CN102618852B - 低电阻率材料的束诱导沉积 - Google Patents

低电阻率材料的束诱导沉积 Download PDF

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Publication number
CN102618852B
CN102618852B CN201210020842.4A CN201210020842A CN102618852B CN 102618852 B CN102618852 B CN 102618852B CN 201210020842 A CN201210020842 A CN 201210020842A CN 102618852 B CN102618852 B CN 102618852B
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China
Prior art keywords
resistivity
ion beam
deposited
tin
substrate
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Expired - Fee Related
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CN201210020842.4A
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English (en)
Chinese (zh)
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CN102618852A (zh
Inventor
S.兰多夫
C.D.钱德勒
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FEI Co
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FEI Co
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/067—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201210020842.4A 2011-01-31 2012-01-30 低电阻率材料的束诱导沉积 Expired - Fee Related CN102618852B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161438144P 2011-01-31 2011-01-31
US61/438144 2011-01-31

Publications (2)

Publication Number Publication Date
CN102618852A CN102618852A (zh) 2012-08-01
CN102618852B true CN102618852B (zh) 2016-03-02

Family

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Family Applications (1)

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CN201210020842.4A Expired - Fee Related CN102618852B (zh) 2011-01-31 2012-01-30 低电阻率材料的束诱导沉积

Country Status (4)

Country Link
US (2) US9090973B2 (https=)
EP (1) EP2481829A3 (https=)
JP (1) JP5930735B2 (https=)
CN (1) CN102618852B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10023955B2 (en) 2012-08-31 2018-07-17 Fei Company Seed layer laser-induced deposition
EP2787523B1 (en) 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
CN105200394A (zh) * 2014-06-24 2015-12-30 Fei公司 创建对称fib沉积的方法和系统
US20150369710A1 (en) * 2014-06-24 2015-12-24 Fei Company Method and System of Creating a Symmetrical FIB Deposition
US10538844B2 (en) 2015-09-11 2020-01-21 Fei Company Nanofabrication using a new class of electron beam induced surface processing techniques
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
WO2021030475A1 (en) 2019-08-12 2021-02-18 MEO Engineering Company, Inc. Method and apparatus for precursor gas injection

Citations (4)

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US4548864A (en) * 1982-10-29 1985-10-22 Tdk Corporation Magnetic recording medium having an organic metal underlayer
US4908226A (en) * 1988-05-23 1990-03-13 Hughes Aircraft Company Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams
US5827786A (en) * 1994-06-28 1998-10-27 Fei Company Charged particle deposition of electrically insulating films
US6492261B2 (en) * 2000-12-30 2002-12-10 Intel Corporation Focused ion beam metal deposition

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US4239788A (en) 1979-06-15 1980-12-16 Martin Marietta Corporation Method for the production of semiconductor devices using electron beam delineation
JPS61220417A (ja) * 1985-03-27 1986-09-30 Hitachi Ltd 半導体装置の製造方法
US5104684A (en) 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
US5594245A (en) 1990-10-12 1997-01-14 Hitachi, Ltd. Scanning electron microscope and method for dimension measuring by using the same
JP2962386B2 (ja) * 1993-03-10 1999-10-12 本荘ケミカル株式会社 透明導電性酸化スズ膜の製造方法
WO1997038355A1 (en) 1996-04-08 1997-10-16 Micrion Corporation Systems and methods for deposition of dielectric films
WO2000065611A1 (fr) * 1999-04-22 2000-11-02 Seiko Instruments Inc. Fabrication et dispositif de fabrication d'un film transparent conducteur; reparation d'une connexion filaire
US6399944B1 (en) 1999-07-09 2002-06-04 Fei Company Measurement of film thickness by inelastic electron scattering
US6200649B1 (en) 1999-07-21 2001-03-13 Southwest Research Institute Method of making titanium boronitride coatings using ion beam assisted deposition
US6638580B2 (en) * 2000-12-29 2003-10-28 Intel Corporation Apparatus and a method for forming an alloy layer over a substrate using an ion beam
US7504182B2 (en) 2002-09-18 2009-03-17 Fei Company Photolithography mask repair
US7674706B2 (en) 2004-04-13 2010-03-09 Fei Company System for modifying small structures using localized charge transfer mechanism to remove or deposit material
ATE532203T1 (de) 2004-08-27 2011-11-15 Fei Co Lokalisierte plasmabehandlung
US8835880B2 (en) 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
EP2109873B1 (en) * 2007-02-06 2017-04-05 FEI Company High pressure charged particle beam system
TWI479570B (zh) 2007-12-26 2015-04-01 奈華科技有限公司 從樣本移除材料之方法及系統
CN102149509B (zh) 2008-07-09 2014-08-20 Fei公司 用于激光加工的方法和设备
EP2151848A1 (en) 2008-08-07 2010-02-10 FEI Company Method of machining a work piece with a focused particle beam
US8778804B2 (en) 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
EP2226830B1 (en) 2009-03-06 2014-01-08 FEI Company Charged particle beam processing
US8524139B2 (en) 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
US8617668B2 (en) 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
JP5650234B2 (ja) 2009-11-16 2015-01-07 エフ・イ−・アイ・カンパニー ビーム処理システムに対するガス送達
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US4548864A (en) * 1982-10-29 1985-10-22 Tdk Corporation Magnetic recording medium having an organic metal underlayer
US4908226A (en) * 1988-05-23 1990-03-13 Hughes Aircraft Company Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams
US5827786A (en) * 1994-06-28 1998-10-27 Fei Company Charged particle deposition of electrically insulating films
US6492261B2 (en) * 2000-12-30 2002-12-10 Intel Corporation Focused ion beam metal deposition

Also Published As

Publication number Publication date
JP2012158833A (ja) 2012-08-23
EP2481829A2 (en) 2012-08-01
EP2481829A3 (en) 2012-09-12
US9334568B2 (en) 2016-05-10
US9090973B2 (en) 2015-07-28
US20120308740A1 (en) 2012-12-06
CN102618852A (zh) 2012-08-01
JP5930735B2 (ja) 2016-06-08
US20160010211A1 (en) 2016-01-14

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