CN102636961B - Rotatory lithography machine - Google Patents
Rotatory lithography machine Download PDFInfo
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- CN102636961B CN102636961B CN201110036695.5A CN201110036695A CN102636961B CN 102636961 B CN102636961 B CN 102636961B CN 201110036695 A CN201110036695 A CN 201110036695A CN 102636961 B CN102636961 B CN 102636961B
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Abstract
The invention provides a rotatory lithography machine which comprises a main frame; a silicon wafer table which is used for bearing a silicon wafer and is disposed in the main frame; an exposure device which is used for imaging an exposed image on the silicon wafer and is connected with the main frame; the silicon wafer table can rotate horizontally around its central axis; the exposure device moves horizontally along the silicon wafer table. According to the rotatory lithography machine provided by the invention, the lithography machine station size is reduced; further, the production land occupation is reduced; and the production cost is reduced.
Description
Technical field
The present invention relates to semiconductor manufacturing facility field, particularly a kind of rotation litho machine.
Background technology
In the production run of integrated circuit (IC) chip, the exposure transfer printing (photoetching) of the design configuration of chip on silicon chip surface photoresist is one of most important operation wherein, and this operation equipment used is called litho machine (exposure machine).Litho machine is the equipment of most critical in ic processing.Abroad as far back as just having proposed the concept of photoetching of future generation many years ago, and the technology such as extreme ultraviolet Lithography, electron beam projection lithography, ion beam projection lithography are carried out to a large amount of research, but due to many reasons such as technique, production efficiency, costs, these technology are still difficult to completely practical at present.Account at present the deep UV projection lithography equipment that remains of market leading position.
Current, what the overwhelming majority came into operation is step and repeat lithography machine and advanced scanning projecting photoetching machine.In step and repeat lithography machine, whole image field exposes simultaneously, the easy Design and implementation of this system.Along with market improves constantly the demand that, high precision wide to large scale, fine rule, high-level efficiency and low cost integrated circuit are produced, semiconductor equipment belt is carried out to unprecedented challenge.Step and repeat lithography machine adopts Polaroid technology, for the lens combination that increases image field requirement larger diameter is as support, but this requirement has run into the dual restriction of technical factor and economic factors, thereby limit step and repeat lithography machine to more high precision, larger sized chip manufacture future development.
In this case, advanced scanning projecting photoetching machine is subject to more favor.In advanced scanning projecting photoetching machine, exposure process and step and repeat lithography machine are different.Light beam projects on mask face by a slit transmission illumination device, mask with set at the uniform velocity by this Shu Guang, meanwhile, silicon chip is motion in the opposite direction below lens.This step-by-step scanning photo-etching device is compared with step and repeat lithography machine, there is lower distortion and more large-area image field, simultaneously, the mask platform of the silicon wafer stage of carrying silicon chip and carrying mask can both realize high-speed motion, make advanced scanning projecting photoetching machine there is very high throughput rate, thereby met better the demand of market to semi-conductor chip processing.
Please refer to Fig. 1, its schematic diagram that is existing advanced scanning projecting photoetching machine.As shown in Figure 1, advanced scanning projecting photoetching machine 1 mainly comprises lighting device 10, mask platform 11, lens 12 and silicon wafer stage 13, certainly, also comprises the framework (not shown in figure 1) that connects above-mentioned each parts.In the time that needs carry out photoetching process to silicon chip, mask 100 is placed in mask platform 11, silicon chip 200 is placed on silicon wafer stage 13, described mask platform 11 and described silicon wafer stage 13 reverse (by the direction shown in arrow in Fig. 1) are done synchronous linear motion by certain speed proportional, exposure figure on mask 100 images on silicon chip 200 the most at last, completes the photoetching process to silicon chip 200.
Because mask platform 11 and the silicon wafer stage 13 of existing advanced scanning projecting photoetching machine 1 need oppositely to do synchronous linear motion by certain speed proportional, thereby cause whole advanced scanning projecting photoetching machine board very large, take a large amount of production spaces, improved production cost.
