CN102629489A - 存储元件和存储器装置 - Google Patents

存储元件和存储器装置 Download PDF

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Publication number
CN102629489A
CN102629489A CN2012100232156A CN201210023215A CN102629489A CN 102629489 A CN102629489 A CN 102629489A CN 2012100232156 A CN2012100232156 A CN 2012100232156A CN 201210023215 A CN201210023215 A CN 201210023215A CN 102629489 A CN102629489 A CN 102629489A
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CN
China
Prior art keywords
layer
magnetization
storage
memory element
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012100232156A
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English (en)
Chinese (zh)
Inventor
内田裕行
细见政功
大森广之
别所和宏
肥后丰
浅山彻哉
山根一阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102629489A publication Critical patent/CN102629489A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
CN2012100232156A 2011-02-03 2012-01-20 存储元件和存储器装置 Pending CN102629489A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011021342A JP2012160681A (ja) 2011-02-03 2011-02-03 記憶素子、メモリ装置
JP2011-021342 2011-02-03

Publications (1)

Publication Number Publication Date
CN102629489A true CN102629489A (zh) 2012-08-08

Family

ID=46587735

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012100232156A Pending CN102629489A (zh) 2011-02-03 2012-01-20 存储元件和存储器装置

Country Status (3)

Country Link
US (1) US20120199922A1 (https=)
JP (1) JP2012160681A (https=)
CN (1) CN102629489A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
US8852760B2 (en) * 2012-04-17 2014-10-07 Headway Technologies, Inc. Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer
JP6173855B2 (ja) 2013-09-20 2017-08-02 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
JP6173854B2 (ja) * 2013-09-20 2017-08-02 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
US9537088B1 (en) * 2015-07-13 2017-01-03 Micron Technology, Inc. Magnetic tunnel junctions
US10263178B2 (en) 2016-09-15 2019-04-16 Toshiba Memory Corporation Magnetic memory device
JP7541928B2 (ja) * 2019-01-30 2024-08-29 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果素子、記憶素子、及び電子機器
CN118201462A (zh) * 2019-03-28 2024-06-14 Tdk株式会社 存储元件、半导体装置、磁记录阵列和存储元件的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174670A (zh) * 2006-11-02 2008-05-07 索尼株式会社 存储元件和存储器
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器
US20090080238A1 (en) * 2007-09-25 2009-03-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetoresistive random access memory including the same
CN101399313A (zh) * 2007-09-26 2009-04-01 株式会社东芝 磁阻元件以及磁存储器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4100025B2 (ja) * 2002-04-09 2008-06-11 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
JP5096702B2 (ja) * 2005-07-28 2012-12-12 株式会社日立製作所 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ
JP4187021B2 (ja) * 2005-12-02 2008-11-26 ソニー株式会社 記憶素子及びメモリ
JP2011008849A (ja) * 2009-06-24 2011-01-13 Sony Corp メモリ及び書き込み制御方法
US8331141B2 (en) * 2009-08-05 2012-12-11 Alexander Mikhailovich Shukh Multibit cell of magnetic random access memory with perpendicular magnetization
US8259420B2 (en) * 2010-02-01 2012-09-04 Headway Technologies, Inc. TMR device with novel free layer structure
JP5725735B2 (ja) * 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5232206B2 (ja) * 2010-09-21 2013-07-10 株式会社東芝 磁気抵抗素子及び磁気ランダムアクセスメモリ
US8470462B2 (en) * 2010-11-30 2013-06-25 Magic Technologies, Inc. Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174670A (zh) * 2006-11-02 2008-05-07 索尼株式会社 存储元件和存储器
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器
US20090080238A1 (en) * 2007-09-25 2009-03-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetoresistive random access memory including the same
CN101399313A (zh) * 2007-09-26 2009-04-01 株式会社东芝 磁阻元件以及磁存储器

Also Published As

Publication number Publication date
JP2012160681A (ja) 2012-08-23
US20120199922A1 (en) 2012-08-09

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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120808