CN102593278A - Light emitting device and method of forming the same - Google Patents
Light emitting device and method of forming the same Download PDFInfo
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- CN102593278A CN102593278A CN2011103023232A CN201110302323A CN102593278A CN 102593278 A CN102593278 A CN 102593278A CN 2011103023232 A CN2011103023232 A CN 2011103023232A CN 201110302323 A CN201110302323 A CN 201110302323A CN 102593278 A CN102593278 A CN 102593278A
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/86—Ceramics or glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1216—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by screen printing or stencil printing
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a light-emitting device and a forming method thereof, wherein the light-emitting device comprises: a base including a first surface; a conductive circuit layer formed on the first surface; and a light emitting diode module, which comprises a substrate and at least one light emitting diode arranged on the substrate, wherein the substrate of the light emitting diode module is arranged on the conductive circuit layer by a surface mounting method. In one embodiment, the base is preferably formed of a ceramic material, and a method of forming the light emitting device.
Description
Technical field
The invention relates to a kind of light-emitting device and forming method thereof, particularly about a kind of good light-emitting device and forming method thereof that dispels the heat.
Background technology
The general light-emitting device that uses light-emitting diode (LED) as light source because the life-span of LED and brightness all can reduce with the increase of temperature and LED has most electric energy can become heat energy, must have good cooling mechanism.Moreover; In the application of illumination, in order to reach high brightness, led module comprises the LED crystal grain of plural number usually and uses high-capacity LED crystal grain; Again because optic requirement; Each LED intercrystalline is closely arranged usually, so that simulation becomes single light source, the demand that so designs for heat radiation becomes higher.
Therefore; On light-emitting device, particularly on the lighting device, the substrate of being not only led module need have good thermal conductivity; And the pedestal (lamp socket) of installing led module also need have good heat-sinking capability (radiance is high); Each interelement interface (interface) also needs enough low thermal resistance (interface pore) in addition, to reduce the temperature (the p-n semiconductor interface temperature of LED) of LED node, so can make the elongated and brightness raising of life-span of LED.
In the design of led module, for example United States Patent (USP) the 7th, 489, and No. the 2005133808th, No. 076, Japanese publication 2006-261290 communique and U.S.'s publication etc. disclose the led module that uses ceramic substrate, to improve the heat radiation and the characteristics of luminescence.In addition, for example United States Patent (USP) the 7th, 759, and the LED packing of sandwich type ceramic substrate is used in No. 144 exposure, and the upper and lower surfaces of this sandwich type ceramic substrate has the copper layer of direct joint (direct bonding).By this, reach each interelement interface (junction) and all have good heat-conducting effect.
Yet, led module is installed in lamp socket, when constituting light-emitting device or lighting device; Lamp socket has three-dimensional contouring usually, in order to the position of led module to be installed, is difficult for using the manufacturing board of convention that led module is installed on the lamp socket; Usually need utilize manpower, use fixed components such as screw, pin fixed L ED module; In order to reduce the thermal resistance between led module and lamp socket, can use conducting strip and thermal grease etc. at its interface usually, no matter but be the thermal conductivity of conducting strip or thermal grease not high (～3W/m-K); Pedestal (lamp socket) under heat still can't effectively reach, the bottleneck of heat conduction still exists.Comprehensively above-mentioned, existing light-emitting device can't automation on producing and cost high, moreover the heat conduction between led module and lamp socket is not good.
Summary of the invention
In view of above-mentioned background of invention, in order to meet the requirement on the industry, one of the object of the invention is to provide a kind of good light-emitting device and forming method thereof that dispels the heat.According to the design of light-emitting device of the present invention, improved the interface thermal resistance of led module and pedestal, and the thermal emissivity rate of pedestal is high, the radiating effect of whole light-emitting device is high, LED junction temperature in the time of so can reducing operation, thereby can improve LED life-span and luminosity.
And one of the object of the invention is to provide a kind of light-emitting device, through using base of ceramic; Have high voltage withstanding characteristic, can bear the impact of the above voltage of 4000V, can not make whole failure of apparatus (for metal base; More meet the world security standard); That is leakage current is extremely low, is lower than the value that can detect, for example is lower than 1nA.
In addition; One of the object of the invention is to provide a kind of light-emitting device; Through automation screen painting or point gum machine print process; Handle the engaging of pedestal of led module and three-dimensional shape, remove and can reduce assembling flow path and reduce cost, and the interface thermal resistance of reduction led module and pedestal and improve the radiating efficiency of light-emitting device.