Summary of the invention
The object of the present invention is to provide a kind of rotation litho machine, very large to solve existing advanced scanning projecting photoetching machine board, take a large amount of production spaces, improve the problem of production cost.
For solving the problems of the technologies described above, the invention provides a kind of rotation litho machine, described rotation litho machine comprises: main frame; In order to carry the silicon wafer stage of silicon chip, described silicon wafer stage is arranged in described main frame; In order to exposure figure is imaged in to the exposure device on silicon chip, described exposure device is connected with described main frame; Described silicon wafer stage horizontally rotates around its axis; Described exposure device moves flat as water along described silicon wafer stage.
Optionally, in described rotation litho machine, universal stage centered by described silicon wafer stage, makes 360 degree around its axis and horizontally rotates.
Optionally, in described rotation litho machine, described axis is through the center of described silicon wafer stage vertical with described silicon wafer stage.
Optionally, in described rotation litho machine, in described silicon wafer stage, be provided with dynamic balance structure.
Optionally, in described rotation litho machine, described exposure device comprises lens and lighting device.
Optionally, in described rotation litho machine, the quantity of described exposure device is multiple.
Optionally, in described rotation litho machine, the quantity of described exposure device is two, and two described exposure devices are about the middle rotational symmetry of silicon wafer stage.
Optionally, in described rotation litho machine, also comprise basic framework, described main frame is arranged in described basic framework.
Optionally, in described rotation litho machine, between described main frame and described basic framework, be provided with vibroshock.
Optionally, in described rotation litho machine, the mask platform that also comprises carrying mask, described mask platform is connected with described main frame.
Optionally, in described rotation litho machine, described mask platform is universal stage, and carrying mask horizontally rotates.
Optionally, in described rotation litho machine, also comprise carrying the mask frame of mask, described mask frame is fixed on described silicon wafer stage.
Optionally, in described rotation litho machine, also comprise picking up the mask pick-up of mask, described mask pick-up is connected with described main frame.
Rotation litho machine provided by the invention, horizontally rotates around axis by silicon wafer stage; Exposure device moves flat as water along described silicon wafer stage, realizes exposure figure is imaged in to the photoetching process on full wafer silicon chip.In rotation litho machine provided by the invention, although silicon wafer stage is in the motion that horizontally rotates of doing around axis, but its overall position does not change, it is the space of the original placement silicon wafer stage of its need, do not need more space, and described exposure device is made level to moving along described silicon wafer stage, what it was related is also the occupied segment space of silicon wafer stage, does not need equally more space.Thereby with respect to prior art, rotation litho machine provided by the invention has reduced litho machine board size, further, reduce taking of production space, reduce production cost.
Brief description of the drawings
Fig. 1 is the schematic diagram of existing advanced scanning projecting photoetching machine;
Fig. 2 is the schematic diagram of the rotation litho machine of the embodiment of the present invention one;
Fig. 3 is the schematic diagram of the rotation litho machine of the embodiment of the present invention two;
Fig. 4 is the schematic diagram of the rotation litho machine of the embodiment of the present invention three;
Fig. 5 is the schematic diagram of the rotation litho machine of the embodiment of the present invention four;
Fig. 6 is the schematic diagram of the rotation litho machine of the embodiment of the present invention five.
Embodiment
Below in conjunction with the drawings and specific embodiments, rotation litho machine provided by the invention is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Embodiment mono-
Please refer to Fig. 2, it is the schematic diagram of the rotation litho machine of the embodiment of the present invention one.As shown in Figure 2, rotation litho machine 2 comprises: main frame 20; In order to carry the silicon wafer stage 21 of silicon chip 200, described silicon wafer stage 21 is arranged in described main frame 20; In order to exposure figure is imaged in to the exposure device 22 on silicon chip 200, described exposure device 22 is connected with described main frame 20; Described silicon wafer stage 21 horizontally rotates around its axis; Described exposure device 22 moves flat as water along described silicon wafer stage 21.
