CN102620840B - 一种晶圆级封装的红外焦平面阵列器件及其制造方法 - Google Patents
一种晶圆级封装的红外焦平面阵列器件及其制造方法 Download PDFInfo
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CN103199097B (zh) * | 2013-04-08 | 2016-03-02 | 孙健 | 一种像元结构及基于像元结构的非致冷红外焦平面探测器 |
US9412927B2 (en) * | 2014-05-07 | 2016-08-09 | Maxim Integrated Products, Inc. | Formation of a thermopile sensor utilizing CMOS fabrication techniques |
CN104157719A (zh) * | 2014-07-08 | 2014-11-19 | 浙江大立科技股份有限公司 | 晶圆级封装红外探测器及其制备方法 |
CN105845793B (zh) * | 2016-06-01 | 2017-12-22 | 天津三安光电有限公司 | 一种不可见光发光二极管及其制作方法 |
CN107478343B (zh) * | 2016-06-07 | 2018-09-11 | 上海新微技术研发中心有限公司 | 辐射计及其制造方法 |
CN106249372A (zh) * | 2016-09-18 | 2016-12-21 | 上海晶鼎光电科技有限公司 | 一种晶圆级集成光学窗口及其制作方法 |
CN108088568A (zh) * | 2018-02-06 | 2018-05-29 | 青岛大学 | 超远距离被动式红外探测系统及舰船航行规避预警系统 |
CN113735053B (zh) * | 2021-08-30 | 2024-01-30 | 武汉大学 | 一种微机电红外传感器及其制备方法 |
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US7268349B2 (en) * | 2004-09-17 | 2007-09-11 | Korea Advanced Institute Of Science And Technology | Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure |
CN102384789A (zh) * | 2010-08-30 | 2012-03-21 | 中国科学院微电子研究所 | 红外焦平面阵列器件及其制作方法 |
CN102386268A (zh) * | 2010-08-30 | 2012-03-21 | 中国科学院微电子研究所 | 红外焦平面阵列器件及其制作方法 |
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US7268349B2 (en) * | 2004-09-17 | 2007-09-11 | Korea Advanced Institute Of Science And Technology | Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure |
CN102384789A (zh) * | 2010-08-30 | 2012-03-21 | 中国科学院微电子研究所 | 红外焦平面阵列器件及其制作方法 |
CN102386268A (zh) * | 2010-08-30 | 2012-03-21 | 中国科学院微电子研究所 | 红外焦平面阵列器件及其制作方法 |
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