CN102623393A - Method for filling micropores by utilizing tin whisker growth - Google Patents
Method for filling micropores by utilizing tin whisker growth Download PDFInfo
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- CN102623393A CN102623393A CN2012100686337A CN201210068633A CN102623393A CN 102623393 A CN102623393 A CN 102623393A CN 2012100686337 A CN2012100686337 A CN 2012100686337A CN 201210068633 A CN201210068633 A CN 201210068633A CN 102623393 A CN102623393 A CN 102623393A
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Abstract
The invention provides a method for filling micropores by utilizing tin whisker growth. The method comprises the following steps: an adhesive layer and a metal layer are deposited on the surface of a substrate with blind holes or through holes, metal is deposited in the blind holes in an electroplating manner to the openings of the blind holes, and a cavity is naturally formed in the deposited metal; photoresist is coated on the surfaces of the blind holes or the through holes and between the adjacent blind holes or through holes in a spinning manner; the metal layer and the adhesive layer beyond the spinning coated photoresist are corroded to form a metal interconnection line communicating the blind holes or the through holes; and two ends of the metal interconnection line are connected with electrodes and electrified to make metal whiskers in the blind holes grow quickly till the whiskers fill the cavity or the metal layer whiskers grow quickly to fill the through holes. By adopting the method, the cavity reserved during electroplating of micro blind holes can be effectively filled, and the defect that electroplating solution with surface tension can not enter the micro blind holes to electroplate is avoided, so that through holes with smaller diameters can be filled.
Description
Technical field
The present invention relates to microelectronics manufacturing and encapsulation field, concrete ground a kind of long method of filling micropore of tin one of the main divisions of the male role in traditional opera of utilizing of saying so.
Background technology
Under even the trend that decreases constant at the encapsulating structure integral thickness, chip-stacked in the thickness of used each layer chip just inevitably need attenuate.Silicon via metal interconnection line technology (TSV) is the vertical interconnection technique in a kind of chip; Its signal of telecommunication passes from the through hole of silicon chip, compares traditional planar metal interconnection line, and TSV can improve packaging density significantly; Have the saving space, reduce signal delay and improve advantages such as chip performance.When silicon wafer thickness reduced, silicon chip was difficult for clamping, must or beat earlier blind hole attenuate again attached to glass basis.Fill out blind hole for metal, occur defectives such as cavity when making filling perforation, therefore be badly in need of finding a kind of method that reduces even eliminate these defectives with the frequent effect of common method owing to gas in the hole and metal surface tension.Along with the TSV aperture is more and more littler, depth-to-width ratio is increasing, and electroplate liquid is difficult to get into micropore when utilizing the plating filling perforation, and high-quality TSV electroplates and fills metal difficulty more, so we attempt filling micro-through-hole with the acceleration whisker growth.
Summary of the invention
The invention discloses a kind of method of utilizing long filling vias of tin one of the main divisions of the male role in traditional opera or micropore, utilize the characteristic of the spontaneous growth whisker of metal and fill up cavity or through hole through quickening whisker growth.
A kind of long method of filling blind hole of tin one of the main divisions of the male role in traditional opera of utilizing may further comprise the steps:
(1) surface that on substrate, is processed with blind hole is deposition of adhesion and metal level successively;
(2) the part spin coating photoresist beyond the layer on surface of metal blind hole;
(3) the electroplating deposition metal is until the blind hole opening part in blind hole, and the metal inside of deposition forms the cavity naturally;
(4) spin coating photoresist between blind hole surface and adjacent blind hole;
(5) erode metal level and the adhesion layer that step (4) spin coating photoresist is sentenced exterior portions, thereby form the metal interconnecting wires that is communicated with blind hole;
(6) with the two ends receiving electrode of metal interconnecting wires, energising impels metal whisker tachyauxesis to the whisker in the blind hole to fill up the cavity.
Further, before said step (6) energising also at substrate surface spin coating one bed thickness glue or Ni layer.
Further, before said step (6) energising, also substrate is placed in the heater, utilize heater to make substrate be warming up to metal in the blind hole and grow easily after the temperature of whisker, again to metal interconnecting wires insulation energising.
Further, comprise that also step (7) utilizes photoetching and etching process to remove the metal level beyond the blind hole.
Further, the metal that deposits in the said blind hole is any one among Cd, Sn, Zn, Al or the Ag.
A kind of method of utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera may further comprise the steps:
(I) on substrate, be processed with the surface deposition adhesion layer and the metal level of through hole successively;
(II) spin coating photoresist between through-hole surfaces and adjacent through-holes;
(III) erode metal level and the adhesion layer that the spin coating photoresist is sentenced exterior portions, thereby form the metal interconnecting wires that is communicated with through hole;
(IV) with the two ends receiving electrode of metal interconnecting wires, energising impels the tachyauxesis of metal level whisker to filling up through hole.
Further, before said step (IV) energising also at substrate surface spin coating one bed thickness glue or Ni layer.