In the rotation litho machine 2 of the present embodiment, horizontally rotate around axis by silicon wafer stage 21; Exposure device 22 moves flat as water along described silicon wafer stage 21, realizes exposure figure is imaged in to the photoetching process on full wafer silicon chip 200.In described rotation litho machine 2, although silicon wafer stage 21 is in the motion that horizontally rotates of doing around axis, but its overall position does not change, it is the space of the original placement silicon wafer stage 21 of its need, do not need more space, and described exposure device 22 is made level to moving along described silicon wafer stage 21, what it was related is also the occupied segment space of silicon wafer stage 21, does not need equally more space.Thereby with respect to prior art, rotation litho machine 2 provided by the invention has reduced litho machine board size, further, reduce taking of production space, reduce production cost.
In the present embodiment, described rotation litho machine 2 is maskless exposure, and exposure figure is produced by exposure device 22, thereby has saved the cost of rotation litho machine 2, in addition, has also improved the compactedness of rotation litho machine 2, has reduced litho machine board size.
In the present embodiment, described silicon wafer stage 21 horizontally rotates around axis, can be by realizing at the interior whirligig (not shown in Fig. 2) that arranges of silicon wafer stage 21; Described exposure device 22 is made level to moving along described silicon wafer stage 21, can be connected with a traversing carriage 223 by described exposure device 22, described traversing carriage 223 is connected with main frame 20, moves or described exposure device 22 moves to realize with respect to traversing carriage 223 by described traversing carriage 223 with respect to main frame 20.
In the present embodiment, universal stage centered by described silicon wafer stage 21, makes 360 degree around its axis and horizontally rotates.Make 360 degree by described silicon wafer stage 21 around axis and horizontally rotate, complete after once rotation at described silicon wafer stage 21, can realize the region that on silicon chip 200, radius is identical and all complete photoetching process one time, thereby improve production efficiency.Described axis (not shown in Fig. 2) is through described silicon wafer stage 21 center vertical with described silicon wafer stage 21.
Further, in described silicon wafer stage 21, be provided with dynamic balance structure 211.By the setting of described dynamic balance structure 211, reduce the vibration that silicon wafer stage 21 produces in rotary course, thereby improved the reliability of rotation litho machine 2, further, improve the quality of photoetching process.
In the present embodiment, described exposure device 22 comprises lens 221 and lighting device 222, and described lens 221 and described lighting device 222 couple together, and has further improved the compactedness of rotation litho machine 2, has reduced litho machine board size.
Please continue to refer to Fig. 2, described rotation litho machine 2 also comprises basic framework 23, and described main frame 20 is arranged in described basic framework 23.By described main frame 20 is arranged in described basic framework 23, reduce the vibration in described main frame 20, reduce the vibration of silicon wafer stage 21, thereby improved the reliability of rotation litho machine 2, improve the quality of photoetching process.
Further, between described main frame 20 and described basic framework 23, be provided with vibroshock 231.Can further reduce the vibration in described main frame 20 by described vibroshock 231, reduce the vibration of silicon wafer stage 21, thereby improve the reliability of rotation litho machine 2, improve the quality of photoetching process.Described vibroshock 231 can be by the realization such as spring, air floating structure.
Embodiment bis-
Please refer to Fig. 3, it is the schematic diagram of the rotation litho machine of the embodiment of the present invention two.The difference of the rotation litho machine 2 in rotation litho machine in the present embodiment 3 and embodiment mono-is, in the present embodiment, the quantity of described exposure device 32 is two, and two described exposure devices 32 are about the middle rotational symmetry of silicon wafer stage 31.Can realize many exposures simultaneously by two described exposure devices 32, enhance productivity.In other embodiments of the invention, described exposure device 32 can be also more, and for example three, four etc., described multiple exposure devices are uniformly distributed about the axis of silicon wafer stage 31, and such as the regular polygon such as equilateral triangle, square distributes.In the present embodiment, similarly, described exposure device 32 comprises lens 321 and lighting device 322, and described lens 321 and described lighting device 322 couple together.
