CN102592988B - 提高打开多晶栅顶化学机械平坦化工艺均匀性的方法 - Google Patents
提高打开多晶栅顶化学机械平坦化工艺均匀性的方法 Download PDFInfo
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- CN102592988B CN102592988B CN201110005057.7A CN201110005057A CN102592988B CN 102592988 B CN102592988 B CN 102592988B CN 201110005057 A CN201110005057 A CN 201110005057A CN 102592988 B CN102592988 B CN 102592988B
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- mechanical planarization
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- polysilicon gate
- inclination angle
- silicon oxide
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- 238000000034 method Methods 0.000 title claims abstract description 84
- 150000004767 nitrides Chemical class 0.000 title abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 238000005468 ion implantation Methods 0.000 claims abstract description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 40
- 238000005498 polishing Methods 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 49
- 229920005591 polysilicon Polymers 0.000 claims description 49
- 239000000377 silicon dioxide Substances 0.000 claims description 25
- 238000002513 implantation Methods 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 2
- -1 this Chemical compound 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
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Claims (10)
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CN201110005057.7A CN102592988B (zh) | 2011-01-11 | 2011-01-11 | 提高打开多晶栅顶化学机械平坦化工艺均匀性的方法 |
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CN201110005057.7A CN102592988B (zh) | 2011-01-11 | 2011-01-11 | 提高打开多晶栅顶化学机械平坦化工艺均匀性的方法 |
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CN102592988A CN102592988A (zh) | 2012-07-18 |
CN102592988B true CN102592988B (zh) | 2014-08-20 |
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CN201110005057.7A Active CN102592988B (zh) | 2011-01-11 | 2011-01-11 | 提高打开多晶栅顶化学机械平坦化工艺均匀性的方法 |
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CN (1) | CN102592988B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105261550B (zh) * | 2014-07-18 | 2018-04-03 | 中国科学院微电子研究所 | 一种锗的化学机械抛光方法 |
CN111554574B (zh) * | 2020-05-19 | 2023-03-21 | 中国科学院微电子研究所 | 一种平坦化方法、半导体器件及其制作方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11340174A (ja) * | 1998-05-28 | 1999-12-10 | Nippon Steel Corp | 半導体装置の製造方法 |
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2011
- 2011-01-11 CN CN201110005057.7A patent/CN102592988B/zh active Active
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JP特开平11-340174A 1999.12.10 |
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CN102592988A (zh) | 2012-07-18 |
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Address after: 100020 West eight rooms, dongzhimenwai, Chaoyang District, Beijing Patentee after: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. Address before: 100015 Beijing city Chaoyang District Dongzhimen West eight room Wanhong No. 2 West Street Patentee before: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. |
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