Further, before said step (IV) energising, also substrate is placed in the heater, utilize heater to make substrate be warming up to metal level and grow easily after the temperature of whisker, again to metal interconnecting wires insulation energising.
Further, comprise that also step (V) utilizes photoetching and etching process to remove the metal level beyond the through hole.
Technique effect of the present invention is embodied in: the present invention utilizes the tin palpus to wait spontaneous growth of whisker and the tachyauxesis under the energising situation to come filling micro-blind vias or through hole.The cavity that this method effectively stays in the filling micro-blind vias electroplating process also can be avoided because there is surface tension in electroplate liquid and can't gets into the defective that micro through hole is electroplated, thereby realizes the filling of minor diameter through hole
Description of drawings
Fig. 1 has made the sketch map of the silicon chip of blind hole for the present invention;
Fig. 2 is the sketch map after the deposition of adhesion of the present invention;
Fig. 3 is the sketch map behind the plated metal thin layer of the present invention;
Fig. 4 is the sketch map after the photoetching of the present invention;
Fig. 5 is the sketch map of the present invention after electroplating;
Fig. 6 is the sketch map of thick glue on the surfaces coated of the present invention;
Fig. 7 is the sketch map of the blind hole of filling up metal that obtains after the present invention energising;
Fig. 8 has made the sketch map of the silicon chip of through hole for the present invention;
Fig. 9 for deposition of adhesion of the present invention and add thick metal layers after sketch map;
Figure 10 removes the sketch map behind the metal of other parts for photoetching corrosion of the present invention;
The sketch map of Figure 11 thick glue or Ni layer for the present invention applies;
Figure 12 sketch map that back through hole is filled for the present invention switches on;
The silicon chip that the micropore that Figure 13 obtains for the present invention at last is filled.
Embodiment
Below in conjunction with accompanying drawing the present invention is elaborated.
Tin must be a kind of monocrystalline whiskers of the spontaneous growth of stanniferous coating surface.Under different temperatures, the long speed of tin one of the main divisions of the male role in traditional opera is different.Experiment shows, increases to 10 in current density
4A/cm
2The time ELECTROMIGRATION PHENOMENON will take place, near ELECTROMIGRATION PHENOMENON atom of shape anode gathers the internal compressive stress that has increased tin coating, it is long to have quickened the tin one of the main divisions of the male role in traditional opera.Experiment finds for metals such as Cd, Zn, Al, Ag this phenomenon is arranged also.Based on this discovery, the present invention attempts utilizing electromigration to quicken whisker growth and fills up micropore.
A kind of long method of filling blind hole of tin one of the main divisions of the male role in traditional opera of utilizing may further comprise the steps:
(1) on substrate, is processed with the surface deposition adhesion layer and the metal level of blind hole successively, referring to Fig. 1 to 3; Substrate can be silicon chip or silicon nitride, and the blind hole size is complementary with the metal grain size that deposits afterwards, and general range is 1 to 10 micron.Adhesion layer can be selected titanium, chromium or metallic compound for use, and metal level is identical with the metal material that deposits afterwards.
(2) the part spin coating photoresist beyond the layer on surface of metal blind hole is referring to Fig. 4; Photoresist can be selected PMMA and DQA for use, and its spin coating mode is: at the even spin coating one deck of layer on surface of metal photoresist, utilize photoetching that blind hole is partly made public, develop and remove the exposed portion photoresist, stay the unexposed photoresist except that blind hole.
(3) the electroplating deposition metal is until the blind hole opening part in blind hole, and the metal inside of deposition forms the cavity naturally, referring to Fig. 5;
(4) spin coating photoresist between blind hole surface and adjacent blind hole; Its spin coating mode is: at the even spin coating one deck of layer on surface of metal photoresist, utilize photoetching to make except that part exposure between blind hole and the adjacent blind hole, develop and remove the exposed portion photoresist, stay the unexposed photoresist between blind hole and the adjacent blind hole.
(5) erode step (4) spin coating photoresist and sentence the metal level and the adhesion layer of exterior portions, thereby form a metal interconnecting wires that is communicated with blind hole;
(6) with the two ends receiving electrode of metal interconnecting wires, energising impels metal whisker tachyauxesis to the whisker in the blind hole to fill up the cavity.For fear of the metal whisker of on layer on surface of metal, growing, can be at whole surperficial spin coating one bed thickness glue of substrate or Ni layer, referring to Fig. 6 before energising.Consider that the fast the most required temperature of every kind of metal whisker growth is different, before energising, also can substrate be placed in the heater, utilize heater to make substrate be warming up to metal in the blind hole and grow easily after the temperature of whisker, again to metal interconnecting wires insulation energising.
(7) utilize photoetching and etching process to remove the metal level beyond the blind hole, referring to Fig. 7.