Embodiment tri-
Please refer to Fig. 4, it is the schematic diagram of the rotation litho machine of the embodiment of the present invention three.The difference of the rotation litho machine 2 in rotation litho machine 4 and embodiment mono-in the present embodiment is, in the present embodiment, rotates the mask platform 44 that litho machine 4 also comprises carrying mask 100, and described mask platform 44 is connected with described main frame 40.In addition, in the present embodiment, the lens 421 in exposure device 42 and lighting device 422 are separately.In the time that silicon chip 200 is carried out to photoetching process, the light beam sending in lighting device 422, through mask 100, enters lens 421, and the exposing patterns on mask 100 is transferred on silicon chip 200 the most at last, completes the photoetching process to silicon chip 200.
Further, described mask platform 44 is universal stage, and carrying mask 100 horizontally rotates motion, especially, the sense of rotation of described mask 100 is contrary with the sense of rotation of described silicon wafer stage 41, contrary with the sense of rotation of silicon chip 200, thereby improve photoetching efficiency, reduce production costs.In other embodiments of the invention, described mask 100 also can not horizontally rotate motion.In the present embodiment, described exposure device 42 moves flat as water along silicon wafer stage 41, to realize, exposure figure is imaged in to the photoetching process on full wafer silicon chip 200.
Embodiment tetra-
Please refer to Fig. 5, it is the schematic diagram of the rotation litho machine of the embodiment of the present invention four.The difference of the rotation litho machine 4 in rotation litho machine 5 and embodiment tri-in the present embodiment is, in the present embodiment, mask platform 54 is connected with main frame 50 by traversing carriage 523, in addition, the exposure device 52 that comprises lens 521 and lighting device 522 is connected with main frame 50 by same traversing carriage 523, thereby the compactedness that has further improved rotation litho machine 5, has reduced litho machine board size.
Embodiment five
Please refer to Fig. 6, it is the schematic diagram of the rotation litho machine of the embodiment of the present invention five.The difference of the rotation litho machine 2 in rotation litho machine 6 and embodiment mono-in the present embodiment is, in the present embodiment, rotates the mask frame 65 that litho machine 6 also comprises carrying mask 100, and described mask frame 65 is fixed on silicon wafer stage 61.The rotation litho machine 6 providing by the present embodiment can be realized contact proximity printing.In the time that silicon chip 200 is carried out to photoetching process, the light beam sending in lighting device 622 enters lens 621, and then, through mask 100, the exposing patterns on mask 100 is transferred on silicon chip 200 the most at last, completes the photoetching process to silicon chip 200.
Further, described rotation litho machine 6 also comprises picking up the mask pick-up 66 of mask 100, and described mask pick-up 66 is connected with described main frame 60.After completing the photoetching process of a silicon chip 200, can mask 100 be taken off by described mask pick-up 66, change another and treat photoetching silicon chip 200, carry out once new photoetching process.Can carry out easily the replacing of silicon chip 200 by described mask pick-up 66, simplify technique, improve production efficiency.
In various embodiments of the present invention, exposure device (embodiment mono-～embodiment five), lighting device (embodiment tri-, embodiment tetra-), pick device (embodiment five) etc. are to roll with the connected mode of main frame and are connected, in other embodiments of the invention, above-mentioned each device also can be for being slidably connected or being fixedly connected with the connected mode of main frame, and the present invention does not limit this.
Foregoing description is only the description to preferred embodiment of the present invention, the not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, all belong to the protection domain of claims.
Claims (9)
1. a rotation litho machine, comprising:
Main frame;
In order to carry the silicon wafer stage of silicon chip, described silicon wafer stage is arranged in described main frame;
In order to exposure figure is imaged in to the exposure device on silicon chip, described exposure device is connected with described main frame;
In order to carry the mask platform of mask;
It is characterized in that, described silicon wafer stage horizontally rotates around its axis;
Described exposure device moves flat as water along described silicon wafer stage;
Described mask platform is connected with described main frame, and described mask platform is universal stage, and carrying mask horizontally rotates;
The sense of rotation of described mask is contrary with the sense of rotation of described silicon wafer stage.
