CN105319857A - Multi-carrying platform lithography system and exposure method - Google Patents
Multi-carrying platform lithography system and exposure method Download PDFInfo
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- CN105319857A CN105319857A CN201410329571.XA CN201410329571A CN105319857A CN 105319857 A CN105319857 A CN 105319857A CN 201410329571 A CN201410329571 A CN 201410329571A CN 105319857 A CN105319857 A CN 105319857A
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Abstract
The invention discloses a multi-carrying platform lithography system. The system comprises a workbench, which can move along six degrees of freedom; a bearing system, which is arranged on the workbench, is used to bear a plurality of bases, and is capable of switching the places of bases through rotation; a measuring unit, and an exposure unit. When the measuring unit carries out alignment measurement or morphology measurement on the base in the measuring position, the exposure unit exposes the base on the exposure position.
Description
Technical field
The present invention relates to a kind of integrated circuit equipment manufacturing field, particularly relate to a kind of overloading platform etching system and exposure method.
Background technology
A kind of double-workpiece-table litho machine is disclosed in patent WO98/40791.As shown in fig. 1, the litho machine of this invention is mainly for the exposure technology requirement of front road, production capacity is improve while raising imaging performance, its feature is the measurement in etching system core frame to be spatially separated with being exposed on, two work stage can be made to carry out measuring and exposing in corresponding position and the exposure position measured respectively, after two work stage by exchange, make the work stage exposed enter handing-over position and carry out silicon chip handing-over and measurement, the work stage measured enters exposure position and carries out post-exposure, because two work stage carry out exposing and measuring respectively, these two operations are walked abreast in time, thus while raising silicon wafer exposure quality, productive rate also improves.But this dual stage scheme makes whole exposure system floor area strengthen, and also there is not the many potential safety hazards of person in exchange process, when the silicon chip of diameter 450mm, the Cost Problems that the program contains will aggravate further.
A kind of lithography solution of energy parallel exposure is disclosed in US Patent No. 2005264777A1.As shown in Figure 2, program feature single work stage is placed multiple microscope carrier that can carry silicon chip, and the corresponding a set of exposure object lens of every microscope carrier, can use multiple object lens to expose multiple silicon chip simultaneously simultaneously.The program encapsulates mainly for rear road, during each exposure, work stage is static, the microscope carrier of carrying silicon chip is also static, the exposure system that microscope carrier is corresponding need by measuring exposure field in real time, by mask platform 6DOF adjustment motion, exposure Image space position is adjusted in real time again, thus exposure image planes are aimed in the horizontal and vertical directions with silicon chip field, after multiple exposure system completes exposure, work stage does step motion again, navigates to next exposure position.This mode, because simultaneously to multiple silicon wafer exposure, makes production capacity be improved, but needs to measure in real time before each exposure, and productive rate is restricted.
Chip production factory reduces costs for improving production capacity further simultaneously, the silicon chip diameter of whole semicon industry is just experiencing the transformation process from 300mm to 450mm, for adapting to this development trend, prior art needs a kind of while guarantee exposure quality, also can improve Optical Coatings for Photolithography and the method for production capacity, especially be applicable to the large silicon chip of process 450mm.
Summary of the invention
In order to overcome the defect existed in prior art, the invention provides a kind of overloading platform etching system and exposure method of high yield.
In order to realize foregoing invention object, the present invention discloses a kind of overloading platform etching system, and comprising: a work stage, this work stage can along six-freedom motion; Bearing system, is positioned on this work stage, and for carrying multiple substrate, this bearing system is by rotating the place-exchange realized between substrate; One measuring unit and an exposing unit, this measuring unit carries out while locating tab assembly or topography measurement to being positioned at the substrate of measuring position, and this exposing unit exposes the substrate being positioned at exposure position.
Further, this bearing system comprises multiple plummer, and each plummer, for carrying a substrate, drives this bearing system to rotate by this work stage.
Further, the quantity of this plummer is 2N, and wherein N is natural number.
Further, this work stage realizes rotating by a planar motor.
Further, this bearing system is a rotating disk.
