinds of solar cell, crystal silicon solar energy battery account for the market share of 90%, and wherein the transformation efficiency of monocrystalline silicon battery has exceeded 18%, and polycrystalline cell conversion efficiency have also exceeded 17%.How under cost adds not many prerequisite, improving transformation efficiency is by a relatively large margin the target that everybody pays close attention to.Wherein, selective emitting electrode structure is an extraordinary selection, and its battery structure is: (1) below gate electrode line and near zone formed heavily doped region, to improve open circuit voltage, reduce contact resistance, improve fill factor, curve factor; (2) form lightly doped region at non-grid line, with optimizing surface passivation effect, improve short wave response and carrier collection rate, thus improve short circuit current.
The preparation method being applied to industrial selective emitting electrode structure of crystalline silicon solar battery at present, as technology such as silicon ink and phosphorus diffusions, is printing slurry before diffusion, to form high square resistance and low square resistance region respectively.But printing slurry before carrying out High temperature diffusion, easily introduces diffusion furnace and pollutes, also may introduce pollutant sources, cause the electric leakage of selective emitter solar battery, limit the further lifting of transformation efficiency simultaneously.
Summary of the invention
The object of this invention is to provide a kind of preparation method of selective emitter of solar battery, operating process is simple, and existing equipment can be utilized to realize, process time is short, have good industrial applicibility, transformation efficiency is high, is applicable to prepare selective emitting electrode structure.
A preparation method for selective emitter of solar battery, step of preparation process is:
(1) POCl is adopted
3for the phosphorous diffusion source of liquid state carries out heavy doping to P-type silicon sheet, the square resistance of heavy doping silicon chip is 20-40 Ω/sq;
(2) mode of silk screen printing is adopted to print the corrosivity pulp layer of the corrodible silicon of one deck, to form shallow doped region in the non-grid region of battery the silicon chip after heavy doping;
(3) silicon chip being printed on corrosivity pulp layer is put into the reaction reaction in furnace 25s-15min that temperature is 280-420 DEG C;
(4) the cell piece 30-50min at 20-80 DEG C of temperature after ultrasonic cleaning pyroreaction, ultrasonic cleaning liquid is KOH or the NaOH solution of 0.03-5%, remove remaining chemical solution and residue, the non-grid region of battery is corroded and forms low-doped shallow diffusion region, battery grid region is not corroded and is retained as highly doped dark diffusion region, obtains selective emitter solar battery.
Wherein corrosivity slurry is phosphoric acid and butyl glycol ether, and volume ratio is 50:(22-30).
The invention has the advantages that: only need once heavily to spread, then adopt the mode of silk screen printing to print corrosivity pulp layer to form low-doped shallow diffusion region, the square resistance of the non-grid region of battery can reach 60-160 Ω/sq; Process time is short, and transformation efficiency is higher than existing technique, and the cleaning of corrosive slurry only need join KOH or the NaOH solution of low concentration, and institute's removal waste fluid is more clean, environmentally safe.
Specific embodiment
Below in conjunction with specific embodiment, the present invention is described further, to help understanding content of the present invention.
Embodiment 1:
A preparation method for selective emitter of solar battery, step of preparation process is:
(1) POCl is adopted
3for the phosphorous diffusion source of liquid state carries out heavy doping to P-type silicon sheet, the square resistance of heavy doping silicon chip is 20 Ω/sq;
(2) mode of silk screen printing is adopted to print the corrosivity pulp layer of the corrodible silicon of one deck, to form shallow doped region in the non-grid region of battery the silicon chip after heavy doping;
(3) silicon chip being printed on corrosivity pulp layer is put into the reaction reaction in furnace 25s that temperature is 280 DEG C;
(4) the cell piece 30min at 20 DEG C of temperature after ultrasonic cleaning pyroreaction, ultrasonic cleaning liquid is KOH or the NaOH solution of 0.03%, remove remaining chemical solution and residue, the non-grid region of battery is corroded and forms low-doped shallow diffusion region, battery grid region is not corroded and is retained as highly doped dark diffusion region, obtains selective emitter solar battery.
Wherein corrosivity slurry is phosphoric acid and butyl glycol ether, and volume ratio is 50:22.
Embodiment 2:
A preparation method for selective emitter of solar battery, step of preparation process is:
(1) POCl is adopted
3for the phosphorous diffusion source of liquid state carries out heavy doping to P-type silicon sheet, the square resistance of heavy doping silicon chip is 30 Ω/sq;
(2) mode of silk screen printing is adopted to print the corrosivity pulp layer of the corrodible silicon of one deck, to form shallow doped region in the non-grid region of battery the silicon chip after heavy doping;
(3) silicon chip being printed on corrosivity pulp layer is put into the reaction reaction in furnace 7min that temperature is 350 DEG C;
(4) the cell piece 40min at 50 DEG C of temperature after ultrasonic cleaning pyroreaction, ultrasonic cleaning liquid is KOH or the NaOH solution of 2.5%, remove remaining chemical solution and residue, the non-grid region of battery is corroded and forms low-doped shallow diffusion region, battery grid region is not corroded and is retained as highly doped dark diffusion region, obtains selective emitter solar battery.
Wherein corrosivity slurry is phosphoric acid and butyl glycol ether, and volume ratio is 50:26.
Embodiment 3:
A preparation method for selective emitter of solar battery, step of preparation process is:
(1) POCl is adopted
3for the phosphorous diffusion source of liquid state carries out heavy doping to P-type silicon sheet, the square resistance of heavy doping silicon chip is 40 Ω/sq;
(2) mode of silk screen printing is adopted to print the corrosivity pulp layer of the corrodible silicon of one deck, to form shallow doped region in the non-grid region of battery the silicon chip after heavy doping;
(3) silicon chip being printed on corrosivity pulp layer is put into the reaction reaction in furnace 15min that temperature is 420 DEG C;
(4) the cell piece 50min at 80 DEG C of temperature after ultrasonic cleaning pyroreaction, ultrasonic cleaning liquid is KOH or the NaOH solution of 5%, remove remaining chemical solution and residue, the non-grid region of battery is corroded and forms low-doped shallow diffusion region, battery grid region is not corroded and is retained as highly doped dark diffusion region, obtains selective emitter solar battery.
Wherein corrosivity slurry is phosphoric acid and butyl glycol ether, and volume ratio is 50:30.
Embodiment 4:
A preparation method for selective emitter of solar battery, step of preparation process is:
(1) POCl is adopted
3for the phosphorous diffusion source of liquid state carries out heavy doping to P-type silicon sheet, the square resistance of heavy doping silicon chip is 15 Ω/sq;
(2) mode of silk screen printing is adopted to print the corrosivity pulp layer of the corrodible silicon of one deck, to form shallow doped region in the non-grid region of battery the silicon chip after heavy doping;
(3) silicon chip being printed on corrosivity pulp layer is put into the reaction reaction in furnace 20s that temperature is 250 DEG C;
(4) the cell piece 20min at 20-80 DEG C of temperature after ultrasonic cleaning pyroreaction, ultrasonic cleaning liquid is KOH or the NaOH solution of 0.02%, remove remaining chemical solution and residue, the non-grid region of battery is corroded and forms low-doped shallow diffusion region, battery grid region is not corroded and is retained as highly doped dark diffusion region, obtains selective emitter solar battery.
Wherein corrosivity slurry is phosphoric acid and butyl glycol ether, and volume ratio is 50:20.
Embodiment 5:
A preparation method for selective emitter of solar battery, step of preparation process is:
(1) POCl is adopted
3for the phosphorous diffusion source of liquid state carries out heavy doping to P-type silicon sheet, the square resistance of heavy doping silicon chip is 50 Ω/sq;
(2) mode of silk screen printing is adopted to print the corrosivity pulp layer of the corrodible silicon of one deck, to form shallow doped region in the non-grid region of battery the silicon chip after heavy doping;
(3) silicon chip being printed on corrosivity pulp layer is put into the reaction reaction in furnace 16min that temperature is 450 DEG C;
(4) the cell piece 60min at 20-80 DEG C of temperature after ultrasonic cleaning pyroreaction, ultrasonic cleaning liquid is KOH or the NaOH solution of 6%, remove remaining chemical solution and residue, the non-grid region of battery is corroded and forms low-doped shallow diffusion region, battery grid region is not corroded and is retained as highly doped dark diffusion region, obtains selective emitter solar battery.
Wherein corrosivity slurry is phosphoric acid and butyl glycol ether, and volume ratio is 50:35.
Embodiment 6:
Employing Authorization Notice No. is the preparation technology of the embodiment 1 in the patent of invention of the preparation method of a CN101740661B crystal silicon solar cell selective emitter region:
1, routine cleaning and surface microstructure process are carried out to crystal silicon chip surface;
2, in the top layer of crystal silicon chip growth layer of silicon dioxide, THICKNESS CONTROL is at 5nm;
3, on the silicon dioxide layer of growth, adopt screen printing mode to carry out painting print cover film, form electrode window through ray framework;
4, remove the oxide layer at electrode window through ray place, namely remove and do not covered the titanium dioxide rule layer of film covering; Select the hydrofluoric acid solution of 10% concentration to remove and do not covered the silicon dioxide layer covered;
5, select the sodium hydroxide solution of 5% concentration to remove and cover film;
6, adopt phosphorus oxychloride liquid conversion to be gaseous state, carry out the high concentration diffusing, doping of 55 minutes at the high temperature of 870 DEG C;
7, carry out oxide layer cleaning, be about to original silicon dioxide layer by covering film covering and remove.PSG cleaning (phosphorosilicate glass cleaning) namely on common process;
8, adopt phosphorus oxychloride liquid source to be converted into gaseous state, under the high temperature of 810 DEG C, carry out the low concentration diffusing, doping of 55 minutes;
9, limit is carved;
10, SiNX preparation;
11, positive and negative electrode and back surface field, sintering is printed;
12, test;
The selective emitter solar battery performance that each embodiment obtains is as shown in the table:
| Group | The square resistance of the non-grid region of battery | Single crystal battery conversion efficiency | Polycrystalline battery conversion efficiency |
| Embodiment 1 | 120 | 18.55% | 17.25% |
| Embodiment 2 | 153 | 18.96% | 17.86% |
| Embodiment 3 | 136 | 18.67% | 17.72% |
| Embodiment 4 | 64 | 10.23% | 9.60% |
| Embodiment 5 | 71 | 10.61% | 8.93% |
| Embodiment 6 | 75 | 18.02% | 16.97% |
Can find out that from battery performance the square resistance of the non-grid region of the battery that the present invention obtains can reach 120-160 Ω/sq; Process time is short, and transformation efficiency is high, and the cleaning of corrosive slurry only need join KOH or the NaOH solution of low concentration, and institute's removal waste fluid is more clean, environmentally safe, is applicable to industrialization and produces.