2. rotation litho machine as claimed in claim 1, is characterized in that, universal stage centered by described silicon wafer stage is made 360 degree around its axis and horizontally rotated.
3. rotation litho machine as claimed in claim 1, is characterized in that, described axis is through the center of described silicon wafer stage vertical with described silicon wafer stage.
4. rotation litho machine as claimed in claim 1, is characterized in that, in described silicon wafer stage, is provided with dynamic balance structure.
5. rotation litho machine as claimed in claim 1, is characterized in that, described exposure device comprises lens and lighting device.
6. rotation litho machine as claimed in claim 1, is characterized in that, the quantity of described exposure device is multiple.
7. rotation litho machine as claimed in claim 6, is characterized in that, the quantity of described exposure device is two, and two described exposure devices are about the middle rotational symmetry of silicon wafer stage.
8. rotation litho machine as claimed in claim 1, is characterized in that, also comprises basic framework, and described main frame is arranged in described basic framework.
9. rotation litho machine as claimed in claim 8, is characterized in that, between described main frame and described basic framework, is provided with vibroshock.
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| CN201110036695.5A CN102636961B (en) | 2011-02-12 | 2011-02-12 | Rotatory lithography machine |
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| CN201110036695.5A CN102636961B (en) | 2011-02-12 | 2011-02-12 | Rotatory lithography machine |
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| CN102636961A CN102636961A (en) | 2012-08-15 |
| CN102636961B true CN102636961B (en) | 2014-08-20 |
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| US10571069B2 (en) * | 2017-09-14 | 2020-02-25 | Applied Materials, Inc. | Gimbal assembly for heater pedestal |
| CN108735584B (en) * | 2018-05-29 | 2021-03-23 | 江苏永鼎股份有限公司 | Semiconductor chip production process |
| CN108710269B (en) * | 2018-05-29 | 2020-08-04 | 绍兴盈顺机电科技有限公司 | Semiconductor silicon wafer rotary photoetching machine |
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| CN101398636A (en) * | 2008-09-17 | 2009-04-01 | 华中科技大学 | Precision vibration damping assembly and vibration damping platform composed of the assembly |
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| US5434424A (en) * | 1994-09-21 | 1995-07-18 | International Business Machines Corporation | Spinning reticle scanning projection lithography exposure system and method |
| JP3172085B2 (en) * | 1996-03-18 | 2001-06-04 | キヤノン株式会社 | Peripheral exposure equipment |
| JP2002099097A (en) * | 2000-09-25 | 2002-04-05 | Nikon Corp | Scanning exposure method and scanning exposure device |
| JP4269610B2 (en) * | 2002-09-17 | 2009-05-27 | 株式会社ニコン | Exposure apparatus and method of manufacturing exposure apparatus |
| KR100558547B1 (en) * | 2003-09-29 | 2006-03-10 | 삼성전자주식회사 | Exposure apparatus |
| JP5083517B2 (en) * | 2007-06-18 | 2012-11-28 | 凸版印刷株式会社 | Different pattern exposure method |
| CN102187280B (en) * | 2008-10-15 | 2014-11-12 | 株式会社尼康 | Exposure apparatus and method for the assembly of the same, and device manufacturing method |
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| CN101398636A (en) * | 2008-09-17 | 2009-04-01 | 华中科技大学 | Precision vibration damping assembly and vibration damping platform composed of the assembly |
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| JP特开2002-99097A 2002.04.05 |
| JP特开2004-111569A 2004.04.08 |
| JP特开2008-310217A 2008.12.25 |
| JP特开平9-260263A 1997.10.03 |
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Address after: 201203 Pudong New Area East Road, No. 1525, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Pudong New Area East Road, No. 1525, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |