CN102623393B - Method for filling micropores by utilizing tin whisker growth - Google Patents
Method for filling micropores by utilizing tin whisker growth Download PDFInfo
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- CN102623393B CN102623393B CN201210068633.7A CN201210068633A CN102623393B CN 102623393 B CN102623393 B CN 102623393B CN 201210068633 A CN201210068633 A CN 201210068633A CN 102623393 B CN102623393 B CN 102623393B
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Abstract
The invention provides a method for filling micropores by utilizing tin whisker growth. The method comprises the following steps: an adhesive layer and a metal layer are deposited on the surface of a substrate with blind holes or through holes, metal is deposited in the blind holes in an electroplating manner to the openings of the blind holes, and a cavity is naturally formed in the deposited metal; photoresist is coated on the surfaces of the blind holes or the through holes and between the adjacent blind holes or through holes in a spinning manner; the metal layer and the adhesive layer beyond the spinning coated photoresist are corroded to form a metal interconnection line communicating the blind holes or the through holes; and two ends of the metal interconnection line are connected with electrodes and electrified to make metal whiskers in the blind holes grow quickly till the whiskers fill the cavity or the metal layer whiskers grow quickly to fill the through holes. By adopting the method, the cavity reserved during electroplating of micro blind holes can be effectively filled, and the defect that electroplating solution with surface tension can not enter the micro blind holes to electroplate is avoided, so that through holes with smaller diameters can be filled.
Description
Technical field
The present invention relates to microelectronics manufacture and encapsulation field, concrete ground says a kind of long method of filling micropore of tin one of the main divisions of the male role in traditional opera of utilizing.
Background technology
Under the constant trend even decreasing of encapsulating structure integral thickness, chip-stacked in the thickness of each layer of chip used just inevitably need attenuate.Silicon via metal interconnection line technology (TSV) is the longitudinal interconnection technique in a kind of chip, its signal of telecommunication passes from the through hole of silicon chip, compare traditional planar metal interconnection line, TSV can improve packaging density significantly, there is saving space, reduce signal delay and improve the advantages such as chip performance.In the time that silicon wafer thickness reduces, silicon chip is difficult for clamping, must be attached to glass basis or first beat blind hole attenuate again.Fill out blind hole for metal, while often making filling perforation due to the effect of gas in hole and metal surface tension by common method, occur the defects such as cavity, be therefore badly in need of finding a kind of reduction even to eliminate the method for these defects.Along with TSV aperture is more and more less, depth-to-width ratio is increasing, utilizes electroplate liquid while electroplating filling perforation to be difficult to enter micropore, and it is more difficult that high-quality TSV electroplates filling metal, and therefore we attempt filling micro-through-hole with acceleration whisker growth.
Summary of the invention
The invention discloses a kind of method of utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera or micropore, utilize the characteristic of the spontaneous growth whisker of metal and fill up cavity or through hole by accelerating whisker growth.
Utilize the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera, comprise the following steps:
(1) on substrate, be processed with surface deposition of adhesion and the metal level successively of blind hole;
(2) the part spin coating photoresist beyond layer on surface of metal blind hole;
(3) in blind hole electroplating deposition metal straight to blind hole opening part, the metal inside self-assembling formation cavity of deposition;
(4) spin coating photoresist between blind hole surface and adjacent blind hole;
(5) erode step (4) spin coating photoresist and sentence metal level and the adhesion layer of outer part, thereby form the metal interconnecting wires that is communicated with blind hole;
(6), by the two ends receiving electrode of metal interconnecting wires, energising, impels metal whisker tachyauxesis to the whisker in blind hole to fill up cavity.
Further, before described step (6) energising also at substrate surface spin coating thick layer glue or Ni layer.
Further, before described step (6) energising, also substrate is placed in heater, utilizes heater to make substrate be warming up to metal in blind hole and easily grow after the temperature of whisker, then to metal interconnecting wires insulation energising.
Further, also comprise that step (7) utilizes photoetching and etching process to remove the metal level beyond blind hole.
Further, the metal depositing in described blind hole is any one in Cd, Sn, Zn, Al or Ag.
A method of utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera, comprises the following steps:
(I) on substrate, be processed with successively surface deposition adhesion layer and the metal level of through hole;
(II) spin coating photoresist between through-hole surfaces and adjacent through-holes;
(III) erode spin coating photoresist and sentence metal level and the adhesion layer of outer part, thereby form the metal interconnecting wires that is communicated with through hole;
(IV), by the two ends receiving electrode of metal interconnecting wires, energising, impels the tachyauxesis of metal level whisker to filling up through hole.
Further, before described step (IV) energising also at substrate surface spin coating thick layer glue or Ni layer.
