CN102637657A - 单晶铜键合引线及其制备方法 - Google Patents

单晶铜键合引线及其制备方法 Download PDF

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CN102637657A
CN102637657A CN2011100377589A CN201110037758A CN102637657A CN 102637657 A CN102637657 A CN 102637657A CN 2011100377589 A CN2011100377589 A CN 2011100377589A CN 201110037758 A CN201110037758 A CN 201110037758A CN 102637657 A CN102637657 A CN 102637657A
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宋东升
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Abstract

单晶铜键合引线及其制备方法，涉及微电子材料生产领域，生产工艺融合了金属材料制备工艺、热处理工艺、金刚石模具工艺，保证了生产一致性、可靠性，解决了规模化生产问题。采用的生产过程有：修模和气体保护设备，熔炼，拉丝，清洗，复绕成品、包装以及对成品进行测试。本发明的有益效果是：单晶铜材具有致密的凝固组织，消除了横向晶界，避免了缩孔、气孔等铸造缺陷，使得其塑性加工性能、机械性能、电学性能等都明显高于普通无氧铜，克服了传统铜线拉丝加工的断头多、质量低和生产率低的缺点，能够制备出线径小至0.015mm，高强度、高延伸率、性能稳定的电子封装用键合丝。

Description

单晶铜键合引线及其制备方法
技术领域
本发明涉及微电子材料生产领域，尤其涉及一种单晶铜键合引线及其制备方法。 
背景技术
随着微电子工业的蓬勃发展，集成电路电子封装业正快速的向体积小，高性能，高密集，多芯片方向推进，从而对集成电路封装引线材料的要求特细(Φ0.016mm)，而超细的键合金丝在键合工艺中已不能胜任窄间距、长距离键合技术指标的要求。在超细间距球形键合工艺中，由于封装引脚数的增多，引脚间距的减小，超细的键合金丝在键合过程中常常造成键合引线的摆动、键合断裂和踏丝现象；对器件包封密度的强度也越来越差；成弧能力的稳定性也随之下降，从而加大了操作难度。另外，近几年来，黄金市值一路飚升，十年时间黄金价格增长了200％多，给使用键合金丝的厂家，增加了沉重的原材料成本，同时也加大了生产及流动成本，生产厂商的毛利润由20％降到了6％，从而导致了资金周转缓慢，制约了整个行业的技术提升及规模发展。由此表明，传统的键合金丝根据自身的特点已经达到了其能力极限，再也不能满足细线径、高强度、低弧度、长弧形、并保持良好导电性的要求。因此，随着半导体集成电路和分立器件产业的发展，键合金丝无论从质量上、数量上和成本上都不能满足国内市场的发展要求。特别是低弧度超细金丝，大部份主要依赖于进口，占总进口量的45％以上。所以国家在新的五年计划期间，提出把提高新型电子器件创新技术和工艺研发水平纳入国家专项实施重点规划项目来抓，大力开发高科技、高尖端、节能降耗、绿色环保型半导 体集成电路封装新材料。电子信息时代的飞速发展，其应用基础与核心的大规模集成电路、超大集成电路和甚大规模集成电路的特征间距尺寸已走过了0.18μm、0.13μm、0.10μm的路程，直至当今的0.07μm生产水平。其集成度也达到数千万只晶体管至数亿只晶体管，布线层数由几层发展至10层，布线总长度可高达1.4Km。这样一来，硅芯片上原由铝布线实现多层互连，由于铝的高电阻率制约，显然难以得到发挥。所以在芯片特征间距尺寸达到0.18μm或更小时，根据研究我们采用了电阻率低、电气性能和机械性能俱佳，以及价格低廉的单晶铜丝进行了多次的键合试验，结果解决了多层布线多年要解决的难题。同样情况，由于芯片输入已高达数千输入引脚的大量增加，使原来的金、铝键合丝的数量及长度也大大增加，致使引线电感、电阻很高，从而也难以适应高频高速性能的要求，在这种情况下，我们同样采取了性价比都优于金丝的单晶铜键合引线(Φ0.018mm)进行了引线键合，可贺的是键合后结果取得了预想不到的成功。从此改变了传统键合金丝的市场垄断，实现了单晶铜丝键合引线在我国集成电路微电子封装产业系统中的应用未来发展前景十分广阔。同时也填补了我国在这一领域的空白，节省了货币金属黄金消耗，对增加我国黄金战略储备具有一定重大的意义。 
发明内容
根据以上不足，本发明提出一种单晶铜键合引线及其制备方法，其生产的单晶铜健合引线具有良好的拉伸、剪切强度和延展性，其导电性、导热性好的健合引线。 
本发明的技术方案是：本发明的生产工艺融合了金属材料制备工艺、热处理工艺、金刚石模具工艺，保证了生产一致性、可靠性，解决了规模化生 产问题。 
所述的单晶铜键合引线的原材料为铜，其步骤为： 
第一步：修模和气体保护设备。根据需要修整模具，在制线和退火复绕成品过程中，。采用纯度为过于99.99％的高纯氩气保护设备； 
第二步：采用真空度为10-104MPa高真空炉将纯度高于99.995％高纯铜熔化，升温到1100～1180℃，精炼60～120分钟，整个熔炼过程采用纯度为过于99.99％的高纯氩气保护，并采用定向凝固方式拉制Φ4～Φ8mm单晶铜杆；第三步：将拉制成的高纯度单晶铜杆冷加工至Φ0.95～Φ1.102mm，每道次拉拔加工率为15～25％，拉拔速度控制在40～60m/min；然后分为47～70个道次，采用每道次加工率为7.59～17.82％将单晶铜杆拉至Φ0.018～Φ0.02mm；拉制速度为400～600m/min；0.5mm以上模具表面粗糙度Ra为0.025，0.5mm以下模具表面粗糙度Ra高于0.025；保持拉丝塔轮、导向轮、收线盘等部件高度光洁，表面粗糙度Ra高于0.025；拉丝润滑剂采用水溶性润滑剂，浓度为0.4～0.8％，拉丝时温度为35～45℃； 
第四步：将上步骤拉制成的单晶铜键合引线表面清洗采用超声波清洗，清洗介质采用无水酒精，超声波功率40～80W，频率20～40KHz； 
第五步：将清洗后的单晶铜键合引线在退火复绕设备上进行热处理，热处理过程中采用H2+Ar2保护，其热处理温度为410～425℃，热处理时间为0.7～2.0s，保护气体流量为H20.3～0.6L/min、Ar20.4～0.65L/min；退火复绕时的张力为0.6～2.8g： 
第六步：复绕成品、包装，将热处理后的单晶铜键合引线采用真空吸塑包装，真空度为10-3～10-4Mpa。 
第七步，对成品进行测试。 
本发明的有益效果是：所述的单晶铜键合引线及其制备工艺，其采用的纯度高于99.995％高纯单晶铜杆作为坯料，并采用真空熔炼氩气保护热型连铸设备进行单晶铜杆生产。单晶铜材具有致密的凝固组织，消除了横向晶界，避免了缩孔、气孔等铸造缺陷，使得其塑性加工性能、机械性能、电学性能等都明显高于普通无氧铜，克服了传统铜线拉丝加工的断头多、质量低和生产率低的缺点，能够制备出线径小至0.015mm，高强度、高延伸率、性能稳定的电子封装用键合丝。该键合丝用于高集成度和小型化IC元器件键合引线，还可用于大功率分离器件的弓I线键合，并且可代替键合金丝用于一般电子元器件的引线键合等。 
附图说明
图1是本发明的制备方法流程图。 
具体实施方式
下面根据具体实施方式对本发明进一步说明： 
实施例：第一步：采用超声波修模设备，根据需要修整模具，在制线和退火复绕成品过程中，采用纯度为过于99.99％的高纯氩气保护设备；第二步：设备为键合引线大拉机，真空度为10-104MPa高真空炉将纯度高于99.995％高纯铜熔化，升温到1100～1180℃，精炼60～120分钟，整个熔炼过程采用纯度为过于99.99％的高纯氩气保护，并采用定向凝固方式拉制Φ4～Φ8mm单晶铜杆；第三步：设备为键合引线中拉机、小拉机、细拉机、微拉机。将拉制成的高纯度单晶铜杆冷加工至Φ0.95～Φ1.102mm，每道次拉拔加工率为15～25％，拉拔速度控制在40～60m/min；然后分为47～70个道次，采用每 道次加工率为7.59～17.82％将单晶铜杆拉至Φ0.018～Φ0.02mm；拉制速度为400～600m/min；0.5mm以上模具表面粗糙度Ra为0.025，0.5mm以下模具表面粗糙度Ra高于0.025；保持拉丝塔轮、导向轮、收线盘等部件高度光洁，表面粗糙度Ra高于0.025；拉丝润滑剂采用水溶性润滑剂，浓度为0.4～0.8％，拉丝时温度为35～45℃；第四步：将上步骤拉制成的单晶铜键合引线表面清洗采用超声波清洗，清洗介质采用无水酒精，超声波功率40～80W，频率20～40KHz；第五步：设备为退火装置，将清洗后的单晶铜键合引线在退火复绕设备上进行热处理，热处理过程中采用H2+Ar2保护，其热处理温度为410～425℃，热处理时间为0.7～2.0s，保护气体流量为H20.3～0.6L/min、Ar20.4～0.65L/min；退火复绕时的张力为0.6～2.8g；第六步：设备为复绕装置和真空包装机，复绕成品、包装，将热处理后的单晶铜键合引线采用真空吸塑包装，真空度为10-3～10-4Mpa。第七步，测试成品。 