In order to achieve the above object, according to one embodiment of the invention a kind of method that forms light-emitting device is provided, comprises: a pedestal is provided, and it comprises a first surface, and has three-dimensional shape; Form a conducting wire layer on this first surface; And a light-emitting diode (LED) module is provided, wherein this light-emitting diode (LED) module comprises a substrate and is arranged at the LED crystal grain on the substrate; And the substrate of this light-emitting diode (LED) module is arranged on this conducting wire layer through surface mount (Surface mount) method, to form this light-emitting device.In an embodiment, this pedestal is more satisfactory by being made up of ceramic material.
In an embodiment; This forms the step of a conducting wire layer on this first surface; Comprise and use a metal thickener (Metal paste),, carry out sintering (Firing) and form this conducting wire layer with the screen painting method or after utilizing point gum machine to be printed in this first surface.In an embodiment, this metal thickener is that silver paste is more satisfactory.
In an embodiment, this surface mount method can be passed through scolder (Solder paste), reflow soldering (Reflow soldering) this substrate and this conducting wire layer.
In an embodiment, this conducting wire layer can have a Wiring pattern, and above-mentioned scolder is that tin cream is more satisfactory.
In an embodiment, comprise tin cream between the substrate of this light-emitting diode (LED) module and this conducting wire layer, the effective thermal conductivity of the interface of the interface of tin cream, tin cream and this substrate and tin cream and this conducting wire layer is more than or equal to more than the 50W/m-K.Above-mentioned " effective thermal conductivity " (keff) is defined as 1/keff=1/k
1+ 1/k
2+ 1/k
3, k wherein
2The pyroconductivity of expression tin cream, k
1The pyroconductivity of the interface (void) of expression tin cream and this conducting wire layer, k
3The pyroconductivity of the interface (void) of expression tin cream and this substrate.
In an embodiment, this screen painting method can be through a specific tool and this base of ceramic coupling (Coupling), so that be coated with this metal thickener on this first surface.
In an embodiment, between the substrate of this base of ceramic and this light-emitting diode (LED) module, can bear the impact of the above voltage of 4000V, can not make whole failure of apparatus, that is leakage current is extremely low, is lower than the value that can detect, for example is lower than 1nA.
According to another embodiment of the present invention a kind of light-emitting device is provided, comprises: a pedestal, it comprises a first surface; One conducting wire layer is formed on this first surface; And a light-emitting diode (LED) module, it comprises a substrate and is arranged at least one light-emitting diode on the substrate, and wherein the substrate of this light-emitting diode (LED) module is to be arranged on this conducting wire layer with surface mount (Surface mount) method.In an embodiment, this pedestal is made up of a material that is selected from following group: the aluminium of surface oxidation treatment, surface have aluminium, aluminium oxide and the aluminium nitride of oxide layer, and this pedestal is more satisfactory by being made up of ceramic material, and for example more satisfactory is aluminium oxide.
In an embodiment, comprise tin cream between the substrate of this light-emitting diode (LED) module and this conducting wire layer, the effective thermal conductivity of the interface of the interface of tin cream, tin cream and this substrate and tin cream and this conducting wire layer is more than or equal to more than the 50W/m-K.Above-mentioned " effective thermal conductivity " (keff) is defined as 1/keff=1/k
1+ 1/k
2+ 1/k
3, k wherein
2The pyroconductivity of expression tin cream, k
1The pyroconductivity of the interface (void) of expression tin cream and this conducting wire layer, k
3The pyroconductivity of the interface (void) of expression tin cream and this substrate.In an embodiment, above-mentioned conducting wire layer can be silver paste and constitutes and have a Wiring pattern.In an embodiment, between the substrate of this light-emitting diode (LED) module and this conducting wire layer, comprise scolding tin.In an embodiment, between the substrate of this base of ceramic and this light-emitting diode (LED) module, can bear the impact of the above voltage of 4000V, can not make whole failure of apparatus, that is leakage current is extremely low, is lower than the value that can detect, for example is lower than 1nA.
