CN103456842B - Preparation technology's method of testing of N-type solar cell selective back surface field - Google Patents
Preparation technology's method of testing of N-type solar cell selective back surface field Download PDFInfo
- Publication number
- CN103456842B CN103456842B CN201310418670.0A CN201310418670A CN103456842B CN 103456842 B CN103456842 B CN 103456842B CN 201310418670 A CN201310418670 A CN 201310418670A CN 103456842 B CN103456842 B CN 103456842B
- Authority
- CN
- China
- Prior art keywords
- back surface
- surface field
- testing
- square resistance
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a kind of preparation technology's method of testing of N-type solar cell selective back surface field.This method of testing comprises: step S1: the first square resistance testing the substrate for the preparation of selectivity back surface field; Step S2: carry out the technique of printing corrosive slurry, oven dry and cleaning at the back side of substrate, obtain selectivity back surface field, and the second square resistance of test selection back surface field; Step S3: judge whether the resistance value of the second square resistance reaches desired value, if miss the mark value, the substrate more renewed also repeats step S1, after step S1, regulates the weight of corrosive slurry and/or the temperature of oven dry, and carries out step S2; If reach desired value, the technique in step S2 is defined as the preparation technology of N-type solar cell selective back surface field.The preparation technology of the N-type solar cell selective back surface field that method of testing of the present invention is determined can drop into large-scale production and use.
Description
Technical field
The present invention relates to area of solar cell, more specifically, relate to a kind of preparation technology's method of testing of N-type solar cell selective back surface field.
Background technology
Selectivity aluminum back surface field forms the different region of doping content height at solar cell back surface.In formation doped regions, active region, the low-doped bluk recombination probability that can reduce minority carrier, and can good surface passivation be carried out, reduce the surface recombination probability of minority carrier, thus reduce the reverse saturation current of battery, improve open circuit voltage Voc and the short circuit current Isc of battery.Under gate electrode line and near formation high-doped zone, easily form ohmic contact when doing electrode, and the volume resistance in this region is less, thus reduces the series resistance of solar cell, improve the fill factor, curve factor F.F. of battery.Meanwhile, the horizontal n+/n height knot formed in doped regions and high-doped zone intersection can improve the collection rate of photo-generated carrier, thus improves the short circuit current Isc of battery.In a word, selectivity aluminum back surface field can improve the open circuit voltage Voc of solar cell, short circuit current Isc and fill factor, curve factor F.F., thus makes battery obtain high photoelectric conversion efficiency.
But in the technical process of existing preparation selectivity back surface field, test is not made to the quality of selectivity back of the body field structure, cause the unstable properties of the final selectivity obtained back of the body field structure, can not large batch ofly put into production use.
Summary of the invention
The present invention aims to provide a kind of preparation technology's method of testing of N-type solar cell selective back surface field, can test the preparation technology obtaining suitable preparation selectivity back surface field, is convenient to produce in enormous quantities use.
For solving the problems of the technologies described above, the invention provides a kind of preparation technology's method of testing of N-type solar cell selective back surface field, preparation technology's method of testing of this N-type solar cell selective back surface field comprises: step S1: the first square resistance testing the substrate for the preparation of selectivity back surface field; Step S2: carry out the technique of printing corrosive slurry, oven dry and cleaning at the back side of substrate, obtain selectivity back surface field, and the second square resistance of test selection back surface field; Step S3: judge whether the resistance value of the second square resistance reaches desired value, if miss the mark value, the substrate more renewed also repeats step S1, after step S1, regulates the weight of corrosive slurry and/or the temperature of oven dry, and performs step S2; If reach desired value, the technique in step S2 is defined as the preparation technology of N-type solar cell selective back surface field.
Further, in step s 2, half tone is utilized to carry out printing the technique of corrosive slurry and oven dry.
Further, half tone comprises etching portion, and etching portion comprises etched area, and the technique of printing corrosive slurry is carried out in etched area.
Further, etched area is one or more.
Further, the first square resistance is the square resistance in the region of the preparation selectivity back surface field of substrate.
Further, square resistance method of testing is adopted to the P matrix of N-type solar cell, obtains the first square resistance and the second square resistance.
Further, the resistance value of the first square resistance is 15 ohm to 25 ohm.
Further, desired value is 30 ohm to 40 ohm.
Further, the adjustable range of the weight of corrosive slurry is 0.5 gram to 1 gram.
Further, the adjustable range of the temperature of oven dry is 300 degrees Celsius to 400 degrees Celsius.