Claims (1)

1.单晶铜键合引线及其制备方法，其特征是生产工艺步骤为：第一步：修模和气体保护设备，根据需要修整模具，在制线和退火复绕成品过程中，采用纯度为过于99.99％的高纯氩气保护设备；第二步：采用真空度为10-104MPa高真空炉将纯度高于99.995％高纯铜熔化，升温到1100～1180℃，精炼60～120分钟，整个熔炼过程采用纯度为过于99.99％的高纯氩气保护，并采用定向凝固方式拉制Φ4～Φ8mm单晶铜杆；第三步：将拉制成的高纯度单晶铜杆冷加工至Φ0.95～Φ1.102mm，每道次拉拔加工率为15～25％，拉拔速度控制在40～60m/min；然后分为47～70个道次，采用每道次加工率为7.59～17.82％将单晶铜杆拉至Φ0.018～Φ0.02mm；拉制速度为400～600m/min；0.5mm以上模具表面粗糙度Ra为0.025，0.5mm以下模具表面粗糙度Ra高于0.025；保持拉丝塔轮、导向轮、收线盘等部件高度光洁，表面粗糙度Ra高于0.025；拉丝润滑剂采用水溶性润滑剂，浓度为0.4～0.8％，拉丝时温度为35～45℃；第四步：将上步骤拉制成的单晶铜键合引线表面清洗采用超声波清洗，清洗介质采用无水酒精，超声波功率40～80W，频率20～40KHz；第五步：将清洗后的单晶铜键合引线在退火复绕设备上进行热处理，热处理过程中采用H2+Ar2保护，其热处理温度为410～425℃，热处理时间为0.7～2.0s，保护气体流量为H2 0.3～0.6L/min、Ar2 0.4～0.65L/min；退火复绕时的张力为0.6～2.8g：第六步：复绕成品、包装，将热处理后的单晶铜键合引线采用真空吸塑包装，真空度为10-3～10-4Mpa，第七步，对成品进行测试。
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CN115141946A (zh) * 2022-08-03 2022-10-04 中南大学 一种高性能铜合金线丝材短流程制备加工方法
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CN103526138A (zh) * 2013-10-11 2014-01-22 江苏大学 一种单晶铜带的制备方法
CN103526138B (zh) * 2013-10-11 2015-10-28 江苏大学 一种单晶铜带的制备方法
CN105203450A (zh) * 2014-06-26 2015-12-30 上海电缆研究所 电工用铜杆可退火性测试装置及测试方法
CN105162445A (zh) * 2015-09-09 2015-12-16 扬中市佳旺华电器有限公司 一种抗电压冲击的高稳定性总线型复合开关
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CN110860569A (zh) * 2019-11-19 2020-03-06 江西兴成铜业有限公司 一种电工圆铜线的多头拉丝方法
CN110860569B (zh) * 2019-11-19 2022-04-19 江西兴成铜业有限公司 一种电工圆铜线的多头拉丝方法
CN115213076A (zh) * 2022-05-27 2022-10-21 池州学院 一种新型镀钯键合无氧铜线的制备方法
CN115141946A (zh) * 2022-08-03 2022-10-04 中南大学 一种高性能铜合金线丝材短流程制备加工方法

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