Therefore; Design according to light-emitting device of the present invention and forming method thereof; Can automation on producing and reduce cost, moreover improve the thermal conductivity between led module and lamp socket, and then improve the thermal diffusivity of whole light-emitting device; LED interface temperature when reducing operation, thereby can improve LED life-span and luminosity.In addition,, have high voltage withstanding characteristic, can not lose efficacy when bearing the above voltage of 4000V, that is leakage current is extremely low, is lower than the value that can detect, for example is lower than 1nA through using base of ceramic.
Description of drawings
Fig. 1 representes the sketch map of the light-emitting device of convention.
Fig. 2 representes the sketch map of light-emitting device according to an embodiment of the invention.
Fig. 3 representes to simulate the schematic top plan view of the structure of the light-emitting device that radiating effect uses.
Fig. 4 representes to form according to an embodiment of the invention the sketch map of the method for light-emitting device.
Fig. 5 representes the flow chart of the formation method of conducting wire layer 300 according to an embodiment of the invention, and wherein the generalized section of light-emitting device is represented on the right side of Fig. 5.
Fig. 6 (a) representes that pattern sketch map and Fig. 6 (b) of conducting wire layer represent the sketch map of light-emitting device according to an embodiment of the invention according to an embodiment of the invention.
Drawing reference numeral:
10: light-emitting device
The 20:LED module
30: pedestal
40: conducting strip
100: light-emitting device
200: pedestal
200a: first surface
300: the conducting wire layer
301: pedestal
302: seed metal layer (being the first metal layer)
303: copper layer (i.e. second metal level)
304: film
400: light-emitting diode (LED) module
410: substrate
450: light-emitting diode
500: substrate
501:LED crystal grain
520: pedestal
521: through hole
S10～S50, S310～S350: make flow process
Embodiment
About aforementioned and other technology contents, characteristics and effect of the present invention, in the following detailed description that cooperates with reference to a graphic preferred embodiment, can clearly appear.The direction term of being mentioned in following examples, for example: upper and lower, left and right, front or rear etc. only are the directions with reference to annexed drawings.Therefore, the direction term of use is to be used for explaining not to be to be used for limiting the present invention.In addition, the term of " A layer (or element) is arranged on the B layer (or element) " is not defined as the aspect that the A layer directly pastes contact B laminar surface, for example in the middle of A layer and the B layer still the interval other laminated also be this term institute covering scope.In the diagram, components identical is with identical symbolic representation.
Fig. 1 representes the light-emitting device 10 of convention, its comprise led module 20, pedestal 30 and be sandwiched in this led module and this pedestal between conducting strip 40.This led module 20 comprises a substrate and is arranged at the plural LED crystal grain on this substrate, and wherein this substrate can be aluminium base, copper base, metallic core circuit board (MCPCB; Metal core printed circuit board), aluminium oxide, aluminium nitride substrate, other ceramic substrates etc.LED crystal grain can be various LED crystal grain, perhaps high-capacity LED crystal grain.Pedestal 30 can be made up of for example materials such as pottery, aluminium oxide, aluminium nitride; The shape of this outer frame 30 is merely illustration among Fig. 1, can be configured as different shape according to demands of applications; Also can have various heat transmission fins, perhaps have different shape as the function of heat radiation.Conducting strip 40 for example is the thick siliceous macromolecular material of 0.5mm.But; So constitute, because 30 of led module 20 and 40 of conducting strips, conducting strip 40 and pedestals, interface exists many microvoids hole; Fill up these microvoid holes even use thermal grease; Heat-conducting effect is still not good, so that it is bad to dispel the heat, causes the temperature of led module to increase with the time of operating.On the other hand, when using metal materials to process as if pedestal 30, though coating glaze lacquer forms insulating barrier, owing to thin dielectric layer can't be resisted high pressure, thus can't pass through the 4000V Hi-pot test, promptly can't be under the impact of 4000V through safety test.
Therefore, because the problems referred to above, the present invention provides a kind of light-emitting device, has good cooling mechanism and can be through safety test.Fig. 2 representes light-emitting device 100 according to an embodiment of the invention, and it comprises: a pedestal 200, and it comprises a first surface 200a; One conducting wire layer 300 is formed on this first surface 200a; And a light-emitting diode (LED) module 400, it comprises a substrate 410 and is arranged at least one light-emitting diode 450 on the substrate, and wherein the substrate 410 of this light-emitting diode (LED) module is to be arranged on this conducting wire layer 300 with surface mount (Surface mount) method.In an embodiment, this pedestal is made up of a material that is selected from following group: the aluminium of surface oxidation treatment, surface have aluminium, aluminium oxide and the aluminium nitride of oxide layer, and this pedestal is more satisfactory by being made up of ceramic material; For example more satisfactory is aluminium oxide; Light-emitting device has high voltage withstanding characteristic, light-emitting device was lost efficacy, that is leakage current is extremely low; Be lower than the value that to detect, for example be lower than 1nA.
Aforementioned surfaces mounts (Surface mount) method, is meant the surface mounting technology (SMT that utilizes convention; Surface mount technology), can led module be fixed on this conducting wire layer.For example; Earlier metallic circuit is formed on the pedestal, can prints silver paste behind the first surface of this pedestal, carry out sintering through screen painting method or point gum machine; Then with steel plate (stainless steel stencil) coating tin cream; Pass through reflow soldering (reflow soldering) again, remove scaling powder, make the substrate bonded (bonding) of tin and led module.By this, need not to use the combination member of screw etc., can combine pedestal and led module.In addition, aforementioned manufacturing process can be through being provided with anchor point or utilizing tool, easily automation.
The formation method of this conducting wire layer 300 comprises and uses a metal thickener (metal paste), coat this first surface with the screen painting method after, carry out sintering (firing) and form this conducting wire layer.
In an embodiment, comprise tin cream between the substrate of this light-emitting diode (LED) module and this conducting wire layer, the effective thermal conductivity of the interface of the interface of tin cream, tin cream and this substrate and tin cream and this conducting wire layer is more than or equal to more than the 50W/m-K.Above-mentioned " effective thermal conductivity " (k
Eff), be defined as 1/k
Eff=1/k
1+ 1/k
2+ 1/k
3, k wherein
2The pyroconductivity of expression tin cream, k
1The pyroconductivity of the interface (void) of expression tin cream and this conducting wire layer, k
3The pyroconductivity of the interface (void) of expression tin cream and this substrate.Above-mentioned conducting wire layer can be silver paste and constitutes and have a Wiring pattern.In an embodiment, between the substrate of this light-emitting diode (LED) module and this conducting wire layer, can comprise scolding tin (or being called tin cream).
According to another embodiment of the present invention, disclose a kind of method that forms light-emitting device, shown in the flow chart of Fig. 4, comprising: a pedestal is provided, and it comprises a first surface, and has three-dimensional shape; Form a conducting wire layer on this first surface; And a light-emitting diode (LED) module is provided, wherein this light-emitting diode (LED) module comprises a substrate and is arranged at the LED crystal particle on the substrate; And the substrate of this light-emitting diode (LED) module is arranged on this conducting wire layer through surface mount (Surface mount) method, to form this light-emitting device.In an embodiment; This pedestal is made up of a material that is selected from following group: the aluminium of surface oxidation treatment, surface have aluminium, aluminium oxide and the aluminium nitride of oxide layer; This pedestal is more satisfactory by being made up of ceramic material; This ceramic material can for example be aluminium oxide or aluminium nitride, and more satisfactory is aluminium oxide.
Because the pedestal of light-emitting device has three-dimensional shape usually; Because general screen printer only is on the tabular object, to print; So the present invention is when the step of utilizing the screen painting method to be coated with; Need a special tool, and revise screen printer, could handle the pedestal of light-emitting device of the present invention.In another embodiment, the pattern that the present invention's point gum machine capable of using printshop needs.
In an embodiment; This forms the step of a conducting wire layer on this first surface; Comprise and use a metal thickener (metal paste),, carry out sintering (firing) and form this conducting wire layer with the screen painting method or after utilizing point gum machine to coat this first surface.This metal thickener for example can be the thickener of W, Mo-Mn, Cu, Ag, and silver paste is more satisfactory.The aforementioned surfaces method of mounting can be passed through scolder (solder paste), reflow soldering (reflow soldering) this substrate and this conducting wire layer.Aforementioned conducting wire layer can have a Wiring pattern, and above-mentioned scolder is that tin cream is more satisfactory.This Wiring pattern is the pattern shown in Fig. 6 (a) for example.
The above-mentioned method that for example forms light-emitting device, for example shown in the flow chart of Fig. 4, step S10 a: base of ceramic is provided; Step S20: use metal thickener, with the screen painting method or utilize point gum machine type metal thickener, form the for example pattern shown in Fig. 6 (a) in this first surface like silver paste; Step S30: sintering metal thickener and form this conducting wire layer; Step S40: use the for example scolder of tin cream, the substrate of reflow soldering led module and this conducting wire layer; Final step S50: obtain according to light-emitting device of the present invention.
In another embodiment, the formation method of this conducting wire layer 300 comprises: form a first metal layer; Form one second metal level; The film that formation one has pattern is on this second metal level; While this first metal layer of etching and this second metal level are with this first metal layer of patternization and this second metal level; Remove this residual film.Said method, sputtering method capable of using forms this first metal layer, and its sputtered target material is Ti or TiW, and galvanoplastic capable of using form this second metal level, and this second metal level is a bronze medal layer.In an embodiment; The film that formation one has pattern is in the method for this second metal level; Can form this film with pattern or dry film through print process,, can form the film that this has pattern through the mode of carrying out gold-tinted, little shadow, etching etc. behind the coating sensitization photoresistance in another embodiment.
For example; Fig. 5 representes the flow chart of the formation method of conducting wire layer 300 according to an embodiment of the invention; The method that wherein forms the film with pattern is to use dry film, forms the mode of pattern, representes the generalized section of light-emitting device in the right side of Fig. 5; Note that the generalized section of Fig. 5 only is used for clearly representing the formation of each layer, its size, thickness proportion do not according to the dimension scale of entity.Among Fig. 5,301 expression pedestals, 302 expression seed metal layer (being the first metal layer), 303 expression copper layers (i.e. second metal level), 304 expression films.Step S310: first sputter one the first metal layer, as seed metal layer, this seed metal layer can be titanium or titanium tungsten material becomes.Then, step S320: electroplate a bronze medal layer, form one second metal level.Step S330: the film that formation one has pattern is in this second metal level.Step S340: through etching with this first metal layer and this second metal level patternization.Step S350: remove residual film.At last, step S360.
Because the pedestal of light-emitting device has three-dimensional shape usually; Because general gold-tinted lithography process only is on the tabular object, to carry out exposure imaging; Yet pedestal of the present invention can't use the rotary coating machine, carries out the coating and the development of photoresistance, and exposure machine also is not suitable for the pedestal that so has three-dimensional shape usually in addition; So the present invention utilizes the method for printing film; Pattern is formed in base-plates surface,, and makes the conducting wire pattern be formed at the upper surface of pedestal again through pedestal being impregnated in the mode of etching liquid.
In an embodiment, comprise tin cream between the substrate of this light-emitting diode (LED) module and this conducting wire layer, the effective thermal conductivity of the interface of the interface of tin cream, tin cream and this substrate and tin cream and this conducting wire layer is more than or equal to more than the 50W/m-K.Above-mentioned " effective thermal conductivity " (k
Eff), be defined as 1/k
Eff=1/k
1+ 1/k
2+ 1/k
3, k wherein
2The pyroconductivity of expression tin cream, k
1The pyroconductivity of the interface (void) of expression tin cream and this conducting wire layer, k
3The pyroconductivity of the interface (void) of expression tin cream and this substrate.
In an embodiment, this screen painting method can be through a specific tool and this base of ceramic coupling (coupling), so that be coated with this metal thickener on this first surface.
In an embodiment, between the substrate of this base of ceramic and this light-emitting diode (LED) module, can not lose efficacy when bearing the above voltage of 4000V, that is leakage current is extremely low, is lower than the value that can detect, for example is lower than 1nA.
Fig. 3 representes to simulate the schematic top plan view of the structure of the light-emitting device that radiating effect uses; Wherein 500 the expression led modules substrate (being assumed to be aluminium base); 501 expression LED crystal grain (wide 1mm * long 1mm * thick 2mm), 520 expression pedestals, the through hole on the 521 expression pedestals.In analog computation, suppose that the heat flux (heat flux) of LED crystal grain is 1W/mm
2, the 9W that need dispel the heat altogether, the heat flux between the interface of each parts (component) is continuous.The pyroconductivity of aluminium base is 160W/m-K.Pedestal 520 can use base of ceramic, or aluminium base, wherein supposes base of ceramic (Al
2O
3) surface area be 2.037 * 10
-2m
2, volume is 3.605 * 10
-5m
3, its pyroconductivity is 24W/m-K, radiance is 0.9; The surface area of aluminium base (Al) is 2.037 * 10
-2m
2, volume is 3.605 * 10
-5m
3, its pyroconductivity is 160W/m-K, the radiance that is sprayed at the glaze on aluminium base surface is 0.5～0.7.In addition, the pyroconductivity of supposing conducting strip is 5W/m-K, and the pyroconductivity of scolding tin is 60W/m-K.Though on pedestal, have through hole 521 among Fig. 3, through hole 521 is not a necessary formation of the present invention, in another embodiment, can have through hole on the pedestal.
Analog result by radiating effect; When (1) between aluminium base and base of ceramic, using conducting strip; The LED junction temperature is 93.3 ℃, and (2) when using scolding tin between aluminium base and base of ceramic, and the LED junction temperature is reduced to 88.8 ℃; Showing with tradition uses the method for conducting strip to compare; The radiating effect of scolding tin used according to the invention is preferable, and this analog result do not consider the pore (voids) that conducting strip and pedestal, conducting strip and MCPCB substrate interface exist, so the actual radiating effect of scolding tin and conducting strip can be bigger than the gap as a result that simulation obtains.In the simulation of another 16W LED bulb, according to the present invention, the junction temperature of LED wafer (junction temperature) is only had an appointment 81 ℃, is equivalent to have the temperature of the 8W LED bulb of conventional construction approximately.In other words, according to the junction temperature of 16W LED bulb of the present invention, almost the junction temperature with the 8W LED bulb with conventional construction is identical.Just, according to design of the present invention, has preferable radiating effect.
In addition, relatively the asynchronous radiating effect of radiance when simulating with aluminium base, finds that the high person's radiating effect of radiance is preferable, though find that therefore the pyroconductivity of metallic aluminium is high, because of radiance is low, the radiating effect of the radiation of aluminium base is poor than base of ceramic.
According to light-emitting device of the present invention, pedestal can be ceramic material and becomes, and its shape is for example shown in Fig. 6 (b); Fig. 6 (a) expression is formed at this conducting wire layer above pedestal, and base bottom can have spiral joint, for example the standard connector of E26 or E27 etc. (screw-cap fittings); Therefore have conduction on the surface of pedestal tail end and use connector; Be electrically connected with led module, so that be connected to lamp socket, for example on the lamp socket of family expenses.
In sum; According to the design of light-emitting device of the present invention and forming method thereof, through reducing each interelement heat group, and can automation on producing and reduce cost; Improve the thermal conductivity between led module and lamp socket; And then improve the thermal diffusivity of whole light-emitting device, LED junction temperature when reducing operation, thereby can improve LED life-span and luminosity.In addition,, have high voltage withstanding characteristic, can not make the light-emitting device inefficacy when bearing the above voltage of 4000V, that is leakage current is extremely low, is lower than the value that can detect, for example is lower than 1nA through using base of ceramic.
Though more than with specific embodiment explanation the present invention, therefore do not limit scope of the present invention, only otherwise break away from main idea of the present invention, skilled personnel understand not breaking away under the intent of the present invention and the scope can carry out various distortion or change.Arbitrary embodiment of the present invention in addition or claim must not reached whole purposes or advantage or the characteristics that the present invention discloses.In addition, summary part and title only are the usefulness that is used for assisting the patent document search, are not to be used for limiting interest field of the present invention.
Claims (20)
1. a method that forms light-emitting device is characterized in that, described method comprises:
One pedestal is provided, and it comprises a first surface, and has three-dimensional shape;
Form a conducting wire layer on said first surface;
One light-emitting diode (LED) module is provided, and wherein said light-emitting diode (LED) module comprises a substrate and is arranged at the LED crystal particle on the substrate; And
The substrate of said light-emitting diode (LED) module is arranged on the layer of said conducting wire, to form said light-emitting device through the surface mount method.
2. the method for claim 1 is characterized in that, said pedestal is made up of a material that is selected from following group: the aluminium of surface oxidation treatment, surface have aluminium, aluminium oxide and the aluminium nitride of oxide layer.
3. the method for claim 1; It is characterized in that, form the step of a conducting wire layer on said first surface, comprise and use a metal thickener; With the screen painting method or after utilizing a point gum machine to be printed in said first surface, carry out sintering and form said conducting wire layer.
4. the method for claim 1 is characterized in that, the step of said formation conducting wire layer comprises:
Form a first metal layer;
Form one second metal level;
The film that formation one has pattern is on said second metal level;
While said the first metal layer of etching and said second metal level are with said the first metal layer of patternization and said second metal level;
Remove residual said film.
5. the method for claim 1 is characterized in that, said surface mount method is through scolder, the said substrate of reflow soldering and said conducting wire layer.
6. method as claimed in claim 3 is characterized in that, said conducting wire layer has a Wiring pattern.
7. method as claimed in claim 3 is characterized in that, said metal thickener is a silver paste.
8. method as claimed in claim 5 is characterized in that, said metal thickener is a silver paste, and said scolder is a tin cream.
9. the method for claim 1; It is characterized in that; Comprise tin cream between the substrate of said light-emitting diode (LED) module and the said conducting wire layer, the effective thermal conductivity of the interface of the interface of said tin cream, said tin cream and said substrate and said tin cream and said conducting wire layer is more than or equal to more than the 50W/m-K.
10. method as claimed in claim 3 is characterized in that, said screen painting method is through a specific tool and the coupling of said base of ceramic, so that be coated with said metal thickener on said first surface.
11. method as claimed in claim 2 is characterized in that, between the substrate of said base of ceramic and said light-emitting diode (LED) module, the leakage current of said light-emitting device is lower than 1nA when bearing the above voltage of 4000V.
12. method as claimed in claim 4 is characterized in that, utilizes the sputtering method of sputtered target material for Ti or TiW, and utilizes galvanoplastic, forms said second metal level, said second metal level is a bronze medal layer.
13. a light-emitting device is characterized in that, described light-emitting device comprises:
One pedestal, it comprises a first surface;
One conducting wire layer is formed on the said first surface; And
One light-emitting diode (LED) module, it comprises a substrate and is arranged at least one LED crystal particle on the substrate, and the substrate of wherein said light-emitting diode (LED) module is arranged on the layer of said conducting wire with the surface mount method.
14. light-emitting device as claimed in claim 13 is characterized in that, said pedestal is made up of a material that is selected from following group: the aluminium of surface oxidation treatment, surface have aluminium, aluminium oxide and the aluminium nitride of oxide layer.
15. light-emitting device as claimed in claim 13; It is characterized in that; Comprise tin cream between the substrate of said light-emitting diode (LED) module and the said conducting wire layer, the effective thermal conductivity of the interface of the interface of said tin cream, said tin cream and said substrate and said tin cream and said conducting wire layer is more than or equal to more than the 50W/m-K.
16. light-emitting device as claimed in claim 15 is characterized in that, said conducting wire layer is constituted by silver paste, has a Wiring pattern.
17. light-emitting device as claimed in claim 13 is characterized in that, between the substrate of said light-emitting diode (LED) module and the said conducting wire layer, comprises scolding tin.
18. light-emitting device as claimed in claim 13 is characterized in that, said conducting wire layer layer in regular turn closes seed metal layer, copper layer, changes the multi-ply construction that nickel-gold layer constituted, and has a Wiring pattern.
19. light-emitting device as claimed in claim 13 is characterized in that, the manufacture method of said conducting wire layer comprises:
Sputter one the first metal layer, as seed metal layer, wherein said seed metal layer is become by titanium or titanium tungsten material;
Electroplate a bronze medal layer, form one second metal level; And
Form one have pattern film in second metal level, make said the first metal layer and said second metal level simultaneously after the patternization through etching, remove residual said film.
20. light-emitting device as claimed in claim 13 is characterized in that, between the substrate of said base of ceramic and said light-emitting diode (LED) module, the leakage current of said light-emitting device is lower than 1nA when bearing the above voltage of 4000V.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100100572 | 2011-01-07 | ||
| TW100100572A TWI446601B (en) | 2011-01-07 | 2011-01-07 | Lighting device and method for forming the same |
| TW100102331 | 2011-01-21 | ||
| TW100102331A TWI362774B (en) | 2011-01-21 | 2011-01-21 | Lighting device and method for forming the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102593278A true CN102593278A (en) | 2012-07-18 |
Family
ID=44719387
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103023232A Pending CN102593278A (en) | 2011-01-07 | 2011-10-09 | Light emitting device and method of forming the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120175664A1 (en) |
| EP (1) | EP2475232A1 (en) |
| JP (1) | JP2012146952A (en) |
| KR (1) | KR101242218B1 (en) |
| CN (1) | CN102593278A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101428796B1 (en) * | 2012-08-01 | 2014-08-20 | 김정윤 | Indirect lighting device and its manufacturing method |
| CN106971993B (en) * | 2016-01-14 | 2021-10-15 | 三星电子株式会社 | Semiconductor package |
| KR102595276B1 (en) | 2016-01-14 | 2023-10-31 | 삼성전자주식회사 | Semiconductor packages |
| JP2019053941A (en) * | 2017-09-19 | 2019-04-04 | 株式会社小糸製作所 | Lamp fitting unit and vehicle lamp fitting |
| CN210381444U (en) * | 2019-06-05 | 2020-04-21 | 众普森科技（株洲）有限公司 | PCB and electrical equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090091020A1 (en) * | 2007-10-05 | 2009-04-09 | Delta Electronics, Inc. | Co-fired ceramic module |
| US20090296413A1 (en) * | 2008-05-26 | 2009-12-03 | Rohm Co., Ltd. | Lamp and method of making the same |
| WO2010143829A2 (en) * | 2009-06-08 | 2010-12-16 | Exax Inc. | A led array board |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1284536C (en) * | 1987-07-03 | 1991-05-28 | Akira Sasame | Member for semiconductor apparatus |
| US7482638B2 (en) | 2003-08-29 | 2009-01-27 | Philips Lumileds Lighting Company, Llc | Package for a semiconductor light emitting device |
| US20050133808A1 (en) | 2003-09-11 | 2005-06-23 | Kyocera Corporation | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
| US9070850B2 (en) * | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| JP2006261290A (en) | 2005-03-16 | 2006-09-28 | Sumitomo Metal Electronics Devices Inc | Package for containing light emitting element and its manufacturing process |
| JP4926481B2 (en) | 2006-01-26 | 2012-05-09 | 共立エレックス株式会社 | Light emitting diode package and light emitting diode |
| KR100851183B1 (en) * | 2006-12-27 | 2008-08-08 | 엘지이노텍 주식회사 | Semiconductor light emitting device package |
| JP2009099881A (en) * | 2007-10-19 | 2009-05-07 | Sanyo Electric Co Ltd | Light-emitting device, and light-emitting module and backlight device using the device |
| WO2009066670A1 (en) * | 2007-11-20 | 2009-05-28 | Nanoteco Corporation | White led device and method for manufacturing the same |
| KR100917841B1 (en) | 2008-07-25 | 2009-09-18 | 코아셈(주) | Metal substrate for electronic components module and electronic components module using it and method of manufacturing metal substrate for electronic components module |
| WO2010050067A1 (en) | 2008-10-31 | 2010-05-06 | 電気化学工業株式会社 | Substrate for light emitting element package, and light emitting element package |
| JP5359734B2 (en) * | 2008-11-20 | 2013-12-04 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
| JP2010245258A (en) * | 2009-04-06 | 2010-10-28 | Toshiba Lighting & Technology Corp | Wiring board and light emitting device |
| DE102009021236A1 (en) * | 2009-05-14 | 2010-12-02 | Osram Gesellschaft mit beschränkter Haftung | Light-emitting diode module and lighting unit with light-emitting diode module |
| KR20100007822A (en) * | 2009-11-23 | 2010-01-22 | 오주용 | Flexible pcb for led module |
-
2011
- 2011-09-08 KR KR1020110091138A patent/KR101242218B1/en not_active IP Right Cessation
- 2011-09-09 US US13/229,127 patent/US20120175664A1/en not_active Abandoned
- 2011-09-15 EP EP11181518A patent/EP2475232A1/en not_active Withdrawn
- 2011-10-09 CN CN2011103023232A patent/CN102593278A/en active Pending
- 2011-10-17 JP JP2011228179A patent/JP2012146952A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090091020A1 (en) * | 2007-10-05 | 2009-04-09 | Delta Electronics, Inc. | Co-fired ceramic module |
| US20090296413A1 (en) * | 2008-05-26 | 2009-12-03 | Rohm Co., Ltd. | Lamp and method of making the same |
| WO2010143829A2 (en) * | 2009-06-08 | 2010-12-16 | Exax Inc. | A led array board |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120175664A1 (en) | 2012-07-12 |
| KR101242218B1 (en) | 2013-03-11 |
| JP2012146952A (en) | 2012-08-02 |
| KR20120080516A (en) | 2012-07-17 |
| EP2475232A1 (en) | 2012-07-11 |
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