Apply technical scheme of the present invention, preparation technology's method of testing of N-type solar cell selective back surface field comprises: step S1: the first square resistance testing the substrate for the preparation of selectivity back surface field; Step S2: carry out the technique of printing corrosive slurry, oven dry and cleaning at the back side of substrate, obtain selectivity back surface field, and the second square resistance of test selection back surface field; Step S3: judge whether the resistance value of the second square resistance reaches desired value, if miss the mark value, the substrate more renewed also repeats step S1, after step S1, regulates the weight of corrosive slurry and/or the temperature of oven dry, and carries out step S2; If reach desired value, the technique in step S2 is defined as the preparation technology of N-type solar cell selective back surface field.The preparation technology of the N-type solar selectively back surface field that method of testing of the present invention is determined obtains by constantly testing, when the resistance value of the square resistance of selectivity back surface field reaches desired value, greatly can improve the open circuit voltage Voc of solar cell, short circuit current Isc and fill factor, curve factor F.F., thus improve photoelectric conversion efficiency.Therefore, the preparation technology of N-type solar cell selective back surface field that method of testing of the present invention is determined can drop into and produces and use on a large scale.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 diagrammatically illustrates the flow chart of preparation technology's method of testing of the N-type solar cell selective back surface field in the present invention;
Fig. 2 diagrammatically illustrates the front view of the first structure of the half tone in preparation technology's method of testing of N-type solar cell selective back surface field of the present invention;
Fig. 3 diagrammatically illustrates the front view of the second structure of the half tone in preparation technology's method of testing of N-type solar cell selective back surface field of the present invention; And
Fig. 4 diagrammatically illustrates the front view of the third structure of the half tone in preparation technology's method of testing of N-type solar cell selective back surface field of the present invention.
Description of reference numerals:
10, half tone; 11, etching portion; 12, etched area.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are described in detail, but the multitude of different ways that the present invention can be defined by the claims and cover is implemented.
Terminological interpretation:
Selectivity back surface field: selectivity aluminum back surface field realizes one of high efficiency method in PN junction crystal-silicon solar cell production technology.Selectivity aluminum back surface field has two features: (1) under gate electrode line and near the highly doped dark diffusion region of formation; (2) low-doped shallow diffusion region is formed in other regions.
Square resistance: square resistance, also known as film resistance, is the measured value of the thermal infrared performance for indirectly characterizing the vacuum coating on the sample such as pellicle film, coating film on glass rete.The size of square resistance and sample size have nothing to do, and its unit is Siements/sq, and rear increase ohm/sq characteristic manner, this unit is directly translated as square resistance or surface resistance, is also called rete resistance for rete measurement.
Four-point probe: this instrument also designs with reference to U.S. A.S.T.M standard according to monocrystalline silicon physical test method national standard, is exclusively used in the instrumentation of measuring semiconductor resistivity of material and square resistance (sheet resistance).
Shown in Figure 1, according to embodiments of the invention, preparation technology's method of testing of N-type solar cell selective back surface field (particularly, use the method can determine the preparation technology of N-type solar cell selective back surface field), comprising: step S1: the first square resistance testing the substrate for the preparation of selectivity back surface field; Step S2: carry out the technique of printing corrosive slurry, oven dry and cleaning at the back side of substrate, obtain selectivity back surface field, and the second square resistance of test selection back surface field; Step S3: judge whether the resistance value of the second square resistance reaches desired value, if miss the mark value, the substrate more renewed also repeats step S1, after step S1, regulates the weight of corrosive slurry and/or the temperature of oven dry, and carries out step S2; If reach desired value, the technique in step S2 is defined as the preparation technology of N-type solar cell selective back surface field.The preparation technology of the N-type solar selectively back surface field determined according to the method for testing of the present embodiment is obtained by continuous test, when the resistance value of the square resistance of selectivity back surface field reaches desired value, greatly can improve the open circuit voltage Voc of solar cell, short circuit current Isc and fill factor, curve factor F.F., thus improve photoelectric conversion efficiency.Therefore, the preparation technology of N-type solar cell selective back surface field that the method for testing of the present embodiment is determined can drop into and produces and use on a large scale.
In the present embodiment, substrate removes damage layer by silicon chip through making herbs into wool, phosphorus boron diffuses to form emitter altogether and formed after back surface field and etching edge three PROCESS FOR TREATMENT.Silicon chip, after above-mentioned three PROCESS FOR TREATMENT, first carries out step S1, namely tests the first square resistance of the substrate for the preparation of selectivity back surface field.Preferably, the first square resistance of test is the square resistance in the region of the preparation selectivity back surface field of substrate.Under normal circumstances, the square resistance of N-type solar cell before preparation selectivity back surface field, namely the first square resistance is 15 ohm to 25 ohm.
Then carry out step S2, in step s 2, selectivity back surface field in substrate, is carried out printing corrosive slurry, oven dry and cleaning and obtains, and in this process, make use of the half tone 10 shown in Fig. 2 or Fig. 3 or Fig. 4 and carry out printing corrosive slurry and stoving process.Preferably, half tone 10 comprises etching portion 11, and etching portion 11 comprises etched area 12, namely the shadow region in Fig. 2, Fig. 3 and Fig. 4, the technique of printing corrosive slurry is carried out in etched area 12, and for follow-up to the square resistance of selectivity back surface field, namely the test of the second square resistance provides necessary architecture basics.The present embodiment carries out constantly test according to the change of the square resistance of selectivity back surface field to determine the preparation technology of N-type solar cell selective back surface field, so etched area 12 can be one, also can be multiple.It should be noted that, because the size of square resistance and sample have nothing to do, so etched area 12 can be set to box-shaped structure as shown in Figure 3 or Figure 4, the polygonized structure shown in Fig. 2 and other the irregular region with certain area, the size of etched area 12 and position can increase and decrease accordingly according to the control overflow of processing quality, easy and simple to handle, be easy to realize.
Preferably, the test of the first square resistance and the second square resistance is all adopt square resistance method of testing to obtain to the P matrix of N-type solar cell, namely adopts four-point probe measurement to obtain.
In this enforcement, desired value is 30 ohm to 40 ohm, when the resistance value of testing the second square resistance obtained is 30 ohm to 40 ohm, namely the weight of the corrosive slurry printed in step S2 and the temperature of oven dry adopted and cleaning regard as the technique of preparation N solar cell selective back surface field, N-type solar cell can be dropped into produce in a large number, substantially increase the quality of the N-type solar battery sheet that enterprise produces.
Preferably, in step s 2, the adjustable range of the weight of corrosive slurry is 0.5 gram to 1 gram.
Preferably, in step s 2, the adjustable range of the temperature of oven dry is 300 degrees Celsius to 400 degrees Celsius.
As can be seen from the above description, the above embodiments of the present invention achieve following technique effect:
The preparation technology of the N-type solar selectively back surface field that the present invention determines obtains by constantly testing, when the square resistance of selectivity back surface field reaches desired value, greatly can improve the open circuit voltage Voc of solar cell, short circuit current Isc and fill factor, curve factor F.F., thus improve photoelectric conversion efficiency.Therefore, the preparation technology of N-type solar cell selective back surface field that method of testing of the present invention is determined can drop into and produces and use on a large scale.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. preparation technology's method of testing of N-type solar cell selective back surface field, is characterized in that, comprising:
Step S1: the first square resistance testing the substrate for the preparation of selectivity back surface field;
Step S2: carry out the technique of printing corrosive slurry, oven dry and cleaning at the back side of described substrate, obtain selectivity back surface field, and test the second square resistance of described selectivity back surface field;
Step S3: judge whether the resistance value of described second square resistance reaches desired value, if do not reach described desired value, the described substrate more renewed repeating said steps S1, after described step S1, regulate the weight of corrosive slurry and/or the temperature of oven dry, and perform described step S2; If reach described desired value, the technique in described step S2 is defined as the preparation technology of N-type solar cell selective back surface field.
2. method of testing according to claim 1, is characterized in that, in described step S2, utilizes half tone (10) to carry out the technique of described printing corrosive slurry and described oven dry.
3. method of testing according to claim 2, is characterized in that, described half tone (10) comprises etching portion (11), and described etching portion (11) comprises etched area (12), and the technique of described printing corrosive slurry is carried out in described etched area (12).
4. method of testing according to claim 3, is characterized in that, described etched area (12) are for one or more.
5. method of testing according to any one of claim 1 to 4, is characterized in that, described first square resistance is the square resistance in the region of the described selectivity back surface field of preparation of described substrate.
6. method of testing according to any one of claim 1 to 4, is characterized in that, adopts square resistance method of testing, obtain described first square resistance and described second square resistance to the P matrix of N-type solar cell.
7. method of testing according to any one of claim 1 to 4, is characterized in that, the resistance value of described first square resistance is 15 ohm to 25 ohm.
8. method of testing according to any one of claim 1 to 4, is characterized in that, described desired value is 30 ohm to 40 ohm.
9. method of testing according to any one of claim 1 to 4, is characterized in that, the adjustable range of the weight of described corrosive slurry is 0.5 gram to 1 gram.
10. method of testing according to any one of claim 1 to 4, is characterized in that, the adjustable range of the temperature of described oven dry is 300 degrees Celsius to 400 degrees Celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310418670.0A CN103456842B (en) | 2013-09-13 | 2013-09-13 | Preparation technology's method of testing of N-type solar cell selective back surface field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310418670.0A CN103456842B (en) | 2013-09-13 | 2013-09-13 | Preparation technology's method of testing of N-type solar cell selective back surface field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103456842A CN103456842A (en) | 2013-12-18 |
| CN103456842B true CN103456842B (en) | 2016-03-16 |
Family
ID=49739006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310418670.0A Active CN103456842B (en) | 2013-09-13 | 2013-09-13 | Preparation technology's method of testing of N-type solar cell selective back surface field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103456842B (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10021440A1 (en) * | 2000-05-03 | 2001-11-15 | Univ Konstanz | Process for producing a solar cell and solar cell produced by this process |
| US20090102502A1 (en) * | 2007-10-22 | 2009-04-23 | Michel Ranjit Frei | Process testers and testing methodology for thin-film photovoltaic devices |
| CN101692062A (en) * | 2009-09-17 | 2010-04-07 | 江苏林洋新能源有限公司 | Method for measuring impurity concentration distribution in p-n junction on texture of monocrystalline silicon solar cell |
| CN101900785A (en) * | 2009-09-28 | 2010-12-01 | 新奥光伏能源有限公司 | Method for measuring surface resistance and contact resistance of solar battery and measuring tool thereof |
| CN102394257A (en) * | 2011-11-17 | 2012-03-28 | 浙江向日葵光能科技股份有限公司 | Method for realizing preparation of selective emitter region by utilizing one-time diffusion |
| CN102637772B (en) * | 2012-03-28 | 2015-03-04 | 上饶光电高科技有限公司 | Method for preparing selective emitter of solar cell |
| CN102800757B (en) * | 2012-08-28 | 2016-03-16 | 英利集团有限公司 | N-type solar cell and manufacturing process thereof |
| CN102842650A (en) * | 2012-09-12 | 2012-12-26 | 英利集团有限公司 | Manufacturing method for N-type solar cell panel and N-type solar cell panel |
-
2013
- 2013-09-13 CN CN201310418670.0A patent/CN103456842B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103456842A (en) | 2013-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Richter et al. | Tunnel oxide passivating electron contacts as full‐area rear emitter of high‐efficiency p‐type silicon solar cells | |
| EP2782144B1 (en) | Method for fabricating heterojunction interdigitated back contact photovoltaic cells | |
| Wagner et al. | Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation | |
| CN103021492B (en) | The manufacture method of silit horizontal PIN type minisize nuclear battery | |
| CN103199143B (en) | The heterojunction solar battery device of N-type hydrogen-doped crystallized silicon passivated | |
| CN103165754A (en) | Preparation process for solar cell resisting potential induced degradation | |
| CN208637428U (en) | N-type crystalline silicon solar battery and photovoltaic module | |
| Untila et al. | Multi-wire metallization for solar cells: Contact resistivity of the interface between the wires and In2O3: Sn, In2O3: F, and ZnO: Al layers | |
| CN111641387A (en) | Method for testing metal contact recombination value and solar cell | |
| Ernst et al. | Macroporous silicon solar cells with an epitaxial emitter | |
| CN212183480U (en) | Solar cell for testing metal contact composite value | |
| Wang et al. | High fill factors of Si solar cells achieved by using an inverse connection between MOS and PN Junctions | |
| CN102956748A (en) | Diffusion method for one-step formation of selective emitter of solar cell | |
| CN103456842B (en) | Preparation technology's method of testing of N-type solar cell selective back surface field | |
| Abass et al. | On the diffusion length and grain size homogeneity requirements for efficient thin-film polycrystalline silicon solar cells | |
| CN104316771B (en) | The Ohmic contact method of testing of silicon carbide device | |
| CN103018564B (en) | Method for testing diffused layer resistance of finished cell | |
| CN206480639U (en) | A kind of varying doping becomes component AlGaAsGaAs nuclear radiation detectors | |
| CN102683504B (en) | The method of crystal silicon solar energy battery manufacture craft is improved by ion implantation arsenic | |
| CN106449455B (en) | A kind of test method of crystal silicon solar energy battery diffusion death layer | |
| Kunz et al. | Advances in evaporated solid-phase-crystallized poly-Si thin-film solar cells on glass (EVA) | |
| Nakayashiki et al. | Effect of material inhomogeneity on the open-circuit voltage of string ribbon Si solar cells | |
| CN109755330A (en) | Pre-expansion discrete piece and its preparation method and application for being passivated contact structures | |
| CN111510068B (en) | Method for testing contact resistivity of passivation contact structure | |
| Grauvogl et al. | The truncated‐pyramid MIS inversion‐layer solar cell: a comprehensive analysis |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |