CN102623588B - Method for manufacturing epitaxial structure of gallium nitride green light-emitting diode - Google Patents
Method for manufacturing epitaxial structure of gallium nitride green light-emitting diode Download PDFInfo
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- CN102623588B CN102623588B CN201210093564.5A CN201210093564A CN102623588B CN 102623588 B CN102623588 B CN 102623588B CN 201210093564 A CN201210093564 A CN 201210093564A CN 102623588 B CN102623588 B CN 102623588B
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Abstract
The invention discloses a method for manufacturing an epitaxial structure of a gallium nitride green light-emitting diode. The method comprises the following steps of: 1, providing a substrate; 2, sequentially epitaxially growing a u-GaN layer, an n-GaN layer, a multi-quantum well layer and a p-GaN coupling layer on the substrate; 3, growing a nano-metal layer on the p-GaN coupling layer; 4, growing a P-GaN cover layer on the nano-metal layer; and 5, growing a p-GaN current expansion layer on the P-GaN cover layer to finish the manufacture of the epitaxial structure. The internal quantum efficiency of the green light-emitting diode is enhanced by utilizing metallic plasma with a core-shell structure.
Description
Technical field
The invention belongs to technical field of semiconductor illumination, refer to especially a kind of method of preparing gallium nitride green light LED epitaxial structure.
Background technology
Gallium nitride material is third generation semi-conducting material, energy gap is 3.4ev, due to its stable in properties, it is again the direct band gap luminescent material that wavelength is positioned at royal purple light, therefore be to manufacture royal purple light-emitting diode (LED), the transistorized material of high mobility, national semiconductor lighting classifies gallium nitride material as center as.But gallium nitride light-emitting diode is faced with problems at present, especially at green light LED.Due to the higher In component of gallium nitride green light LED needs, but high In ingredient, and the larger stress of generation makes the internal quantum efficiency of green light LED lower.Seem extremely important so how research strengthens the internal quantum efficiency of green light LED.Due to the higher In component of gallium nitride green light LED needs, but high In ingredient, and the larger stress of generation makes the internal quantum efficiency of green light LED lower.Seem extremely important so how research strengthens the internal quantum efficiency of green light LED.The present invention adopts metal plasma bulk effect, and the plasma pattern (LSP) of the localization that produces strengthens the internal quantum efficiency of green light LED, from but solve one of method of green light LED efficiency low this difficult problem.The method of the internal quantum efficiency of plasma enhancing is at present a lot, but be all the metal of individual layer, for example gold or silver metal, the manufacture method of the metal nanoparticle of this individual layer needs the high temperature anneal to realize, the de-fire of high temperature is processed and is affected gallium nitride and indium gallium nitrogen material quality, makes it to degenerate.The peak of the plasma of single-layer metal enhancing is simultaneously limited, can not well mate with the emission wavelength of green light LED well.What this method was not only made metallic plasma is not need the high temperature anneal, can avoid the impact bringing because of high annealing.The silver, the enhancing peak position that golden nucleocapsid structure can regulate plasma well that adopt enable to strengthen better the internal quantum efficiency of green light LED simultaneously.
Summary of the invention
The object of the invention is to, a kind of method of preparing gallium nitride green light LED epitaxial structure is provided, it is to utilize the plasma of the nucleocapsid structure of metal to strengthen the internal quantum efficiency of green light LED.
The invention provides a kind of method of preparing gallium nitride green light LED epitaxial structure, comprise the following steps:
Step 1: get a substrate;
Step 2: epitaxial growth u-GaN layer, n-GaN layer, multiple quantum well layer and p-GaN coupling layer successively on substrate;
Step 3: growing nano metal level on p-GaN coupling layer;
Step 4: the P-GaN cap rock of growing on nano metal layer;
Step 5: the p-GaN current extending of growing on P-GaN cap rock, completes the preparation of epitaxial structure.
Wherein the material of substrate is silicon, sapphire or gallium nitride, and the surface of substrate is plane or micrographics PSS, or nano graph.
Wherein the doping content of p-GaN coupling layer is 10
18/ cm
3, thickness is 20-70nm.
Wherein the growth pattern of nano metal layer is to grow by inclination electron beam evaporation plating.
Wherein the material of nano metal layer is silver and golden nucleocapsid structure.
Wherein the nucleocapsid structure of nano metal layer is individual layer or multiple layer combination.
Wherein the doping content of P-GaN cap rock is 10
19/ cm
3, thickness is 10-50nm.
Wherein the emission wavelength of multiple quantum well layer is 490-540nm.
The invention has the beneficial effects as follows:
A kind of method of preparing gallium nitride green light LED epitaxial structure of the present invention, it is to utilize the plasma of the nucleocapsid structure of metal to strengthen the internal quantum efficiency of green light LED.
Accompanying drawing explanation
For making auditor can further understand structure of the present invention, feature and object thereof, below in conjunction with being described in detail as follows of accompanying drawing and preferred embodiment, wherein:
Fig. 1-4th, making flow chart of the present invention.
Fig. 5 a, b are the schematic diagram of nucleocapsid structure of the present invention.
Embodiment
Refer to shown in Fig. 1-4, the invention provides a kind of method of preparing gallium nitride green light LED epitaxial structure, comprise the following steps:
Step 1: get a substrate 10 (consulting Fig. 1), wherein the material of substrate 10 is silicon, sapphire or gallium nitride, the surface of substrate 10 is plane or micrographics PSS, or nano graph
Step 2: epitaxial growth u-GaN layer 11, n-GaN layer 12, multiple quantum well layer 13 and p-GaN coupling layer 14 (consulting Fig. 1) successively on substrate 10, the emission wavelength of multiple quantum well layer 13 is 490-540nm.P-GaN coupling layer 14 is the distances that intercouple that regulate MQW (Multiple Quantum Well) and plasma.The coupling of the same MQW of plasma (Multiple Quantum Well) exists Best Coupling distance, and distance is subject to the emission wavelength of MQW and the impact of plasma enhancing peak position.Select suitable distance can make the internal quantum efficiency of green light LED obtain maximum lifting.
Step 3: growing nano metal level 15 (consulting Fig. 2) on p-GaN coupling layer 14, wherein the growth pattern of nano metal layer 15 is to grow by inclination electron beam evaporation plating (EB). inclination growing metal can self assembly form nano particle, avoid high-temperature annealing process.Metal nanoparticle is that the nucleocapsid structure of gold and silver-colored individual layer or multilayer (is consulted Fig. 5 a, b), the unique distinction of this structure is the enhancing peak position that can regulate plasma on a large scale, can think coupling with the wavelength of green light LED exactly, thereby greatly improve the internal quantum efficiency of green light LED.It is mostly to realize by chemical deposition technique that traditional nucleocapsid structure plasma is made, and the making nucleocapsid structure of this method exists problems, and for example process controllability is poor, and nucleocapsid structure quality is not good, and large area deposition difficulty is large etc.What the present invention adopted is brand-new inclination electron beam evaporation plating (EB) growing technology, and this technology not only technique is simple, with low cost, and reliability is high, and can realize large-area manufacturing nucleocapsid structure plasma.This technology promptly industrial circle is applied, thereby can solve " greenish-yellow light belt problem ".
Step 4: the nano metal layer 15 one deck P-GaN cap rock 16 (consulting Fig. 3) of growing, wherein P-GaN cap rock 16 doping contents are 10
19/ cm
3, thickness is that the effect of 10-50nm.P-GaN cap rock 16 is to cover plasma metal level, prevents the electric leakage causing because plasma metal introduces when electricity injects.
The p-GaN current extending 17 (consulting Fig. 4) of growing on step 5:P-GaN cap rock 16.The effect of p-GaN current extending is the current extending as light emitting diode, and its doping content is 10
19/ cm
3.
The above; be only the embodiment in the present invention, but protection scope of the present invention is not limited to this, any people who is familiar with this technology is in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement, all should be encompassed in of the present invention comprise scope within.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (8)
1. a method of preparing gallium nitride green light LED epitaxial structure, comprises the following steps:
Step 1: get a substrate;
Step 2: epitaxial growth u-GaN layer, n-GaN layer, multiple quantum well layer and p-GaN coupling layer successively on substrate;
Step 3: growing nano metal level on p-GaN coupling layer;
Step 4: the P-GaN cap rock of growing on nano metal layer;
Step 5: the p-GaN current extending of growing on P-GaN cap rock, completes the preparation of epitaxial structure.
2. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the material of substrate is silicon, sapphire or gallium nitride, the surface of substrate is plane or micrographics PSS, or nano graph.
3. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the doping content of p-GaN coupling layer is 10
18/ cm
3, thickness is 20-70nm.
4. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the growth pattern of nano metal layer is to grow by inclination electron beam evaporation plating.
5. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 4, wherein the material of nano metal layer is silver and golden nucleocapsid structure.
6. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 5, wherein the nucleocapsid structure of nano metal layer is individual layer or multiple layer combination.
7. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the doping content of P-GaN cap rock is 10
19/ cm
3, thickness is 10-50nm.
8. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the emission wavelength of multiple quantum well layer is 490-540nm.
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| CN104201258B (en) * | 2014-08-22 | 2017-06-09 | 浙江大学城市学院 | The preparation method of the visible light communication light emitting diode based on plasma high modulation bandwidth |
| CN109671794A (en) * | 2018-12-20 | 2019-04-23 | 深圳市科创数字显示技术有限公司 | A kind of solar battery and preparation method thereof based on multi-quantum pit structure |
| CN112186081B (en) * | 2020-09-28 | 2021-08-03 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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| CN1118111A (en) * | 1994-08-25 | 1996-03-06 | 夏普株式会社 | Light-emitting diode array and method for fabricating the same |
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| CN102169930A (en) * | 2011-03-07 | 2011-08-31 | 山东大学 | Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles |
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