Claims (2)
1. a preparation method for selective emitter of solar battery, is characterized by:
Step of preparation process is:
(1) POCl is adopted
3for the phosphorus diffusion method of liquid source carries out heavy doping to P-type silicon sheet, the square resistance of heavy doping silicon chip is 20-40 Ω/sq;
(2) mode of silk screen printing is adopted to print the corrosivity pulp layer of the corrodible silicon of one deck, to form shallow doped region in the non-grid region of battery the silicon chip after heavy doping;
(3) silicon chip being printed on corrosivity slurry is put into the reaction reaction in furnace 25s-15min that temperature is 280-420 DEG C;
(4) the cell piece 30-50min at 20-80 DEG C of temperature after ultrasonic cleaning pyroreaction, ultrasonic cleaning liquid is KOH or the NaOH solution of 0.03-5%, remove remaining chemical solution and residue, the non-grid region of battery is corroded and forms low-doped shallow diffusion region, battery grid region is not corroded and is retained as highly doped dark diffusion region, obtains selective emitter solar battery;
Wherein corrosivity slurry is phosphoric acid and butyl glycol ether, and volume ratio is 50:(22-30).
2. the preparation method of a kind of selective emitter of solar battery as claimed in claim 1, is characterized by:
Step of preparation process is:
(1) POCl is adopted
3for the phosphorus diffusion method of liquid source carries out heavy doping to P-type silicon sheet, the square resistance of heavy doping silicon chip is 30 Ω/sq;
(2) mode of silk screen printing is adopted to print the corrosivity pulp layer of the corrodible silicon of one deck, to form shallow doped region in the non-grid region of battery the silicon chip after heavy doping;
(3) silicon chip being printed on corrosivity slurry is put into the reaction reaction in furnace 7min that temperature is 350 DEG C;
(4) the cell piece 40min at 50 DEG C of temperature after ultrasonic cleaning pyroreaction, ultrasonic cleaning liquid is KOH or the NaOH solution of 2.5%, remove remaining chemical solution and residue, the non-grid region of battery is corroded and forms low-doped shallow diffusion region, battery grid region is not corroded and is retained as highly doped dark diffusion region, obtains selective emitter solar battery;
Wherein corrosivity slurry is phosphoric acid and butyl glycol ether, and volume ratio is 50:26.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210086038.6A CN102637772B (en) | 2012-03-28 | 2012-03-28 | Method for preparing selective emitter of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210086038.6A CN102637772B (en) | 2012-03-28 | 2012-03-28 | Method for preparing selective emitter of solar cell |
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| Publication Number | Publication Date |
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| CN102637772A CN102637772A (en) | 2012-08-15 |
| CN102637772B true CN102637772B (en) | 2015-03-04 |
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| CN103456842B (en) * | 2013-09-13 | 2016-03-16 | 英利集团有限公司 | Preparation technology's method of testing of N-type solar cell selective back surface field |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533874A (en) * | 2009-04-23 | 2009-09-16 | 中山大学 | Method for preparing selective emitter crystalline silicon solar cell |
| CN101800266A (en) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | Preparation method of selective emitting electrode crystal silicon solar battery |
| CN101950780A (en) * | 2010-09-09 | 2011-01-19 | 浙江百力达太阳能有限公司 | Preparation method of selective emitter solar cell |
| CN102110743A (en) * | 2010-12-01 | 2011-06-29 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass |
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2012
- 2012-03-28 CN CN201210086038.6A patent/CN102637772B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533874A (en) * | 2009-04-23 | 2009-09-16 | 中山大学 | Method for preparing selective emitter crystalline silicon solar cell |
| CN101800266A (en) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | Preparation method of selective emitting electrode crystal silicon solar battery |
| CN101950780A (en) * | 2010-09-09 | 2011-01-19 | 浙江百力达太阳能有限公司 | Preparation method of selective emitter solar cell |
| CN102110743A (en) * | 2010-12-01 | 2011-06-29 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass |
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