Further, this rotating disk is provided with rotating disk mark, for detecting the angle of this turntable rotation.
Further, comprise a substrate exchange system further, for unexposed substrate is loaded on this bearing system, and unload exposed substrate.
Further, this measuring unit is positioned in a gage frame, and this exposing unit is positioned on an exposure frame.
Further, this gage frame and exposure frame are parallel to each other.
Further, this bearing system centrally revolves turnback to realize the place-exchange between substrate in position.
Further, this gage frame and exposure frame are mutually vertical.
Further, this bearing system centrally position 90-degree rotation to realize the place-exchange between substrate.
Further, the quantity of this substrate is 2N, and wherein N is natural number, and this measuring unit carries out while locating tab assembly or topography measurement to N number of substrate being positioned at measurement position, and this exposing unit exposes N number of substrate being positioned at exposure position.
An exposure method for overloading platform etching system, comprising: step one, unload through the exposed exposed substrate of exposing unit, is loaded on bearing system by unexposed substrate; Step 2, unexposed substrate is positioned at measure on position, the substrate to be exposed of having measured through measuring unit is positioned on exposure position; Step 3, treat exposed substrate by exposing unit and expose, and under same exposure passages constraint, measuring unit carries out locating tab assembly and topography measurement to unexposed substrate; Step 4, repetition step one are to three.
Further, before step one, by rotating this bearing system, realize this place-exchange between exposed substrate and substrate to be exposed.
Further, after step one, before step 2, by rotating this bearing system, realize the place-exchange between this unexposed substrate and substrate to be exposed.
Compared with prior art, the present invention's floor area while raising productive rate obviously reduces and cost reduction; Proposition Measuring Time and time shutter walk abreast, and while raising productive rate, ensure exposure quality; Framework technology and work stage technology are organically combined, in limited resource, improves the overall efficiency of etching system.
Accompanying drawing explanation
Can be further understood by following detailed Description Of The Invention and institute's accompanying drawings about the advantages and spirit of the present invention.
Fig. 1 is the structural representation of the double-workpiece-table lithographic equipment used in prior art;
Fig. 2 is the structural representation of the another kind of double-workpiece-table lithographic equipment used in prior art;
Fig. 3 is the exposure process figure of overloading platform etching system involved in the present invention;
Fig. 4 is one of structural representation of overloading platform etching system involved in the present invention;
Fig. 5 is the structural representation two of overloading platform etching system involved in the present invention;
Fig. 6 is the structural representation three of overloading platform etching system involved in the present invention;
Fig. 7 is the structural representation four of overloading platform etching system involved in the present invention.
Embodiment
Specific embodiments of the invention are described in detail below in conjunction with accompanying drawing.
For adapting to the development trend of photoetching process, the invention provides and a kind ofly while guarantee exposure quality, also can improve Optical Coatings for Photolithography and the method for production capacity, being especially applicable to the large silicon chip of process 450mm.
In the present invention, etching system comprises gage frame and exposure frame, gage frame has alignment measurement systems and shape measurement system, exposure frame has exposure system.Also comprise a work stage, described work stage can along six-freedom motion; Bearing system, is positioned on described work stage, and for carrying multiple substrate, described bearing system is by rotating the place-exchange realized between substrate; One measuring unit and an exposing unit, described measuring unit carries out while locating tab assembly or topography measurement to being positioned at the substrate of measuring position, and described exposing unit exposes the substrate being positioned at exposure position.
Alternatively, bearing system is multiple plummer, and each plummer can place a substrate, such as silicon chip, and work stage can be in and exchange position, measure exposure position, and the different microscope carriers in work stage can be in exposure position simultaneously respectively and measure position.
In the overloading platform of single work stage, during the exposure of part microscope carrier, all the other microscope carriers simultaneously according to set exposure passages, can make horizontal survey or topography measurement to the silicon chip on microscope carrier.After part microscope carrier silicon wafer exposure, work stage rotates, and makes to expose complete microscope carrier silicon chip towards exchange position, measures complete microscope carrier silicon chip towards exposure position, and moves to silicon chip and exchange position and carry out unloading and loading.