The present invention utilizes the long method of filling micropore of tin one of the main divisions of the male role in traditional opera not to be only applicable to blind hole, also is applicable to 1 to 5 micron through hole, and is as shown in Figure 8, specifically may further comprise the steps:
(I) on substrate, be processed with the surface deposition adhesion layer and the metal level of through hole successively,, also can deposit metal level on the inwall of through hole referring to Fig. 9;
(II) spin coating photoresist between through-hole surfaces and adjacent through-holes is referring to Figure 10;
(III) erode metal level and the adhesion layer that the spin coating photoresist is sentenced exterior portions, thereby form a metal interconnecting wires that is communicated with through hole;
(IV) with the two ends receiving electrode of metal interconnecting wires, energising impels the tachyauxesis of metal level whisker to filling up, referring to Figure 12.Equally, for fear of the metal whisker of on layer on surface of metal, growing, can be at whole surperficial spin coating one bed thickness glue of substrate or Ni layer, referring to Figure 11 before energising.Consider that the fast the most required temperature of every kind of metal whisker growth is different, before energising, also substrate is placed in the heater, utilize heater to make substrate be warming up to metal in the blind hole and grow easily after the temperature of whisker, again to metal interconnecting wires insulation energising.
(V) utilize photoetching and etching process to remove the metal level beyond the through hole, participate in Figure 13.
Claims (9)
1. one kind is utilized the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera, may further comprise the steps:
(1) surface that on substrate, is processed with blind hole is deposition of adhesion and metal level successively;
(2) the part spin coating photoresist beyond the layer on surface of metal blind hole;
(3) the electroplating deposition metal is until the blind hole opening part in blind hole, and the metal inside of deposition forms the cavity naturally;
(4) spin coating photoresist between blind hole surface and adjacent blind hole;
(5) erode metal level and the adhesion layer that step (4) spin coating photoresist is sentenced exterior portions, thereby form the metal interconnecting wires that is communicated with blind hole;
(6) with the two ends receiving electrode of metal interconnecting wires, energising impels metal whisker tachyauxesis to the whisker in the blind hole to fill up the cavity.
2. the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1 is characterized in that, before said step (6) energising also at substrate surface spin coating one bed thickness glue or Ni layer.
3. the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1; It is characterized in that; Before said step (6) energising, also substrate is placed in the heater; Utilize heater to make substrate be warming up to metal in the blind hole and grow easily after the temperature of whisker, again to metal interconnecting wires insulation energising.
4. the long method of filling blind hole of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1 is characterized in that, comprises that also step (7) utilizes photoetching and etching process to remove blind hole metal level in addition.
5. the long method of filling out blind hole of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1 is characterized in that the metal of deposition is any one among Cd, Sn, Zn, Al or the Ag in the said blind hole.
6. method of utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera may further comprise the steps:
(I) on substrate, be processed with the surface deposition adhesion layer and the metal level of through hole successively;
(II) spin coating photoresist between through-hole surfaces and adjacent through-holes;
(III) erode metal level and the adhesion layer that the spin coating photoresist is sentenced exterior portions, thereby form the metal interconnecting wires that is communicated with through hole;
(IV) with the two ends receiving electrode of metal interconnecting wires, energising impels the tachyauxesis of metal level whisker to filling up through hole.
7. the method for utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera according to claim 6 is characterized in that, before said step (IV) energising also at substrate surface spin coating one bed thickness glue or Ni layer.
8. the method for utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera according to claim 6; It is characterized in that; Before said step (IV) energising, also substrate is placed in the heater, utilize heater to make substrate be warming up to metal level and grow easily after the temperature of whisker, again to metal interconnecting wires insulation energising.
9. the method for utilizing the long filling vias of tin one of the main divisions of the male role in traditional opera according to claim 1 is characterized in that, comprises that also step (V) utilizes photoetching and etching process to remove the metal level beyond the through hole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210068633.7A CN102623393B (en) | 2012-03-15 | 2012-03-15 | Method for filling micropores by utilizing tin whisker growth |
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| CN201210068633.7A CN102623393B (en) | 2012-03-15 | 2012-03-15 | Method for filling micropores by utilizing tin whisker growth |
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| CN102623393B CN102623393B (en) | 2014-06-04 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314569A (en) * | 1990-02-23 | 1994-05-24 | Thomson-Csf | Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes |
| US6605535B1 (en) * | 2002-09-26 | 2003-08-12 | Promos Technologies, Inc | Method of filling trenches using vapor-liquid-solid mechanism |
| CN101363721A (en) * | 2008-09-12 | 2009-02-11 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for quickly testing growth of tin crystal whisker |
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2012
- 2012-03-15 CN CN201210068633.7A patent/CN102623393B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314569A (en) * | 1990-02-23 | 1994-05-24 | Thomson-Csf | Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes |
| US6605535B1 (en) * | 2002-09-26 | 2003-08-12 | Promos Technologies, Inc | Method of filling trenches using vapor-liquid-solid mechanism |
| CN101363721A (en) * | 2008-09-12 | 2009-02-11 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for quickly testing growth of tin crystal whisker |
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