Further, before described step (IV) energising, also substrate is placed in heater, utilizes heater to make substrate be warming up to metal level and easily grow after the temperature of whisker, then to metal interconnecting wires insulation energising.
Further, also comprise that step (V) utilizes photoetching and etching process to remove the metal level beyond through hole.
Technique effect of the present invention is embodied in: the present invention utilizes the spontaneous growths of whisker such as tin palpus and the tachyauxesis in energising situation to come filling micro-blind vias or through hole.The cavity that this method effectively stays in filling micro-blind vias electroplating process, also can avoid entering the defect that micro through hole is electroplated because electroplate liquid exists surface tension, thereby realize the filling of minor diameter through hole
Accompanying drawing explanation
Fig. 1 is the schematic diagram that the present invention has made the silicon chip of blind hole;
Fig. 2 is the schematic diagram after deposition of adhesion of the present invention;
Fig. 3 is the schematic diagram after plated metal thin layer of the present invention;
Fig. 4 is the schematic diagram after photoetching of the present invention;
Fig. 5 is the schematic diagram after the present invention electroplates;
Fig. 6 is the schematic diagram that thick glue is coated on surface of the present invention;
Fig. 7 is the schematic diagram of the blind hole of filling up metal that obtains after the present invention switches on;
Fig. 8 is the schematic diagram that the present invention has made the silicon chip of through hole;
Fig. 9 is deposition of adhesion of the present invention and adds the schematic diagram after thick metal layers;
Figure 10 is that photoetching corrosion of the present invention removes the schematic diagram after the metal of other parts;
Figure 11 is the schematic diagram that the present invention applies thick glue or Ni layer;
Figure 12 is the schematic diagram that after the present invention switches on, through hole is filled;
Figure 13 is the silicon chip that micropore that the present invention finally obtains is filled.
Embodiment
Below in conjunction with accompanying drawing, the present invention is elaborated.
Tin must be a kind of monocrystalline whiskers of the spontaneous growth of stanniferous coating surface.Under different temperatures, tin must speed of growth difference.Experiment shows, increases to 10 in current density
4a/cm
2time will there is ELECTROMIGRATION PHENOMENON, near ELECTROMIGRATION PHENOMENON atom of shape anode gathers the internal compressive stress that has increased tin coating, has accelerated tin one of the main divisions of the male role in traditional opera long.Experiment is found, is also had this phenomenon for metals such as Cd, Zn, Al, Ag.Based on this discovery, the present invention attempts utilizing electromigration to accelerate whisker growth and fills up micropore.
Utilize the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera, comprise the following steps:
(1) on substrate, be processed with successively surface deposition adhesion layer and the metal level of blind hole, referring to Fig. 1 to 3; Substrate can be silicon chip or silicon nitride, and blind hole size matches with the metal grain size depositing afterwards, and general range is 1 to 10 micron.Adhesion layer can be selected titanium, chromium or metallic compound, and metal level is identical with the metal material depositing afterwards.
(2) the part spin coating photoresist beyond layer on surface of metal blind hole, referring to Fig. 4; Photoresist can be selected PMMA and DQA, and its spin coating mode is: at the even spin coating one deck of layer on surface of metal photoresist, utilize photoetching to make the exposure of blind hole part, develop and remove exposed portion photoresist, leave the unexposed photoresist except blind hole.
(3) in blind hole, electroplating deposition metal straight is to blind hole opening part, and the metal inside self-assembling formation cavity of deposition, referring to Fig. 5;
(4) spin coating photoresist between blind hole surface and adjacent blind hole; Its spin coating mode is: at the even spin coating one deck of layer on surface of metal photoresist, utilize photoetching to make, except part exposure between blind hole and adjacent blind hole, to develop and remove exposed portion photoresist, leave the unexposed photoresist between blind hole and adjacent blind hole.
(5) erode step (4) spin coating photoresist and sentence metal level and the adhesion layer of outer part, thereby form a metal interconnecting wires that is communicated with blind hole;
(6), by the two ends receiving electrode of metal interconnecting wires, energising, impels metal whisker tachyauxesis to the whisker in blind hole to fill up cavity.The whisker of growing on layer on surface of metal for fear of metal, can be at the whole surperficial spin coating thick layer glue of substrate or Ni layer, referring to Fig. 6 before energising.Consider the fastest required temperature difference of every kind of metal whisker growth, before energising, also substrate can be placed in heater, utilize heater to make substrate be warming up to metal in blind hole and easily grow after the temperature of whisker, then to metal interconnecting wires insulation energising.
(7) utilize photoetching and etching process to remove blind hole metal level in addition, referring to Fig. 7.
The present invention utilizes the long method of filling micropore of tin one of the main divisions of the male role in traditional opera not to be only applicable to blind hole, is also applicable to the through hole of 1 to 5 micron, as shown in Figure 8, specifically comprises the following steps:
(I) on substrate, be processed with successively surface deposition adhesion layer and the metal level of through hole, referring to Fig. 9, on the inwall of through hole, also can deposit metal level;
(II) spin coating photoresist between through-hole surfaces and adjacent through-holes, referring to Figure 10;
(III) erode spin coating photoresist and sentence metal level and the adhesion layer of outer part, thereby form a metal interconnecting wires that is communicated with through hole;
(IV), by the two ends receiving electrode of metal interconnecting wires, energising, impels the tachyauxesis of metal level whisker to filling up, referring to Figure 12.Equally, the whisker of growing on layer on surface of metal for fear of metal, can be at the whole surperficial spin coating thick layer glue of substrate or Ni layer, referring to Figure 11 before energising.Consider the fastest required temperature difference of every kind of metal whisker growth, before energising, also substrate is placed in heater, utilize heater to make substrate be warming up to metal in blind hole and easily grow after the temperature of whisker, then to metal interconnecting wires insulation energising.
(V) utilize photoetching and etching process to remove through hole metal level in addition, participate in Figure 13.
Claims (8)
1. utilize the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera, comprise the following steps:
(1) on substrate, be processed with surface deposition of adhesion and the metal level successively of blind hole;
(2) the part spin coating photoresist beyond layer on surface of metal blind hole;
(3) in blind hole electroplating deposition metal straight to blind hole opening part, the metal inside self-assembling formation cavity of deposition;
(4) spin coating photoresist between blind hole surface and adjacent blind hole;
(5) erode step (4) spin coating photoresist and sentence metal level and the adhesion layer of outer part, thereby form the metal interconnecting wires that is communicated with blind hole;
(6) by the two ends receiving electrode of metal interconnecting wires, energising, impels metal whisker tachyauxesis to the whisker in blind hole to fill up cavity, and in described blind hole, the metal of deposition is Sn.
2. the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1, is characterized in that, before described step (6) energising also at substrate surface spin coating thick layer glue or Ni layer.
3. the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1, it is characterized in that, before described step (6) energising, also substrate is placed in heater, utilize heater to make substrate be warming up to metal in blind hole and easily grow after the temperature of whisker, then to metal interconnecting wires insulation energising.
4. the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1, is characterized in that, also comprises that step (7) utilizes photoetching and etching process to remove the metal level beyond blind hole.
5. a method of utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera, comprises the following steps:
(I) on substrate, be processed with successively surface deposition adhesion layer and the metal level of through hole;
(II) spin coating photoresist between through-hole surfaces and adjacent through-holes;
(III) erode spin coating photoresist and sentence metal level and the adhesion layer of outer part, thereby form the metal interconnecting wires that is communicated with through hole;
(IV), by the two ends receiving electrode of metal interconnecting wires, energising, impels the tachyauxesis of metal level whisker to filling up through hole.
6. the method for utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera according to claim 5, is characterized in that, before described step (IV) energising also at substrate surface spin coating thick layer glue or Ni layer.
7. the method for utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera according to claim 5, it is characterized in that, before described step (IV) energising, also substrate is placed in heater, utilizes heater to make substrate be warming up to metal level and easily grow after the temperature of whisker, then to metal interconnecting wires insulation energising.
8. the method for utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera according to claim 5, is characterized in that, also comprises that step (V) utilizes photoetching and etching process to remove the metal level beyond through hole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210068633.7A CN102623393B (en) | 2012-03-15 | 2012-03-15 | Method for filling micropores by utilizing tin whisker growth |
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| CN102623393B true CN102623393B (en) | 2014-06-04 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314569A (en) * | 1990-02-23 | 1994-05-24 | Thomson-Csf | Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes |
| US6605535B1 (en) * | 2002-09-26 | 2003-08-12 | Promos Technologies, Inc | Method of filling trenches using vapor-liquid-solid mechanism |
| CN101363721A (en) * | 2008-09-12 | 2009-02-11 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for quickly testing growth of tin crystal whisker |
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2012
- 2012-03-15 CN CN201210068633.7A patent/CN102623393B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314569A (en) * | 1990-02-23 | 1994-05-24 | Thomson-Csf | Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes |
| US6605535B1 (en) * | 2002-09-26 | 2003-08-12 | Promos Technologies, Inc | Method of filling trenches using vapor-liquid-solid mechanism |
| CN101363721A (en) * | 2008-09-12 | 2009-02-11 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for quickly testing growth of tin crystal whisker |
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