One aspect of the present invention can, carrying configurable more than one object lens above silicon chip, utilize separate unit overloading work stage to place multiple silicon chip simultaneously; On the other hand, gage frame and exposure frame are corresponding respectively measures position and exposure position; The best microscope carrier number of work stage is 2N, incites somebody to action the corresponding measuring position of wherein half silicon chip simultaneously, and the corresponding exposure position of second half silicon chip, when wherein half microscope carrier silicon chip does horizontal level and topography measurement, second half can simultaneously to microscope carrier silicon wafer exposure.
Specifically, in a work stage, place multiple silicon chip exactly, while part silicon chip is exposed along particular exposure path, and under the constraint of this exposure passages, complete the position to another part silicon chip and topography measurement.Alternatively, work stage is done and is rotated, and makes the silicon chip exposing complete silicon chip complete with measurement realize place-exchange, and after silicon chip has joined, work stage moves to measures position and exposure position, carries out next step and measures and expose; Alternatively, work stage first can not done yet and is rotated, after having been joined by the silicon chip of exposure position, work stage is done and is rotated, make firm handing-over, unexposed silicon chip and measure complete silicon chip to realize place-exchange, work stage moves to again measures position and exposure position, carries out next step and measures and exposure; Alternatively, after work stage also first can move to and measure position and exposure position, more just join, unexposed silicon chip and the place-exchange measuring complete silicon chip, carry out next step and measure and exposure.
Alternatively, exposure silicon chip and measurement silicon chip quantity can be equal, also can not wait, as long as can meet the constraint of exposure passages when exposing, and any one measurement silicon chip can be measured under gage frame.
Alternatively, silicon chip to locating tab assembly and topography measurement can occur in exposing unit silicon chip is exposed time, also can occur in silicon chip exchange when, before or after, whenever or other, can be measured as long as any one measures silicon chip under gage frame.
As shown in Figure 4, Fig. 4 is the structural representation of illustrated overloading platform etching system.
Optical Coatings for Photolithography comprises gage frame 401 and exposure frame 402, is placed on the right and left respectively.A set of silicon chip exchange system 408 is placed on left side, and work stage 407 is placed two microscope carriers 406 above and carried silicon chip (not shown) respectively.Work stage 407, after loading silicon chip, is run and is put in place under etching system controls, and namely left side microscope carrier 406 enters and measures position 403, and the right microscope carrier 406 enters the exposure position 404 below object lens 405.First left side silicon chip is measured in an initial condition, if the right silicon chip is measured, snakelike exposure can be carried out along particular exposure path to the right silicon chip, and under the constraint of this exposure passages, use the aligning in the gage frame of the left side and shape measurement system to measure the mark position of left side silicon chip and pattern.After treating the right exposure, left side measuring system quits work, and preserves and is used for by data measured next time to the exposure of left side silicon chip.
Work stage 407 revolve turnback motion, this motion realizes by multiple means, and further, rotation mode can be work stage integral-rotation, preferably, can adopt planar motor moving magnet scheme realized.Like this, make the silicon chip exposing complete silicon chip complete with measurement realize place-exchange, work stage moves to silicon chip switch and carries out silicon chip unloading and loading.When silicon chip exchanges, silicon chip is measured and can be proceeded, and after silicon chip exchanges, silicon chip to be measured moves to exposure position and exposes, and the silicon chip with stylish exchange starts level and topography measurement.After silicon chip has joined, work stage moves to has measured position 403 and exposure position 404, measures respectively, expose the silicon chip just measured the silicon chip of just handing-over.
Because two silicon chips carry out measuring and exposing simultaneously, the mode exposed again after measuring relative to traditional need, can promote productive rate significantly.
The exposure method of overloading platform etching system provided by the present invention as shown in Figure 3.This overloading platform etching system and silicon chip exchange system carry out silicon chip exchange, unexposed silicon chip to be placed in work stage 301.Work stage, after loading silicon chip, is run and is put in place under etching system controls, and namely left side microscope carrier enters and measures position, and the right microscope carrier enters exposure position 302.First measurement 303 is carried out to left side silicon chip in an initial condition.If the right silicon chip is measured, exposure 304 can be carried out along particular exposure path to the right silicon chip, and under the constraint of this exposure passages, use aligning in left side gage frame and shape measurement system carries out measurement 305 to the mark position of left side silicon chip and pattern carries out measurement 306.After treating the right exposure, left side measuring system quits work, and preserves and is used for by data measured next time to the exposure of left side silicon chip.Judge silicon wafer exposure whether complete 307, if not, return to 302, if exposed complete, then work stage has been rotated in place 308, again carries out silicon chip exchange with silicon chip exchange system, is shifted out by the silicon chip exposed from work stage.
Second embodiment provided by the present invention, as shown in Figure 5.Overloading platform etching system shown in Fig. 5 has four microscope carriers 406, wherein each microscope carrier 406 all carries a silicon chip.In photoetching framework, measuring system 401 and exposure system 402 are placed on the parallel gantry frame of the right and left respectively.Two cover silicon chip exchange systems are placed on left side, and work stage is placed four microscope carriers 406 and carried silicon chip respectively.Work stage is run and is put in place under etching system controls, namely left side microscope carrier enters and measures position 401, the right microscope carrier enters exposure position 402, and the right silicon chip is exposed along particular exposure path, under the constraint of this exposure passages, the aligning in the gage frame of the left side and shape measurement system are measured the mark position of left side silicon chip and pattern.After the exposure of the right, left side measuring system quits work, and preserves and the exposure be used for by data measured left side silicon chip.
Work stage does 180 degree of rotary motions, and this motion realizes by multiple means, and wherein planar motor moving magnet scheme is feasible one.Like this, make the silicon chip exposing complete silicon chip complete with measurement realize place-exchange, work stage moves to silicon chip switch and carries out silicon chip unloading and loading.After silicon chip has joined, work stage moves to has measured position and exposure position, measures respectively, expose the silicon chip just measured the silicon chip of just handing-over.
Carry out at the same time owing to there being four silicon chips simultaneously measuring and exposing, productivity ratio technical scheme 1 doubles.In addition, this programme exchange system is in work stage side, and silicon chip exchanges and can carry out simultaneously, and productive rate can improve further.
Second embodiment provided by the present invention, as shown in Figure 6.Overloading platform etching system shown in Fig. 6 has four microscope carriers 406, wherein each microscope carrier 406 all carries a silicon chip.Different with the second embodiment, in the present embodiment under depression angle, measuring system is intersected with exposure system 90 degree.
Two cover silicon chip exchange systems are placed on diagonal position, and work stage is placed four microscope carriers 406 and carried silicon chip respectively, and work stage is run and put in place under etching system controls.Namely a pair diagonal angle microscope carrier enters and measures position, another enters exposure position to diagonal angle microscope carrier, and the silicon chip being in exposure position is exposed along particular exposure path, under the constraint of this exposure passages, be in aligning in the gage frame of another diagonal position and shape measurement system is measured the mark position of corresponding silicon chip and pattern.After to be exposed, measuring system quits work, and preserves and the exposure be next time used for by data measured this silicon chip.
Work stage does 90 degree of rotary motions, and this motion realizes by multiple means, and wherein planar motor moving magnet scheme is feasible one.Like this, make the silicon chip exposing complete silicon chip complete with measurement realize place-exchange, work stage moves to silicon chip switch and carries out silicon chip unloading and loading.After silicon chip has joined, work stage moves to has measured position 401 and exposure position 402, measures respectively, expose the silicon chip just measured the silicon chip of just handing-over.
In the present embodiment, work stage only does 90 degree of rotations, and comparatively the second embodiment has superiority, and reduces work stage kinematic error on the one hand, saves time on the other hand, improves productive rate.Fig. 7 is the 4th embodiment of the present invention.In this embodiment, to exposure and the exchange of measuring position, realized by the rotating disk 502 be positioned at above work stage, namely work stage does not establish plummer, bearing system uses rotating disk instead to realize the function of overloading platform.Multiple silicon chip is adsorbed on rotating disk 502, realizes silicon chip in exposure position and the conversion of measuring position by the rotation of rotating disk 502.Wherein, rotating disk 502 is provided with rotating disk mark 501, for detecting the anglec of rotation of rotating disk 502, guarantees that rotating disk 502 is rotated in place.This Workpiece platform structure does not have the constraint of guide rail and cable, and can reduce the technical difficulty and cost that realize rotating further, the speed simultaneously exchanged and precision also can correspondingly improve, and are the more excellent example of the present invention.
Compared with prior art, the present invention's floor area while raising productive rate obviously reduces and cost reduction; Proposition Measuring Time and time shutter walk abreast, and while raising productive rate, ensure exposure quality; Framework technology and work stage technology are organically combined, in limited resource, improves the overall efficiency of etching system.
Just preferred embodiment of the present invention described in this instructions, above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (16)
1. an overloading platform etching system, is characterized in that, comprising:
One work stage, described work stage can along six-freedom motion;
Bearing system, is positioned on described work stage, and for carrying multiple substrate, described bearing system is by rotating the place-exchange realized between substrate;
One measuring unit and an exposing unit, described measuring unit carries out while locating tab assembly or topography measurement to being positioned at the substrate of measuring position, and described exposing unit exposes the substrate being positioned at exposure position.
2. overloading platform etching system as claimed in claim 1, it is characterized in that, described bearing system comprises multiple plummer, and each plummer, for carrying a substrate, drives described bearing system to rotate by described work stage.
3. overloading platform etching system as claimed in claim 2, is characterized in that, the quantity of described plummer is 2N, and wherein N is natural number.
4. overloading platform etching system as claimed in claim 2, is characterized in that, described work stage realizes rotating by a planar motor.
5. overloading platform etching system as claimed in claim 1, it is characterized in that, described bearing system is a rotating disk.
6. overloading platform etching system as claimed in claim 5, is characterized in that, described rotating disk is provided with rotating disk mark, for detecting the angle of described turntable rotation.
7. overloading platform etching system as claimed in claim 1, is characterized in that, comprise a substrate exchange system further, for unexposed substrate is loaded on described bearing system, and unload exposed substrate.
8. overloading platform etching system as claimed in claim 1, it is characterized in that, described measuring unit is positioned in a gage frame, and described exposing unit is positioned on an exposure frame.
9. overloading platform etching system as claimed in claim 8, it is characterized in that, described gage frame and exposure frame are parallel to each other.
10. overloading platform etching system as claimed in claim 9, it is characterized in that, described bearing system centrally position revolves turnback to realize the place-exchange between substrate.
11. overloading platform etching systems as claimed in claim 8, it is characterized in that, described gage frame and exposure frame are mutually vertical.
12. overloading platform etching systems as claimed in claim 11, is characterized in that, described bearing system centrally position 90-degree rotation to realize the place-exchange between substrate.
13. overloading platform etching systems as claimed in claim 1, it is characterized in that, the quantity of described substrate is 2N, wherein N is natural number, described measuring unit carries out while locating tab assembly or topography measurement to N number of substrate being positioned at measurement position, and described exposing unit exposes N number of substrate being positioned at exposure position.
The exposure method of the overloading platform etching system of 14. 1 kinds of employings as described in claim 1-13, is characterized in that, comprising:
Step one, to unload through the exposed exposed substrate of exposing unit, unexposed substrate is loaded on bearing system;
Step 2, unexposed substrate is positioned at measure on position, the substrate to be exposed of having measured through measuring unit is positioned on exposure position;
Step 3, treat exposed substrate by exposing unit and expose, and under same exposure passages constraint, measuring unit carries out locating tab assembly and topography measurement to unexposed substrate;
Step 4, repetition step one are to three.
15. exposure methods as claimed in claim 14, is characterized in that, before step one, by rotating described bearing system, and the place-exchange described in realization between exposed substrate and substrate to be exposed.
16. exposure methods as claimed in claim 14, is characterized in that, after step one, before step 2, by rotating described bearing system, realize the place-exchange between described unexposed substrate and substrate to be exposed.
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